CN113702686B - Lossless charge pump voltage detection circuit - Google Patents
Lossless charge pump voltage detection circuit Download PDFInfo
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- CN113702686B CN113702686B CN202111054317.XA CN202111054317A CN113702686B CN 113702686 B CN113702686 B CN 113702686B CN 202111054317 A CN202111054317 A CN 202111054317A CN 113702686 B CN113702686 B CN 113702686B
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- 238000001514 detection method Methods 0.000 title claims abstract description 39
- 230000001066 destructive effect Effects 0.000 claims 1
- 238000000034 method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R19/00—Arrangements for measuring currents or voltages or for indicating presence or sign thereof
- G01R19/0084—Arrangements for measuring currents or voltages or for indicating presence or sign thereof measuring voltage only
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Abstract
The application relates to a lossless charge pump voltage detection circuit, which is used for leading the voltage of a charge pump out through a grid electrode and then completing the detection of the voltage in a power supply voltage domain. This part is lossless, since the gate is dc-free. Since the voltage of the charge pump is generally higher than the power supply voltage, it is equivalent to detecting a high voltage with a low voltage circuit. The lossless charge pump voltage detection circuit can accurately control the output voltage of the charge pump. The voltage detection circuit detects the output voltage VCP of the charge pump, when the voltage of the VCP reaches a set target value, the voltage detection circuit sends an ENABLE signal to close the charge pump circuit, and if the voltage of the VCP does not reach the target value, the charge pump continues to work until the voltage of the VCP reaches the target value. The voltage detection circuit works outside the charge pump, does not consume the charge on the charge pump, and is a nondestructive voltage detection for the charge pump.
Description
Technical Field
The application belongs to the technical field of semiconductors, and particularly relates to a lossless charge pump voltage detection circuit and a detection method.
Background
The charge pump generation circuit requires a charge pump voltage detection circuit to control the output voltage of the charge pump. Due to the requirement of low power consumption, the charge pump needs to be reduced as much as possible, and especially in the case of small output power consumption of the charge pump, the smaller the static power consumption of the charge pump is, the better. The charge pump voltage detection circuit consumes a part of current, and the larger the part of current is, the charge pump needs to be started continuously to supplement the charge lost by the detection circuit, which is equivalent to the increase of the load of the charge pump.
Disclosure of Invention
The application aims to solve the technical problem of providing a nondestructive charge pump voltage detection circuit, which eliminates the influence of the detection circuit on a charge pump, keeps the charge of the charge pump as much as possible and reduces the working time of the charge pump.
In order to solve the technical problems, the application adopts a technical scheme that: the lossless charge pump voltage detection circuit is connected with the output voltage VCP of the charge pump, and the output end of the voltage detection circuit is an ENABLE signal output end and is used for sending a signal for closing the charge pump circuit.
Further, the lossless charge pump voltage detection circuit includes MOS transistors M0 to M8, the gate of MOS transistor M0 is connected to the output voltage VCP of the charge pump, the drain of MOS transistor M0 is connected to the source of MOS transistor M5, the source of MOS transistor M4, the drain and gate of MOS transistor M8, the source of MOS transistor M0 is connected to one end of resistor R1, the other end of resistor R1 is connected to the drain and gate of MOS transistor M6 and the gate of MOS transistor M7, the source of MOS transistor M6 and the source of MOS transistor M7 are grounded, the drain of MOS transistor M7 is connected to the drain of MOS transistor M5, the gate of MOS transistor M5 is connected to the gate of MOS transistor M4, the drain and the drain of MOS transistor M3, the gate of MOS transistor M3 is connected to the output of operational amplifier A1, the source of MOS transistor M3 is connected to the drain of MOS transistor M2 and the first input of operational amplifier A1, the second input of operational amplifier a 2 is connected to one end of resistor R2 and the drain of MOS transistor M1, the other end of resistor R2 is connected to the drain of MOS transistor M8, and the drain of MOS transistor M8 is connected to the gate of MOS transistor M2 and the gate of MOS transistor M2 is connected to the drain of MOS transistor M2.
Further, an ENABLE signal end is arranged between the drain electrode of the MOS tube M5 and the drain electrode of the MOS tube M7.
Further, the resistor R1 is formed by connecting one resistor or a plurality of resistors in series.
Further, the resistor R2 is formed by connecting one resistor or a plurality of resistors in series.
The application has the following advantages:
(1) The lossless charge pump voltage detection circuit works outside the charge pump, does not consume the charge on the charge pump, and is a lossless voltage detection for the charge pump;
(2) The application can accurately control the output voltage of the charge pump, when the voltage of the VCP reaches a set target value, the voltage detection circuit sends an ENABLE signal, the charge pump circuit is closed, and if the voltage of the VCP does not reach the target value, the charge pump continues to work until the voltage of the VCP reaches the target value.
Drawings
FIG. 1 is a schematic diagram of a method for lossless charge pump voltage detection according to the present application.
Fig. 2 is a schematic diagram of a lossless charge pump voltage detection circuit according to the present application.
Detailed Description
In order that the above objects, features and advantages of the application will be readily understood, a more particular description of the application will be rendered by reference to specific embodiments thereof which are illustrated in the appended drawings.
In the following description, numerous specific details are set forth in order to provide a thorough understanding of the present application, but the present application may be embodied in other ways than those described herein, and persons skilled in the art will be able to make similar generalizations without departing from the spirit of the application and therefore the application is not limited to the specific embodiments disclosed below.
As shown in FIG. 1, the lossless charge pump voltage detection circuit of the application leads the voltage of the charge pump out through the grid electrode, and then completes the detection of the voltage in the power supply voltage domain. This part is lossless, since the gate is dc-free. Since the voltage of the charge pump is generally higher than the power supply voltage, it is equivalent to detecting a high voltage with a low voltage circuit.
The lossless charge pump voltage detection circuit can accurately control the output voltage of the charge pump. The voltage detection circuit detects the output voltage VCP of the charge pump, when the voltage of the VCP reaches a set target value, the voltage detection circuit sends an ENABLE signal to close the charge pump circuit, and if the voltage of the VCP does not reach the target value, the charge pump continues to work until the voltage of the VCP reaches the target value. The voltage detection circuit works outside the charge pump, does not consume the charge on the charge pump, and is a nondestructive voltage detection for the charge pump.
As shown in FIG. 2, the lossless charge pump voltage detection circuit of the application comprises MOS transistors M0-M8, wherein the grid electrode of the MOS transistor M0 is connected with the output voltage VCP of a charge pump, the drain electrode of the MOS transistor M0 is connected with the source electrode of the MOS transistor M5, the source electrode of the MOS transistor M4, the drain electrode and the grid electrode of the MOS transistor M8, the source electrode of the MOS transistor M0 is connected with one end of a resistor R1, the other end of the resistor R1 is connected with the drain electrode and the grid electrode of the MOS transistor M6, the source electrode of the MOS transistor M6 is grounded, the drain electrode of the MOS transistor M7 is connected with the drain electrode of the MOS transistor M5, the grid electrode of the MOS transistor M5 is connected with the grid electrode of the MOS transistor M4, the drain electrode of the MOS transistor M3, the grid electrode of the MOS transistor M3 is connected with the output end of an operational amplifier A1, the source electrode of the MOS transistor M3 is connected with the drain electrode of the MOS transistor M2 and the first input end of the operational amplifier A1, the second input end of the operational amplifier A1 is connected with one end of the drain electrode of the MOS transistor M1, the other end of the resistor R2 is connected with the drain electrode of the MOS transistor M8, and the drain electrode of the MOS transistor M2 is connected with the MOS transistor M2, and the drain electrode of the MOS transistor M2 is connected with the grid electrode of the MOS transistor M2 is connected with the MOS transistor M2;
an ENABLE signal end is arranged between the drain electrode of the MOS tube M5 and the drain electrode of the MOS tube M7.
The working principle of the application is as follows:
when the power supply voltage VDD is fixed, the current of I1 is controlled by VB by: by arranging M1 in the linear region, the on-resistance between the M1 source and drain can be adjusted by the VB voltage. Thus, when VDD is fixed, the resistance of the path of I1 can be adjusted by VB, that is, the magnitude of I1 can be set by VB.
Because of the clamping effect of A1, the X voltage is equal to the Y voltage, so that M1 and M2 have the same working state, and the proportional relation between the current of I2 and I1 is determined by the size ratio of M1 and M2. One typical arrangement is to let I1 equal I2. The current in M5 is a mirror image of I2.
When the power supply voltage VDD is fixed, the current of I0 is controlled by VCP. The method comprises the following steps: by configuring M0 in the linear region, the on-resistance between the M0 source and drain can be adjusted by the VCP voltage. Thus, when VDD is fixed, the resistance of the I0 path can be adjusted by VCP, i.e., the I0 size can be set by VCP.
The circuit structure of the I1 and I0 paths is the same, except that the device locations are different. The current magnitude of I1 is set by the gate-source voltage of M1, the voltage of VB to GND, and the current magnitude of I0 is set by the gate-source voltage of M0. vb=vcp-VDD-vds_m0, where vds_m0 is the source-drain voltage of M0. When the size of M0 is configured, the size of the resistor is adjusted so that VDS_M0 is much smaller than VDD. Then VCP-VDD-vds_m0 may be approximated as VCP-VDD.
When i1=i0, it means vb=vcp-VDD. Thereby enabling control of VCP via VB.
When I0 is greater than I1, meaning VCP-VDD > VB, ENABLE output ENABLE is low, and the charge pump stops working. VCP stops rising.
When I0 is less than I1, meaning VCP-VDD < VB, ENABLE output ENABLE is high, the charge pump is operating. The VCP continues to rise until I0 is greater than I1 and the charge pump stops.
The foregoing has described in detail a lossless charge pump voltage detection circuit provided by the present application, and specific examples have been used herein to illustrate the principles and embodiments of the present application, the above examples being provided only to assist in understanding the method and core ideas of the present application; meanwhile, as those skilled in the art will have variations in the specific embodiments and application scope in accordance with the ideas of the present application, the present description should not be construed as limiting the present application in view of the above.
Claims (3)
1. The non-destructive charge pump voltage detection circuit is characterized in that: the voltage detection circuit is connected with the output voltage VCP of the charge pump, the output end of the voltage detection circuit is an ENABLE signal output end and is used for sending out a signal for closing the charge pump circuit, the voltage detection circuit comprises MOS tubes M0-M8, the grid electrode of the MOS tube M0 is connected with the output voltage VCP of the charge pump, the drain electrode of the MOS tube M0 is connected with the source electrode of the MOS tube M5, the source electrode of the MOS tube M4, the drain electrode and the grid electrode of the MOS tube M8, the source electrode of the MOS tube M0 is connected with one end of a resistor R1, the other end of the resistor R1 is connected with the drain electrode of the MOS tube M6 and the grid electrode of the MOS tube M7, the drain electrode of the MOS tube M7 is connected with the drain electrode of the MOS tube M5, the grid electrode of the MOS tube M4 is connected with the drain electrode of the MOS tube M3, the grid electrode of the MOS tube M3 is connected with the output end of the operational amplifier A1, the source electrode of the MOS tube M2 is connected with the first input end of the MOS tube A1, the drain electrode of the MOS tube M2 is connected with the MOS tube B1, the drain electrode of the MOS tube M2 is connected with the drain electrode of the MOS tube M2, and the drain electrode of the MOS tube 2 is connected with the drain electrode of the MOS tube M2, and the drain electrode of the MOS tube 2 is connected with the MOS tube 2, the drain electrode of the MOS tube 2, the MOS tube 2 is connected with the drain electrode of the MOS tube 2, the drain electrode is the MOS tube 2 is the drain electrode is the MOS tube and the MOS electrode is the MOS tube 2.
2. The lossless charge pump voltage detection circuit according to claim 1, wherein: the resistor R1 is formed by connecting one resistor or a plurality of resistors in series.
3. The lossless charge pump voltage detection circuit according to claim 1, wherein: the resistor R2 is formed by connecting one resistor or a plurality of resistors in series.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111054317.XA CN113702686B (en) | 2021-09-09 | 2021-09-09 | Lossless charge pump voltage detection circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202111054317.XA CN113702686B (en) | 2021-09-09 | 2021-09-09 | Lossless charge pump voltage detection circuit |
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| Publication Number | Publication Date |
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| CN113702686A CN113702686A (en) | 2021-11-26 |
| CN113702686B true CN113702686B (en) | 2023-12-08 |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003217281A (en) * | 2002-01-24 | 2003-07-31 | Mitsubishi Electric Corp | Voltage detection circuit |
| CN103490624A (en) * | 2013-09-25 | 2014-01-01 | 北京中科微电子技术有限公司 | Self-adaption frequency charge pump circuit |
| JP2017135532A (en) * | 2016-01-27 | 2017-08-03 | 株式会社リコー | Voltage detection circuit and charge pump circuit |
| CN112350568A (en) * | 2020-09-27 | 2021-02-09 | 广东工业大学 | Low-power-consumption high-switching-rate charge pump circuit |
| CN112636588A (en) * | 2020-12-30 | 2021-04-09 | 深圳市芯天下技术有限公司 | Negative-pressure charge pump circuit with voltage establishment mark and flash chip |
-
2021
- 2021-09-09 CN CN202111054317.XA patent/CN113702686B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003217281A (en) * | 2002-01-24 | 2003-07-31 | Mitsubishi Electric Corp | Voltage detection circuit |
| CN103490624A (en) * | 2013-09-25 | 2014-01-01 | 北京中科微电子技术有限公司 | Self-adaption frequency charge pump circuit |
| JP2017135532A (en) * | 2016-01-27 | 2017-08-03 | 株式会社リコー | Voltage detection circuit and charge pump circuit |
| CN112350568A (en) * | 2020-09-27 | 2021-02-09 | 广东工业大学 | Low-power-consumption high-switching-rate charge pump circuit |
| CN112636588A (en) * | 2020-12-30 | 2021-04-09 | 深圳市芯天下技术有限公司 | Negative-pressure charge pump circuit with voltage establishment mark and flash chip |
Non-Patent Citations (2)
| Title |
|---|
| DAB射频接收机中的高性能电荷泵设计;唐路;王志功;朱存良;徐建;俞菲;;东南大学学报(自然科学版)(06);1047-1051 * |
| 一种低电压、高增益电荷泵;杨盛光;何书专;高明伦;李伟;周松明;;电子与信息学报(08);2001-2005 * |
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| CN113702686A (en) | 2021-11-26 |
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