CN113628956B - Composite aperture film and preparation method thereof - Google Patents
Composite aperture film and preparation method thereof Download PDFInfo
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- CN113628956B CN113628956B CN202110678808.5A CN202110678808A CN113628956B CN 113628956 B CN113628956 B CN 113628956B CN 202110678808 A CN202110678808 A CN 202110678808A CN 113628956 B CN113628956 B CN 113628956B
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- 239000002131 composite material Substances 0.000 title claims abstract description 29
- 238000002360 preparation method Methods 0.000 title abstract description 14
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 73
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 73
- 239000010703 silicon Substances 0.000 claims abstract description 73
- 239000000758 substrate Substances 0.000 claims abstract description 38
- 238000006056 electrooxidation reaction Methods 0.000 claims abstract description 12
- 239000010410 layer Substances 0.000 claims description 68
- 238000000034 method Methods 0.000 claims description 24
- 239000011148 porous material Substances 0.000 claims description 19
- 238000009792 diffusion process Methods 0.000 claims description 14
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 6
- 230000007797 corrosion Effects 0.000 claims description 6
- 238000005260 corrosion Methods 0.000 claims description 6
- 239000002344 surface layer Substances 0.000 claims description 6
- 238000005468 ion implantation Methods 0.000 claims description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052738 indium Inorganic materials 0.000 claims description 4
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 4
- 239000012528 membrane Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 4
- 239000002253 acid Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 238000010276 construction Methods 0.000 claims description 2
- 238000001312 dry etching Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims description 2
- 238000005498 polishing Methods 0.000 claims description 2
- 229910021642 ultra pure water Inorganic materials 0.000 claims description 2
- 239000012498 ultrapure water Substances 0.000 claims description 2
- 238000001039 wet etching Methods 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 9
- 229910021426 porous silicon Inorganic materials 0.000 abstract description 6
- 238000012546 transfer Methods 0.000 abstract description 4
- 238000012545 processing Methods 0.000 abstract description 3
- 239000010408 film Substances 0.000 description 25
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 10
- 239000000243 solution Substances 0.000 description 10
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 229910052796 boron Inorganic materials 0.000 description 5
- 238000005530 etching Methods 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 235000012239 silicon dioxide Nutrition 0.000 description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 description 3
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 230000001276 controlling effect Effects 0.000 description 3
- 239000000110 cooling liquid Substances 0.000 description 3
- 239000002019 doping agent Substances 0.000 description 3
- 230000017525 heat dissipation Effects 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000033228 biological regulation Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000002596 correlated effect Effects 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 235000019441 ethanol Nutrition 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000007517 polishing process Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- WGTYBPLFGIVFAS-UHFFFAOYSA-M tetramethylammonium hydroxide Chemical compound [OH-].C[N+](C)(C)C WGTYBPLFGIVFAS-UHFFFAOYSA-M 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 239000000908 ammonium hydroxide Substances 0.000 description 1
- 239000002585 base Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000008151 electrolyte solution Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011259 mixed solution Substances 0.000 description 1
- 229910017604 nitric acid Inorganic materials 0.000 description 1
- 238000005086 pumping Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02002—Preparing wafers
- H01L21/02005—Preparing bulk and homogeneous wafers
- H01L21/0203—Making porous regions on the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Weting (AREA)
Abstract
The invention relates to a composite aperture film which comprises a first doped silicon layer and a second doped silicon layer which are stacked, wherein nano-scale through holes are distributed on the first doped silicon layer, micro-scale through holes are distributed on the second doped silicon layer, and the doping concentration of the first doped silicon layer is larger than that of the second doped silicon layer. The invention also relates to a preparation method of the composite aperture film. The composite aperture film has the characteristic of changing aperture across micro-nano scale in the thickness direction, and has improved performance in the fields of biosensing, optics, heat transfer and the like. The preparation method solves the technical problem that the conventional micro-nano processing technology is difficult to realize the preparation of the trans-scale variable-aperture porous film, changes the doping concentration of the surface of the substrate through the surface doping technology, and prepares the porous silicon film with the trans-micron-nano-scale variable-aperture characteristic in the thickness direction through the electrochemical corrosion technology.
Description
Technical Field
The invention relates to the technical field of semiconductor materials, in particular to a composite aperture film and a preparation method thereof.
Background
The pore-size-variable porous film structure has gradient pore-size distribution in the thickness direction, and has important application value in the fields of biosensing, optics, heat transfer and other research. However, the pore diameters of the existing variable pore diameter thin film are mostly distributed on the same scale, taking a porous silicon thin film as an example, pore diameter regulation and control in the thickness direction can be realized on the same substrate by changing parameters such as etching current, electrolyte solution proportion and the like, but the regulation and control are regulated in a small range under the same scale, so that further improvement of the performance of the variable pore diameter porous silicon thin film in the application fields is limited. Therefore, there is a need to develop a trans-scale pore size porous silicon film.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provide a composite aperture film which has a micro-nano scale-crossing pore-changing characteristic in the thickness direction and has improved performance in the fields of biosensing, optics, heat transfer and the like.
The invention also aims to provide a preparation method of the composite aperture film, which has simple and efficient process steps.
In order to achieve the above object, the present invention provides the following technical solutions.
The composite aperture film comprises a first doped silicon layer and a second doped silicon layer which are stacked, wherein nano-scale through holes are distributed on the first doped silicon layer, micro-scale through holes are distributed on the second doped silicon layer, and the doping concentration of the second doped silicon layer is larger than that of the first doped silicon layer.
The preparation method of the composite aperture film comprises the following steps:
pretreating the medium doped silicon substrate;
Doping the shallow surface layer of the moderately doped silicon substrate to convert the shallow surface layer into a heavily doped silicon layer;
after the heavily doped silicon layer is obtained, carrying out electrochemical corrosion on the whole substrate; and
And thinning the surface of the substrate far away from the heavily doped silicon layer.
Compared with the prior art, the invention achieves the following technical effects:
1. The composite aperture film has the characteristic of changing aperture across micro-nano scale in the thickness direction, and has improved performance in the fields of biosensing, optics, heat transfer and the like.
2. The preparation method of the invention can simply and efficiently prepare the composite aperture film. The preparation method solves the technical problem that the conventional micro-nano processing technology is difficult to realize the preparation of the trans-scale variable-aperture porous film, changes the doping concentration of the surface of the substrate through the surface doping technology, and prepares the porous silicon film with the trans-micron-nano-scale variable-aperture characteristic in the thickness direction through the electrochemical corrosion technology.
Drawings
Various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to designate like parts throughout the figures. In the drawings:
FIG. 1 is a schematic cross-sectional view of a composite pore size membrane of the present invention.
FIG. 2 is a flow chart of a method for preparing a composite aperture film of the present invention.
Description of the reference numerals
100 Is a composite aperture film, 101 is a first doped silicon layer, and 102 is a second doped silicon layer.
Detailed Description
Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. It should be understood that the description is only exemplary and is not intended to limit the scope of the present disclosure. In addition, in the following description, descriptions of well-known structures and techniques are omitted so as not to unnecessarily obscure the concepts of the present disclosure.
Various structural schematic diagrams according to embodiments of the present disclosure are shown in the drawings. The figures are not drawn to scale, wherein certain details are exaggerated for clarity of presentation and may have been omitted. The shapes of the various regions, layers and relative sizes, positional relationships between them shown in the drawings are merely exemplary, may in practice deviate due to manufacturing tolerances or technical limitations, and one skilled in the art may additionally design regions/layers having different shapes, sizes, relative positions as actually required.
In the context of the present disclosure, when a layer/element is referred to as being "on" another layer/element, it can be directly on the other layer/element or intervening layers/elements may be present therebetween. In addition, if one layer/element is located "on" another layer/element in one orientation, that layer/element may be located "under" the other layer/element when the orientation is turned.
Since the pore diameters of the existing variable pore diameter porous films are distributed on the same scale, this limits further improvement of the performance of the variable pore diameter porous films in many application fields. To this end, the present invention provides an improved porous membrane, which is further described below with reference to the specific figures.
As shown in fig. 1, the composite aperture film 100 of the present invention includes a first doped silicon layer 101 and a second doped silicon layer 102 stacked, wherein nano-scale through holes are distributed on the first doped silicon layer 101, micro-scale through holes are distributed on the second doped silicon layer 102, and the doping concentration of the first doped silicon layer 101 is greater than the doping concentration of the second doped silicon layer 102.
The first doped silicon layer 101 is a heavily doped silicon layer having a resistivity of 0.01Ω·cm or less. The second doped silicon layer 102 is a moderately doped silicon layer having a resistivity in the range of 1-30Ω -cm, preferably 1-10Ω -cm. The resistivity directly reflects the doping level of the silicon layer. The heavily doped silicon layer and the moderately doped silicon layer may be p-type silicon substrates doped with boron element, aluminum element, gallium element or indium element. The aperture of the nano-scale through hole is below 50nm, and the depth is below 5 mu m; the aperture of the micron-scale through hole is more than 2 mu m, and the depth is less than 495 mu m.
The composite aperture film 100 is of unitary construction.
The composite aperture film has the characteristic of changing aperture across micro-nano scale in the thickness direction, can be used in the field of heat dissipation, can provide strong capillary pressure difference as liquid supply force when cooling liquid is evaporated, realizes spontaneous flow of the cooling liquid, ensures that the whole cooling device does not need to be externally connected with a pumping system, reduces the occupied space of a heat dissipation system, reduces power consumption and is easy to realize heat dissipation of chips in a limited space. The second doped silicon layer 102 is used for supporting the first doped silicon layer 101, which is beneficial to reducing the flowing resistance and ensuring the efficient transportation of the cooling liquid.
The composite pore diameter film of the present invention can be prepared by the process shown in fig. 2, and is specifically as follows.
The medium doped silicon substrate is pretreated.
The resistivity of the moderately doped silicon substrate ranges from 1 to 30Ω·cm, preferably from 1 to 10Ω·cm. The moderately doped silicon substrate may be a p-type silicon substrate doped with boron element, aluminum element, gallium element or indium element.
The pretreatment comprises the following steps: the surface of the medium doped silicon substrate is chemically treated by acid, alkali and ultrapure water. The acid includes hydrofluoric acid, hydrochloric acid, phosphoric acid, nitric acid, and the like. The base includes sodium hydroxide, potassium hydroxide, ammonium hydroxide, tetramethylammonium hydroxide, and the like.
And doping the shallow surface layer of the moderately doped silicon substrate to convert the shallow surface layer into a heavily doped silicon layer.
The doping is a diffusion process or an ion implantation process.
The diffusion process includes pre-deposition and advancing. In the pre-deposition process, the diffusion temperature is set to 800-1100 ℃ and the diffusion time is set to 10-30 minutes. During the advancing process, the diffusion temperature is set to 1000-1250 ℃. Different doping concentrations and doping layer depths can be obtained by controlling the diffusion temperature and diffusion time during the advancement process.
The process parameters of the ion implantation process include: the doping amount is 1×10 15cm-2-10×1015cm-2, and the energy of the ion implanter is 50-200keV. Different surface doping concentrations and surface doping layer depths can be obtained by controlling the dopant amount and the energy of the ion implanter.
Preferably, a silicon dioxide layer is grown on the surface of the substrate by a thermal oxidation process before ion implantation, and the thickness of the silicon dioxide layer can be
In the present invention, the resistivity of the heavily doped silicon layer is 0.01Ω·cm or less, and the thickness of the heavily doped silicon layer is 5 μm or less.
The impurity source of the doping process is a boron source, an aluminum source, a gallium source or an indium source. The impurity source is the same as the doping element of the doped silicon substrate itself.
After the heavily doped silicon layer is obtained, the whole substrate is subjected to electrochemical corrosion.
The etching solution adopted by the electrochemical etching is a mixed solution of hydrofluoric acid solution and ethanol. The volume ratio of the hydrofluoric acid solution to the ethanol is not particularly limited in the present invention, and may be any value greater than 0 and less than 100, for example, 1:1. The corrosion current is 1-100mA/cm 2, preferably 10-50mA/cm 2.
The pore diameter of the composite pore diameter structure prepared by adopting the electrochemical corrosion process is mainly influenced by the current density of the electrochemical corrosion process and the doping degree of the substrate. The size of the aperture is positively correlated with the current density and negatively correlated with the doping level of the substrate. Under the same electrochemical corrosion reaction conditions, the heavily doped substrate portion corresponds to the formation of a porous structure with nanoscale pore sizes, while the moderately doped substrate portion generally corresponds to the formation of a porous structure with microscale pore sizes.
And thinning the surface of the substrate far away from the heavily doped silicon layer.
The method of the present invention is not particularly limited, and the surface of the substrate remote from the heavily doped silicon layer may be thinned by chemical mechanical polishing, wet etching, dry etching, or a combination thereof, until the porous structure obtained by the electrochemical etching step is released.
The preparation method of the invention can simply and efficiently prepare the composite aperture film. The preparation method solves the technical problem that the conventional micro-nano processing technology is difficult to realize the preparation of the trans-scale variable-aperture porous film, changes the doping concentration of the surface of the substrate through the surface doping technology, and prepares the porous silicon film with the trans-micron-nano-scale variable-aperture characteristic in the thickness direction through the electrochemical corrosion technology.
The invention is further illustrated in the following in connection with two specific examples, but the invention is not limited thereto.
Example 1
And 5 omega cm P-type silicon substrate is selected for pretreatment. Then, a layer of thermal oxidation process is adopted to grow on the surface of the substrateIs a silicon dioxide layer of the silicon dioxide layer. Then, the doping concentration of the shallow layer on the surface of the substrate is regulated and controlled by adopting an ion implantation process, and the process parameters are set as follows: the dopant amount was 5×10 15cm-2, the dopant type was boron, and the energy range was 150KeV. And preparing a trans-scale porous structure on the surface of the substrate by adopting an electrochemical corrosion process, wherein the corrosion solution is formed by mixing hydrofluoric acid solution and absolute ethyl alcohol solution in a volume of 1:1, and the corrosion current is set to be 10mA/cm 2. And finally, thinning the back surface of the silicon substrate by adopting a chemical mechanical polishing process until the blind holes become through holes, thereby forming the composite aperture film.
Example 2
And 5 omega cm P-type silicon substrate is selected for pretreatment. Thereafter, a pre-deposition diffusion of the surface source was performed, the diffusion temperature was set at 900 ℃ and the diffusion time was 20 minutes. Then, boron is selected as a diffusion impurity source for promotion diffusion, and different surface doping concentrations and surface doping layer depths are obtained by controlling the diffusion temperature (1000-1250 ℃) and time. And then preparing a trans-scale porous structure on the surface of the substrate by adopting an electrochemical corrosion process, wherein the corrosion solution is formed by mixing hydrofluoric acid solution and absolute ethyl alcohol solution in a volume of 1:1, and the corrosion current is set to be 10mA/cm 2. And finally, thinning the back surface of the silicon substrate by adopting a chemical mechanical polishing process until the blind holes become through holes, thereby forming the composite aperture film.
The present invention is not limited to the above-mentioned embodiments, and any changes or substitutions that can be easily understood by those skilled in the art within the technical scope of the present invention are intended to be included in the scope of the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (8)
1. The composite aperture film is characterized by comprising a first doped silicon layer and a second doped silicon layer which are stacked, wherein nano-scale through holes are distributed on the first doped silicon layer, micro-scale through holes are distributed on the second doped silicon layer, and the doping concentration of the first doped silicon layer is larger than that of the second doped silicon layer;
The first doped silicon layer is a heavily doped silicon layer, and the resistivity of the first doped silicon layer is below 0.01Ω & cm; the second doped silicon layer is a moderately doped silicon layer, and the resistivity of the second doped silicon layer is in the range of 1-30Ω & cm.
2. The composite pore size membrane of claim 1, wherein the composite pore size membrane is of unitary construction.
3. The composite aperture film of claim 2, wherein the heavily doped silicon layer and the moderately doped silicon layer are p-type silicon substrates doped with elemental boron, elemental aluminum, elemental gallium, or elemental indium.
4. The composite pore diameter film according to claim 1 or 2, wherein the pore diameter of the nano-scale through hole is 50nm or less and the depth is 5 μm or less; the aperture of the micron-scale through hole is more than 2 mu m, and the depth is less than 495 mu m.
5. The method for producing a composite pore diameter film according to any one of claims 1 to 4, comprising:
pretreating the medium doped silicon substrate;
Doping the shallow surface layer of the moderately doped silicon substrate to convert the shallow surface layer into a heavily doped silicon layer;
After the heavily doped silicon layer is obtained, carrying out electrochemical corrosion on the whole substrate, wherein the electrochemical corrosion process adopts a corrosion current of 10-50mA/cm 2; and
And thinning the surface of the substrate far away from the heavily doped silicon layer.
6. The method of claim 5, wherein the pretreatment comprises: the surface of the moderately doped silicon substrate is chemically treated by an acid, a base and ultra-pure water.
7. The method of claim 5 or 6, wherein the doping is a diffusion process or an ion implantation process.
8. The method of claim 5 or 6, wherein the thinning is performed by chemical mechanical polishing, mechanical lapping, wet etching, dry etching, or a combination thereof.
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| CN105439074A (en) * | 2015-12-24 | 2016-03-30 | 杭州士兰微电子股份有限公司 | Cavity film and production method thereof |
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| CN105502278A (en) * | 2015-12-24 | 2016-04-20 | 杭州士兰微电子股份有限公司 | Cavity film and manufacturing method thereof |
| CN110620167A (en) * | 2019-08-26 | 2019-12-27 | 华南师范大学 | Deep ultraviolet LED based on large-area substrate stripping and preparation method thereof |
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| CN105460887A (en) * | 2015-12-17 | 2016-04-06 | 中国科学院苏州纳米技术与纳米仿生研究所 | Preparation method of graphical porous silicon |
| CN105439074A (en) * | 2015-12-24 | 2016-03-30 | 杭州士兰微电子股份有限公司 | Cavity film and production method thereof |
| CN105502278A (en) * | 2015-12-24 | 2016-04-20 | 杭州士兰微电子股份有限公司 | Cavity film and manufacturing method thereof |
| CN110620167A (en) * | 2019-08-26 | 2019-12-27 | 华南师范大学 | Deep ultraviolet LED based on large-area substrate stripping and preparation method thereof |
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