CN113644224B - Preparation method of organic light-emitting diode and organic light-emitting diode - Google Patents
Preparation method of organic light-emitting diode and organic light-emitting diode Download PDFInfo
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- 150000003384 small molecules Chemical class 0.000 claims abstract description 22
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- 230000006911 nucleation Effects 0.000 claims abstract description 18
- 238000010899 nucleation Methods 0.000 claims abstract description 18
- 239000002346 layers by function Substances 0.000 claims abstract description 13
- 238000004519 manufacturing process Methods 0.000 claims abstract description 12
- 238000001259 photo etching Methods 0.000 claims abstract description 8
- 238000000151 deposition Methods 0.000 claims abstract description 5
- 239000000463 material Substances 0.000 claims description 8
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 5
- 235000013870 dimethyl polysiloxane Nutrition 0.000 claims description 5
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 claims description 5
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 claims description 5
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 5
- 238000001548 drop coating Methods 0.000 claims description 4
- 239000007791 liquid phase Substances 0.000 claims description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 3
- ITQYPUFOGQVEHR-UHFFFAOYSA-N boron;n-propan-2-ylpropan-2-amine Chemical compound [B].CC(C)NC(C)C ITQYPUFOGQVEHR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
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- 239000000956 alloy Substances 0.000 claims description 2
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- TVIVIEFSHFOWTE-UHFFFAOYSA-K tri(quinolin-8-yloxy)alumane Chemical group [Al+3].C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1.C1=CN=C2C([O-])=CC=CC2=C1 TVIVIEFSHFOWTE-UHFFFAOYSA-K 0.000 description 2
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Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
- H10K59/10—OLED displays
- H10K59/17—Passive-matrix OLED displays
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- Optics & Photonics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
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Abstract
The invention provides a preparation method of an organic light-emitting alternating-current diode and the organic light-emitting alternating-current diode. The method comprises the following steps: depositing an array of parallel strip-shaped anode electrodes on a transparent substrate; manufacturing a photoetching adhesive tape array in the vertical direction of the strip anode electrode array; forming ferroelectric small molecule solution at the gaps of the photoresist strip array; forming a film of solute on the nucleation sites after the solvent evaporates; and continuously manufacturing an organic light-emitting diode functional layer and a cathode array on the surface of the nucleated ferroelectric micromolecule. According to the technical scheme, the photoresist is used as a nucleation site by a solution method, the OLED array brightness adjusting layer with micro-nano size is grown through the selective area according to different contact angles, the brightness adjustment of the organic light emitting alternating current diode can be realized, the film forming speed is higher, and the uniformity of the film is high.
Description
Technical Field
The present invention relates to the field of semiconductor technologies, and in particular, to a method for manufacturing an organic light emitting diode and an organic light emitting diode.
Background
With the continuous development of organic memories, nonvolatile memory has achieved great success in electrical signals, but research in optical signals is weak, especially lacking in regulatory capability. The electroluminescence of the OLED is realized mainly by the composite luminescence of holes and electrons, and the brightness adjustment is realized by changing the injection of carriers. Because the OLED is compatible with the flexible substrate, the wearable display device can be wearable, and the wearable display device can be used for realizing human's dream, so that the portable display device can be portable and can also be used for cloud interaction. However, in places with high OLED brightness such as exhibition halls and outdoors, the eyeballs of people are easy to be impacted by light intensity, so that the vision is fuzzy, and the experience of people is affected. In the prior art, OLEDs are mainly brightness-adjusted in two ways. Linear dimming is simple and feasible by the principle of partial pressure, but is easy to cause spectral shift; the brightness is changed by changing the grid regulation of the driving circuit through changing the duty ratio of the voltage pulse, and the method has more accurate color mixing spectrum, but the inductance and the capacitance of the driving circuit are easy to generate noise. Therefore, how to perform brightness control on the OLED is a problem to be solved in the prior art.
Disclosure of Invention
The technical problems to be solved by the invention are as follows: provided are a method for manufacturing an organic light emitting diode and an organic light emitting diode, which facilitate the adjustment of brightness.
In order to solve the above problems, the present invention provides a method for preparing an organic light emitting diode, comprising the steps of: depositing an array of parallel strip-shaped anode electrodes on a transparent substrate; manufacturing a photoetching adhesive tape array in the vertical direction of the strip anode electrode array; forming ferroelectric small molecule solution at the gaps of the photoresist strip array; forming a film of solute on nucleation sites, which are anode electrode surfaces at gaps of the photoresist strip array, after solvent evaporation; and continuously manufacturing an organic light-emitting diode functional layer and a cathode array on the surface of the nucleated ferroelectric micromolecule to form a passive driving organic light-emitting diode array, wherein the obtained organic light-emitting diode array can be written into the ferroelectric micromolecule layer through externally applied direct-current voltage, and the brightness adjustment of the organic light-emitting diode is realized through alternating-current voltage reading.
Alternatively, the transparent substrate is selected from one of a rigid and a flexible transparent substrate.
Optionally, the ferroelectric small molecule solution is a solution in which a ferroelectric small molecule material is dissolved in water or alcohol.
Optionally, the ferroelectric small molecule is selected from one of HDA, DIPAB, and CA.
Alternatively, the method of forming the ferroelectric small molecule layer solution is selected from one of drop coating, knife coating, and dip-coating. The drop coating is to drop the ferroelectric small molecule layer solution on the substrate in the form of liquid drops, and the liquid drops are heated by the substrate, and the liquid drops are evaporated while being diffused to the surrounding with zero contact angle. The blade coating induces solution growth for shear forces, and the blade is used to drop the solution at an oblique angle to the nucleation sites. The dipping and pulling are that the ferroelectric material makes the liquid drop fall on the nucleation site by utilizing the difference of the substrate and the photoetching glue contact angle.
Optionally, the functional layer adopts one of vapor deposition or liquid phase.
Optionally, the cathode array is manufactured by transferring by using a PDMS preparation mold, and the transferred cathode electrode material is selected from any one of Al, ag, mg and Ca metal or an alloy thereof.
In order to solve the above problems, the present invention provides an organic light emitting diode comprising: a transparent substrate; parallel strip-shaped anode electrode arrays on the surface of the transparent substrate; a nucleated ferroelectric small molecule film on the surface of the strip anode electrode array; an organic light-emitting diode functional layer and a cathode array on the surface of the nucleated ferroelectric micromolecule film; the organic light-emitting diode can write the ferroelectric micromolecule layer by externally applying direct-current voltage, and read alternating-current voltage, so that the brightness adjustment of the organic light-emitting diode is realized.
According to the technical scheme, the photoresist is used as a nucleation site by a solution method, the micro-nano size OLED array brightness adjusting layer grows through the selective area according to different contact angles, the film forming speed is higher, and the film uniformity is high. And growing an OLED functional layer on the basis of the selected ferroelectric micromolecule material to realize an OLED array with a brightness adjusting layer. The brightness of the OLED is adjusted through direct current writing and alternating current reading. The OLED display device not only can reduce OLED power consumption and realize high-resolution display, but also can be used for flexible display, wearable equipment and the like.
Drawings
FIG. 1 is a schematic diagram showing the implementation steps of a method according to an embodiment of the present invention.
Fig. 2A to 2D are schematic process diagrams of the method according to an embodiment of the present invention.
Fig. 3 is a schematic diagram showing an organic light emitting diode structure and brightness control according to an embodiment of the invention.
Detailed Description
The following describes a method for manufacturing an organic light emitting diode and a specific embodiment of the organic light emitting diode according to the present invention in detail with reference to the accompanying drawings.
FIG. 1 is a schematic diagram of the implementation steps of the method according to the present embodiment, including: step S10, depositing a parallel strip-shaped anode electrode array on a transparent substrate; step S11, manufacturing a photoetching adhesive tape array in the vertical direction of the strip anode electrode array; step S12, forming ferroelectric micromolecule solution at gaps of the photoresist strip array; step S13, enabling the solute to nucleate on nucleation sites after the solvent evaporates, wherein the nucleation sites are the surfaces of the anode electrodes at gaps of the photoresist strip-shaped array; step S14, continuously manufacturing an organic light-emitting diode functional layer and a cathode array on the surface of the nucleated ferroelectric micromolecule to form a passive driving organic light-emitting diode array, wherein the obtained organic light-emitting diode array can be written into the ferroelectric micromolecule layer through externally applied direct-current voltage, and the alternating-current voltage is read to realize the brightness adjustment of the organic light-emitting diode.
Referring to step S10, as shown in fig. 2A, a parallel array of strip-shaped anode electrodes 21 is deposited on a transparent substrate 20. The anode electrode array 21 is micro-nano-sized, and is formed by ultraviolet lithography or EBL, depending on the lithography method. The transparent substrate 20 is selected from one of a rigid and a flexible transparent substrate.
Referring to step S11, a photoresist strip array 22 is formed in the vertical direction of the strip anode electrode array 21, as shown in fig. 2B. The patterns among the photoresists are nucleation sites, and the thickness of the photoresist can be adjusted according to the type and the photoetching parameters.
Referring to step S12 and step S13, as shown in fig. 2C, a ferroelectric small molecule solution 23 is formed at the gaps of the photoresist stripe array; when the solvent evaporates, the solute is caused to form a film on nucleation sites, which are the anode electrode surfaces at the gaps of the photoresist strip array 21.
In this embodiment, the method of forming the ferroelectric small molecule solution includes a drop-on, knife-on, or dip-pull method. The drop coating is to drop the ferroelectric small molecule layer solution on the substrate in the form of liquid drops, and the liquid drops are heated by the substrate, and the liquid drops are evaporated while being diffused to the surrounding with zero contact angle. The blade coating induces solution growth for shearing force, and the scraper is used for falling the solution at a nucleation site at a certain inclined angle. The dipping and pulling are that the ferroelectric material utilizes the difference of the substrate and the photoetching glue contact angle, and the liquid drops fall on the nucleation sites by utilizing a certain speed. The ferroelectric small molecule is HDA, DIPAB or CA. The solvent is water or alcohol.
Referring to fig. 2D, referring to step S14, the organic light emitting diode functional layer 24 and the cathode array 25 are continuously fabricated on the surface of the nucleated ferroelectric micro-molecules to form a passive driving organic light emitting diode array, and the obtained organic light emitting diode array can be written into the ferroelectric micro-molecule layer by externally applying a dc voltage, and the ac voltage is read, so as to realize brightness adjustment of the organic light emitting diode. An organic light emitting diode functional layer 24, including a hole transport layer, an electron transport layer, a light emitting layer, etc., is vapor deposited or liquid phase grown on the ferroelectric thin film. And transferring the cathode array 25 by using the PDMS patterned array to finally obtain the micro-nano size OLED array 30 with the brightness adjustable layer.
As shown in fig. 3, after the above steps are implemented, a PMOLED with adjustable brightness is obtained, which includes a transparent substrate (not shown); parallel strip-shaped anode electrode arrays 40 on the surface of the transparent substrate; a nucleated ferroelectric small molecule thin film 41 on the surface of the strip anode electrode array; a nucleated organic light emitting diode functional layer 42 and a cathode array 43 on the surface of the ferroelectric small molecule thin film 41. The direct current voltage 10 is added to the electrodes 40 and 43, the ferroelectric layer 41 is written, the charge injection amount of the OLED functional layer 42 is changed by utilizing the consistency or the difference between the polarization direction of the ferroelectric micromolecule and the working direction of the OLED, and the OLED with adjustable brightness is obtained by reading 11 by utilizing the alternating current voltage.
An embodiment of the present invention is given below.
(1) Growing micro-nano-sized anode strip electrode array on transparent substrate
The transparent substrate is glass, and the anode electrode is ITO. Ultraviolet light is used for photoetching patterns with micron size, and the thickness of the electrode is about 150 nm.
(2) And photoresist is arranged in the vertical direction of the anode strip electrode array, the patterns among the photoresist are nucleation sites, the photoresist is double-layer photoresist, and LOR+S1805 is formed.
(3) Preparing a ferroelectric small molecule solution, forming the ferroelectric small molecule solution on the surface of a nucleation site, and forming a film on the nucleation site by evaporating a solvent.
Preparing an HDA ferroelectric micromolecule solution, wherein the solute is HDA, and the solvent is water. The concentration is based on the liquid phase selective area growth mode and film thickness. The technological process of the selective area growth of HDA film array includes sucking proper amount of HDA solution onto the edge of the scraper with a pipette and inducing solution growth with shearing force.
(4) And growing an OLED functional layer material on the ferroelectric film.
The hole transport layer is NPB, and the electron transport layer/light emitting layer is Alq3. Vapor plating NPB/Alq3 under the vacuum degree of 5X 10 -4 by using an organic vapor plating technology, wherein the vapor plating rate isThe thickness is 60/70nm. The hole blocking layer is LiF, and the evaporation rate is/>, by utilizing the evaporation technologyThe thickness was 1nm.
(5) And transferring the cathode array.
The cathode array is Al, metal is evaporated on PDMS, and the electrode is separated by utilizing the change of the viscosity of PDMS along with the temperature, and then the bonding is completed with the functional material.
(6) The brightness of the OLED array is regulated by using alternating voltage.
The ferroelectric layer is written with a direct current voltage and read with an alternating current voltage. When the applied voltage and the polarization voltage have the same direction, the polarization promotes the work and the brightness is enhanced; conversely, the brightness decreases.
The foregoing is merely a preferred embodiment of the present invention and it should be noted that modifications and adaptations to those skilled in the art may be made without departing from the principles of the present invention, which are intended to be comprehended within the scope of the present invention.
Claims (10)
1. The preparation method of the organic light-emitting diode is characterized by comprising the following steps of:
Depositing an array of parallel strip-shaped anode electrodes on a transparent substrate;
Manufacturing a photoetching adhesive tape-shaped array above the strip-shaped anode electrode array in a direction perpendicular to the extending direction of the electrode array;
Forming ferroelectric small molecule solution at the gaps of the photoresist strip array;
Forming a film of solute on nucleation sites, which are anode electrode surfaces at gaps of the photoresist strip array, after solvent evaporation;
And continuously manufacturing an organic light-emitting diode functional layer and a cathode array on the surface of the nucleated ferroelectric micromolecule to form a passive driving organic light-emitting diode array, and writing the obtained organic light-emitting diode array into the ferroelectric micromolecule layer through externally applied direct-current voltage, reading alternating-current voltage and realizing brightness adjustment of the organic light-emitting diode.
2. The method of claim 1, wherein the transparent substrate is selected from one of a rigid and a flexible transparent substrate.
3. The method of claim 1, wherein the ferroelectric small molecule solution is a solution of a ferroelectric small molecule material dissolved in water or an alcohol.
4. The method of claim 3, wherein the ferroelectric small molecule is selected from one of HDA, DIPAB, and CA.
5. The method of claim 1, wherein the method of forming the ferroelectric small molecule layer solution is selected from one of drop coating, knife coating, and dip-coating.
6. The method according to claim 5, wherein the dropping is performed by depositing the ferroelectric small molecule layer solution in the form of droplets on the substrate, and heating the substrate to evaporate the droplets while diffusing the droplets to the periphery with zero contact angle.
7. The method of claim 5, wherein the doctor blade induces solution growth for shear forces, and the doctor blade drops the solution at an oblique angle to the nucleation sites.
8. The method of claim 5, wherein the dip-pull is such that the ferroelectric material uses a difference in substrate and photoresist contact angle to cause the droplet to land on the nucleation site.
9. The method of claim 1, wherein the organic light emitting diode functional layer is fabricated using one of vapor deposition or liquid phase.
10. The method of claim 1, wherein the cathode array is fabricated by transferring using a PDMS fabrication mold, and the transferred cathode electrode material is selected from any one of Al, ag, mg, and Ca metals or an alloy thereof.
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| US20050007517A1 (en) * | 2003-07-08 | 2005-01-13 | Organic Lighting Technologies Llc | Organic light emitting diode backlight integrated LCD |
| GB2436893A (en) * | 2006-03-31 | 2007-10-10 | Seiko Epson Corp | Inkjet printing of cross point passive matrix devices |
| GB0809426D0 (en) * | 2008-05-27 | 2008-07-02 | Westfaelische Wilhelms Uni | Method to control deposition of organic molecules and organic electronic device |
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| KR20100090318A (en) * | 2009-02-06 | 2010-08-16 | 단국대학교 산학협력단 | Organic electronic device with low driving voltage and high efficiency and method for preparing the same |
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