CN113690265B - LED device for communication - Google Patents

LED device for communication Download PDF

Info

Publication number
CN113690265B
CN113690265B CN202110726527.2A CN202110726527A CN113690265B CN 113690265 B CN113690265 B CN 113690265B CN 202110726527 A CN202110726527 A CN 202110726527A CN 113690265 B CN113690265 B CN 113690265B
Authority
CN
China
Prior art keywords
layer
led
electrode
core particles
gan
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN202110726527.2A
Other languages
Chinese (zh)
Other versions
CN113690265A (en
Inventor
李国强
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Heyuan Choicore Photoelectric Technology Co ltd
Original Assignee
Heyuan Choicore Photoelectric Technology Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Heyuan Choicore Photoelectric Technology Co ltd filed Critical Heyuan Choicore Photoelectric Technology Co ltd
Priority to CN202110726527.2A priority Critical patent/CN113690265B/en
Publication of CN113690265A publication Critical patent/CN113690265A/en
Application granted granted Critical
Publication of CN113690265B publication Critical patent/CN113690265B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components having potential barriers, specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/40—Materials therefor
    • H01L33/42—Transparent materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)

Abstract

The invention discloses a device of an LED for communication, which comprises a substrate, a plurality of core particles which are connected in parallel and arranged on the substrate, and a P electrode arranged on the tops of the core particles; the core particles are sequentially provided with a non-doped GaN buffer layer, an N-GaN layer, an InGaN/GaN multi-quantum well layer, a P-AlGaN electronic barrier layer and a P-GaN layer on the substrate from bottom to top; the P electrode is arranged on the upper layer of the P-GaN layer of each core particle, and the material of the P electrode is silver nanowires; the N-GaN layer is connected with N electrodes, the N electrodes of the core particles are connected through wires, and the wires are also connected with welding spots. Because the size of a single LED core particle is smaller and the light-emitting power is not large, the LED light-emitting diode is formed by connecting a plurality of LED core particles in parallel, and the light output power of an LED device can be effectively improved. The P electrode is of a whole-surface silver nanowire structure, so that the carrier recombination efficiency can be effectively improved, and the bandwidth of the LED is improved.

Description

LED device for communication
Technical Field
The invention relates to the technical field of illumination and communication, in particular to an LED device for communication.
Background
The LED is applied to visible Light communication, namely LIFI (Light Fidelity), blue Light LED is used for exciting YAG (yttrium aluminum garnet) Eu fluorescent powder to form white Light, information is transmitted through a lamp, the white Light is connected to a lighting device based on an internet network, mobile equipment such as IPAD (internet protocol ad) and Mobile Phone is used for receiving optical signals under the Light, information transmission such as video is achieved, and the LED can be applied to places such as airplane cabins, automobiles, meeting rooms, underwater, mines and the like. LIFIs are also known as Visible Light Communication LEDs (VLC LEDs).
The LED is a core element of the LIFI system for transmitting data, and in order to realize the application of the high-speed practical visible light communication system, it is one of the necessary conditions to develop and prepare a high-performance device. At present, from the research results of visible light communication LED epitaxial wafers reported in the literature, there are major technical problems that although the frequency reaches hundreds of M to several G, most devices are in a state of low luminous efficiency and brightness, and the transmission rate and luminous efficiency cannot meet the application requirements at the same time, so the technology has not yet entered the practical stage. The research and development team in China still has great difficulty in researching and developing high-power white light LED devices (the power is more than or equal to 1 watt) and high-efficiency high-speed white light LED devices (when the luminous efficiency is more than or equal to 100lm/W, the single-wavelength bandwidth is more than or equal to 50 MHz) (the research and development target of national visible light communication).
Disclosure of Invention
In order to overcome the defects of the prior art, the invention aims to provide an LED device for communication, wherein a plurality of Micro-LED core particles are connected in parallel to improve the luminous power of the LED device, and meanwhile, ag nanowires are used as a P electrode of the device to improve the current expansion and improve the light transmittance. The luminous efficiency is improved, the current expansion uniformity of the LED is improved, and the bandwidth of the LED is improved.
The purpose of the invention is realized by adopting the following technical scheme:
a device of LED used for communication comprises a substrate, a plurality of core particles which are connected in parallel and arranged on the substrate, and a P electrode arranged on the tops of the core particles; the core particles are sequentially grown with an undoped GaN buffer layer, an N-GaN layer, an InGaN/GaN multi-quantum well layer, a P-AlGaN electronic barrier layer and a P-GaN layer on the substrate from bottom to top by utilizing the MOCVD technology; the P electrode is arranged on the upper layer of the P-GaN layer of each core grain and is made of silver nanowires; the N-GaN layer is connected with N electrodes, the N electrodes of the core particles are connected through wires, and the wires are further connected with welding spots.
Further, the N electrode is annularly arranged on the outer side face of the N-GaN layer.
Furthermore, the N electrode is made of one or more of Ti, al, ni and Au, so that the ohmic contact characteristic of the N electrode can be effectively improved.
Further, the N electrodes of the core particles are made of the same material.
Still further, the LED device for communication further comprises a connection bridge and a protection layer, wherein the connection bridge is arranged on the N-G of the core particles connected in parallelThe aN layers are connected with the N electrodes of the two core particles, the conducting wires are arranged on the upper layer of the connecting bridge and are interconnected, and the upper layer of the conducting wires is provided with a protective layer; the connecting bridge and the protective layer are made of SiO 2 。
Further, the preparation method of the connecting bridge and the protective layer comprises the following steps: etching the mesa of mesa to obtain N-GaN layer, and depositing SiO on the upper layer of N-GaN layer 2 Layer on SiO 2 Photoetching the upper layer of the connection bridge, evaporating metal on the upper layer of the connection bridge, photoetching a lead, an N electrode and a welding spot, and depositing SiO on the upper layer of the lead 2 Layer, obtaining a protective layer; the metal is one or more than two of Ti, al, ni or Au.
Still further, the substrate is made of one of sapphire, silicon carbide or gallium nitride.
Furthermore, the number of the core particles is 3N, N is more than or equal to 1, and N is an integer.
Still further, the length of the substrate is 5-20 cm.
Further, the diameter of the core particle is 10 to 200 μm.
Compared with the prior art, the invention has the beneficial effects that:
(1) Because the size of a single LED core particle is small and the luminous power is not large, the LED device for communication is formed by connecting a plurality of LED core particles in parallel, and the light output power of the LED device can be effectively improved. And silver nanowires are selected as the material of the P electrode, and have excellent light transmittance and bending resistance due to the size effect of nanometer level in addition to excellent conductivity of silver. Compared with the traditional metal or alloy material, the transmittance of the silver nanowire is obviously improved, and the output power of the device is improved. The P electrode is arranged on the upper surface of the P-GaN layer, and the overall silver nanowire electrode structure can effectively improve the carrier recombination efficiency and improve the bandwidth of the LED.
(2) According to the LED device for communication, after the N-GaN layer is obtained in an ICP etching mode, the N electrode is arranged on the outer side face of the N-GaN layer in a surrounding mode, the current expansion rate is improved, and meanwhile the current can be distributed in an LED chip more uniformly.
(3) The LED device for communication is also provided with a connecting bridge and a protective layer of SiO 2 The connecting bridge made of the material is arranged between the N-GaN layer and the lead, so that the N-GaN layer is prevented from contacting the lead, and an insulating effect is achieved, and electrons can be effectively injected into the device from the N electrode; siO 2 2 The protective layer of material sets up in the top of wire, avoids wire and P electrode to switch on and takes place the condition of short circuit, plays insulating effect to guarantee that the hole can pour into the device into from the P electrode effectively.
Drawings
FIG. 1 is a schematic diagram of the structure of a device of an LED of the present invention;
FIG. 2 is a schematic diagram of the structure of a single core particle of a device of the LED of the present invention;
FIG. 3 is a top view of a single core particle of a device of an LED of the present invention;
FIG. 4 is a schematic surface view of two adjacent core particles of a device of an LED of the present invention connected in parallel;
fig. 5 is a schematic cross-sectional view of two adjacent core particles of a device of an LED of the present invention connected in parallel.
In the figure: 1. a substrate; 2. a wire; 3. welding points; 4. an N electrode; 5. core particles; 6. a P electrode; 7. a non-doped GaN buffer layer; 8. an N-GaN layer; 9. an InGaN/GaN multi-quantum well layer; 10. a p-AlGaN electron blocking layer; 11. a P-GaN layer; 12. a connecting bridge; 13. and a protective layer.
Detailed Description
The present invention will be further described with reference to the accompanying drawings and the detailed description, and it should be noted that any combination of the embodiments or technical features described below can be used to form a new embodiment without conflict.
As shown in fig. 1, the present invention provides a device of LEDs for communication, comprising several core particles 5 connected in parallel and all arranged on the same substrate 1. All the core particles 5 are integrated on one substrate 1 in parallel, and all the core particles 5 share one P electrode 6. Preferably, 3N (N.gtoreq.1 and an integer) core particles 5 are arranged in parallel. Wherein the diameter of the core particle 5 is 10 to 200 μm. Preferably 20 μm.
Wherein, the material used for the P electrode 6 is silver nanowire. Silver is a good electrical conductor, the resistivity is low, the conductivity is high, and the nano silver wire is applied to the conducting layer to lead out the collected current, so that the energy loss can be reduced compared with the TCO semiconductor. The silver nanowires have excellent light transmittance and flexibility resistance due to a nano-scale size effect, in addition to excellent conductivity of silver. The P electrode 6 made of the silver nanowires can improve the conductivity of the P electrode 6 and the P-GaN layer 11, and meanwhile, the silver nanowires are thin and have good light transmittance, so that the output power of the device is improved. The P electrode 6 is of a surface structure, the contact area of the P electrode and the LED chip is increased, the carrier recombination efficiency can be effectively improved, and the bandwidth of the LED is improved.
As shown in fig. 2, an LED structure is grown on a substrate 1 by using a Metal Organic Chemical Vapor Deposition (MOCVD) technique, and a non-doped GaN buffer layer 7, an N-GaN layer 8, an InGaN/GaN multi-quantum well layer 9, a P-AlGaN electron barrier layer 10 and a P-GaN layer are sequentially grown on the core particles 5 from bottom to top on the same substrate 1; the P-electrode 6 is disposed on the P-GaN layer of each core grain. The substrate 1 may be one of sapphire, silicon carbide, and gallium nitride, or may be an epitaxial substrate 1 of one of these materials. Since the length of the substrate 1 is 5 to 20cm.
As shown in FIG. 3, the N-GaN layer 8 is obtained by ICP etching, and the N electrode 4 is annularly arranged on the outer side surface of the N-GaN layer 8, so that the current distribution in the LED chip is more uniform. N electrodes 4 on a plurality of core particles 5 are connected through wires 2, the wires 2 are also connected with welding spots 3, the welding spots 3 are externally connected with a circuit and can be divided into a plurality of branches, and 3N (N is not less than 1 and is an integer) core particles 5 are connected in parallel. After a plurality of core particles 5 are assembled, all the core particles 5 share the same layer of the P electrode 6 and the N electrode 4, thereby playing a role of parallel connection.
Furthermore, the material of the N electrode 4 is one or more of Ti, al, ni, and Au, which can effectively improve the ohmic contact characteristic of the N electrode 4. The N electrodes 4 of the core particles 5 are made of the same material.
In order to more clearly show the parallel connection between the core particles 5, connecting bridges 12 are provided as shown in FIGS. 4 to 5The N-GaN layers 8 of the core particles 5 which are connected in parallel are arranged between and connected with the N electrodes 4 of the two core particles 5, the conducting wire 2 is arranged on the upper layer of the connecting bridge 12 and is interconnected, and the protective layer 13 is arranged on the upper layer of the conducting wire 2; the connecting bridge 12 and the protective layer 13 are both made of SiO 2 . The specific preparation method comprises the following steps: the mesa of the mesa is etched, after the N-GaN layer 8 is obtained, deposition of SiO on the upper layer of the N-GaN layer 8 by PECVD technique 2 Layer, then on SiO 2 Photoetching the upper layer of the layer to form a connecting bridge 12, evaporating metal on the upper layer of the connecting bridge 12, photoetching a lead 2, an N electrode 4 and a welding spot 3, and continuously depositing SiO on the upper layer of the lead 2 by using a PECVD technology 2 Layer, the protective layer 13 is obtained. The metal is one or more than two of Ti, al, ni or Au.
Finally, a whole layer of silver nanowires is deposited above the P-GaN layer 11 by PECVD to be used as a P electrode 6, the P electrode 6 is connected with the P-GaN layer 11 of each core grain 5, and holes are injected into the device under the action of an external circuit. After parallel assembly, all the core particles 5 share the same layer of silver nanowire P electrode 6 and N electrode 4, and the parallel connection effect is achieved. SiO 2 2 The connecting bridge 12 made of materials is arranged between the N-GaN layer 8 and the lead 2, so that the N-GaN layer 8 is prevented from contacting the lead 2, an insulating effect is achieved, and electrons can be effectively injected into the device from the N electrode 4; siO 2 2 The protective layer 13 made of the material is arranged above the lead 2, so that the situation that the lead 2 is conducted with the P electrode 6 to cause short circuit is avoided, and the insulating effect is achieved, so that holes can be effectively injected into the device from the P electrode 6.
The above embodiments are only preferred embodiments of the present invention, and the scope of the present invention should not be limited thereby, and any insubstantial changes and substitutions made by those skilled in the art based on the present invention are intended to be covered by the claims.

Claims (8)

1. A device of an LED for communication is characterized by comprising a substrate, a plurality of core particles which are connected in parallel and arranged on the substrate, and a P electrode arranged on the tops of the plurality of core particles; the core particles are sequentially grown on the substrate from bottom to top with an undoped GaN buffer layer, an N-GaN layer, an InGaN/GaN multi-quantum well layer and a p-AlGaN electronic resistorA barrier layer and a P-GaN layer; the P electrode is arranged on the upper layer of the P-GaN layer of each core particle, and the material of the P electrode is silver nanowires; the N-GaN layer is connected with N electrodes, the N electrodes of the core particles are connected through a lead, and the lead is also connected with welding spots; the N electrode is annularly arranged on the outer side surface of the N-GaN layer; the LED device for communication further comprises a connecting bridge and a protective layer, wherein the connecting bridge is arranged between the N-GaN layers of the core particles which are connected in parallel and is connected with the N electrodes of the two core particles, the conducting wires are arranged on the upper layer of the connecting bridge and are interconnected, and the protective layer is arranged on the upper layer of the conducting wires; the connecting bridge and the protective layer are made of SiO 2 。
2. The device of claim 1, wherein the material of the N-electrode is one or more of Ti, al, ni, or Au.
3. The device of LED for communication according to claim 1 or 2, wherein the N electrodes of the plurality of core particles are all made of the same material.
4. The device of LED for communication of claim 3, wherein the connecting bridge and the protective layer are prepared by: etching the mesa of mesa to obtain N-GaN layer, and depositing SiO on the upper layer of N-GaN layer 2 Layer, then on SiO 2 Photoetching the upper layer of the connection bridge, evaporating metal on the upper layer of the connection bridge, photoetching a lead, an N electrode and a welding spot, and depositing SiO on the upper layer of the lead 2 Layer, obtaining a protective layer; the metal is one or more than two of Ti, al, ni or Au.
5. The device of LEDs for communications according to claim 1, wherein the material of the substrate is one of sapphire, silicon carbide or gallium nitride.
6. The device of LED for communication of claim 1, wherein the number of the core particles is 3N, N ≧ 1 and N is an integer.
7. The device of LED for communication of claim 1, wherein the length of the substrate is 5-20 cm.
8. The device of LED for communication according to claim 1, wherein the diameter of the core particle is 10 to 200 μm.
CN202110726527.2A 2021-06-29 2021-06-29 LED device for communication Active CN113690265B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110726527.2A CN113690265B (en) 2021-06-29 2021-06-29 LED device for communication

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110726527.2A CN113690265B (en) 2021-06-29 2021-06-29 LED device for communication

Publications (2)

Publication Number Publication Date
CN113690265A CN113690265A (en) 2021-11-23
CN113690265B true CN113690265B (en) 2023-01-17

Family

ID=78576486

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110726527.2A Active CN113690265B (en) 2021-06-29 2021-06-29 LED device for communication

Country Status (1)

Country Link
CN (1) CN113690265B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113690348B (en) * 2021-06-29 2023-02-24 河源市众拓光电科技有限公司 LED device for visible light communication

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102270633A (en) * 2011-07-29 2011-12-07 贵州大学 High-power flip-chip array LED chip and manufacturing method thereof
CN102623606A (en) * 2012-03-31 2012-08-01 中国科学院半导体研究所 Gallium-nitride-based light-emitting diode with silver nanowire transparent electrode and manufacturing method of gallium-nitride-based light-emitting diode
CN105161581A (en) * 2015-09-15 2015-12-16 华南师范大学 Luminescent device with illumination and communication double functions
CN106788760A (en) * 2016-11-11 2017-05-31 华南师范大学 Lift the visible light communication ballistic device of response frequency
CN109216399A (en) * 2018-09-29 2019-01-15 华南理工大学 Inverted structure micro-dimension photonic crystal LED array chip and preparation method thereof

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20160130919A (en) * 2015-05-04 2016-11-15 삼성전자주식회사 Light emitting diode package
CN106328641B (en) * 2016-10-11 2018-12-28 华南师范大学 Visible light communication LED with spiral inductance and preparation method thereof

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102270633A (en) * 2011-07-29 2011-12-07 贵州大学 High-power flip-chip array LED chip and manufacturing method thereof
CN102623606A (en) * 2012-03-31 2012-08-01 中国科学院半导体研究所 Gallium-nitride-based light-emitting diode with silver nanowire transparent electrode and manufacturing method of gallium-nitride-based light-emitting diode
CN105161581A (en) * 2015-09-15 2015-12-16 华南师范大学 Luminescent device with illumination and communication double functions
CN106788760A (en) * 2016-11-11 2017-05-31 华南师范大学 Lift the visible light communication ballistic device of response frequency
CN109216399A (en) * 2018-09-29 2019-01-15 华南理工大学 Inverted structure micro-dimension photonic crystal LED array chip and preparation method thereof

Also Published As

Publication number Publication date
CN113690265A (en) 2021-11-23

Similar Documents

Publication Publication Date Title
CN102339913B (en) High-voltage LED (Light Emitting Diode) device and manufacturing method thereof
US9117986B2 (en) Light emitting device
CN103996776B (en) Luminescent device and light emitting device package
CN104241493B (en) Luminescent device and light emitting device package
US9455380B2 (en) High color rendering light emitting device including different phosphors
WO2010095781A1 (en) Light-emitting device and fabrication method thereof
CN102201426B (en) Light-emitting Diode And Its Making Method
KR101007128B1 (en) Light emitting device and method for fabricating the same
KR101047720B1 (en) Light emitting device, method for fabricating the light emitting device and light emitting device package using the light emitting device
JPH10200159A (en) Semiconductor light emitting element
US20130015465A1 (en) Nitride semiconductor light-emitting device
CN103107261A (en) Semiconductor light emitting device and package
US10490701B2 (en) Light emitting diode chip
CN102194952A (en) Light emitting device and light emitting device package having the same
WO2008156294A2 (en) Semiconductor light emitting device and method of fabricating the same
KR20140142826A (en) Light emitting device and light emitting device package
CN113690265B (en) LED device for communication
CN209374473U (en) A kind of semiconductor light-emitting elements
WO2010074373A1 (en) Light-emitting device and manufacturing method thereof
CN107958900B (en) Light-emitting diode with vertical structure
KR20150007641A (en) Light emitting device and light emitting device package
KR20110132160A (en) Semiconductor light emitting diode and method of manufacturing thereof
JP2012060061A (en) Method for manufacturing semiconductor light emitting device and the semiconductor light emitting device
CN106299073B (en) LED wafer and forming method thereof
KR20150034565A (en) LED device and the method for manufacturing of the same

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant