CN113625947A - Data error correction method, device and equipment and computer readable storage medium - Google Patents
Data error correction method, device and equipment and computer readable storage medium Download PDFInfo
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- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
- G06F3/0601—Interfaces specially adapted for storage systems
- G06F3/0602—Interfaces specially adapted for storage systems specifically adapted to achieve a particular effect
- G06F3/0614—Improving the reliability of storage systems
- G06F3/0616—Improving the reliability of storage systems in relation to life time, e.g. increasing Mean Time Between Failures [MTBF]
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F11/00—Error detection; Error correction; Monitoring
- G06F11/07—Responding to the occurrence of a fault, e.g. fault tolerance
- G06F11/08—Error detection or correction by redundancy in data representation, e.g. by using checking codes
- G06F11/10—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's
- G06F11/1004—Adding special bits or symbols to the coded information, e.g. parity check, casting out 9's or 11's to protect a block of data words, e.g. CRC or checksum
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
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- G06F3/06—Digital input from, or digital output to, record carriers, e.g. RAID, emulated record carriers or networked record carriers
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- Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management
Abstract
The invention discloses a data error correction method, which comprises the following steps: when the solid state disk is detected to be powered on and started, calling a pre-training obtained offset voltage parameter set; traversing the offset voltage parameter group to read the unfilled data block before last power-off; judging whether the reading is successful; and if so, stopping traversing, and determining the read data set as a target data block with error correction completed on the data block which is not fully written. The data error correction method provided by the invention reduces the consumption of capacitance time, improves the success rate of data error correction, and greatly reduces the influence on the service life of a hard disk. The invention also discloses a data error correction device, equipment and a storage medium, which have corresponding technical effects.
Description
Technical Field
The present invention relates to the field of storage technologies, and in particular, to a data error correction method, apparatus, device, and computer readable storage medium.
Background
According to the electrical characteristics of a computer flash memory device (NAND) in a Solid State Drive (SSD), a data block (block) enters an open State after a page (page) is written, and enters a close State after all pages are written. For a data block in a closed state, the probability (Bit Error Rate, BER) of Bit errors in the data is not obviously increased when the data block is placed offline for a long time, and the Error Recovery Flow (ERF) can be used for correcting when the data block is read. For the data block in the open state, if the data block is placed offline for a long time, due to charge leakage and the like, the probability of Bit errors in the last written 4 page data is higher, and is particularly obvious in the later life stage of the solid state disk.
In normal operation, a block of data is closed before a write of the next block of data is performed. However, when power-off is encountered, the data block is approximately unsatisfied with writing, namely in an open state, and the power-off is placed offline or stored for a long time and then is powered on. When reading the last written user data before power down, the error probability of Bit is high, and error correction is needed at this time.
The conventional data error correction method is mainly to count the time when the first page is written for the data block in the open state, and fill four pages with dummy data (dummy) if the data block is not closed within a specified time (for example, 60 minutes), that is, the user data is not full of the data block. When power is off again, after user data is written in a flash mode, the four pages are directly filled in with null data without waiting for delay time. That is, the page with higher error probability of Bit is dropped on the empty data page, that is, the user data page before the empty data page is protected. However, this solution has two disadvantages: firstly, when abnormal power-off occurs, capacitance time is consumed for filling four blank data pages, which may cause the risk of incomplete power-off due to abnormal power-off, or four blank data pages may not be filled, which may cause data still to be unrecoverable, and the success rate of data error correction is low. Secondly, null data is non-user data, which may improve write amplification of the solid state disk and affect the disk lifetime (PE).
In summary, how to effectively solve the problems of capacitance time consumption, low success rate of data error correction, influence on hard disk service life, and the like of the existing data error correction method is a problem that needs to be solved urgently by a person skilled in the art at present.
Disclosure of Invention
The invention aims to provide a data error correction method, which reduces the consumption of capacitance time, improves the success rate of data error correction and greatly reduces the influence on the service life of a hard disk; another object of the present invention is to provide a data error correction apparatus, a device and a computer-readable storage medium.
In order to solve the technical problems, the invention provides the following technical scheme:
a method of data error correction, comprising:
when the solid state disk is detected to be powered on and started, calling a pre-training obtained offset voltage parameter set;
traversing the offset voltage parameter group to read the unfilled data block before last power-off;
judging whether the reading is successful;
and if so, stopping traversing, and determining the read data set as a target data block with the error correction completed on the data block which is not fully written.
In an embodiment of the present invention, after detecting a power-on start of a solid state disk, before invoking a set of offset voltage parameters obtained by pre-training, the method further includes:
correcting the error of the data block which is not fully written by using a preset error recovery process;
judging whether the error correction is successful;
if so, determining the data set obtained by error correction as the target data block;
and if not, executing the step of obtaining the offset voltage parameter group obtained by the pre-training.
In one embodiment of the present invention, the method further comprises:
and when the traversal of the offset voltage parameter group is completed and the reading fails, performing data error operation.
In an embodiment of the present invention, the method for retrieving the pre-trained offset voltage parameter set includes:
acquiring current service life information of the solid state disk;
determining a target preset life range corresponding to the current life information;
calling an offset voltage parameter group corresponding to the target preset life range from an offset voltage parameter group set obtained by pre-training; and the offset voltage parameter group set stores the corresponding relation between each preset life range and each offset voltage parameter group.
A data error correction apparatus comprising:
the parameter set calling module is used for calling a pre-trained offset voltage parameter set when the solid state disk is detected to be powered on and started;
the data block reading module is used for traversing the offset voltage parameter group to read the data block which is not fully written before the last power-off;
the first judgment module is used for judging whether the reading is successful;
and the first data block determining module is used for stopping traversal when the reading is determined to be successful, and determining the read data set as a target data block of which the error correction is completed on the data block which is not fully written.
In one embodiment of the present invention, the method further comprises:
the data block error correction module is used for correcting the error of the incompletely written data block by utilizing a preset error recovery process after detecting that the solid state disk is electrified and started and before calling a pre-trained offset voltage parameter group;
the second judgment module is used for judging whether the error correction is successful;
a second data block determining module, configured to determine, when error correction is successful, a data set obtained by error correction as the target data block;
the parameter set retrieving module is specifically a module for retrieving a pre-trained offset voltage parameter set when error correction fails.
In one embodiment of the present invention, the method further comprises:
and the error reporting module is used for performing error reporting operation when the traversal of the offset voltage parameter group is completed and the reading fails.
In an embodiment of the present invention, the parameter set retrieving module includes:
the service life information acquisition submodule is used for acquiring the current service life information of the solid state disk;
the service life range determining submodule is used for determining a target preset service life range corresponding to the current service life information;
the parameter set calling submodule is used for calling an offset voltage parameter set corresponding to the target preset life range from an offset voltage parameter set obtained by pre-training; and the offset voltage parameter group set stores the corresponding relation between each preset life range and each offset voltage parameter group.
A data error correction apparatus comprising:
a memory for storing a computer program;
a processor for implementing the steps of the data error correction method as described above when executing the computer program.
A computer-readable storage medium, having stored thereon a computer program which, when being executed by a processor, carries out the steps of the data error correction method as set forth above.
According to the data error correction method provided by the invention, when the solid state disk is detected to be powered on and started, a pre-training obtained offset voltage parameter group is called; traversing the offset voltage parameter group to read the unfilled data block before last power-off; judging whether the reading is successful; and if so, stopping traversing, and determining the read data set as a target data block with error correction completed on the data block which is not fully written.
According to the technical scheme, the characteristics of the data blocks in the open state of the solid state disk are analyzed through pre-training, for example, the data blocks under different written pages can be selected in advance for training, so that the voltage offset condition of the internal data of the data blocks after the solid state disk is opened for a long time is obtained, and therefore the offset voltage parameter group consisting of the optimal voltages is obtained. When the solid state disk is powered on and started and error correction needs to be performed on the data blocks which are not fully written and stored for a long time in an off-line mode, the data blocks which are not fully written are directly read by traversing the offset voltage parameter group, and the error correction on the data blocks which are not fully written is achieved. Empty data does not need to be filled, so that the consumption of capacitance time is reduced, the success rate of data error correction is improved, and the influence on the service life of the hard disk is greatly reduced.
Correspondingly, the invention also provides a data error correction device, equipment and a computer readable storage medium corresponding to the data error correction method, which have the technical effects and are not described herein again.
Drawings
In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings used in the description of the embodiments or the prior art will be briefly described below, it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a flow chart of an implementation of a data error correction method according to an embodiment of the present invention;
FIG. 2 is a flow chart of another implementation of a data error correction method according to an embodiment of the present invention;
FIG. 3 is a block diagram of a data error correction apparatus according to an embodiment of the present invention;
FIG. 4 is a block diagram of a data error correction apparatus according to an embodiment of the present invention;
fig. 5 is a schematic structural diagram of a data error correction apparatus provided in this embodiment.
Detailed Description
In order that those skilled in the art will better understand the disclosure, the invention will be described in further detail with reference to the accompanying drawings and specific embodiments. It is to be understood that the described embodiments are merely exemplary of the invention, and not restrictive of the full scope of the invention. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1, fig. 1 is a flowchart of an implementation of a data error correction method according to an embodiment of the present invention, where the method includes the following steps:
s101: and when the solid state disk is detected to be powered on and started, calling the offset voltage parameter group obtained by pre-training.
The optimal offset voltage parameter group for correcting the error of the data block which is not fully written before the last power-down is obtained through pre-training, so that the error of the data block which is not fully written can be successfully corrected no matter how many pages of the data block which is not fully written before the last power-down are written in the offset voltage parameter group. And when the solid state disk is detected to be powered on and started under the condition that the data block which is not fully written before last power-off and is placed offline for a long time exists, calling the offset voltage parameter group obtained by pre-training.
S102: and traversing the offset voltage parameter group to read the unfilled data block before last power-off.
After the offset voltage parameter group obtained by pre-training is obtained, reading the unfilled data block before last power-off by traversing the offset voltage parameter group.
S103: and judging whether the reading is successful, if so, executing the step S104, and if not, executing the step S105.
After the traversal of the offset voltage parameter group is performed to read the unfilled data block before last power-off, whether reading is successful is judged, if the size of the data block of the unfilled data before last power-off can be recorded in advance, whether reading is successful is determined by comparing the size of the currently read data block with the original recording size, if so, the step is performed, if not, the step is performed, and the step is performed.
S104: stopping the traversal, and determining the read data set as a target data block with error correction completed on the data block which is not fully written.
When the read is determined to be successful, the step of describing that the offset voltage parameter group capable of successfully correcting the error of the incompletely written data block is traversed, the step of continuously traversing the offset voltage parameters in the offset voltage parameter group is not needed, the traversal is stopped, and the read data set is determined to be the target data block of which the error correction of the incompletely written data block is completed, so that the error correction of the incompletely written data block before the last power-off is completed. And reading the unfilled data block by traversing the offset voltage parameter group to realize error correction of the unfilled data block. Empty data does not need to be filled, so that the consumption of capacitance time is reduced, the success rate of data error correction is improved, the reliability of data is improved, and the influence on the service life of the hard disk is greatly reduced.
S105: and when the traversal of the offset voltage parameter group is completed and the reading fails, performing data error operation.
And when the failure in reading is determined, indicating that the offset voltage parameter group which can successfully correct the error of the incomplete data block is not traversed, completing traversal of the offset voltage parameter group and failing in reading, and performing error operation on data, thereby indicating operation and maintenance personnel to know the data condition of the incomplete data block stored in the solid state disk after the solid state disk is powered on in time.
According to the technical scheme, the characteristics of the data blocks in the open state of the solid state disk are analyzed through pre-training, for example, the data blocks under different written pages can be selected in advance for training, so that the voltage offset condition of the internal data of the data blocks after the solid state disk is opened for a long time is obtained, and therefore the offset voltage parameter group consisting of the optimal voltages is obtained. When the solid state disk is powered on and started and error correction needs to be performed on the data blocks which are not fully written and stored for a long time in an off-line mode, the data blocks which are not fully written are directly read by traversing the offset voltage parameter group, and the error correction on the data blocks which are not fully written is achieved. Empty data does not need to be filled, so that the consumption of capacitance time is reduced, the success rate of data error correction is improved, and the influence on the service life of the hard disk is greatly reduced.
It should be noted that, based on the above embodiments, the embodiments of the present invention also provide corresponding improvements. In the following embodiments, steps that are the same as or correspond to those in the above embodiments may be referred to one another, and corresponding advantageous effects may also be referred to one another, which is not described in detail in the following modified embodiments.
Referring to fig. 2, fig. 2 is a flowchart of another implementation of a data error correction method according to an embodiment of the present invention, where the method may include the following steps:
s201: and when the solid state disk is detected to be powered on and started, correcting the error of the data block which is not fully written by using a preset error recovery process.
And presetting an error recovery flow for the data block which is not fully written before last power-off when the solid state disk is powered on and started. And when the solid state disk is detected to be powered on and started, correcting the error of the data block which is not fully written by using a preset error recovery process.
S202: and judging whether the error correction is successful, if so, executing step S203, and if not, executing step S204.
And (3) correcting the unfilled data block by using a preset error recovery process, and judging whether the error correction is successful, if so, indicating that the unfilled data block before last power-off is successfully corrected by using the preset error recovery process without further traversing the offset voltage parameter group, executing step S203, otherwise, indicating that the unfilled data block before last power-off is unsuccessfully corrected by using the preset error recovery process, requiring further traversing the offset voltage parameter group, and executing step S204.
The data block which is not fully written before last power-off is corrected by the preset error recovery process, and if the data block which is not fully written before last power-off is successfully corrected by the preset error recovery process, the data error correction efficiency is improved.
S203: and determining the data set obtained by error correction as a target data block of which the error correction is completed on the data block which is not fully written.
When the situation that the data block which is not fully written before last power-off is successfully corrected through the preset error recovery process is determined, a further traversing process of the offset voltage parameter group is not needed, and the data set obtained through error correction is directly determined as a target data block of which the error correction is completed on the data block which is not fully written, so that the data error correction process is completed.
S204: and acquiring the current service life information of the solid state disk.
When it is determined that the correction of the data block which is not fully written before the last power-down through the preset error recovery procedure fails, a further offset voltage parameter set traversal procedure needs to be performed. And acquiring the current service life information of the solid state disk, for example, calculating the current service life information of the solid state disk according to the erased times and the erasable times.
S205: and determining a target preset life range corresponding to the current life information.
When the offset voltage parameter group is trained, the offset voltage parameter group is distinguished and trained according to the service life of the solid state disk, and a corresponding relation exists between each offset voltage parameter group obtained through training and each service life information. After the current service life information of the solid state disk is acquired, a target preset service life range corresponding to the current service life information is determined.
S206: and calling an offset voltage parameter group corresponding to the target preset life range from the offset voltage parameter group set obtained by pre-training.
The offset voltage parameter group set stores the corresponding relation between each preset life range and each offset voltage parameter group.
Since the offset voltage parameter set (e.g., firmware code data set) stores the corresponding relationship between each preset life span and each offset voltage parameter set, after determining the target preset life span corresponding to the current life span information, the offset voltage parameter set corresponding to the target preset life span is retrieved from the offset voltage parameter set obtained by pre-training. By carrying out corresponding offset voltage parameter group training division according to the service life range of the solid state disk, the success rate of data error correction is further improved. And the error correction is carried out in a retry manner, so that the probability of successful data error correction is improved.
The training process of the offset voltage parameter set may include: and performing characteristic analysis on the computer flash memory device, performing characteristic analysis on the data blocks in the open state under different preset service life ranges, and sampling a plurality of data blocks. And respectively writing a page of the plurality of data blocks, wherein one third of the total page number of the data blocks and two thirds of the total page number of the data blocks are written, and then storing the data blocks offline for a long time. After offline storage, different offset voltages are tried to read data after power-on until reading is successful, if a probability threshold value for determining that reading is successful Bit error is preset, when the reading data Bit error is lower than the threshold value, the reading is determined to be successful, and the offset voltage is recorded. And by analogy, finding out an optimal set of offset voltages, namely that the various on-state data blocks can be successfully read.
S207: and traversing the offset voltage parameter group to read the unfilled data block before last power-off.
S208: whether the reading is successful is judged, if so, step S209 is executed, and if not, step S210 is executed.
S209: stopping the traversal, and determining the read data set as a target data block with error correction completed on the data block which is not fully written.
S210: and when the traversal of the offset voltage parameter group is completed and the reading fails, performing data error operation.
The present embodiment is different from the first embodiment corresponding to the technical solution claimed in independent claim 1, and the technical solutions claimed in the dependent claims 2 to 4 are added, and of course, according to different practical situations and requirements, the technical solutions claimed in the dependent claims can be flexibly combined on the basis of not affecting the completeness of the solutions, so as to better meet the requirements of different use scenarios.
Corresponding to the above method embodiments, the present invention further provides a data error correction apparatus, and the data error correction apparatus described below and the data error correction method described above may be referred to in correspondence with each other.
Referring to fig. 3, fig. 3 is a block diagram of a data error correction apparatus according to an embodiment of the present invention, where the apparatus may include:
the parameter set calling module 31 is configured to, when it is detected that the solid state disk is powered on and started, call a pre-training offset voltage parameter set;
the data block reading module 32 is configured to traverse the offset voltage parameter set to perform a reading operation on the data block that is not fully written before the last power-down;
a first judging module 33, configured to judge whether reading is successful;
and a first data block determining module 34, configured to stop the traversal when it is determined that the reading is successful, and determine the read data set as a target data block for which error correction is completed on the data block which is not fully written.
According to the technical scheme, the characteristics of the data blocks in the open state of the solid state disk are analyzed through pre-training, for example, the data blocks under different written pages can be selected in advance for training, so that the voltage offset condition of the internal data of the data blocks after the solid state disk is opened for a long time is obtained, and therefore the offset voltage parameter group consisting of the optimal voltages is obtained. When the solid state disk is powered on and started and error correction needs to be performed on the data blocks which are not fully written and stored for a long time in an off-line mode, the data blocks which are not fully written are directly read by traversing the offset voltage parameter group, and the error correction on the data blocks which are not fully written is achieved. Empty data does not need to be filled, so that the consumption of capacitance time is reduced, the success rate of data error correction is improved, and the influence on the service life of the hard disk is greatly reduced.
In one embodiment of the present invention, the apparatus may further include:
the data block error correction module is used for correcting the error of the data block which is not fully written by using a preset error recovery process after the solid state disk is detected to be powered on and started and before the offset voltage parameter group obtained by pre-training is called;
the second judgment module is used for judging whether the error correction is successful;
the second data block determining module is used for determining the data set obtained by error correction as a target data block when the error correction is successful;
the parameter set retrieving module 31 is specifically a module for retrieving a pre-trained offset voltage parameter set when error correction fails.
In one embodiment of the present invention, the apparatus may further include:
and the error reporting module is used for performing error reporting operation when the traversal of the offset voltage parameter group is completed and the reading fails.
In an embodiment of the present invention, the parameter set retrieving module 31 includes:
the service life information acquisition submodule is used for acquiring the current service life information of the solid state disk;
the service life range determining submodule is used for determining a target preset service life range corresponding to the current service life information;
the parameter set calling submodule is used for calling an offset voltage parameter set corresponding to a target preset life range from an offset voltage parameter set obtained by pre-training; the offset voltage parameter group set stores the corresponding relation between each preset life range and each offset voltage parameter group.
Corresponding to the above method embodiment, referring to fig. 4, fig. 4 is a schematic diagram of a data error correction apparatus provided by the present invention, where the apparatus may include:
a memory 332 for storing a computer program;
a processor 322 for implementing the steps of the data error correction method of the above-mentioned method embodiment when executing the computer program.
Specifically, referring to fig. 5, fig. 5 is a schematic diagram of a specific structure of a data error correction apparatus provided in this embodiment, which may generate a relatively large difference due to different configurations or performances, and may include a processor (CPU) 322 (e.g., one or more processors) and a memory 332, where the memory 332 stores one or more computer applications 342 or data 344. Memory 332 may be, among other things, transient or persistent storage. The program stored in memory 332 may include one or more modules (not shown), each of which may include a sequence of instructions operating on a data processing device. Still further, the processor 322 may be configured to communicate with the memory 332 to execute a series of instruction operations in the memory 332 on the data error correction device 301.
The data error correction apparatus 301 may also include one or more power supplies 326, one or more wired or wireless network interfaces 350, one or more input-output interfaces 358, and/or one or more operating systems 341.
The steps in the data error correction method described above may be implemented by the structure of a data error correction apparatus.
Corresponding to the above method embodiment, the present invention further provides a computer-readable storage medium having a computer program stored thereon, the computer program, when executed by a processor, implementing the steps of:
when the solid state disk is detected to be powered on and started, calling a pre-training obtained offset voltage parameter set; traversing the offset voltage parameter group to read the unfilled data block before last power-off; judging whether the reading is successful; and if so, stopping traversing, and determining the read data set as a target data block with error correction completed on the data block which is not fully written.
The computer-readable storage medium may include: various media capable of storing program codes, such as a usb disk, a removable hard disk, a Read-Only Memory (ROM), a Random Access Memory (RAM), a magnetic disk, or an optical disk.
For the introduction of the computer-readable storage medium provided by the present invention, please refer to the above method embodiments, which are not described herein again.
The embodiments are described in a progressive manner, each embodiment focuses on differences from other embodiments, and the same or similar parts among the embodiments are referred to each other. The device, the apparatus and the computer-readable storage medium disclosed in the embodiments correspond to the method disclosed in the embodiments, so that the description is simple, and the relevant points can be referred to the description of the method.
The principle and the implementation of the present invention are explained in the present application by using specific examples, and the above description of the embodiments is only used to help understanding the technical solution and the core idea of the present invention. It should be noted that, for those skilled in the art, it is possible to make various improvements and modifications to the present invention without departing from the principle of the present invention, and those improvements and modifications also fall within the scope of the claims of the present invention.
Claims (10)
1. A method of data error correction, comprising:
when the solid state disk is detected to be powered on and started, calling a pre-training obtained offset voltage parameter set;
traversing the offset voltage parameter group to read the unfilled data block before last power-off;
judging whether the reading is successful;
and if so, stopping traversing, and determining the read data set as a target data block with the error correction completed on the data block which is not fully written.
2. The data error correction method of claim 1, wherein after detecting a power-on start of the solid state disk, before invoking the pre-trained set of offset voltage parameters, further comprising:
correcting the error of the data block which is not fully written by using a preset error recovery process;
judging whether the error correction is successful;
if so, determining the data set obtained by error correction as the target data block;
and if not, executing the step of obtaining the offset voltage parameter group obtained by the pre-training.
3. The data error correction method of claim 1, further comprising:
and when the traversal of the offset voltage parameter group is completed and the reading fails, performing data error operation.
4. A method according to any one of claims 1 to 3, wherein the step of retrieving a pre-trained set of offset voltage parameters comprises:
acquiring current service life information of the solid state disk;
determining a target preset life range corresponding to the current life information;
calling an offset voltage parameter group corresponding to the target preset life range from an offset voltage parameter group set obtained by pre-training; and the offset voltage parameter group set stores the corresponding relation between each preset life range and each offset voltage parameter group.
5. A data error correction apparatus, comprising:
the parameter set calling module is used for calling a pre-trained offset voltage parameter set when the solid state disk is detected to be powered on and started;
the data block reading module is used for traversing the offset voltage parameter group to read the data block which is not fully written before the last power-off;
the first judgment module is used for judging whether the reading is successful;
and the first data block determining module is used for stopping traversal when the reading is determined to be successful, and determining the read data set as a target data block of which the error correction is completed on the data block which is not fully written.
6. The data error correction apparatus of claim 5, further comprising:
the data block error correction module is used for correcting the error of the incompletely written data block by utilizing a preset error recovery process after detecting that the solid state disk is electrified and started and before calling a pre-trained offset voltage parameter group;
the second judgment module is used for judging whether the error correction is successful;
a second data block determining module, configured to determine, when error correction is successful, a data set obtained by error correction as the target data block;
the parameter set retrieving module is specifically a module for retrieving a pre-trained offset voltage parameter set when error correction fails.
7. The data error correction apparatus of claim 5, further comprising:
and the error reporting module is used for performing error reporting operation when the traversal of the offset voltage parameter group is completed and the reading fails.
8. The data error correction device of any one of claims 5 to 7, wherein the parameter set retrieving module comprises:
the service life information acquisition submodule is used for acquiring the current service life information of the solid state disk;
the service life range determining submodule is used for determining a target preset service life range corresponding to the current service life information;
the parameter set calling submodule is used for calling an offset voltage parameter set corresponding to the target preset life range from an offset voltage parameter set obtained by pre-training; and the offset voltage parameter group set stores the corresponding relation between each preset life range and each offset voltage parameter group.
9. A data error correction apparatus, characterized by comprising:
a memory for storing a computer program;
a processor for implementing the steps of the data error correction method according to any one of claims 1 to 4 when executing the computer program.
10. A computer-readable storage medium, characterized in that a computer program is stored on the computer-readable storage medium, which computer program, when being executed by a processor, carries out the steps of the data error correction method according to any one of claims 1 to 4.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114047887A (en) * | 2022-01-13 | 2022-02-15 | 苏州浪潮智能科技有限公司 | Method, device and medium for improving success rate of data reading |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109189337A (en) * | 2018-08-21 | 2019-01-11 | 浪潮电子信息产业股份有限公司 | A kind of method, apparatus, equipment and readable storage medium storing program for executing selecting data block |
| CN109992446A (en) * | 2019-04-12 | 2019-07-09 | 苏州浪潮智能科技有限公司 | A kind of solid state hard disk error correction method and relevant apparatus |
| CN111880736A (en) * | 2020-07-28 | 2020-11-03 | 苏州浪潮智能科技有限公司 | Solid state disk access method, device, equipment and medium |
| CN112466378A (en) * | 2020-11-12 | 2021-03-09 | 苏州浪潮智能科技有限公司 | Solid state disk operation error correction method and device and related components |
-
2021
- 2021-06-28 CN CN202110720420.7A patent/CN113625947B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109189337A (en) * | 2018-08-21 | 2019-01-11 | 浪潮电子信息产业股份有限公司 | A kind of method, apparatus, equipment and readable storage medium storing program for executing selecting data block |
| CN109992446A (en) * | 2019-04-12 | 2019-07-09 | 苏州浪潮智能科技有限公司 | A kind of solid state hard disk error correction method and relevant apparatus |
| CN111880736A (en) * | 2020-07-28 | 2020-11-03 | 苏州浪潮智能科技有限公司 | Solid state disk access method, device, equipment and medium |
| CN112466378A (en) * | 2020-11-12 | 2021-03-09 | 苏州浪潮智能科技有限公司 | Solid state disk operation error correction method and device and related components |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114047887A (en) * | 2022-01-13 | 2022-02-15 | 苏州浪潮智能科技有限公司 | Method, device and medium for improving success rate of data reading |
| WO2023134132A1 (en) * | 2022-01-13 | 2023-07-20 | 苏州浪潮智能科技有限公司 | Method and device for improving data read success rate, and medium |
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