CN104716213A - Photovoltaic cell module and manufacturing method thereof - Google Patents

Photovoltaic cell module and manufacturing method thereof Download PDF

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Publication number
CN104716213A
CN104716213A CN201510074160.5A CN201510074160A CN104716213A CN 104716213 A CN104716213 A CN 104716213A CN 201510074160 A CN201510074160 A CN 201510074160A CN 104716213 A CN104716213 A CN 104716213A
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electrocondution slurry
curing type
cell piece
interconnected
grid line
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CN104716213B (en
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黄强
陈华
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Changzhou heterojunction management consulting partnership (L.P.)
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Xinyang Normal University
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    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy

Abstract

The invention relates to a photovoltaic cell module and a manufacturing method thereof. An interconnection lead wire of the photovoltaic cell module is connected with a thin grid line and a function ceramic thin film through cured type conducting slurry. According to the manufacturing method of the photovoltaic cell module, the interconnection lead wire coated with the cured type conducting slurry is attached to the surface of a cell piece in a pressing mode, and then curing is carried out; or the cured type conducting slurry is printed on the surface of the cell piece, then the interconnection lead is attached to the cured type conducting slurry in a pressing mode, and connecting of the thin grid line, the function ceramic thin film and the interconnection lead wire is achieved by curing; or a main grid line formed by curing of the cured type conducting slurry is arranged on the surface of the cell piece of the photovoltaic cell module. The photovoltaic cell module and the manufacturing method thereof have the advantages that the interconnection lead wire does not need to be connected with the cell piece through the high-temperature-sintered traditional main grid line, so that the processing step can be well simplified, and the performance of the cell piece is improved; and scaling powder and a protecting thin film are of no need, and the long-time stability of a component is improved.

Description

Photovoltaic battery module and preparation method thereof
Technical field
The present invention relates to a kind of photovoltaic battery module and preparation method thereof.
Background technology
At present, the most photovoltaic cell of industry and assembly manufacturer, adopt battery electrode design and the mutual contact mode of 2 ~ 5 main gate line (Bus bar).First, in the manufacture process of photovoltaic cell, the front of a cell piece, forms the thin grid line of about 55 ~ 90 60 ~ 100um width by the mode of silk screen printing and high temperature sintering.These thin grid lines are generally connected together by the main gate line of 2 1.8mm.Then, in the manufacture process of photovoltaic module, the main gate line of cell piece is electrically connected with the interconnected wire of copper being coated with Sn layer by the welding process of high temperature (~ 200 DEG C).The photogenerated current of the battery surface collected by thin grid line, is pooled in main gate line, then transfers on about 0.4mm is thick, 2mm the is wide interconnected wire of painting Sn copper.Here, the width of main gate line is wider, and in electrical contact better, contact resistance is lower, is conducive to electricity conversion and promotes.But main gate line is wider, the shade masking amount that main gate line and corresponding interconnected wire cause is also larger, and this causes again photoelectric conversion efficiency to reduce.Consider contact resistance and optical obscurations two factor Competition, oriented 5 main grids of current industry, even carry out the interconnected trend without main gate line photovoltaic cell design transition to the thin interconnected wire of employing 15 ~ 50.
A kind of without main gate line photovoltaic cell scheme disclosed in Canadian Patent document CA 2496557, the mode that Canadian Creative Company Day4 adopts the many thin interconnected wires of circle (<1mm diameter) and transparent protective film to combine prepares basic Electrode connection unit.But in this design, circular thin interconnected wire to be embedded in transparent protective film and to be connected to photovoltaic cell, and wherein transparent protective film is for improving navigability.Similar, also illustrate in Germany Patent document DE10239845C1 a kind of contact wire to be fixed on transparent protective film by means of optically transparent bonding colloid and be fixed to subsequently on the metal layer of photovoltaic cell without main gate line photovoltaic cell scheme.
Without main gate line photovoltaic cell scheme disclosed in above-mentioned patent documentation, the use of circular thin interconnected wire improves photovoltaic battery module reliability of structure.After this has benefited from circular thin interconnected conductive line surfaces volume ratio increase, pliability increases greatly.Meanwhile, because the thin interconnected arrangement of conductors of circle is more disperseed, more silicon chip surfaces can be connected to.Even if having, part is hidden to be split, and still can connect collapsed portion by circular thin interconnected wire and not affect electric current collection, strengthen subassembly product reliability.
Disclosed in above-mentioned patent documentation without in main gate line photovoltaic cell scheme, if the painting tin copper wire technology that thin interconnected wire uses industry conventional, just need to use scaling powder.The area coverage of thin interconnected wire is little, cannot the region crossed of the equally intact covering scaling powder spraying of image width copper bar.Therefore, the corrosivity of scaling powder causes near welding lead, is easy to form a series of integrity problems such as " black line or blackspots ".For avoiding the problems referred to above, low melting point can be adopted to contain the scheme of In noble metal.Electroplate one deck In metal to replace original painting Sn technique in the thin interconnected conductive line surfaces of circle, just can avoid using scaling powder.But relatively high cost can be caused like this.
If remove transparent protective film and directly use the thin interconnected wire of circle plating In, in the component lamination step after photovoltaic cell is interconnected, the glue being exposed to liquefaction is connected material, as in EVA or silica gel by circular thin interconnected wire.We test discovery, and in lamination process, EVA upwards can leave the thrust of battery surface to circular thin one, interconnected wire along the cambered surface of the thin interconnected wire bottom of circle, may break pad, thus affect outward appearance and the reliability of photovoltaic module.
In such scheme, because film and adhesive agent remain in solar module, this means that in long-time stability, relatively high requirement is existed to adhesive agent and film, also cause relatively high cost.
Summary of the invention
Technical problem to be solved by this invention is: provide a kind of photovoltaic battery module and preparation method thereof, can avoid using transparent protective film and noble metal In coating in CA 2496557 to reduce costs, can avoid again using scaling powder to guarantee product quality.
The technical solution adopted for the present invention to solve the technical problems is: a kind of photovoltaic battery module, comprise cell piece, the surface of cell piece has the functional ceramic film around thin grid line and thin grid line, also have interconnected wire on the surface of cell piece, interconnected wire is connected by curing type electrocondution slurry with thin grid line and functional ceramic film.
Further restriction, curing type electrocondution slurry is wrapped in the surface of interconnected wire.
Further restriction, curing type electrocondution slurry is heat-curing type electrocondution slurry, and curing temperature is 50 ~ 600 DEG C, and preferably curing temperature is 100 ~ 300 DEG C.
Further restriction, the width of interconnected wire is between 0.03 ~ 1.5mm, and height is between 0.03 ~ 0.4mm, and the quantity of interconnected wire is 3 ~ 50, and preferably, the radical of interconnected wire is 15 ~ 30.
Further restriction, the bottom flat of interconnected wire, preferably, its cross sectional shape is square, triangle, the combination of semicircle or above-mentioned three kinds of shapes.
Further restriction, the conductive filler in curing type electrocondution slurry is Cu or Al or Ni or Ag or their alloy.
Further restriction, the material of interconnected wire is Cu or Al or Ni or Ag or their alloy.
A kind of manufacture method of above-mentioned photovoltaic battery module, first curing type electrocondution slurry is coated in interconnected conductive line surfaces, then the interconnected wire of coating curing type electrocondution slurry is overlayed the surface at cell piece, under the condition of cure of curing type electrocondution slurry, curing type electrocondution slurry is cured, realizes the connection of interconnected wire and thin grid line and functional ceramic film.
The manufacture method of another kind of above-mentioned photovoltaic battery module, first curing type electrocondution slurry is printed on the surface of cell piece by the mode of printing, then interconnected wire is overlayed on curing type electrocondution slurry, under the condition of cure of curing type electrocondution slurry, curing type electrocondution slurry is cured, realizes the connection of interconnected wire and thin grid line and functional ceramic film.
A kind of photovoltaic battery module, comprise cell piece, cell piece surface has the functional ceramic film around thin grid line and thin grid line, also there is on the surface of cell piece the main gate line of curing type electrocondution slurry solidification, this main gate line is positioned at the top of thin grid line and functional ceramic film, and to be formed with thin grid line and functional ceramic film when solidifying and be connected.
The solderability of curing type electrocondution slurry requires higher, and cost is higher, and for reducing the cost of electrocondution slurry and improving soldering reliability, limit further, cell piece has the pad for being connected with main gate line, interconnect conductors is connected with main gate line by pad.
The invention has the beneficial effects as follows: 1) interconnected wire no longer needs to be connected with cell piece by traditional main gate line (slurry high temperature sintering also penetrates the functional ceramic film formation such as SiNx, AlOx of battery surface), thus the corrosivity requirement to electrocondution slurry is reduced, the use of the high temperature glass powders such as PbO can be avoided, be conducive to Simplified flowsheet step, improve the performance of cell piece.2) by solidifying while curing type electrocondution slurry and interconnected wire, under avoiding the many thin interconnected wires being generally less than 0.5mm, cannot scaling powder be used, and need the situation using protective film, improve the long-time stability of assembly.
Accompanying drawing explanation
Below in conjunction with drawings and Examples, the present invention is further described;
Fig. 1 a1 is the structural representation of traditional photovoltaic battery module;
Fig. 1 a2 is the structural representation of photovoltaic battery module of the present invention;
Fig. 1 b1 is the sectional view of the thin grid line part of traditional photovoltaic battery module;
Fig. 1 b2 is the sectional view of the thin grid line part of photovoltaic battery module of the present invention;
Fig. 1 c1 is the sectional view of the main gate line part of traditional photovoltaic battery module;
Fig. 1 c2 is the sectional view of the interconnected main gate line part of photovoltaic battery module of the present invention;
Fig. 1 d1 is the sectional view of the interconnected wire of traditional photovoltaic battery module;
Fig. 1 d2 is the sectional view of the interconnected wire of photovoltaic battery module of the present invention;
Fig. 2 a is the another kind of structural representation of photovoltaic battery module of the present invention;
Fig. 2 b is the third structural representation of photovoltaic battery module of the present invention;
In figure, 1. thin grid line, 2. functional ceramic film, 3. interconnected main gate line, 31. interconnected wires, 32. curing type electrocondution slurry, 4. main gate line, 5. doped layers, 6. auxiliary connection metal sheet.
Embodiment
A kind of photovoltaic battery module, comprise cell piece, the surface of cell piece has the functional ceramic film 2 around thin grid line 1 and thin grid line 1, also has interconnected wire 31 on the surface of cell piece, and interconnected wire 31 is connected by curing type electrocondution slurry 32 with thin grid line 1 and functional ceramic film 2.Wherein thin grid line 1 is directly electrically connected with primary collection electric current with cell piece, and interconnected wire 31 forms good electrical by curing type electrocondution slurry 32 with thin grid line 1 and is connected, and collects further and transmission current.Interconnected wire 31 forms mechanical connection by curing type electrocondution slurry 32 and functional ceramic film 2, but curing type electrocondution slurry 32 does not penetrate functional ceramic film 2, and the functional ceramic film 2 on cell piece surface is as SiNx, AlOx or InTiOx etc.For conductivity functional ceramic film, as InTiOx, curing type electrocondution slurry 32 and InTiOx, except being formed and being mechanically connected, also form electrical connection.
The width of interconnected wire 31 is between 0.03 ~ 1.5mm, and height is between 0.03 ~ 0.4mm, and the quantity of interconnected wire 31 is 3 ~ 50, and preferably, the radical of interconnected wire 31 is 15 ~ 30.The bottom flat of interconnected wire 31, preferably, its cross sectional shape is square, triangle, the combination of semicircle or above-mentioned three kinds of shapes.The material of interconnected wire 31 is Cu or Al or Ni or Ag or their alloy.
Conductive filler in curing type electrocondution slurry 32 is Cu or Al or Ni or Ag or their alloy.
Curing type electrocondution slurry 32 adopts heat-curing type electrocondution slurry, and curing temperature is 50 ~ 600 DEG C, and preferably, curing type electrocondution slurry 32 adopts heat-curing type Cu electrocondution slurry or heat-curing type Ag electrocondution slurry, and curing temperature is 100 ~ 300 DEG C.
Above-mentioned photovoltaic battery module has two kinds of manufacture methods, respectively:
A kind of manufacture method of photovoltaic battery module is: first curing type electrocondution slurry 32 is coated in interconnected wire 31 surface, then the interconnected wire 31 of coating curing type electrocondution slurry 32 is overlayed the surface at cell piece, under the condition of cure of curing type electrocondution slurry 32, curing type electrocondution slurry is cured, realizes the connection of interconnected wire 31 and thin grid line 1 and functional ceramic film 2.
Or, a kind of manufacture method of photovoltaic battery module is: the surface first curing type electrocondution slurry 32 being printed on cell piece by the mode of printing, then interconnected wire 31 is overlayed on curing type electrocondution slurry 32, under the condition of cure of curing type electrocondution slurry 32, curing type electrocondution slurry is cured, realizes the connection of interconnected wire 31 and thin grid line 1 and functional ceramic film 2.
Shown in Fig. 1 a2, Fig. 1 b2, Fig. 1 c2, Fig. 1 d2 is the photovoltaic battery module be made with the manufacture method of the first photovoltaic battery module; For ease of contrasting and innovative point of the present invention being described, Fig. 1 a1, Fig. 1 b1, Fig. 1 c1, Fig. 1 d1 give also the structural representation of original photovoltaic battery module.
As shown in Fig. 1 a1, thin grid line 1 bandpass on the cell piece surface of former photovoltaic battery module at 30 ~ 100um, height at 15 ~ 25um, by after the silk screen printing of burning infiltration type Ag electrocondution slurry at 600 ~ 900 DEG C high temperature sintering formed.Main gate line 4 and the thin grid line 1 on the cell piece surface of former photovoltaic battery module are similar, form primarily of Ag, by high temperature sintering formation at 600 ~ 900 DEG C after silk screen printing.Also there is on the surface of cell piece the painting Sn copper strips as interconnected wire 31, welded together with main gate line 4 at the temperature of about 200 DEG C.Fall into photosphere at the functional ceramic film 2 on the surface of cell piece for passivation, be generally the SiNx layer of passivation and light trapping effect.Wave in Fig. 1 a1 represents the meaning of breviary.Interconnected wire 31 is connected with the back side of another one cell piece outside wave.These are all very familiar to row insider, so eliminate with wave.In Fig. 1 b1, it is doped layer 5 that passivation falls into below photosphere, is N-type doped layer in conventional batteries sheet.What Fig. 1 b1 showed is the sectional view of the thin grid line part of conventional batteries sheet, can see, the thin grid line 1 of original cell piece, by the high-sintering process of 600 ~ 900 DEG C, penetrate passivation and fallen into photosphere, together with being electrically connected to the doped layer 5 of cell piece.What Fig. 1 c1 showed is the sectional view of the main gate line part of conventional batteries sheet.Here main gate line 4 is in high-temperature sintering process, has also penetrated passivation and has fallen into photosphere, together with being electrically connected to the doped layer 5 of cell piece.At the upper surface of main gate line 4, one be coated with Sn copper strips and main gate line 4 welded together.
The structural representation that curing type electrocondution slurry 32 of the present invention is wrapped in the photovoltaic battery module on the surface of interconnected wire 31 is given in Fig. 1 a2, Fig. 1 b2, Fig. 1 c2, Fig. 1 d2.In Fig. 1 a2, thin grid line 1 can be consistent with grid line 1 thin in Fig. 1 a1, because the number of wire 31 interconnected in Fig. 1 a2 is more, so the disconnected grid design of thin grid line 1 is more, also more can save the consumption of the burning infiltration type Ag electrocondution slurry for making thin grid line 1.Curing type electrocondution slurry 32 is coated in interconnected wire 31 surface and forms interconnected main gate line 3, the main gate line 4 in replacement Fig. 1 a1 and the function of interconnected wire 31.Auxiliary connection metal sheet 6 is selectable unit, for connecting with the interconnected wire 31 being connected cell piece front and back respectively.Thin grid line 1 in Fig. 1 b2 and Fig. 1 b1, passivation fall into photosphere, doped layer 5 is completely the same, and main innovation is relevant with main gate line 4 part, as shown in Fig. 1 c2.Interconnected main gate line 3 and thin grid line 1 intersect vertically.By (being generally 100-600 DEG C) solidification of heating, curing type electrocondution slurry 32 and thin grid line 1, curing type electrocondution slurry 32 and interconnected wire 31 form good electric connection.
Compare with original battery technology, the Main Function of curing type electrocondution slurry 32 is: 1) complete the electrical connection between interconnected wire 31 and thin grid line 1; 2) complete the mechanical connection between interconnected main gate line 3 and functional ceramic film 2, but do not burn functional ceramic film 2.The main gate line 4 of primary cell technology and interconnected wire 31 merge by above-mentioned design of the present invention, and the function of main gate line 4 with thin grid line 1 is thoroughly separated with material requirements, change and first form main gate line 4 with burning infiltration type electrocondution slurry, and then welding is coated with the process of Sn copper strips in main gate line 4, avoiding problems the use of corrosive flux, thus avoid the hidden danger of quality such as blackspot, black line.This design it also avoid the use of the plating In copper conductor of high cost.
The cross sectional shape of Fig. 1 d1 and Fig. 1 d2 to the interconnected wire 31 in original technology and the interconnected main gate line 3 containing interconnected wire 31 of the present invention contrasts.As shown in Fig. 1 d1, original technology from 3 main gate line 4 excessively in without main gate line, the cross section of interconnected wire 31 is changed to circle from rectangle.In component lamination step after cell piece is interconnected, the glue being exposed to liquefaction is connected material, as in EVA or silica gel by circular interconnected wire 31.We test discovery, and in lamination process, EVA upwards can leave the thrust on cell piece surface to 31 1 circular, interconnected wire along the cambered surface of interconnected wire 31 bottom of circle, breaks pad, thus affects outward appearance and the reliability of photovoltaic module.
Therefore, the invention provides a kind of interconnected wire shape of improvement, the bottom flat of interconnected wire 31, preferably, its cross sectional shape is square, triangle, the combination of semicircle or above-mentioned three kinds of shapes.As shown in Fig. 1 d2, due to interconnected wire 31 bottom flat, there are curing type electrocondution slurry 32 and the mechanical connection effect of the functional ceramic film 2 on cell piece surface simultaneously, in lamination process, only have downward active force, as shown in phantom in FIG..
Embodiment 1: for the embodiment of conventional P-type battery, uses the interconnected wire of Cu and heat-curing type Cu electrocondution slurry.
Select 15 thin Cu lines to make interconnected wire 31 between cell piece and cell piece, the cross section of thin Cu line is square, and the square length of side is 0.3mm.Thin Cu line surface is not coated with Sn layer.
At the surface-coated heat-curing type Cu electrocondution slurry of thin Cu line.The solid content of heat-curing type Cu electrocondution slurry is 60-90%, density 3.5 ~ 6g/cm 3.Coating thickness is about 5um.
By haulage gear by stretching for thin Cu line, roller bearing is selected to brush mode to thin Cu line coating heat-curing type Cu electrocondution slurry.Thin Cu line applies the region of heat-curing type Cu electrocondution slurry only for the region needing to be connected with cell piece, the region between the haulage gear, cell piece of thin Cu line, does not apply heat-curing type Cu electrocondution slurry.
The thin Cu line pressure being coated with heat-curing type Cu electrocondution slurry is attached to cell piece surface and with thin grid line 1 vertical interlaced.
Cell piece is conventional P type cell piece, and the functional ceramic film 2 on surface has been the SiNx layer of passivation light trapping effect, and thickness is 80nm.Thin grid line 1 is the thin grid line of Ag.The thin grid line electrocondution slurry of silk screen printing, at high temperature 800 DEG C sintering, penetrates SiNx layer and forms electrical connection.
By infrared heating, heat-curing type Cu electrocondution slurry is heated to 150 DEG C, heat-curing type Cu electrocondution slurry is solidified, complete the electrical connection between interconnected main gate line 3 and thin grid line 1; Complete the mechanical connection between interconnected main gate line 3 and functional ceramic film 2.Heat-curing type Cu electrocondution slurry does not penetrate SiNx layer.As shown in Fig. 1 c2 figure.
The back side of the interconnected main gate line of can having used the same method 3 and adjacent cell sheet interconnected, as shown in Fig. 1 a2, the interconnected main gate line 3 connecting cell piece front is connected by auxiliary connection metal sheet 6 between two with the interconnected main gate line 3 being connected the adjacent cell sheet back side, cuts off unnecessary interconnected wire 31.Lay the encapsulating material such as EVA, glass, laminating packaging, form photovoltaic module product.
Embodiment 2: for the embodiment of thin film silicon/crystalline silicon heterojunction battery, uses the interconnected wire of Cu and heat-curing type Cu electrocondution slurry.
Select 15 thin Cu lines to make interconnected wire 31 between cell piece and cell piece, the cross section of thin Cu line is square, and the square length of side is 0.3mm.Thin Cu line surface is not coated with Sn layer.
At the surface-coated heat-curing type Cu electrocondution slurry of thin Cu line.The solid content of heat-curing type Cu electrocondution slurry is 60-90%, density 3.5 ~ 6g/cm 3.Coating thickness is about 5um.
By haulage gear by stretching for thin Cu line, roller bearing is selected to brush mode to thin Cu line coating heat-curing type Cu electrocondution slurry.Thin Cu line applies the region of heat-curing type Cu electrocondution slurry only for the region needing to be connected with cell piece, the region between the haulage gear, cell piece of thin Cu line, does not apply heat-curing type Cu electrocondution slurry.
The thin Cu line pressure being coated with heat-curing type Cu electrocondution slurry is attached to cell piece surface and with thin grid line 1 vertical interlaced.
Cell piece is thin film silicon/crystalline silicon heterojunction cell piece, and the functional ceramic film 2 on surface is InTiOx layer, and the Ag slurry of silk screen printing exists.Thin grid line 1 is the thin grid line of Ag.For avoiding reducing passivation effect and battery performance after amorphous silicon high temperature crystallization in thin film silicon/crystalline silicon heterojunction cell piece, the thin grid line electrocondution slurry of silk screen printing sinters <200 DEG C of temperature.
By infrared heating, heat-curing type Cu electrocondution slurry is heated to 150 DEG C, heat-curing type Cu electrocondution slurry is solidified, complete the electrical connection between interconnected main gate line 3 and thin grid line 1; Complete the machinery between interconnected main gate line 3 and functional ceramic film 2 and electrical connection.Heat-curing type Cu electrocondution slurry does not penetrate InTiOx layer.As shown in Fig. 1 c2 figure.
Because the functional ceramic film 2 of thin film silicon/crystalline silicon heterojunction battery is transparent conductive body InTiOx, different with the insulator SiNx of common batteries, so in this example, interconnected main gate line 3 and functional ceramic film 2 form machinery and electrical connection simultaneously.
Embodiment 3: for the embodiment of thin film silicon/crystalline silicon heterojunction battery, uses the interconnected wire of Cu and heat-curing type Ag electrocondution slurry.Describing identical with other of embodiment 2, is only the heat-curing type Ag electrocondution slurry that the thermohardening type Cu electrocondution slurry of low-temperature setting is replaced by low-temperature setting conventional in photovoltaic cell industry.
Embodiment 4: for the embodiment of thin film silicon/crystalline silicon heterojunction battery, uses the interconnected wire of Cu and the thermohardening type Cu electrocondution slurry of plating Ni.Describing identical with other of embodiment 2, is only plate Ni outward at the interconnected wire of Cu.
Embodiment 5: for the embodiment of thin film silicon/crystalline silicon heterojunction battery, uses the interconnected wire of Cu and the thermohardening type Ag electrocondution slurry of plating Ni.Describing identical with other of embodiment 3, is only plate Ni outward at the interconnected wire of Cu.
The core of the invention described above specific embodiment is: 1) adopt curing type electrocondution slurry 32 and interconnected wire 31 to replace traditional main gate line 4, interconnected wire 31 no longer needs traditional main gate line 4 of the functional ceramic films 2 such as SiNx, AlOx by penetrating battery surface to be connected with cell piece, thus reduce the corrosivity requirement to electrocondution slurry, the use of the high temperature glass powders such as PbO can be avoided.2) by solidifying while curing type electrocondution slurry 32 and interconnected wire 31, the problem of scaling powder cannot be used under solving the many thin interconnected wires being generally less than 0.5mm, also solve the problem that the interconnected wire 31 in lamination process upwards floats.
In line with these core concepts, the present invention can also have other simple variant.
Such as, a kind of photovoltaic battery module, comprise cell piece, cell piece surface has the functional ceramic film 2 around thin grid line 1 and thin grid line 1, also there is on the surface of cell piece the main gate line 4 that curing type electrocondution slurry 32 solidifies, this main gate line 4 is positioned at the top of thin grid line 1 and functional ceramic film 2, and to be formed with thin grid line 1 and functional ceramic film 2 when solidifying and be connected.Directly adopt curing type electrocondution slurry 32 to solidify to form main gate line 4 in this photovoltaic battery module, interconnected wire 31 only at a few pad of cell piece as edge joint weld contact place is connected with main gate line 4.
Or, interconnected main gate line 3 by wire bar 7 form that network structure carries out between cell piece interconnected.
Further illustrate below by 2 specific embodiments.
Embodiment 6: the main gate line 4 in cell piece is directly formed by curing type electrocondution slurry 32 solidification.
As shown in Figure 2 a, curing type electrocondution slurry 32 vertical interlaced is on thin grid line 1.Other descriptions are identical with in embodiment 1, but curing type electrocondution slurry 32 inside in embodiment 6 no longer includes interconnected copper wire.Only the wire bar 7 being convenient to weld is had to be connected with curing type electrocondution slurry 32 in the edge of cell piece.Connection between two panels cell piece is completed by common process.
Embodiment 7: it is interconnected that the interconnected main gate line 3 be made up of the interconnected wire 31 of parcel curing type electrocondution slurry 32 and wire bar 7 form that network structure carries out between cell piece.
As shown in Figure 2 b, interconnected main gate line 3 and the wire bar 7 being connected and fixed interconnected main gate line 3, and be connected to form netted between the auxiliary connection metal sheet 6 be connected between cell piece with cell piece, there is certain mechanical strength, be convenient to manual manipulation.

Claims (10)

1. a photovoltaic battery module, comprise cell piece, the surface of cell piece has the functional ceramic film around thin grid line and thin grid line, it is characterized in that: also have interconnected wire on the surface of described cell piece, described interconnected wire is connected by curing type electrocondution slurry with thin grid line and functional ceramic film.
2. photovoltaic battery module according to claim 1, is characterized in that: described curing type electrocondution slurry is wrapped in the surface of interconnected wire.
3. photovoltaic battery module according to claim 1 and 2, is characterized in that: described curing type electrocondution slurry is heat-curing type electrocondution slurry, and curing temperature is 50 ~ 600 DEG C.
4. photovoltaic battery module according to claim 1 and 2, is characterized in that: the width of described interconnected wire is between 0.03 ~ 1.5mm, and height is between 0.03 ~ 0.4mm, and the quantity of interconnected wire is 3 ~ 50.
5. photovoltaic battery module according to claim 1 and 2, is characterized in that: the cross sectional shape of described interconnected wire is square, triangle and semicircle.
6. photovoltaic battery module according to claim 1 and 2, it is characterized in that: the conductive filler in described curing type electrocondution slurry is Cu or Al or Ni or Ag or their alloy, the material of described interconnected wire is Cu or Al or Ni or Ag or their alloy.
7. the manufacture method of a photovoltaic battery module according to claim 1, it is characterized in that: first described curing type electrocondution slurry is coated in interconnected conductive line surfaces, then the interconnected wire of coating curing type electrocondution slurry is overlayed the surface at cell piece, under the condition of cure of curing type electrocondution slurry, curing type electrocondution slurry is cured, realizes the connection of interconnected wire and thin grid line and functional ceramic film.
8. the manufacture method of a photovoltaic battery module according to claim 1, it is characterized in that: the surface first described curing type electrocondution slurry being printed on cell piece by the mode of printing, then interconnected wire is overlayed on curing type electrocondution slurry, under the condition of cure of curing type electrocondution slurry, curing type electrocondution slurry is cured, realizes the connection of interconnected wire and thin grid line and functional ceramic film.
9. a photovoltaic battery module, comprise cell piece, cell piece surface has the functional ceramic film outside thin grid line, thin grid line, it is characterized in that: the main gate line also on the surface of described cell piece with the solidification of curing type electrocondution slurry, this main gate line is positioned at the top of thin grid line and functional ceramic film, and to be formed with thin grid line and functional ceramic film when solidifying and be connected.
10. photovoltaic battery module according to claim 9, is characterized in that: described cell piece has the pad for being connected with main gate line, interconnect conductors is connected with main gate line by pad.
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CN106847968A (en) * 2017-02-17 2017-06-13 华东理工大学 A kind of method for packing of two-sided crystal silicon heterojunction dereliction grid solar cell piece
WO2020034474A1 (en) * 2018-08-13 2020-02-20 苏州迈为科技股份有限公司 Method for preparing aspect-ratio conductive wire based on solar cell panel
CN111403490A (en) * 2018-12-28 2020-07-10 泰州隆基乐叶光伏科技有限公司 Preparation method of solar cell interconnection structure

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Publication number Priority date Publication date Assignee Title
CN106847968A (en) * 2017-02-17 2017-06-13 华东理工大学 A kind of method for packing of two-sided crystal silicon heterojunction dereliction grid solar cell piece
WO2020034474A1 (en) * 2018-08-13 2020-02-20 苏州迈为科技股份有限公司 Method for preparing aspect-ratio conductive wire based on solar cell panel
CN111403490A (en) * 2018-12-28 2020-07-10 泰州隆基乐叶光伏科技有限公司 Preparation method of solar cell interconnection structure
CN111403490B (en) * 2018-12-28 2022-09-13 泰州隆基乐叶光伏科技有限公司 Preparation method of solar cell interconnection structure

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