CN113621943A - 成膜装置以及板 - Google Patents

成膜装置以及板 Download PDF

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CN113621943A
CN113621943A CN202110467079.9A CN202110467079A CN113621943A CN 113621943 A CN113621943 A CN 113621943A CN 202110467079 A CN202110467079 A CN 202110467079A CN 113621943 A CN113621943 A CN 113621943A
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plate
opening
film forming
gas
gas supply
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CN113621943B (zh
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醍醐佳明
梅津拓人
石黑晓夫
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Nuflare Technology Inc
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Nuflare Technology Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
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    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45565—Shower nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
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    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
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    • C23C16/45568—Porous nozzles
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    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
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    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45572—Cooled nozzles
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides

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  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Control And Other Processes For Unpacking Of Materials (AREA)
  • Supplying Of Containers To The Packaging Station (AREA)
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Abstract

本实施方式提供成膜装置以及板，能够在径向上控制向基板面内供给的工艺气体的浓度、流量。本实施方式的成膜装置具备：成膜室，能够收容基板；气体供给部，具有设置在成膜室的上部并向基板的成膜面上供给工艺气体的多个喷嘴、以及抑制工艺气体的温度上升的冷却部；加热器，将基板加热到1500℃以上；以及板，在成膜室内与形成有多个喷嘴的第1开口部的气体供给部的下表面对置，且与该下表面分离地配置，板包括：多个第2开口部，具有比第1开口部小的直径，且在该板面内大致均匀地配置；以及分隔部，在与气体供给部对置的对置面上突出，将板的面内分隔为多个区域。

Description

成膜装置以及板
技术领域
本实施方式涉及成膜装置以及板。
背景技术
在SiC膜等的外延生长法中使用的成膜装置，需要以1500℃～1700℃这样的高温来加热基板。因此，例如，设置在成膜腔室的上部的气体供给部，也由于来自用于加热基板的加热器等的辐射而暴露在高温下。但是，当在气体供给部附近原料气体、掺杂气体进行对流而被加热时，包含原料以及掺杂物的堆积物会附着在气体供给部的表面上。如此附着于气体供给部的堆积物成为颗粒而落下到基板上，成为器件不良的原因。此外，由于从附着于气体供给部的堆积物释放出掺杂物气体，因此还存在SiC膜的掺杂浓度随时间经过而变化这样的问题(记忆效应)。
发明内容
本实施方式提供成膜装置以及板，能够在径向上控制向基板面内供给的工艺气体的浓度、流量。
本实施方式的成膜装置具备：成膜室，能够收容基板；气体供给部，具有设置在成膜室的上部并向基板的成膜面上供给工艺气体的多个喷嘴、以及抑制工艺气体的温度上升的冷却部；加热器，将基板加热到1500℃以上；以及板，在成膜室内与形成有多个喷嘴的第1开口部的气体供给部的下表面对置，并与该下表面分离配置，板包括：多个第2开口部，具有比第1开口部小的直径，且在该板面内大致均匀地配置；以及分隔部，在与气体供给部对置的对置面上突出，将板的面内分隔为多个区域。
本实施方式的板为，与向成膜室内的基板的成膜面上供给气体的气体供给部对置，并与该气体供给部分离配置，其具备：多个第2开口部，具有比设置于气体供给部且供给气体的喷嘴的第1开口部小的直径，在该板面内大致均匀地配置；以及分隔部，在与气体供给部对置的对置面上突出。
附图说明
图1是表示第1实施方式的成膜装置的构成例的截面图。
图2是表示腔室的头部的构成例的截面图。
图3是表示板以及第1开口部的配置关系的图。
图4是沿着图3的4-4线的截面图。
图5是板120的侧视图。
图6是表示在喷嘴上安装有测温孔的气体供给部的构成例的截面图。
图7是表示气体供给部与板之间的间隙的放大图。
图8A是表示基板面内的膜的掺杂浓度的偏差的曲线图。
图8B是表示基板面内的膜的掺杂浓度的偏差的曲线图。
图9A是表示基板面内的膜厚的偏差的曲线图。
图9B是表示基板面内的膜厚的偏差的曲线图。
图10是表示第2实施方式的板以及第1开口部的配置关系的图。
图11是表示第3实施方式的板的构成例的图。
图12是沿着图11的12-12线的截面图。
图13是表示分隔部的构成例的立体图。
图14是表示工具的构成例的立体图。
图15是表示工具的构成例的立体图。
图16是表示第3实施方式的变形例的板的构成例的图。
符号的说明
1：成膜装置；10：腔室；20：衬套；31、35：冷却部；40：气体供给部；50：排气部；60：支持器；70：支承部；80：旋转机构；90：下部加热器；95：上部加热器；100：反射器；110：衬套；120：板；N：喷嘴；OP1：第1开口部；OP2：第2开口部；OP3：第3开口部；OP4：第4开口部；121a～121c：分隔部；R1～R3：第1～第3板区域；W：基板。
具体实施方式
以下，参照附图对本发明的实施方式进行说明。本实施方式并不限定本发明。附图为示意性或概念性，各部分的比例等不一定与现实情况相同。在说明书和附图中，对于与针对已经出现的附图叙述过的要素相同的要素，标注相同的标号并适当省略详细说明。
(第1实施方式)
图1是表示第1实施方式的成膜装置1的构成例的截面图。成膜装置1具备腔室10、衬套20、冷却部31、35、气体供给部40、排气部50、支持器60、支承部70、旋转机构80、下部加热器90、上部加热器95、反射器100、衬套110、板120以及隔热材96。
作为成膜室的腔室10能够收容基板W，例如为不锈钢制。腔室10的内部由未图示的真空泵减压。腔室10具有头部12以及主体部13。在头部12设置有气体供给部40以及冷却部31。从气体供给部40供给的包含原料气体、运载气体、辅助气体、掺杂气体的工艺气体，在腔室10的头部12的内部由冷却部31来抑制温度上升。因而，以下，将腔室10的头部12的内部称作温度上升抑制区域Rc。另外，辅助气体是起到对原料气体的过度反应进行抑制等的作用的气体。例如，在SiC膜的形成中，在作为原料气体而使用了Si系气体的情况下，通过作为辅助气体而添加HCl，由此具有对气相中的Si的簇化进行抑制等的效果。
在主体部13的腔室10的内部设置有支持器60、旋转机构80、下部加热器90以及上部加热器95等。从气体供给部40供给的气体，在主体部13的内部中被加热，并在基板W的表面发生反应。由此，在基板W上外延生长出膜。膜例如是SiC膜等。
腔室10的头部12所具备的衬套110的内径与主体部13所具备的衬套20的内径相同或者比其小。衬套110是对腔室10的头部12的内壁进行覆盖而抑制在头部12的内壁上生成堆积物的中空圆筒的部件。作为衬套110的材料，使用红外线的透射率较高的材料、例如石英。由此，能够抑制由于经由了衬套20、支持器60、基板W的来自上部加热器95和下部加热器90的辐射而衬套110被加热为高温。此外，衬套110被配置成，即使热变形也不会与主体部13的内壁摩擦。因此，除了支承衬套110的设置于头部12的内壁侧的未图示的支承部(图2的支承部140)以外，衬套110的外壁面与主体部13的内壁面分离配置。
衬套20是对腔室10的内壁进行覆盖而抑制在上部加热器95、隔热材96、主体部13的内壁上生成堆积物的中空筒状的部件。衬套20通过来自上部加热器95的辐射而被加热为高温，并作为用于通过辐射对基板W进行加热的热壁起作用。作为衬套20的材料，选择耐热性较高的材料，例如使用碳、涂覆了SiC的碳等。
冷却部31设置于腔室10的头部12，例如成为制冷剂(例如水)的流路。通过制冷剂在流路中流动，由此冷却部31抑制温度上升抑制区域Rc内的气体温度上升。此外，如后述的图2所示，在气体供给部40的各喷嘴N周围也设置有冷却部32。由此，能够抑制向温度上升抑制区域Rc供给的气体温度上升。与此同时，冷却部31使腔室10的头部12不会被来自上部加热器95、下部加热器90的辐射加热。
冷却部35设置于腔室10的主体部13，与冷却部31同样，例如成为制冷剂(例如水)的流路。但是，冷却部35不是为了对主体部13内的空间进行冷却而设置的，而是设置为防止来自上部加热器95、下部加热器90的热对腔室10的主体部13进行加热。
气体供给部40设置于与基板W的表面对置的腔室10的上表面，具有多个喷嘴。气体供给部40设置在比下部加热器90以及上部加热器95靠上方的位置，且设置在温度上升抑制区域Rc的上部。气体供给部40经由喷嘴将原料气体(Si系气体、C系气体等)、掺杂气体(氮气、含铝气体等)、辅助气体(HCl气体等)以及运载气体(氢气、氩气等)向腔室10内部的温度上升抑制区域Rc供给。
排气部50设置在腔室10的底部，将在成膜处理中使用后的气体向腔室10外部排出。
支持器60是能够载放基板W的圆环状的部件，例如为碳制。支承部70是能够支承支持器60的圆筒形的部件，例如与支持器60同样为碳制。支承部70与旋转机构80连接，并构成为能够通过旋转机构80而旋转。支承部70能够使基板W与支持器60一起旋转。支持器60以及支承部70除了碳以外，例如也可以由SiC(碳化硅)、TaC(碳化钽)、W(钨)、Mo(钼)等具有1500℃以上的耐热性的材料形成。此外，支持器60以及支承部70也能够使用对碳涂覆了SiC、TaC等的材料。
下部加热器90设置在支持器60以及基板W的下方且是在支承部70的内部。下部加热器90经由支持器60而从基板W的下方对基板W进行加热。上部加热器95沿着设置在腔室10的主体部13的内周的隔热材96的侧面设置，并经由衬套20而从基板W的上方对基板W进行加热。在旋转机构80使基板W例如以300rpm以上的转速旋转的同时，下部加热器90以及上部加热器95将该基板W加热到1500℃以上的高温。由此，能够均匀地加热基板W。
反射器100设置在腔室10的头部12与主体部13之间，例如为碳制。反射器100将来自下部加热器90、上部加热器95的热朝下方反射。由此，头部12的温度不会由于来自下部加热器90、上部加热器95的辐射而过度地上升。反射器100以及冷却部31以使温度上升抑制区域Rc的温度低于原料气体的反应温度的方式发挥功能。反射器100除了碳以外，例如也可以由SiC(碳化硅)、TaC(碳化钽)、W(钨)、Mo(钼)等具有1500℃以上的耐热性的材料形成。反射器100可以是一张薄板，但为了高效地反射热而优选成为使多张薄板以适当的间隔分离的构造。
参照图2对衬套110以及板120的构成进行说明。
图2是表示腔室10的头部12的构成例的截面图。在气体供给部40中设置有多个喷嘴N。喷嘴N被设置为，朝向载放在腔室10内的支持器60上的基板W的表面喷出原料气体、掺杂气体、辅助气体以及运载气体。气体供给部40沿着大致垂直方向(即，大致铅垂方向)D1对基板W的表面喷出原料气体、掺杂气体、辅助气体、运载气体等气体。喷嘴N将原料气体、掺杂气体、辅助气体、运载气体等气体从与喷嘴N连接的未图示的气体配管向温度上升抑制区域Rc导入。喷嘴N的第1开口部OP1处于腔室10的内侧，是喷出气体的喷嘴N的开口。在气体供给部40中，在喷嘴N的周围设置有冷却部32，抑制气体供给部40以及头部12的温度过度地上升。
衬套110是覆盖腔室10内的头部12的内壁而抑制在头部12的内壁上生成堆积物的中空圆筒的部件。衬套110由设置在头部12的内壁侧的支承部140支承。作为衬套110的材料，使用红外线的透射率较高的材料、例如石英。如此，能够抑制由于经由了衬套20、支持器60、基板W等的来自上部加热器95以及下部加热器90的辐射而衬套110被加热到高温。此外，衬套110被配置为，即使发生热变形也不会与头部12的内壁接触。因此，除了支承部140以外，衬套110的外壁面与头部12的内壁面分离地配置。
板120设置在气体供给部40的下部，且沿着衬套110的内缘设置。板120具有大致圆形的平面形状，由石英等红外线的透射率较高的材料构成。如此，能够抑制板120被加热到高温。通过板120的支承部121d，板120被局部地载放在衬套110上。此外，除了支承部121d与衬套110之间的接触部以外，在板120与衬套110之间设置有间隙GP2。间隙GP2能够使来自后述的开口部OP10的清扫气体沿着衬套110的内周侧面流动。如此，能够使从后述的第2开口部OP2向温度上升抑制区域Rc导入的原料气体难以到达衬套110，能够抑制在衬套110表面上生成反应副产物。
板120在腔室10内设置在与气体供给部40的多个喷嘴N的第1开口部OP1对置的位置，且与气体供给部40的下表面分离地配置。板120被设置为覆盖具有第1开口部OP1的气体供给部40的下表面。另一方面，在气体供给部40与板120之间存在间隙GP，板120不与气体供给部40直接接触。由此，即使板120由于温度上升而发生热变形，也能够抑制板120与气体供给部40的下表面产生干涉。
板120具有大致均匀地配置在板面内的多个第2开口部OP2。第2开口部OP2具有比第1开口部OP1小的直径。因而，来自第1开口部OP1的气体暂时滞留在间隙GP中，之后经由第2开口部OP2向温度上升抑制区域Rc大致均匀地导入。如此，板120通过第2开口部OP2而具有气体的整流效果。
此外，板120包括在与气体供给部40对置的对置面F120上突出的分隔部121a、121b、121c。如后所述，多个分隔部121a、121b、121c在板120的对置面F120内以同心圆状设置成大致圆形。
设置于气体供给部40的开口部OP10是为了供给清扫气体而设置的孔。如上所述，从开口部OP10供给的清扫气体经由板120与衬套110之间的间隙GP2而沿着衬套110的内周侧面流动。如此，能够使从第2开口部OP2向温度上升抑制区域Rc导入的原料气体难以到达衬套110，能够抑制在衬套110的表面上生成反应副产物。
图3是表示板120以及第1开口部OP1的配置关系的图。图4是沿着图3的4-4线的截面图。图5是板120的侧视图。参照图3～图5对板120的构成以及第1开口部OP1的配置进行说明。
板120在对置面F120上具有多个分隔部121a、121b、121c。由分隔部121a、121b、121c中处于最内周侧的第1分隔部121a包围的中心区域为第1板区域R1。处于第1分隔部121a的外周侧的第2分隔部121b与第1分隔部121a之间的中间区域为第2板区域R2。处于第2分隔部121b的外周侧的第3分隔部121c与第2分隔部121b之间的外侧区域为第3板区域R3。
第2开口部OP2大致均匀地配置在板面内，将供给到各个区域R1～R3的气体大致均匀地导入腔室10内。将与第1板区域R1对置的第1开口部OP1设为OP1_1，与第2板区域R2对置的第1开口部OP1设为OP1_2，与第3板区域R3对置的第1开口部OP1设为OP1_3。开口部OP1_1～OP1_3向由分隔部121a～121c分隔出的区域R1～R3分别供给气体。开口部OP1_1～OP1_3的喷嘴N将浓度互不相同的气体或者种类(组成)互不相同的气体向气体供给部40与板120之间的间隙GP供给。因此，在间隙GP中，由于分隔部121a～121c，供给到区域R1～R3中的气体相互几乎不混合地经由第2开口部OP2向腔室10内导入。
气体供给部40从喷嘴N供给原料气体(例如，硅烷气体、丙烷气体等)、掺杂气体(例如，氮气、TMA(Trimethylaluminium：三甲基铝)气体、乙硼烷等)、辅助气体(HCl气体等)、运载气体(例如，氢气、氩气等)。
气体供给部40能够在区域R1～R3中变更原料气体、掺杂气体、辅助气体、运载气体的比例或者浓度。例如，气体供给部40能够在区域R1～R3中变更原料气体的硅烷的硅量与丙烷气体的碳量之比(C/Si比)。此外，气体供给部40能够在区域R1～R3中变更运载气体的氢气的流量。由此，能够将基板W的面内的SiC膜的膜厚、掺杂浓度调整为大致均匀。
如此，气体供给部40能够向区域R1～R3分别供给不同浓度比的气体。由于板120具有分隔部121a～121c，因此能够抑制供给到区域R1～R3的间隙GP中的气体混合，而从第2开口部OP2分别大致均匀地导入腔室10内。
此外，本实施方式的板120与气体供给部40的第1开口部OP1_1～OP1_3对置地具有第2开口部OP2，但不具有比第2开口部OP2大的开口部。因而，从第1开口部OP1_1～OP1_3供给的气体不直接导入到腔室10内，而是在区域R1～R3各自的间隙GP中暂时滞留之后，经由第2开口部OP2导入到腔室10内。由此，板120能够从区域R1～R3分别将气体大致均匀地导入腔室10内。
如图3所示，气体供给部40具有第3开口部OP3。第3开口部OP3是用于通过辐射温度计(未图示)测定腔室10的内部温度的测温光路。辐射温度计经由安装有测温孔的喷嘴而测定基板W的表面温度。例如，图6是表示在喷嘴N上安装有测温孔130的气体供给部40的构成例的截面图。经由配管PL1安装于喷嘴N的第3开口部OP3。辐射温度计经由配管PL1测定腔室10内的基板W的表面温度。配管PL1除了与测温孔130轮胎以外还与配管PL2连通，能够如箭头A所示那样使气体(例如，氢气、氩气等)流动。在图3所示的例子中，测温孔设置在区域R1～R3各自的第3开口部OP3。
图7是表示气体供给部40与板120之间的间隙GP的放大图。将气体供给部40的下表面(气体供给面)F40与板120的上表面(对置面)F120之间的第1距离设为d1，下表面F40与分隔部121a～121c之间的第2距离设为d2。第2距离d2小于第1距离d1。
例如，优选第1距离d1大约为1.0mm～8.0mm，第2距离d2大约为0.5mm～2mm。在第1距离d1小于1.0mm的情况下，变得难以得到分隔部121a～121c对气体的分离效果。此外，在第1距离d1大于8.0mm的情况下，从板120向气体供给部40的散热效果被抑制。此外，在第2距离d2小于0.5mm的情况下，板120由于温度上升而变形，由此分隔部121a～121c的一部分有可能与气体供给部40产生干涉。另一方面，当第2距离d2大于2.0mm时，分隔部121a～121c变得无法在区域R1～R3中分离气体。此外，优选d1与d2的比例(d2/d1)为0.5以下。其原因在于，当d2/d1为0.5以上时，难以得到气体的分离效果。
板120的第2开口部OP2的直径例如为0.5mm以上5mm以下。此外，设置于板120的第2开口部OP2的总面积相对于板120的面F120或者其相反侧的面的面积为5％以上25％以下。在第2开口部OP2小于0.5mm的情况下，从板120向腔室10内部的气体流动恶化，因此气体容易滞留于间隙GP。因此，变得难以得到由分隔部121a～121c分隔出的区域R1～R3中的气体分离效果。在第2开口部OP2大于5mm的情况下，板120根据第1开口部OP1的位置而使气体不均匀地通过，因此变得难以得到气体的整流效果。此外，在第2开口部OP2的总面积相对于板120的面F120或者其相反侧的面的面积小于5％的情况下，气体的流动恶化，因此气体容易滞留于间隙GP。因此，变得难以得到区域R1～R3的气体分离效果。另一方面，在第2开口部OP2的总面积相对于板120的面F120或者其相反侧的面的面积大于25％的情况下，板120根据第1开口部OP1的位置而使气体不均匀地通过，因此变得难以得到板120的整流效果。此外，第2开口部OP2变得容易因热而变形。
通过采用这样的构成，本实施方式的成膜装置1能够通过分隔部121a～121c来抑制间隙GP中的气体混合，并且能够使区域R1～R3的气体浓度、流量变动。其结果，能够提高在基板W上形成的膜的膜质(膜厚、掺杂浓度、混合晶体组成比、结晶性等)的均匀性。
图8A以及图8B是表示基板W面内的膜中掺杂浓度分布的曲线图。图8A以及图8B表示在区域R1～R3中变更了原料气体的硅烷的硅量与丙烷气体的碳量之比(C/Si比)的情况下的掺杂浓度的偏差。纵轴表示成膜出的膜(例如，SiC膜)的掺杂浓度(以平均值标准化后的掺杂浓度)。横轴是将基板W的中心设为0而离该中心0的距离。
在图8A中，气体供给部40使气体的C/Si比在第1板区域R1中为5.7，在第2板区域R2中为1.3，在第3板区域R3中为1.0，从基板W的中心向端部逐渐降低。由此，基板W面内的膜中掺杂浓度分布在基板W的中心比较低，而在端部变得比较高。即，掺杂浓度在基板W的面内成为大致U字型。
与此相对，在图8B中，气体供给部40使气体的C/Si比在第1板区域R1中为1.9，在第2板区域R2中为0.18，在第3板区域R3中为4.3，从中心部朝向端部在一度降低之后上升。由此可知，膜中掺杂浓度分布与图8A所示的膜中掺杂浓度分布相比变得平坦，掺杂浓度的面内均匀性提高。
如此，本实施方式的成膜装置1通过对从气体供给部40的中心朝外周方向的气体的C/Si比进行调节，由此能够对在基板W上成膜的膜的掺杂浓度的分布形状进行控制。即，能够使在基板W上成膜的膜的掺杂浓度的面内均匀性提高。
图9A以及图9B是表示在区域R1～R3中变更了运载气体的氢气流量的情况下的膜厚的偏差的曲线图。在图9A以及图9B中，纵轴表示成膜出的膜(例如，SiC膜)的膜厚(以平均值标准化后的膜厚)。横轴是将基板W的中心设为0而离该中心0的距离。
在图9A中，气体供给部40使氢气流量在第1板区域R1中为20L，在第2板区域R2中为62L，在第3板区域R3中为70L，从基板W的中心朝端部平缓地增加。由此，膜厚在基板W的中心比较薄，而在端部变厚。即，掺杂浓度在基板W的面内成为大致M字型。
与此相对，在图9B中，气体供给部40使氢气流量在第1板区域R1中为13.5L，在第2板区域R2中为34.5L，在第3板区域R3中为104L，从基板W的中心朝端部急剧地增加。由此，膜厚虽然在最端部变薄，但从基板W的中心到端部大致均匀化。
如此，本实施方式的成膜装置1通过对氢气流量进行调节，由此能够对在基板W上成膜的膜的膜厚的分布形状进行控制。即，能够使在基板W上成膜的膜的膜厚的面内均匀性提高。
(第2实施方式)
图10是表示第2实施方式的板120以及第1开口部OP1的配置关系的图。在第2实施方式中，板120在与参照图6说明过的第3开口部(测温光路)OP3对应的位置处具有第4开口部OP4。第4开口部OP4的直径优选与第3开口部OP3的直径相同或者比其大。第4开口部OP4能够使来自第3开口部OP3的氢气不朝板120与气体供给部40之间的间隙GP供给而朝腔室10流动。此外，第3开口部OP3未被板120遮挡。因此，辐射温度计能够经由第3开口部OP3准确地测定基板W的温度。
此外，板120在第4开口部OP4的周围整体具有分隔部121e。分隔部121e与分隔部121a～121c中的某一个连续，且分别独立地包围各个第4开口部OP4。因而，能够抑制来自第3开口部OP3的氢气进入板120与气体供给部40之间的间隙GP。由此，成膜装置1能够容易地控制区域R1～R3各自中的氢气流量。
(第3实施方式)
图11是表示第3实施方式的板120的构成例的图。图12是沿着图11的12-12线的截面图。根据第3实施方式，分隔部121a、121b由能够拆装的多个工具(例如，图13的150a、150b等)构成。在从向板120供给气体的供给方向观察的平面布局中，分隔部121a、121b可以为大致方形、大致圆形、大致椭圆形、大致多边形中的任一种。分隔部121a、121b通过组合多个工具150a、150b等，能够在板120上构成为任意的平面形状。如此，在第3实施方式中，分隔部121a、121b与板120分体地设置，通过多个工具150a、150b等的组合，能够任意地分隔板区域R1～R3。构成分隔部121a、121b的多个工具150a、150b等，可以使用与板120相同的材料(例如，石英)。此外，分隔部121a、121b也可以分别一体形成。另一方面，如图12所示，分隔部121a、121b也可以分为下部与上部。在该情况下，分隔部121a、121b分别通过将下部与上部进行连接来构成。
图13是表示分隔部121a的构成例的立体图。图14是表示工具150a的构成例的立体图。图15是表示工具150b的构成例的立体图。分隔部121a由具有互不相同的形状的多个工具150a、150b构成。分隔部121a通过将4个工具150a与4个工具150b组合，而具有4个角为圆角的大致四边形的形状。
如图14所示，工具150a是将棱柱部件弯曲而形成的，且具有突起部151a。突起部151a具有与开口部OP2大致相似的平面形状以便与图12所示的开口部OP2嵌合，该平面形状成型得比开口部OP2小若干。工具150a的水平延伸方向的长度以及垂直延伸方向的长度能够任意地设定。此外，在图14中，工具150a为了形成4个角为圆角的大致四边形而弯曲90度，但为了形成任意的形状，角也可以以任意的角度弯曲而形成。
如图15所示，工具150b由棱柱部件形成，且具有突起部151b。与突起部151a同样，突起部151b具有与开口部OP2大致相似的平面形状以便与开口部OP2嵌合，该平面形状成型得比开口部OP2小若干。工具150b的水平延伸方向的长度以及垂直延伸方向的长度能够任意地设定。
通过将工具150a、150b的突起部151a、151b嵌入开口部OP2，由此工具150a、150b被固定在板120的表面上，而构成分隔部121a。
如上述分隔部121a、121b的说明那样，工具150a、150b也可以分别一体形成。另一方面，工具150a也可以分为包括突起部151a的下部和其上的上部。此外，工具150b也可以分为包括突起部151b的下部和其上的上部。在该情况下，工具150a、150b分别通过将下部与上部进行连接而构成。
另外，在此处，对分隔部121a的构成进行说明。分隔部121a通过将工具150a、150b或者形状或大小与工具150a、150b不同的其他工具进行组合，由此能够改变从向板120供给气体的供给方向观察到的平面布局中的形状。此外，分隔部121b通过将工具150a、150b或者形状或大小与工具150a、150b不同的其他工具进行组合，由此能够任意地构成从向板120供给气体的供给方向观察到的平面布局中的形状。
第3实施方式的其他构成可以与第1实施方式的对应构成相同。因而，如图11以及图12所示，分隔部121a、121b从板120的表面突出，将板120分隔为板区域R1～R3。此外，通过改变工具150a、150b的大小，能够对图7所示那样的下表面F40与分隔部121a、121b之间的第2距离d2进行调整。由此，第3实施方式能够得到与第1实施方式相同的效果。
(变形例)
图16是表示第3实施方式的变形例的板120的构成例的图。根据本变形例，在从向板120供给气体的供给方向观察到的平面布局中，分隔部121a、121b的平面形状与图11不同。本变形例的其他构成可以与第3实施方式的构成相同。如此，分隔部121a、121b的平面形状能够根据工具的形状以及组合来任意地变更。此外，分隔部的数量也可以为3个以上。通过增多分隔部的数量，能够更细致地划分板区域。本变形例能够得到与第3实施方式相同的效果。
对本发明的几个实施方式进行了说明，这些实施方式是作为例子而提示的，并不意图对发明的范围进行限定。这些实施方式能够以其他各种方式加以实施，在不脱离发明的主旨的范围内能够进行各种省略、置换、变更。这些实施方式及其变形包含于发明的范围及主旨中，并且包含于专利请求范围所记载的发明和与其等同的范围中。

Claims (17)

1.一种成膜装置，具备：
成膜室，能够收容基板；
气体供给部，具有：多个喷嘴，设置在上述成膜室的上部，向上述基板的成膜面上供给工艺气体；以及冷却部，抑制上述工艺气体的温度上升；
加热器，将上述基板加热到1500℃以上；以及
板，在上述成膜室内与形成有上述多个喷嘴的第1开口部的上述气体供给部的下表面对置，且与该下表面分离地配置，
上述板包括：
多个第2开口部，具有比上述第1开口部小的直径，在该板面内大致均匀地配置；以及
分隔部，在与上述气体供给部对置的对置面上突出，将上述板的面内分隔为多个区域。
2.根据权利要求1所述的成膜装置，其中，
上述板具有由上述分隔部包围的第1板区域以及处于上述分隔部的外周侧的第2板区域，
从上述气体供给部向上述第1板区域和上述第2板区域以互不相同的浓度或者互不相同的流量供给工艺气体。
3.根据权利要求1所述的成膜装置，其中，
多个上述分隔部在上述对置面上设置成同心圆状。
4.根据权利要求1所述的成膜装置，其中，
上述气体供给部具有用于测定上述成膜室的内部温度的第3开口部，
上述板在与上述第3开口部对置的位置上具有与上述第3开口部相同或者比其大的第4开口部，上述分隔部还设置在上述第4开口部的周围。
5.根据权利要求4所述的成膜装置，其中，
上述分隔部设置在上述第4开口部的周围。
6.根据权利要求1所述的成膜装置，其中，
在上述喷嘴所对置的上述板的对置位置上也设置有上述第2开口部。
7.根据权利要求1所述的成膜装置，其中，
上述气体供给部与上述板之间的间隙为1.0mm～8.0mm，
上述气体供给部与上述分隔部之间的间隙为0.5mm～2mm。
8.根据权利要求1所述的成膜装置，其中，
上述第2开口部的直径为0.5mm～5mm。
9.根据权利要求1所述的成膜装置，其中，
上述分隔部能够拆装地安装于上述板。
10.根据权利要求9所述的成膜装置，其中，
上述分隔部具有嵌入上述第2开口部的突起部。
11.一种板，与向成膜室内的基板的成膜面上供给气体的气体供给部对置，且与该气体供给部分离地配置，其具备：
多个第2开口部，具有比设置于上述气体供给部且供给上述气体的喷嘴的第1开口部小的直径，且在该板面内大致均匀地配置；以及
分隔部，在与上述气体供给部对置的对置面中突出。
12.根据权利要求11所述的板，其中，
具有由上述分隔部包围的第1板区域以及处于上述分隔部的外周侧的第2板区域。
13.根据权利要求11所述的板，其中，
多个上述分隔部在上述对置面上设置成同心圆状。
14.根据权利要求11所述的板，其中，
上述气体供给部具有用于测定上述成膜室的内部温度的第3开口部，
在与上述第3开口部对置的位置上具有与上述第3开口部相同或者比其大的第4开口部，上述分隔部还设置在上述第4开口部的周围。
15.根据权利要求11所述的板，其中，
在上述喷嘴所对置的上述板的对置位置上也设置有上述第2开口部。
16.根据权利要求11所述的板，其中，
上述分隔部能够拆装地安装于该板。
17.根据权利要求16所述的板，其中，
上述分隔部分别具有嵌入上述第2开口部的突起部。
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