CN103539444A - Low temperature sintering microwave dielectric ceramic Ca2Bi2O5 and preparation method thereof - Google Patents

Low temperature sintering microwave dielectric ceramic Ca2Bi2O5 and preparation method thereof Download PDF

Info

Publication number
CN103539444A
CN103539444A CN201310453924.2A CN201310453924A CN103539444A CN 103539444 A CN103539444 A CN 103539444A CN 201310453924 A CN201310453924 A CN 201310453924A CN 103539444 A CN103539444 A CN 103539444A
Authority
CN
China
Prior art keywords
hours
ca2bi2o5
dielectric ceramic
preparation
microwave dielectric
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN201310453924.2A
Other languages
Chinese (zh)
Other versions
CN103539444B (en
Inventor
李洁
方亮
唐莹
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Suzhou Hongwu Technology Intermediary Service Co.,Ltd.
Original Assignee
Guilin University of Technology
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Guilin University of Technology filed Critical Guilin University of Technology
Priority to CN201310453924.2A priority Critical patent/CN103539444B/en
Publication of CN103539444A publication Critical patent/CN103539444A/en
Application granted granted Critical
Publication of CN103539444B publication Critical patent/CN103539444B/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Abstract

The invention discloses low temperature sintering microwave dielectric ceramic Ca2Bi2O5 and a preparation method thereof. Composition of the low temperature sintering microwave dielectric ceramic is Ca2Bi2O5. The preparation method comprises the following steps: (1) weighing and dosing original powder of CaCO3 and Bi2O3 with the purity over 99.9% according to the chemical formula Ca2Bi2O5; (2) wet-type ball-milling and mixing the raw material in step (1) for 12 hours, wherein the solvent is distilled water, and drying and pre-sintering for 6 hours in atmosphere at 750 DEG C; and (3) adding a binder into the powder prepared in step (2) and prilling, then, pressing to mould, and finally, sintering for 4 hours in atmosphere at 820-850 DEG C, wherein the binder is polyvinyl alcohol liquor with mass concentration of 5%, and the dose accounts for 3% of total weight of the powder. The ceramic disclosed by the invention is well sintered at 820-850 DEG C, and the dielectric constant reaches 1-20, the quality factor Qf value reaches 62000-89000GHz and the temperature coefficient of resonance frequency is small. The ceramic has an extremely huge application value in industry.

Description

Low-temperature sintered microwave dielectric ceramic Ca 2bi 2o 5and preparation method thereof
Technical field
The present invention relates to dielectric ceramic material, particularly relate to microwave dielectric ceramic material of the microwave devices such as medium substrate, resonator and wave filter that use in microwave frequency and preparation method thereof.
Background technology
Microwave dielectric ceramic refers to and is applied in microwave frequency band (being mainly UHF, SHF frequency range) circuit as dielectric material and completes the pottery of one or more functions, in modern communication, be widely used as the components and parts such as resonator, wave filter, dielectric substrate and medium guided wave loop, it is the key foundation material of modern communication technology, at aspects such as portable mobile phone, automobile telephone, cordless telephone, telestar susceptor and military radars, there is very important application, in the miniaturization of modern communication instrument, integrated process, just bringing into play increasing effect.
Be applied to the dielectric ceramic of microwave frequency band, should meet the requirement of following dielectric characteristics: (1) seriation DIELECTRIC CONSTANT ε rto adapt to the requirement of different frequency and different application occasion; (2) high quality factor q value or dielectric loss tan δ are to reduce noise, general requirement Qf>=3000 GHz; (3) the temperature factor τ of resonant frequency ?the as far as possible little thermostability to guarantee that device has had, general requirement-10/ ℃≤τ ?≤+10 ppm/ ℃.From late 1930s, just someone attempts dielectric substance to be applied to microwave technology in the world.
According to relative permittivity ε rsize from use the different of frequency range, conventionally the microwave dielectric ceramic being developed He developing can be divided into 4 classes.
(1) ultralow dielectric microwave dielectric ceramic, main representative is Al 2o 3-TiO 2, Y 2baCuO 5, MgAl 2o 4and Mg 2siO 4deng, its ε r≤ 20, quality factor q * f>=50000GHz, τ ?≤ 10 ppm/ ° C.Be mainly used in microwave base plate and high-end microwave device.
(2) low ε rwith the microwave dielectric ceramic of high Q value, be mainly BaO-MgO-Ta 2o 5, BaO-ZnO-Ta 2o 5or BaO-MgO-Nb 2o 5, BaO-ZnO-Nb 2o 5system or the composite system MWDC material between them.Its ε r=25~30, Q=(1~2) * 10 4(under the GHz of f>=10), τ ?≈ 0.Be mainly used in the microwave communication equipments such as direct broadcasting satellite of f >=8 GHz as dielectric resonance device.
(3) medium ε rwith the microwave dielectric ceramic of Q value, be mainly with BaTi 4o 9, Ba 2ti 9o 20(Zr, Sn) TiO 4deng the MWDC material that is base, its ε r=35 ~ 40, Q=(6~9) * 10 3(under f=3~-4GHz), τ ?≤ 5 ppm/ ° C.Be mainly used in microwave military radar in 4~8 GHz range of frequency and communication system as dielectric resonance device.
(4) high ε rand the lower microwave dielectric ceramic of Q value is mainly used in civilian mobile communcations system in 0.8~4GHz range of frequency, this is also the emphasis of microwave dielectric ceramic research.Since the eighties, the people such as Kolar, Kato find and have studied perovskite-like tungsten bronze type BaO-Ln in succession 2o 3-TiO 2series (Ln=La, Sm, Nd or Pr etc. are called for short BLT system), complex perovskite structure CaO-Li 2o-Ln 2o 3-TiO 2series, lead base series material, Ca 1-xln 2x/3tiO 3be contour ε rmicrowave dielectric ceramic, the wherein BaO-Nd of BLT system 2o 3-TiO 2material dielectric constant reaches 90, lead base series (Pb, Ca) ZrO 3specific inductivity reaches 105.
The sintering temperature of these material systems is generally higher than 1300 ° of C above, can not be directly and the low melting point metal such as Ag and Cu burn altogether formation laminated ceramic capacitor.In recent years, along with LTCC Technology (Low Temperature Co-fired Ceramics, the requirement of development LTCC) and the development of microwave multilayer device, researchist both domestic and external has carried out exploring widely and studying to some low fever's system materials, mainly to adopt devitrified glass or glass-ceramic composite system, because low melting glass has relatively high dielectric loss mutually, the existence of glassy phase has improved the dielectric loss of material greatly.Therefore development is the emphasis of current research without the low fired microwave dielectric ceramic material of glassy phase, low temperature sintering high performance microwave media ceramic system is still very limited at present, and this has limited the development of low temperature co-fired technology and microwave multilayer device to a great extent.
Summary of the invention
The object of this invention is to provide a kind of have low-loss and good temperature stability, high-frequency dielectric constant reaches 19 ~ 20, Qf value up to 62000-89000GHz simultaneously, can be at microwave dielectric ceramic of 820-850 ℃ of sintering and preparation method thereof.
The chemical constitution formula of microwave dielectric ceramic of the present invention is: Ca 2bi 2o 5.
Preparation method's concrete steps of described microwave dielectric ceramic are:
(1) by purity, be more than 99.9% CaCO 3and Bi 2o 3starting powder press Ca 2bi 2o 5chemical formula weigh batching.
(2) step (1) raw material wet ball-milling is mixed 12 hours, solvent is distilled water, pre-burning 6 hours in 750 ℃ of air atmosphere after oven dry.
(3) in the powder making in step (2), add after binding agent granulation, then compression moulding, finally sintering 4 hours in 820 ~ 850 ℃ of air atmosphere; Described binding agent adopts the polyvinyl alcohol solution that mass concentration is 5%, and dosage accounts for 3% of powder total mass.
Therefore pottery prepared by the present invention is good at 720-750 ℃ of sintering, and its specific inductivity reaches 19~20, and quality factor q f value is up to 62000 ~ 89000GHz, and temperature coefficient of resonance frequency is little, has a great using value industrial.
Embodiment
Embodiment:
Table 1 shows 3 specific embodiments and the microwave dielectric property thereof that forms different sintering temperatures of the present invention.Its preparation method as mentioned above, carries out the evaluation of microwave dielectric property by cylindrical dielectric resonator method.
The present invention is never limited to above embodiment.The bound of sintering temperature, interval value can realize the present invention, at this, do not enumerate embodiment.
This pottery can be widely used in the manufacture of the microwave devices such as various medium substrates, resonator and wave filter, can meet the Technology Need of the systems such as mobile communication, satellite communications.
Table 1:
Figure 2013104539242100002DEST_PATH_IMAGE001

Claims (1)

1. composite oxides are as an application for low-temperature sintered microwave dielectric ceramic, and the chemical constitution formula that it is characterized in that described composite oxides is Ca 2bi 2o 5:
Preparation method's concrete steps of described composite oxides are:
(1) by purity, be more than 99.9% CaCO 3and Bi 2o 3starting powder press Ca 2bi 2o 5chemical formula weigh batching;
(2) step (1) raw material wet ball-milling is mixed 12 hours, solvent is distilled water, pre-burning 6 hours in 750 ℃ of air atmosphere after oven dry;
(3) in the powder making in step (2), add after binding agent granulation, then compression moulding, finally sintering 4 hours in 820 ~ 850 ℃ of air atmosphere; Described binding agent adopts the polyvinyl alcohol solution that mass concentration is 5%, and dosage accounts for 3% of powder total mass.
CN201310453924.2A 2013-09-29 2013-09-29 Low-temperature sintered microwave dielectric ceramic Ca 2bi 2o 5and preparation method thereof Active CN103539444B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201310453924.2A CN103539444B (en) 2013-09-29 2013-09-29 Low-temperature sintered microwave dielectric ceramic Ca 2bi 2o 5and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201310453924.2A CN103539444B (en) 2013-09-29 2013-09-29 Low-temperature sintered microwave dielectric ceramic Ca 2bi 2o 5and preparation method thereof

Publications (2)

Publication Number Publication Date
CN103539444A true CN103539444A (en) 2014-01-29
CN103539444B CN103539444B (en) 2015-11-25

Family

ID=49963359

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201310453924.2A Active CN103539444B (en) 2013-09-29 2013-09-29 Low-temperature sintered microwave dielectric ceramic Ca 2bi 2o 5and preparation method thereof

Country Status (1)

Country Link
CN (1) CN103539444B (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104402438A (en) * 2014-11-21 2015-03-11 桂林理工大学 Temperature-stable and ultralow-dielectric constant microwave dielectric ceramic Ca2LaBO5
CN104446375A (en) * 2014-11-15 2015-03-25 桂林理工大学 Temperature-stable ultralow dielectric constant microwave dielectric ceramic BaLa0.8Nd1.2B10O19
CN105523756A (en) * 2016-02-17 2016-04-27 桂林理工大学 Microwave dielectric ceramic Ca3Bi2Ge3O12 with low loss and low dielectric constant and preparation method of microwave dielectric ceramic Ca3Bi2Ge3O12
CN105645949A (en) * 2016-01-13 2016-06-08 三峡大学 Temperature-stable low-dielectric-constant microwave dielectric ceramic Ca3Bi2Ge3O12 and preparation method thereof

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101654564A (en) * 2008-08-23 2010-02-24 比亚迪股份有限公司 Plastic composition and surface selective metallization process thereof
US20100155218A1 (en) * 2008-12-12 2010-06-24 University Of South Carolina Novel Photocatalysts that Operate Under Visible Light

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101654564A (en) * 2008-08-23 2010-02-24 比亚迪股份有限公司 Plastic composition and surface selective metallization process thereof
US20100155218A1 (en) * 2008-12-12 2010-06-24 University Of South Carolina Novel Photocatalysts that Operate Under Visible Light

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
P.ABRMAN ETAL.: "Heat capacity of mixed oxides in the Bi2O3-CaO system", 《THERMOCHIMICA ACTA》 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN104446375A (en) * 2014-11-15 2015-03-25 桂林理工大学 Temperature-stable ultralow dielectric constant microwave dielectric ceramic BaLa0.8Nd1.2B10O19
CN104446375B (en) * 2014-11-15 2016-08-17 桂林理工大学 Temperature-stable ultralow dielectric microwave dielectric ceramic BaLa0.8nd1.2b10o19
CN104402438A (en) * 2014-11-21 2015-03-11 桂林理工大学 Temperature-stable and ultralow-dielectric constant microwave dielectric ceramic Ca2LaBO5
CN105645949A (en) * 2016-01-13 2016-06-08 三峡大学 Temperature-stable low-dielectric-constant microwave dielectric ceramic Ca3Bi2Ge3O12 and preparation method thereof
CN105523756A (en) * 2016-02-17 2016-04-27 桂林理工大学 Microwave dielectric ceramic Ca3Bi2Ge3O12 with low loss and low dielectric constant and preparation method of microwave dielectric ceramic Ca3Bi2Ge3O12

Also Published As

Publication number Publication date
CN103539444B (en) 2015-11-25

Similar Documents

Publication Publication Date Title
CN103496964B (en) Low-temperature sintering microwave dielectric ceramic Ca3Bi(PO4)3 and preparation method thereof
CN103496978B (en) Low-temperature sintering microwave dielectric ceramic Ba2BiV3O11 and preparation method thereof
CN102249670A (en) Low temperature sintered microwave dielectric ceramic Li2Ba1-xSrxTi4O16 and preparation method thereof
CN103496973A (en) Low temperature sintered microwave dielectric ceramic BiTiNbO6 and preparation method thereof
CN103570345A (en) Low-temperature sintering microwave dielectric ceramic Bi12MgO19 and preparation method thereof
CN103467095A (en) Low-temperature sinterable microwave dielectric ceramic SrCuV2O7 and preparation method thereof
CN103496981A (en) Low-temperature sintering temperature-stable microwave dielectric ceramic Bi14W2O27 and preparation method thereof
CN103553612A (en) Microwave dielectric ceramic Ba6W2V2O17 capable of being sintered at low temperature and preparation method thereof
CN103496979A (en) Low-temperature sintering microwave dielectric ceramic La3Cu2VO9 and preparation method thereof
CN103539444B (en) Low-temperature sintered microwave dielectric ceramic Ca 2bi 2o 5and preparation method thereof
CN103319177B (en) Microwave dielectric ceramic Ba3WTiO8 with low-temperature sintering characteristic and preparation method thereof
CN103193483B (en) Low-temperature sintering tungstate microwave dielectric ceramic Li3R3W2O12 and preparation method thereof
CN103553613A (en) Microwave dielectric ceramic BaV2Nb2O11 capable of sintering at low temperature and preparation method thereof
CN103539449A (en) Microwave dielectric ceramic BiNbW2O10 capable of being sintered at low temperature and preparation method thereof
CN103524126B (en) Low-temperature sintering microwave dielectric ceramic CaBi2O4 and preparation method thereof
CN103496969B (en) Low-temperature sintering temperature-stable microwave dielectric ceramic Bi14WO24 and preparation method thereof
CN103922719A (en) Low-temperature sintering available microwave dielectric ceramic TiP2O7 with ultralow dielectric constant and preparation method thereof
CN103496972B (en) Ultralow sintering temperature stable type microwave dielectric ceramic Ca5Bi14O26 and preparation method thereof
CN103449814B (en) Low-temperature-sintering available microwave dielectric ceramic Sr2WCuO6
CN103553614B (en) Microwave dielectric ceramic La7Nb3Mo4O30 capable of being sintered at low temperature and preparation method thereof
CN103496742B (en) Low temperature sintered microwave dielectric ceramic Ca3Bi4V2O14 and preparation method thereof
CN103496986A (en) Low temperature sintered microwave dielectric ceramic BiCa9V7O28 and preparation method thereof
CN103435348B (en) Low-temperature sintered microwave dielectric ceramic Sr8CuW3O18 and preparation method thereof
CN103964835B (en) Low temperature sintering temperature-stable microwave dielectric ceramic LiVP 2o 8and preparation method thereof
CN103496971B (en) Low temperature sintered microwave dielectric ceramic Ca4Bi6O13 and preparation method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
TR01 Transfer of patent right

Effective date of registration: 20201225

Address after: 215600 room a1307, 109 Shazhou West Road, yangshe Town, Zhangjiagang City, Suzhou City, Jiangsu Province

Patentee after: Suzhou Hongwu Technology Intermediary Service Co.,Ltd.

Address before: The Guangxi Zhuang Autonomous Region city built Guilin Road No 12 Guilin University of Technology

Patentee before: GUILIN University OF TECHNOLOGY

TR01 Transfer of patent right