CN113634544B - Wafer cleaning mechanism - Google Patents

Wafer cleaning mechanism Download PDF

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Publication number
CN113634544B
CN113634544B CN202110939158.5A CN202110939158A CN113634544B CN 113634544 B CN113634544 B CN 113634544B CN 202110939158 A CN202110939158 A CN 202110939158A CN 113634544 B CN113634544 B CN 113634544B
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China
Prior art keywords
wafer
cleaning
film
ring
tank
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CN202110939158.5A
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Chinese (zh)
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CN113634544A (en
Inventor
曹瑞霞
曹璟
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Hubei 3d Semiconductor Integrated Innovation Center Co ltd
Hubei Jiangcheng Laboratory
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Hubei 3d Semiconductor Integrated Innovation Center Co ltd
Hubei Jiangcheng Laboratory
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Priority to CN202110939158.5A priority Critical patent/CN113634544B/en
Publication of CN113634544A publication Critical patent/CN113634544A/en
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/02Cleaning by the force of jets or sprays
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B13/00Accessories or details of general applicability for machines or apparatus for cleaning
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B08CLEANING
    • B08BCLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B3/00Cleaning by methods involving the use or presence of liquid or steam
    • B08B3/04Cleaning involving contact with liquid
    • B08B3/08Cleaning involving contact with liquid the liquid having chemical or dissolving effect
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67011Apparatus for manufacture or treatment
    • H01L21/67017Apparatus for fluid treatment
    • H01L21/67028Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67051Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing using mainly spraying means, e.g. nozzles

Abstract

The invention provides a wafer cleaning mechanism, which is used for cleaning a wafer, wherein a bearing film is attached to the surface of the wafer, and the wafer cleaning mechanism comprises: a film stretching ring, a cleaning tank and a cleaning bracket; the cleaning support is used for fixing the film stretching ring, the cleaning tank is located below the film stretching ring, the bearing film is attached to the film stretching ring, the wafer is located in the inner ring face of the film stretching ring, a gap is reserved between the edge of the wafer and the inner ring face of the film stretching ring, and the wafer faces the cleaning tank and is immersed in cleaning liquid in the cleaning tank. In the process of cleaning the wafer, the cleaning solution does not contact the surface of the bearing film, so that the wafer is prevented from being polluted due to the physical and chemical reaction between the cleaning solution and the bearing film, the cleaning cleanliness of the wafer is ensured, and the process compatibility is high.

Description

Wafer cleaning mechanism
Technical Field
The invention relates to the technical field of semiconductors, in particular to a wafer cleaning mechanism.
Background
In the conventional back-end packaging, the cutting, thinning, subsequent film expanding and mounting processes of the wafer generally need to fix the wafer on a blue film or a UV film. In the hybrid bonding process of the chip and the wafer (C2W), the cutting, thinning, film expanding and mounting processes of the traditional back-end package are correspondingly transferred to the front-end semiconductor manufacturing process, and after some processes, the wafer needs to be cleaned, for example, after the wafer is cut, the wafer needs to be cleaned to remove residues generated during the cutting of the surface of the wafer; after some temporary bonding of the wafer, the wafer also needs to be cleaned to remove the residual bonding glue on the wafer surface. Cleaning of wafers involves organic solvent cleaning, even combinations of organic solvents, which presents a significant challenge to the solvent resistance of blue or UV films. In the cleaning process of the wafer by using the organic solvent, damage to the blue film or the UV film is likely to be caused, and the organic solvent and the blue film or the UV film generate a chemical reaction to pollute the wafer.
Disclosure of Invention
The invention aims to provide a wafer cleaning mechanism which can avoid the pollution to a wafer in the wafer cleaning process.
In order to achieve the above object, the present invention provides a wafer cleaning mechanism for cleaning a wafer, wherein a carrier film is attached to a surface of the wafer, the wafer cleaning mechanism comprising: a film stretching ring, a cleaning tank and a cleaning bracket;
the cleaning support is used for fixing the film stretching ring, the cleaning tank is located below the film stretching ring, the bearing film is attached to the film stretching ring, the wafer is located in the inner ring surface of the film stretching ring, a gap is formed between the edge of the wafer and the inner ring surface of the film stretching ring, and the wafer faces the cleaning tank and is immersed in cleaning liquid in the cleaning tank.
Optionally, the thickness of the wafer is less than or equal to 775 um.
Optionally, a part of the thickness of the wafer is immersed in the cleaning solution, so that the carrier film is separated from the cleaning solution.
Optionally, the gravity of the wafer is smaller than the adhesion force of the carrier film to the wafer.
Optionally, the adhesive force of the carrier film is 10N to 16N.
Optionally, the thickness of the groove wall of the cleaning groove is smaller than a gap between the edge of the wafer and the inner annular surface of the tension ring.
Optionally, the distance between the edge of the wafer and the wall of the cleaning tank is 10mm to 30 mm.
Optionally, the carrier film comprises a UV film or a blue film.
Optionally, the cleaning solution is an organic solvent.
Optionally, the cleaning support is annular, the stretching ring is fixed above the cleaning support, the cleaning tank is located in the inner annular surface of the cleaning support, and gaps are formed between the tank wall of the cleaning tank and the inner annular surface of the cleaning support as well as between the tank wall of the cleaning tank and the inner annular surface of the stretching ring.
In the wafer cleaning mechanism provided by the invention, the bearing film is adhered to the surface of the wafer, the cleaning bracket is used for fixing the film stretching ring, the cleaning tank is positioned below the film stretching ring, the bearing film is attached on the film stretching ring, the wafer is positioned in the inner ring surface of the film stretching ring, a gap is arranged between the edge of the wafer and the inner ring surface of the film stretching ring, the wafer faces the cleaning tank and is immersed in the cleaning solution in the cleaning tank, the immersed surface of the wafer reacts with the cleaning solution, so that the wafer is cleaned, in the cleaning process of the wafer, the cleaning solution is not contacted with the surface of the bearing film by controlling the volume of the cleaning solution, therefore, the wafer is prevented from being polluted due to the fact that the cleaning liquid and the bearing film are subjected to physical and chemical reactions, the cleaning cleanliness of the wafer is guaranteed, and the process compatibility is high.
Drawings
FIG. 1 is a schematic diagram of a wafer cleaning mechanism;
FIG. 2 is a schematic diagram of another wafer cleaning mechanism;
FIG. 3 is a schematic diagram of a wafer cleaning mechanism according to an embodiment of the present invention;
wherein the reference numerals are:
11. 12, 100-stretch film ring; 21. 22, 200-carrier film; 31. 32, 300-wafer; 41. 42-a guard ring; 110-cleaning the stent; 400-cleaning tank.
Detailed Description
FIG. 1 is a schematic diagram of a wafer cleaning mechanism. Referring to fig. 1, the wafer cleaning mechanism is configured to clean a wafer 31, a carrier film 21 is attached to the surface of the wafer 31, the wafer cleaning mechanism includes a film stretching ring 11, a protection ring 41, and a nozzle (not shown), the carrier film 21 is attached to the film stretching ring 11, the wafer 31 is located in an inner ring surface of the film stretching ring 11, the protection ring 41 is fixed on the carrier film 21 and located in the inner ring surface of the film stretching ring 11, a gap is formed between the protection ring 41 and the edge of the wafer 31, and the protection ring 41 does not contact the edge of the wafer 31, so as to prevent the edge of the wafer 31 from being damaged. When the wafer 31 is cleaned, the cleaning liquid sprayed from the spray head sprays the wafer 31, and the cleaning liquid contacts the carrier film 21 due to a gap between the protective ring 41 and the wafer 31, and the cleaning liquid is usually an organic solvent, and the organic solvent and the carrier film 21 undergo a physicochemical reaction to contaminate the wafer 31, thereby affecting the cleaning effect of the wafer 31.
FIG. 2 is a schematic diagram of another wafer cleaning mechanism. Referring to fig. 2, the wafer cleaning mechanism is used for cleaning a wafer 32, a carrier film 22 is attached to the surface of the wafer 32, the wafer cleaning mechanism comprises a film stretching ring 12, a protection ring 42 and a spray head (not shown in the figure), the carrier film 22 is attached on the film stretching ring 12, so that the wafer 32 is positioned in the inner annular surface of the film stretching ring 12, the protection ring 42 is in an inverted L shape, one end of the protection ring 42 is fixed on the bearing film 22 and is positioned in the inner annular surface of the film stretching ring 12, the other end of the protective ring 42 covers a part of the surface of the edge of the wafer 32, and the nozzle sprays a cleaning solution to the wafer 32 to prevent the cleaning solution from contacting the carrier film 22 when cleaning the wafer 32, the cleaning solution is usually an organic solvent, so that the organic solvent may find a physicochemical reaction with the carrier film 21 to contaminate the wafer 31. However, since the other end of the protection ring 42 covers a part of the surface of the edge of the wafer 32, the protection ring 42 is in direct contact with the edge surface of the wafer 32, and there is a risk of damaging the wafer 32.
Therefore, the invention provides a wafer cleaning mechanism, the bearing film is adhered on the surface of the wafer, the cleaning bracket is used for fixing the film stretching ring, the cleaning tank is positioned below the film stretching ring, the bearing film is attached on the film stretching ring, the wafer is positioned in the inner ring surface of the film stretching ring, a gap is arranged between the edge of the wafer and the inner ring surface of the film stretching ring, the wafer faces the cleaning tank and is immersed in the cleaning solution in the cleaning tank, the immersed surface of the wafer reacts with the cleaning solution, so that the wafer is cleaned, in the cleaning process of the wafer, the cleaning solution is not contacted with the surface of the bearing film by controlling the volume of the cleaning solution, therefore, the wafer is prevented from being polluted due to the fact that the cleaning liquid and the bearing film are subjected to physical and chemical reactions, the cleaning cleanliness of the wafer is guaranteed, and the process compatibility is high.
The following describes in more detail embodiments of the present invention with reference to the schematic drawings. The advantages and features of the present invention will become more apparent from the following description. It is to be noted that the drawings are in a very simplified form and are not to precise scale, which is merely for the purpose of facilitating and distinctly claiming the embodiments of the present invention.
Fig. 3 is a schematic structural diagram of the wafer cleaning mechanism according to the present embodiment. Referring to fig. 3, the present embodiment provides a wafer cleaning mechanism for cleaning a wafer 300, wherein a carrier film 200 is attached to a surface of the wafer 300; the wafer cleaning mechanism includes a tension ring 100, a cleaning tank 400 and a cleaning support 110.
The carrier film 200 is attached to the film stretching ring 100, and the size of the carrier film 200 is smaller than that of the film stretching ring 100, that is, the edge of the carrier film 200 is located in the edge of the film stretching ring 100. In this embodiment, the carrier film 200 includes a UV film or a blue film, and may be other adhesive tapes. After the carrier film 200 is attached to the film stretching ring 100, the wafer 300 and the film stretching ring 100 are fixed, the wafer 300 is located in the inner ring surface of the film stretching ring 100, and the size of the wafer 300 is smaller than that of the inner ring surface of the film stretching ring 100, so that a gap is formed between the edge of the wafer 300 and the inner ring surface of the film stretching ring 100, and the position of the cleaning tank 400 is left.
The cleaning support 110 is used for fixing the film stretching ring 100 and supporting the film stretching ring 100, the cleaning tank 400 is located below the film stretching ring 100, and is also located below the carrier film 200 and the wafer 300, and the wafer 300 faces the cleaning tank 400. In this embodiment, the thickness of the groove wall of the cleaning groove 400 is smaller than the gap between the edge of the wafer 300 and the inner annular surface of the film stretching ring 100, the width of the cleaning groove 400 is larger than the size of the wafer 300 to accommodate the wafer 300, and the height of the cleaning groove 400 is smaller than the sum of the height of the cleaning support 110 and the thickness of the film stretching ring 100, so that the cleaning groove 400 can be placed under the carrier film 200.
In this embodiment, the cleaning support 110 is preferably ring-shaped, and the size of the wafer 300 is smaller than the size of the inner ring surface of the cleaning support 110, so that a gap is formed between the edge of the wafer 300 and the inner ring surface of the cleaning support 110, and the position of the cleaning tank 400 is left. The film stretching ring 100 is fixed above the cleaning support 110, an inner annular surface of the film stretching ring 100 may coincide with an inner annular surface of the cleaning support 110, and an inner annular surface of the film stretching ring 100 may not coincide with an inner annular surface of the cleaning support 110. The cleaning tank 400 is also located in the inner ring surface of the cleaning bracket 110, and gaps are formed between the tank wall of the cleaning tank 400 and the inner ring surfaces of the cleaning bracket 110 and the inner ring surface of the film stretching ring 100, so that the cleaning tank 400 can be conveniently taken and placed. The cleaning bracket 110 may have other structures as long as the film stretching ring 100 can be fixed and the cleaning bracket 110 is reserved for the position for placing the cleaning tank 400.
In this embodiment, the thickness of the wafer 300 is less than or equal to 775um, the adhesion of the carrier film 200 is 10N-16N (newtons), and the gravity of the wafer 300 is less than the adhesion of the carrier film 200, so as to prevent the wafer 300 from falling off and damaging the wafer 300 during cleaning. For example, the thickness of the wafer 300 is smaller than or equal to 775um, the mass of the wafer 300 is 125g, the gravity of the wafer 300 is 1.2N, the gravity of the wafer 300 is obviously smaller than the adhesive force of the carrier film 200, the wafer 300 can be effectively prevented from falling off, and the wafer 300 can be firmly attached to the lower surface of the carrier film 200.
In the present embodiment, the shape of the cleaning tank 400 may preferably be a cylinder, and the size of the inner annular surface of the cleaning tank 400 is larger than the size of the wafer 300, but is not limited thereto, and the shape of the cleaning tank 400 may also be a square, and both the length and the width of the cleaning tank 400 are larger than the size of the wafer 300. In this embodiment, the distance between the edge of the wafer 300 and the wall of the cleaning tank 400 may be 10mm to 30mm, so that the width of the cleaning tank 400 is larger than the size of the wafer 300 to accommodate the wafer 300, but is not limited to this distance; for example, the size of the wafer 300 is 300mm, the size of the inner annular surface of the film stretching ring 100 is 380mm, and the size of the inner annular surface of the cleaning tank 400 may be 320 mm-360 mm.
The cleaning tank 400 is filled with a cleaning solution, the wafer 300 is immersed in the cleaning solution in the cleaning tank 400 for cleaning when facing the cleaning tank 400, and the wafer 300 is immersed in the cleaning solution when the wafer 300 is immersed in the cleaning tank 400 in consideration of the adhesion and deformation of the carrier film 200; during cleaning, a part of the thickness of the wafer 300 is immersed in the cleaning solution, so that the carrier film 300 is separated from the cleaning solution. By controlling the volume of the cleaning solution, the cleaning solution does not contact the surface of the carrier film 200, thereby preventing the wafer 300 from being polluted due to the physicochemical reaction between the cleaning solution and the carrier film 200; the volume of the cleaning solution can be flexibly controlled to control the thickness of the wafer 300 immersed in the cleaning solution, and the method is suitable for cleaning wafers with different thicknesses. In this embodiment, the cleaning solution is an organic solvent, and may also be other solutions that are easily reacted with the carrier film 200, so as to prevent the cleaning solution from contacting the surface of the carrier film 200; for wafers 300 with different sizes, the sizes of the cleaning tank 400, the cleaning support 110, the carrier film 200 and the film stretching ring 100 can be adjusted to be suitable for cleaning wafers with various sizes, but it should be noted that the gravity of the wafer 300 is smaller than the adhesion force of the carrier film 200 to the wafer 300, so as to prevent the wafer 300 from falling off and damaging the wafer 300 during cleaning.
In this embodiment, the wafer 300 is a single wafer, and for a bonded wafer structure formed after bonding two or more wafers, the wafer cleaning mechanism provided in this embodiment may also be used to clean the bonded wafer structure, specifically, the carrier film is attached to the surface of the bonded wafer structure, the carrier film is attached to the film stretching ring, the bonded wafer structure faces the cleaning tank and is immersed in the cleaning solution in the cleaning tank for cleaning, and during cleaning, the carrier film is not in contact with the cleaning solution, so that contamination of the bonded wafer structure due to a physicochemical reaction between the cleaning solution and the carrier film is avoided, and the cleaning cleanliness of the bonded wafer structure is ensured.
When the wafer cleaning mechanism provided in this embodiment is used for cleaning, the cleaning tank 400 may be placed in the cleaning support 110, and then an appropriate amount of cleaning solution may be placed in the cleaning tank 400, where the volume of the cleaning solution is determined by the volume of the cleaning solution, which enables the cleaning solution to immerse a portion of the thickness of the wafer 300 without touching the surface of the carrier film 200; then, the membrane stretching ring 100 is placed on the cleaning support 110, when the wafer 300 faces the cleaning tank 400 and is immersed in the cleaning solution in the cleaning tank 400 for cleaning, the immersed surface of the wafer 300 reacts with the cleaning solution, so that the wafer 300 is cleaned, and in the cleaning process of the wafer 300, because the cleaning solution does not contact the surface of the carrier film 200, the wafer 300 is prevented from being polluted due to the physical and chemical reaction between the cleaning solution and the carrier film 200, the cleaning cleanliness of the wafer 300 is ensured, and the process compatibility is high.
In summary, in the wafer cleaning mechanism provided by the present invention, the carrier film is attached to the surface of the wafer, the cleaning bracket is used for fixing the film stretching ring, the cleaning tank is positioned below the film stretching ring, the bearing film is attached on the film stretching ring, the wafer is positioned in the inner ring surface of the film stretching ring, a gap is arranged between the edge of the wafer and the inner ring surface of the film stretching ring, the wafer faces the cleaning tank and is immersed in the cleaning solution in the cleaning tank, the immersed surface of the wafer reacts with the cleaning solution, so that the wafer is cleaned, in the cleaning process of the wafer, the cleaning solution is not contacted with the surface of the bearing film by controlling the volume of the cleaning solution, therefore, the wafer is prevented from being polluted due to the fact that the cleaning liquid and the bearing film are subjected to physical and chemical reactions, the cleaning cleanliness of the wafer is guaranteed, and the process compatibility is high.
The above description is only a preferred embodiment of the present invention, and does not limit the present invention in any way. It will be understood by those skilled in the art that various changes, substitutions and alterations can be made herein without departing from the spirit and scope of the invention as defined by the appended claims.

Claims (9)

1. A wafer cleaning mechanism is used for cleaning a wafer, a bearing film is attached to the surface of the wafer, the bearing film comprises a UV film or a blue film, and the wafer cleaning mechanism is characterized by comprising: a film stretching ring, a cleaning tank and a cleaning bracket;
the cleaning support is used for fixing the film stretching ring, the cleaning tank is located below the film stretching ring, the carrier film is attached to the film stretching ring, the wafer is located in the inner ring surface of the film stretching ring, a gap is formed between the edge of the wafer and the inner ring surface of the film stretching ring, the wafer faces the cleaning tank and is immersed in cleaning liquid in the cleaning tank, when part of the thickness of the wafer is immersed in the cleaning liquid, the carrier film is separated from the cleaning liquid, and the cleaning liquid is an organic solvent, so that the cleaning liquid and the carrier film are prevented from being subjected to chemical reaction to pollute the wafer.
2. The wafer cleaning mechanism of claim 1, wherein the thickness of the wafer is less than or equal to 775 um.
3. The wafer cleaning mechanism of claim 1, wherein the gravity of the wafer is less than the adhesion of the carrier film to the wafer.
4. The wafer cleaning mechanism of claim 1, wherein the adhesive force of the carrier film is 10N to 16N.
5. The wafer cleaning mechanism of claim 1, wherein a thickness of a tank wall of the cleaning tank is less than a gap between an edge of the wafer and an inner annular surface of the tension ring.
6. The wafer cleaning mechanism of claim 5, wherein the distance between the edge of the wafer and the tank wall of the cleaning tank is 10mm to 30 mm.
7. The wafer cleaning mechanism of claim 1, wherein the carrier film comprises a UV film or a blue film.
8. The wafer cleaning mechanism of claim 1, wherein the cleaning fluid is an organic solvent.
9. The wafer cleaning mechanism as recited in claim 1, wherein the cleaning support is ring-shaped, the tension ring is fixed above the cleaning support, the cleaning tank is located in the inner ring surface of the cleaning support, and a gap is formed between the tank wall of the cleaning tank and the inner ring surface of the cleaning support and the inner ring surface of the tension ring.
CN202110939158.5A 2021-08-16 2021-08-16 Wafer cleaning mechanism Active CN113634544B (en)

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Application Number Priority Date Filing Date Title
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Application Number Priority Date Filing Date Title
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CN113634544B true CN113634544B (en) 2022-09-16

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Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2667407B1 (en) * 2009-09-01 2019-01-23 EV Group GmbH Method for releasing a product substrate (e.g., a semiconductor wafer) from a support substrate using a solvent and acoustic waves by deformation of a flexible film mounted on a frame
JP5901422B2 (en) * 2012-05-15 2016-04-13 古河電気工業株式会社 Semiconductor wafer dicing method and semiconductor processing dicing tape used therefor
US20160218077A1 (en) * 2013-09-30 2016-07-28 Lintec Corporation Composite Sheet for Resin Film Formation
US11195756B2 (en) * 2014-09-19 2021-12-07 Applied Materials, Inc. Proximity contact cover ring for plasma dicing
JP2017098452A (en) * 2015-11-26 2017-06-01 株式会社ディスコ Washing method
CN105344648A (en) * 2015-12-16 2016-02-24 上海华虹宏力半导体制造有限公司 Device for cleaning skimmer cone in mass spectrometer
CN213529838U (en) * 2020-08-17 2021-06-25 上海允哲机电科技有限公司 Wafer cleaning device

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