CN113690311B - GaN HEMT device integrated with flywheel diode - Google Patents
GaN HEMT device integrated with flywheel diode Download PDFInfo
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- CN113690311B CN113690311B CN202111000737.XA CN202111000737A CN113690311B CN 113690311 B CN113690311 B CN 113690311B CN 202111000737 A CN202111000737 A CN 202111000737A CN 113690311 B CN113690311 B CN 113690311B
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- 230000004888 barrier function Effects 0.000 claims abstract description 44
- 239000004020 conductor Substances 0.000 claims description 82
- 238000002161 passivation Methods 0.000 claims description 14
- 239000000758 substrate Substances 0.000 claims description 3
- 239000004065 semiconductor Substances 0.000 abstract description 8
- 230000005533 two-dimensional electron gas Effects 0.000 abstract description 7
- 230000009286 beneficial effect Effects 0.000 abstract description 5
- 239000002184 metal Substances 0.000 abstract description 4
- 230000003071 parasitic effect Effects 0.000 abstract description 3
- 230000002708 enhancing effect Effects 0.000 abstract description 2
- FFEARJCKVFRZRR-UHFFFAOYSA-N methionine Chemical compound CSCCC(N)C(O)=O FFEARJCKVFRZRR-UHFFFAOYSA-N 0.000 abstract description 2
- 239000000463 material Substances 0.000 description 5
- 230000015556 catabolic process Effects 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 241001354791 Baliga Species 0.000 description 1
- 230000001419 dependent effect Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7786—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with direct single heterostructure, i.e. with wide bandgap layer formed on top of active layer, e.g. direct single heterostructure MIS-like HEMT
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Abstract
The invention belongs to the technical field of power semiconductors, and relates to a GaN HMET device integrated with a flywheel diode. The invention is mainly characterized in that: when the device is turned on in the forward direction, the Schottky diode is in an off state, on one hand, the two-dimensional electron gas of the anode region is exhausted by utilizing the work function difference between the Schottky metal and the semiconductor, and on the other hand, the leakage current of the Schottky diode when the Schottky diode is turned off is reduced by utilizing the dielectric layer reserved in the anode region; when the device is in reverse follow current, the side wall of the Schottky anode is in direct contact with two-dimensional electron gas (2 DEG), so that the reverse conduction loss is reduced; the insulated gate structure allows the device to realize an enhanced HEMT under the condition of thicker barrier layers, thereby being beneficial to reducing forward on-resistance and enhancing the gate control capability of the device; the integrated Schottky diode and GaN HEMT share the drift region at the drain side, and compared with a parallel diode, the integrated Schottky diode and GaN HEMT realize follow current, thereby being beneficial to reducing the area and parasitic parameters of the device and reducing the on-resistance during forward conduction and reverse conduction.
Description
Technical Field
The invention belongs to the technical field of power semiconductors, and relates to a GaN HEMT device integrated with a flywheel diode.
Background
Compared with the first generation of semiconductor material Si, the third generation of wide band gap semiconductor material GaN has more excellent physical properties of the material, and the physical parameters such as the band gap, the electron mobility, the electron saturation rate, the critical breakdown electric field, the thermal conductivity, the high/low frequency Baliga figure of merit and the like are far higher than those of the Si material. Currently, P-GaN gate power HEMTs have been commercialized and have excellent performance.
However, since the P-GaN gate power HEMT has no body diode, the reverse turn-on voltage of the HEMT depends on the threshold voltage (V th ) And an off-state gate bias voltage (V) GS ). In many power switching circuits, such as inverters and DC-DC converters, the power transistor is typically anti-parallel with a freewheeling diode so as not to interfere with the inductive load current when the transistor is not yet conducting, in which case the circuit achieves reverse current conduction through the freewheeling diode. However, the deployment of external diodes not only increases cost, but also introduces additional parasitic inductance and capacitance. Another solution to this problem is to integrate a planar schottky diode on the HEMT, but the main disadvantage of this approach is that the reverse leakage current of the planar schottky diode is large, possibly several orders of magnitude higher than the leakage current in the off state of the HEMT.
In addition, P-GaN gate devices have a trade-off between achieving normally-off functionality and low on-resistance. On the one hand, this is due to the thinner barrier layer required for the two-dimensional electron gas (2 DEG) in the P-GaN depletion channel, which increases the on-resistance. On the other hand, it is impossible to fully restore the conductivity of the channel under the P-GaN gate by applying a positive gate bias voltage, resulting in the P-GaN region still having a lower conductivity than the other regions of the channel. Therefore, to reduce on-resistance, shorter P-GaN and thicker barrier layers are required. However, this makes it difficult to realize the normally-off function of the device. The tri-gate structure forms a fin structure by etching the area below the gate, and utilizes the work function difference between the gate metal and the semiconductor to exhaust the two-dimensional electron gas of the gate area, so that the positive threshold voltage of the device is realized, and meanwhile, a thick barrier layer is still used in the drift area, so that the on-resistance is kept low in the unetched area. However, the mere reliance on tri-gate structures to achieve a positive threshold voltage of the device requires the fin structure to be very small in width, which makes implementation of the process difficult.
Disclosure of Invention
The invention provides a GaN HEMT device integrating a flywheel diode based on the application requirement of the HEMT device;
the technical scheme of the invention is as follows:
a GaN HEMT device integrating a flywheel diode comprises a substrate layer 1, a GaN buffer layer 2, a GaN channel layer 3, a barrier layer 4 and a passivation layer 5 which are sequentially stacked from bottom to top along the vertical direction of the device;
the two ends above the device are respectively provided with a first conductive material 6 and a source end structure; the first conductive material 6 penetrates through the passivation layer 5 and extends into the upper layer of the barrier layer 4, and the upper surface of the first conductive material 6 is led out of the drain electrode and simultaneously serves as a cathode of the integrated flywheel diode;
defining the direction of the source end structure of the device pointing to the first conductive material 6 as a device transverse direction, and defining the direction vertical to the device transverse direction and the device vertical direction as a device longitudinal direction, wherein the source end structure sequentially comprises a first groove 9, an insulated gate structure, a second groove 10, a second conductive material 7 and a third groove 11 along the device longitudinal direction; the bottoms of the first groove 9, the second groove 10 and the third groove 11 penetrate through the barrier layer 4 and then extend into the upper layer of the GaN channel layer 3, and dielectric layers 13 are arranged at the bottoms and the side surfaces of the first groove 9, the second groove 10 and the third groove 11; the insulated gate structure comprises a P-type GaN layer 12 and a fourth conductive material 14, wherein the bottom of the P-type GaN layer 12 is in contact with the barrier layer 4, the outer surface of the P-type GaN layer 12 is wrapped by the fourth conductive material 14, the fourth conductive material 14 and the P-type GaN layer 12 are isolated by a dielectric layer 13, and the fourth conductive material 14 also extends to the bottoms of the first groove 9 and the second groove 10 along the side walls of the first groove 9 and the second groove 10; the device is also provided with a third conductive material 8 which is arranged in parallel with the P-type GaN layer 12 along the transverse direction of the device, a space is reserved between the P-type GaN layer 12 and the third conductive material 8, the P-type GaN layer 12 is positioned at one end close to the first conductive material 6, and the edges of the two ends of the P-type GaN layer 12 and the third conductive material 8 are respectively flush with the edges of the first groove 9 and the edges of the second groove 10; the second conductive material 7 is arranged above the barrier layer 4 between the second groove 10 and the third groove 11, the barrier layer 4 and the second conductive material 7 are isolated by the dielectric layer 13 at one side close to the passivation layer 5 along the transverse direction of the device, the barrier layer 4 at the other side is contacted with the second conductive material 7, the second conductive material 7 also extends to the bottoms of the second groove 10 and the third groove 11 along the side walls of the second groove 10 and the third groove 11, the second conductive material 7 contacted with the barrier layer 4 is contacted with the side walls of the second groove 10 and the third groove 11, the second conductive material 7 isolated from the barrier layer 4 by the dielectric layer 13 is isolated from the side walls of the second groove 10 and the third groove 11 by the dielectric layer 13, and the second conductive material 7 contacted with the barrier layer 4 is contacted with the GaN channel layer 3;
the upper surface of the second conductive material 7 is led out of an anode of the integrated flywheel diode, the third conductive material 8 penetrates through the passivation layer 5 and extends into the upper layer of the barrier layer 4, and the upper surface of the third conductive material is led out of a source electrode; the first conductive material 6 and the third conductive material 8 form ohmic contact with the barrier layer 4; the second conductive material 7 forms a schottky contact with the barrier layer 4 and the GaN channel layer 3.
Further, the barrier layer 4 is made of one or a combination of a plurality of AlN, alGaN, inGaN, inAlN materials;
the invention has the advantages that the higher reverse turn-on voltage is strongly dependent on the threshold voltage (V) th ) And an off-state gate bias voltage (V) GS ) The device realizes reverse freewheeling through the integrated Schottky diode; when the device is turned on in the forward direction, the Schottky diode is in an off state, on one hand, the two-dimensional electron gas of the anode region is exhausted by utilizing the work function difference between the Schottky metal and the semiconductor, and on the other hand, the leakage current of the Schottky diode when the Schottky diode is turned off is reduced by utilizing the dielectric layer reserved in the anode region; when the device is in reverse follow current, the side wall of the Schottky anode is in direct contact with two-dimensional electron gas (2 DEG), so that the reverse conduction loss is reduced; insulated gate structures allow devices with thicker barrier layersThe enhancement type HEMT is realized, which is beneficial to reducing the forward on resistance and enhancing the gate control capability of the device; the integrated Schottky diode and the GaN HEMT share the drift region at one side of the drain electrode, compared with a scheme of parallel diodes for realizing follow current, the integrated Schottky diode and the GaN HEMT are beneficial to reducing the area and parasitic parameters of the device and reducing the on-resistance in forward conduction and reverse conduction;
drawings
FIG. 1 is a schematic three-dimensional structure of example 1;
FIG. 2 is a top view of the structure of example 1;
FIG. 3 is a cross-sectional view of the structure of example 1 taken along line AA';
FIG. 4 is a cross-sectional view of the structure of example 1 taken along BB';
FIG. 5 is a cross-sectional view of the structure of example 1 taken along CC';
FIG. 6 is a cross-sectional view of the structure of example 1 taken along DD';
FIG. 7 is a schematic view of the three-dimensional structure of example 2;
Detailed Description
The technical scheme of the invention is described in detail below with reference to the accompanying drawings and examples:
example 1
As shown in fig. 1, the HEMT device of the present example includes a substrate layer 1, a GaN buffer layer 2, a GaN channel layer 3, a barrier layer 4, and a passivation layer 5, which are sequentially stacked from bottom to top in a vertical direction of the device;
the two ends above the device are respectively provided with a first conductive material 6 and a source end structure; the first conductive material 6 penetrates through the passivation layer 5 and extends into the upper layer of the barrier layer 4, and the upper surface of the first conductive material 6 is led out of the drain electrode and simultaneously serves as a cathode of the integrated flywheel diode;
defining the direction of the source end structure of the device pointing to the first conductive material 6 as a device transverse direction, and defining the direction vertical to the device transverse direction and the device vertical direction as a device longitudinal direction, wherein the source end structure sequentially comprises a first groove 9, an insulated gate structure, a second groove 10, a second conductive material 7 and a third groove 11 along the device longitudinal direction; the bottoms of the first groove 9, the second groove 10 and the third groove 11 penetrate through the barrier layer 4 and then extend into the upper layer of the GaN channel layer 3, and dielectric layers 13 are arranged at the bottoms and the side surfaces of the first groove 9, the second groove 10 and the third groove 11; the insulated gate structure comprises a P-type GaN layer 12 and a fourth conductive material 14, wherein the bottom of the P-type GaN layer 12 is in contact with the barrier layer 4, the outer surface of the P-type GaN layer 12 is wrapped by the fourth conductive material 14, the fourth conductive material 14 and the P-type GaN layer 12 are isolated by a dielectric layer 13, and the fourth conductive material 14 also extends to the bottoms of the first groove 9 and the second groove 10 along the side walls of the first groove 9 and the second groove 10; the device is also provided with a third conductive material 8 which is arranged in parallel with the P-type GaN layer 12 along the transverse direction of the device, a space is reserved between the P-type GaN layer 12 and the third conductive material 8, the P-type GaN layer 12 is positioned at one end close to the first conductive material 6, and the edges of the two ends of the P-type GaN layer 12 and the third conductive material 8 are respectively flush with the edges of the first groove 9 and the edges of the second groove 10; a second conductive material 7 is arranged above the barrier layer 4 between the second groove 10 and the third groove 11, the barrier layer 4 and the second conductive material 7 are separated by a dielectric layer 13 at one side close to the passivation layer 5 along the transverse direction of the device, the barrier layer 4 at the other side is contacted with the second conductive material 7, the second conductive material 7 also extends to the bottoms of the second groove 10 and the third groove 11 along the side walls of the second groove 10 and the third groove 11, and the second conductive material 7 contacted with the barrier layer 4 is contacted with the side walls of the second groove 10 and the third groove 11;
the upper surface of the second conductive material 7 is led out of an anode of the integrated flywheel diode, the third conductive material 8 penetrates through the passivation layer 5 and extends into the upper layer of the barrier layer 4, and the upper surface of the third conductive material is led out of a source electrode; the first conductive material 6 and the third conductive material 8 form ohmic contact with the barrier layer 4; the second conductive material 7 forms a schottky contact with the barrier layer 4 and the GaN channel layer 3.
The working mechanism of this example: when the voltages of the grid electrode, the source electrode and the Schottky anode are 0V and a certain positive voltage is applied to the drain electrode, the two-dimensional electron gas in the area below the grid electrode is exhausted by the P-GaN and the work function difference between the grid electrode metal and the semiconductor, and the HEMT and the Schottky diode are in an off state; when the voltage of the grid electrode and the drain electrode is 0V and a certain positive voltage is applied to the Schottky anode, the Schottky diode is in a conducting state;
the GaN HMET integrated with the flywheel diode has low-loss reverse conduction capacity and low leakage current; the invention has the advantages of high threshold voltage, small on-resistance, high switching speed and the like.
Example 2
The difference between this example and embodiment 1 is that the fourth conductive material 14 in this example extends to the first conductive material 6 side along the device lateral direction and covers the passivation layer 5 to form the gate field plate 15, and the gate field plate 15 has a distance from the first conductive material 6; compared with embodiment 1, the advantage of this embodiment is that the gate field plate 15 further optimizes the electric field distribution of the device in withstand voltage, which is beneficial to improving the breakdown voltage of the device.
Claims (3)
1. A GaN HEMT device integrating a flywheel diode comprises a substrate layer (1), a GaN buffer layer (2), a GaN channel layer (3), a barrier layer (4) and a passivation layer (5) which are sequentially stacked from bottom to top along the vertical direction of the device;
the device is characterized in that the two ends above the device are respectively provided with a first conductive material (6) and a source end structure; the first conductive material (6) penetrates through the passivation layer (5) and extends into the upper layer of the barrier layer (4), and the upper surface of the first conductive material (6) is led out of the drain electrode and is used as the cathode of the integrated flywheel diode;
defining a direction of a source end structure of the device pointing to the first conductive material (6) as a device transverse direction, and defining a direction which is perpendicular to the device transverse direction and the device vertical direction as a device longitudinal direction, wherein the source end structure sequentially comprises a first groove (9), an insulated gate structure, a second groove (10), a second conductive material (7) and a third groove (11) along the device longitudinal direction; the bottoms of the first groove (9), the second groove (10) and the third groove (11) penetrate through the barrier layer (4) and then extend into the upper layer of the GaN channel layer (3), and dielectric layers (13) are arranged at the bottoms and the side surfaces of the first groove (9), the second groove (10) and the third groove (11); the insulated gate structure comprises a P-type GaN layer (12) and a fourth conductive material (14), wherein the bottom of the P-type GaN layer (12) is in contact with the upper surface of the barrier layer (4), the outer surface of the P-type GaN layer (12) is wrapped by the fourth conductive material (14), the fourth conductive material (14) is isolated from the P-type GaN layer (12) through a dielectric layer (13), and the fourth conductive material (14) also extends to the bottoms of the first groove (9) and the second groove (10) along the side walls of the first groove (9) and the second groove (10); the device is also provided with a third conductive material (8) which is arranged in parallel with the P-type GaN layer (12) along the transverse direction of the device, a space is reserved between the P-type GaN layer (12) and the third conductive material (8), the P-type GaN layer (12) is positioned at one end close to the first conductive material (6), and the edges of the two ends of the P-type GaN layer (12) and the third conductive material (8) are respectively flush with the edges of the first groove (9) and the edges of the second groove (10); a second conductive material (7) is arranged above the barrier layer (4) between the second groove (10) and the third groove (11), the barrier layer (4) and the second conductive material (7) are isolated by a dielectric layer (13) at one side close to the passivation layer (5) along the transverse direction of the device, the barrier layer (4) at the other side is contacted with the second conductive material (7), the second conductive material (7) also extends to the bottoms of the second groove (10) and the third groove (11) along the side walls of the second groove (10) and the third groove (11), the second conductive material (7) contacted with the barrier layer (4) is contacted with the side walls of the second groove (10) and the third groove (11), and meanwhile, the second conductive material (7) isolated from the barrier layer (4) by the dielectric layer (13) is also isolated by the dielectric layer (13), and the second conductive material (7) contacted with the barrier layer (4) is contacted with the GaN channel layer (3);
the upper surface of the second conductive material (7) is led out of the anode of the integrated freewheeling diode; the third conductive material (8) penetrates through the passivation layer (5) and extends into the upper layer of the barrier layer (4), and the upper surface of the third conductive material is led out of the source electrode; the first conductive material (6) and the third conductive material (8) form ohmic contact with the barrier layer (4); the second conductive material (7) forms a Schottky contact with the barrier layer (4) and the GaN channel layer (3).
2. A GaN HEMT device integrated with a free-wheeling diode according to claim 1, characterized in that the fourth conductive material (14) extends in the lateral direction of the device to the side of the first conductive material (6) and covers part of the passivation layer (5), forming a gate field plate (15), and that the gate field plate (15) is spaced from the first conductive material (6).
3. A GaN HEMT device integrating a flywheel diode according to claim 1 or 2, characterized in that the barrier layer (4) is made of one or a combination of several of AlN, alGaN, inGaN, inAlN.
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| CN114447103B (en) * | 2022-01-26 | 2023-04-25 | 电子科技大学 | GaN RC-HEMT with reverse conduction capability |
| CN116598310B (en) * | 2023-07-17 | 2023-11-14 | 河源市众拓光电科技有限公司 | GaN-based wide-input-power-range rectifying chip, manufacturing method thereof and rectifier |
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