CN113611778A - Method for replacing traditional photovoltaic low-temperature silver paste with metal compound and application of metal compound - Google Patents
Method for replacing traditional photovoltaic low-temperature silver paste with metal compound and application of metal compound Download PDFInfo
- Publication number
- CN113611778A CN113611778A CN202110950879.6A CN202110950879A CN113611778A CN 113611778 A CN113611778 A CN 113611778A CN 202110950879 A CN202110950879 A CN 202110950879A CN 113611778 A CN113611778 A CN 113611778A
- Authority
- CN
- China
- Prior art keywords
- silver paste
- silver
- copper wire
- electrode
- replacing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 title claims abstract description 92
- 229910052709 silver Inorganic materials 0.000 title claims abstract description 91
- 239000004332 silver Substances 0.000 title claims abstract description 91
- 238000000034 method Methods 0.000 title claims abstract description 25
- 150000002736 metal compounds Chemical class 0.000 title claims abstract description 12
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 59
- 239000002905 metal composite material Substances 0.000 claims abstract description 16
- 239000011241 protective layer Substances 0.000 claims abstract description 12
- 239000002002 slurry Substances 0.000 claims abstract description 7
- 239000002243 precursor Substances 0.000 claims abstract description 5
- 238000007598 dipping method Methods 0.000 claims abstract description 4
- 239000000084 colloidal system Substances 0.000 claims abstract description 3
- 239000002131 composite material Substances 0.000 claims abstract description 3
- 150000001875 compounds Chemical class 0.000 claims abstract description 3
- 239000010410 layer Substances 0.000 claims description 22
- 239000010409 thin film Substances 0.000 claims description 21
- 229910021417 amorphous silicon Inorganic materials 0.000 claims description 20
- 239000010408 film Substances 0.000 claims description 13
- 229910052802 copper Inorganic materials 0.000 claims description 9
- 239000010949 copper Substances 0.000 claims description 9
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 5
- 239000004094 surface-active agent Substances 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 239000003795 chemical substances by application Substances 0.000 claims description 3
- 239000008139 complexing agent Substances 0.000 claims description 3
- GGCZERPQGJTIQP-UHFFFAOYSA-N sodium;9,10-dioxoanthracene-2-sulfonic acid Chemical compound [Na+].C1=CC=C2C(=O)C3=CC(S(=O)(=O)O)=CC=C3C(=O)C2=C1 GGCZERPQGJTIQP-UHFFFAOYSA-N 0.000 claims description 3
- 239000002904 solvent Substances 0.000 claims description 3
- 238000007654 immersion Methods 0.000 claims 1
- 238000002360 preparation method Methods 0.000 abstract description 4
- 230000000052 comparative effect Effects 0.000 description 10
- 238000006243 chemical reaction Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 4
- 238000007639 printing Methods 0.000 description 4
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 3
- DNIAPMSPPWPWGF-UHFFFAOYSA-N Propylene glycol Chemical compound CC(O)CO DNIAPMSPPWPWGF-UHFFFAOYSA-N 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 238000007711 solidification Methods 0.000 description 3
- 230000008023 solidification Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- SQGYOTSLMSWVJD-UHFFFAOYSA-N silver(1+) nitrate Chemical compound [Ag+].[O-]N(=O)=O SQGYOTSLMSWVJD-UHFFFAOYSA-N 0.000 description 2
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- 239000004925 Acrylic resin Substances 0.000 description 1
- 101001073212 Arabidopsis thaliana Peroxidase 33 Proteins 0.000 description 1
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 1
- 239000001856 Ethyl cellulose Substances 0.000 description 1
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 1
- PIICEJLVQHRZGT-UHFFFAOYSA-N Ethylenediamine Chemical compound NCCN PIICEJLVQHRZGT-UHFFFAOYSA-N 0.000 description 1
- 101001123325 Homo sapiens Peroxisome proliferator-activated receptor gamma coactivator 1-beta Proteins 0.000 description 1
- 102100028961 Peroxisome proliferator-activated receptor gamma coactivator 1-beta Human genes 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005265 energy consumption Methods 0.000 description 1
- 239000003822 epoxy resin Substances 0.000 description 1
- 229920001249 ethyl cellulose Polymers 0.000 description 1
- 235000019325 ethyl cellulose Nutrition 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 125000001153 fluoro group Chemical group F* 0.000 description 1
- 230000005484 gravity Effects 0.000 description 1
- 238000005470 impregnation Methods 0.000 description 1
- 239000012948 isocyanate Substances 0.000 description 1
- 150000002513 isocyanates Chemical class 0.000 description 1
- 229940049920 malate Drugs 0.000 description 1
- BJEPYKJPYRNKOW-UHFFFAOYSA-N malic acid Chemical compound OC(=O)C(O)CC(O)=O BJEPYKJPYRNKOW-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000011056 performance test Methods 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
- 229920001225 polyester resin Polymers 0.000 description 1
- 239000004645 polyester resin Substances 0.000 description 1
- 229920005749 polyurethane resin Polymers 0.000 description 1
- 239000001267 polyvinylpyrrolidone Substances 0.000 description 1
- 229920000036 polyvinylpyrrolidone Polymers 0.000 description 1
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 description 1
- AOHJOMMDDJHIJH-UHFFFAOYSA-N propylenediamine Chemical compound CC(N)CN AOHJOMMDDJHIJH-UHFFFAOYSA-N 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 229940009188 silver Drugs 0.000 description 1
- CQLFBEKRDQMJLZ-UHFFFAOYSA-M silver acetate Chemical compound [Ag+].CC([O-])=O CQLFBEKRDQMJLZ-UHFFFAOYSA-M 0.000 description 1
- 229940071536 silver acetate Drugs 0.000 description 1
- 229940071575 silver citrate Drugs 0.000 description 1
- -1 silver fatty acid Chemical class 0.000 description 1
- 229910001961 silver nitrate Inorganic materials 0.000 description 1
- 229960001516 silver nitrate Drugs 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- QUTYHQJYVDNJJA-UHFFFAOYSA-K trisilver;2-hydroxypropane-1,2,3-tricarboxylate Chemical compound [Ag+].[Ag+].[Ag+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O QUTYHQJYVDNJJA-UHFFFAOYSA-K 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type
- H01L31/0745—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells
- H01L31/0747—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN heterojunction type comprising a AIVBIV heterojunction, e.g. Si/Ge, SiGe/Si or Si/SiC solar cells comprising a heterojunction of crystalline and amorphous materials, e.g. heterojunction with intrinsic thin layer or HIT® solar cells; solar cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
The invention discloses a method for replacing traditional photovoltaic low-temperature silver paste with a metal compound and application thereof, wherein the method comprises the following steps: (1) dipping a single copper wire or a copper wire with a protective layer plated on the surface in the conductive slurry; (2) and placing the copper wire coated with the conductive paste on the surface of the photovoltaic cell piece according to a preset pattern, compacting and fixing, and curing and baking to enable the metal composite material to be in lap joint with the photovoltaic cell piece. The conductive paste is silver paste, silver colloid or a silver precursor compound, and is used for preparing a high-conductivity and stable metal compound by wrapping a copper wire with a silver-containing composite material or wrapping a copper wire with an external protective layer, so that the conductive paste can be used for replacing the traditional photovoltaic low-temperature silver paste, and can reduce the preparation cost of a surface electrode of a photovoltaic cell while meeting good performance.
Description
Technical Field
The invention relates to the technical field of photovoltaic cells, in particular to a method for replacing traditional photovoltaic low-temperature silver paste with a metal compound and application thereof.
Background
Solar photovoltaic power generation is a novel power generation technology for directly converting solar radiation into electric energy by utilizing a photovoltaic effect, and has the advantages of sufficient resources, cleanness, safety, long service life and the like. Among them, the HJT cell (heterojunction solar cell) has attracted attention in recent years and has become one of the main development directions of solar cells due to its characteristics of low temperature, high voltage-opening, high efficiency, low temperature coefficient, low attenuation, and symmetric structure, which can generate electricity on both sides.
The current production cost of HJT cells is about 0.18 yuan/W higher than PERC cells, with the cost of the slurry portion being about 0.13 yuan/W higher, which also suggests that the overall production cost of HJT cells is greatly increased due to the cost of the slurry portion. Currently, the slurry cost of the HJT cell is mainly reduced by the following two methods, the first one is by the structural design: a no-main-grid technology is adopted in the links of the battery pieces and the components to reduce the consumption of slurry; and secondly, other alternative materials are used, such as a film-coated copper wire is used for replacing part of silver paste, so that the using amount of the silver paste is reduced, or silver-plated copper powder is used for replacing pure silver powder in the paste, so that the cost is reduced. The invention provides a method for reducing the cost of an electrode material, which can reduce the cost, keep good conductivity and is beneficial to improving the efficiency of a solar cell to a certain extent.
Disclosure of Invention
The invention provides a method for replacing a traditional photovoltaic low-temperature silver paste with a metal compound and application thereof.
In order to solve the technical problems, the invention provides the following technical scheme:
the invention provides a method for replacing traditional photovoltaic low-temperature silver paste with a metal compound, which comprises the following steps:
step (1): dipping a single copper wire or a copper wire with a protective layer plated on the surface into the conductive slurry; the conductive paste is silver paste, silver colloid or a silver precursor compound;
step (2): and placing the copper wire coated with the conductive paste on the surface of the photovoltaic cell piece according to a preset pattern, compacting and fixing, curing and baking to enable the metal composite material prepared based on the copper wire to be in lap joint with the photovoltaic cell piece.
Because the low-temperature silver paste used by the traditional electrode is a mixture of silver powder, resin and the like, although the content of silver is higher, the conductivity of the electrode formed by solidifying the silver paste is lower than that of a silver simple substance, and the conductivity of copper is similar to that of silver.
When the copper line of cladding conductive paste was fixed on photovoltaic cell piece surface, the silver thick liquid and the battery piece contact of bottom played the effect of connecting copper line and battery piece, and toast the in-process at the solidification, because the action of gravity, the silver thick liquid on copper line surface is before the solidification, and a small amount of silver thick liquid can form the structure of similar base along the battery surface of copper line surface flow direction contact after the solidification, has increased the area of contact on electrode and battery surface, is favorable to reducing contact resistance and improves the tensile strength of electrode.
Further, the diameter of the copper wire is 10-100 μm.
Further, the material of the protective layer is silver or tin; the thickness of the protective layer is 1-50 μm.
Further, the silver content in the silver paste is 70 wt% -90 wt%.
Further, the precursor composite of silver comprises the following components by weight: 5 to 80 weight percent of silver salt, 15 to 80 weight percent of solvent, 2 to 10 weight percent of complexing agent, 1 to 15 weight percent of resin, 0.1 to 2 weight percent of curing agent and 0.01 to 0.1 weight percent of surfactant.
Further, the silver salt is one or more of silver nitrate, silver citrate, silver acetate, silver malate and silver fatty acid.
Further, the solvent is one or more of absolute ethyl alcohol, ethylene glycol, propylene glycol, n-propyl alcohol, ethylene glycol butyl ether and ethyl acetate.
Further, the complexing agent is one or more of ethylenediamine, propylenediamine and polyvinylamine.
Further, the resin is one or more of ethyl cellulose, polyvinylpyrrolidone, epoxy resin, polyurethane resin, acrylic resin and polyester resin.
Further, the curing agent is blocked isocyanate.
Further, the surfactant is a fluorine-based surfactant or a silicon-based surfactant.
Further, the time for the impregnation is 1-60 s.
Further, the baking temperature is 150-250 ℃.
Further, the baking time is 20-80 min.
The invention provides an HJT battery, which consists of a front electrode, a first transparent conductive oxide thin film, a p-type amorphous silicon thin film, a first intrinsic amorphous silicon thin film, an n-type silicon wafer, a second intrinsic amorphous silicon thin film, an n-type amorphous silicon thin film, a second transparent conductive oxide thin film and a back electrode from top to bottom in sequence.
Furthermore, the front electrode and the back electrode both comprise copper wires or copper wires with protective layers plated on the surfaces; the electrode and the conductive oxide film are lapped by the method of the first aspect.
Further, the thickness of the silver paste layers of the front electrode and the back electrode is 1-50 μm.
Compared with the prior art, the invention has the following beneficial effects:
1. the invention provides a method for preparing a metal compound by coating a silver paste layer on the surface of a copper wire or the surface of the copper wire plated with a protective layer to replace the traditional photovoltaic low-temperature silver paste as an electrode, which greatly reduces the using amount of the silver paste in the electrode, and the price of the copper wire is relatively low, so that the preparation cost of a photovoltaic cell can be reduced by the method.
2. Compared with the electrode prepared from the traditional pure silver paste, the metal composite electrode prepared from the copper wire and the silver paste layer has the advantages of lower resistance, larger height-width ratio (larger than 1, and smaller than 0.5 of the traditional silver paste electrode), thinner theoretical value of the electrode width when the height-width ratio is larger, increased illumination area of the solar cell and further improved conversion efficiency of the solar cell.
3. The invention prepares the metal compound electrode on the surface of the HJT battery piece, and because the electrode preparation process is a low-temperature process, the energy consumption is reduced, and the heat damage to the battery silicon chip is reduced.
Drawings
FIG. 1 is a cross-sectional view of a metal composite;
FIG. 2 is a schematic structural diagram of an HJT cell with silver paste wrapping a tinned copper wire as an electrode;
FIG. 3 is a schematic structural diagram of an HJT cell with silver paste as an electrode;
FIG. 4 is a schematic circuit diagram of a metal composite electrode;
wherein 1 and 3 are silver paste layers; 2. 5 is a copper wire layer; 4 is a tin coating; 6 is a metal composite electrode (a tinned copper wire coated with a silver paste layer); 7. 15 is a first transparent conductive oxide film; 8. 16 is a p-type amorphous silicon film; 9. 17 is a first intrinsic amorphous silicon thin film; 10. 18 is an n-type silicon wafer; 11. 19 is a second intrinsic amorphous silicon thin film; 12. 20 is an n-type amorphous silicon film; 13. 21 is a second transparent conductive oxide film; 14 is a silver electrode.
Detailed Description
The present invention is further described below in conjunction with the following figures and specific examples so that those skilled in the art may better understand the present invention and practice it, but the examples are not intended to limit the present invention.
Unless defined otherwise, all technical and scientific terms used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs. The terminology used in the description of the invention herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items.
The experimental methods used in the following examples are conventional methods unless otherwise specified, and materials, reagents and the like used therein are commercially available without otherwise specified.
Example 1: HJT battery with copper wire and silver paste as electrodes
The method comprises the steps of placing a copper wire with the diameter of 20 microns in silver paste, dipping the copper wire in the silver paste for 3s, printing the copper wire on transparent conductive oxide films (TCO) on the upper surface and the lower surface of an HJT battery according to a preset pattern, baking the copper wire at 180 ℃ for 30min, solidifying the silver paste on the surface of the copper wire and the surface in contact with the TCO, and fixing the copper wire coated with the silver paste layer on the TCO surface as an electrode, wherein the thickness of the silver paste layer is 10 microns, the line width of the electrode is 40.5 microns, and the height of the electrode is 42 microns.
The cross-sectional view of the copper wire coated with silver paste is shown in fig. 1 a: 1 is a silver paste layer, and 2 is a copper wire.
Example 2: HJT battery with tinned copper wire and silver paste as electrodes
The method comprises the steps of immersing a tinned copper wire coated with a tin layer with the thickness of 5 microns and the diameter of 30 microns in silver paste for 3s, printing the tinned copper wire onto TCOs on the upper surface and the lower surface of an HJT battery according to a preset pattern, baking the tinned copper wire at 180 ℃ for 30min, solidifying silver paste on the surface of the copper wire and the surface in contact with the TCOs, and fixing the copper wire coated with the silver paste layer on the TCOs as an electrode, wherein the thickness of the silver paste layer is 10 microns, the line width of the electrode is 50.3 microns, and the height of the electrode is 59 microns.
The cross-sectional view of the tinned copper wire coated with silver paste is shown in fig. 1 b: 3 is a silver paste layer, 4 is a protective layer tin, and 5 is a copper wire. The schematic diagram of the HJT cell constructed by the above preparation method is shown in fig. 2: wherein 6 is a metal composite electrode (tinned copper wire coated with a silver paste layer), 7 is a first transparent conductive oxide thin film, 8 is a p-type amorphous silicon thin film, 9 is a first intrinsic amorphous silicon thin film, 10 is an n-type silicon wafer, 11 is a second intrinsic amorphous silicon thin film, 12 is an n-type amorphous silicon thin film, and 13 is a second transparent conductive oxide thin film.
Comparative example 1: HJT battery with silver paste as electrode
And printing silver paste on the TCO surface of the HJT battery by screen printing according to a preset pattern, baking for 30min at 180 ℃, and solidifying the silver paste on the TCO surface to form an electrode, wherein the line width of the electrode is 50 micrometers, and the height of the electrode is 18 micrometers.
Comparative example 2: HJT battery with silver paste as electrode
And printing silver paste on the TCO surface of the HJT battery by screen printing according to a preset pattern, baking for 30min at 180 ℃, and solidifying the silver paste on the TCO surface to form an electrode, wherein the line width of the electrode is 50.2 microns, and the height of the electrode is 20 microns.
The schematic structure of HJT cell described in comparative examples 1 and 2 is shown in fig. 3: 14 is a silver electrode, 15 is a first transparent conductive oxide thin film, 16 is a p-type amorphous silicon thin film, 17 is a first intrinsic amorphous silicon thin film, 18 is an n-type silicon wafer, 19 is a second intrinsic amorphous silicon thin film, 20 is an n-type amorphous silicon thin film, and 21 is a second transparent conductive oxide thin film.
Comparison of Performance
The aspect ratio and the resistivity of the electrodes in the above examples and comparative examples, and the photoelectric conversion efficiency of HJT cells prepared from different electrodes, the related parameters and results are shown in table 1 below.
TABLE 1 parameters and Performance test data for the examples and comparative examples
If the electrode of embodiment 1 is a copper wire coated with a silver paste layer, the internal circuit of the electrode is as shown in model one in fig. 4, where R1 is the resistance value of the copper wire, R2 is the resistance value of the silver paste layer, and the resistance of the electrode is 1/(1/R1+ 1/R2); the electrode of example 2 is a tin-plated copper wire coated with a silver paste layer, and the internal circuit of the electrode is as shown in model two in fig. 4, where R1 is the resistance value of the copper wire, R2 is the resistance value of the tin-plated layer, and R3 is the resistance value of the silver paste layer, the resistance of the electrode is 1/(1/R1+1/R2+ 1/R3).
It can be seen from the results that the resistivity of the metal composite electrodes in examples 1 and 2 is much lower than that of the electrodes prepared from the pure silver paste in comparative examples 1 and 2, and the resistance of the electrodes is proportional to the resistivity, so that the resistance of the electrode prepared from the copper wire coated with the silver paste layer is the smallest, which is different from that of the electrode prepared from the pure silver paste in comparative example 1 by two orders of magnitude, and in addition, the photoelectric conversion efficiency of the HJT cell prepared in comparative example 1 is taken as a reference, the photoelectric conversion efficiency of the HJT cells prepared in examples 1 and 2 and comparative example 2 is improved to different degrees, wherein the shielding area of the electrode in example 1 is small, the resistance is low, and the photoelectric conversion efficiency is improved by 0.23% compared with that of comparative example 1.
In summary, the silver paste layer is coated on the surface of the copper wire or the copper wire plated with the protective layer to replace the traditional photovoltaic low-temperature silver paste to serve as the electrode of the solar cell, so that the usage amount of the silver paste in the electrode is reduced, and further the cost is reduced, and compared with the electrode prepared from pure silver paste, the resistance of the metal composite electrode prepared from the copper wire is smaller, in addition, the height-width ratio of the metal composite electrode serving as the electrode can reach more than 1, which is far higher than the height-width ratio (less than 0.5) of the existing electrode using the silver paste as the electrode, and the larger the height-width ratio value is, the narrower the width of the opposite electrode is, so that the illumination area is favorably increased, and further the photoelectric conversion efficiency of the solar cell is improved.
The above-mentioned embodiments are merely preferred embodiments for fully illustrating the present invention, and the scope of the present invention is not limited thereto. The equivalent substitution or change made by the technical personnel in the technical field on the basis of the invention is all within the protection scope of the invention. The protection scope of the invention is subject to the claims.
Claims (10)
1. The method for replacing the traditional photovoltaic low-temperature silver paste by the metal compound is characterized by comprising the following steps of:
step (1): dipping a single copper wire or a copper wire with a protective layer plated on the surface into the conductive slurry; the conductive paste is silver paste, silver colloid or a silver precursor compound;
step (2): and placing the copper wire coated with the conductive paste on the surface of the photovoltaic cell piece according to a preset pattern, compacting and fixing, curing and baking to enable the metal composite material prepared based on the copper wire to be in lap joint with the photovoltaic cell piece.
2. The method for replacing traditional photovoltaic low-temperature silver paste by metal composite according to claim 1, wherein the diameter of the copper wire is 10-100 μm.
3. The method for replacing the traditional photovoltaic low-temperature silver paste by the metal composite according to claim 1, wherein the material of the protective layer is silver or tin.
4. The method for replacing the traditional photovoltaic low-temperature silver paste with the metal composite according to claim 1, wherein the silver content in the silver paste is 70-90 wt%.
5. The method of claim 1, wherein the precursor composite of silver comprises the following components by weight: 5 to 80 weight percent of silver salt, 15 to 80 weight percent of solvent, 2 to 10 weight percent of complexing agent, 1 to 15 weight percent of resin, 0.1 to 2 weight percent of curing agent and 0.01 to 0.1 weight percent of surfactant.
6. The method for replacing the traditional photovoltaic low-temperature silver paste by the metal composite according to claim 1, wherein the immersion time is 1-60 s.
7. The method as claimed in claim 1, wherein the baking temperature is 150 ℃ to 250 ℃.
8. The method for replacing the traditional photovoltaic low-temperature silver paste by the metal composite according to claim 1, wherein the baking time is 20-80 min.
9. An HJT battery sequentially comprises a front electrode, a first transparent conductive oxide film, a p-type amorphous silicon film, a first intrinsic amorphous silicon film, an n-type silicon wafer, a second intrinsic amorphous silicon film, an n-type amorphous silicon film, a second transparent conductive oxide film and a back electrode from top to bottom, and is characterized in that the front electrode and the back electrode both comprise copper wires or copper wires with protective layers plated on the surfaces; the electrode is lapped with a conductive oxide thin film by the method of any one of claims 1 to 8.
10. The HJT cell of claim 9, wherein the thickness of the silver paste layers of the front and back electrodes is 1-50 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110950879.6A CN113611778A (en) | 2021-08-18 | 2021-08-18 | Method for replacing traditional photovoltaic low-temperature silver paste with metal compound and application of metal compound |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110950879.6A CN113611778A (en) | 2021-08-18 | 2021-08-18 | Method for replacing traditional photovoltaic low-temperature silver paste with metal compound and application of metal compound |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113611778A true CN113611778A (en) | 2021-11-05 |
Family
ID=78308968
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110950879.6A Pending CN113611778A (en) | 2021-08-18 | 2021-08-18 | Method for replacing traditional photovoltaic low-temperature silver paste with metal compound and application of metal compound |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113611778A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114156349A (en) * | 2021-11-08 | 2022-03-08 | 苏州诺菲纳米科技有限公司 | Solar cell and manufacturing method thereof |
| CN114864707A (en) * | 2022-05-13 | 2022-08-05 | 东方日升新能源股份有限公司 | Photovoltaic cell and preparation method thereof |
| CN115000192A (en) * | 2022-04-19 | 2022-09-02 | 新余赛维电源科技有限公司 | Solar cell module and preparation method thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103366854A (en) * | 2013-07-08 | 2013-10-23 | 余小翠 | Composite electrode material for preparing positive electrode of photovoltaic cell |
| CN105489675A (en) * | 2014-09-18 | 2016-04-13 | 朱永生 | Novel photovoltaic cell module and manufacturing method for same |
| CN112038424A (en) * | 2020-09-29 | 2020-12-04 | 东方日升（常州）新能源有限公司 | Heterojunction battery and preparation method and assembly thereof |
-
2021
- 2021-08-18 CN CN202110950879.6A patent/CN113611778A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103366854A (en) * | 2013-07-08 | 2013-10-23 | 余小翠 | Composite electrode material for preparing positive electrode of photovoltaic cell |
| CN105489675A (en) * | 2014-09-18 | 2016-04-13 | 朱永生 | Novel photovoltaic cell module and manufacturing method for same |
| CN112038424A (en) * | 2020-09-29 | 2020-12-04 | 东方日升（常州）新能源有限公司 | Heterojunction battery and preparation method and assembly thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114156349A (en) * | 2021-11-08 | 2022-03-08 | 苏州诺菲纳米科技有限公司 | Solar cell and manufacturing method thereof |
| CN115000192A (en) * | 2022-04-19 | 2022-09-02 | 新余赛维电源科技有限公司 | Solar cell module and preparation method thereof |
| CN114864707A (en) * | 2022-05-13 | 2022-08-05 | 东方日升新能源股份有限公司 | Photovoltaic cell and preparation method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN113611778A (en) | Method for replacing traditional photovoltaic low-temperature silver paste with metal compound and application of metal compound | |
| TWI362759B (en) | Solar module and system composed of a solar cell with a novel rear surface structure | |
| US20100096014A1 (en) | Conductive paste for solar cell | |
| JP5258325B2 (en) | Solar cell module | |
| CN102280161A (en) | Conductive paste for positive electrode of crystal silicon solar cell and preparation method of conductive paste | |
| CN102324267A (en) | High-photoelectric-conversion-efficiency crystalline silicon solar battery aluminum paste and preparation method thereof | |
| CN112071468B (en) | Conductive slurry for HJT battery and preparation method thereof | |
| JP2008270743A5 (en) | ||
| CN102881351B (en) | Back tin electrode slurry for crystalline silicon photovoltaic cells and method for preparing back tin electrode slurry | |
| CN102280160A (en) | Conductive paste for back electrode of silicon solar cell and preparation method of conductive paste | |
| CN114360760B (en) | Conductive powder, thick film silver-aluminum paste, and preparation method and application thereof | |
| CN109949966B (en) | High-reliability PERC crystalline silicon solar cell back silver conductive paste and preparation process thereof | |
| CN109390076B (en) | Anti-aging low-temperature curing type back silver paste for all-aluminum back surface field crystalline silicon solar cell | |
| CN109659068B (en) | Low-temperature curing type back silver paste for all-aluminum back surface field crystalline silicon solar cell | |
| CN104716213A (en) | Photovoltaic cell module and manufacturing method thereof | |
| CN113571591A (en) | Manufacturing method of heterojunction photovoltaic cell grid line electrode | |
| CN113571258B (en) | Method for replacing HJT photovoltaic low-temperature silver paste with metal composite paste | |
| CN108428492B (en) | Solar cell front electrode slurry | |
| TW201220517A (en) | The method for forming the contact pattern on the solar cell surface | |
| TWI473119B (en) | Conductive silver paste with glass frit and method of increasing the adhesion force of the back side silver electrode on solar cells by thereof conductive silve paste | |
| TW200947717A (en) | An electroconductive paste for solar cell | |
| TWI550641B (en) | Conductive composition and method for manufacturing | |
| CN108389928B (en) | Solar cell and preparation method thereof | |
| RU172396U1 (en) | SUN ELEMENT | |
| TWI482291B (en) | An electroconductive paste for solar cell |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination |