CN113651599A - Gallate microwave dielectric ceramic with low dielectric constant and high quality factor and preparation method thereof - Google Patents

Abstract

The invention discloses a dielectric constant epsilon_rBetween 9.1 and 12.3, the product of quality factor and resonant frequency (Qxf) is between 20,744 and 90,197GHz, and the temperature coefficient of resonant frequency (tau)_f) A novel gallate microwave dielectric ceramic with low dielectric constant and high quality factor at minus 37.7 to minus 21.7 ppm/DEG C and a preparation method thereof, which belong to the technical field of microwave dielectric ceramic preparation, and the chemical composition of the gallate microwave dielectric ceramic is Ca₃SnAGa₃O₁₂(a ═ Nb, Sb, Ta). The novel gallate microwave dielectric ceramic disclosed by the invention is simple in chemical composition and preparation process, and can be applied to the manufacture of microwave devices such as dielectric resonators, microwave integrated circuit substrates and the like.

Description

Gallate microwave dielectric ceramic with low dielectric constant and high quality factor and preparation method thereof

Technical Field

The invention relates to a dielectric ceramic material of microwave components such as a dielectric substrate, a resonator, a waveguide loop and the like used at microwave frequency and a preparation method thereof.

Background

With the rapid development of modern communications such as 5G communications technology, communications network technology and satellite communications, the demands for miniaturization, low loss, low cost and high stability of modern communications technology materials are further increased. Microwave dielectric ceramic is used as a core component of modern communication technology due to excellent dielectric constant, high quality factor and low resonant frequency temperature systemThe microwave electronic components such as a dielectric resonator/filter, a dielectric antenna, a dielectric guided wave loop and the like are widely applied to microwave communication systems such as mobile communication, satellite communication, a global satellite positioning system, Bluetooth equipment, a wireless local area network and the like. The microwave dielectric ceramic with low relative dielectric constant, high quality factor and near-zero temperature coefficient of resonance frequency has become one of the research hotspots in recent years due to its fast signal propagation speed, low loss and excellent frequency-selecting characteristic, and the design and development of a novel microwave dielectric ceramic material with excellent microwave dielectric property is the core of the rapid development of modern 5G communication technology. Having Ca₃A₂R₃O₁₂The ceramics of the formula show excellent microwave dielectric properties, such as Ca₃Sn₂(SiGa₂)O₁₂Having a dielectric constant close to 10 and a quality factor of-100,000 GHz, wherein the A site is Sn⁴⁺Ordered arrangement of Ga in R position³⁺With Si⁴⁺Occupy the space together, realize the common occupation of non-equivalent elements on the A site, and the R site only contains Ga³⁺Whether the ordered gallate has excellent microwave dielectric properties or not is yet researched, and the design and the development of more gallate microwave dielectric ceramic materials with excellent microwave dielectric properties can realize wider selectivity for the application of microwave frequency band electronic components.

Disclosure of Invention

The invention aims to provide a novel gallate microwave dielectric ceramic with low dielectric constant and high quality factor and a preparation method thereof.

The invention relates to a chemical composition of gallate microwave dielectric ceramic with low dielectric constant and high quality factor, which comprises the following components: ca₃SnAGa₃O₁₂Where a is Nb, Sb, Ta.

The low-dielectric-constant high-quality factor gallate microwave dielectric ceramic is prepared by the following steps:

(1) mixing CaCO₃(99％)，SnO₂(99.5％)，Nb₂O₅(99.99％)，Sb₂O₅(99％)，Ta₂O₅(99.99％)，Ga₂O₃(99.99%) dried powder as Ca₃SnAGa₃O₁₂(A＝Nb,Sb,Ta) weighing and proportioning the chemical formula;

(2) mixing the raw materials in the step (1), wet-type hand-grinding for 1-2 hours, drying the raw materials by using absolute ethyl alcohol, and presintering the raw materials for 8 hours at 1280 ℃ in an atmosphere;

(3) compacting the powder obtained in step (2) to obtain Ca₃SnNbGa₃O₁₂And Ca₃SnSbGa₃O₁₂Sintering at 1360 deg.C for 8 hr to obtain Ca powder₃SnTaGa₃O₁₂Sintering at 1450 deg.C for 8 hr.

The gallate microwave dielectric ceramic Ca with low dielectric constant and high quality factor prepared by the invention₃SnAGa₃O₁₂(A ═ Nb, Sb, Ta), simple in preparation process, and low in dielectric constant (9.1. ltoreq. epsilon.)_rLess than or equal to 12.3) and high quality factor (20,744 GHz)<Q×f<90,197GHz), and the temperature coefficient of the resonance frequency is-37.7 ppm/DEG C ≦ tau_fLess than or equal to-21.7 ppm/DEG C, and can meet the application requirements of low dielectric constant type dielectric substrate communication electronic components.

Drawings

FIG. 1 is an X-ray diffraction pattern of 3 examples of the present invention

Detailed Description

Table 1 shows 3 specific examples of the invention and their microwave dielectric properties. The preparation method was as described above, phase analysis was performed on the sintered ceramic sample by the powder X-ray diffraction method, and FIG. 1 is an X-ray diffraction pattern of examples 1, 2 and 3, showing that a single phase was formed, and the microwave dielectric properties were evaluated by the cylindrical dielectric resonator method.

The present invention is by no means limited to the above embodiments. The composition, the upper limit and the lower limit of the sintering temperature and the range value can realize the invention, and the embodiments are not listed.

The invention can be widely used for manufacturing microwave devices such as various dielectric substrates, resonators/filters and the like, and can meet the technical requirements of systems such as mobile communication, satellite communication, global satellite positioning systems, Bluetooth equipment, wireless local area networks and the like.

Table 1:

Claims (2)

1. the invention discloses a dielectric constant epsilon_rBetween 9.1 and 12.3, the product of quality factor and resonant frequency (Qxf) is between 20,744 and 90,197GHz, and the temperature coefficient of resonant frequency (tau)_f) A novel gallate microwave dielectric ceramic with low dielectric constant and high quality factor at minus 37.7 to minus 21.7 ppm/DEG C and a preparation method thereof, which belong to the technical field of microwave dielectric ceramic preparation, and the chemical composition of the gallate microwave dielectric ceramic is Ca₃SnAGa₃O₁₂(A＝Nb,Sb,Ta)。

2. The microwave dielectric ceramic of claim 1 prepared by the steps of:

(1) mixing CaCO₃(99％)，SnO₂(99.5％)，Nb₂O₅(99.99％)，Sb₂O₅(99％)，Ta₂O₅(99.99％)，Ga₂O₃(99.99%) dried powder as Ca₃SnAGa₃O₁₂Weighing and batching the chemical formula (A ═ Nb, Sb and Ta);

(2) mixing the raw materials in the step (1), wet-type hand-grinding for 1-2 hours, drying the raw materials by using absolute ethyl alcohol, and presintering the raw materials for 8 hours at 1280 ℃ in an atmosphere;

(3) compacting the powder obtained in step (2) to obtain Ca₃SnNbGa₃O₁₂And Ca₃SnSbGa₃O₁₂Sintering at 1360 deg.C for 8 hr to obtain Ca powder₃SnTaGa₃O₁₂Sintering at 1450 deg.C for 8 hr.

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