CN113707211A - Method and device for error correction of flash Read Retry - Google Patents
Method and device for error correction of flash Read Retry Download PDFInfo
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/38—Response verification devices
- G11C29/42—Response verification devices using error correcting codes [ECC] or parity check
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/12—Built-in arrangements for testing, e.g. built-in self testing [BIST] or interconnection details
- G11C29/44—Indication or identification of errors, e.g. for repair
Abstract
The embodiment of the invention provides a method and a device for correcting errors of a flash Read Retry, which are applied to the technical field of electronics. The method and the device realize the successful Retry of the Table value through the history data record, preferentially select the Table value which can Read back the data to perform Retry when the Retry occurs, and thus improve the efficiency of Read Retry.
Description
Technical Field
The present invention relates to the field of electronic technologies, and in particular, to a method and an apparatus for error correction of a flash memory Read Retry.
Background
Due to environmental factors, the number of times of reading and writing and the storage time, electrons can be accelerated to pass through the insulating layer and return to the channel, so that the electrons of the floating gate are reduced. When the Read operation is performed at this time, ECC error correction failure often occurs. A Read Retry is required for ECC error correction failures. The efficiency of Read Retry is directly reflected in the performance of the whole product.
Currently, in a mainstream operation system, Read Retry is mainly performed by using a Retry Table sequence provided by a nand or nor medium original factory. The original factory provided Retry Table sequence is already the best Read Retry with a certain factor of the current medium. But there are various factors by which Read Retry occurs, say: environmental factors, the number of times of erasing and storage time. This may result in a different threshold being required. And ECC checks fail due to different factors, the thresholds required for it are often different. The larger Retry Table may waste time selecting retries one by one in order.
Disclosure of Invention
The embodiment of the invention provides a method and a device for correcting errors of a flash Read Retry, which aim to solve the problem that in the current mainstream operating system, the Read Retry is mainly performed by using the Retry Table provided by a nand or nor medium original factory, and the required thresholds are often different because ECC (error correction code) check fails due to different factors. The problem that selecting Retry one by one in order with a larger Retry Table wastes time includes:
a method of flash Read Retry error correction, the method comprising:
judging whether the current state of the flash memory block is subjected to Read Retry or not;
when the current state of the flash Block is subjected to Retry, performing Read Retry operation according to a prestored corresponding Retry Table sequence of the last current state of the Block;
and when the current state of the flash block does not have Retry, performing Read Retry according to a prestored default Retry Table sequence.
Optionally, a Retry Table0 sequence, a Retry Table1 sequence, and a Retry Table2 sequence are stored in advance, a state corresponding to the Retry Table0 sequence is that Read times and P/E values are high, a state corresponding to the Retry Table1 sequence is that the temperature is high when writing and reading, and a state corresponding to the Retry Table2 sequence is that the storage time is long.
Optionally, when a Retry occurs in the current state of the flash Block, performing a Read Retry operation according to a prestored corresponding Retry Table sequence of the current state of the Block last time, where the Retry operation includes:
and modifying the threshold of the medium judgment data of 0 or 1 according to the corresponding Retry Table sequence of the current state, and performing Read Retry operation.
Optionally, after modifying the threshold of the medium judgment data being "0" or "1" according to the corresponding Retry Table sequence of the current state and performing the Read Retry operation, the method further includes:
judging whether the Read Retry operation is successful;
and when the Read Retry operation is successful, taking the threshold value as the initial value of the Read Retry, and exiting the Read Retry process.
An apparatus for flash Read Retry error correction, the apparatus comprising:
the state generation judging module is used for judging whether the current state of the flash memory block passes Read Retry or not;
the corresponding sequence operation module is used for performing Read Retry operation according to a prestored corresponding Retry Table sequence of the last current state of the Block when Retry occurs in the current state of the flash Block;
and the default sequence operation module is used for performing Read Retry according to a prestored default Retry Table sequence when Retry does not occur in the current state of the flash block.
Optionally, a Retry Table0 sequence, a Retry Table1 sequence, and a Retry Table2 sequence are stored in advance, a state corresponding to the Retry Table0 sequence is that Read times and P/E values are high, a state corresponding to the Retry Table1 sequence is that the temperature is high when writing and reading, and a state corresponding to the Retry Table2 sequence is that the storage time is long.
Optionally, the corresponding sequential operation module includes:
and the threshold modifying submodule is used for modifying the threshold of the medium judgment data of 0 or 1 according to the corresponding Retry Table sequence of the current state and performing Read Retry operation.
Optionally, the apparatus further comprises:
the success judging module is used for judging whether the Read Retry operation is successful or not;
and the process exit module is used for taking the threshold value as the initial value of the Read Retry and exiting the Read Retry process when the Read Retry operation is successful.
An apparatus comprising at least one processor and a memory communicatively coupled to the at least one processor; the memory stores instructions executable by the at least one processor to enable the at least one processor to perform the method of flash Read Retry error correction as described above.
A computer-readable storage medium having stored thereon computer-executable instructions for causing a computer to perform a method of flash Read Retry error correction as described above.
The invention has the following advantages:
in the invention, by judging whether the current state of a flash Block has a Read Retry or not, when the current state of the flash Block has the Retry, the Read Retry operation is carried out according to the prestored corresponding Retry Table sequence of the last current state of the Block, and when the current state of the flash Block has no Retry, the Read Retry is carried out according to the prestored default Retry Table sequence. The method and the device realize the successful Retry of the Table value through the history data record, preferentially select the Table value which can Read back the data to perform Retry when the Retry occurs, and thus improve the efficiency of Read Retry.
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In order to more clearly illustrate the technical solution of the present invention, the drawings needed to be used in the description of the present invention will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without inventive exercise.
FIG. 1 is a flow chart illustrating steps of a flash Read Retry error correction method according to the present invention;
FIG. 2 is a schematic diagram illustrating a flash Read Retry error correction apparatus according to the present invention.
Detailed Description
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in further detail below. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, a flow chart showing steps of a method for error correction of a flash memory Read Retry according to the present invention is shown, wherein the method comprises the following steps:
102, when a Retry occurs in the current state of the flash Block, performing a Read Retry operation according to a prestored corresponding Retry Table sequence of the previous current state of the Block;
recording the Retry Table on a bidirectional Table _ List, and performing Read Retry according to different Retry Table sequences is the difference of the position of the initial reference value of selection on the Table _ List.
In an embodiment of the present application, a Retry Table0 sequence, a Retry Table1 sequence, and a Retry Table2 sequence are stored in advance, a state corresponding to the Retry Table0 sequence is that Read times and P/E values are high, a state corresponding to the Retry Table1 sequence is that temperature is high when writing and reading, and a state corresponding to the Retry Table2 sequence is that storage time is long.
The modified Retry Table sequence is the starting position of the modified Table0, Table1 and Table2 on the Table _ List. Under the application scene of ECC error correction failure, the current state and the historical state of the medium are effectively utilized to select the Retry Table sequence, and the Read Retey task is efficiently completed.
When the Program is executed on the medium, the state is recorded, such as the P/E value, the environmental temperature, the writing time (the Block which records all the written data through the linked list, the earlier the writing sequence gets, the earlier), and the like. And recording the Program state of the Block by adding linked List Blocks _ List information. The temperature information is the value of the read master register; the writing time is embodied in a Blocks _ List sequence mode, and the earlier the writing time is, the earlier the writing time is; the P/E values are the number of programs and erases.
When Read Retry is required, the Retry Table sequence can be modified by referring to the state of Block. After entering the Read Retry flow, firstly, whether the Block has Read Retry in the current state is judged. If not, performing Read Retry according to a default sequence, and recording and updating the optimal Retry Table sequence of the current state after success; and if so, performing Read Retry operation according to the optimal Retry Table sequence of the last current state of the Block. Such as: if the information is acquired
In a specific implementation, step 102 includes:
and modifying the threshold of the medium judgment data of 0 or 1 according to the corresponding Retry Table sequence of the current state, and performing Read Retry operation.
And after the Read Retry is successful, taking the currently used Table value as the initial value of the Table.
And 103, when the Retry does not occur in the current state of the flash block, performing Read Retry according to a prestored default Retry Table sequence.
In an embodiment of the present application, after modifying the threshold of the medium determination data to be "0" or "1" according to the corresponding Retry Table sequence of the current state and performing the Read Retry operation, the method further includes:
judging whether the Read Retry operation is successful;
and when the Read Retry operation is successful, taking the threshold value as the initial value of the Read Retry, and exiting the Read Retry process.
In summary, by determining whether the current state of the flash Block has a Read Retry or not, when the current state of the flash Block has a Retry, performing a Read Retry operation according to a prestored corresponding Retry Table sequence of the previous current state of the Block, and when the current state of the flash Block has no Retry, performing a Read Retry according to a prestored default Retry Table sequence. The method and the device realize the successful Retry of the Table value through the history data record, preferentially select the Table value which can Read back the data to perform Retry when the Retry occurs, and thus improve the efficiency of Read Retry.
It should be noted that, for simplicity of description, the method embodiments are described as a series of acts or combination of acts, but those skilled in the art will recognize that the embodiments are not limited by the order of acts described, as some steps may occur in other orders or concurrently depending on the embodiments. Further, those skilled in the art will also appreciate that the embodiments described in the specification are presently preferred and that no particular act is required of the embodiments of the application.
Referring to fig. 2, a schematic structural diagram of an apparatus for flash Read Retry error correction according to an embodiment of the present application is shown, where the apparatus includes the following structures:
a state occurrence judging module 201, configured to judge whether a Read Retry occurs in a current state of the flash block;
a corresponding sequence operation module 202, configured to, when a Retry occurs in the current state of the flash Block, perform a Read Retry operation according to a prestored corresponding Retry Table sequence of the current state of the Block at the previous time;
and a default sequence operation module 203, configured to perform Read Retry according to a pre-stored default Retry Table sequence when Retry does not occur in the current state of the flash block.
In an embodiment of the present application, a Retry Table0 sequence, a Retry Table1 sequence, and a Retry Table2 sequence are stored in advance, a state corresponding to the Retry Table0 sequence is that Read times and P/E values are high, a state corresponding to the Retry Table1 sequence is that temperature is high when writing and reading, and a state corresponding to the Retry Table2 sequence is that storage time is long.
In an embodiment of the present application, the corresponding sequential operation module includes:
and the threshold modifying submodule is used for modifying the threshold of the medium judgment data of 0 or 1 according to the corresponding Retry Table sequence of the current state and performing Read Retry operation.
In an embodiment of the present application, the apparatus further includes:
the success judging module is used for judging whether the Read Retry operation is successful or not;
and the process exit module is used for taking the threshold value as the initial value of the Read Retry and exiting the Read Retry process when the Read Retry operation is successful.
In summary, by determining whether the current state of the flash Block has a Read Retry or not, when the current state of the flash Block has a Retry, performing a Read Retry operation according to a prestored corresponding Retry Table sequence of the previous current state of the Block, and when the current state of the flash Block has no Retry, performing a Read Retry according to a prestored default Retry Table sequence. The method and the device realize the successful Retry of the Table value through the history data record, preferentially select the Table value which can Read back the data to perform Retry when the Retry occurs, and thus improve the efficiency of Read Retry.
For the device embodiment, since it is basically similar to the method embodiment, the description is simple, and for the relevant points, refer to the partial description of the method embodiment.
The embodiment of the invention also provides a device, which comprises at least one processor and a memory which is used for being connected with the at least one processor in a communication way; the memory stores instructions executable by the at least one processor to enable the at least one processor to perform a method of flash Read Retry error correction as described above.
The memory, which is a non-transitory computer readable storage medium, may be used to store non-transitory software programs as well as non-transitory computer executable programs. Further, the memory may include high speed random access memory, and may also include non-transitory memory, such as at least one disk memory, flash memory device, or other non-transitory solid state storage device. In some embodiments, the memory optionally includes memory remotely located from the control processor, and these remote memories may be connected to the power transmission circuit across the smart identification device via a network. Examples of such networks include, but are not limited to, the internet, intranets, local area networks, mobile communication networks, and combinations thereof.
Embodiments of the present invention also provide a computer-readable storage medium, which stores computer-executable instructions, which are executed by one or more control processors, for example, by a control processor, and enable the one or more control processors to perform a method for flash Read Retry error correction in the above method embodiments, for example, perform the above-described method steps S101 to S103 in fig. 1.
The above-described embodiments of the apparatus are merely illustrative, wherein the units illustrated as separate components may or may not be physically separate, i.e. may be located in one place, or may also be distributed over a plurality of network elements. Some or all of the modules may be selected according to actual needs to achieve the purpose of the solution of the present embodiment.
One of ordinary skill in the art will appreciate that all or some of the steps, systems, and methods disclosed above may be implemented as software, firmware, hardware, and suitable combinations thereof. Some or all of the physical components may be implemented as software executed by a processor, such as a central processing unit, digital signal processor, or microprocessor, or as hardware, or as an integrated circuit, such as an application specific integrated circuit. Such software may be distributed on computer readable media, which may include computer storage media (or non-transitory media) and communication media (or transitory media). The term computer storage media includes volatile and nonvolatile, removable and non-removable media implemented in any method or technology for storage of information such as computer readable instructions, data structures, program modules or other data, as is well known to those of ordinary skill in the art. Computer storage media includes, but is not limited to, RAM, ROM, EEPROM, flash memory or other memory technology, CD-ROM, Digital Versatile Disks (DVD) or other optical disk storage, magnetic cassettes, magnetic tape, magnetic disk storage or other magnetic storage devices, or any other medium which can be used to store the desired information and which can accessed by a computer. In addition, communication media typically embodies computer readable instructions, data structures, program modules or other data in a modulated data signal such as a carrier wave or other transport mechanism and includes any information delivery media as known to those skilled in the art.
While the preferred embodiments of the present invention have been described, the present invention is not limited to the above embodiments, and those skilled in the art can make various equivalent modifications or substitutions without departing from the spirit of the present invention, and such equivalent modifications or substitutions are included in the scope of the present invention defined by the claims.
Claims (10)
1. A method for error correction of a flash Read Retry, the method comprising:
judging whether the current state of the flash memory block is subjected to Read Retry or not;
when the current state of the flash Block is subjected to Retry, performing Read Retry operation according to a prestored corresponding Retry Table sequence of the last current state of the Block;
and when the current state of the flash block does not have Retry, performing Read Retry according to a prestored default Retry Table sequence.
2. The method of claim 1, wherein a Retry Table0 sequence, a Retry Table1 sequence and a Retry Table2 sequence are pre-stored, the status corresponding to the Retry Table0 sequence is that the Read times and the P/E value are high, the status corresponding to the Retry Table1 sequence is that the temperature is high during writing and reading, and the status corresponding to the Retry Table2 sequence is that the storage time is long.
3. The method of claim 1, wherein when a Retry occurs in a current state of the flash Block, performing a Read Retry operation according to a prestored corresponding Retry Table sequence of the previous current state of the Block includes:
and modifying the threshold of the medium judgment data of 0 or 1 according to the corresponding Retry Table sequence of the current state, and performing Read Retry operation.
4. The method for error correction of the flash memory Read Retry according to claim 3, wherein after modifying the threshold of the medium judgment data to "0" or "1" according to the corresponding Retry Table sequence of the current state and performing the Read Retry operation, the method further comprises:
judging whether the Read Retry operation is successful;
and when the Read Retry operation is successful, taking the threshold value as the initial value of the Read Retry, and exiting the Read Retry process.
5. An apparatus for error correction of a flash Read Retry, the apparatus comprising:
the state generation judging module is used for judging whether the current state of the flash memory block passes Read Retry or not;
the corresponding sequence operation module is used for performing Read Retry operation according to a prestored corresponding Retry Table sequence of the last current state of the Block when Retry occurs in the current state of the flash Block;
and the default sequence operation module is used for performing Read Retry according to a prestored default Retry Table sequence when Retry does not occur in the current state of the flash block.
6. The device for flash Read Retry error correction according to claim 5, wherein a Retry Table0 sequence, a Retry Table1 sequence and a Retry Table2 sequence are pre-stored, the status corresponding to the Retry Table0 sequence is that the Read times and the P/E values are high, the status corresponding to the Retry Table1 sequence is that the temperature is high during writing and reading, and the status corresponding to the Retry Table2 sequence is that the storage time is long.
7. The apparatus of claim 5, wherein the corresponding sequential operation module comprises:
and the threshold modifying submodule is used for modifying the threshold of the medium judgment data of 0 or 1 according to the corresponding Retry Table sequence of the current state and performing Read Retry operation.
8. The apparatus of claim 7, wherein the apparatus further comprises:
the success judging module is used for judging whether the Read Retry operation is successful or not;
and the process exit module is used for taking the threshold value as the initial value of the Read Retry and exiting the Read Retry process when the Read Retry operation is successful.
9. An apparatus comprising at least one processor and a memory communicatively coupled to the at least one processor; the memory stores instructions executable by the at least one processor to enable the at least one processor to perform the method of flash Read Retry error correction as claimed in any one of claims 1 to 4.
10. A computer-readable storage medium having stored thereon computer-executable instructions for causing a computer to perform the method of flash Read Retry error correction as claimed in any one of claims 1 to 4.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110825587.XA CN113707211B (en) | 2021-07-21 | Flash memory READ RETRY error correction method and device |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110825587.XA CN113707211B (en) | 2021-07-21 | Flash memory READ RETRY error correction method and device |
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| CN113707211A true CN113707211A (en) | 2021-11-26 |
| CN113707211B CN113707211B (en) | 2024-05-10 |
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