CN113707769B - High-precision patterned LED leakage current blocking layer based on transfer printing insulating Langmuir monolayer and preparation method thereof - Google Patents
High-precision patterned LED leakage current blocking layer based on transfer printing insulating Langmuir monolayer and preparation method thereof Download PDFInfo
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- CN113707769B CN113707769B CN202110973110.6A CN202110973110A CN113707769B CN 113707769 B CN113707769 B CN 113707769B CN 202110973110 A CN202110973110 A CN 202110973110A CN 113707769 B CN113707769 B CN 113707769B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
- H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/18—Carrier blocking layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
Abstract
The invention provides a high-precision patterned LED leakage current blocking layer based on a transfer printing insulation Langmuir monolayer and a preparation method thereof. The leakage current blocking layer is obtained by utilizing Langmuir monolayer preparation technology, and the insulation material system has the advantages of small limitation and wide selectable range. The leakage current blocking layer obtained by utilizing the Langmuir monolayer preparation technology and the transfer printing technology avoids solvent pollution in the developing and etching process of a photoetching process, and can reduce or even eliminate leakage current in a device, reduce energy loss, realize high-efficiency luminescence, and realize a high-resolution full-color LED lattice by matching with RGB monochromatic luminescent materials or white luminescent materials.
Description
Technical Field
The invention belongs to the technical field of high-resolution LED preparation, and particularly relates to a high-precision patterned LED leakage current blocking layer based on a transfer printing insulating Langmuir monolayer and a preparation method thereof.
Background
In daily life, more than 80% of external information received by human beings is obtained through vision. The display technology is closely related to vision, and the importance of the technology is self-evident. With the development of science and technology, people are no longer satisfied with the traditional display devices, and the directions of flexible display, wearable devices, virtual/augmented reality (AR/VR) technology and the like are attracting attention.
Near-to-eye display devices, as an integral part of AR/VR technology, have a direct impact on the user's visual experience in terms of response speed, contrast, color gamut, resolution, etc. Compared with the traditional display equipment, the near-eye display equipment has extremely short distance between the pixel points and human eyes, the pixel density of the traditional high-definition display equipment is used for such short viewing distance, the adjacent pixels and the human eyes can form a large included angle, the boundary sense of the pixels is strong, a screen window effect is generated, and the dizziness sense of a user is easily caused while the reproduction reality of a picture is influenced. Therefore, for the development of intelligent display, development of ultra-high resolution display technology is of great importance.
In the development direction of high-resolution display, LEDs are distinguished from the display technologies such as CRT, PDP, FED, LCD by their unique advantages of active light emission, thinness, light weight, wide color gamut, high efficiency, fast response, and the like. However, if holes are often formed in the light-emitting layer of the thin film LED device during deposition, a leakage current is generated inside the device when the device is turned on, so that part of the electric energy is lost in a thermal form, thereby reducing the light-emitting efficiency of the device. Therefore, reducing the generation of leakage current is a key to improving the luminous efficiency of LEDs.
Disclosure of Invention
In view of the above, in order to overcome the defects and shortcomings of the prior art, the present invention aims to provide a high-precision patterned LED leakage current blocking layer based on a transfer printing insulating langmuir monolayer and a preparation method thereof, which are mainly applied to the preparation of a light emitting device with high luminous efficiency and ultra-high resolution in LEDs.
The LED leakage current blocking layer provided by the invention realizes high-precision patterning and leakage current elimination mainly through transferring and printing an insulating Langmuir monolayer, and has a certain significance in developing an ultrahigh-resolution LED with high luminous efficiency. The Langmuir single layer insulated by transfer printing realizes high-precision patterning and leakage current elimination, the patterning is customizable, and the preparation of the high-luminous-efficiency ultrahigh-resolution luminescent device can be realized when the device is applied to an LED.
The preparation technology of Langmuir single-layer preparation technology and transfer printing technology are utilized to introduce the high-precision patterned insulating layer into the LED, so that the size of a light-emitting unit is reduced, leakage current is eliminated, and the preparation of the high-luminous-efficiency ultrahigh-resolution light-emitting device can be realized. The leakage current blocking layer is obtained by utilizing Langmuir monolayer preparation technology, and the insulation material system has the advantages of small limitation and wide selectable range. The leakage current blocking layer obtained by utilizing the Langmuir monolayer preparation technology and the transfer printing technology avoids solvent pollution in the developing and etching process of a photoetching process, and can reduce or even eliminate leakage current in a device, reduce energy loss, realize high-efficiency luminescence, and realize a high-resolution full-color LED lattice by matching with RGB monochromatic luminescent materials or white luminescent materials.
The invention adopts the following technical scheme:
a preparation method of a high-precision patterned LED leakage current blocking layer based on transfer printing of an insulating Langmuir monolayer is characterized by comprising the following steps of: the patterned insulating layer is introduced by utilizing Langmuir monolayer preparation technology and transfer printing technology to form a leakage current blocking layer, so that patterning and leakage current elimination are realized.
The Langmuir monolayer preparation technology is used for enabling the insulating material to form a compact and orderly arranged insulating monolayer;
according to the transfer printing technology, the seal is adopted to grasp and release the insulating single layer, so that the insulating single layer can be transferred from the subphase liquid level to the target substrate.
Wherein the pattern of the stamp can be customized according to specific requirements.
Further, the Langmuir monolayer preparation technology specifically comprises the following steps:
step A1: dispersing an insulating material at the interface between the subphase solution and the atmosphere;
step A2: the area of the subphase liquid level is compressed by the sliding barrier, so that the insulating material forms a compact single layer which is orderly arranged.
Further, the transfer printing technology specifically comprises the following steps:
step B1: selectively grabbing the compact insulating single layer by using a patterned seal;
step B2: transferring the stamp and the grasped insulating single layer onto a target substrate;
step B3: and stripping the seal from the insulating monolayer to complete the transfer printing process.
The two techniques can be simplified into the following steps:
step 1: dispersing an insulating material at the interface between the subphase solution and the atmosphere;
step 2: the area of the subphase liquid level is reduced, so that the insulating material forms a single layer which is tightly arranged;
step 3: selectively grabbing the insulating single layer formed in the step 2 by using a high-precision patterned stamp;
step 4: and releasing the insulating monolayer on the stamp to the target substrate to finish transfer.
Further, the adhesion between the patterned stamp and the material of the insulating monolayer is greater than the adhesion between the target substrate and the material of the insulating monolayer.
And a high-precision patterned LED, which is characterized in that the high-precision patterned LED is manufactured by adopting the preparation method of the high-precision patterned LED leakage current blocking layer based on the transfer printing insulating Langmuir monolayer, and each functional layer is sequentially as follows: an anode, a hole injection layer, a hole transport layer, a high precision patterned light emitting layer, an electron transport layer, and a cathode, wherein the high precision patterned light emitting layer is formed by filling a patterned insulating monolayer with an electroluminescent material.
Further, the anode is made of metal oxide material, is transparent in a visible light wave band, and has a sheet resistance value smaller than 300 omega; the thickness is 100-200 nm; the hole injection layer is made of one of PEDOT PSS, molybdenum oxide, nickel oxide and cuprous thiocyanate.
Further, the valence band energy level structure of the hole transport layer is matched with the hole injection layer and the high-precision patterned luminescent layer; the conduction band energy level structure of the electron transport layer is matched with the cathode and the high-precision patterned luminescent layer.
Further, the energy level structure of the electroluminescent material is matched with the hole transport layer and the electron transport layer.
Further, the electroluminescent material is one of inorganic luminescent material and organic luminescent material, or a mixture of a plurality of inorganic luminescent materials and organic luminescent materials; the insulating material is an insulating organic material or an insulating inorganic material. Wherein, the inorganic luminescent material can be perovskite, perovskite quantum dots, indium phosphide quantum dots and cadmium quantum dots.
Further, the preparation method comprises the following steps:
step S1: depositing an anode of the LED on the substrate; step S2: depositing a hole injection layer on an anode of the LED; step S3: depositing a hole transport layer over the hole injection layer of the LED;
step S4: transferring and printing an insulating monolayer based on Langmuir monolayer preparation technology onto a hole transport layer of an LED by using a high-precision patterned seal; step S5: filling the patterned insulating single layer with an electroluminescent material to form a high-precision patterned luminescent layer of the LED; step S6: depositing an electron transport layer on the high-precision patterned light emitting layer of the LED; step S7: a metal cathode is deposited over the electron transport layer of the LED.
Advantages of the invention and its preferred embodiments compared to the prior art include:
1) The leakage current blocking layer is obtained by utilizing Langmuir monolayer preparation technology, and the insulation material system has the advantages of small limitation and wide selectable range.
2) The leakage current blocking layer is obtained by utilizing Langmuir monolayer preparation technology and transfer printing technology, and compared with the common photoetching technology for high-precision patterning, the leakage current blocking layer avoids solvent pollution in the developing and etching process.
3) The leakage current blocking layer is applied to an LED, can reduce or even eliminate leakage current in the device, reduces energy loss, and realizes high-efficiency light emission.
4) The high-precision patterning of the invention can be matched with RGB monochromatic luminescent materials or white luminescent materials to realize high-resolution full-color LED dot matrix.
Drawings
The invention is described in further detail below with reference to the attached drawings and detailed description:
fig. 1 is a schematic diagram of a langmuir monolayer preparation technique and a transfer printing technique according to an embodiment of the present invention;
fig. 2 is a schematic diagram of a high-precision patterned LED structure based on a transfer printing insulating langmuir monolayer according to an embodiment of the present invention.
In the figure, 101 is a stamp used in transfer printing technology;
102 is a sliding barrier for controlling subphase liquid level area in langmuir monolayer preparation technology;
103 is a subphase solution used in langmuir monolayer preparation technique:
104 is an insulating material used to prepare the leakage current blocking layer;
105 is a target substrate used in transfer printing technology;
201 is a metal cathode of a patterned LED;
202 is an electron transport layer of a patterned LED;
203 is a patterned insulating layer prepared by langmuir monolayer preparation technology and transfer printing technology in the patterned LED;
204 are light emitting cells in the patterned LED;
205 is a hole transport layer of the patterned LED;
206 is a hole injection layer of the patterned LED;
207 is the anode of the patterned LED;
208 is a substrate for patterning LEDs;
209 is the dc drive power for the patterned LED.
Detailed Description
In order to make the features and advantages of the present patent more comprehensible, embodiments accompanied with figures are described in detail below:
example 1
The preparation process of the high-precision patterned LED leakage current blocking layer based on the transfer printing insulating langmuir monolayer provided in this embodiment is shown in fig. 1, and is performed according to the following steps:
s11: dispersing an insulating material at an interface between the subphase solution 103 and the atmosphere;
s12: compressing the area of the subphase liquid level by utilizing the sliding barrier 102 to enable the insulating material 104 to form a compact single layer which is orderly arranged;
s13: selectively grabbing the compact insulating single layer formed in the step S12 by using the high-precision patterned stamp 101;
s14: transferring the stamp onto the target substrate 105 together with the grasped insulating monolayer;
s15: and stripping the seal from the insulating monolayer to complete the transfer printing process.
Example 2
The structure of the high-precision patterned LED based on the transfer printing insulating langmuir monolayer provided in this embodiment is shown in fig. 2, and the preparation process is performed according to the following steps:
s21: depositing an anode 207 of the LED on a substrate 208;
s22: depositing a hole injection layer 206 on the anode of the LED;
s23: depositing a hole transport layer 205 over the hole injection layer of the LED;
s24: transferring and printing an insulating monolayer based on Langmuir monolayer preparation technology onto a hole transport layer of an LED by using a high-precision patterned seal;
s25: filling the patterned insulating monolayer 203 with an electroluminescent material to form a high-precision patterned light emitting layer 204 of the LED;
s26: depositing an electron transport layer 202 over the high precision patterned light emitting layer of the LED;
s27: a metal cathode 201 is deposited over the electron transport layer of the LED.
And then a direct current driving power supply 209 of the LED can be connected between the cathode and the anode so as to completely realize the working function of the LED.
The present patent is not limited to the above-mentioned preferred embodiments, and any person can obtain other various types of high-precision patterned LED leakage current blocking layers based on transfer printing insulating langmuir monolayers and methods for preparing the same under the teachings of the present patent, and all equivalent changes and modifications made according to the scope of the present patent should be covered by the present patent.
Claims (7)
1. A preparation method of a high-precision patterned LED leakage current blocking layer based on transfer printing of an insulating Langmuir monolayer is characterized by comprising the following steps of: patterning and leakage current elimination are realized by introducing a patterned insulating layer by utilizing Langmuir single-layer preparation technology and transfer printing technology to form a leakage current blocking layer;
the Langmuir monolayer preparation technology is used for enabling the insulating material to form a compact and orderly arranged insulating monolayer;
the transfer printing technology adopts a seal to grasp and release the insulating single layer, so that the insulating single layer can be transferred from the subphase liquid level to the target substrate;
the Langmuir monolayer preparation technology specifically comprises the following steps:
step A1: dispersing an insulating material at the interface between the subphase solution and the atmosphere;
step A2: compressing the area of the subphase liquid level by utilizing the sliding barrier to enable the insulating material to form a compact single layer which is orderly arranged;
the transfer printing technology specifically comprises the following steps:
step B1: selectively grabbing the compact insulating single layer by using a patterned seal;
step B2: transferring the stamp and the grasped insulating single layer onto a target substrate;
step B3: stripping the seal from the insulating monolayer to finish the transfer printing process;
the adhesion between the patterned stamp and the material of the insulating monolayer is greater than the adhesion between the target substrate and the material of the insulating monolayer.
2. The high-precision patterned LED is characterized in that each functional layer is sequentially as follows: an anode, a hole injection layer, a hole transport layer, a high precision patterned light emitting layer, an electron transport layer, and a cathode, wherein the high precision patterned light emitting layer is formed by filling a patterned insulating monolayer with an electroluminescent material, and the patterned insulating monolayer is manufactured using the method for manufacturing a high precision patterned LED leakage current blocking layer based on a transfer printing insulating langmuir monolayer according to claim 1.
3. The high precision patterned LED of claim 2, wherein: the anode is made of metal oxide material, transparent in a visible light wave band and has a sheet resistance value smaller than 300 omega; the thickness is 100-200 nm; the hole injection layer is made of one of PEDOT PSS, molybdenum oxide, nickel oxide and cuprous thiocyanate.
4. The high precision patterned LED of claim 2, wherein: the valence band energy level structure of the hole transport layer is matched with the hole injection layer and the high-precision patterned luminescent layer; the conduction band energy level structure of the electron transport layer is matched with the cathode and the high-precision patterned luminescent layer.
5. The high precision patterned LED of claim 2, wherein: the energy level structure of the electroluminescent material is matched with the hole transport layer and the electron transport layer.
6. The high precision patterned LED of claim 2, wherein: the electroluminescent material is one of inorganic luminescent material and organic luminescent material or the mixture of a plurality of inorganic luminescent materials and organic luminescent materials; the insulating material is an insulating organic material or an insulating inorganic material.
7. The high precision patterned LED of claim 6, wherein the method of making comprises the steps of:
step S1: depositing an anode of the LED on the substrate; step S2: depositing a hole injection layer on an anode of the LED; step S3: depositing a hole transport layer over the hole injection layer of the LED; step S4: transferring and printing an insulating monolayer based on Langmuir monolayer preparation technology onto a hole transport layer of an LED by using a high-precision patterned seal; step S5: filling the patterned insulating single layer with an electroluminescent material to form a high-precision patterned luminescent layer of the LED; step S6: depositing an electron transport layer on the high-precision patterned light emitting layer of the LED; step S7: a metal cathode is deposited over the electron transport layer of the LED.
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