CN110086354A - Single-phase double push-pull booster circuit and step-up method based on silicon carbide MOSFET - Google Patents
Single-phase double push-pull booster circuit and step-up method based on silicon carbide MOSFET Download PDFInfo
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- CN110086354A CN110086354A CN201910384566.1A CN201910384566A CN110086354A CN 110086354 A CN110086354 A CN 110086354A CN 201910384566 A CN201910384566 A CN 201910384566A CN 110086354 A CN110086354 A CN 110086354A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/32—Means for protecting converters other than automatic disconnection
- H02M1/34—Snubber circuits
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/22—Conversion of dc power input into dc power output with intermediate conversion into ac
- H02M3/24—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters
- H02M3/28—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac
- H02M3/325—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal
- H02M3/335—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/337—Conversion of dc power input into dc power output with intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode to produce the intermediate ac using devices of a triode or a transistor type requiring continuous application of a control signal using semiconductor devices only in push-pull configuration
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/0048—Circuits or arrangements for reducing losses
- H02M1/0054—Transistor switching losses
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
- Y02B70/00—Technologies for an efficient end-user side electric power management and consumption
- Y02B70/10—Technologies improving the efficiency by using switched-mode power supplies [SMPS], i.e. efficient power electronics conversion e.g. power factor correction or reduction of losses in power supplies or efficient standby modes
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- Power Engineering (AREA)
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Abstract
The invention discloses a kind of single-phase double push-pull booster circuit and step-up method based on silicon carbide MOSFET, prime are controlled using recommending booster circuit and recommend control circuit with simulation, and rear class is using full bridge rectifier；Push-pull circuit uses two switching tubes, and connects into push-pull amplifier, two push-pull transformer primary parallels, secondary tandem；For translation circuit under the driving of control circuit PWM wave signal, two switching tubes constantly replace on-off, DC input voitage are transformed into ac high frequency pulse voltage, then pulse ac is become high direct voltage by rectified filtering；The design has many advantages, such as that low-loss, high-efficient, highly-safe, circuit is simple, electromagnetic interference is small.
Description
Technical field
The present invention relates to technical field of electric equipment, more specifically to a kind of based on the single-phase of silicon carbide MOSFET
Double push-pull booster circuit and step-up method.
Background technique
It with automobile industry continues to develop, people in use also more carry out the requirement of automobile function also high.By bus
It is long-distance during the journey, AC power source is available due to not having, and headlight of camping, the laptop of people, digital camera etc. are set
It is standby that normal use is affected once out of power, cause inconvenience.These products be essentially all powered by industrial-frequency alternating current, and
The direct current of 12V is only provided on vehicle mostly, therefore Mobile inverse power source gradually becomes the essential electrical equipment of automobile.
Mobile inverse power source has the shortcomings that loss is big, price is high, power is low etc. currently on the market, this is to raising car room
Comfort level brings strong influence.Vehicle-mounted power supply is generally direct current 12V or so, in order to provide alternating current to rear class electrical appliance
Can, inverter is most important.And be a vital composition in inverter in DC boosting module, its developing water
It is flat that decisive role is played to the performance of inverter.Consider working environment severe in automobile to the electrical resistance of Switching Power Supply
Energy, space size, anti-interference ability and safety have higher requirement, therefore improve the efficiency of the prime boosting of Switching Power Supply
Seem and its important.The booster circuit being widely used at present is often semi-bridge alternation circuit, full-bridge circuit, recommends transformation electricity
Road etc., switching device used in push-pull circuit is few, and topological structure is simple, drives also simple.And transformer core bidirectional excitation,
Therefore in the identical situation of core dimensions, the power that push-pull circuit can be bigger than positive activation type circuit output, so being suitable for
The relatively low power inverter of original edge voltage.So the invention patent is improved based on push-pull circuit.
Summary of the invention
1, goal of the invention.
The invention proposes a kind of single-phase double push-pull booster circuit and step-up method based on silicon carbide MOSFET, realizes
12V voltage turns 360V, and the invention patent is to the Primary Component of push-pull type DC boosting part, such as high frequency transformer and
MOSFET power device has carried out key design and selection, improves the anti-interference and job stability of Mobile inverse power source.
2, the technical solution adopted in the present invention.
The invention discloses a kind of vehicle-mounted inverter DC voltage booster circuit of simulation control, prime uses and recommends booster circuit
And recommend control circuit with simulation and controlled, rear class uses full bridge rectifier；Push-pull circuit uses two switching tubes, and
Connect into push-pull amplifier, two push-pull transformer primary parallels, secondary tandem；Translation circuit is in control circuit
Under the driving of PWM wave signal, two switching tubes constantly replace on-off, and DC input voitage is transformed into ac high frequency pulse electricity
Pulse ac is become high direct voltage by pressure, then rectified filtering.
The described DC/DC DC boosting system of recommending in booster circuit is by first switch tube Q1, second switch Q2, third
Switching tube Q3, the 4th switching tube Q4, first diode D1, the second diode (D4), third diode D7, the 4th diode D10,
First high frequency transformer T1, the second high frequency transformer T2 are collectively formed；Its two primary independent main circuit of recommending connects respectively
Input power is connect, and using the control signal of identical timing；The circuit is using the sum of two transformer secondary output leakage inductances as series connection
Resonant inductance.
Further, the switching tube recommended in boosting is the silicon carbide MOSFET of Cree company, model
C3D20060D。
Further, the circuit medium/high frequency transformer T1、T2Select EE55 as magnetic core.
Further, the high frequency transformer T1、T2Frequency is 50kHz, high frequency transformer T1Primary side LP1, LP2
The number of turns with high frequency transformer primary side LP3, LP4 is 2 circles, and secondary side the number of turns is 31 circles.
Further, the high frequency transformer T1、T2Middle primary side winding is all made of 20 strands of the enameled wire of 1.4mm line footpath simultaneously
Around method；Vice-side winding be all made of 2 strands of the enameled wire of 0.8mm line footpath and around.
Further, the full-bridge rectification structure that output rectification module uses Schottky diode to constitute.
A kind of DC boosting method proposed by the present invention,
State 1, Q1, Q3It is connected under zero voltage condition, Q2, Q4Cut-off, input terminal pass through Q1, Q3It is provided to transformer primary side
Energy, while transformer secondary side current passes through D1、D7It powers to the load, also gives filter capacitor C simultaneously6Charging.
State 2 is in dead time, Q1, Q2, Q3, Q4It is off state, the voltage of battery cannot be added to primary side, because
This secondary side can not obtain energy from primary side, then load is by filter capacitor C6Power supply.
State 3, Q1, Q3Shutdown, Q2, Q4Conducting, primary current pass through Q2, Q4Energy, same time-varying are provided to transformer primary side
Depressor secondary current passes through D4, D7It powers to the load, while giving filter capacitor C6Charging；
State 4 is in dead time, Q1, Q2, Q3, Q4It is turned off, the voltage of battery cannot be added to primary side, therefore secondary side
Energy can not be obtained from primary side, then load is by filter capacitor C6Power supply.
Further, if when t=0, Q is flowed through1Electric current be I0, capacitance voltage is ν respectivelyc2(0)=V10, νc3(0)=
V20, at this moment Q1It is switched to off state from state, the course of work of absorbing circuit can be divided into three modes:
Mode 1:D3D is connected5Cut-off
D3Conducting, transformer coil N1The energy of storage will pass through D3Release, while giving C2Charging, 1 circuit of mode it is main
Voltage equation are as follows:
Work as D5After conducting, mode 1 terminates, at this point, t=t1
E=νc1(t1)+νc2(t2)
I.e.
At the end of mode 1, C2And C3On voltage expression be respectively
νc2(t1)=V20
Mode 2:D3、D5It simultaneously turns on
Transformer coil N1In energy pass through D3、D5Power supply is fed back to, while giving C2、C3Charging, some storage
In inductance L2In the middle, inductive current can be expressed as:
In t=t2Moment D3Cut-off is become by conducting, mode 2 terminates.
Mode 3:D3End D5Conducting
D3End D5Conducting, transformer coil N2In energy and inductance L2The energy of storage passes through D5It is fed back to battery,
C is given simultaneously3Charging.The main equation of this mode circuit is:
In t=t3Moment, mode 3 terminate, at this moment inductance L2Electric current be zero and D5Become reverse-biased off state.Entirely
T1Snubber process also terminate simultaneously.T2Snubber process and T1It is identical.
Further, the maximum voltage after above-mentioned snubber circuit is added in power main circuit, on switching tube
Expression formula is represented by Vs,max=2E+Vm, wherein VmIndicate the voltage max of voltage in one cycle.
3, technical effect caused by the present invention.
(1) present invention is a kind of single-phase double push-pull booster circuit based on silicon carbide MOSFET, and prime uses double push-pull liter
Simultaneously snubber circuit is added in volt circuit, and rear class uses full bridge rectifier, low-voltage DC (12V) is chopped into higher straight
Galvanic electricity (about 360V) reduces voltge surge and output harmonic wave composition, preferably solves primary and secondary coupled problem, reduce
Loss, effectively raises efficiency.
(2) present invention is a kind of single-phase double push-pull booster circuit based on silicon carbide MOSFET, to recommending DC boosting portion
The Primary Component divided: high frequency transformer and MOSFET have carried out key design and selection, improve the efficiency of circuit, are effectively improved
Current spike in circuit.
(3) present invention is a kind of single-phase double push-pull booster circuit based on silicon carbide MOSFET, recommends boost module use
Analog control circuit is recommended, recommends analog control circuit output drive signal to booster circuit is recommended, this will reduce cost, mention
High reliability and stability, the use of HPWM modulation technique will greatly reduce the switching loss of MOSFET.
In addition, its advantage is also: half when 1. transformer turns ratio is kept to original single transformer is certain in input voltage
When, secondary voltage is kept to original half, and the voltage obtained after secondary tandem is equal to original voltage.Since the turn ratio reduces, compared with
It solves primary and secondary coupled problem well, reduces loss.2. one timing of output power, flows through switching tube and primary
Electric current all halve.Therefore, the primary copper loss of the conduction loss of single switching transistor and single transformer will be kept to original 1/4,
The primary copper loss of the conduction loss of whole switching tubes and whole transformers will also be kept to original half, effectively raise effect
Rate.
Therefore snubber circuit restrained effectively the voltge surge amount on switching tube.By correctly being inhaled using buffering
Receipts can partly or entirely eliminate this recoil burst pulse.It is added after absorbing circuit, the voltage punching of switching tube in push-pull circuit
It hits and is inhibited with output harmonic wave ingredient, and snubber circuit is also loss-free, therefore the efficiency of inverter obtains
Certain promotion, waveform quality are also improved.
Detailed description of the invention
Fig. 1 is the schematic diagram of typical push-pull type booster circuit；
Fig. 2 is the single-phase double push-pull booster circuit based on silicon carbide MOSFET；
Fig. 3 absorbing circuit operating mode 1；
Fig. 4 absorbing circuit operating mode 2；
Fig. 5 absorbing circuit operating mode 3.
Specific embodiment
Embodiment 1
In conjunction with attached drawing, booster circuit is recommended in a kind of monolithic processor controlled Mobile inverse power source of the present embodiment, has been needed
At 12V DC electricity to the conversion of 360V direct current, output electric current is 5A, rated power 1kW, working frequency 50kHz, environment
Temperature is 0 DEG C -55 DEG C, and allowing temperature rise is 40 DEG C.
Referring to Fig. 1, it is a kind of than more typical push-pull converter circuit, is different from other different circuit structure shapes
Formula, push-pull circuit are and to connect into push-pull amplifier form using two switching tubes.Push-pull circuit, which has, to be driven
Dynamic circuit is simple, switch transformer magnetic core utilization rate is high, output current transient response speed is high, and it is excellent that voltage output characteristics are good etc.
Point.The translation circuit is under the driving of control circuit PWM wave signal, VT1、VT2Two switching tubes constantly replace on-off, by direct current
Input voltage is transformed into ac high frequency pulse voltage, then pulse ac is become high direct voltage by rectified filtering.
But the parameter and driving circuit pulse width due to device are not easy to guarantee its consistency, be easy to cause transformer
Magnetic core bias；And due to the presence of transformer primary side leakage inductance, the moment of power switch tube shutdown, hourglass source electrode can generate larger
Due to voltage spikes, in addition the ripple of input current is larger, thus the volume of input filter is larger.For further booster circuit
Efficiency proposes a kind of double push-pull booster circuit topology, two push-pull transformer primary are simultaneously on the basis of conventional push-pull circuit
Connection, secondary tandem, as shown in Figure 2.
When common push-pull circuit work, due to only one conducting every time of two symmetrical power switch tubes, switch
The conduction loss of pipe is small, high-efficient, and switch transformer magnetic core utilization rate is also higher, is widely used in low-voltage, high-current occasion.
However, being limited by high frequency transformer size, under single phase transformer, push-pull converter power is restricted.Therefore, based on recommending electricity
The working principle on road devises the symmetrical push-pull circuit of two-way, constitutes the main part of DC/DC DC boosting system.Double changes
Transformer circuits primary parallel, two transformers of secondary tandem are instead of single transformer.Two of its primary are independent to push away
It draws main circuit and is separately connected input power, and using the control signal of identical timing.The circuit is leaked using two transformer secondary outputs
The sum of sense is used as series resonance inductor, without additional inductance, maintains but the advantages of transformer circuit.In addition, its advantage is also
Have: half when 1. transformer turns ratio is kept to original single transformer, in one timing of input voltage, secondary voltage is kept to original
Half, the voltage obtained after secondary tandem are equal to original voltage.Since the turn ratio reduces, preferably solves primary and secondary coupling
Problem reduces loss.2. one timing of output power, the electric current for flowing through switching tube and primary all halve.Therefore, individually
The conduction loss of switching tube and the primary copper loss of single transformer will be kept to original 1/4, the conduction loss of whole switching tubes and
The primary copper loss of whole transformers will also be kept to original half, effectively raise efficiency.
In view of the fluctuation of battery voltage, to work normally converter under the input voltage of 10V, transformer secondary output
The number of turns of winding and armature winding is bigger.This, which will lead to, there is the primary and secondary coupling defective tightness of transformer, and loss increase etc. is asked
Topic ultimately causes efficiency decline.It, can using double push-pull circuit structure when single high frequency transformer is unable to reach power requirement
To reduce the power pressure of single transformer.
High frequency transformer play dual parts of in circuit boosting isolation and energy transmission, be in DC voltage booster circuit extremely
Close important a part.So in the design of transformer, using 2 primary parallel connection secondary tandem structures.Traditional
Transformer generally is Industrial Frequency Transformer, and this transformer is excessively heavy, and utilization rate is not high, and one of solution is exactly will
Frequency increases.By the calculation formula of transformer it is found that increasing frequency can reduce volume, therefore high frequency transformer comes into being,
And developed at a gallop.The design of high frequency transformer is most important be exactly magnetic core selection, the performance of magnetic core directly affects
The performance of entire transformer.And the requirement to the performance of magnetic core mainly considers from magnetic flux density, it is desirable that saturation magnetic induction is higher and surplus
Residual magnetism is close relatively low；Secondly consider from power loss；Finally since transformer is used in vehicle-mounted inverter, so electromagnetism interference
Ability is eager to excel.
The transformer parameter of design is as follows:
Transformer input voltage Uin=12V, output voltage Uout=180V, output-current rating I0=5A, the pressure of diode
V dropsdf=0.6V, the efficiency of transformer are η=85%, therefore the output I of each transformer0=5A power are as follows:
Core flux density B can be takenw=0.1T, winding wire current density, J=Kj(AwAe)X, unit A/cm2,
Kj, X is temperature parameter value, and value is 366, -0.12 respectively, and window coefficient of utilization is K0=40%, KfFor form factor, take often
Number 4.The working frequency f of transformersThe core type of=50kHz, transformer can be according to the window area A of magnetic corewWith having for magnetic core
Imitate area AeTo determine.Its ApExpression formula are as follows:
According to Ap, choosing EE55 magnetic core can meet the requirements, the A of magnetic core known to parameter listw=386.34mm2、Ae=
354.00mm2.By Aw、AeValue bring formula J=K intoj(AwAe)XCurrent density can be acquired are as follows:
J=Kj(AwAe)x
=366 × (386.34 × 10-2×354.00×10-2)-0.12
=267.40 (A/cm2)
Line group is as follows around diameter and turns calculations:
Armature winding line footpath area:
Armature winding turns calculations:
Secondary windings line footpath area:
Secondary winding turns calculate:
Consider armature winding the number of turns it is less, in order to reduce leakage inductance, using 1.4mm line footpath 20 strands of enameled wire and around side
Method；Secondary using 0.8mm line footpath 2 strands of enameled wire and around method.
In modern technologies, due to the limitation of these aspect practical applications such as voltage, power tolerance, many silicon-based devices can only
Requirement is reached using device series and parallel technology and complicated circuit topology, in this way, inevitably cause device cost and
Failure rate all greatly increases, these application requirements also largely constrain power electronic technique in the power system abundant
Using.Therefore, it in order to improve the performance of device to meet the requirement of practical application, is partly led using new device architecture and broad stopband
Body material becomes the irresistible new development trend of current power electronic devices.Compared with silicon-based power semiconductor devices and
There is high heat conductance, broad-band gap, elevated operating temperature, high chemical stability, high avalanche critical to hit for speech, SiC power semiconductor
The advantages that wearing electric field and Flouride-resistani acid phesphatase.Due to these characteristics having, so that SiC power semiconductor is particularly suitable for power electronics
Requirement of the technology to operating conditions such as high-power, high frequency, high temperature, high voltage, Flouride-resistani acid phesphatases, SiC power device become electric power electricity
The first choice " successor " of subdomains silicon-based power devices.Simultaneously because lower switching loss and conduction loss SiC power device
Also it is known as " green energy resource " power device of field of semiconductor devices.
There is smaller internal resistance and dielectric constant compared to silicon materials silicon carbide, so that the inversion based on SiCMOSFET
Device not only can reduce itself conduction loss and cut-off loss, improves the performance of inverter, improves the power density of device, may be used also
So that the safety and reliability of DC-to-AC converter is greatly improved.And with manufacture craft continuously improve with increasingly
It is perfect, it is substantially reduced by the production cost of the New Type Power Devices of representative of SiC MOSFET, this pushes away it largely
Into the development for taking SiC material as basic inverter.Therefore MOSFET selects the Cree company model to be in the present embodiment
The SiC MOSFET of C3D20060D, proof voltage VDSS are 600V, are able to satisfy the DC input voitage of the device.Use silicon carbide
The MOSFET of material has higher pressure voltage and working frequency, and the efficiency of whole system can be made to be improved, can be from Si device
Average operation improved efficiency of the inverter close to 96% can make inverter losses reduce by 25% to 97.5%.
One of the parameter that should mainly consider for push-pull dc-to-ac, in design is exactly the voltage drop on switching tube.According to
Analysis, if circuit works in pure hard switching state and without buffer protection measure, switch is when by being conducting to cut-off switching
A very big shock pulse will be will appear, after above-mentioned snubber circuit is added in power main circuit, switch
Maximum voltage expression formula on pipe is represented by Vs,max=2E+Vm, wherein VmIndicate that the voltage of voltage in one cycle is maximum
Value.Therefore snubber circuit restrained effectively the voltge surge amount on switching tube.By correctly using snubber can
Partly or entirely to eliminate this recoil burst pulse.Be added absorbing circuit after, in push-pull circuit the voltge surge of switching tube with
Output harmonic wave ingredient is inhibited, and snubber circuit is also loss-free, therefore the efficiency of inverter has obtained one
Fixed promotion, waveform quality are also improved.
The bridge rectifier structure that the rear class output of main circuit is constituted using Schottky diode, bridge rectifier can reduce individually
The backward voltage stress of diode.When alternating voltage is in forward voltage, diode VD1~VD4Conducting, electric current is from diode
VD1~VD4It flows through, by load resistance to capacitor C6Charging, when alternating voltage is in negative half-cycle, diode VD2、VD3It leads
Logical, power supply passes through diode VD2、VD3, load to capacitor C6Charging.After periodically working, final output voltage is through electricity
Hold C6DC voltage is obtained after filtering.
Analog control circuit control is recommended in the booster circuit use of recommending of main circuit prime, generates drive waveforms to recommending liter
Volt circuit, and the output voltage for recommending booster circuit is sampled and carries out closed-loop control, the direct current 12V of automobile storage battery is boosted and is risen
To the direct current of 380V.Novel HPWM modulation system is generated using analog chip, is realized ZVS soft switch technique, is subtracted significantly
The switching loss of few MOSFET.
In a switch periods, this patent to recommend the booster circuit course of work as follows:
State 1, Q1, Q3It is connected under zero voltage condition, Q2, Q4Cut-off, input terminal pass through Q1, Q3It is provided to transformer primary side
Energy, while transformer secondary side current passes through D1、D7It powers to the load, also gives filter capacitor C simultaneously6Charging；
State 2 is in dead time, Q1, Q2, Q3, Q4It is off state, the voltage of battery cannot be added to primary side, because
This secondary side can not obtain energy from primary side, then load is by filter capacitor C6Power supply.
State 3, Q1, Q3Shutdown, Q2, Q4Conducting, primary current pass through Q2, Q4Energy, same time-varying are provided to transformer primary side
Depressor secondary current passes through D4, D7It powers to the load, while giving filter capacitor C6Charging；
State 4 is in dead time, Q1, Q2, Q3, Q4It is turned off, the voltage of battery cannot be added to primary side, therefore secondary side
Energy can not be obtained from primary side, then load is by filter capacitor C6Power supply.
The snubber circuit of this patent takes a push-pull circuit to be analyzed, and the course of work is as follows:
If when t=0, flowing through Q1Electric current be I0, capacitance voltage is ν respectivelyc2(0)=V10, νc3(0)=V20, at this moment Q1From
On state is switched to off state, and the course of work of absorbing circuit can be divided into three modes:
Mode 1:D3D is connected5Cut-off
Under this mode, D3Conducting, transformer coil N1The energy of storage will pass through D3Release, while giving C2Charging, charging
Circuit is as shown in Fig. 3 thickened portion.The mains voltage equation of 1 circuit of mode are as follows:
Work as D5After conducting, mode 1 terminates, at this point, t=t1
E=νc1(t1)+νc2(t2)
I.e.
At the end of mode 1, C2And C3On voltage expression be respectively
νc2(t1)=V20
Mode 2:D3、D5It simultaneously turns on
Under this mode, transformer coil N1In energy pass through D3、D5Power supply is fed back to, while giving C2、C3Charging, there are also one
Part is stored in inductance L2In the middle.As shown in Fig. 4 thickened portion, inductive current can be expressed as current path in this mode:
In t=t2Moment D3Cut-off is become by conducting, mode 2 terminates.
Mode 3:D3End D5Conducting
D under this mode3End D5Conducting, transformer coil N2In energy and inductance L2The energy of storage passes through D5To electric power storage
Pond feedback, while giving C3Charging.The main equation of this mode circuit is:
In t=t3Moment, mode 3 terminate, at this moment inductance L2Electric current be zero and D5Become reverse-biased off state, such as Fig. 5
Shown in thickened portion.Entire T1Snubber process also terminate simultaneously.T2Snubber process and T1It is identical.
Snubber circuit acts on of both mainly having for power circuit: (1) reducing the voltge surge on switch；
(2) output harmonic wave composition is reduced.
The above embodiment is a preferred embodiment of the present invention, but embodiments of the present invention are not by above-described embodiment
Limitation, other any changes, modifications, substitutions, combinations, simplifications made without departing from the spirit and principles of the present invention,
It should be equivalent substitute mode, be included within the scope of the present invention.
Claims (10)
1. a kind of single-phase double push-pull booster circuit based on silicon carbide MOSFET, it is characterised in that: prime is electric using boosting is recommended
Lu Bingyong simulation is recommended control circuit and is controlled, and rear class uses full bridge rectifier；Push-pull circuit uses two switching tubes,
And push-pull amplifier is connected into, and two push-pull transformer primary parallels, secondary tandem；Translation circuit is in control circuit
Under the driving of PWM wave signal, two switching tubes constantly replace on-off, and DC input voitage is transformed into ac high frequency pulse electricity
Pulse ac is become high direct voltage by pressure, then rectified filtering.
2. the single-phase double push-pull booster circuit according to claim 1 based on silicon carbide MOSFET, it is characterised in that: described
Recommend in booster circuit DC/DC DC boosting system by first switch tube Q1, second switch Q2, third switching tube Q3,
Four switching tube Q4, first diode D1, the second diode D4, third diode D7, the 4th diode D10, the first high frequency transformation
Device T1, the second high frequency transformer T2 are collectively formed；Its two primary independent main circuit of recommending is separately connected input power, and
Using the control signal of identical timing；The circuit is using the sum of two transformer secondary output leakage inductances as series resonance inductor.
3. the single-phase double push-pull booster circuit according to claim 2 based on silicon carbide MOSFET, it is characterised in that: described
Recommend the silicon carbide MOSFET that the switching tube in boosting is Cree company, model C3D20060D.
4. the single-phase double push-pull booster circuit according to claim 2 based on silicon carbide MOSFET, it is characterised in that: high frequency
Transformer T1、T2Select EE55 as magnetic core.
5. the single-phase double push-pull booster circuit according to claim 4 based on silicon carbide MOSFET, it is characterised in that: described
High frequency transformer T1、T2Frequency is 50kHz, high frequency transformer T1Primary side LP1, LP2 and high frequency transformer primary side LP3,
The number of turns of LP4 is 2 circles, and secondary side the number of turns is 31 circles.
6. the single-phase double push-pull booster circuit according to claim 5 based on silicon carbide MOSFET, it is characterised in that: described
High frequency transformer T1、T2Middle primary side winding be all made of 20 strands of the enameled wire of 1.4mm line footpath and around method；Vice-side winding is adopted
With 2 strands of the enameled wire of 0.8mm line footpath and around.
7. the single-phase double push-pull booster circuit according to claim 1 based on silicon carbide MOSFET, it is characterised in that: output
The full-bridge rectification structure that rectification module uses Schottky diode to constitute.
8. a kind of DC boosting method of booster circuit according to claim 2, it is characterised in that:
State 1, Q1, Q3It is connected under zero voltage condition, Q2, Q4Cut-off, input terminal pass through Q1, Q3Energy is provided to transformer primary side
Amount, while transformer secondary side current passes through D1、D7It powers to the load, also gives filter capacitor C simultaneously6Charging；
State 2 is in dead time, Q1, Q2, Q3, Q4It is off state, the voltage of battery cannot be added to primary side, therefore secondary
Side can not obtain energy from primary side, then load is by filter capacitor C6Power supply；
State 3, Q1, Q3Shutdown, Q2, Q4Conducting, primary current pass through Q2, Q4Energy, while transformer are provided to transformer primary side
Secondary current passes through D4, D7It powers to the load, while giving filter capacitor C6Charging；
State 4 is in dead time, Q1, Q2, Q3, Q4It is turned off, the voltage of battery cannot be added to primary side, therefore secondary side is not yet
Energy can be obtained from primary side, then load is by filter capacitor C6Power supply.
9. DC boosting method according to claim 8, it is characterised in that:
If when t=0, flowing through Q1Electric current be I0, capacitance voltage is ν respectivelyc2(0)=V10, νc3(0)=V20, at this moment Q1From conducting
State is switched to off state, and the course of work of absorbing circuit can be divided into three modes:
Mode 1:D3D is connected5Cut-off
D3Conducting, transformer coil N1The energy of storage will pass through D3Release, while giving C2Charging, the mains voltage of 1 circuit of mode
Equation are as follows:
Work as D5After conducting, mode 1 terminates, at this point, t=t1
E=νc1(t1)+νc2(t2)
I.e.
At the end of mode 1, C2And C3On voltage expression be respectively
νc2(t1)=V20
Mode 2:D3、D5It simultaneously turns on
Transformer coil N1In energy pass through D3、D5Power supply is fed back to, while giving C2、C3Charging, some is stored in electricity
Feel L2In the middle, inductive current can be expressed as:
In t=t2Moment D3Cut-off is become by conducting, mode 2 terminates；
Mode 3:D3End D5Conducting
D3End D5Conducting, transformer coil N2In energy and inductance L2The energy of storage passes through D5It is fed back to battery, simultaneously
To C3Charging；The main equation of this mode circuit is:
In t=t3Moment, mode 3 terminate, at this moment inductance L2Electric current be zero and D5Become reverse-biased off state；Entire T1It is slow
It rushes absorption process also while terminating, T2Snubber process and T1It is identical.
10. DC boosting method according to claim 9, it is characterised in that: above-mentioned snubber circuit is added to function
After in rate main circuit, the maximum voltage expression formula on switching tube is represented by Vs,max=2E+Vm, wherein VmIndicate voltage one
Voltage max in a period.
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| CN111277137A (en) * | 2020-03-16 | 2020-06-12 | 云南电网有限责任公司电力科学研究院 | DCDC converter |
| CN111965402A (en) * | 2020-07-10 | 2020-11-20 | 重庆大学 | Portable impact impedance measuring device |
| CN112332503A (en) * | 2020-10-19 | 2021-02-05 | 西安电子科技大学芜湖研究院 | Silicon carbide power charging control system, method, medium, equipment and application |
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