CN113676050B - Self-resonant drive isolation low-stress bidirectional Class E 2 High frequency power converter - Google Patents

Self-resonant drive isolation low-stress bidirectional Class E 2 High frequency power converter Download PDF

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CN113676050B
CN113676050B CN202010408467.5A CN202010408467A CN113676050B CN 113676050 B CN113676050 B CN 113676050B CN 202010408467 A CN202010408467 A CN 202010408467A CN 113676050 B CN113676050 B CN 113676050B
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class
port
resonant
transformer
capacitor
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CN113676050A (en
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胡西红
黄春蓉
秦东东
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Beijing Machinery Equipment Research Institute
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Beijing Machinery Equipment Research Institute
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/33569—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements
    • H02M3/33576—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only having several active switching elements having at least one active switching element at the secondary side of an isolation transformer
    • H02M3/33584—Bidirectional converters
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
    • H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
    • H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
    • H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
    • H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/33507—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters
    • H02M3/33523—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of the output voltage or current, e.g. flyback converters with galvanic isolation between input and output of both the power stage and the feedback loop
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
    • Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)
  • Dc-Dc Converters (AREA)

Abstract

The invention relates to a self-resonance driving isolation low-stress bidirectional Class E 2 The high-frequency power converter belongs to the technical field of switching power supplies and solves the problems that the switching tube of the existing converter is high in voltage stress, large in system size and incapable of bidirectionally flowing energy. The converter includes: the device comprises a first Class E resonance unit, an isolated matching network and a second Class E resonance unit; the second port of the first Class E resonance unit is connected with the first port of the isolation type matching network, and the second port of the isolation type matching network is connected with the first port of the second Class E resonance unit; when the energy of the converter flows forward, a first port of the first Class E resonance unit is connected with a power supply, and a second port of the second Class E resonance unit is connected with a load; when the energy of the converter flows reversely, the first port of the first Class E resonance unit is connected with a load, and the second port of the second Class E resonance unit is connected with a power supply.

Description

Self-resonant drive isolation low-stress bidirectional Class E 2 High frequency power converter
Technical Field
The invention relates to the technical field of switching power supplies, in particular to a self-resonant driving isolation low-stress bidirectional Class E 2 A high frequency power converter.
Background
In the field of industrial electronics and consumer electronics, a large number of switching power supplies are required to have high stability, high efficiency, high power density, small volume and light weight, so as to ensure that the system can continue to operate safely and reliably and effectively reduce the volume and weight thereof. Owing to the rapid development of the third generation wide bandgap semiconductor technology represented by SiC and GaN, especially the large-scale production and application of GaN switching devices with excellent high-frequency characteristics, the improvement of the operating frequency of the system becomes an effective method, and the miniaturization and the weight reduction of the switching power supply can be easily realized. When the working frequency of the system is increased to tens of megahertz, the parameter values of the passive elements in the system are greatly reduced, and the method has great significance in improving the integration level of the system and reducing the volume of the system.
However, with the increase of the switching frequency, the system is in a full resonance state, so that the voltage and current stress in the system is too high, and adverse effects are brought to the safe and stable operation of the system and the improvement of the working efficiency. In order to reduce the voltage stress of a switching tube in a system, LC resonant branches are usually connected in parallel to two ends of the switching tube, so that the voltage harmonic characteristic of the system is adjusted, and the aim of reducing the stress is achieved. However, this method of introducing additional branches increases the volume of the system and hinders the improvement of the system efficiency.
In order to improve the working safety of the system, the power converter is usually required to be electrically isolated, and aiming at the problem, the existing design method is to use a high-frequency magnetic core winding type transformer, but the leakage inductance of the transformer can influence the resonance working state of the system, and meanwhile, the use of the magnetic core type transformer is not beneficial to the miniaturization and high efficiency of the system.
In addition, with the progress of technology, the bidirectional DC/DC power converter is used as an interface for energy bidirectional flow, and has great technical advantages and application potential in the fields of photovoltaic power generation, micro-grid systems, electric automobiles and the like. The circuit topology of the traditional bidirectional power converter mainly adopts non-isolated topologies such as Buck/Boost type, buck-Boost type, cuk type, zata/SEPIC type and the like and isolated topologies such as full bridge type, half bridge type and the like, and the switching tubes of the topologies usually adopt a hard switching working mode, so that the device has higher heating and lower system efficiency.
In the technical field of high-frequency driving, a high-frequency crystal oscillator is generally adopted to generate independent square wave signals, and then the driving capability of the high-frequency square wave signals is improved through a later-stage circuit, so that the driving requirement of a switching tube is met. However, the square wave drive has huge capacitive switching loss under the high frequency condition, and for this problem, resonant drive is usually formed by connecting resonant inductors in series on the basis of square wave drive, and drive energy is transferred and converted between the parasitic capacitance of the gate electrode of the switching tube and the resonant inductors, so that the drive loss is reduced, but the disadvantage is that the resonant input current is increased, and the loss on the input resistor of the drive circuit is still larger.
Disclosure of Invention
In view of the above analysis, the present invention aims to provide a self-resonant drivingIsolated low stress bi-directional Class E 2 The high frequency power converter is used for solving the defects of the prior converter.
The aim of the invention is mainly realized by the following technical scheme:
self-resonant drive isolation low-stress bidirectional Class E 2 A high frequency power converter, the converter comprising: the device comprises a first Class E resonance unit, an isolated matching network and a second Class E resonance unit;
the second port of the first Class E resonance unit is connected with the first port of the isolation type matching network, and the second port of the isolation type matching network is connected with the first port of the second Class E resonance unit;
when the energy of the converter flows forward, a first port of the first Class E resonance unit is connected with a power supply, and a second port of the second Class E resonance unit is connected with a load;
when the energy of the converter flows reversely, the first port of the first Class E resonance unit is connected with a load, and the second port of the second Class E resonance unit is connected with a power supply.
Based on the scheme, the following improvements are also made:
further, the first Class E resonating unit includes: capacitor C 1 Resonance capacitor C F Resonant inductance L F Inductance L G1 N-type switching tube S F DC bias power supply V b1 ；
Resonant inductance L F One end of (a) is connected with a capacitor C 1 Is a resonant inductance L F The other end of (2) is connected with an N-type switch tube S F Drain electrode of (C), resonance capacitor (C) F Is a member of the group;
the other end of the capacitor C1 is connected with a DC bias power supply V b1 Is a cathode, N-type switch tube S F Source of (C) and resonance capacitor C F Is arranged at the other end of the tube; DC bias power supply V b1 Positive series inductance L of (a) G1 Is connected to the N-type switch tube S F A gate electrode of (a);
the resonant inductance L F One end of (2)The first positive port is used as a first Class E resonance unit and is used for connecting a power supply positive electrode or a load positive electrode;
the other end of the capacitor C1 is used as a first negative port of the first Class E resonance unit and is connected with a power supply negative electrode or a load negative electrode;
the resonance capacitor C F The first positive port is used for connecting with the first positive port of the isolation type matching network;
resonance capacitor C F The other end of the first Class E resonant cell is used as a second negative port of the first Class E resonant cell for connecting with the first negative port of the isolated matching network.
Further, the second Class E resonant unit comprises a resonant capacitor C d Capacitance C 2 Resonant inductance L d Inductance L G2 N-type switching tube S d DC bias power supply V b2 ；
Resonance capacitor C d One end of (a) is connected with the resonant inductor L d One end of (N) type switching tube S d A drain electrode of (2); resonant inductance L d The other end of (2) is connected with a capacitor C 2 Is a member of the group;
resonance capacitor C d The other end of (a) is connected with a DC bias power supply V b2 Is a cathode, N-type switch tube S d Source, capacitance C of (2) 2 Is arranged at the other end of the tube; DC bias power supply V b2 The positive electrode of (a) is connected with the inductor L in series G2 Is connected to the N-type switch tube S d A gate electrode of (a);
the resonance capacitor C d The first positive port of the second Class E resonance unit is used for connecting with the second positive port of the isolation type matching network;
the resonance capacitor C d The other end of the first Class E resonant unit is used as a first negative port of a second Class E resonant unit and is connected with a second negative port of an isolated matching network;
the capacitor C 2 Is used as a second positive port of the second Class E resonance unit and is used as a power supply positive electrode or a load positive electrode;
the capacitor C 2 Is the other end of the second Class E resonance unitAnd the two positive ports are used for connecting a power supply negative electrode or a load negative electrode.
Further, the isolated matching network includes: capacitor C B Capacitance C rec And a transformer T r ；
Capacitor C B One end of (a) is connected with a transformer T r Is the positive input of the transformer T r The positive output end of (1) is connected with a capacitor C rec Capacitance C B The other end of the first port is used as a first positive port of the isolated matching network; transformer T r The negative input end of (2) is used as the first negative port of the isolated matching network, the capacitor C rec The other end of the transformer T is used as a second positive port of the isolated matching network r As a second negative port of the isolated matching network.
Further, a transformer T r The middle part comprises an ideal transformer T and a primary side leakage inductance L r Exciting inductance L m And secondary side leakage inductance L rec The method comprises the steps of carrying out a first treatment on the surface of the Primary side leakage inductance L r One end of the transformer is connected with the same-name end of the primary coil of the ideal transformer T and the exciting inductance L m Exciting inductance L m The other end of the transformer is connected with the primary coil heteronymous end of the ideal transformer T, and the secondary coil heteronymous end of the ideal transformer T is connected with the secondary side leakage inductance L rec Is one end of the primary side leakage inductance L r Is taken as the other end of the transformer T r Exciting inductance L m Is taken as the other end of the transformer T r Is the negative input end of the (B) secondary side leakage inductance L rec Is taken as the other end of the transformer T r The same-name end of the secondary coil of the ideal transformer T is used as the transformer T r Is provided.
Further, L is determined according to the following formula d And C d Is used for the parameter value:
wherein ω=2pi f, t=1/f, f being the operating frequency of the converter; p (P) o For the output power of the converter, V o For the output of the converterA voltage; t (T) on ＝D d T，T off ＝(1-D d )T，D d Is an N-type switching tube S in the second Class E resonance unit d Is set to the duty cycle of the operation; is I in Is used for the initial phase angle of (a).
Further, L is determined according to the following formula F 、C F 、C rec 、L r Parameter values of the ideal turn ratio n of the ideal transformer:
wherein m is 1 And m 2 Respectively N-type switching tubes S in the first Class E resonance unit F Pole coefficients of fundamental wave and third harmonic of voltage stress of the transformer, k being a coupling coefficient of the transformer; r is R inv ＝(1.5V in ) 2 /(2P o )，V in An input voltage for the converter;X rec ＝R rec /2。
further, L is determined according to the following formula G1 Is a value of (1):
wherein s is a pullPraese operator, C GD1 、C GS1 Respectively the N-type switching tubes S F Is the Miller parasitic capacitance and the gate-source parasitic capacitance, R G1 Is the N-type switch tube S F Gate parasitic resistance of (a); v (V) DS_SF Is the N-type switch tube S F Drain-source voltage fundamental wave amplitude; v (V) GS_SF Is the N-type switch tube S F The fundamental amplitude of the gate-source drive voltage.
Further, L is determined according to the following formula G2 Is a value of (1):
wherein C is GD2 、C GS2 Respectively the N-type switching tubes S d Is the Miller parasitic capacitance and the gate-source parasitic capacitance, R G2 Is the N-type switch tube S d Gate parasitic resistance of (a); v (V) DS_Sd Is the N-type switch tube S d Drain-source voltage fundamental wave amplitude; v (V) GS_Sd Is the N-type switch tube S d The fundamental amplitude of the gate-source drive voltage.
Further, calculate L G1 V at the time of DS_SF The value is 1.5 times of the forward input voltage; calculate L G2 V at the time of GS_Sd The value is 1.5 times of the forward output voltage.
The invention has the following beneficial effects:
the embodiment provides a self-resonant drive isolation low-stress bidirectional Class E 2 The high-frequency power converter has the advantages of low voltage stress of the switching tube, small system volume and bidirectional energy flow. The high-frequency hollow transformer is adopted to provide electrical isolation, and the voltage stress of the switching tube is effectively reduced under the condition that an LC branch is not introduced. Meanwhile, a driving circuit of the switching tube and a power circuit of the system are integrated together, and a self-resonance driving mode is adopted, so that the volume of the system is reduced, and the working efficiency of the system is improved. In addition, the inversion and rectification links of the system adopt symmetrical resonant type Class E structures, which is beneficial to realizing the bidirectional flow of the energy of the system, and no matter the system works in a forward flow modeThe switching tubes in two links of inversion and rectification are operated in a zero voltage conduction (ZVS) mode, so that the safety and the working efficiency of the system are improved.
In the invention, the technical schemes can be mutually combined to realize more preferable combination schemes. Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
The drawings are only for purposes of illustrating particular embodiments and are not to be construed as limiting the invention, like reference numerals being used to refer to like parts throughout the several views.
FIG. 1 is a schematic circuit diagram of a prior art Boost high frequency power converter;
FIG. 2 is a schematic diagram of a prior art high frequency DC/DC system based on a wound transformer with a magnetic core;
FIG. 3 is a schematic diagram of a prior art double full bridge bi-directional DC/DC converter circuit;
FIG. 4 is a self-resonant drive isolated low stress bi-directional Class E of example 1 2 A high frequency power converter circuit schematic;
fig. 5 is an equivalent impedance network of the switch impedance ZDS;
FIG. 6 is a schematic diagram of a self-resonant circuit;
FIG. 7 is a diagram of S in forward flow mode F And S is d Drain-source voltage waveform diagram of (a);
FIG. 8 is S in reverse flow mode F And S is d Drain-source voltage waveform diagram of (a).
Detailed Description
Preferred embodiments of the present invention will now be described in detail with reference to the accompanying drawings, which form a part hereof, and together with the description serve to explain the principles of the invention, and are not intended to limit the scope of the invention.
Existing oneThe circuit topology of the Boost-type high frequency power converter is shown in fig. 1. The high-frequency DC/DC topology is connected with L in parallel at two ends of a switch tube S 2F And C 2F Through L F 、C F 、L 2F And C 2F The resonance of the switch tube can enable the drain-source impedance of the switch tube to present low-resistance characteristic to the second harmonic and high-resistance characteristic to the third harmonic, thereby eliminating the second harmonic at two ends of the switch tube and amplifying the third harmonic, and greatly reducing the voltage stress of the switch tube. But this topology does not achieve electrical isolation and L 2F And C 2F The introduction of (c) reduces the efficiency and power density of the system.
Another prior art high frequency DC/DC power converter topology is shown in fig. 2. This circuit also employs a method of introducing LC branches to reduce the voltage stress of the switching tube S. In addition, in order to realize electrical isolation, the circuit adopts a magnetic core type winding transformer structure, but the transformer is of a winding type structure, the magnetic core is large, the volume and the weight of the system are obviously increased, the primary purpose of high-frequency switching power supply is seriously deviated, and adverse effects are caused on the miniaturization and the light weight of the switching power supply. Meanwhile, the loss of the magnetic core under the high-frequency condition is extremely large, and the leakage inductance of the transformer causes an obstacle to the accurate design of system parameters, which seriously damages the improvement of the system performance.
A prior art double full bridge bi-directional DC/DC converter circuit is shown in fig. 3. The energy of the circuit can be obtained from the high voltage side V H Flow to low pressure side V L And can also be from the low pressure side V L Flow to high pressure side V H A bi-directional flow of energy is achieved. However, the converter uses more switching tubes, and the switching tubes are in a hard-switching operation mode, so that the switching loss of the system is more. Meanwhile, in order to realize electrical isolation and voltage class conversion, the system adopts a magnetic core type transformer, so that the power loss and the volume of the system are further increased.
In view of the above-mentioned drawbacks of the prior art, the present invention is directed to providing an isolated Class E with low voltage stress, small system size, and bi-directional energy flow 2 High frequency power converter topology. Detailed description of the preferred embodiments1.
Example 1
The embodiment discloses a self-resonant driving isolation low-stress bidirectional Class E 2 A high frequency power converter, circuit diagram of which is shown in fig. 4, said converter comprising: the device comprises a first Class E resonance unit, an isolated matching network and a second Class E resonance unit; the second port of the first Class E resonance unit is connected with the first port of the isolation type matching network, and the second port of the isolation type matching network is connected with the first port of the second Class E resonance unit; when the energy of the converter flows forward, a first port of the first Class E resonance unit is connected with a power supply, and a second port of the second Class E resonance unit is connected with a load; when the energy of the converter flows reversely, the first port of the first Class E resonance unit is connected with a load, and the second port of the second Class E resonance unit is connected with a power supply.
Preferably, the first Class E resonant cell comprises: capacitor C 1 Resonance capacitor C F Resonant inductance L F Inductance L G1 N-type switching tube S F DC bias power supply V b1 The method comprises the steps of carrying out a first treatment on the surface of the Wherein the resonant inductance L F One end of (a) is connected with a capacitor C 1 Is a resonant inductance L F The other end of (2) is connected with an N-type switch tube S F Drain electrode of (C), resonance capacitor (C) F Is a member of the group; the other end of the capacitor C1 is connected with a DC bias power supply V b1 Is a cathode, N-type switch tube S F Source of (C) and resonance capacitor C F Is arranged at the other end of the tube; DC bias power supply V b1 Positive series inductance L of (a) G1 Is connected to the N-type switch tube S F A gate electrode of (a); the resonant inductance L F The first positive port of the first Class E resonance unit is used for connecting with a power supply positive electrode or a load positive electrode; the other end of the capacitor C1 is used as a first negative port of the first Class E resonance unit and is used for being connected with a power supply negative electrode or a load negative electrode. The resonance capacitor C F The first positive port is used for connecting with the first positive port of the isolation type matching network; resonance capacitor C F Is arranged at the other end of (2)And the second negative port is used as a first Class E resonance unit and is used for connecting with the first negative port of the isolation type matching network. In the first Class E resonant cell, the dc bias power V b1 For driving N-type switching tube S F Can work according to the grid electrode of the N-type switch tube S F The on-voltage of the grid electrode of the transistor is selected to be suitable for the voltage V b1 Is a voltage value of (a).
Preferably, the second Class E resonant cell comprises a resonant capacitor C d Capacitance C 2 Resonant inductance L d Inductance L G2 N-type switching tube S d DC bias power supply V b2 The method comprises the steps of carrying out a first treatment on the surface of the Resonance capacitor C d One end of (a) is connected with the resonant inductor L d One end of (N) type switching tube S d A drain electrode of (2); resonant inductance L d The other end of (2) is connected with a capacitor C 2 Is a member of the group; resonance capacitor C d The other end of (a) is connected with a DC bias power supply V b2 Is a cathode, N-type switch tube S d Source, capacitance C of (2) 2 Is arranged at the other end of the tube; DC bias power supply V b2 The positive electrode of (a) is connected with the inductor L in series G2 Is connected to the N-type switch tube S d A gate electrode of (a); the resonance capacitor C d The first positive port of the second Class E resonance unit is used for connecting with the second positive port of the isolation type matching network; the resonance capacitor C d The other end of the first Class E resonant unit is used as a first negative port of a second Class E resonant unit and is connected with a second negative port of an isolated matching network; the capacitor C 2 Is used as a second positive port of the second Class E resonance unit and is used as a power supply positive electrode or a load positive electrode; the capacitor C 2 The other end of the first Class E resonant cell is used as a second positive port of the second Class E resonant cell for connecting with a power supply negative electrode or a load negative electrode. In the second Class E resonant cell, the dc bias power V b2 For driving N-type switching tube S d Can work according to the grid electrode of the N-type switch tube S d The on-voltage of the grid electrode of the transistor is selected to be suitable for the voltage V b2 Is a voltage value of (a).
Preferably, the isolated matching network comprises: capacitor C B Capacitance C rec And a transformer T r The method comprises the steps of carrying out a first treatment on the surface of the Capacitance deviceC B One end of (a) is connected with a transformer T r Is the positive input of the transformer T r The positive output end of (1) is connected with a capacitor C rec Capacitance C B The other end of the first port is used as a first positive port of the isolated matching network; transformer T r The negative input end of (2) is used as the first negative port of the isolated matching network, the capacitor C rec The other end of the transformer T is used as a second positive port of the isolated matching network r As a second negative port of the isolated matching network.
Preferably, the transformer T r The middle part comprises an ideal transformer T and a primary side leakage inductance L r Exciting inductance L m And secondary side leakage inductance L rec The method comprises the steps of carrying out a first treatment on the surface of the Primary side leakage inductance L r One end of the transformer is connected with the same-name end of the primary coil of the ideal transformer T and the exciting inductance L m Exciting inductance L m The other end of the transformer is connected with the primary coil heteronymous end of the ideal transformer T, and the secondary coil heteronymous end of the ideal transformer T is connected with the secondary side leakage inductance L rec Is one end of the primary side leakage inductance L r Is taken as the other end of the transformer T r Exciting inductance L m Is taken as the other end of the transformer T r Is the negative input end of the (B) secondary side leakage inductance L rec Is taken as the other end of the transformer T r The same-name end of the secondary coil of the ideal transformer T is used as the transformer T r Is provided.
The following pairs of self-resonant drive isolation low-stress bidirectional Class E 2 The working process of the high-frequency power converter is described as follows:
(1) When the energy of the converter flows forward, a first port of the first Class E resonance unit is connected with a power supply, and a second port of the second Class E resonance unit is connected with a load; the converter operation process at this time is:
switching tube S in first Class E resonant cell F Make L in high frequency switch state F And C F Resonance occurs to invert the DC voltage of the first port of the unit into high-frequency AC quantity, and LF, CF and transformer leakage inductance L are simultaneously carried out r Excitation inductance L of transformer m C rec Resonance, S is F Voltage of (2)Force is reduced and the voltage is passed through a transformer T r Transferred to the first port of the second Class E resonance unit and then passes through the switch tube S d High frequency on-off of (2) and L d And C d Which rectifies it into a dc voltage to be output to the second port of the second Class E resonant cell.
(2) When the energy of the converter flows reversely, a first port of the first Class E resonance unit is connected with a load, and a second port of the second Class E resonance unit is connected with a power supply. The converter operation process at this time is:
switching tube S in second Class E resonance unit d Make L in high frequency switch state d And C d Resonance occurs, the DC voltage of the second port of the unit is inverted into high-frequency AC quantity, and is output by the first port of the unit, and then is passed through a transformer T r Transmitting to the second port of the first Class E resonance unit, and finally passing through the switching tube S F High frequency on-off of (2) and L F And C F Which rectifies it into a dc voltage to be output to the first port of the first Class E resonant cell.
By analyzing the working process of the converter, when the energy of the converter flows forward, the first Class E resonant unit is used as an inverter, and the second Class E resonant unit is used as a rectifier; and when the energy of the converter flows reversely, the functions of the two are opposite.
Meanwhile, the working frequency and the load resistance of the system are kept unchanged when the energy flows in the forward direction and the reverse direction, so that the conversion ratio of the impedance of the fundamental wave and each subharmonic of the system is kept unchanged from the input end to the output end under the resonance state no matter in which direction the energy flows, and the converter realizes the step-down process no matter the energy flows in the forward direction or the reverse direction.
In addition, since the circuit structure of the converter and the circuit functions of each unit thereof are symmetrical to each other in the state of energy forward and backward flows, the design circuit is started from any one flow direction, and not only the design index of the flow direction but also the circuit index in the state opposite to the flow direction can be satisfied, so that the design of the system parameters is not affected by the energy flow direction in the converter, and therefore, the embodiment selects to perform parameter design in the working state when energy flows forward.
It will be appreciated that the design of the parameter values of the various elements in the converter depends on the design criteria of the converter. Illustratively, the design indexes in the present embodiment may be as shown in table 1.
Table 1 design index of converter
Energy flow direction Operating frequency Input voltage Output voltage System power Load resistor
Forward direction 20MHz 48V 24V 120W 4.8Ω
Reverse direction 20MHz 24V 12V 30W 4.8Ω
The following takes the forward flow of energy of the transformer as an example, and the parameter design process is described:
a. the parameters of the latter Class E rectifier (second Class E resonant cell) are designed as follows:
first assume C d Two ends of the power supply are connected in parallel with an alternating current source, the frequency of the alternating current source is consistent with the switching frequency of the system, and the amplitude I in For outputting currentMultiple times, and S d Duty ratio D of (2) d 0.5, then the equation set (1) can be obtained according to the correlation circuit principle, and then the correlation indexes in the table 1 are brought into (1), so that L can be calculated d And C d Is a parameter of (a).
Wherein ω=2pi f, t=1/f, f being the operating frequency of the converter; p (P) o For the output power of the converter, V o An output voltage for the converter; t (T) on ＝D d T，T off ＝(1-D d )T，D d Is an N-type switching tube S in the second Class E resonance unit d Is set to the duty cycle of the operation; is I in As an intermediate variable, can be found by equation (1).
b. Parameters of the preceding Class E inverter (first Class E resonant cell) and the isolated matching network are designed as follows:
because the input voltage is high, it is necessary to introduce higher voltage harmonics to reduce the switching tube S by network resonance F Is a voltage stress of (a). In actual operation, L F 、C F And L is equal to r 、L rec 、L m And the like participate in resonance together to realize the adjustment of the voltage harmonic characteristic of the switching tube, so that the voltage stress of the switching tube can be effectively reduced without introducing an additional LC branch. The use of the hollow transformer can improve the electrical safety of the system, has lower loss and volume, and is beneficial to improving the efficiency and the integration level of the system.
After neglecting higher harmonics above third harmonic in the system, switching tube S F The drain-source voltage expression of (2) is as follows:
wherein V is DS1 、V DS2 、V DS3 The fundamental wave amplitude, the second harmonic amplitude and the third harmonic amplitude of the drain-source voltage are respectively obtained,the fundamental wave phase angle, the second harmonic phase angle and the third harmonic phase angle of the drain-source voltage are respectively. Is mathematically derived in order to make v DS Minimum, thereby minimizing the voltage stress of the switching tube, v DS The harmonic characteristics of (a) should satisfy: the three conditions that the fundamental wave amplitude is 6 times of the third harmonic amplitude, the second harmonic amplitude is zero and the third harmonic phase angle is 3 times of the fundamental wave phase angle are adopted, and the frequency characteristics required to be met by the corresponding switching impedance are shown as follows:
this inside Z DS1 、Z DS2 、Z DS3 The fundamental, second harmonic and third harmonic impedances of the switch impedance, respectively.And->The fundamental phase angle and the third harmonic phase angle of the switching impedance, respectively.
And the equivalent model of the system switch impedance is shown in FIG. 5, and the expression is shown in (4)
Where zrec=rrec+jxrec,xrec=rrec/2. The pole-zero configuration method is adopted to enable the switch impedance to meet the condition of the expression (2), so that the voltage stress of the switch tube is reduced, and the solving of the relevant parameters in fig. 5 is realized. First, configure Z DS Is 2 omega, thereby ensuring v DS The second harmonic amplitude of (2) is zero. Then configure Z DS Pole m 1 Omega and m 2 Omega, by reacting to m 1 And m 2 To ensure that the fundamental amplitude is 6 times the third harmonic amplitude and the third harmonic phase angle is 3 times the fundamental phase angle, the scan result being m 1 ＝1.0367，m 2 = 3.0945. At this time, m is 1 And m 2 The values of (2) are brought into the expression (5) and the transformer expression (6) which are obtained by combining the (3) and the (4), and then the parameter values of the inversion link and the matching link can be calculated.
Wherein m is 1 And m 2 Respectively N-type switching tubes S in the first Class E resonance unit F Pole coefficients of fundamental wave and third harmonic of voltage stress of the transformer, k being a coupling coefficient of the transformer; the value satisfiesAnd (3) obtaining the product. R is R inv ＝(1.5V in ) 2 /(2P o )，V in An input voltage for the converter; r is R rec ＝V o 2 /P o ，X rec ＝R rec /2。
c. Design of self-resonant driving parameters
The driving mode of the self-resonance driving is adopted to drive the switching tube in the front and rear two-stage Class E resonance link, and the driving mode has the advantages of being capable of increasing the system integration level and the working efficiency, and meanwhile, the self-resonance driving mode is adopted to automatically realize the correspondence of the phase relation of driving signals of the front and rear two-stage switching tube. The circuit schematic diagram of self-resonance is shown in figure 6, and its working principle is that the grid electrode of the switch tube is series-connected with resonance inductance L G Through L G Parasitic parameter C inside the switching tube GD 、C GS 、R G Is used for resonating the drain-source voltage v of the switch tube DS Resonance to the gate-source of the switching tube, thereby generating a fundamental component of the drive voltage, which is coupled with the DC bias voltage V b And superposing to form the driving voltage of the switching tube.
According to the related circuit principle, the relation between the gate voltage and the drain-source voltage of the switch tube can be obtained through mathematical derivation as shown in formulas (7) and (8).
Specifically, L is determined according to the following formula G1 Is a value of (1):
wherein s is Lappas operator, C GD1 、C GS1 Respectively the N-type switching tubes S F Is the Miller parasitic capacitance and the gate-source parasitic capacitance, R G1 Is the N-type switch tube S F Gate parasitic resistance of (a); v (V) DS_SF To be the instituteN-type switching tube S F Drain-source voltage fundamental wave amplitude; v (V) GS_SF Is the N-type switch tube S F The fundamental amplitude of the gate-source drive voltage.
L is also determined according to the following formula G2 Is a value of (1):
wherein s is Lappas operator, C GD2 、C GS2 Respectively the N-type switching tubes S d Is the Miller parasitic capacitance and the gate-source parasitic capacitance, R G2 Is the N-type switch tube S d Gate parasitic resistance of (a); v (V) DS_Sd Is the N-type switch tube S d Drain-source voltage fundamental wave amplitude; v (V) GS_Sd Is the N-type switch tube S d The fundamental amplitude of the gate-source drive voltage.
Because parasitic parameters in the switch tube are known, the self-resonance parameters L of the front stage and the rear stage can be solved only by selecting proper driving voltage fundamental wave amplitude and then bringing the driving voltage fundamental wave amplitude into expressions (7) and (8) G1 And L G2 And (5) finishing the design of the driving link. V (V) GS_SF 、V GS_Sd Usually, about 5V is selected; calculate L G1 V at the time of DS_SF The value is 1.5 times of the forward input voltage; calculate L G2 V at the time of DS_Sd The value is 1.5 times of the forward output voltage.
According to the method, the parameter design of the circuit topology is completed, simulation verification is carried out in circuit simulation software PSpice, and the simulation result is shown in fig. 7 and 8.
As can be seen from the figure, the system energy switches the tube S, whether it is flowing in positive or negative direction F And S is d Zero-voltage conduction is realized, so that the working efficiency is effectively improved. And the system is in forward flow S F The voltage stress of the voltage transformer is about 125V and about 2.6 times of the forward input voltage, the voltage stress is lower, and the working safety of the system is ensured.
The embodiment provides a self-resonant drive isolation low stress typeBidirectional Class E 2 The high-frequency power converter has the advantages of low voltage stress of the switching tube, small system volume and bidirectional energy flow. The high-frequency hollow transformer is adopted to provide electrical isolation, and the voltage stress of the switching tube is effectively reduced under the condition that an LC branch is not introduced. Meanwhile, a driving circuit of the switching tube and a power circuit of the system are integrated together, and a self-resonance driving mode is adopted, so that the volume of the system is reduced, and the working efficiency of the system is improved. In addition, the inversion and rectification links of the system adopt symmetrical resonant type Class E structures, which is beneficial to the realization of bidirectional flow of system energy, and the switching tubes of the inversion and rectification links are operated in a zero voltage conduction (ZVS) mode no matter the system is operated in a forward flow mode or a reverse flow mode, so that the safety and the working efficiency of the system are improved.
The converter may be used to charge a battery and then transfer electrical energy from the battery to a load when not being charged. For example, in a photovoltaic street lamp system, the battery is charged by the photovoltaic panel in the daytime, and power is supplied to the LED street lamp at night. Along with the development of technology, the power converter can be integrated inside a chip in the future, and the system can have two different transmission ratios by adjusting related parameters, so that the production cost of the converter is reduced.
Those skilled in the art will appreciate that all or part of the flow of the methods of the embodiments described above may be accomplished by way of a computer program to instruct associated hardware, where the program may be stored on a computer readable storage medium. Wherein the computer readable storage medium is a magnetic disk, an optical disk, a read-only memory or a random access memory, etc.
The present invention is not limited to the above-mentioned embodiments, and any changes or substitutions that can be easily understood by those skilled in the art within the technical scope of the present invention are intended to be included in the scope of the present invention.

Claims (7)

1. Self-resonant drive isolation low-stress bidirectional ClassE 2 High frequency workA rate converter, the converter comprising: the first class E resonance unit, the isolated matching network and the second class E resonance unit;
the second port of the first class E resonance unit is connected with the first port of the isolated matching network, and the second port of the isolated matching network is connected with the first port of the second class E resonance unit;
when the energy of the converter flows forward, a first port of the first ClassE resonance unit is connected with a power supply, and a second port of the second ClassE resonance unit is connected with a load;
when the energy of the converter flows reversely, a first port of the first ClassE resonance unit is connected with a load, and a second port of the second ClassE resonance unit is connected with a power supply;
the first class e resonant unit and the second class e resonant unit are structurally symmetrical to each other;
the second class E resonant unit comprises a resonant capacitor C d Capacitance C 2 Resonant inductance L d Inductance L G2 N-type switching tube S d DC bias power supply V b2 ；
Resonance capacitor C d One end of (a) is connected with the resonant inductor L d One end of (N) type switching tube S d A drain electrode of (2); resonant inductance L d The other end of (2) is connected with a capacitor C 2 Is a member of the group;
resonance capacitor C d The other end of (a) is connected with a DC bias power supply V b2 Is a cathode, N-type switch tube S d Source, capacitance C of (2) 2 Is arranged at the other end of the tube; DC bias power supply V b2 The positive electrode of (a) is connected with the inductor L in series G2 Is connected to the N-type switch tube S d A gate electrode of (a);
the resonance capacitor C d The first positive port of the second class E resonance unit is used for connecting with the second positive port of the isolated matching network;
the resonance capacitor C d The other end of the first resonant circuit is used as a first negative port of the second class E resonant unit and is used for being connected with a second negative port of the isolated matching network;
the capacitor C 2 Is used as a second positive port of the second class E resonance unit and is used as a power supply positive electrode or a load positive electrode;
the capacitor C 2 The other end of the first class E resonant unit is used as a second positive port of the second class E resonant unit and is used for connecting a power supply negative electrode or a load negative electrode;
the isolated matching network comprises: capacitor C B Capacitance C rec And a transformer T r ；
Capacitor C B One end of (a) is connected with a transformer T r Is the positive input of the transformer T r The positive output end of (1) is connected with a capacitor C rec Capacitance C B The other end of the first port is used as a first positive port of the isolated matching network; transformer T r The negative input end of (2) is used as the first negative port of the isolated matching network, the capacitor C rec The other end of the transformer T is used as a second positive port of the isolated matching network r The negative output end of the (a) is used as a second negative port of the isolated matching network;
determining L according to the following formula d And C d Is used for the parameter value:
wherein ω=2pi f, t=1/f, f being the operating frequency of the converter; p (P) o For the output power of the converter, V o An output voltage for the converter; t (T) on ＝D d T，T off ＝(1-D d )T，D d For N-type switching tube S in the second class E resonance unit d Is set to the duty cycle of the operation; is I in Is used for the initial phase angle of (a).
2. The self-resonant drive isolated low stress bi-directional class e of claim 1 2 A high-frequency power converter, characterized in that,
the first class e resonant cell includes: capacitor C 1 Resonance capacitor C F Resonant inductance L F Inductance L G1 N-type switching tube S F DC bias power supply V b1 ；
Resonant inductance L F One end of (a) is connected with a capacitor C 1 Is a resonant inductance L F The other end of (2) is connected with an N-type switch tube S F Drain electrode of (C), resonance capacitor (C) F Is a member of the group;
the other end of the capacitor C1 is connected with a DC bias power supply V b1 Is a cathode, N-type switch tube S F Source of (C) and resonance capacitor C F Is arranged at the other end of the tube; DC bias power supply V b1 Positive series inductance L of (a) G1 Is connected to the N-type switch tube S F A gate electrode of (a);
the resonant inductance L F The first end of the first class E resonance unit is used as a first positive port for connecting with a power supply positive electrode or a load positive electrode;
the other end of the capacitor C1 is used as a first negative port of the first class E resonance unit and is connected with a power supply negative electrode or a load negative electrode;
the resonance capacitor C F The first end of the first class E resonant unit is used as a first positive port of the isolation type matching network;
resonance capacitor C F The other end of the first resonant tank is used as a second negative port of the first class E resonant unit for connecting with the first negative port of the isolated matching network.
3. The self-resonant drive isolated low stress bi-directional class e of claim 2 2 High frequency power converter characterized by a transformer T r The middle part comprises an ideal transformer T and a primary side leakage inductance L r Exciting inductance L m And a secondary sideLeakage inductance L rec The method comprises the steps of carrying out a first treatment on the surface of the Primary side leakage inductance L r One end of the transformer is connected with the same-name end of the primary coil of the ideal transformer T and the exciting inductance L m Exciting inductance L m The other end of the transformer is connected with the primary coil heteronymous end of the ideal transformer T, and the secondary coil heteronymous end of the ideal transformer T is connected with the secondary side leakage inductance L rec Is one end of the primary side leakage inductance L r Is taken as the other end of the transformer T r Exciting inductance L m Is taken as the other end of the transformer T r Is the negative input end of the (B) secondary side leakage inductance L rec Is taken as the other end of the transformer T r The same-name end of the secondary coil of the ideal transformer T is used as the transformer T r Is provided.
4. A self-resonant drive isolated low stress bi-directional class e as recited in claim 3 2 A high-frequency power converter is characterized in that L is determined according to the following formula F 、C F 、C rec 、L r Parameter values of the ideal turn ratio n of the ideal transformer:
wherein m is 1 And m 2 Respectively N-type switching tubes S in the first class E resonance unit F Pole coefficients of fundamental wave and third harmonic of voltage stress of the transformer, k being a coupling coefficient of the transformer; r is R inv ＝(1.5V in ) 2 /(2P o )，V in An input voltage for the converter;X rec ＝R rec /2。
5. the self-resonant drive isolated low stress bi-directional class e of claim 4 2 The high-frequency power converter is characterized in that the inductance L is determined according to the following formula G1 Is the inductance value of (a):
wherein s is Lappas operator, C GD1 、C GS1 Respectively the N-type switching tubes S F Is the Miller parasitic capacitance and the gate-source parasitic capacitance, R G1 Is the N-type switch tube S F Gate parasitic resistance of (a); v (V) DS_SF Is the N-type switch tube S F Drain-source voltage fundamental wave amplitude; v (V) GS_SF Is the N-type switch tube S F The fundamental amplitude of the gate-source drive voltage.
6. The self-resonant drive isolated low stress bi-directional class e of claim 5 2 A high-frequency power converter is characterized in that L is determined according to the following formula G2 Is a value of (1):
wherein C is GD2 、C GS2 Respectively the N-type switching tubes S d Is the Miller parasitic capacitance and the gate-source parasitic capacitance, R G2 Is the N-type switch tube S d Gate parasitic resistance of (a); v (V) DS_Sd Is the N-type switch tube S d Drain-source voltage fundamental wave amplitude; v (V) GS_Sd Is the N-type switch tube S d The fundamental amplitude of the gate-source drive voltage.
7. The self-resonant drive isolated low stress bi-directional class e of claim 6 2 A high-frequency power converter, characterized in that,
calculate L G1 V at the time of DS_SF The value is 1 of the forward input voltage.5 times;
calculate L G2 V at the time of DS_Sd The value is 1.5 times of the forward output voltage.
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