CN113644144A - Electrode pattern structure of TOPCon solar cell - Google Patents
Electrode pattern structure of TOPCon solar cell Download PDFInfo
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- CN113644144A CN113644144A CN202110995816.2A CN202110995816A CN113644144A CN 113644144 A CN113644144 A CN 113644144A CN 202110995816 A CN202110995816 A CN 202110995816A CN 113644144 A CN113644144 A CN 113644144A
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- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910052709 silver Inorganic materials 0.000 claims abstract description 37
- 239000004332 silver Substances 0.000 claims abstract description 37
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 25
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 25
- 239000002002 slurry Substances 0.000 claims abstract description 4
- 238000002161 passivation Methods 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 238000000034 method Methods 0.000 claims description 5
- 238000005240 physical vapour deposition Methods 0.000 claims description 4
- 238000009713 electroplating Methods 0.000 claims description 3
- 238000007641 inkjet printing Methods 0.000 claims description 3
- 238000007747 plating Methods 0.000 claims description 3
- 238000007650 screen-printing Methods 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 238000010023 transfer printing Methods 0.000 claims description 3
- 238000006243 chemical reaction Methods 0.000 abstract description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 2
- 238000003466 welding Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 4
- 239000007772 electrode material Substances 0.000 description 3
- 229910052751 metal Inorganic materials 0.000 description 3
- 239000002184 metal Substances 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
- H10F77/215—Geometries of grid contacts
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/20—Electrodes
- H10F77/206—Electrodes for devices having potential barriers
- H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
- H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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Abstract
The invention provides an electrode pattern structure of a TOPCon solar cell, which comprises a front electrode and a back electrode; the front electrode comprises a plurality of front main grids, a plurality of front fine grids and a plurality of front pad points, and the line width of the front main grids can be narrowed under the condition of not influencing the welding tension, so that the slurry loss of the front electrode is reduced, and the production cost is reduced; the back electrode comprises a plurality of back main grids and a plurality of back fine grids, the back main grids comprise a plurality of sectional type silver electrode main grids and aluminum electrode main grids wrapped and connected at the edges of the back main grids, the back fine grids comprise silver fine grids and aluminum fine grids which are overlapped from inside to outside, silver paste consumption of the back electrode can be reduced, better current collection can be achieved, and conversion efficiency is improved.
Description
Technical Field
The invention relates to the field of solar cells, in particular to an electrode pattern structure of a TOPCon solar cell.
Background
The Tunnel Oxide passivation contact (TOPCon) cell is called as a Tunnel Oxide passivation contact (Tunnel Oxide passivation contact) cell, and the Tunnel Oxide passivation metal contact structure consists of an ultrathin Tunnel Oxide layer and a doped polycrystalline silicon layer, so that the recombination of a metal contact region can be remarkably reduced, and the Tunnel Oxide passivation metal contact structure has good contact performance and can greatly improve the efficiency of a solar cell.
The common electrode pattern structure of the TOPCon solar cell has the defects of high silver paste consumption and high cost due to the fact that the front electrode and the back electrode are made of the same material and the main grid width is large. On the other hand, the back electrode structure completely uses an aluminum paste + laser local grooving process, although the process can reduce the consumption of silver paste, the input of laser grooving equipment needs to be increased, in addition, the surface passivation effect can be damaged in a laser grooving area, the open-circuit voltage is influenced, and compared with a silver electrode material, the series resistance of an aluminum grid line made of the aluminum electrode material is higher than that of a silver grid line made of the silver electrode material, so that the filling factor is influenced, and the conversion efficiency is influenced.
Disclosure of Invention
In view of the above technical problems, the present invention provides an electrode pattern structure of a TOPCon solar cell.
An electrode pattern structure of a TOPCon solar cell comprises a front electrode and a back electrode, wherein the front electrode and the back electrode are both made of conductive slurry, the front electrode is arranged on an antireflection passivation film on the front side of a silicon wafer, and the back electrode is arranged on an antireflection passivation film on the back side of the silicon wafer;
the front electrode comprises a plurality of front main grids, a plurality of front fine grids and a plurality of front pad points, wherein the head and the tail of each front main grid are provided with a fish-fork line structure, and the front fine grids and the front pad points are uniformly distributed along the length direction of the front main grids;
the back side electrode comprises a plurality of back side main grids and a plurality of back side fine grids, the back side main grids comprise a plurality of sectional type silver electrode main grids and aluminum electrode main grids wrapped and connected at the edges of the sectional type silver electrode main grids, and the head and the tail of each back side main grid are designed with a fish-fork line structure; the back fine grids are uniformly distributed along the length direction of the back main grid, and each back fine grid comprises a silver fine grid and an aluminum fine grid which are overlapped from inside to outside.
Furthermore, the number of the front main grids is 5-20, the width is 0.04-1mm, and the height is 5-15 μm.
Further, the front pad points comprise large pad points and small pad points, the large pad points are arranged at the head and the tail of the front main grid, and the small pad points are equidistantly distributed between the large pad points.
Furthermore, the length of the large pad point is 1-3mm, the width of the large pad point is 0.5-2mm, and the length of the small pad point is 0.5-2mm, and the width of the small pad point is 0.2-1 mm.
Furthermore, the number of the front fine grids is 100-140, the width is 15-30 μm, and the height is 8-20 μm; and a bus bar is connected between two adjacent front fine grids and is vertically intersected with the front fine grids.
Furthermore, the intersection positions of the front fine grid, the front main grid and the front pad point are provided with anti-breaking grids which are arranged on the front fine grid and gradually become thinner from the intersection end to the other end.
Furthermore, the length of the anti-breaking grid is 0.1-2mm, the width of the thickest part is 60-200 μm, and the width of the thinnest part is equal to the width of the front fine grid.
Furthermore, the number of the back main grids is 5-20, the width of the silver electrode main grid is 0.04-2mm, the length of the silver electrode main grid is 1-10mm, the height of the silver electrode main grid is 8-25 mu m, the width of the aluminum electrode main grid is 0.1-4mm, and the height of the aluminum electrode main grid is 8-35 mu m.
Furthermore, the number of the back fine grids is 100-160, the width of the silver fine grid is 18-35 μm, the height of the silver fine grid is 7-15 μm, the width of the aluminum fine grid is 20-40 μm, and the height of the aluminum fine grid is 15-30 μm.
Further, the front electrode and the back electrode are made by any one of screen printing, ink-jet printing, laser transfer printing, chemical plating, electroplating and PVD.
The invention has the beneficial effects that: 1. the front main grid is additionally provided with a plurality of front pad points, so that the line width of the front main grid can be narrowed under the condition of not influencing the welding tension, thereby reducing the slurry loss of the front electrode and lowering the production cost; 2. the back main grid adopts a plurality of sectional type silver electrode main grids, the silver electrode main grids are wrapped and connected by the aluminum electrode main grids, and the back fine grid adopts a process of overlapping the silver fine grid with the aluminum fine grid, so that the silver paste consumption of the back electrode can be reduced, better current collection can be realized, and the conversion efficiency is improved.
Drawings
The invention will be further described with reference to the accompanying drawings.
FIG. 1 is a schematic diagram of a front electrode structure according to an embodiment of the present invention;
FIG. 2 is an enlarged view of a portion of FIG. 1 at A;
FIG. 3 is a schematic diagram of a backside electrode in an embodiment of the present invention;
FIG. 4 is an enlarged view of a portion of FIG. 3 at B;
FIG. 5 is a schematic diagram illustrating a position relationship of a back side main gate according to an embodiment of the present invention;
FIG. 6 is a schematic diagram illustrating a position relationship of a back side fine gate according to an embodiment of the present invention;
the figures in the drawings represent:
1. the front main grid 2, the front fine grid 3, the front pad point 31, the large pad point 32, the small pad point 4, the bus bar 5, the breakage-proof grid 6, the back main grid 61, the silver electrode main grid 62, the aluminum electrode main grid 7, the back fine grid 71, the silver fine grid 72 and the aluminum fine grid.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all embodiments, and all other embodiments obtained by a person of ordinary skill in the art without creative efforts based on the embodiments of the present invention belong to the protection scope of the present invention.
An electrode pattern structure of a TOPCon solar cell comprises a front electrode and a back electrode, wherein the front electrode is arranged on an antireflection passivation film on the front side of a silicon wafer, and the back electrode is arranged on an antireflection passivation film on the back side of the silicon wafer. The front electrode and the back electrode are both made of conductive paste by any one of screen printing, ink-jet printing, laser transfer printing, chemical plating, electroplating and PVD (physical vapor deposition) methods.
The front electrode is as shown in fig. 1 and fig. 2, and comprises a plurality of front main grids 1, a plurality of front fine grids 2 and a plurality of front pad points 3, wherein the head and the tail of the front main grid 1 are designed with a fish-fork line structure, and the front fine grids 2 and the front pad points 3 are uniformly distributed along the length direction of the front main grid 1.
The number of the front main grids 1 is 5-20, the width is 0.04-1mm, and the height is 5-15 μm. The front pad points 3 comprise large pad points 31 and small pad points 32, the large pad points 31 are arranged at the head and the tail of the front main grid 1, and the small pad points 32 are distributed at equal intervals between the large pad points 31. The length of the large pad point 31 is 1-3mm, the width is 0.5-2mm (slightly larger than the small pad point 32), the length of the small pad point 32 is 0.5-2mm, and the width is 0.2-1mm (slightly larger than the front main grid 1).
The number of the front fine grids 2 is 100-140, the width is 15-30 μm, and the height is 8-20 μm. And a bus bar 4 is connected between two adjacent front fine grids 2, and the bus bar 4 is vertically intersected with the front fine grids 2. The intersection positions of the front fine grid 2, the front main grid 1 and the front pad point 3 are provided with anti-breaking grids 5, and the anti-breaking grids 5 are arranged on the front fine grid 2 and gradually become thinner from the intersection end to the other end. The length of the anti-breaking grid 5 is 0.1-2mm, the width of the thickest part is 60-200 μm, and the width of the thinnest part is equal to the width of the front fine grid 2.
The back electrode includes a plurality of back main grids 6 and a plurality of back fine grids 7 as shown in fig. 3 and 4, wherein the head and the tail of the back main grids 6 are designed with a fish-fork line structure, and the back fine grids 7 are uniformly distributed along the length direction of the back main grids 6.
The number of the back main grids 6 is 5-20, and the back main grids 6 comprise a plurality of sectional silver electrode main grids 61 and aluminum electrode main grids 62 (the section is shown in figure 5) which are wrapped and connected at the edges of the sectional silver electrode main grids 61. Wherein, the width of the silver electrode main grid 61 is 0.04-2mm, the length is 1-10mm, and the height is 8-25 μm. The width of the aluminum electrode main grid 62 is 0.1-4mm, and the height is 8-35 μm (slightly larger than the silver electrode main grid 61, so that the edge of the silver electrode main grid 61 can be wrapped by the aluminum electrode main grid).
The number of the back fine grids 7 is 100-160, and the back fine grids 7 comprise silver fine grids 71 and aluminum fine grids 72 which are overlapped from inside to outside (the section is shown in fig. 6). Wherein, the width of the silver fine grid 71 is 18-35 μm, and the height is 7-15 μm. The aluminum fine grid 72 has a width of 20-40 μm and a height of 15-30 μm (slightly larger than the silver fine grid 71 so that it covers the silver fine grid 71).
Various modifications to these embodiments will be readily apparent to those skilled in the art, and the generic principles defined herein may be applied to other embodiments without departing from the spirit or scope of the invention.
Claims (10)
1. An electrode pattern structure of TOPCon solar cell is characterized in that: the silicon wafer antireflection passivation film structure comprises a front electrode and a back electrode, wherein the front electrode and the back electrode are both made of conductive slurry, the front electrode is arranged on an antireflection passivation film on the front side of a silicon wafer, and the back electrode is arranged on an antireflection passivation film on the back side of the silicon wafer;
the front electrode comprises a plurality of front main grids, a plurality of front fine grids and a plurality of front pad points, wherein the head and the tail of each front main grid are provided with a fish-fork line structure, and the front fine grids and the front pad points are uniformly distributed along the length direction of the front main grids;
the back side electrode comprises a plurality of back side main grids and a plurality of back side fine grids, the back side main grids comprise a plurality of sectional type silver electrode main grids and aluminum electrode main grids wrapped and connected at the edges of the sectional type silver electrode main grids, and the head and the tail of each back side main grid are designed with a fish-fork line structure; the back fine grids are uniformly distributed along the length direction of the back main grid, and each back fine grid comprises a silver fine grid and an aluminum fine grid which are overlapped from inside to outside.
2. The electrode pattern structure of a TOPCon solar cell as claimed in claim 1, wherein: the number of the front main grids is 5-20, the width is 0.04-1mm, and the height is 5-15 μm.
3. The electrode pattern structure of a TOPCon solar cell as claimed in claim 1, wherein: the front pad point comprises a large pad point and a small pad point, the large pad point is arranged at the head and the tail of the front main grid, and the small pad points are equidistantly distributed between the large pad points.
4. The electrode pattern structure of a TOPCon solar cell as claimed in claim 3, wherein: the length of the large pad point is 1-3mm, the width of the large pad point is 0.5-2mm, and the length of the small pad point is 0.5-2mm, and the width of the small pad point is 0.2-1 mm.
5. The electrode pattern structure of a TOPCon solar cell as claimed in claim 1, wherein: the number of the front fine grids is 100-140, the width is 15-30 μm, and the height is 8-20 μm; and a bus bar is connected between two adjacent front fine grids and is vertically intersected with the front fine grids.
6. The electrode pattern structure of TOPCon solar cell as claimed in claim 5, wherein: the intersection positions of the front fine grid, the front main grid and the front pad point are provided with anti-breaking grids which are arranged on the front fine grid and gradually become thinner from the intersection end to the other end.
7. The electrode pattern structure of TOPCon solar cell as claimed in claim 6, wherein: the length of the anti-breaking grid is 0.1-2mm, the width of the thickest part is 60-200 mu m, and the width of the thinnest part is equal to the width of the front fine grid.
8. The electrode pattern structure of a TOPCon solar cell as claimed in claim 1, wherein: the number of the back main grids is 5-20, the width of the silver electrode main grid is 0.04-2mm, the length is 1-10mm, the height is 8-25 mu m, and the width of the aluminum electrode main grid is 0.1-4mm, and the height is 8-35 mu m.
9. The electrode pattern structure of a TOPCon solar cell as claimed in claim 1, wherein: the number of the back fine grids is 100-160, the width of the silver fine grid is 18-35 μm, the height of the silver fine grid is 7-15 μm, the width of the aluminum fine grid is 20-40 μm, and the height of the aluminum fine grid is 15-30 μm.
10. The structure of any one of claims 1-9, wherein the structure of the electrode pattern of a TOPCon solar cell is: the front electrode and the back electrode are made by any one of screen printing, ink-jet printing, laser transfer printing, chemical plating, electroplating and PVD methods.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110995816.2A CN113644144A (en) | 2021-08-27 | 2021-08-27 | Electrode pattern structure of TOPCon solar cell |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110995816.2A CN113644144A (en) | 2021-08-27 | 2021-08-27 | Electrode pattern structure of TOPCon solar cell |
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| Publication Number | Publication Date |
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| CN113644144A true CN113644144A (en) | 2021-11-12 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110995816.2A Withdrawn CN113644144A (en) | 2021-08-27 | 2021-08-27 | Electrode pattern structure of TOPCon solar cell |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114889315A (en) * | 2022-04-29 | 2022-08-12 | 晋能光伏技术有限责任公司 | Silk screen printing plate group, silk screen printing method and preparation method of heterojunction solar cell |
| EP4325584A4 (en) * | 2022-06-28 | 2024-10-09 | Zhejiang Jinko Solar Co., Ltd. | Solar cell and photovoltaic module |
-
2021
- 2021-08-27 CN CN202110995816.2A patent/CN113644144A/en not_active Withdrawn
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114889315A (en) * | 2022-04-29 | 2022-08-12 | 晋能光伏技术有限责任公司 | Silk screen printing plate group, silk screen printing method and preparation method of heterojunction solar cell |
| EP4325584A4 (en) * | 2022-06-28 | 2024-10-09 | Zhejiang Jinko Solar Co., Ltd. | Solar cell and photovoltaic module |
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Application publication date: 20211112 |
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| WW01 | Invention patent application withdrawn after publication |