CN113611754A - Solar cell, method for manufacturing solar cell, and photovoltaic module - Google Patents

Solar cell, method for manufacturing solar cell, and photovoltaic module Download PDF

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Publication number
CN113611754A
CN113611754A CN202110874638.8A CN202110874638A CN113611754A CN 113611754 A CN113611754 A CN 113611754A CN 202110874638 A CN202110874638 A CN 202110874638A CN 113611754 A CN113611754 A CN 113611754A
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solar cell
antireflection film
cell sheet
thickness
film
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李婷婷
陶武松
戚培东
李辉
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Zhejiang Jinko Solar Co Ltd
Jinko Solar Co Ltd
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Zhejiang Jinko Solar Co Ltd
Jinko Solar Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02167—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/02168—Coatings for devices characterised by at least one potential jump barrier or surface barrier for solar cells the coatings being antireflective or having enhancing optical properties for the solar cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/042—PV modules or arrays of single PV cells
    • H01L31/048—Encapsulation of modules
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/186—Particular post-treatment for the devices, e.g. annealing, impurity gettering, short-circuit elimination, recrystallisation
    • H01L31/1868—Passivation
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Photovoltaic Devices (AREA)

Abstract

The embodiment of the application relates to the photovoltaic field, and provides a solar cell, a manufacturing method of the solar cell and a photovoltaic module, wherein the solar cell comprises: an initial solar cell sheet including a middle region and an edge region surrounding the middle region, the initial solar cell sheet including a substrate, an emitter layer and a passivation layer sequentially stacked; the antireflection film is positioned on the surface of the passivation layer, and the thickness of the antireflection film positioned in the middle area is smaller than that of the antireflection film positioned in the edge area in the direction perpendicular to the surface of the passivation layer; in the direction perpendicular to the surface of the passivation layer, the sum of the thicknesses of the initial solar cell sheet and the antireflection film in the middle area is smaller than or equal to the sum of the thicknesses of the initial solar cell sheet and the antireflection film in the edge area, so that the performance of the solar cell sheet can be at least improved.

Description

Solar cell, method for manufacturing solar cell, and photovoltaic module
Technical Field
The embodiment of the application relates to the field of photovoltaics, in particular to a solar cell, a manufacturing method of the solar cell and a photovoltaic module.
Background
With the continuous reduction of fossil energy and the continuous aggravation of environmental pollution, the research and development, popularization and application of new energy are highly concerned. Among them, solar energy is one of new energy sources, and its advantages such as abundance and cleanness make it most likely to become the leading factor of new energy sources. Currently, among the numerous kinds of solar cells, a crystalline silicon solar cell has become dominant.
The thickness of the edge region of the solar cell formed in the prior art is small, and the thickness of the edge region is small, so that the edge region of the solar cell is easily influenced by process stress in a subsequent process of forming a photovoltaic module, the edge region of the solar cell is hidden and cracked, and the performance of the solar cell is seriously influenced.
How to increase the thickness of the edge region of the solar cell becomes a technical problem that needs to be solved by those skilled in the art.
Disclosure of Invention
The embodiment of the application provides a solar cell, a forming method of the solar cell and a photovoltaic module, which are at least beneficial to solving the problem that the edge area of the solar cell is easy to crack.
According to some embodiments of the present application, in one aspect, there is provided a solar cell, including: an initial solar cell sheet including a middle region and an edge region surrounding the middle region, the initial solar cell sheet including a substrate, an emitter layer and a passivation layer sequentially stacked; the antireflection film is positioned on the surface of the passivation layer, and the thickness of the antireflection film positioned in the middle area is smaller than that of the antireflection film positioned in the edge area in the direction perpendicular to the surface of the passivation layer; in the direction perpendicular to the surface of the passivation layer, the sum of the thicknesses of the initial solar cell sheet and the antireflection film in the middle area is smaller than or equal to the sum of the thicknesses of the initial solar cell sheet and the antireflection film in the edge area.
In addition, the antireflection film includes a first antireflection film and a second antireflection film stacked in this order, and the thickness of the first antireflection film located in the middle area is the same as the thickness of the first antireflection film located in the edge area.
In addition, the second antireflection film is located on the first antireflection film surface of the edge region.
In addition, the second antireflection film is positioned on the whole surface of the first antireflection film, and in the direction perpendicular to the surface of the passivation layer, the thickness of the second antireflection film positioned in the edge region is greater than that of the second antireflection film positioned in the middle region.
In addition, the material of the first antireflection film and the material of the second antireflection film are the same.
In addition, the thickness of the second antireflection film in the edge area is 3-10 micrometers in the direction perpendicular to the surface of the passivation layer.
In addition, in the direction perpendicular to the surface of the passivation layer, the thickness of the initial solar cell sheet in the middle region is larger than that of the initial solar cell sheet in the edge region.
In addition, the width of the edge region is 1-4 mm in the direction perpendicular to the side wall of the initial solar cell piece.
According to some embodiments of the present application, another aspect of the embodiments of the present application provides a method for manufacturing a solar cell, including: forming an initial solar cell sheet including a middle region and an edge region surrounding the middle region, the initial solar cell sheet including a substrate, an emitter layer and a passivation layer sequentially stacked; performing film forming treatment, forming an antireflection film on the surface of the passivation layer, wherein in the direction perpendicular to the surface of the passivation layer, the thickness of the antireflection film in the middle area is smaller than that of the antireflection film in the edge area; in the direction perpendicular to the surface of the passivation layer, the sum of the thicknesses of the initial solar cell sheet and the antireflection film in the middle area is smaller than or equal to the sum of the thicknesses of the initial solar cell sheet and the antireflection film in the edge area.
In addition, the film formation process includes a first film formation process and a second film formation process: forming a first antireflection film on the surface of the passivation layer in the first film forming treatment stage; and forming a second antireflection film on the surface of the first antireflection film in the second film forming treatment stage, wherein the second antireflection film and the first antireflection film form the antireflection film.
In addition, the method of forming the second antireflection film includes: forming the second antireflection film on the surface of the first antireflection film located in the edge region.
In addition, the method of forming the second antireflection film includes: forming an initial second antireflection film on the whole surface of the first antireflection film; and removing the initial second antireflection film in the middle area, wherein the residual initial second antireflection film in the edge area is used as the second antireflection film.
In addition, the method of forming the second antireflection film includes: and forming the second antireflection film on the whole surface of the first antireflection film, wherein the thickness of the second antireflection film positioned in the edge area is greater than that of the second antireflection film positioned in the middle area in the direction perpendicular to the surface of the passivation layer.
In addition, after the substrate and the emitter layer are formed, edge removing processing is carried out to remove part of the emitter layer in the edge area; in the direction perpendicular to the surface of the passivation layer, the thickness of the middle area of the initial solar cell piece is larger than that of the edge area.
According to some embodiments of the present application, there is provided a photovoltaic module including: a plurality of solar cells according to any one of the above; the cover plates are positioned on two opposite sides of the solar cell; and the adhesive film layer is positioned between the solar cell and the cover plate.
The technical scheme provided by the embodiment of the application has at least the following advantages:
according to the solar cell provided by the embodiment of the application, as the thickness of the antireflection film positioned in the middle area is smaller than that of the antireflection film positioned in the edge area, the sum of the thicknesses of the initial solar cell positioned in the middle area and the antireflection film is smaller than or equal to the sum of the thicknesses of the initial solar cell positioned in the edge area and the antireflection film, so that the thickness of the edge area of the solar cell is thicker, the strength of the edge area of the solar cell is improved, and the phenomenon of fragment breakage or hidden crack of the edge area of the solar cell can be effectively avoided in the subsequent process; the solar cell has the advantages that the edge area of the solar cell is thickened, the antireflection film which is beneficial to reducing the illumination reflectivity is formed, the thickness of the edge area is increased, meanwhile, an additional manufacturing process is not added, and the process cost is beneficial to saving.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments or the conventional technologies of the present application, the drawings used in the descriptions of the embodiments or the conventional technologies will be briefly introduced below, it is obvious that the drawings in the following descriptions are only some embodiments of the present application, and for those skilled in the art, other drawings can be obtained according to the drawings without creative efforts.
FIG. 1 is a schematic structural diagram of a solar cell;
fig. 2 is a schematic structural diagram of a solar cell provided in an embodiment of the present application;
fig. 3 is a top view of a solar cell provided in an embodiment of the present application;
fig. 4 is a schematic structural diagram of a solar cell provided in another embodiment of the present application;
fig. 5 is a schematic structural diagram of a solar cell provided in another embodiment of the present application;
fig. 6 is a schematic structural diagram of a solar cell provided in another embodiment of the present application;
fig. 7 to 13 are schematic structural diagrams corresponding to steps of a method for manufacturing a solar cell according to yet another embodiment of the present application;
fig. 14 is a schematic structural diagram of a photovoltaic module according to another embodiment of the present application.
Detailed Description
As can be seen from the background art, the edge region of a solar cell has a low intensity.
And counting the data of the poor production of the solar cell, and finding out the main poor reason of the solar cell due to the breakage or hidden cracking. Through data analysis, 90% of starting points of the broken pieces or the hidden cracks of the solar cell pieces are concentrated on the edge regions of the solar cell pieces.
Fig. 1 is a schematic structural diagram of a solar cell.
A method of fabricating a solar cell structure will now be described in detail. A method of fabricating a solar cell structure, comprising: providing an initial solar cell piece 100, wherein the initial solar cell piece 100 comprises a middle region B and an edge region A surrounding the middle region B, the initial solar cell piece 100 comprises a substrate 101, an emitter layer 102 and a passivation layer 103 which are sequentially stacked, and the thickness of the initial solar cell piece 100 in the middle region B is larger than that of the initial solar cell piece 100 in the edge region A in a direction perpendicular to the surface of the passivation layer 103; performing film forming treatment to form an antireflection film 104 on the surface of the passivation layer 103, wherein the thickness of the antireflection film 104 in the middle area B is the same as that of the antireflection film 104 in the edge area a in the direction perpendicular to the surface of the passivation layer 103; in a direction perpendicular to the surface of the passivation layer 103, the sum of the thicknesses of the initial solar cell sheet 100 and the anti-reflection film 104 located in the middle region B is greater than the sum of the thicknesses of the initial solar cell sheet 100 and the anti-reflection film 104 located in the edge region a.
In the manufacturing process of the solar cell, the formed emitter layer 102 comprises a glass layer, the glass layer is located on the surface of the solar cell, in order to avoid the phenomenon of short circuit occurring in the edge area a of the solar cell to affect the performance of the solar cell and the components thereof, the glass layer located in the edge area a must be removed by adopting an edge removing process, the thickness of the edge area a of the solar cell is reduced by the treatment process, so that the thickness of the edge area a of the solar cell is lower than that of the middle area B of the solar cell, the edge area a of the solar cell is thinner, the strength is reduced, the capability in the aspect of crack resistance is weaker, and the risk of breakage or hidden cracking of the edge area a in the subsequent process is higher; and the thickness of the passivation layer 103 and the antireflection film 104 formed after the edging process is uniform on the whole emitter layer 103, which cannot improve the situation that the thickness of the edge area a of the solar cell is small.
According to the solar cell, the thickness of the antireflection film in the middle area is smaller than that of the antireflection film in the edge area, so that the thickness of the initial solar cell in the middle area and the thickness of the antireflection film in the edge area are smaller than or equal to the sum of the thicknesses of the initial solar cell in the edge area and the antireflection film in the edge area, the thickness of the edge area of the solar cell is thicker, the strength of the edge area of the solar cell is improved, and the phenomenon of fragment breakage or hidden cracking of the edge area of the solar cell can be effectively avoided in the subsequent process; the solar cell has the advantages that the edge area of the solar cell is thickened, the antireflection film which is beneficial to reducing the illumination reflectivity is formed, the thickness of the edge area is increased, meanwhile, an additional manufacturing process is not added, and the process cost is beneficial to saving.
Embodiments of the present application will be described in detail below with reference to the accompanying drawings. However, it will be appreciated by those of ordinary skill in the art that in the examples of the present application, numerous technical details are set forth in order to provide a better understanding of the present application. However, the technical solution claimed in the present application can be implemented without these technical details and various changes and modifications based on the following embodiments.
Fig. 2 is a schematic structural diagram of a solar cell provided in an embodiment of the present application.
Referring to fig. 2, a solar cell sheet includes: an initial solar cell sheet 200, wherein the initial solar cell sheet 200 comprises a middle region B and an edge region a surrounding the middle region B, and the initial solar cell sheet 200 comprises a substrate 201, an emitter layer 202 and a passivation layer 203 which are sequentially stacked; the antireflection film 204 is positioned on the surface of the passivation layer 203, and the thickness of the antireflection film 204 positioned in the middle area B is smaller than that of the antireflection film 204 positioned in the edge area A in the direction perpendicular to the surface of the passivation layer 203; in the direction perpendicular to the surface of the passivation layer 203, the sum of the thicknesses of the initial solar cell sheet 200 and the antireflection film 204 located in the middle region B is equal to or less than the sum of the thicknesses of the initial solar cell sheet 200 and the antireflection film 204 located in the edge region a.
Because the thickness of the antireflection film 204 positioned in the middle area B is smaller than that of the antireflection film 204 positioned in the edge area a, the sum of the thicknesses of the initial solar cell sheet 200 and the antireflection film 204 positioned in the middle area B and the thicknesses of the initial solar cell sheet 200 and the antireflection film 204 positioned in the edge area a is smaller than or equal to the sum of the thicknesses of the initial solar cell sheet 200 and the antireflection film 204 positioned in the edge area a, so that the thickness of the edge area a of the solar cell sheet is thicker, the strength of the edge area a of the solar cell sheet is improved, and the phenomena of breakage, hidden cracking and the like of the edge area a of the solar cell sheet can be effectively avoided in the subsequent process; meanwhile, the process of forming the antireflection layer 204 not only thickens the edge area a of the solar cell, but also forms the antireflection film 204 which is beneficial to reducing the illumination reflectivity, and the process cost is saved because no additional process is added while the thickness of the edge area a is increased.
In some embodiments, the solar cell may be a double-sided cell, and the opposite front and back sides of the double-sided cell are subjected to internal electronic transition under direct or indirect irradiation of sunlight to form a small current, and the small current is converged into a large current by the plurality of secondary grid lines and the main grid lines and then is output to the outside, so that light energy is converted into electric energy. In other embodiments, the solar cell is a single-sided cell, and the front surface of the solar cell is a light receiving surface and the back surface of the solar cell is a backlight surface.
Fig. 3 is a top view of a solar cell provided in an embodiment of the present application.
Referring to fig. 3, in some embodiments, the width of the edge region a in a direction perpendicular to the side wall of the initial solar cell sheet 200 is 1 mm to 4 mm, and specifically may be 2 mm or 3 mm. The width of the edge region a is within this range, and does not affect the structural configuration of the middle region B.
With continued reference to fig. 2, the substrate 201 may be a silicon wafer such as monocrystalline silicon, polycrystalline silicon, or quasi-monocrystalline silicon, and the quality of the silicon wafer directly determines the conversion efficiency of the solar cell. The surface types of the substrate 201 include: textured, polished or etched surfaces, and the like.
The substrate 201 is used for receiving sunlight and generating photogenerated carriers and comprises a front surface and a back surface which are oppositely arranged, and it is understood that when the solar cell is a double-sided cell, the front surface and the back surface of the substrate 201 can be surfaces for receiving incident sunlight. In other embodiments, when the solar cell is a single-sided cell, the front surface of the substrate is a light-receiving surface, and the back surface of the substrate is a backlight surface.
In some embodiments, the substrate 201 has an emitter layer 202 on the surface thereof, and the substrate 201 has a PN junction structure, if the intrinsic material of the substrate 201 is a P-type single crystal silicon layer, the emitter layer 202 is an N-type diffusion layer; if the intrinsic material of the substrate 201 is an N-type single crystal silicon layer, the emitter layer 202 is a P-type diffusion layer. A diffusion process may be used to form a doped layer on the surface of the substrate 201 as the emitter layer 202.
The diffusion treatment comprises a deposition stage and a propulsion stage, wherein the deposition stage provides a diffusion source for the substrate 201 at a high temperature, and the deposition time is 6-8 minutes; and stopping introducing the boron source in the propulsion stage, maintaining the temperature of the reaction chamber, and carrying out constant-temperature propulsion after the temperature is stable, wherein the time of the propulsion stage is 8-12 minutes.
In some embodiments, the thickness of the initial solar cell sheet 200 located in the middle region B is greater than the thickness of the initial solar cell sheet 200 located in the edge region a in a direction perpendicular to the surface of the passivation layer 203.
The reason is that in the manufacturing process of the solar cell, the formed emitter layer 202 includes a glass layer, and the glass layer is located on the surface of the solar cell, so as to avoid the short circuit phenomenon occurring in the edge area a of the solar cell to affect the performance of the solar cell and the components thereof, the glass layer located in the edge area a must be removed by an edge removing process before passivation treatment, and the treatment process can thin the thickness of the edge area a of the solar cell, so that the thickness of the edge area a of the solar cell is lower than that of the middle area B of the solar cell, and the edge area a of the solar cell is thinner.
In other embodiments, the thickness of the initial solar cell sheet 200 located in the middle region B may also be the same as the thickness of the initial solar cell sheet 200 in the edge region a in a direction perpendicular to the surface of the passivation layer 203.
In some embodiments, passivation is used to form the passivation layer 203, specifically: providing a passivation source to the emitter layer 202, wherein the passivation source reacts with oxygen atoms to form an oxygen-containing compound, the oxygen-containing compound forms a passivation layer 203, and the passivation layer 203 is a part of a passivation structure of a subsequently formed solar cell; the passivation source may be a gallium source or a molybdenum source and the oxygen-containing compound formed is gallium oxide or molybdenum oxide.
In some embodiments, the temperature of the reaction chamber for the passivation process may also be equal to the temperature of the reaction chamber for the diffusion process. The passivation process may be continued as a push-in phase, and the temperature of the reaction chamber may not be changed, so that the push-in phase continues to form a better quality emitter layer 202.
In some embodiments, anti-reflective film 204 is formed using a plasma enhanced chemical vapor deposition process. In other embodiments, physical vapor deposition may also be used to form the antireflection film.
In some embodiments, hydrogen atoms may be doped into the anti-reflective film 204, and then an annealing process may be performed at a high temperature and high light, in which the hydrogen atoms diffuse toward the surface of the solar cell, and the hydrogen atoms located in the anti-reflective film 204 may not only enhance the anti-reflection performance of the anti-reflective film 204, but also passivate other defects of the solar cell after diffusion.
In some embodiments, the passivation layer 203 is a part of a passivation structure of a subsequently formed solar cell, and the material of the passivation layer 203 may be gallium oxide or molybdenum oxide; the antireflection film 204 may also be a part of a passivation structure of the solar cell, the antireflection film 204 and the passivation layer 203 form the passivation structure of the solar cell, and the passivation structure has a passivation protection effect on the solar cell, and the material of the antireflection film 204 may be silicon nitride or silicon oxynitride.
Specifically, in some embodiments, referring to fig. 2, a solar cell is provided, including: the substrate 201, the material of the substrate 201 can be monocrystalline silicon, polycrystalline silicon or silicon-like wafers; an emitter layer 202 is provided on the substrate 201, and the material of the emitter layer 202 may be an N-type diffusion layer or a P-type diffusion layer; a passivation layer 203 is arranged on the emitter layer 202, and the material of the passivation layer 203 can be gallium oxide or molybdenum oxide; an antireflection film 204 is arranged on the passivation layer 203, the material of the antireflection film 204 may be silicon nitride or silicon oxynitride, the passivation layer 203 is a part of a passivation structure of a solar cell to be formed subsequently, the antireflection film 204 is also a part of the passivation structure of the solar cell, and the antireflection film 204 and the passivation layer 203 together form the passivation structure of the solar cell.
Fig. 4 is a schematic structural diagram of a solar cell provided in another embodiment of the present application; fig. 5 is a schematic structural diagram of a solar cell provided in another embodiment of the present application; fig. 6 is a schematic structural diagram of a solar cell according to another embodiment of the present application.
In other embodiments, referring to fig. 4-6, antireflection film 204 includes a first antireflection film 214 and a second antireflection film 224 stacked in sequence.
The first antireflection film 214 is a film layer that conventionally performs an antireflection function, and the second antireflection film 224 is formed more accurately according to the condition that the edge area a needs to be thickened, so as to increase the thickness of the edge area a, thereby increasing the strength of the edge area a.
The first antireflection film 214 and the second antireflection film 224 are made of the same material, and may be specifically silicon nitride or silicon oxynitride, which is beneficial to simplifying the formation process, and the two film forming processes are completed without replacing the reaction source, and the first antireflection film 214 and the second antireflection film 223 are made of the same material, so that the contact surfaces of the two antireflection films have better adhesiveness and are not easy to fall off. In other embodiments, the material of the first antireflection film may also be different from the material of the second antireflection film, the material of the first antireflection film is silicon nitride, the material of the second antireflection film is silicon oxynitride, and the difference between the material of the first antireflection film and the material of the second antireflection film does not affect the passivation effect and the antireflection effect of the antireflection film.
Referring to fig. 4, the thickness of the first anti-reflection film 214 located at the middle region B is the same as the thickness of the first anti-reflection film 214 located at the edge region a. Therefore, the first antireflection film 214 does not change the thickness difference between the edge area a and the middle area B, and only the first antireflection film 214 with antireflection function is formed, so that the subsequent process for forming the second antireflection film 224 only considers the thickness difference between the edge area a and the middle area B.
Specifically, the second antireflection film 224 is located on the surface of the first antireflection film 214 in the edge area a.
Forming the second anti-reflective film 224 only in the edge area a by controlling the reaction area; since the first anti-reflective film 214 has been formed on the entire surface of the passivation layer 203 and the entire solar cell has anti-reflective properties, the second anti-reflective film 224 only increases the thickness of the edge region a, thereby increasing the strength of the edge region a and reducing the process cost.
The thickness of the second anti-reflective film 224 located at the edge area a in a direction perpendicular to the surface of the passivation layer 203 is 3 micrometers to 10 micrometers, and specifically, may be 5 micrometers, 7 micrometers, or 9 micrometers. The thickness of the second antireflection film 224 within the above range does not cause unevenness of the surface of the solar cell due to excessive thickness of the second antireflection film 224 while thickening the edge region a of the solar cell.
In other embodiments, referring to fig. 5, the second anti-reflective film 224 is positioned on the entire surface of the first anti-reflective film 214, and the thickness of the second anti-reflective film 224 positioned at the edge region a is greater than that of the second anti-reflective film 224 positioned at the middle region B in a direction perpendicular to the surface of the passivation layer 203.
The second antireflection film 224 is positioned on the entire surface of the first antireflection film 214, thereby avoiding a process of controlling the reaction range only when the second antireflection film 224 is formed in the edge region a; the purpose of forming the second antireflection film 224 with different film thicknesses in different areas is achieved by controlling the amount of the reaction source in different areas.
In another embodiment, referring to fig. 6, the thickness of the first antireflection film 214 located at the middle region B is the same as the thickness of the first antireflection film 214 located at the edge region a; the second anti-reflective film 224 is positioned on the surface of the first anti-reflective film 214 in the edge region a, and the upper surface of the second anti-reflective film 224 is higher than the upper surface of the first anti-reflective film 214 in the middle region B.
The upper surface of the second antireflection film 224 is higher than the upper surface of the first antireflection film 214 located in the middle region B; the second antireflection film 224 not only makes up for the thickness of the edge region a originally lower than the middle region B, but also exceeds the middle region B, thereby further enhancing the strength of the edge region a which is easy to break or crack.
The thickness of the upper surface of the second antireflection film 224 higher than the upper surface of the first antireflection film 214 in the middle region B is 1 mm to 2 mm, and the higher thickness is within the above range, so that the surface unevenness of the solar cell due to the excessive thickness of the second antireflection film 224 is avoided while the edge region a of the solar cell is thickened.
In the solar cell provided by some embodiments, since the thickness of the antireflection film 204 located in the middle region B is smaller than the thickness of the antireflection film 204 located in the edge region a, the sum of the thicknesses of the initial solar cell 200 and the antireflection film 204 located in the middle region B is less than or equal to the sum of the thicknesses of the initial solar cell 200 and the antireflection film 204 located in the edge region a, so that the thickness of the edge region a of the solar cell is thicker, the strength of the edge region a of the solar cell is improved, and in a subsequent process, the edge region a of the solar cell can be effectively prevented from being broken or crazed; the edge area A of the solar cell is thickened, the antireflection film 204 which is beneficial to reducing the illumination reflectivity is formed, the thickness of the edge area A is increased, an additional processing procedure is not added, and the process cost is beneficial to saving.
Another embodiment of the present application provides a method for manufacturing a solar cell corresponding to the above solar cell, and the method for manufacturing a solar cell according to another embodiment of the present application will be described in detail below with reference to the accompanying drawings.
Fig. 7 to 13 are schematic structural diagrams corresponding to steps of a method for manufacturing a solar cell according to an embodiment of the present application.
In some embodiments, referring to fig. 7, an initial solar cell sheet 300 is formed, the initial solar cell sheet 300 including a middle region B and an edge region a surrounding the middle region B, the initial solar cell sheet 300 including a substrate 301, an emitter layer 302, and a passivation layer 303 sequentially stacked.
In some embodiments, the solar cell may be a double-sided cell, and the opposite front and back sides of the double-sided cell are subjected to internal electronic transition under direct or indirect irradiation of sunlight to form a small current, and the small current is converged into a large current by the plurality of secondary grid lines and the main grid lines and then is output to the outside, so that light energy is converted into electric energy. In other embodiments, the solar cell is a single-sided cell, and the front surface of the solar cell is a light receiving surface and the back surface of the solar cell is a backlight surface.
In some embodiments, the width of the edge region a in a direction perpendicular to the sidewall of the initial solar cell sheet 300 is 1 mm to 4 mm, and specifically may be 2 mm or 3 mm. The width of the edge region a is within this range, and does not affect the structural configuration of the middle region B.
The substrate 301 may be made of monocrystalline silicon, polycrystalline silicon, or monocrystalline-like silicon, and the quality of the silicon directly determines the conversion efficiency of the solar cell. The surface types of the substrate 301 include: textured, polished or etched surfaces, and the like.
The substrate 301 is used for receiving sunlight and generating photogenerated carriers and comprises a front surface and a back surface which are oppositely arranged, and it is understood that when the solar cell is a double-sided cell, the front surface and the back surface of the substrate 301 can be surfaces for receiving incident sunlight. In other embodiments, when the solar cell is a single-sided cell, the front surface of the substrate is a light-receiving surface, and the back surface of the substrate is a backlight surface.
In some embodiments, the substrate 301 has an emitter layer 302 on its surface, and the substrate 201 has a PN junction structure, if the intrinsic material of the substrate 301 is a P-type single crystal silicon layer, the emitter layer 302 is an N-type diffusion layer; if the intrinsic material of the substrate 301 is an N-type single crystal silicon layer, the emitter layer 302 is a P-type diffusion layer.
In some embodiments, the substrate 301 is subjected to a diffusion process to form a doped layer on the surface of the substrate 301 as the emitter layer 302.
The diffusion treatment comprises a deposition stage and a propulsion stage, wherein the deposition stage provides a diffusion source for the substrate 301 at a high temperature, and the deposition time is 6-8 minutes; and stopping introducing the boron source in the propulsion stage, maintaining the temperature of the reaction chamber, and carrying out constant-temperature propulsion after the temperature is stable, wherein the time of the propulsion stage is 8-12 minutes.
After the emitter layer 302 is formed, passivation treatment is performed to provide a passivation source for the emitter layer 302, the passivation source reacts with oxygen atoms to form an oxygen-containing compound, the oxygen-containing compound forms a passivation layer 303, and the passivation layer 303 is a part of a passivation structure of a subsequently formed solar cell; the passivation source may be a gallium source or a molybdenum source and the oxygen-containing compound formed is gallium oxide or molybdenum oxide.
In some embodiments, the temperature of the reaction chamber for the passivation process may also be equal to the temperature of the reaction chamber for the diffusion process. The passivation process may be continued as a push-in phase, and the temperature of the reaction chamber may not be changed, so that the push-in phase continues to form a better quality emitter layer 302.
In some embodiments, after forming the substrate 301 and the emitter layer 302, a de-edging process is performed to remove a portion of the emitter layer 302 located in the edge area a; the thickness of the initial solar cell sheet 300 in the middle region B is formed to be greater than the thickness of the edge region a in a direction perpendicular to the surface of the passivation layer 303. The reason is that in the formation process of the solar cell, the formed emitter layer 302 includes a glass layer, and the glass layer is located on the surface of the solar cell, so as to avoid the short circuit phenomenon occurring in the edge area a of the solar cell to affect the performance of the solar cell and the components thereof, the glass layer located in the edge area a must be removed by an edge removing process before passivation treatment, and the treatment process can thin the thickness of the edge area a of the solar cell, so that the thickness of the edge area a of the solar cell is lower than that of the middle area B of the solar cell, and the edge area a of the solar cell is thinner.
In other embodiments, the thickness of the initial solar cell sheet 300 located in the middle region B may also be the same as the thickness of the initial solar cell sheet 300 in the edge region a in a direction perpendicular to the surface of the passivation layer 303.
In some embodiments, referring to fig. 8, after forming the passivation layer 303, a film forming process 310 is performed to form an anti-reflective film 304 on the surface of the passivation layer 303, wherein the anti-reflective film 304 in the middle region B has a thickness smaller than that of the anti-reflective film 304 in the edge region a in a direction perpendicular to the surface of the passivation layer 303; in the direction perpendicular to the surface of the passivation layer 303, the sum of the thicknesses of the initial solar cell 300 and the antireflection film 304 located in the middle region B is equal to or less than the sum of the thicknesses of the initial solar cell 300 and the antireflection film 304 located in the edge region a.
Because the thickness of the antireflection film 304 positioned in the middle area B is smaller than that of the antireflection film 304 positioned in the edge area a, the sum of the thicknesses of the initial solar cell 300 and the antireflection film 304 positioned in the middle area B is smaller than or equal to the sum of the thicknesses of the initial solar cell 300 and the antireflection film 304 positioned in the edge area a, so that the thickness of the edge area a of the solar cell is thicker, the strength of the edge area a of the solar cell is improved, and the phenomena of breakage, hidden cracking and the like of the edge area a of the solar cell can be effectively avoided in the subsequent process; meanwhile, the film forming process 310 not only thickens the edge area a of the solar cell, but also forms the antireflection film 304 which is beneficial to reducing the illumination reflectivity, so that the thickness of the edge area a is increased without adding an additional process, and the process cost is beneficial to saving.
In some embodiments, the anti-reflective film 304 is formed by a plasma enhanced chemical vapor deposition process, and the material of the anti-reflective film 304 may be silicon nitride or silicon oxynitride. In other embodiments, physical vapor deposition may also be used to form the antireflection film.
In some embodiments, hydrogen atoms may be doped into the anti-reflective film 304, and then an annealing process may be performed at a high temperature and high light, in which the hydrogen atoms are diffused toward the surface of the solar cell, and the hydrogen atoms located in the anti-reflective film 304 may not only enhance the anti-reflection performance of the anti-reflective film 304, but also passivate other defects of the solar cell after diffusion.
And finally, printing electrode silver paste on the front surface and the back surface of the substrate 301 by using a screen printing device, and sintering to prepare the silicon crystal solar cell.
In other embodiments, referring to fig. 9 to 13, the film formation process 310 (refer to fig. 8) includes a first film formation process 320 and a second film formation process 330: forming a first antireflection film 314 on the surface of the passivation layer 303 in the first film forming process 320; in the second film formation process 330, a second antireflection film 324 is formed on the surface of the first antireflection film 314, and the second antireflection film 324 and the first antireflection film 314 form the antireflection film 304.
The first antireflection film 314 which conventionally plays a role in antireflection is formed through the first film forming process 320, and then the second film forming process 320 is performed according to the condition that the edge area a needs to be thickened, so that the second antireflection film 324 can be formed more accurately to improve the thickness of the edge area a, and further the strength of the edge area a is improved.
The materials of the formed first antireflection film 314 and the second antireflection film 324 are the same, so that the manufacturing process is facilitated to be simplified, two film forming processes are completed under the condition that a reaction source is not replaced, the materials of the first antireflection film 314 and the second antireflection film 323 are the same, the contact surfaces of the two antireflection films are better in adhesiveness, and the antireflection films are not easy to fall off. In other embodiments, the material of the first antireflection film may also be different from the material of the second antireflection film.
Referring to fig. 9, the thickness of the first anti-reflection film 314 located at the middle region B is the same as the thickness of the first anti-reflection film 314 located at the edge region B. Therefore, the first film forming process 320 does not change the thickness difference between the edge area a and the middle area B, and only the first anti-reflective film 314 having anti-reflective effect is formed, so that the subsequent second film forming process can conveniently consider the thickness difference between the edge area a and the middle area B.
Specifically, referring to fig. 10, the method of forming the second anti-reflection film 324 includes: a second antireflection film 324 is formed on the surface of the first antireflection film 314 located in the edge area a.
Forming a second anti-reflection film 324 only in the edge area a by controlling the reaction area by using a chemical vapor deposition process; since the first anti-reflection film 314 has been formed on the entire surface of the passivation layer 303 and the entire solar cell has anti-reflection performance, the second anti-reflection film 324 only increases the thickness of the edge region a, and reduces the process cost while enhancing the strength of the edge region a.
The thickness of the second anti-reflection film 324 at the edge region a in a direction perpendicular to the surface of the passivation layer 303 is 3 micrometers to 10 micrometers, and specifically, may be 5 micrometers, 7 micrometers, or 9 micrometers. The thickness of the second antireflection film 324 within the above range can increase the thickness of the edge area a of the solar cell without causing unevenness of the surface of the solar cell due to the excessive thickness of the second antireflection film 324.
In other embodiments, referring to fig. 11, the method of forming the second anti-reflective film 324 further includes: the second anti-reflection film 324 is formed on the entire surface of the first anti-reflection film 314, and the thickness of the second anti-reflection film 324 at the edge region a is greater than that of the second anti-reflection film 324 at the middle region B in a direction perpendicular to the surface of the passivation layer 303.
The second antireflection film 324 is formed on the whole surface of the first antireflection film 314 by adopting a chemical vapor deposition process, so that the process of controlling the reaction range only when the second antireflection film 324 is formed in the edge area A is avoided; the purpose of forming the second antireflection film 324 with different film thicknesses in different areas is achieved by controlling the amount of the reaction source in different areas. In other embodiments, the second anti-reflective film may also be formed using a physical vapor deposition process.
In other embodiments, the method of forming the second anti-reflective film 324 further includes: referring to fig. 12, an initial second anti-reflective film 334 is formed on the entire surface of the first anti-reflective film 314.
The initial second anti-reflective film 334 is formed on the entire surface of the first anti-reflective film 324 regardless of the reaction ranges and the amounts of the reaction sources in the different ranges, and the manufacturing process is simplified, and the process steps for forming the initial second anti-reflective film 334 are the same as those for forming the first anti-reflective film 314.
Referring to fig. 13, the initial second anti-reflective film 334 (refer to fig. 12) located at the middle region B is removed, and the remaining initial second anti-reflective film 334 located at the edge region a serves as the second anti-reflective film 324.
The initial second antireflection film 334 located in the middle region B is removed by the etching process 340, and after the initial second antireflection film 334 is formed, the thickness of the solar cell piece in the edge region a is smaller than that of the solar cell piece in the middle region B, so that the etching process 340 is favorable for enabling the thickness of the solar cell piece in the edge region a to be larger than that of the solar cell piece in the middle region B, the strength of the edge region a of the solar cell piece is improved, and the edge region a of the solar cell piece is effectively prevented from being broken or hidden cracked in the subsequent process.
According to the manufacturing method of the solar cell provided by some embodiments, a film forming process 310 is performed on the surface of an initial solar cell 300, and an antireflection film 304 is formed on the surface of a passivation layer 303; because the thickness of the antireflection film 304 positioned in the middle area B is smaller than that of the antireflection film 304 positioned in the edge area a, the sum of the thicknesses of the initial solar cell 300 and the antireflection film 304 positioned in the middle area B is smaller than or equal to the sum of the thicknesses of the initial solar cell 300 and the antireflection film 304 positioned in the edge area a, so that the thickness of the edge area a of the solar cell is thicker, the strength of the edge area a of the solar cell is improved, and the edge area a of the solar cell can be effectively prevented from being broken or hidden cracked in the subsequent process; meanwhile, the film forming process 310 not only thickens the edge area a of the solar cell, but also forms the antireflection film 304 which is beneficial to reducing the illumination reflectivity, so that the thickness of the edge area a is increased without adding an additional process, and the process cost is beneficial to saving.
Fig. 14 is a schematic structural diagram of a photovoltaic module according to still another embodiment of the present disclosure.
Referring to fig. 14, another embodiment of the present application further provides a photovoltaic module, including: a plurality of solar cells 401 provided in the above embodiments; the cover plates are positioned on two opposite sides of the solar cell 401; and the adhesive film layer is positioned between the solar cell 401 and the cover plate.
Since the solar cell 401 in the photovoltaic module provided in some embodiments is the same as the above-described embodiments, the solar cell 401 in some embodiments includes an anti-reflective layer on a passivation layer, and the sum of the thicknesses of the initial solar cell and the anti-reflective film in the middle region is equal to or less than the sum of the thicknesses of the initial solar cell and the anti-reflective film in the edge region.
The thickness of the edge area of the solar cell is thicker, the strength of the edge area of the solar cell is improved, and the edge area of the solar cell can be effectively prevented from being broken or hidden cracked in the subsequent process; the solar cell has the advantages that the edge area of the solar cell is thickened, the antireflection film which is beneficial to reducing the illumination reflectivity is formed, the thickness of the edge area is increased, meanwhile, an additional manufacturing process is not added, and the process cost is beneficial to saving.
In some embodiments, a plurality of solar cells 401 may be formed into a cell string 410 by solder strips 402, and subsequently formed cover plates and adhesive films are disposed on both sides of the cell string 410.
In some embodiments, the cover plate comprises a front plate 405 and a back plate 406, the front plate 405 is a cover plate close to the sunny side of the photovoltaic module, the back plate 406 is a cover plate far from the sunny side, and the cover plate plays a role of protecting and supporting the photovoltaic module; the photovoltaic module further includes: and the lead is electrically connected with at least one solar cell 401 in the cell string 410, and is electrically connected with the junction box through the lead solar cell 401.
The adhesive film layer includes a first adhesive film layer 403 and a second adhesive film layer 404, the first adhesive film layer 403 is located between the front plate 405 and the battery string 410, and the second adhesive film layer 404 is located between the back plate 406 and the battery string 410.
The glue film layer is made of an EVA (Polyethylene vinyl acetate) glue film layer or a POE (Polyoxyethylene) glue film layer, and encapsulates the photovoltaic module, so that water molecules in the environment can be prevented from contacting the battery string 410, and power attenuation of the photovoltaic module is prevented.
Since the specific structure of the solar cell 401 of the photovoltaic module is the same as that of the solar cell in the above embodiment, the description of the above embodiment can be referred to for the rest of the deformation structures and effects, and details are not repeated here.
The embodiment of the invention provides a photovoltaic module, wherein the thickness of an antireflection film of a solar cell 401 in a middle area in the photovoltaic module is smaller than that of an antireflection film in an edge area, so that the sum of the thickness of an initial solar cell and the thickness of the antireflection film in the middle area is smaller than or equal to the sum of the thickness of the initial solar cell and the thickness of the antireflection film in the edge area, the thickness of the edge area of the solar cell 401 is thicker, the strength of the edge area of the solar cell 401 is improved, and the phenomenon of fragment breakage or hidden cracking of the edge area of the solar cell 401 can be effectively avoided in the subsequent process; the edge area of the solar cell 401 is thickened, an antireflection film beneficial to reducing the illumination reflectivity is formed, the thickness of the edge area is increased, an additional manufacturing process is not added, and the process cost is saved.
It will be understood by those of ordinary skill in the art that the foregoing embodiments are specific examples for carrying out the present application, and that various changes in form and details may be made therein without departing from the spirit and scope of the present application in practice. Various changes and modifications may be effected therein by one skilled in the art without departing from the spirit and scope of the application, and it is intended that the scope of the application be limited only by the claims appended hereto.

Claims (15)

1. A solar cell, comprising:
an initial solar cell sheet including a middle region and an edge region surrounding the middle region, the initial solar cell sheet including a substrate, an emitter layer and a passivation layer sequentially stacked;
the antireflection film is positioned on the surface of the passivation layer, and the thickness of the antireflection film positioned in the middle area is smaller than that of the antireflection film positioned in the edge area in the direction perpendicular to the surface of the passivation layer;
in the direction perpendicular to the surface of the passivation layer, the sum of the thicknesses of the initial solar cell sheet and the antireflection film in the middle area is smaller than or equal to the sum of the thicknesses of the initial solar cell sheet and the antireflection film in the edge area.
2. The solar cell sheet according to claim 1, wherein the antireflection film comprises a first antireflection film and a second antireflection film stacked in this order, and a thickness of the first antireflection film in the middle region is the same as a thickness of the first antireflection film in the edge region.
3. The solar cell sheet according to claim 2, wherein the second antireflection film is located on the surface of the first antireflection film in the edge region.
4. The solar cell sheet according to claim 2, wherein the second antireflection film is located on the entire surface of the first antireflection film, and the thickness of the second antireflection film located in the edge region is greater than the thickness of the second antireflection film located in the middle region in a direction perpendicular to the surface of the passivation layer.
5. The solar cell sheet according to claim 2, wherein the material of the first antireflection film and the material of the second antireflection film are the same.
6. The solar cell sheet according to claim 2, wherein the second antireflection film at the edge region has a thickness of 3 to 10 μm in a direction perpendicular to the surface of the passivation layer.
7. The solar cell sheet according to claim 1, wherein the thickness of the initial solar cell sheet in the middle region is greater than the thickness of the initial solar cell sheet in the edge region in a direction perpendicular to the surface of the passivation layer.
8. The solar cell sheet of claim 1, wherein the edge region has a width in a direction perpendicular to the initial solar cell sheet sidewall of 1 mm to 4 mm.
9. A method for manufacturing a solar cell, comprising:
forming an initial solar cell sheet including a middle region and an edge region surrounding the middle region, the initial solar cell sheet including a substrate, an emitter layer and a passivation layer sequentially stacked;
performing film forming treatment, forming an antireflection film on the surface of the passivation layer, wherein in the direction perpendicular to the surface of the passivation layer, the thickness of the antireflection film in the middle area is smaller than that of the antireflection film in the edge area;
in the direction perpendicular to the surface of the passivation layer, the sum of the thicknesses of the initial solar cell sheet and the antireflection film in the middle area is smaller than or equal to the sum of the thicknesses of the initial solar cell sheet and the antireflection film in the edge area.
10. The method of manufacturing a solar cell sheet according to claim 9, wherein the film formation process includes a first film formation process and a second film formation process: forming a first antireflection film on the surface of the passivation layer in the first film forming treatment stage; and forming a second antireflection film on the surface of the first antireflection film in the second film forming treatment stage, wherein the second antireflection film and the first antireflection film form the antireflection film.
11. The method for manufacturing a solar cell sheet according to claim 10, wherein the method for forming the second antireflection film comprises: forming the second antireflection film on the surface of the first antireflection film located in the edge region.
12. The method for manufacturing a solar cell sheet according to claim 10, wherein the method for forming the second antireflection film comprises: forming an initial second antireflection film on the whole surface of the first antireflection film; and removing the initial second antireflection film in the middle area, wherein the residual initial second antireflection film in the edge area is used as the second antireflection film.
13. The method for manufacturing a solar cell sheet according to claim 10, wherein the method for forming the second antireflection film comprises: and forming the second antireflection film on the whole surface of the first antireflection film, wherein the thickness of the second antireflection film positioned in the edge area is greater than that of the second antireflection film positioned in the middle area in the direction perpendicular to the surface of the passivation layer.
14. The method of manufacturing a solar cell sheet according to claim 9, wherein after the substrate and the emitter layer are formed, a trimming process is performed to remove a portion of the emitter layer located in the edge region; in the direction perpendicular to the surface of the passivation layer, the thickness of the middle area of the initial solar cell piece is larger than that of the edge area.
15. A photovoltaic module, comprising: a plurality of solar cells of any of claims 1-8;
the cover plates are positioned on two opposite sides of the solar cell;
and the adhesive film layer is positioned between the solar cell and the cover plate.
CN202110874638.8A 2021-07-30 2021-07-30 Solar cell, method for manufacturing solar cell, and photovoltaic module Pending CN113611754A (en)

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