CN113697762A - Differential pressure resonance pressure sensitive chip probe of isolation packaging structure and packaging method - Google Patents
Differential pressure resonance pressure sensitive chip probe of isolation packaging structure and packaging method Download PDFInfo
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- CN113697762A CN113697762A CN202110983368.4A CN202110983368A CN113697762A CN 113697762 A CN113697762 A CN 113697762A CN 202110983368 A CN202110983368 A CN 202110983368A CN 113697762 A CN113697762 A CN 113697762A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0035—Packages or encapsulation for maintaining a controlled atmosphere inside of the chamber containing the MEMS
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/0058—Packages or encapsulation for protecting against damages due to external chemical or mechanical influences, e.g. shocks or vibrations
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00277—Processes for packaging MEMS devices for maintaining a controlled atmosphere inside of the cavity containing the MEMS
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L13/00—Devices or apparatus for measuring differences of two or more fluid pressure values
- G01L13/02—Devices or apparatus for measuring differences of two or more fluid pressure values using elastically-deformable members or pistons as sensing elements
- G01L13/025—Devices or apparatus for measuring differences of two or more fluid pressure values using elastically-deformable members or pistons as sensing elements using diaphragms
- G01L13/026—Devices or apparatus for measuring differences of two or more fluid pressure values using elastically-deformable members or pistons as sensing elements using diaphragms involving double diaphragm
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0264—Pressure sensors
Abstract
A differential pressure resonance pressure sensitive chip probe with an isolation packaging structure and a packaging method relate to a probe and a packaging method thereof. The invention aims to solve the problems of low Q value, low measurement precision and low long-term stability of the conventional resonant pressure sensitive chip. The Kovar alloy pin is arranged on a lead hole of a sealing tube seat, a silicon resonance pressure sensitive chip is arranged on a chip bonding surface of the sealing tube seat, and the silicon resonance pressure sensitive chip and the Kovar alloy pin are connected through an electrode bonding lead; the two corrugated diaphragms are respectively arranged on the upper corrugated diaphragm contact surface and the lower corrugated diaphragm contact surface, the two pressure rings are respectively pressed on the two corrugated diaphragms, and the isolation medium is filled in the closed cavity; the silicon resonance pressure sensitive chip realizes differential pressure measurement through two pressure resonators. The packaging method comprises the following steps: and carrying out secondary packaging on the resonance layer to enable the silicon resonance pressure sensitive chip to work in an isolation medium. The invention is used for measuring pressure and packaging the pressure chip probe.
Description
Technical Field
The invention relates to a resonant pressure sensitive chip probe and a packaging method, in particular to a differential pressure resonant pressure sensitive chip probe with an isolation packaging structure and a packaging method, and belongs to the field of MEMS resonant pressure sensors.
Background
The silicon resonance pressure sensor indirectly measures pressure by measuring the natural frequency of silicon, the precision is 1-2 orders of magnitude higher than that of a common pressure sensor, the operation is reliable, and the stability and the repeatability are better. The traditional silicon resonance pressure transmission realizes pressure measurement by directly contacting with the measured pressure, and can be suitable for high-precision pressure measurement of clean gas; when the pressure environment to be measured is in the pressure measurement of highly corrosive liquid or gas environment (seawater, oil circuit, etc.), the traditional silicon resonance pressure sensor works in a corrosion state for a long time, which easily causes structural damage of the silicon resonance pressure probe and corrosion of the pressure chip, resulting in performance reduction or sensor failure.
Meanwhile, the core part of the silicon resonance pressure sensor is a resonator, the Q value is a core index for evaluating the resonator, and the performance of the resonator is better when the Q value is larger. The stable packaging environment can ensure that the resonator works with a fixed Q value, thereby ensuring that the silicon resonance pressure sensor has high stability. The leakage rate is an important parameter for the stability of the resonant pressure sensor chip. The most common pressure absolute pressure measurement die-sealed cavities are prepared by silicon-silicon bonding, silicon-glass bonding, and other crystalline material bonding.
The support beam of the conventional resonant pressure sensitive chip has low strength and rigidity, and the resonant frequency is low, so that the Q value of a core index is low, and the measurement precision and the application range of the chip are influenced. Meanwhile, the existing packaging method generally adopts the structure that the absolute pressure cavity is exposed in the atmospheric pressure range, so that the leakage rate of the high-precision absolute pressure sensor sealing cavity is increased, the pressure in the vacuum cavity is increased, the signal output value of the sensor chip is directly influenced, and the problem that the measurement precision and the long-term stability of the sensor chip are reduced is caused.
In summary, the conventional resonant pressure sensitive chip has the problems that the Q value is low and the measurement accuracy and the application range are affected, and the conventional packaging method has the problems that the measurement accuracy and the long-term stability are reduced.
Disclosure of Invention
The invention aims to solve the problems that the measurement precision and the application range of the conventional resonant pressure sensitive chip are influenced by the low Q value, and the measurement precision and the long-term stability of the conventional packaging method are reduced. Further provides a differential pressure resonance pressure sensitive chip probe of an isolation packaging structure and a packaging method.
The technical scheme of the invention is as follows: a differential pressure resonance pressure sensitive chip probe with an isolation packaging structure comprises two pressure rings, two corrugated diaphragms, a silicon resonance pressure sensitive chip, Kovar alloy pins, an electrode bonding lead, a probe medium transfer channel, a sealing tube seat and an isolation medium,
the upper end face of the sealing tube seat is an upper corrugated diaphragm contact face, the lower end face of the sealing tube seat is a lower corrugated diaphragm contact face, a stepped groove is formed in the upper corrugated diaphragm contact face, the upper stepped face of the stepped groove is a lead hole face, the lower stepped face is a chip bonding face, a probe medium transfer channel is formed in the chip bonding face, a plurality of lead holes are vertically formed in the lead hole face, an upper annular sealing groove, an external lead groove and a lower annular sealing groove are formed in the upper portion, the middle portion and the lower portion of the outer cylindrical face of the sealing tube seat respectively, and an inwards-concave lower end medium cavity is formed in the lower end face of the sealing tube seat;
the Kovar alloy pin is vertically arranged on a lead hole of the sealing tube seat in a glass sintering mode, the silicon resonance pressure sensitive chip is arranged on a chip bonding surface of the sealing tube seat in an adhesive mode, a gap is reserved between the silicon resonance pressure sensitive chip and the side wall of the stepped groove, and the silicon resonance pressure sensitive chip and the Kovar alloy pin are connected through an electrode bonding lead; the two corrugated diaphragms are respectively arranged on the upper corrugated diaphragm contact surface and the lower corrugated diaphragm contact surface, the two pressing rings are respectively pressed on the two corrugated diaphragms, and the isolation medium is filled in a closed cavity formed among the gap, the probe medium transmission channel, the two corrugated diaphragms and the sealing tube seat; the silicon resonance pressure sensitive chip realizes differential pressure measurement through two pressure resonators in the resonance layer.
The invention also provides a packaging method, which comprises the following steps:
the method comprises the following steps: manufacturing and cleaning a sealing pipe seat;
sintering a lead hole and upper and lower pins in a sealing tube seat together by using glass slurry to form a sealing pin structure, wherein the sealing tube seat is made of stainless steel;
respectively clamping the silk fabric cleaning sealing tube seat stuck with acetone and absolute ethyl alcohol by using stainless steel tweezers with heads coated with polytetrafluoroethylene, cleaning the silk fabric cleaning sealing tube seat by using absolute ethyl alcohol for more than 20s, and drying the silk fabric cleaning sealing tube seat in a drying oven; sequentially putting the silicon resonance pressure sensitive chip into acetone and absolute ethyl alcohol, respectively carrying out ultrasonic cleaning on the sealing tube seat and the silicon resonance pressure sensitive chip for 15min, and sequentially putting the special fixture ceramic ring into acetone and absolute ethyl alcohol for ultrasonic cleaning for 15 +/-3 min;
step two: gluing and bonding;
fixing a sealing tube seat on a clamp, uniformly dotting 6 points on the sealing tube seat according to the shape of a silicon resonance pressure sensitive chip by using a toothpick 730 adhesive or using an automatic dispenser, then embedding the silicon resonance pressure sensitive chip into the silicon resonance pressure sensitive chip, pressing the upper part of an upper cover of the chip of the silicon resonance pressure sensitive chip by using a ceramic rod to ensure that an external pressure hole on the sealing tube seat corresponds to a first pressure sensing through hole and a second pressure sensing through hole of a stress isolation layer, then continuously picking 730 adhesive by using the toothpick or using the automatic dispenser for dispensing, enabling a kovar alloy pin to correspond to a through hole of a special clamp ceramic ring, protecting the kovar alloy pin, and taking out the ceramic ring after the adhesive is coated;
step three: curing the glue;
curing the sealing tube seat bonded with the silicon resonance pressure sensitive chip in the second step in a constant temperature and humidity environment for 20-30 hours;
step four: pressure welding of the electrode bonding lead;
step four, firstly: fixing the sealing tube seat on a clamp, and welding an electrode bonding lead and an extraction electrode together at the position of the distance from the tip of a cleaver to the diameter of the electrode bonding lead on the surface of the extraction electrode, which is 2.5 times of the diameter of the electrode bonding lead;
step four and step two: welding the other end of the electrode bonding lead on the kovar alloy pin by a hot welding pen, wherein the length of the electrode bonding lead is automatically formed when two points are pressure-welded;
step four and step three: carrying out a breaking force test on the electrode bonding lead until the breaking force meets the design requirement;
step five: performing insulation test on the kovar alloy pin and the sealing tube seat;
testing the insulation resistance between each pin of the kovar alloy pin and the sealing tube seat by using an insulation resistance tester, wherein the resistance is greater than a design limit value;
step six: testing the basic performance of the silicon resonance pressure sensitive chip;
the water absorption ball is adopted to blow and lead the pressure hole, the pressure change is less than hundreds of hertz, and the temperature frequency is not changed; at the moment, the silicon resonance pressure sensitive chip meets the design requirement;
step seven: welding the pressure ring and the corrugated diaphragm on the sealing pipe seat;
fixing a sealing pipe seat on a clamp, placing a corrugated diaphragm on the contact surface of the corrugated diaphragm, placing a pressing ring on the corrugated diaphragm, then welding by using argon arc welding or electron beams, and then carrying out a penetration test; repeating the step five;
step eight: injecting oil into a closed cavity in the sealing pipe seat to seal the oil;
step eight one: the BYS-II type double-chamber liquid sealing device is adopted to inject the isolating medium into the closed cavity in the sealed tube seat, and the vacuum degree is less than 10-9Pa, the isolation medium is inert organic liquid;
step eight two: sealing a medium injection hole with the thickness of 1.3mm by using a phi 2 steel ball, and then sealing and welding the medium injection hole filled with an isolation medium by adopting energy storage welding;
thus, the packaging of the resonant pressure sensitive chip probe of the isolation packaging structure is completed;
step nine: electrically testing the resonance pressure sensitive chip probe of the packaged isolation packaging structure;
the electrical test is carried out under the constant normal pressure condition, and when the resonance pressure sensitive chip probe does not generate the frequency hopping phenomenon and the frequency changes towards one direction, the resonance pressure sensitive chip probe is stable and qualified within the time of less than 3 seconds;
step ten: carrying out pressure fatigue and aging tests on the resonant pressure sensitive chip probe of the packaged isolation packaging structure;
the resonance pressure sensitive chip probe is arranged on a clamp and is connected with an air pressure fatigue machine or a hydraulic fatigue machine, the fatigue times are 5000/10000 times, and the resonance pressure sensitive chip probe is placed in a high-low temperature test box for temperature aging tests to release the internal stress of the resonance pressure sensitive chip probe together, so that the output stability of the resonance pressure sensitive chip of the isolation packaging structure is improved;
step eleven: performing air tightness detection on a resonance pressure sensitive chip probe of the packaged isolation packaging structure;
connecting the resonance pressure sensitive chip probe with a pressure controller, and carrying out air tightness detection, wherein the pressure change value is not more than +/-2 Pa, and at the moment, the air tightness of the resonance pressure sensitive chip probe is qualified;
step twelve: and carrying out laser marking and screening on the resonance pressure sensitive chip probe of the packaged isolation packaging structure, and switching to the next production stage.
Compared with the prior art, the invention has the following effects:
1. according to the differential pressure type silicon resonance pressure sensitive chip probe based on the isolated packaging structure, the chip adopts an integrated double-resonator design to realize multi-path pressure differential pressure measurement, and the double-resonator can reduce environmental interference such as temperature, acceleration and the like through real-time signal acquisition and differential processing, so that the accuracy of the sensor is improved, and the measurement accuracy of the differential pressure of the sensor is improved; meanwhile, the resonance chip is packaged for the second time, so that the resonance chip works in an isolation medium, high-precision pressure multipath measurement in a corrosive environment is realized, and the reliability of the probe in a severe environment is improved; meanwhile, as the isolation medium does not enter the absolute pressure chamber, the differential pressure type silicon resonance pressure chip has very low leakage rate, thereby improving the stability of the differential pressure type silicon resonance pressure sensor; because the probe adopts single-chip double resonance, single sealing tube seat 7 and double ripple diaphragm 2 to constitute the main body structure of probe, can be used to the differential pressure in the measurement pipeline to realize high accuracy flow measurement through calculating, but wide application in differential pressure, flow measurement in the corrosive environment, like the oil circuit, have advantages such as small, processing is simple, easy installation.
2. According to the differential pressure type silicon resonance pressure sensitive chip probe based on the isolation type packaging structure, the differential pressure type silicon resonance pressure sensitive chip (3) works in an isolation medium through secondary isolation packaging, high-precision pressure multi-path measurement in severe environments such as a corrosion environment is realized, and the reliability of the differential pressure type silicon resonance pressure sensitive chip (3) is improved; meanwhile, the inside of the probe is isolated from the outside, the integral leakage rate of the chip is reduced, the stability of the differential pressure type silicon resonance pressure sensitive chip 3 can be improved, and meanwhile, the differential pressure measurement precision of the sensor can be greatly improved through real-time pressure differential acquisition processing of double resonances.
3. The invention adopts the isolation packaging technology, the silicon resonance pressure chip is isolated from the external environment and completely works in the isolation medium, so that the silicon resonance pressure sensor can also realize the measurement of high-precision pressure in the severe environment, and the working reliability of the sensor in the complex environment is improved; silicon resonance pressure chip package has fixed Q value in stable isolation medium, simultaneously because isolation medium thing does not get into the absolute pressure cavity, the chip has very low leak rate, improve the long-term stability of sensor, silicon resonance pressure chip adopts the design of dual resonator simultaneously, dual resonator has the same operational environment, can effectively reduce the temperature, influence such as acceleration, realize the independent real-time pressure measurement of double-circuit, can handle alone on dual resonator's signal processing, obtain pressure differential signal, also can carry out signal processing through the difference mode, obtain differential signal, obtain higher pressure measurement precision.
Drawings
FIG. 1 is a full sectional view of a differential pressure resonant pressure sensitive chip probe of the isolation package structure of the present invention;
FIG. 2 is a top view of a convoluted diaphragm; FIG. 3 is a front cross-sectional view of FIG. 2;
FIG. 4 is a front cross-sectional view of a silicon resonant pressure sensitive chip;
FIG. 5 is a front cross-sectional view of a kovar pin;
FIG. 6 is a front cross-sectional view of the sealing stem;
FIG. 7 is a top view of the sealing stem;
FIG. 8 is a side cross-sectional view of the sealing stem;
FIG. 9 is a rear view of the sealing stem;
fig. 10 is a top view of a pressure resonator.
Detailed Description
The technical scheme of the invention is not limited to the specific embodiments listed below, and any reasonable combination of the specific embodiments is included.
The first embodiment is as follows: the differential pressure resonance pressure sensitive chip probe with the isolation packaging structure of the embodiment is described with reference to fig. 1 to 10, and comprises two pressure rings 1, two corrugated diaphragms 2, a silicon resonance pressure sensitive chip 3, kovar alloy pins 4, an electrode bonding lead 5, a probe medium transmission channel 6, a sealing pipe seat 7 and an isolation medium 8,
the upper end face of the sealing tube seat 7 is an upper corrugated diaphragm contact face 701-1, the lower end face of the sealing tube seat 7 is a lower corrugated diaphragm contact face 701-2, a stepped groove is formed in the upper corrugated diaphragm contact face 701-1, the upper stepped face of the stepped groove is a lead hole face 704, the lower stepped face is a chip bonding face 702, the probe medium transfer channel 6 is formed in the chip bonding face 702, a plurality of lead holes 703 are vertically formed in the lead hole face 704, an upper annular sealing groove 705-1, an external lead groove 706 and a lower annular sealing groove 705-2 are respectively formed in the upper portion, the middle portion and the lower portion of the outer cylindrical face of the sealing tube seat 7, and an inward-concave lower end medium cavity 707 is formed in the lower end face of the sealing tube seat 7;
the Kovar alloy pin 4 is vertically arranged on a lead hole 703 of the sealing tube seat 7 in a glass sintering mode, the silicon resonance pressure sensitive chip 3 is arranged on a chip bonding surface 702 of the sealing tube seat 7 in an adhesive mode, a gap is reserved between the silicon resonance pressure sensitive chip 3 and the side wall of the stepped groove, and the silicon resonance pressure sensitive chip 3 and the Kovar alloy pin 4 are connected through an electrode bonding lead 5; the two corrugated diaphragms 2 are respectively arranged on the upper corrugated diaphragm contact surface 701-1 and the lower corrugated diaphragm contact surface 701-2, the two pressing rings 1 are respectively pressed on the two corrugated diaphragms 2, and the isolation medium 8 is filled in a closed cavity formed among the gap, the probe medium transfer channel 6, the two corrugated diaphragms 2 and the sealing tube seat 7; the silicon resonant pressure sensitive die 3 achieves differential pressure measurement through two pressure resonators in the resonant layer 302.
The second embodiment is as follows: the present embodiment is described with reference to fig. 4, the silicon resonant pressure sensitive chip 3 of the present embodiment includes a chip upper cover 301, a resonant layer 302, two silicon-based substrates 3021 and a stress isolation layer 303, the chip upper cover 301, the resonant layer 302, the silicon-based substrates 3021 and the stress isolation layer 303 are sequentially connected from top to bottom and are made into a whole, the lower end surfaces of the two silicon-based substrates 3021 are both provided with inverted trapezoidal pressure sensing grooves, wherein an absolute pressure chamber is formed between the chip upper cover 301 and the silicon-based substrates 3021, and the resonant layer 302 is located in the absolute pressure chamber. So set up, the trapezoidal pressure sensing groove of falling of terminal surface is convenient for accurate perception medium pressure under silicon substrate 3021 to transmit to resonant layer 302, the dead pressure cavity that forms simultaneously between silicon substrate 3021 and the silicon substrate 3021 is used for protecting resonant layer 302, avoids the resistance of other media that resonant layer 302 received when being in operating condition, and then influences probe measurement accuracy. Other components and connections are the same as those in the first embodiment.
The third concrete implementation mode: referring to fig. 4, the stress isolation layer 303 of this embodiment has a first pressure sensing via 3031 and a second pressure sensing via 3032 at positions directly below the two pressure resonators. The arrangement is convenient for transmitting pressure to the silicon substrate 3021 and further to the resonant layer 302, thereby achieving the purpose of pressure sensing. Other components and connection relationships are the same as those in the first or second embodiment.
The fourth concrete implementation mode: describing the present embodiment with reference to fig. 10, each pressure resonator in the resonance layer 302 of the present embodiment includes four extraction electrodes 3050, two drive electrodes 3023, a spare electrode 3024, two sensitive comb-teeth electrodes 3025, two stabilizing beams 3026, two crossbeams 3027, an anchor block 3028, and an electrode via 3029,
the two driving electrodes 3023 are arranged in parallel up and down, the left side and the right side of each driving electrode 3023 are respectively provided with one leading-out electrode 3050, the opposite sides of the two driving electrodes 3023 are provided with one sensitive comb-tooth electrode 3025, the inner sides of the two sensitive comb-tooth electrodes 3025 are respectively provided with one stabilizing beam 3026, the inner sides of the two stabilizing beams 3026 are respectively provided with one tie beam 3027, an anchor block 3028 is arranged between the two tie beams 3027, and the anchor block 3028 is connected with the spare electrode 3024 through an electrode passage 3029. So set up, electrode path 3029 constitutes triangle-shaped stable structure, under the assurance signal transmission prerequisite, promotes the intensity that the electrode was propped admittedly, can effectively promote the stability on resonance layer to be applicable to the deformation range that vibration and pressure variation of higher frequency arouse. Meanwhile, the anchor block 3028 is arranged, so that the side length of the force arm is increased, the torque generated by the stress of the anchor block 3028 can be effectively improved, and the deformation of the rear end connected with the related stress beam is improved. Thereby improving the resonant frequency and increasing the resolution of the sensor. Other components and connection relations are the same as those of any one of the first to third embodiments.
The fifth concrete implementation mode: the present embodiment will be described with reference to fig. 10, and the end portion of each tie beam 3027 of the present embodiment is a "Y" beam structure. So set up, "Y" type beam structure of two fixed fulcrums forms triangle-shaped stable structure, can promote rigidity intensity, improves the reliability of sensor. Other components and connection relations are the same as those of any one of the first to fourth embodiments.
The sixth specific implementation mode: describing the present embodiment with reference to fig. 10, each of the stabilizing beams 3026 of the present embodiment includes two stabilizing units that are bilaterally symmetric,
each stabilizing unit comprises a first connecting support beam 901, a first inclined-pulling beam parallel support beam 901-1, a first inclined-pulling beam vertical support beam 901-2, a first parallel support beam vertical beam 901-3, a first inclined-pulling beam stabilizing beam 901-4 and a second inclined-pulling beam stabilizing beam 901-5,
a trapezoid structure is formed among the first diagonal beam parallel support beam 901-1, the first diagonal beam stabilizing beam 901-4, the second diagonal beam stabilizing beam 901-5 and the sensitive comb electrodes 3025, the first diagonal beam vertical support beam 901-2 and the first parallel support beam vertical beam 901-3 are perpendicular to the first diagonal beam parallel support beam 901-1, and the first diagonal beam vertical support beam 901-2 and the first parallel support beam vertical beam 901-3, the first diagonal beam stabilizing beam 901-4, the second diagonal beam stabilizing beam 901-5 and the first diagonal beam parallel support beam 901-1 form a right triangle,
one end of the first connecting support beam 901 coincides with the intersection of the first diagonal beam vertical support beam 901-2 and the first diagonal beam parallel support beam 901-1, and the other end of the first connecting support beam 901 coincides with the intersection of the first parallel support beam vertical beam 901-3 and the second diagonal beam stabilizing beam 901-5. So set up, can form triangular supports structure, the intensity of each supporting beam of increase resonance layer and sensitive broach electrode 3025 draw to one side to increase mechanics vibration transmission intensity, improve chip vibration frequency, and then can effectively increase the measurement range, and reduced external disturbance, thereby promote stability. Other components and connection relations are the same as those of any one of the first to fifth embodiments.
The seventh embodiment: describing the present embodiment with reference to fig. 6 to 9, the probe medium delivery channel 6 of the present embodiment includes a medium groove 601 and a medium injection hole 602,
the medium groove 601 comprises a first medium groove 6011 and a second medium groove 6022, the first medium groove 6011 is horizontally arranged on the chip bonding surface 702, the second medium groove 6022 is vertically arranged along the axis of the sealing tube seat 7, and the lower end part of the second medium groove 6022 is communicated with the lower end medium cavity 707;
the medium injection hole 602 comprises a first medium injection hole 602-1 and a second medium injection hole 602-2, the first medium injection hole 602-1 is an "L" shaped hole, one end of the "L" shaped hole is connected with the end of the first medium groove 6011, the other end of the "L" shaped hole penetrates through the sealing tube seat 7, and the second medium injection hole 602-2 horizontally penetrates through the sealing tube seat 7 and is communicated with the second medium groove 6022.
So set up, isolation medium 8 effectively encircles silicon resonance pressure sensitive chip 3 respectively through first medium groove 6011 and second medium groove 6022 for two pressure resonators of silicon resonance pressure sensitive chip 3 are transmitted to external medium pressure accuracy, realize the independent real-time pressure measurement of double-circuit, and play the leak rate that reduces silicon resonance pressure sensitive chip 3, and carry out effective guard action to it. Other components and connection relations are the same as those of any one of the first to sixth embodiments.
The specific implementation mode is eight: the present embodiment will be described with reference to fig. 1 to 10, and the packaging method of the present embodiment is characterized in that: it comprises the following steps:
the method comprises the following steps: manufacturing and cleaning a sealing pipe seat 7;
sintering a lead hole 703 and upper and lower pins in a sealing tube seat 7 together by using glass slurry to form a sealing pin structure, wherein the sealing tube seat 7 is made of stainless steel;
respectively clamping the silk fabric cleaning sealing tube seat 7 stuck with acetone and absolute ethyl alcohol by using stainless steel tweezers with heads coated with polytetrafluoroethylene, cleaning for more than 20s by using absolute ethyl alcohol, and drying in a drying oven; sequentially putting the silicon resonance pressure sensitive chip 3 into acetone and absolute ethyl alcohol, respectively carrying out ultrasonic cleaning on the sealing tube seat 7 and the silicon resonance pressure sensitive chip 3 for 15min, and sequentially putting the special fixture ceramic ring into acetone and absolute ethyl alcohol for ultrasonic cleaning for 15 +/-3 min;
step two: gluing and bonding;
fixing a sealing tube seat 7 on a clamp, uniformly dotting 6 points on the sealing tube seat 7 according to the shape of a silicon resonance pressure sensitive chip 3 by using a toothpick 730 adhesive or using an automatic dispenser, then embedding the silicon resonance pressure sensitive chip 3 therein, pressing the upper part of a chip upper cover 301 of the silicon resonance pressure sensitive chip 3 by using a ceramic rod, ensuring that an external pressure hole on the sealing tube seat 7 corresponds to a first pressure sensing through hole 3031 and a second pressure sensing through hole 3032 of a stress isolation layer 303, then continuously picking 730 adhesive by using the toothpick or using the automatic dispenser for dispensing, ensuring that a Kovar alloy pin 4 corresponds to a through hole of a special clamp ceramic ring, protecting the Kovar alloy pin 4, and taking out the ceramic ring after the adhesive is coated;
step three: curing the glue;
curing the sealing tube seat 7 bonded with the silicon resonance pressure sensitive chip 3 in the step two in a constant temperature and humidity environment for 20-30 hours;
step four: pressure welding of the electrode bonding lead 5;
step four, firstly: fixing the sealing tube seat 7 on a clamp, and welding the electrode bonding lead 5 and the extraction electrode 3050 together at the position of the distance from the tip of the cleaver to the diameter of the electrode bonding lead 5 on the surface of the extraction electrode 3050, wherein the diameter of the electrode bonding lead 5 is 2.5 times that of the extraction electrode 3050;
step four and step two: the other end of the electrode bonding lead 5 is welded on the kovar alloy pin 4 through a hot welding pen, and the length of the electrode bonding lead 5 is automatically formed when two points are welded;
step four and step three: performing a breaking force test on the electrode bonding lead 5 until the breaking force meets the design requirement;
step five: performing insulation test on the kovar alloy pin 4 and the sealing tube seat 7;
testing the insulation resistance between each pin of the kovar alloy pin 4 and the sealing tube seat 7 by using an insulation resistance tester, wherein the resistance is greater than a design limit value;
step six: testing the basic performance of the silicon resonance pressure sensitive chip 3;
the water absorption ball is adopted to blow and lead the pressure hole, the pressure change is less than hundreds of hertz, and the temperature frequency is not changed; at this time, the silicon resonance pressure sensitive chip 3 meets the design requirements;
step seven: welding the pressure ring 1 and the corrugated diaphragm 2 on the sealing pipe seat 7;
fixing a sealing tube seat 7 on a clamp, placing a corrugated diaphragm 2 on the corrugated diaphragm contact surface 701, placing a pressing ring 1 on the corrugated diaphragm 2, then performing argon arc welding or electron beam welding, and then performing a penetration test; repeating the step five;
step eight: injecting oil into a closed cavity in the sealing pipe seat 7 for oil sealing;
step eight one: the isolating medium 8 is injected into a closed cavity in the sealed tube seat 7 by adopting a BYS-II type double-chamber liquid sealing device, and the vacuum degree is less than 10-9Pa, the isolation medium 8 is inert organic liquid;
step eight two: sealing a 1.3mm medium injection hole 602 by using a phi 2 steel ball, and then sealing and welding the medium injection hole 602 filled with the isolation medium 8 by adopting energy storage welding;
thus, the packaging of the resonant pressure sensitive chip probe of the isolation packaging structure is completed;
step nine: electrically testing the resonance pressure sensitive chip probe of the packaged isolation packaging structure;
the electrical test is carried out under the constant normal pressure condition, and when the resonance pressure sensitive chip probe does not generate the frequency hopping phenomenon and the frequency changes towards one direction, the resonance pressure sensitive chip probe is stable and qualified within the time of less than 3 seconds;
step ten: carrying out pressure fatigue and aging tests on the resonant pressure sensitive chip probe of the packaged isolation packaging structure;
the resonance pressure sensitive chip probe is arranged on a clamp and is connected with an air pressure fatigue machine or a hydraulic fatigue machine, the fatigue times are 5000/10000 times, and the resonance pressure sensitive chip probe is placed in a high-low temperature test box for temperature aging tests to release the internal stress of the resonance pressure sensitive chip probe together, so that the output stability of the resonance pressure sensitive chip of the isolation packaging structure is improved;
step eleven: performing air tightness detection on a resonance pressure sensitive chip probe of the packaged isolation packaging structure;
connecting the resonance pressure sensitive chip probe with a pressure controller, and carrying out air tightness detection, wherein the pressure change value is not more than +/-2 Pa, and at the moment, the air tightness of the resonance pressure sensitive chip probe is qualified;
step twelve: and carrying out laser marking and screening on the resonance pressure sensitive chip probe of the packaged isolation packaging structure, and switching to the next production stage.
The working principle of the invention is as follows:
the invention is based on the secondary isolation packaging of the chip probe, so that the differential pressure type silicon resonance pressure sensitive chip 3 realizes indirect multi-path pressure measurement in a severe environment through the deformation of an isolation medium 8 (wherein, the isolation medium 8 comprises an upper end isolation medium 801 and a lower end isolation medium 802); meanwhile, the isolation medium 8 cannot enter the resonance layer 302, so that the leakage rate of the differential pressure type silicon resonance pressure sensitive chip 3 can be effectively reduced, and meanwhile, the differential pressure measurement is realized by the double-pressure resonator through an output signal. Sealing the differential pressure type silicon resonance pressure sensitive chip 3 into a sealing tube seat 7 filled with an isolation medium 8, welding a chip electrode and a kovar alloy pin 4 through an electrode bonding lead 5, transmitting a sensor signal, and simultaneously ensuring the sealing property of the whole sealing tube seat 7 through the kovar alloy pin 4; when the surface of the corrugated diaphragm 2 is subjected to recoverable deformation caused by pressure, the volume of the isolation medium 8 is changed, the special probe medium transmission structure 6 is designed to transmit the pressure change caused by the volume change to the pressure sensing surface of the pressure resonator of the differential pressure type silicon resonance pressure sensitive chip 3, and the signal output of the double pressure resonators can be realized; meanwhile, the double resonators in the secondary isolation packaging environment are in the same working environment (such as acceleration influence, temperature influence and the like), the pressure signals output by the double resonators are collected in real time, and the influence of other physical quantities such as temperature drift, acceleration and the like on the differential pressure type silicon resonance pressure sensitive chip 3 can be eliminated through differential processing of the pressure signals, so that high-precision differential pressure measurement can be realized. The invention can realize high-precision differential pressure measurement of the differential pressure type silicon resonance pressure sensitive chip 3 in severe environments such as corrosion and the like, and simultaneously effectively reduce the influence of leakage rate change on the stability of the sensor.
Claims (8)
1. The utility model provides an keep apart packaging structure differential pressure resonance pressure sensitive chip probe which characterized in that: it comprises two pressure rings (1), two corrugated diaphragms (2), a silicon resonance pressure sensitive chip (3), a kovar alloy pin (4), an electrode bonding lead (5), a probe medium transfer channel (6), a sealing tube seat (7) and an isolation medium (8),
the upper end face of the sealing tube seat (7) is an upper corrugated diaphragm contact face (701-1), the lower end face of the sealing tube seat (7) is a lower corrugated diaphragm contact face (701-2), a stepped groove is formed in the upper corrugated diaphragm contact face (701-1), the upper stepped face of the stepped groove is a lead hole face (704), the lower stepped face is a chip bonding face (702), a probe medium transfer channel (6) is formed in the chip bonding face (702), a plurality of lead holes (703) are vertically formed in the lead hole face (704), an upper annular sealing groove (705-1), an external lead groove (706) and a lower annular sealing groove (705-2) are respectively formed in the upper portion, the middle portion and the lower portion of the outer cylindrical face of the sealing tube seat (7), and a concave lower end medium cavity (707) is formed in the lower end face of the sealing tube seat (7);
the Kovar alloy pin (4) is vertically arranged on a lead hole (703) of the sealing tube seat (7) in a glass sintering mode, the silicon resonance pressure sensitive chip (3) is arranged on a chip bonding surface (702) of the sealing tube seat (7) in an adhesive mode, a gap is reserved between the silicon resonance pressure sensitive chip (3) and the side wall of the stepped groove, and the silicon resonance pressure sensitive chip (3) and the Kovar alloy pin (4) are connected through an electrode bonding lead (5); the two corrugated diaphragms (2) are respectively arranged on the upper corrugated diaphragm contact surface (701-1) and the lower corrugated diaphragm contact surface (701-2), the two pressing rings (1) are respectively pressed on the two corrugated diaphragms (2), and an isolation medium (8) is filled in a closed cavity formed among the gap, the probe medium transmission channel (6), the two corrugated diaphragms (2) and the sealing tube seat (7); the silicon resonance pressure sensitive chip (3) realizes differential pressure measurement through two pressure resonators in the resonance layer (302).
2. The isolated package structure differential pressure resonance pressure sensitive chip probe of claim 1, wherein: silicon resonance pressure sensitive chip (3) include on-chip lid (301), resonance layer (302), two silica-based substrate (3021) and stress isolation layer (303), chip lid (301), resonance layer (302), silica-based substrate (3021) and stress isolation layer (303) from top to bottom connect gradually and make an organic wholely, two silica-based substrate (3021) have all been seted up down trapezoidal pressure sensing groove on the lower terminal surface, wherein, form the absolute pressure cavity between chip lid (301) and silica-based substrate (3021), resonance layer (302) are located in the absolute pressure cavity.
3. The isolated package structure differential pressure resonance pressure sensitive chip probe of claim 2, wherein: and a first pressure sensing through hole (3031) and a second pressure sensing through hole (3032) are respectively formed in the stress isolation layer (303) at positions right below the two pressure resonators.
4. The isolated package structure differential pressure resonant pressure sensitive chip probe of claim 3, wherein: each pressure resonator in the resonance layer (302) comprises four extraction electrodes (3050), two driving electrodes (3023), a spare electrode (3024), two sensitive comb-tooth electrodes (3025), two stabilizing beams (3026), two transverse tension beams (3027), an anchor block (3028) and an electrode passage (3029),
two drive electrodes (3023) are arranged in parallel from top to bottom, a leading-out electrode (3050) is respectively installed on the left side and the right side of each drive electrode (3023), a sensitive comb-tooth electrode (3025) is installed on the opposite side of each drive electrode (3023), a stabilizing beam (3026) is respectively installed on the inner sides of the two sensitive comb-tooth electrodes (3025), a transverse tie beam (3027) is respectively installed on the inner sides of the two stabilizing beams (3026), an anchor block (3028) is installed between the two transverse tie beams (3027), and the anchor block (3028) is connected with a spare electrode (3024) through an electrode passage (3029).
5. The isolated package structure differential pressure resonant pressure sensitive chip probe of claim 4, wherein: the end part of each transverse pulling beam (3027) is of a Y-shaped beam structure.
6. The isolated package structure differential pressure resonant pressure sensitive chip probe of claim 5, wherein: each stabilizing beam (3026) comprises two stabilizing units which are symmetrical left and right,
each stabilizing unit comprises a first connecting support beam (901), a first inclined-pulling beam parallel support beam (901-1), a first inclined-pulling beam vertical support beam (901-2), a first parallel support beam vertical beam (901-3), a first inclined-pulling beam stabilizing beam (901-4) and a second inclined-pulling beam stabilizing beam (901-5),
a trapezoid structure is formed among the first inclined-pulling beam parallel supporting beam (901-1), the first inclined-pulling beam stabilizing beam (901-4), the second inclined-pulling beam stabilizing beam (901-5) and the sensitive comb electrode (3025), the first inclined-pulling beam vertical supporting beam (901-2) and the first parallel supporting beam vertical beam (901-3) are perpendicular to the first inclined-pulling beam parallel supporting beam (901-1), and a right-angled triangle is formed among the first inclined-pulling beam vertical supporting beam (901-2) and the first parallel supporting beam vertical beam (901-3), the first inclined-pulling beam stabilizing beam (901-4), the second inclined-pulling beam stabilizing beam (901-5) and the first inclined-pulling beam parallel supporting beam (901-1),
one end of the first connecting support beam (901) is superposed with the intersection of the first diagonal beam vertical support beam (901-2) and the first diagonal beam parallel support beam (901-1), and the other end of the first connecting support beam (901) is superposed with the intersection of the first parallel support beam vertical beam (901-3) and the second diagonal beam stabilizing beam (901-5).
7. The isolated package structure differential pressure resonant pressure sensitive chip probe of claim 6, wherein: the probe medium transmission channel (6) comprises a medium groove (601) and a medium injection hole (602),
the medium groove (601) comprises a first medium groove (6011) and a second medium groove (6022), the first medium groove (6011) is horizontally arranged on the chip bonding surface (702), the second medium groove (6022) is vertically arranged along the axis of the sealing tube seat (7), and the lower end part of the second medium groove (6022) is communicated with the lower end medium cavity (707);
the medium injection hole (602) comprises a first medium injection hole (602-1) and a second medium injection hole (602-2), the first medium injection hole (602-1) is an L-shaped hole, one end of the L-shaped hole is connected with the end of the first medium groove (6011), the other end of the L-shaped hole penetrates through the sealing pipe seat (7), and the second medium injection hole (602-2) horizontally penetrates through the sealing pipe seat (7) and is communicated with the second medium groove (6022).
8. A packaging method for an isolated packaging structure differential pressure resonance pressure sensitive chip probe according to any one of claims 1 to 7, characterized in that: it comprises the following steps:
the method comprises the following steps: manufacturing and cleaning a sealing pipe seat (7);
sintering a lead hole (703) in a sealing tube seat (7) and an upper pin and a lower pin together by using glass slurry to form a sealing pin structure, wherein the sealing tube seat (7) is made of stainless steel;
respectively clamping silk fabrics adhered with acetone and absolute ethyl alcohol by using stainless steel tweezers with heads coated with polytetrafluoroethylene to clean a sealing tube seat (7), then cleaning the sealing tube seat for more than 20 seconds by using absolute ethyl alcohol, and putting the sealing tube seat into a drying oven for drying; sequentially putting the silicon resonance pressure sensitive chip (3) into acetone and absolute ethyl alcohol, respectively carrying out ultrasonic cleaning on the sealing tube seat (7) and the silicon resonance pressure sensitive chip (3) for 15min, and sequentially putting the special fixture ceramic ring into acetone and absolute ethyl alcohol for ultrasonic cleaning for 15 +/-3 min;
step two: gluing and bonding;
fixing a sealing tube seat (7) on a clamp, uniformly dispensing 6 spots on the sealing tube seat (7) by using a toothpick 730 adhesive or using an automatic dispenser according to the shape of a silicon resonance pressure sensitive chip (3), then embedding the silicon resonance pressure sensitive chip (3) therein, pressing the upper part of a chip upper cover (301) of the silicon resonance pressure sensitive chip (3) by using a ceramic rod, ensuring that an external pressure hole on the sealing tube seat (7) corresponds to a first pressure sensing through hole (3031) and a second pressure sensing through hole (3032) of a stress isolation layer (303), then continuously dispensing 730 adhesive by using the toothpick or using the automatic dispenser, ensuring that a Kovar alloy pin (4) corresponds to a through hole of a special clamp ceramic ring, protecting the Kovar alloy pin (4), and taking out the ceramic ring after the adhesive is coated;
step three: curing the glue;
curing the sealing tube seat (7) bonded with the silicon resonance pressure sensitive chip (3) in the second step in a constant temperature and humidity environment for 20-30 hours;
step four: pressure welding of the electrode bonding lead (5);
step four, firstly: fixing the sealing tube seat (7) on a clamp, and welding the electrode bonding lead (5) and the extraction electrode (3050) together at the position of the distance from the top of the cleaver to the surface of the extraction electrode (3050) and the diameter of the electrode bonding lead (5) being 2.5 times;
step four and step two: the other end of the electrode bonding lead (5) is welded on the kovar alloy pin (4) through a hot welding pen, and the length of the electrode bonding lead (5) is automatically formed when two points are pressure-welded;
step four and step three: carrying out a breaking force test on the electrode bonding lead (5) until the breaking force meets the design requirement;
step five: performing insulation test on the kovar alloy pin (4) and the sealing tube seat (7);
testing the insulation resistance between each pin of the kovar alloy pin (4) and the sealing tube seat (7) by using an insulation resistance tester, wherein the resistance is greater than a design limit value;
step six: testing the basic performance of the silicon resonance pressure sensitive chip (3);
the water absorption ball is adopted to blow and lead the pressure hole, the pressure change is less than hundreds of hertz, and the temperature frequency is not changed; at the moment, the silicon resonance pressure sensitive chip (3) meets the design requirement;
step seven: welding the pressure ring (1) and the corrugated diaphragm (2) on the sealing pipe seat (7);
fixing a sealing pipe seat (7) on a clamp, placing a corrugated diaphragm (2) on the corrugated diaphragm contact surface (701), placing a pressing ring (1) on the corrugated diaphragm (2), then welding by utilizing argon arc welding or electron beams, and then carrying out a penetration test; repeating the step five;
step eight: injecting oil into a closed cavity in the sealing pipe seat (7) for oil sealing;
step eight one: the isolating medium (8) is injected into a closed cavity in a sealed tube seat (7) by adopting a BYS-II type double-chamber liquid sealing device, and the vacuum degree is less than 10-9Pa, the isolation medium (8) is inert organic liquid;
step eight two: sealing a medium injection hole (602) with the diameter of 1.3mm by using a phi 2 steel ball, and then sealing and welding the medium injection hole (602) filled with the isolation medium (8) by adopting energy storage welding;
thus, the packaging of the resonant pressure sensitive chip probe of the isolation packaging structure is completed;
step nine: electrically testing the resonance pressure sensitive chip probe of the packaged isolation packaging structure;
the electrical test is carried out under the constant normal pressure condition, and when the resonance pressure sensitive chip probe does not generate the frequency hopping phenomenon and the frequency changes towards one direction, the resonance pressure sensitive chip probe is stable and qualified within the time of less than 3 seconds;
step ten: carrying out pressure fatigue and aging tests on the resonant pressure sensitive chip probe of the packaged isolation packaging structure;
the resonance pressure sensitive chip probe is arranged on a clamp and is connected with an air pressure fatigue machine or a hydraulic fatigue machine, the fatigue times are 5000/10000 times, and the resonance pressure sensitive chip probe is placed in a high-low temperature test box for temperature aging tests to release the internal stress of the resonance pressure sensitive chip probe together, so that the output stability of the resonance pressure sensitive chip of the isolation packaging structure is improved;
step eleven: performing air tightness detection on a resonance pressure sensitive chip probe of the packaged isolation packaging structure;
connecting the resonance pressure sensitive chip probe with a pressure controller, and carrying out air tightness detection, wherein the pressure change value is not more than +/-2 Pa, and at the moment, the air tightness of the resonance pressure sensitive chip probe is qualified;
step twelve: and carrying out laser marking and screening on the resonance pressure sensitive chip probe of the packaged isolation packaging structure, and switching to the next production stage.
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