CN113651289A - Manufacturing method of sucker structure forming die and manufacturing method of sucker structure - Google Patents
Manufacturing method of sucker structure forming die and manufacturing method of sucker structure Download PDFInfo
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- CN113651289A CN113651289A CN202110768773.4A CN202110768773A CN113651289A CN 113651289 A CN113651289 A CN 113651289A CN 202110768773 A CN202110768773 A CN 202110768773A CN 113651289 A CN113651289 A CN 113651289A
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- 238000004519 manufacturing process Methods 0.000 title claims description 18
- 238000000034 method Methods 0.000 claims abstract description 44
- 239000000758 substrate Substances 0.000 claims abstract description 27
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 24
- 239000010703 silicon Substances 0.000 claims abstract description 24
- 239000002086 nanomaterial Substances 0.000 claims abstract description 21
- 238000006056 electrooxidation reaction Methods 0.000 claims abstract description 14
- 238000002360 preparation method Methods 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims description 22
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 14
- 239000000243 solution Substances 0.000 claims description 13
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 7
- 239000002184 metal Substances 0.000 claims description 7
- 238000003491 array Methods 0.000 claims description 6
- 238000006243 chemical reaction Methods 0.000 claims description 6
- 238000011049 filling Methods 0.000 claims description 6
- 239000011259 mixed solution Substances 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 abstract description 8
- 230000007797 corrosion Effects 0.000 abstract description 8
- 238000005498 polishing Methods 0.000 abstract description 4
- 239000004205 dimethyl polysiloxane Substances 0.000 description 6
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 6
- -1 Polydimethylsiloxane Polymers 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 235000019441 ethanol Nutrition 0.000 description 3
- 239000011664 nicotinic acid Substances 0.000 description 3
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- 230000007306 turnover Effects 0.000 description 3
- 239000011800 void material Substances 0.000 description 3
- 239000004433 Thermoplastic polyurethane Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000708 deep reactive-ion etching Methods 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000001000 micrograph Methods 0.000 description 2
- 150000001282 organosilanes Chemical class 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 2
- 239000004926 polymethyl methacrylate Substances 0.000 description 2
- 238000002444 silanisation Methods 0.000 description 2
- 229920002803 thermoplastic polyurethane Polymers 0.000 description 2
- 238000010146 3D printing Methods 0.000 description 1
- 241000254173 Coleoptera Species 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000005411 Van der Waals force Methods 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 229910001423 beryllium ion Inorganic materials 0.000 description 1
- 230000009194 climbing Effects 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 239000000806 elastomer Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- 238000006884 silylation reaction Methods 0.000 description 1
- 238000000992 sputter etching Methods 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00111—Tips, pillars, i.e. raised structures
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00206—Processes for functionalising a surface, e.g. provide the surface with specific mechanical, chemical or biological properties
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00214—Processes for the simultaneaous manufacturing of a network or an array of similar microstructural devices
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/05—Arrays
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Molecular Biology (AREA)
- Micromachines (AREA)
- Moulds For Moulding Plastics Or The Like (AREA)
Abstract
The invention relates to a preparation method of a sucker structure forming die, which adopts an electrochemical corrosion process to carry out isotropic polishing on a micro-nano structure array on a moderately doped silicon substrate so as to convert the micro-nano structure array into a sucker array. The sucker array manufactured by the method has good consistency, and the size of the sucker array can be conveniently adjusted by adjusting the corrosion current and corrosion time of electrochemical corrosion. The invention also relates to a preparation method of the sucker structure, the sucker structure can be prepared by using the sucker structure forming die through twice die turning processes, the repeatability is good, the process is simple, the time consumption is short, and the batch processing cost is low.
Description
Technical Field
The invention relates to the technical field of bionic structure manufacturing, in particular to a manufacturing method of a sucker structure forming die and a manufacturing method of a sucker structure.
Background
Inspired by the microstructure of gecko feet and beetle feet, the bionic adhesive material has great application potential in the fields of climbing robots, intelligent manipulators, flexible electronics and the like. The design of the microstructure end of the bionic adhesive material has important influence on the adhesive property. One of the most commonly used end structures is mushroom-shaped, and van der Waals adhesion can be improved by a factor of 5-10 compared to a simple cylindrical end structure. But when such mushroom-shaped structures are used in wet or underwater environments, the van der waals forces between the contacting surfaces are greatly reduced. Research shows that the adhesion effect of the structure under a humid environment can be obviously improved by designing the tail end structure into a sucker structure. Currently, methods for making micro-suction cup structures include direct and indirect methods. Direct methods include two-photon printing techniques, 3D printing techniques, etc., but the material selection is limited when the sucker structure is prepared by these methods, and at the same time the processing process is time consuming and the batch processing cost is high. The existing indirect method is to prepare a sucker structure forming mold by utilizing a micro-processing technology (such as photoetching, etching and the like) and then prepare a sucker structure in a mode of mold turnover. Although the method has low cost and short time consumption compared with the direct method, the method has strict requirements on the process and poor repeatability.
Disclosure of Invention
The invention aims to solve at least one technical problem in the prior art and provides a preparation method of a forming die with a sucker structure, which has good repeatability and a simple process.
Another object of the present invention is to provide a method for manufacturing a sucker structure, which has the advantages of good repeatability, simple process, short time consumption and low batch processing cost.
In order to achieve the above object, the present invention provides the following technical solutions.
A preparation method of a sucker structure forming die comprises the following steps:
providing a moderately doped silicon substrate;
forming a micro-nano structure array on the moderately doped silicon substrate; and
and after the micro-nano structure array is formed, carrying out electrochemical corrosion on the moderately doped silicon substrate, so that the micro-nano structure array is converted into a sucker array, and obtaining the sucker structure forming die.
A method of making a suction cup structure, comprising: the sucker structure is prepared by adopting the sucker structure forming die through twice die turning processes.
Compared with the prior art, the invention achieves the following technical effects:
1. the invention provides a preparation method of a sucker structure forming die, which is characterized in that an electrochemical corrosion process is adopted to carry out isotropic polishing on a micro-nano structure array on a moderately doped silicon substrate, so that the micro-nano structure array is converted into a sucker array. The sucker array manufactured by the method has good consistency, and the size of the sucker array can be conveniently adjusted by adjusting the corrosion current and corrosion time of electrochemical corrosion.
2. The invention also provides a preparation method of the sucker structure, the sucker structure can be prepared by using the sucker structure forming die through twice die turnover processes, the repeatability is good, the process is simple, the time consumption is short, and the batch processing cost is low.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:
fig. 1 is a schematic three-dimensional view of a sucker structure provided in embodiment 1 of the present invention.
Fig. 2 is a schematic cross-sectional view of a chuck structure provided in embodiment 1 of the present invention.
Fig. 3 to 7 are schematic cross-sectional views of structures obtained at each step in the production method provided in example 1 of the present invention.
Fig. 8 is an electron microscope image of the chuck structure molding die provided in embodiment 1 of the present invention.
Description of the reference numerals
100 is a medium doped silicon substrate, 101 is a micron-sized cylindrical array, 102 is a chuck array, 200 is a first material layer, 300 is a secondary mold, 301 is a chuck-shaped void, 400 is a second material layer, and 500 is a chuck structure.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is illustrative only and is not intended to limit the scope of the present disclosure. Moreover, in the following description, descriptions of well-known structures and techniques are omitted so as to not unnecessarily obscure the concepts of the present disclosure.
Various structural schematics according to embodiments of the present disclosure are shown in the figures. The figures are not drawn to scale, wherein certain details are exaggerated and possibly omitted for clarity of presentation. The shapes of various regions, layers, and relative sizes and positional relationships therebetween shown in the drawings are merely exemplary, and deviations may occur in practice due to manufacturing tolerances or technical limitations, and a person skilled in the art may additionally design regions/layers having different shapes, sizes, relative positions, as actually required.
In the context of the present disclosure, when a layer/element is referred to as being "on" another layer/element, it can be directly on the other layer/element or intervening layers/elements may be present. In addition, if a layer/element is "on" another layer/element in one orientation, then that layer/element may be "under" the other layer/element when the orientation is reversed.
As described above, the present invention provides a method for manufacturing a suction cup structure forming mold, which can manufacture the structure shown in fig. 1 and 2, and specifically includes the following steps.
First, a moderately doped silicon substrate is provided.
The moderately-doped silicon substrate may be a p-type silicon substrate or an n-type silicon substrate, and the crystal orientation may be <100>, <110>, or <111 >. The moderately doped silicon substrate has a resistivity in the interval of 1-50 Ω · cm, preferably in the interval of 1-10 Ω · cm.
And then, forming a micro-nano structure array on the moderately doped silicon substrate.
The micro-nano structure array can be a micro-scale or nano-scale cylindrical array or a square column array. The method for forming the micro-nano structure array is not particularly limited, and a photoetching process, an etching process or a combination thereof can be adopted. The etching process may be dry etching or wet etching. The dry etching may be ion milling etching, plasma etching or deep reactive ion etching.
And after the micro-nano structure array is formed, carrying out electrochemical corrosion on the moderately doped silicon substrate, so that the micro-nano structure array is converted into a sucker array, and obtaining the sucker structure forming die.
And before the electrochemical corrosion reaction, arranging an electrode on the surface of the moderately doped silicon substrate far away from the micro-nano structure array. The electrode setting method can be that a metal sheet is directly placed on the surface of the moderately doped silicon substrate far away from the micro-nano structure array to serve as an electrode, or a layer of metal film is formed on the surface to serve as an electrode. The metal film may be a conventional conductive metal such as aluminum or copper, etc. The forming method of the metal film is Physical Vapor Deposition (PVD).
The electrochemical etching process adopts hydrofluoric acid solution or mixed hydrofluoric acid and alcohol solvent (such as ethanol or propanol) as etching solution. The mass fraction of hydrofluoric acid in the hydrofluoric acid aqueous solution of the present invention is not particularly limited, and may be any value greater than 0 and less than 100, for example, 10%. The volume ratio of the hydrofluoric acid to the alcohol solvent in the mixed solution is not particularly limited, and may be any value greater than 0 and less than 100, for example, 1: 3. The corrosion current is 1-100mA/cm2Preferably 10 to 50mA/cm2. The etch rate may be 5-150 nm/s. The size of the sucker array can be conveniently adjusted by adjusting the corrosion current and corrosion time of the electrochemical corrosion. When the moderately-doped silicon substrate of the present invention is an n-type silicon substrate, it is necessary to perform an electrochemical etching reaction under irradiation of a light source such as a halogen lamp.
According to the invention, the electrochemical corrosion reaction is carried out on the moderately doped silicon substrate, so that the isotropic polishing of the surface of the micro-nano structure array can be realized, the micro-nano structure array is converted into the sucker array, and the consistency of the obtained sucker array is good.
Preferably, after the electrochemical corrosion reaction is completed, the obtained sucker structure forming mold is cleaned and dried.
The cleaning and drying method of the present invention is not particularly limited, and the cleaning may be performed using absolute ethanol, and the drying may be performed in an oven.
The invention also provides a preparation method of the sucker structure, which comprises the step of preparing the sucker structure by adopting the sucker structure forming die through twice die turning processes.
The two-time die turnover process comprises the following steps:
filling gaps among the sucker arrays and covering the sucker arrays to form a first material layer, and demolding to obtain a secondary mold with sucker-shaped gaps; and
and filling and covering the sucker-shaped gap to form a second material layer, and demolding to obtain the sucker structure.
Preferably, before the first material layer is formed, the surface of the chuck structure forming mold is subjected to a silylation treatment. The surface of the mold may be silanized using, for example, an organosilane solution to facilitate demolding.
The first material layer is obtained by solidifying a flexible material solution or a rigid material solution. The second material layer is obtained by solidifying a flexible material solution. The flexible material may be Polydimethylsiloxane (PDMS), or a thermoplastic polyurethane elastomer (TPU), or the like. The rigid material may be Polymethylmethacrylate (PMMA) or the like.
Preferably, after the secondary mold is obtained and before the second material layer is formed, the surface of the secondary mold is subjected to silanization. The surface of the secondary mold may be silanized using, for example, an organosilane solution, thereby facilitating mold release.
The invention will be further described with reference to specific embodiments and drawings, but the invention is not limited thereto.
Example 1
Step 1: moderately doped P-type silicon with <100> crystal orientation is selected as the substrate 100, and the resistivity is 8 omega cm.
Step 2: a micron-scale cylindrical array 101 is prepared on a substrate 100 by using the processes of spin coating, photolithography and deep reactive ion etching, and the obtained structure is shown in fig. 3.
And step 3: and forming a layer of metal aluminum with the thickness of 200nm on the surface of the substrate 100 far away from the micron-sized cylinder array 101 by a physical vapor deposition method to be used as a backing electrode for electrochemical corrosion reaction.
And 4, step 4: performing electrochemical corrosion on the substrate 100 to realize the all-directional surface of the micron-scale cylindrical array 101And (4) polishing in an isotropic manner, so that the micron-sized cylindrical array 101 is converted into the sucker array 102, and the sucker structure forming mold shown in fig. 4 is obtained, and an electron microscope image of the sucker structure forming mold is shown in fig. 8. Wherein the volume ratio of the corrosive solution is 1:3 hydrofluoric acid and absolute ethyl alcohol mixed solution, the corrosion current is set to be 10mA/cm2The etching rate was 15 nm/s.
And 5: the structure shown in fig. 4 was washed and dried using absolute ethanol, and thereafter, the surface of the structure was subjected to silanization treatment for facilitating mold release.
Step 6: a first material layer 200 is formed by filling the gap between the chuck arrays 102 and covering the chuck arrays 102 using a Polydimethylsiloxane (PDMS) solution through a spin coating process, as shown in fig. 5. The mold is then released, resulting in a secondary mold 300 having a suction cup-like void 301, as shown in fig. 6. Thereafter, the surface of the secondary mold 300 is silanized for facilitating demolding.
And 7: the second material layer 400 is formed again by filling and covering the suction disc-shaped void 301 with a Polydimethylsiloxane (PDMS) solution through a spin coating process, as shown in fig. 7. And then demolded to obtain the suction cup structure 500, as shown in fig. 1 and 2.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention are included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the appended claims.
Claims (10)
1. The preparation method of the suction cup structure forming die is characterized by comprising the following steps of:
providing a moderately doped silicon substrate;
forming a micro-nano structure array on the moderately doped silicon substrate; and
and after the micro-nano structure array is formed, carrying out electrochemical corrosion on the moderately doped silicon substrate, so that the micro-nano structure array is converted into a sucker array, and obtaining the sucker structure forming die.
2. The method of claim 1, wherein the moderately-doped silicon substrate has a resistivity in the range of 1-50 Ω -cm.
3. The production method according to claim 1 or 2, wherein the electrochemical etching is performed at an etching current of 1 to 100mA/cm2。
4. The production method according to claim 1 or 2, wherein the electrochemical etching has an etching rate of 5 to 150 nm/s.
5. The production method according to claim 1 or 2, wherein the etching solution used for the electrochemical etching is an aqueous hydrofluoric acid solution or a mixed solution of hydrofluoric acid and an alcohol solvent.
6. The preparation method according to claim 1 or 2, wherein a metal film is formed on the surface of the moderately-doped silicon substrate far away from the micro-nano structure array to serve as an electrode before the electrochemical corrosion reaction is carried out.
7. The preparation method according to claim 1 or 2, wherein the micro-nano structure array is a micro-scale or nano-scale cylindrical array or a square column array.
8. A method of making a suction cup structure, comprising: the suction cup structure is manufactured by a double-rollover process using the suction cup structure forming mold obtained by the manufacturing method according to any one of claims 1 to 6.
9. The method of claim 8, wherein the double overmolding process comprises:
filling gaps among the sucker arrays and covering the sucker arrays to form a first material layer, and demolding to obtain a secondary mold with sucker-shaped gaps; and
and filling and covering the sucker-shaped gap to form a second material layer, and demolding to obtain the sucker structure.
10. The method of claim 9, wherein the second material layer is a flexible material layer.
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| CN202110768773.4A CN113651289B (en) | 2021-07-07 | 2021-07-07 | Preparation method of sucker structure forming die and preparation method of sucker structure |
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| CN202110768773.4A CN113651289B (en) | 2021-07-07 | 2021-07-07 | Preparation method of sucker structure forming die and preparation method of sucker structure |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114953496A (en) * | 2022-05-11 | 2022-08-30 | 北京航空航天大学 | Method for forming and manufacturing array micro sucker |
Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0951047A2 (en) * | 1998-03-27 | 1999-10-20 | Canon Kabushiki Kaisha | Nanostructure, electron emitting device, carbon nanotube device, and method of producing the same |
| CN1569610A (en) * | 2004-05-12 | 2005-01-26 | 厦门大学 | Method and device for processing complex three dimensional microstructure on the surface of silicon |
| CN101159234A (en) * | 2007-11-29 | 2008-04-09 | 北京大学 | Silicon chip surface pattern etching method and silicon chip thereof |
| RU2388109C1 (en) * | 2009-03-24 | 2010-04-27 | Учреждение Российской академии наук Институт физики полупроводников им. А.В. Ржанова Сибирского отделения РАН (ОФП СО РАН) | Method for production of silicon microchannel membrane in monolithic framing |
| US20100252177A1 (en) * | 2007-10-26 | 2010-10-07 | Bae Systems Plc | Adhesive microstructures |
| CN102012632A (en) * | 2010-09-10 | 2011-04-13 | 中国科学院合肥物质科学研究院 | Method for preparing bionic adhesion arrays with different top end structures |
| US20110117321A1 (en) * | 2009-10-14 | 2011-05-19 | Carlo Menon | Biomimetic dry adhesives and methods of production therefor |
| CN102148332A (en) * | 2010-11-26 | 2011-08-10 | 北京化工大学 | Preparation method of semiconductor nano-wire-based organic/inorganic composite solar cell |
| KR20120010773A (en) * | 2010-07-27 | 2012-02-06 | 재단법인대구경북과학기술원 | Flxible photovoltaic device and fabrication method thereof |
| CN102766892A (en) * | 2012-08-10 | 2012-11-07 | 重庆绿色智能技术研究院 | Micro-nano processing method and device |
| CN103738913A (en) * | 2013-12-31 | 2014-04-23 | 中山大学 | Method for manufacturing quasi-three-dimensional micron-nanometer column array |
| CN109159377A (en) * | 2018-10-10 | 2019-01-08 | 歌尔股份有限公司 | A kind of mold and its processing method |
| CN110482481A (en) * | 2019-07-08 | 2019-11-22 | 南京航空航天大学 | Expand the preparation method of the bionical pasting material of micro structure array in a kind of end |
| CN111115548A (en) * | 2019-11-25 | 2020-05-08 | 广东工业大学 | Mushroom-shaped super-hydrophobic-super-oleophobic PDMS micro-nano composite array and preparation method and application thereof |
-
2021
- 2021-07-07 CN CN202110768773.4A patent/CN113651289B/en active Active
Patent Citations (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0951047A2 (en) * | 1998-03-27 | 1999-10-20 | Canon Kabushiki Kaisha | Nanostructure, electron emitting device, carbon nanotube device, and method of producing the same |
| CN1569610A (en) * | 2004-05-12 | 2005-01-26 | 厦门大学 | Method and device for processing complex three dimensional microstructure on the surface of silicon |
| US20100252177A1 (en) * | 2007-10-26 | 2010-10-07 | Bae Systems Plc | Adhesive microstructures |
| CN101159234A (en) * | 2007-11-29 | 2008-04-09 | 北京大学 | Silicon chip surface pattern etching method and silicon chip thereof |
| RU2388109C1 (en) * | 2009-03-24 | 2010-04-27 | Учреждение Российской академии наук Институт физики полупроводников им. А.В. Ржанова Сибирского отделения РАН (ОФП СО РАН) | Method for production of silicon microchannel membrane in monolithic framing |
| US20110117321A1 (en) * | 2009-10-14 | 2011-05-19 | Carlo Menon | Biomimetic dry adhesives and methods of production therefor |
| KR20120010773A (en) * | 2010-07-27 | 2012-02-06 | 재단법인대구경북과학기술원 | Flxible photovoltaic device and fabrication method thereof |
| CN102012632A (en) * | 2010-09-10 | 2011-04-13 | 中国科学院合肥物质科学研究院 | Method for preparing bionic adhesion arrays with different top end structures |
| CN102148332A (en) * | 2010-11-26 | 2011-08-10 | 北京化工大学 | Preparation method of semiconductor nano-wire-based organic/inorganic composite solar cell |
| CN102766892A (en) * | 2012-08-10 | 2012-11-07 | 重庆绿色智能技术研究院 | Micro-nano processing method and device |
| CN103738913A (en) * | 2013-12-31 | 2014-04-23 | 中山大学 | Method for manufacturing quasi-three-dimensional micron-nanometer column array |
| CN109159377A (en) * | 2018-10-10 | 2019-01-08 | 歌尔股份有限公司 | A kind of mold and its processing method |
| CN110482481A (en) * | 2019-07-08 | 2019-11-22 | 南京航空航天大学 | Expand the preparation method of the bionical pasting material of micro structure array in a kind of end |
| CN111115548A (en) * | 2019-11-25 | 2020-05-08 | 广东工业大学 | Mushroom-shaped super-hydrophobic-super-oleophobic PDMS micro-nano composite array and preparation method and application thereof |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114953496A (en) * | 2022-05-11 | 2022-08-30 | 北京航空航天大学 | Method for forming and manufacturing array micro sucker |
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