CN113690310A - LIGBT, preparation method, intelligent power module, driving circuit and electric appliance - Google Patents

LIGBT, preparation method, intelligent power module, driving circuit and electric appliance Download PDF

Info

Publication number
CN113690310A
CN113690310A CN202110797830.1A CN202110797830A CN113690310A CN 113690310 A CN113690310 A CN 113690310A CN 202110797830 A CN202110797830 A CN 202110797830A CN 113690310 A CN113690310 A CN 113690310A
Authority
CN
China
Prior art keywords
region
doping
doped region
bipolar transistor
ligbt
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN202110797830.1A
Other languages
Chinese (zh)
Inventor
兰昊
刘海清
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Midea Group Co Ltd
Guangdong Midea White Goods Technology Innovation Center Co Ltd
Original Assignee
Midea Group Co Ltd
Guangdong Midea White Goods Technology Innovation Center Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Midea Group Co Ltd, Guangdong Midea White Goods Technology Innovation Center Co Ltd filed Critical Midea Group Co Ltd
Priority to CN202110797830.1A priority Critical patent/CN113690310A/en
Publication of CN113690310A publication Critical patent/CN113690310A/en
Pending legal-status Critical Current

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/70—Bipolar devices
    • H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
    • H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
    • H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/0684—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape, relative sizes or dispositions of the semiconductor regions or junctions between the regions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66234—Bipolar junction transistors [BJT]
    • H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters

Abstract

The invention discloses a transverse insulated gate bipolar transistor, a preparation method, an intelligent power module and a driving resistor electric appliance, wherein an anode structure of the transverse insulated gate bipolar transistor is designed, and a MOSFET is formed by arranging a second doped region, a fourth doped region and a second gate structure; when the transverse insulated gate bipolar transistor is conducted, the MOSFET is in a closed state, namely the second gate structure cuts off a carrier channel between the drift region and the fourth doped region, so that a snapback phenomenon in the transverse insulated gate bipolar transistor can be avoided, and the reliability of a device is improved; when the transverse insulated gate bipolar transistor is turned off, the second gate structure opens a carrier channel between the drift region and the fourth doped region to form a carrier extraction channel, so that the turn-off of the transverse insulated gate bipolar transistor can be accelerated, and the off-state loss of the transverse insulated gate bipolar transistor is reduced.

Description

LIGBT, preparation method, intelligent power module, driving circuit and electric appliance
Technical Field
The invention relates to the field of power semiconductor devices, in particular to an LIGBT, a preparation method, an intelligent power module, a driving circuit and an electric appliance.
Background
Lateral Insulated Gate Bipolar Transistor (LIGBT) has the advantages of easy integration, high input impedance, reduced on-state voltage, etc., and has been widely used in the fields of communication, traffic, energy, household appliances, etc.
The traditional LIGBT device has obvious charge storage effect in the turn-off process, which causes larger turn-off loss; on the basis of a traditional LIGBT device, an anode short-circuit structure N + electrode is introduced into an anode of an anode short-circuit type transverse Insulated Gate Bipolar Transistor (SA-LIGBT), so that on one hand, the injection efficiency of a P + region is reduced in the conduction process of the LIGBT device, and therefore holes accumulated in a base region in a steady state are reduced, and on the other hand, an extraction channel is provided for a current carrier in the turn-off process, so that the turn-off speed is increased, and the turn-off loss of the LIGBT device is reduced. However, the introduction of the anode short-circuit structure also causes snapback phenomenon of the LIGBT device, which affects the reliability of the device, and the off-state loss of the existing LIGBT is still high.
That is, the current LIGBT device has the problems of high off-state loss and device reliability caused by snapback effect.
Disclosure of Invention
In view of the above, the present invention has been made to provide a LIGBT, a manufacturing method, a smart power module, a driving circuit and an electrical appliance that overcome or at least partially solve the above problems.
In a first aspect, a LIGBT is provided, which includes a substrate, a drift region and an electrode structure sequentially arranged from bottom to top, wherein the drift region is provided with a first doped region and a second doped region;
a third doped region is arranged in the first doped region, and a fourth doped region is arranged in the second doped region; the doping types of the drift region, the third doping region and the fourth doping region are all the first doping type; the doping types of the first doping area and the second doping area are both the second doping type; the first doping type is different from the second doping type;
the electrode structure includes: the second doped region is arranged on the second side of the second substrate, the third doped region is arranged on the third doped region, the first doped region is arranged on the second doped region, the second doped region is arranged on the third doped region, the third doped region is arranged on the third doped region, the fourth doped region is arranged on the fourth doped region, and the third doped region is arranged on the third doped region.
Optionally, the doping concentration of the first doping region on the side far away from the second doping region is higher than the doping concentration of the first doping region on the side near the second doping region;
the doping concentration of one side of the second doping region, which is far away from the first doping region, is higher than that of one side of the second doping region, which is close to the first doping region.
Optionally, the first doping type is N-type doping, and the second doping type is P-type doping.
Optionally, a buried oxide layer is disposed between the substrate and the drift region.
Optionally, when the LIGBT is turned on, a voltage at the second gate structure is equal to a voltage of the collector electrode to turn off a carrier channel between the third doped region and the drift region;
when the LIGBT is turned off, the voltage at the second gate structure is higher than the voltage of the collector electrode to open a carrier channel between the third doped region and the drift region to form a carrier extraction channel.
In a second aspect, a method for fabricating an LIGBT device is provided, including:
preparing a buried oxide layer on a substrate and preparing a drift region on the buried oxide layer;
forming a first doping region and a second doping region on two sides of the drift region by adopting an ion implantation method, forming a third doping region in the first doping region and forming a fourth doping region in the second doping region, wherein the doping types of the drift region, the third doping region and the fourth doping region are all the first doping type; the doping types of the first doping area and the second doping area are both second doping types; the first doping type is different from the second doping type;
forming an emitter electrode on one side of the first doped region far away from the second doped region and the third doped region; forming a first gate structure above one side of the first doped region close to the second doped region; forming a second gate structure above one side of the second doped region close to the first doped region; and forming a collector electrode on one side of the second doped region far away from the first doped region and the fourth doped region.
In a third aspect, a smart power module is provided, which includes any LIGBT provided in the first aspect.
Optionally, the smart power module further comprises a logic control circuit, the logic control circuit comprising:
the first grid structure voltage detection module is connected with the first grid structure and is used for judging the on and off of the LIGBT;
the bootstrap circuit module is connected with a voltage source and used for obtaining a voltage higher than the voltage of the collector electrode;
and the logic judgment module is connected with the first gate structure voltage detection module and the bootstrap circuit module and is used for judging whether the voltage obtained by the bootstrap circuit module is provided for the second gate structure according to the detection result of the first gate structure voltage detection module.
In a fourth aspect, a driving circuit is provided, and the air conditioner includes any one of the LIGBTs provided in the first aspect.
In a fifth aspect, an electrical appliance is provided, which includes any one of the LIGBTs provided in the first aspect.
One or more technical solutions provided in the embodiments of the present application have at least the following technical effects or advantages:
according to the method, the anode structure of the LIGBT is designed, and the second doping region, the fourth doping region and the second grid structure are arranged to form the MOSFET, so that the switch of the MOSFET can be controlled through the second grid structure, when the LIGBT is switched on, the MOSFET can be set to be in a closed state, namely the second grid structure cuts off a carrier channel between the drift region and the fourth doping region, and therefore a snapback phenomenon in the LIGBT can be avoided, and the reliability of a device is improved; when the LIGBT is turned off, the second gate structure can be arranged to open a carrier channel between the drift region and the fourth doped region to form a carrier extraction channel, so that the turn-off of the LIGBT can be accelerated, and the off-state loss of the LIGBT is reduced.
The foregoing description is only an overview of the technical solutions of the present invention, and the embodiments of the present invention are described below in order to make the technical means of the present invention more clearly understood and to make the above and other objects, features, and advantages of the present invention more clearly understandable.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:
fig. 1 is a schematic view of an LIGBT structure provided in an embodiment of the present invention;
fig. 2 is a schematic diagram of a specific LIGBT structure based on fig. 1 provided in an embodiment of the present application;
fig. 3 is a flowchart of a method for fabricating an LIGBT device provided in an embodiment of the present application;
FIG. 4 is a schematic diagram of a smart power module provided in an embodiment of the present application;
FIG. 5 is a schematic diagram of a logic control circuit provided in an embodiment of the present application;
FIG. 6 is a schematic diagram of a driving circuit provided in an embodiment of the present application;
fig. 7 is a schematic diagram of an electrical appliance provided in an embodiment of the present application.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
It is to be understood that the terminology used herein is for the purpose of describing particular example embodiments only and is not intended to be limiting. As used herein, the singular forms "a", "an" and "the" may be intended to include the plural forms as well, unless the context clearly indicates otherwise. The terms "comprising," "including," and "having" are inclusive and therefore specify the presence of stated features, elements, and/or components, but do not preclude the presence or addition of one or more other features, elements, components, and/or groups thereof.
In the present invention, unless otherwise expressly stated or limited, the terms "connected," "secured," and the like are to be construed broadly, and for example, "secured" may be a fixed connection, a removable connection, or an integral part; can be mechanically or electrically connected; they may be directly connected or indirectly connected through intervening media, or they may be connected internally or in any other suitable relationship, unless expressly stated otherwise. The specific meanings of the above terms in the present invention can be understood by those skilled in the art according to specific situations.
In addition, the descriptions related to "first", "second", etc. in the present invention are only for descriptive purposes and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.
For convenience of description, spatially relative terms, such as "bottom," "front," "upper," "lower," "top," "inner," "horizontal," "outer," and the like, may be used herein to describe one element or feature's relationship to another element or feature as illustrated in the figures. This spatially relative relationship is intended to encompass different orientations of the mechanism in use or operation in addition to the orientation depicted in the figures. In addition, technical solutions between various embodiments may be combined with each other, but must be realized by a person skilled in the art, and when the technical solutions are contradictory or cannot be realized, such a combination should not be considered to exist, and is not within the protection scope of the present invention.
The invention is described below with reference to specific embodiments in conjunction with the accompanying drawings.
First, a LIGBT1000 provided by an embodiment of the present invention is described with reference to fig. 1, which includes:
the drift region 1200 is formed by a substrate 1100, a drift region 1300 and an electrode structure 1300, wherein the electrode structure 1300 is located on the drift region 1200, and the drift region 1200 is located on the substrate 1100;
two different doped regions, namely a first doped region 1400 and a second doped region 1500, are disposed on the drift region 1200; a third doped region 1600 is disposed in a predetermined region of the first doped region 1400, and a fourth doped region 1700 is disposed in a predetermined region of the second doped region 1500;
in the LIGBT provided in this embodiment, there are two different doping types in common. The doped regions with the first doping type are the drift region 1200, the third doped region 1600 and the fourth doped region 1700; the doped regions with the second doping type are the first doped region 1400 and the second doped region 1500.
The electrode structure 1300 includes four electrodes, which are an emitter electrode 1310, a first gate structure 1320, a second gate structure 1330 and a collector electrode 1340, respectively, wherein the emitter electrode 1310 is conducted with the third doped region 1600 and a side of the first doped region 1400 away from the second doped region 1500; the first gate structure 1320 is disposed above the first doped region 1400 and near the second doped region 1500; the second gate structure 1330 is disposed above a side of the second doped region 1500 close to the first doped region 1400; the collector electrode 1340 is electrically connected to the fourth doped region 1700 and to a side of the second doped region 1500 away from the first doped region 1400.
It should be noted that, an N + collector is disposed at a lower end of an anode of a typical anode short-circuit structure LIGBT, and when the LIGBT is turned off, the short-circuit structure can extract minority carriers in an N-type drift region, so as to reduce the turn-off time of the LIGBT.
When the LIGBT is conducted, electrons enter the N-type drift region through the MOS channel between the N + emitter and the N-type drift region, so that the P + collector can be attracted to inject a large number of holes into the N-type drift region, and at the moment, a large number of electron-hole pairs exist in the N-type drift region to generate a conductance modulation effect, so that the conduction resistance is greatly reduced, and the forward conduction voltage of the LIGBT is further reduced.
However, in the forward conduction process, electrons also pass through the surface channel of the N + emitter and the P body region, the N-type drift region and the N + collector to form a parasitic MOS structure, so that an electron current path is generated, a voltage rebound phenomenon (i.e., snapback effect) occurs, the reliability of the device is affected, and the application of the LIGBT is limited. Also in this configuration, the LIGBT off-state losses are still high.
The LIGBT provided by the present invention is provided with the second gate structure 1330, and the doped regions of different types are correspondingly arranged below the second gate structure 1330, so that the snapback effect does not exist, and the off-state loss of the LIGBT can be reduced.
Specifically, when the LIGBT is turned on, the carrier channel between the fourth doped region 1700 and the drift region 1200 can be turned off by setting the voltage on the second gate structure 1330 to be equal to the voltage on the collector electrode 1340, so that the current path between the third doped region 1600, the first doped region 1400, the drift region 1200 and the fourth doped region 1700 is cut off, and thus the snapback effect is not generated in the LIGBT; when the LIGBT is turned off, the voltage applied to the second gate structure 1330 is controlled to be higher than the voltage applied to the collector electrode 1340, so that a carrier channel between the fourth doped region 1700 and the drift region 1200 can be opened, and minority carriers in the drift region 1200 are pumped away, thereby reducing the turn-off time of the LIGBT and further achieving the technical effect of reducing the turn-off loss of the device.
In some embodiments, different regions in the first doped region 1400 and the second doped region 1500 have different doping concentrations, so that when the LIGBT device is turned on in the forward direction, a larger number of carriers can be generated, thereby reducing the forward turn-on voltage of the LIGBT.
Specifically, there may be two regions of different doping concentrations in the first doping region 1400, wherein the doping concentration of carriers at the side of the doping region relatively farther from the second doping region is higher than the doping concentration of carriers at the side of the doping region relatively closer to the second doping region; the doping concentration of the two sides in the second doping region 1500 is also different, wherein the doping concentration of the side close to the first doping region 1400 is lower than the doping concentration of the side far from the first doping region 1400.
Furthermore, in the first doped region 1400, a side far from the second doped region 1500 is heavily doped, and a side near the second doped region 1500 is lightly doped, so that when the LIGBT is turned on, carriers in the third doped region 1600 can be accelerated to enter the drift region 1200, and on the other hand, fewer carriers from the second doped region 1500 can flow out through a region near the second doped region 1500 more smoothly; in the second doped region 1500, the region far from the first doped region 1400 is heavily doped, so that when the LIGBT device is turned on, a large number of carriers can be injected into the drift region 1200 to generate a conductance modulation effect, thereby reducing the turn-on voltage of the LIGBT; the side near the first doped region 1400 is lightly doped to form a controllable carrier channel, and when the LIGBT is turned off, the carrier extraction channel can be formed by setting the voltage of the second gate structure 1330 to accelerate the turn-off of the LIGBT device.
In addition, the third doped region 1600 and the fourth doped region 1700 are also heavily doped, so that when the LIGBT is turned on, the third doped region 1600 can inject more carriers into the drift region 1200, and when the LIGBT device is turned off, since the fourth doped region 1700 is heavily doped, the effect of extracting carriers in the drift region 1200 is better, so that the LIGBT can be turned off more quickly.
It should be noted that heavily doped means that the ratio of the concentration of dopant atoms to the concentration of semiconductor atoms is about one thousandth, while for lightly doped, the ratio of the concentration of dopant atoms to the concentration of semiconductor atoms may be as much as one part per billion.
In some embodiments, the third doped region 1600 may be specifically located at a position offset to one side of the second doped region 1500 in the middle of the first doped region 1400, so as to allow more carriers to enter the drift region 1200; the fourth doped region 1700 may be specifically located at a position in the middle of the second doped region 1500 biased to one side of the first doped region 1400, so as to extract more carriers during the LIGBT turn-off process, thereby turning off the LIGBT more quickly, and certainly, the third doped region 1600 and the fourth doped region 1700 may be located at other positions according to actual requirements, which is not limited thereto.
In some embodiments, the sizes of the third doped region 1600 and the fourth doped region 1700 may also be designed according to actual requirements, for example, if the on-resistance of the LIGBT is required to be small, the size of the third doped region 1600 may be relatively large, or the size of the fourth doped region 1700 may be relatively small, and the sizes of the third doped region 1600 and the fourth doped region 1700 are not particularly limited.
An electrode structure 1300 including a first gate structure 1320, a second gate structure 1330, an emitter electrode 1310, and a collector electrode 1340 is disposed on the drift region 1200. The emitter electrode 1310 is disposed above the third doped region 1600 and the region of the first doped region 1400 away from the second doped region 1500, and the emitter electrode 1310 is disposed above the third doped region 1600, so that some minority carriers generated from the anode during the LIGBT conducting process can flow out of the emitter electrode 1310, thereby ensuring that the LIGBT generates a good conductance modulation effect.
The first gate structure 1320 is located above a region of the first doped region 1400 close to the second doped region 1500, and forms a MOS structure together with the third doped region 1600 and the drift region 1200 to provide a channel for carriers in the third doped region 1600 to enter the drift region 1200, or the first gate structure 1320 can also be located above the third doped region 1600 and a region of the first doped region 1400 close to the second doped region 1500 to more precisely control the channel length of the MOS structure; similarly, the second gate structure 1330 is located above a region of the second doped region 1500 close to the first doped region 1400, and forms another MOS structure with the drift region 1200 and the fourth doped region 1700 to provide a carrier extraction channel for minority carriers in the drift region 1200, or the second gate structure 1330 may also be located above a region of the second doped region 1500 close to the first doped region 1400 and the fourth doped region 1700 to better control a conduction channel of the MOS structure corresponding to the second gate structure 1330.
The collector electrode 1340 is disposed above the fourth doped region 1700 and a region of the second doped region 1500 away from the first doped region 1400, so as to drain minority carriers extracted from the drift region 1200 in addition to providing a voltage to the LIGBT.
In some embodiments, the first gate structure 1320 and the second gate structure 1330 are further located on a gate oxide layer on the drift region 1200, and the gate oxide layer may specifically use silicon dioxide, polysilicon, etc., without limitation. More specifically, the first gate structure 1320 and the second gate structure 1330 may be located on the same gate oxide layer, so as to simplify the LIGBT manufacturing process and save the process time. The electrode material may be specifically a conductive metal such as magnesium, aluminum, titanium, vanadium, chromium, manganese, nickel, copper, zinc, gallium, molybdenum, lead, silver, tungsten, platinum, gold, or an alloy of these conductive metals.
In some embodiments, a buried oxide layer 1800 is disposed on the substrate 1100 and below the drift region 1200, i.e., in between, to completely isolate the drift region 1200 from the substrate 1100, prevent substrate current leakage and withstand the vertical voltage of the LIGBT device. The material of the buried oxide layer 1800 may be, but is not limited to, silicon dioxide, polysilicon, etc. implanted with oxygen.
In some embodiments, the first doping type may be a doping such that the doped region is an N-type semiconductor, e.g., the dopant ions are phosphorous, arsenic, antimony, bismuth, etc., and the second doping type may be a doping such that the doped region is a P-type semiconductor, e.g., the dopant ions are boron, indium, etc. The LIGBT can be divided into N-type channel LIGBT and P-type channel LIGBT according to channel type, the N-type channel LIGBT has electrons flowing in the conducting process, the P-type channel LIGBT uses holes in the conducting process, because the mobility of electrons is generally three times of that of holes, the working efficiency of the N-type channel LIGBT is higher than that of the P-type channel LIGBT, and the application is wider than that of the P-type channel LIGBT. In a specific implementation process, the type of LIGBT can be selected according to actual needs, and in the embodiment of the present invention, an N-type channel LIGBT is taken as an example for description.
As shown in fig. 2, the substrate 1100 is a P-type substrate, the drift region 1200 is an N-drift region, and a buried oxide layer 1800 is disposed on the substrate 1100 to isolate the substrate 1100 from the drift region 1200, thereby preventing substrate current leakage.
A first doped region 1400 is disposed on the N-drift region 1200, and the doping type thereof is P-type. More specifically, two regions with different doping concentrations are disposed inside the first doping region 1400, wherein the doping concentration of one side 1410 near the second doping region 1500 is lower than that of the remaining region 1420 in the first doping region 1400, in the N-type LIGBT, the region 1420 is called a P + body region, and the region 1410 is called a P body region; the third doped region 1600 is located between the P + body regions 1420 and the P body regions 1410, and is heavily doped N-type, referred to as an N + emitter.
A second doped region 1500, which is also P-type, is disposed on the N-drift region 1200 opposite to the first doped region 1400. Different regions of the second doped region 1500 also have different doping concentrations, wherein a side 1520 remote from the first doped region 1400 has a higher doping concentration than the remaining regions of the second doped region 1500, and a fourth doped region 1700 is provided between the region 1510 and the region 1520, the doping type of which is heavily doped N-type, referred to as N + collector, while the region 1510 is referred to as P-collector doped region and the region 1520 is referred to as P + collector.
An electrode structure 1300 is also disposed over the N-drift region 1200. Wherein the first gate structure 1320 is disposed on the N + emitter 1600 and the P body region 1410, and the second gate structure 1330 is disposed above the N + collector 1700 and the P-collector doped region 1510, and more specifically, the first gate structure 1320 and the second gate structure 1330 are disposed on the oxide layer 1350. While an emitter electrode 1310 is disposed on the P + body region 1420 and the N + emitter 1600 and a collector electrode 1340 is disposed on the P + collector 1520 and the N + collector 1700.
The working principle of the LIGBT device is described in detail below with reference to fig. 2:
in fig. 2, the P + collector 1520, N-drift region 1200 and P body region 1410 form a horizontal PNP bipolar transistor; the N + emitter 1600, the P body region 1410, and the N-drift region 1200 form a vertical NPN bipolar transistor; the N + emitter 1600, the first gate structure 1320, and the N-drift region 1200 form an NMOS structure, which may be referred to as a cathode NMOS structure; the N + collector 1700, the second gate structure 1330, and the N-drift region 1200 form another NMOS structure, which may be referred to as an anode NMOS structure.
When a sufficient forward bias is applied to the first gate structure 1320 and a certain forward bias is applied to the collector electrode 1340 and the second gate structure 1330 (at this time, the voltage of the second gate structure 1330 is set to be equal to that of the collector electrode 1340), electrons from the N + emitter 1600 pass through the cathode NMOS structure into the drift region 1200 and accumulate at the PN junction boundary of the horizontal PNP bipolar transistor, lowering the potential at the N region side of the PN junction, when the voltage across the PN junction is greater than the turn-on voltage, the P + collector 1520 injects holes into the drift region 1200, the horizontal PNP bipolar transistor is in the on state, that is, the LIGBT starts to turn on, during this process, because the voltage at the second gate structure 1330 does not reach the turn-on voltage, the anode NMOS structure is in the off state, thereby cutting off the electron current path between the N + emitter 1600, the P body region 1410, the drift region, and the P + collector 1520, therefore, the LIGBT cannot generate snapback phenomenon;
when the LIGBT is turned off, the voltage applied to the second gate structure 1330 is set to be higher than the voltage applied to the collector electrode 1340, so that the anode NMOS structure is turned on, that is, at this time, the second gate structure 1330 can open the carrier channel between the N + collector electrode 1700 and the N-drift region 1200, and extract the carriers in the N-drift region 1200, thereby accelerating the turn-off process of the LIGBT and reducing the turn-off loss of the LIGBT.
That is to say, the LIGBT provided in the embodiment of the present invention does not have snapback phenomenon when the LIGBT is turned on, and on the other hand, can reduce turn-off loss of the LIGBT when the LIGBT is turned off.
Next, a method for preparing LIGBT according to an embodiment of the present invention is described with reference to fig. 1 and fig. 3, including:
step S301, an epitaxial layer with a certain thickness is fabricated on the substrate 1100, and ion implantation is performed on the epitaxial layer to fabricate the drift region 1200;
step S302, forming a first doped region 1400 and a second doped region 1500 on two sides of the drift region 1200 respectively by using an ion implantation method; forming a third doped region 1600 in the first doped region 1400 and forming a fourth doped region 1700 in the second doped region 1500, wherein the third doped region 1600, the fourth doped region 1700 and the drift region 1200 all adopt the first doping type; the doping types of the first doping region 1400 and the second doping region 1500 are the same, and both adopt the second doping type; the first doping type and the second doping type are two different doping types;
in step S303, an electrode structure is further formed on the device formed in step S302, including forming an emitter electrode 1310, a first gate structure 1320, a second gate structure 1330, and a collector electrode 1340.
Wherein, the emitter electrode 1310 is formed above the third doped region 1600 and the first doped region 1400 away from the second doped region 1500; the first gate structure 1320 is formed in the first doped region 1400 and above a region close to the second doped region 1500; the second gate structure 1330 is formed in the second doped region 1500 and over a region close to the first doped region 1400; the collector electrode 1340 is formed over the fourth doped region 1700 and the side of the second doped region 1500 away from the first doped region 1400.
In an alternative embodiment, the first doping type is N-type doping, and the second doping type is P-type doping, wherein the N-type doping and the P-type doping may be achieved by phosphorus ion implantation and boron ion implantation processes, respectively. In addition, when the first doped region 1400 and the second doped region 1500 are formed by ion implantation, different ion implantation concentrations are used in different regions of the two doped regions, so that a larger number of carriers can be generated when the LIGBT is turned on in the forward direction, thereby reducing the forward turn-on voltage of the LIGBT.
The LIGBT preparation method provided by this embodiment does not introduce additional process steps, and is completely compatible with the conventional preparation method.
Next, an Intelligent Power Module (IPM) provided by an embodiment of the present invention, including the LIGBT1000 provided by an embodiment of the present invention, is described with reference to fig. 4.
IPM is an advanced power switch device, which is essentially a power driving type product integrating a power device and a power device driving circuit. The IPM is widely applied to the fields of variable frequency speed regulation of alternating current motors, chopper speed regulation of direct current motors, various high-performance power supplies, industrial electrical automation, new energy and the like, and has a wide market.
In some embodiments, the smart power module 4000 further comprises a logic control circuit 4001, and the logic control circuit 4001 is mainly used for providing an additional voltage to the second gate structure 1330 of the LIGBT according to the on/off state of the LIGBT.
With reference to fig. 5, the logic control circuit 4001 further includes a bootstrap circuit block 5002, a first gate structure voltage detection block 5001 and a logic decision block 5003.
The bootstrap circuit block 5002 is connected to a voltage source, and can obtain a voltage higher than the voltage applied to the collector electrode; specifically, the first gate structure voltage detection module 5001 mainly comprises threshold voltage comparison logic and first gate structure voltage variation trend logic, so as to accurately determine the on-off state of the LIGBT in real time; the first gate structure voltage detection module 5001 and the bootstrap circuit module 5002 are respectively connected to the logic determination module 5003, so that the logic determination module 5003 can determine whether to provide the voltage generated by the bootstrap circuit module 5002 to the second gate structure 1330 according to the detection result of the first gate structure voltage detection module 5001.
That is, when the first gate structure voltage detection module 5001 detects that the LIGBT is turned on, the signal is transmitted to the logic determination module 5003, and the logic determination module 5003 controls the voltage obtained by the bootstrap circuit module 5002 not to be provided to the second gate structure 1330, at this time, the voltage at the second gate structure 1330 is equal to the voltage at the collector electrode 1340, and the carrier channel between the drift region 1200 and the fourth doped region 1700 in the LIGBT is turned off, so that the voltage jump phenomenon is avoided, the reliability of the LIGBT is ensured, and the reliability of the IPM is ensured;
when the first gate structure voltage detection module 5001 detects that the LIGBT is turned off, the logic determination module 5003 receives a LIGBT turn-off signal sent from the first gate structure voltage detection module 5001, and controls to provide the second gate structure 1330 with the voltage obtained by the bootstrap circuit module 5002, at this time, the voltage at the second gate structure 1330 is higher than the voltage at the collector electrode 1340, the second gate structure 1330 opens a carrier channel between the drift region 1200 and the fourth doped region 1700, and minority carriers in the drift region 1200 are extracted to the fourth doped region 1700 through the carrier channel, so that the turn-off of the LIGBT is accelerated, and the turn-off loss of the IPM is reduced.
Next, a driving circuit 6000 provided by an embodiment of the present invention is described with reference to fig. 6, including: such as LIGBT1000 according to any of the above embodiments of the present invention.
Since the LIGBT provided by the present embodiment has no snapback effect and low off-state loss, the power loss of the drive circuit equipped with the LIGBT is also reduced synchronously.
Next, an electrical apparatus 7000 provided in an embodiment of the present invention is described with reference to fig. 7, including: such as LIGBT1000 according to any of the above embodiments of the present invention. The electrical apparatus 7000 may be an air conditioner, an ac motor, a dc motor, and various high performance Power supplies such as a UPS (Uninterruptible Power System), an electric welding machine, an induction heater, etc., and as long as the LIGBT includes the embodiments of the present invention, all of which fall within the intended scope of the present invention.
By assembling the LIGBT provided by the embodiment in the electric appliance, the power loss of the electric appliance is reduced, the heat dissipation effect of the electric appliance is improved, and the reliability of the electric appliance is improved.
While preferred embodiments of the present invention have been described, additional variations and modifications in those embodiments may occur to those skilled in the art once they learn of the basic inventive concepts. Therefore, it is intended that the appended claims be interpreted as including preferred embodiments and all such alterations and modifications as fall within the scope of the invention.
It will be apparent to those skilled in the art that various changes and modifications may be made in the present invention without departing from the spirit and scope of the invention. Thus, if such modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include such modifications and variations.

Claims (10)

1. A transverse insulated gate bipolar transistor is characterized by comprising a substrate, a drift region and an electrode structure which are sequentially arranged from bottom to top, wherein the drift region is provided with a first doped region and a second doped region;
a third doped region is arranged in the first doped region, and a fourth doped region is arranged in the second doped region; the doping types of the drift region, the third doping region and the fourth doping region are all first doping types; the doping types of the first doping area and the second doping area are both second doping types; the first doping type is different from the second doping type;
the electrode structure includes: the second doped region is arranged on the second side of the second substrate, the third doped region is arranged on the third doped region, the first doped region is arranged on the second doped region, the second doped region is arranged on the third doped region, the third doped region is arranged on the third doped region, the fourth doped region is arranged on the fourth doped region, and the third doped region is arranged on the third doped region.
2. The lateral insulated gate bipolar transistor of claim 1,
the doping concentration of one side of the first doping region, which is far away from the second doping region, is higher than that of one side of the first doping region, which is close to the second doping region;
the doping concentration of one side of the second doping region, which is far away from the first doping region, is higher than that of one side of the second doping region, which is close to the first doping region.
3. The lateral insulated gate bipolar transistor of claim 1, wherein the first doping type is an N-type doping and the second doping type is a P-type doping.
4. The lateral insulated gate bipolar transistor of claim 1, wherein a buried oxide layer is disposed between the substrate and the drift region.
5. The lateral insulated gate bipolar transistor of claim 1,
when the lateral insulated gate bipolar transistor is turned on, the voltage at the second gate structure is equal to the voltage of the collector electrode;
when the lateral insulated gate bipolar transistor is off, the voltage at the second gate structure is higher than the voltage of the collector electrode.
6. A preparation method of a transverse insulated gate bipolar transistor is characterized by comprising the following steps:
preparing a buried oxide layer on a substrate and preparing a drift region on the buried oxide layer;
forming a first doping region and a second doping region on two sides of the drift region, forming a third doping region in the first doping region and forming a fourth doping region in the second doping region, wherein the doping types of the drift region, the third doping region and the fourth doping region are all first doping types; the doping types of the first doping area and the second doping area are both second doping types; the first doping type is different from the second doping type;
forming an emitter electrode on one side of the first doped region far away from the second doped region and the third doped region; forming a first gate structure above one side of the first doped region close to the second doped region; forming a second gate structure above one side of the second doped region close to the first doped region; and forming a collector electrode on one side of the second doped region far away from the first doped region and the fourth doped region.
7. An intelligent power module, characterized in that it comprises a lateral insulated gate bipolar transistor according to any of claims 1 to 5.
8. The smart power module of claim 7 further comprising a logic control circuit, the logic control circuit comprising:
the first grid structure voltage detection module is connected with the first grid structure and is used for judging the on and off of the LIGBT;
the bootstrap circuit module is connected with a voltage source and used for obtaining a voltage higher than the voltage of the collector electrode;
and the logic judgment module is connected with the first gate structure voltage detection module and the bootstrap circuit module and is used for judging whether the voltage obtained by the bootstrap circuit module is provided for the second gate structure according to the detection result of the first gate structure voltage detection module.
9. A driver circuit comprising a lateral insulated gate bipolar transistor according to any of claims 1 to 5.
10. An electrical appliance comprising a lateral insulated gate bipolar transistor according to any of claims 1 to 5.
CN202110797830.1A 2021-07-14 2021-07-14 LIGBT, preparation method, intelligent power module, driving circuit and electric appliance Pending CN113690310A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110797830.1A CN113690310A (en) 2021-07-14 2021-07-14 LIGBT, preparation method, intelligent power module, driving circuit and electric appliance

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110797830.1A CN113690310A (en) 2021-07-14 2021-07-14 LIGBT, preparation method, intelligent power module, driving circuit and electric appliance

Publications (1)

Publication Number Publication Date
CN113690310A true CN113690310A (en) 2021-11-23

Family

ID=78577130

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110797830.1A Pending CN113690310A (en) 2021-07-14 2021-07-14 LIGBT, preparation method, intelligent power module, driving circuit and electric appliance

Country Status (1)

Country Link
CN (1) CN113690310A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024027574A1 (en) * 2022-08-03 2024-02-08 无锡华润上华科技有限公司 Shorted anode lateral insulated gate bipolar transistor model and modeling method therefor

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1231066A (en) * 1996-07-26 1999-10-06 艾利森电话股份有限公司 Semiconductor component with linear current-to-voltage characteristics
US5977569A (en) * 1996-09-24 1999-11-02 Allen-Bradley Company, Llc Bidirectional lateral insulated gate bipolar transistor having increased voltage blocking capability
JP2007324361A (en) * 2006-05-31 2007-12-13 Matsushita Electric Ind Co Ltd Semiconductor device and its method for manufacturing
US20080012043A1 (en) * 2006-07-14 2008-01-17 Cambridge Semiconductor Limited Semiconductor device and method of operating a semiconductor device
CN105409004A (en) * 2013-07-02 2016-03-16 剑桥微电子有限公司 Lateral power semiconductor transistors
CN112768517A (en) * 2019-11-04 2021-05-07 东南大学 Insulated gate bipolar transistor
CN213184297U (en) * 2020-09-22 2021-05-11 厦门芯一代集成电路有限公司 Planar split gate IGBT semiconductor power device with super junction structure

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1231066A (en) * 1996-07-26 1999-10-06 艾利森电话股份有限公司 Semiconductor component with linear current-to-voltage characteristics
US5977569A (en) * 1996-09-24 1999-11-02 Allen-Bradley Company, Llc Bidirectional lateral insulated gate bipolar transistor having increased voltage blocking capability
JP2007324361A (en) * 2006-05-31 2007-12-13 Matsushita Electric Ind Co Ltd Semiconductor device and its method for manufacturing
US20080012043A1 (en) * 2006-07-14 2008-01-17 Cambridge Semiconductor Limited Semiconductor device and method of operating a semiconductor device
CN105409004A (en) * 2013-07-02 2016-03-16 剑桥微电子有限公司 Lateral power semiconductor transistors
CN112768517A (en) * 2019-11-04 2021-05-07 东南大学 Insulated gate bipolar transistor
CN213184297U (en) * 2020-09-22 2021-05-11 厦门芯一代集成电路有限公司 Planar split gate IGBT semiconductor power device with super junction structure

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
黄琳华: "IGBT阳极端电势控制技术与新结构研究" *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2024027574A1 (en) * 2022-08-03 2024-02-08 无锡华润上华科技有限公司 Shorted anode lateral insulated gate bipolar transistor model and modeling method therefor

Similar Documents

Publication Publication Date Title
TWI383497B (en) Double gate insulated gate bipolar transistor
TWI624947B (en) Lateral bipolar power semiconductor transistors, lateral insulated gate bipolar transistors, methods of increasing switching speed of a lateral bipolar power semiconductor transistor and pin diodes
US7999343B2 (en) Semiconductor component with a space-saving edge termination, and method for production of such component
US9082648B2 (en) Vertical insulated-gate turn-off device having a planar gate
CN108258039B (en) Conductivity modulated drain extension MOSFET
CN114122123B (en) Silicon carbide split gate MOSFET (Metal-oxide-semiconductor field Effect transistor) integrated with high-speed freewheeling diode and preparation method
JPH09321290A (en) Semiconductor device with insulted gate bipolar transistor
CN109585540B (en) Planar gate IGBT device with carrier storage layer
CN114664929B (en) Split gate SiC MOSFET integrated with heterojunction diode and manufacturing method thereof
CN103258848B (en) Insulated gate bipolar transistor (IGBT) device with positive temperature coefficient emitter ballast resistance
CN113690309B (en) LIGBT, preparation method, intelligent power module, driving circuit and electric appliance
CN113690310A (en) LIGBT, preparation method, intelligent power module, driving circuit and electric appliance
CN110504314B (en) Groove-type insulated gate bipolar transistor and preparation method thereof
CN110473917B (en) Transverse IGBT and manufacturing method thereof
CN102157550B (en) SOI (silicon on insulator) LIGBT (lateral insulated gate bipolar transistor) device unit with p buried layer and longitudinal channel
CN110504315B (en) Groove-type insulated gate bipolar transistor and preparation method thereof
US20150349102A1 (en) Ti-igbt and formation method thereof
CN111668212B (en) Semiconductor device with a semiconductor device having a plurality of semiconductor chips
CN114784108A (en) Planar gate SiC MOSFET (silicon carbide metal oxide semiconductor field effect transistor) integrated with junction barrier Schottky diode and manufacturing method thereof
CN112018172A (en) Insulated gate bipolar transistor, intelligent power device and electronic product
CN202018966U (en) Vertical channel SOI LIGBT device unit with p buried layer
CN112310205B (en) Insulated gate bipolar transistor and manufacturing method thereof
CN103489909B (en) IGBT terminal structure with hole combination layer and preparation method thereof
EP3881360B1 (en) Insulated gate bipolar transistor
CN114784109B (en) Planar gate SiC MOSFET and manufacturing method thereof

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination