CN113607152A - Three-axis micro-electromechanical gyroscope and preparation and packaging method thereof - Google Patents
Three-axis micro-electromechanical gyroscope and preparation and packaging method thereof Download PDFInfo
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- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5642—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating bars or beams
- G01C19/5656—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating bars or beams the devices involving a micromechanical structure
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- G01C19/00—Gyroscopes; Turn-sensitive devices using vibrating masses; Turn-sensitive devices without moving masses; Measuring angular rate using gyroscopic effects
- G01C19/56—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces
- G01C19/5642—Turn-sensitive devices using vibrating masses, e.g. vibratory angular rate sensors based on Coriolis forces using vibrating bars or beams
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Abstract
The invention belongs to the technical field of MEMS gyroscope sensor design and processing, and discloses a three-axis micro-electromechanical gyroscope and a preparation and packaging method thereof. The MEMS gyroscope is symmetrically designed by adopting four mass blocks, and is connected with the four mass blocks by adopting a rigid coupling frame, so that the three-axis sensing of the single-chip gyroscope is realized by the structure. The gyroscope adopts differential signal output, and can reduce and inhibit output errors caused by interference signals in external environment. The MEMS gyroscope detection mode is coupled through the rigid coupling frame, so that the influence of external interference signals on detection output can be further reduced, and the stability and reliability of the gyroscope are further improved. The invention adopts the through silicon via technology to realize the electrical interconnection of the device and the out-of-plane sensing of the device, and adopts the wafer level bonding method to realize the vacuum packaging of the device, which can reduce the difficulty of the design and the preparation of the device and realize the integration of the MEMS chip and the integrated circuit chip.
Description
Technical Field
The invention belongs to the technical field of MEMS gyroscope sensor design and processing, and particularly relates to a three-axis MEMS gyroscope and a preparation and packaging method thereof.
Background
The gyroscope is a sensing device for measuring the rotation angle or angular displacement of an object, is used for realizing the measurement of the attitude and the track of a motion carrier, and is a basic core device of an inertial system. The Micro Electro Mechanical System (MEMS) gyroscope has the advantages of low cost, small volume, low power consumption, and being capable of being integrated with a Complementary Metal Oxide Semiconductor (CMOS), and is widely applied to the fields of consumer electronics, medical electronics, automotive electronics, aerospace, military, and the like.
The common MEMS gyroscope generally realizes angular velocity sensing based on a Coriolis effect, a suspended movable microstructure is acted by Coriolis force when the suspended movable microstructure rotates, and the rotation angular velocity or angle applied by the outside is detected by measuring a Coriolis force signal. MEMS gyroscopes generally comprise a drive and detection module, which enables the measurement of angles or angular velocities in a single axial direction by coupling of drive and detection modes. At present, the structural design and processing of the single-axis MEMS gyroscope are developed, and the precision and the stability of the single-axis MEMS gyroscope reach a high level. At present, three MEMS accelerometers and three single-axis MEMS gyroscopes are generally combined into an Inertial Measurement Unit (IMU) to measure linear acceleration and angular velocity of a target object in three axis directions, and the attitude of the object is calculated by using the linear acceleration and the angular velocity. Since the IMU integrates a plurality of sensors, the volume, power consumption and packaging cost of the IMU are increasing, which restricts the application occasions thereof.
With the rapid development of the internet of things, the miniaturization is the development trend of future intelligent sensing equipment, the miniaturization of devices can realize the portability of the equipment, and the requirements of small size, low power consumption and multiple functions of the equipment are met. The monolithic integrated three-axis MEMS gyroscope has the advantages of small size, low power consumption and low cost, and the development of the monolithic integrated three-axis MEMS gyroscope is a future trend along with the market development and the driving of emerging industries. However, since the monolithic integrated three-axis MEMS gyroscope has a complicated structural design and insufficient precision and stability, it is limited in its wide application. How to improve the precision and stability of the triaxial MEMS gyroscope is a technical problem to be solved in the field.
Disclosure of Invention
Aiming at the current problem, the invention provides a three-axis micro-electromechanical gyroscope and a preparation and packaging method thereof, and aims to further optimize and improve the precision and stability of the MEMS gyroscope.
The invention provides a triaxial micro-electromechanical gyroscope, comprising from bottom to top: a substrate layer, a device layer and a cover plate layer;
the gyroscope body is located in the device layer and includes: the device comprises an anchor point, a coupling frame, a mass block, a driving unit, a first sensing unit, a first elastic beam, a second elastic beam and a third elastic beam;
the plane structure of the gyroscope main body is centrosymmetric along an X axis and a Y axis; the coupling frames comprise a first coupling frame positioned at the symmetrical center and four second coupling frames symmetrically distributed around the first coupling frame, the first coupling frame is of a structure shaped like a Chinese character 'jing', and the second coupling frames are of a structure shaped like a Chinese character 'Contraband'; the anchor point is positioned at the center of the first coupling frame and is connected with the first coupling frame through four first elastic beams, and the four first elastic beams are mutually perpendicular and form a cross structure; the four mass blocks are respectively positioned inside the four second coupling frames, the centers of two of the mass blocks are positioned on an X axis, the centers of the other two mass blocks are positioned on a Y axis, and the mass blocks are connected with the second coupling frames through the second elastic beams; the first coupling frame is connected with the second coupling frame through the third elastic beam;
two groups of driving units are symmetrically distributed on two sides of each mass block, the driving units are positioned in the second coupling frame, and the central points of the driving units are positioned on an X axis or a Y axis;
at least one group of first sensing units is distributed on the outer side of each mass block, and the first sensing units are positioned outside the second coupling frame;
at least one group of second sensing units are distributed on the surface of one side, close to the device layer, of the substrate layer or the cover plate layer, and the second sensing units are located right above or below each mass block.
Preferably, the driving working mode of the gyroscope is that the four mass blocks simultaneously perform in-plane oscillation motion along the central symmetry axis direction, the four mass blocks are simultaneously close to or simultaneously far away from the symmetry center of the whole plane structure of the gyroscope, and the four mass blocks in the driving working mode perform in-phase motion.
Preferably, the gyroscope has a first sensing mode, a second sensing mode and a third sensing mode;
when the gyroscope is in a driving working mode, if the angular velocity along the Z-axis direction is applied by the outside, the four mass blocks and the coupling frame simultaneously do torsional pendulum motion in an X-Y plane along the clockwise direction or the anticlockwise direction, the gyroscope is in the first sensing mode, and the information of the angular velocity along the Z-axis direction is detected through the first sensing unit; if an angular velocity along the X-axis direction is applied from the outside, the two mass blocks positioned on the Y axis do up-and-down torsional pendulum motion along the Z direction, the motion directions of the two mass blocks are opposite, the gyroscope is in the second sensing mode, and the angular velocity information in the Z-axis direction is detected through the second sensing units positioned right above or right below the two mass blocks on the Y axis; if the angular velocity along the Y-axis direction is applied from the outside, the two mass blocks located on the X-axis do vertical torsional pendulum motion along the Z-direction, the motion directions of the two mass blocks are opposite, the gyroscope is located in the third sensing mode, and the second sensing unit located right above or below the two mass blocks on the X-axis detects the angular velocity information along the Z-axis direction.
Preferably, two groups of the first sensing units are symmetrically distributed on two sides of each mass block; for each mass block, the first sensing unit is perpendicular to the driving unit corresponding to the mass block.
Preferably, when the gyroscope is in the first sensing mode, four groups of first sensing units located on one side of the four mass blocks in the clockwise direction of the X axis/Y axis adopt in-phase output, and four groups of first sensing units located on one side of the four mass blocks in the counterclockwise direction of the X axis/Y axis adopt anti-phase output, so as to realize differential output;
when the gyroscope is in the second induction mode, the second induction units which are positioned right above or right below the two mass blocks on the Y axis along the Z axis adopt differential output;
and when the gyroscope is in the third induction mode, the two mass blocks on the X axis adopt differential output along the second induction unit right above or below the Z axis.
Preferably, a group of the first sensing units is distributed on the outer side of each mass block; for each mass block, the first sensing unit is arranged in parallel with the driving unit corresponding to the mass block, and the first sensing unit is positioned on one side of the mass block, which is far away from the anchor point;
when the gyroscope is in the first induction mode, two groups of first induction units positioned outside two mass blocks on an X axis adopt in-phase output, and two groups of first induction units positioned outside two mass blocks on a Y axis adopt opposite-phase output, so that differential output is realized;
when the gyroscope is in the second induction mode, the second induction units which are positioned right above or right below the two mass blocks on the Y axis along the Z axis adopt differential output;
and when the gyroscope is in the third induction mode, the two mass blocks on the X axis adopt differential output along the second induction unit right above or below the Z axis.
Preferably, the driving unit includes a comb-tooth-shaped driving electrode and a comb-tooth-shaped driving detection electrode, and movable electrode plates in the driving electrode and the driving detection electrode are connected to the mass block; the first sensing unit comprises a comb-tooth-shaped sensing electrode, and a movable electrode plate in the first sensing unit is connected with the second coupling frame; the second sensing unit comprises a planar sensing electrode; the driving electrode and the driving detection electrode are comb-shaped electrodes with equal intervals, and the comb-shaped induction electrodes are comb-shaped electrodes with variable intervals.
Preferably, the first elastic beam is of a straight beam structure, the second elastic beam is of a combination of a folding beam and a U-shaped beam, and the third elastic beam is of a combination structure of two U-shaped beams.
On the other hand, the invention provides a preparation and packaging method of a three-axis micro-electromechanical gyroscope, which comprises the following steps:
step 1, etching a concave cavity structure with a support column on the front side of a substrate layer, and depositing a layer of oxide on the front side and the back side of the substrate layer;
step 2, aligning the back surface of the device layer with the front surface of the substrate layer, and directly bonding; carrying out patterning photoetching and etching on the device layer to obtain the structure of the gyroscope main body;
step 4, depositing a layer of polycrystalline silicon film on the front surface of the cover plate layer, and filling polycrystalline silicon in the silicon through hole;
and 7, thinning the back of the cover plate layer, leaking the silicon through holes filled with the polycrystalline silicon, depositing a layer of silicon oxide on the back of the cover plate layer, removing the silicon oxide in the corresponding area of the silicon through holes, depositing a metal layer on the back of the cover plate layer, and manufacturing the metal bonding pad.
Preferably, in step 1, after the cavity structure with the supporting pillars is etched on the front surface of the substrate layer, and before a layer of silicon oxide is deposited on the front surface and the back surface of the substrate layer, the method further includes: etching a silicon through hole structure at the bottom of the cavity structure of the supporting column;
after depositing a layer of silicon oxide on the front and back surfaces of the substrate layer, the method further comprises the following steps: depositing a layer of polycrystalline silicon film in the cavity structure of the supporting column of the substrate layer, and filling polycrystalline silicon in the silicon through hole; etching the polysilicon film to manufacture the planar induction electrode;
in the step 7, thinning the back surfaces of the substrate layer and the cover plate layer respectively, leaking the through holes filled with the polycrystalline silicon, depositing a layer of silicon oxide on the back surfaces of the substrate layer and the cover plate layer, and removing the silicon oxide in the area corresponding to the silicon through holes; and depositing a metal layer on the back surfaces of the substrate layer and the cover plate layer to manufacture a metal bonding pad.
One or more technical schemes provided by the invention at least have the following technical effects or advantages:
in the invention, the provided three-axis micro-electromechanical gyroscope comprises a substrate layer, a device layer and a cover plate layer from bottom to top; the gyroscope main body is located on the device layer, the four second coupling frames are symmetrically distributed around the first coupling frame, the anchor point is located in the center of the first coupling frame and is connected with the first coupling frame through the four first elastic beams, the four mass blocks are located inside the four second coupling frames respectively, the mass blocks are connected with the second coupling frames through the second elastic beams, and the first coupling frames are connected with the second coupling frames through the third elastic beams. Two groups of driving units are symmetrically distributed on two sides of each mass block, the driving units are positioned in the second coupling frame, and at least one group of first sensing units are distributed on the outer side of each mass block; and at least one group of second sensing units are distributed on the surface of one side of the substrate layer or the cover plate layer close to the device layer. The gyroscope structure provided by the invention can realize the angular velocity sensing function of a single chip in the three-axis direction, and simultaneously reduces the volume, power consumption and cost of a sensor chip. The gyroscope body provided by the invention adopts a symmetrical design of four mass blocks, and can reduce and inhibit output errors caused by interference signals (such as impact and vibration) in the external environment through differential output of the induction electrode. The gyroscope main body is connected with the four mass blocks by the rigid coupling frame, so that strong coupling of detection modes of the micro-electromechanical gyroscope can be realized, the influence of external interference signals on detection output can be further reduced, and the stability and reliability of the micro-electromechanical gyroscope are further improved. The preparation and packaging method of the triaxial micro-electromechanical gyroscope provided by the invention realizes vacuum packaging of the device by using a wafer level bonding mode, realizes out-of-plane sensing of the device, can reduce the difficulty of device design, preparation and electrical wiring, and can realize integration of an MEMS chip and an integrated circuit chip.
Drawings
Fig. 1 is a schematic plan structure diagram of a gyroscope body in a three-axis micro-electromechanical gyroscope according to embodiment 1 of the present invention;
fig. 2 is a schematic view of a driving mode of a three-axis micro-electromechanical gyroscope according to embodiment 1 of the present invention;
fig. 3 is a schematic view of a first sensing mode of a three-axis micro-electromechanical gyroscope according to embodiment 1 of the present invention;
fig. 4 is a schematic diagram of a second sensing mode of a three-axis micro-electromechanical gyroscope according to embodiment 1 of the present invention;
fig. 5 is a schematic diagram of a third sensing mode of a three-axis micro-electromechanical gyroscope according to embodiment 1 of the present invention;
fig. 6 is a schematic plan structure view of a gyroscope body in a three-axis micro-electromechanical gyroscope according to embodiment 2 of the present invention;
fig. 7-1 is a schematic cross-sectional structure view of a substrate layer with cavities of supporting pillars in a method for manufacturing and packaging a three-axis micro-electromechanical gyroscope according to embodiment 3 of the present invention;
fig. 7-2 is a schematic cross-sectional structure diagram of etching a gyroscope body on a device layer after the device layer and a substrate layer are aligned and bonded in embodiment 3 of the present invention;
fig. 7-3 are schematic cross-sectional views of cover plate layers with cavity and tsv structures in embodiment 3 of the present invention;
fig. 7-4 are schematic cross-sectional structural diagrams of polysilicon deposited on the front surface of the cover plate layer in embodiment 3 of the present invention;
FIGS. 7-5 are schematic cross-sectional views of cover plate layers with polysilicon filled in through-silicon vias and electrode structures in example 3 of the present invention;
fig. 7 to 6 are schematic cross-sectional views of three-layer structures consisting of a cover plate layer, a device layer and a substrate layer in embodiment 3 of the present invention;
FIGS. 7-7 are schematic structural diagrams of a three-axis MEMS gyroscope obtained in embodiment 3 of the present invention;
fig. 8-1 is a schematic cross-sectional structure view of a substrate layer with a cavity and a through-silicon-via structure in a method for manufacturing and packaging a three-axis micro-electromechanical gyroscope according to embodiment 4 of the present invention;
FIG. 8-2 is a schematic cross-sectional view illustrating the deposition of polysilicon on the front surface of the substrate layer in embodiment 4 of the present invention;
8-3 are schematic cross-sectional structures of the substrate layer with the polysilicon filled in the through-silicon-via and the electrode structure in embodiment 4 of the invention;
fig. 8-4 are schematic cross-sectional views of three-layer structures consisting of a cover plate layer, a device layer and a substrate layer in embodiment 4 of the present invention;
fig. 8-5 are schematic structural views of a three-axis micro-electromechanical gyroscope finally obtained in embodiment 4 of the present invention.
The device comprises a 1-anchor point, a 2-first elastic beam, a 3-mass block, a 4-second elastic beam, a 5-coupling frame, a 6-first sensing unit, a 7-driving unit, a 8-third elastic beam, 9-silicon oxide, a 10-substrate layer, a 11-device layer, a 12-cover plate layer, a 13-through silicon hole, 14-polycrystalline silicon, a 15-second sensing unit and a 16-metal pad.
Detailed Description
In order to better understand the technical solution, the technical solution will be described in detail with reference to the drawings and the specific embodiments.
Example 1:
embodiment 1 provides a three-axis microelectromechanical gyroscope, comprising from bottom to top: a substrate layer, a device layer, and a cover plate layer. Referring to fig. 1, a gyroscope body is located at the device layer, and includes: anchor point 1, coupling frame 5, quality piece 3, drive unit 7, first induction element 6, first elastic beam 2, second elastic beam 4 and third elastic beam 8. The plane structure of the gyroscope main body is centrosymmetric along an X axis and a Y axis; the coupling frame 5 comprises a first coupling frame positioned at the symmetrical center and four second coupling frames symmetrically distributed around the first coupling frame, the first coupling frame is in a structure shaped like a Chinese character 'jing', and the second coupling frames are in a structure shaped like a Chinese character 'Contraband'; the anchor point 1 is located at the center of the first coupling frame, the anchor point 1 is connected with the first coupling frame through four first elastic beams 2, and the four first elastic beams 2 are perpendicular to each other and form a cross-shaped structure; the four mass blocks 3 are respectively positioned inside four second coupling frames, the centers of two of the mass blocks 3 are positioned on an X axis, the centers of the other two mass blocks 3 are positioned on a Y axis, and the mass blocks 3 are connected with the second coupling frames through the second elastic beams 4; the first coupling frame and the second coupling frame are connected through the third elastic beam 8. Two groups of driving units 7 are symmetrically distributed on two sides of each mass block 3, the driving units 7 are located inside the second coupling frame, and the central points of the driving units 7 are located on an X axis or a Y axis. At least one group of the first sensing units 6 is distributed on the outer side of each mass block 3, and the first sensing units 6 are located outside the second coupling frame. At least one group of second sensing units are distributed on the surface of one side, close to the device layer, of the substrate layer or the cover plate layer, and the second sensing units are located right above or below each mass block 3.
The driving unit 7 includes a comb-tooth-shaped driving electrode and a comb-tooth-shaped driving detection electrode, and movable electrode plates in the driving electrode and the driving detection electrode are connected to the mass block 3. The driving electrode and the driving detection electrode are comb-shaped electrodes with equal intervals. The first sensing unit 6 comprises a comb-shaped sensing electrode, and a movable electrode plate in the first sensing unit 6 is connected with the second coupling frame. The comb-shaped induction electrode is a comb tooth electrode with variable intervals. The second sensing unit includes a planar sensing electrode.
The first elastic beam 2 is of a straight beam structure, the second elastic beam 4 is of a combination of a folding beam and a U-shaped beam, and the third elastic beam 8 is of a combination structure of two U-shaped beams.
The mass block 3 is a polygonal cylinder, specifically can be a cuboid, the shape of the coupling frame 5 located around the mass block 3 is changed according to the shape of the mass block 3, and the gap between the coupling frame 5 and the mass block 3 is unchanged.
The driving working mode of the gyroscope is that four mass blocks 3 simultaneously carry out in-plane oscillation motion along the direction of a central symmetry axis, the four mass blocks 3 are simultaneously close to or simultaneously far away from the symmetry center of the whole plane structure of the gyroscope, and the four mass blocks 3 do in-phase motion under the driving working mode.
Specifically, the driving mode of the gyroscope is as shown in fig. 2, and the same-phase ac voltage V is applied to the driving electrodes in the four driving units 7a, 7c, 7e, and 7g1The same-phase alternating voltage V is applied to the drive electrodes in the other four drive units 7b, 7d, 7f and 7h2(V1And V2180 degrees out of phase). Under the action of electrostatic force, the four mass blocks 3 simultaneously carry out in-plane oscillation motion along the direction of the central symmetry axis, and meanwhile, the four mass blocks 3 are arranged to be simultaneously close to or far away from the symmetry center of the whole plane structure. Due to the symmetry of the structure, the gyroscope is driven to move the four mass blocks 3 in phase.
The gyroscope is a three-axis gyroscope and can realize angular velocity sensing in three spatial axes, and the gyroscope is provided with a first sensing mode, a second sensing mode and a third sensing mode. When the gyroscope is in a driving working mode and angular velocity is applied to the outside, the gyroscope can realize angular velocity sensing in three-axis directions. (1) When an angular velocity along the Z-axis direction is applied from the outside, due to the action of coriolis force, the four mass blocks 3 and the coupling frame 5 perform torsional oscillation motion in the X-Y plane simultaneously along the clockwise or counterclockwise direction, the gyroscope is in the first sensing mode, and the information of the angular velocity along the Z-axis direction is detected by the first sensing unit 6, which is shown in fig. 1 and 3. (2) When an angular velocity along the X-axis direction is applied from the outside, due to the effect of the coriolis force, the two mass blocks 3 located on the Y-axis do a vertical torsional motion along the Z-direction, the motion directions of the two mass blocks 3 are opposite, the gyroscope is in the second sensing mode, and the Z-axis direction angular velocity information is detected by the second sensing unit located right above or right below the two mass blocks 3 on the Y-axis, as shown in fig. 1 and 4. (3) When an angular velocity along the Y-axis direction is applied from the outside, due to the action of coriolis force, the two mass blocks 3 located on the X-axis do vertical torsional motion along the Z-direction, the motion directions of the two mass blocks 3 are opposite, the gyroscope is in the third sensing mode, and the Z-axis direction angular velocity information is detected by the second sensing unit located right above or right below the two mass blocks 3 on the X-axis, see fig. 1 and 5.
In a specific structure, as shown in fig. 1, two groups of the first sensing units 6 are symmetrically distributed on two sides of each mass block 3; for each of the masses 3, the first sensing unit 6 is perpendicular to the driving unit 7 corresponding to the mass 3.
When the specific structure is adopted, when the gyroscope is in the first sensing mode, the four groups of first sensing units 6 positioned on one side of the four mass blocks 3 in the clockwise direction of the X-axis/Y-axis adopt in-phase output, and the four groups of first sensing units 6 positioned on one side of the four mass blocks 3 in the counterclockwise direction of the X-axis/Y-axis adopt out-of-phase output, so that differential output is realized. When the gyroscope is in the second sensing mode, the two mass blocks 3 on the Y axis adopt differential output along the second sensing unit right above or below the Z axis. When the gyroscope is in the third sensing mode, the two mass blocks 3 on the X axis are output in a differential mode through the second sensing unit right above or below the Z axis.
Specifically, when the gyroscope is in the first sensing mode, because the four mass blocks 3 and the coupling frame 5 perform torsional oscillation movement in an X-Y plane in a clockwise or counterclockwise direction, at this time, the distance between the movable electrode plate and the fixed electrode plate of the sensing electrode in the first sensing unit 6 changes, the change of the capacitance of the sensing electrode is detected through an external circuit, and the value of the angular velocity applied along the Z axis by the outside world can be obtained through signal conversion and output. Due to the structural symmetry, the sensing electrodes (specifically corresponding to 6a, 6c, 6e and 6g in fig. 1) in the four sets of first sensing units located on one side of the clockwise direction of the X/Y axis of the mass block 3 adopt in-phase output, and the sensing electrodes (specifically corresponding to 6b, 6d, 6f and 6h in fig. 1) in the four sets of sensing units located on one side of the counterclockwise direction of the X/Y axis of the mass block 3 adopt anti-phase output, so that differential output of sensing electrode signals can be realized.
Four mass blocks 3 of the gyroscope are provided with plane sensing electrodes right above or right below the Z axis and used for detecting signals of out-of-plane movement of a second sensing mode and a third sensing mode of the mass blocks of the gyroscope.
When the gyroscope is in a second sensing mode, the second sensing units 15 (i.e., out-of-plane sensing electrodes, see fig. 6, 7-5 to 7-7) may be respectively disposed above the two mass blocks 3 on the Y axis, the two mass blocks 3 on the Y axis perform vertical twisting motion along the Z direction, at this time, the distance between the mass blocks 3 and the out-of-plane sensing electrodes changes, the change of the capacitance of the out-of-plane sensing electrodes is detected by an external circuit, and the value of the angular velocity applied along the X axis from the outside can be obtained by signal conversion output.
Similarly, when the gyroscope is in the third induction mode, the out-of-plane induction electricity is respectively arranged above the two mass blocks 3 on the X axis, so that differential signal output can be realized.
In summary, the three-axis micro-electromechanical gyroscope provided in embodiment 1 can achieve differential output in three-axis directions, and further cancel and reduce output errors caused by vibration and impact in the external environment while enhancing output signals.
Example 2:
on the basis of embodiment 1, the first sensing unit 6 is further modified to obtain embodiment 2.
Embodiment 2 provides a planar structure of a three-axis micro-electromechanical gyroscope as shown in fig. 6, which is different from embodiment 1 in that the first sensing units 6 in embodiment 2 are arranged in four groups.
Specifically, a group of first sensing units 6 is distributed on the outer side of each mass block 3; for each mass block 3, the first sensing unit 6 is disposed in parallel with the driving unit 7 corresponding to the mass block 3, and the first sensing unit 6 is located on a side of the mass block 3 away from the anchor point 1.
Under the specific structure provided in embodiment 2, when the gyroscope is in the first sensing mode, two sets of the first sensing units (specifically corresponding to 6i and 6k in fig. 6) located outside two mass blocks 3 on the X axis use in-phase output, and two sets of the first sensing units (specifically corresponding to 6j and 6l in fig. 6) located outside two mass blocks 3 on the Y axis use in-phase output, so as to implement differential output; when the gyroscope is in the second induction mode, the two mass blocks 3 on the Y axis adopt differential output along the second induction unit right above or below the Z axis; when the gyroscope is in the third sensing mode, the two mass blocks 3 on the X axis are output in a differential mode through the second sensing unit right above or below the Z axis.
Due to the structural symmetry, two groups of induction electrodes 6i and 6k of the first induction unit, which are positioned near two mass blocks 3 on the X axis, adopt in-phase output, and two groups of induction electrodes 6j and 6l of the first induction unit, which are positioned near two mass blocks 3 on the Y axis, adopt anti-phase output, so that differential output of induction electrode signals can be realized.
Compared with the embodiment 1, the structure provided by the embodiment 2 reduces the number of the first sensing units, and can simplify the electrical wiring of the MEMS gyroscope and further reduce the design and processing difficulty of the gyroscope while realizing the sensing function.
Example 3:
step 1, etching a concave cavity structure with a support column on the front side of a substrate layer, and depositing a layer of oxide on the front side and the back side of the substrate layer;
step 2, aligning the back surface of the device layer with the front surface of the substrate layer, and directly bonding; performing patterned photolithography and etching on the device layer to obtain a structure of the gyroscope body as in embodiment 1 or embodiment 2;
step 4, depositing a layer of polycrystalline silicon film on the front surface of the cover plate layer, and filling polycrystalline silicon in the silicon through hole;
and 7, thinning the back of the cover plate layer, leaking the silicon through holes filled with the polycrystalline silicon, depositing a layer of silicon oxide on the back of the cover plate layer, removing the silicon oxide in the corresponding area of the silicon through holes, depositing a metal layer on the back of the cover plate layer, and manufacturing the metal bonding pad.
The package structure obtained in example 3 is formed by bonding three layers, i.e., a substrate layer, a device layer, and a cover plate layer, from bottom to top. The process adopts a method of forming holes on a cover plate layer by using a Through Silicon Via (TSV) technology and depositing polycrystalline Silicon to process an out-of-plane electrode of the device and realize electrical connection. The method specifically comprises the following steps:
step 1, as shown in fig. 7-1, a concave cavity structure with a supporting pillar is etched on the front surface of the substrate layer 10 by using a deep reactive ion etching method. And depositing a layer of oxide 9 on the front and back surfaces of the substrate layer 10 by thermal oxidation or chemical vapor deposition.
Step 2, as shown in fig. 7-2, the back side of the device layer 11 is aligned and directly bonded with the front side of the substrate layer 10. And carrying out patterned photoetching and etching on the device layer 11 to etch out the structure of the gyroscope main body.
And step 3, as shown in fig. 7-3, etching a structure with cavities of support pillars and through-silicon vias 13 with a depth of more than 100 microns on the front surface of the cover plate layer 12 by using two patterned lithography and deep reactive ion etching methods, and depositing a layer of silicon oxide 9 on the front surface and the back surface of the cover plate layer by using a thermal oxidation or chemical vapor deposition method.
And step 4, as shown in fig. 7-4, depositing a layer of polysilicon 14 film on the front surface of the cover plate layer 12 by using a low-pressure chemical vapor deposition method, and simultaneously filling the polysilicon 14 at the through silicon via 13.
And 5, as shown in fig. 7-5, polishing the polysilicon 14 to the surface of the support pillar silicon oxide 9 by using a chemical mechanical polishing method, and simultaneously etching the electrode structure at the position of the remaining polysilicon 14 by using a patterned photoetching and etching method, while remaining the silicon oxide 9 on the bottom surface of the cavity of the cover plate layer.
And 6, as shown in fig. 7-6, directly aligning and bonding the front surface of the cover plate layer 12 and the front surface of the device layer 11 in a wafer-level vacuum bonding mode to complete vacuum packaging of the device.
The three-axis micro-electromechanical gyroscope provided in embodiment 1 or embodiment 2 can be obtained by using the packaging preparation method provided in embodiment 3. In embodiment 3, the electrical connection of the device is realized by filling the polysilicon 14 in the through silicon via, and the fabrication of the structure of the out-of-plane sensing electrode 15 is realized, which greatly simplifies the electrical wiring of the device and simultaneously realizes the direct integration of the device and the CMOS chip. The method realizes the vacuum packaging of the device by adopting a wafer-level vacuum bonding mode, reduces the design and processing difficulty of the device, is simple and efficient, and is beneficial to the batch production of the sensors.
Example 4:
embodiment 4 provides a method for manufacturing and packaging a three-axis micro-electromechanical gyroscope, which can further improve steps 1 and 7 in embodiment 3 to obtain embodiment 4, and specifically includes:
in step 1, after the cavity structure with the support pillar is etched on the front surface of the substrate layer, and before a layer of silicon oxide is deposited on the front surface and the back surface of the substrate layer, the method further includes: etching a silicon through hole structure at the bottom of the cavity structure of the supporting column; after depositing a layer of silicon oxide on the front and back surfaces of the substrate layer, the method further comprises the following steps: depositing a layer of polycrystalline silicon film in the cavity structure of the supporting column of the substrate layer, and filling polycrystalline silicon in the silicon through hole; and etching the polycrystalline silicon film to manufacture the plane induction electrode.
In the step 7, thinning the back surfaces of the substrate layer and the cover plate layer respectively, leaking the through holes filled with the polycrystalline silicon, depositing a layer of silicon oxide on the back surfaces of the substrate layer and the cover plate layer, and removing the silicon oxide in the area corresponding to the silicon through holes; and depositing a metal layer on the back surfaces of the substrate layer and the cover plate layer to manufacture a metal bonding pad.
Specifically, example 4 can be modified from process step 1 of example 3 to the following three steps:
(1) as shown in fig. 8-1, a cavity with supporting pillars with a depth of less than 10 microns is etched on the front surface of the substrate layer 10 by using a method of patterned lithography and deep reactive ion etching; and then, etching a through silicon via 13 structure with the depth of more than 100 microns at the bottom of the concave cavity by adopting a patterned photoetching and deep reactive ion etching method, and depositing a layer of silicon oxide 9 on the front surface and the back surface of the substrate layer 10 by adopting a thermal oxidation or chemical vapor deposition method.
(2) As shown in fig. 8-2, a thin film of polysilicon 14 is deposited on the bottom of the cavity of the substrate layer 10, and the polysilicon 14 fills up at the through-silicon via 13.
(3) As shown in fig. 8-3, the polysilicon 14 film is etched by patterned photolithography and etching to form the second sensing element 15 (i.e., the out-of-plane sensing electrode), while the silicon oxide layer 9 remains on the bottom surface of the cavity of the substrate layer 10.
The remaining process steps are in accordance with the sequence of process steps described in example 3, and since the structure of the substrate layer 10 is changed at this time, the cross-sectional structure is as shown in fig. 7-4 when the front surface of the cover plate layer 12 and the front surface of the device layer 11 are directly aligned and bonded in a wafer-level vacuum bonding manner.
Example 4 the process step 7 of example 3 can be modified to: respectively thinning the back surfaces of the substrate layer 10 and the cover plate layer 12 by adopting a chemical mechanical polishing method until the through holes filled with the polysilicon 14 are leaked out, then depositing a layer of silicon oxide 9 on the back surfaces of the substrate layer 10 and the cover plate layer 12, and then removing the silicon oxide in the through hole area by adopting a patterned photoetching and etching mode; and finally, depositing a metal layer on the back surfaces of the substrate layer 10 and the cover plate layer 12 respectively, performing patterned photoetching and etching on the metal layer respectively, and manufacturing a metal bonding pad 16, so that electric wiring can be completed, and finally manufacturing and vacuum packaging of the MEMS gyroscope are completed.
In contrast to example 3, example 4 enables the fabrication of a second sensing element 15 (i.e. an out-of-plane sensing electrode) structure on both the substrate layer 10 and the cover plate layer 12. When the obtained three-axis micro-electromechanical gyroscope is in the second and third induction modes, the upper and lower two out-of-plane induction electrodes 15 can be adopted for out-of-plane sensing, the structure increases the output signals of the induction electrodes by two times, and the output sensitivity of the gyroscope can be improved.
The three-axis micro-electromechanical gyroscope and the preparation and packaging method thereof provided by the embodiment of the invention at least comprise the following technical effects:
(1) the triaxial micro-electromechanical gyroscope provided by the invention adopts a completely symmetrical four-mass-block tuning fork type decoupling structure, and the decoupling adopts an elastic beam structure to realize the decoupling of a driving mode and a detection mode, so that the influence of the driving mode on the detection mode can be effectively reduced, and the precision and the performance of the gyroscope are improved.
(2) The three-axis micro-electromechanical gyroscope provided by the invention is provided with the sensing electrodes which are completely independent and symmetrically distributed, can realize differential detection, and can further reduce and inhibit output errors caused by vibration and impact in an external environment.
(3) The three-axis micro-electromechanical gyroscope provided by the invention only has one fixed anchor point structure, and can effectively inhibit the influence of packaging stress on the performance of a gyroscope device caused by the difference of CTE (coefficient of thermal expansion) of different layers.
(4) The three-axis micro-electromechanical gyroscope provided by the invention can realize sensing in three axis directions on a single chip, can effectively improve the sensing performance of the MEMS gyroscope, and simultaneously reduces the volume and power consumption of a sensor chip.
(5) According to the three-axis micro-electromechanical gyroscope, the first coupling frame and the second coupling frame are connected through the third elastic beam of the two U-shaped beam combined structures, so that the coupling among three sensing modes is reduced, and the sensing precision of the MEMS gyroscope in the three-axis direction can be effectively improved.
(6) According to the preparation and packaging method of the triaxial micro-electromechanical gyroscope, the electrical communication of the device is realized by adopting a mode of filling the polysilicon in the silicon through hole, and the manufacture of the out-of-plane induction electrode structure is realized. The method realizes the vacuum packaging of the device by adopting a wafer-level vacuum bonding mode, reduces the design and processing difficulty of the device, is simple and efficient, and is beneficial to the batch production of the sensors.
Finally, it should be noted that the above embodiments are only for illustrating the technical solutions of the present invention and not for limiting, and although the present invention has been described in detail with reference to examples, it should be understood by those skilled in the art that modifications or equivalent substitutions may be made on the technical solutions of the present invention without departing from the spirit and scope of the technical solutions of the present invention, which should be covered by the claims of the present invention.
Claims (10)
1. A three-axis microelectromechanical gyroscope, comprising from bottom to top: a substrate layer, a device layer and a cover plate layer;
the gyroscope body is located in the device layer and includes: the device comprises an anchor point, a coupling frame, a mass block, a driving unit, a first sensing unit, a first elastic beam, a second elastic beam and a third elastic beam;
the plane structure of the gyroscope main body is centrosymmetric along an X axis and a Y axis; the coupling frames comprise a first coupling frame positioned at the symmetrical center and four second coupling frames symmetrically distributed around the first coupling frame, the first coupling frame is of a structure shaped like a Chinese character 'jing', and the second coupling frames are of a structure shaped like a Chinese character 'Contraband'; the anchor point is positioned at the center of the first coupling frame and is connected with the first coupling frame through four first elastic beams, and the four first elastic beams are mutually perpendicular and form a cross structure; the four mass blocks are respectively positioned inside the four second coupling frames, the centers of two of the mass blocks are positioned on an X axis, the centers of the other two mass blocks are positioned on a Y axis, and the mass blocks are connected with the second coupling frames through the second elastic beams; the first coupling frame is connected with the second coupling frame through the third elastic beam;
two groups of driving units are symmetrically distributed on two sides of each mass block, the driving units are positioned in the second coupling frame, and the central points of the driving units are positioned on an X axis or a Y axis;
at least one group of first sensing units is distributed on the outer side of each mass block, and the first sensing units are positioned outside the second coupling frame;
at least one group of second sensing units are distributed on the surface of one side, close to the device layer, of the substrate layer or the cover plate layer, and the second sensing units are located right above or below each mass block.
2. The tri-axial microelectromechanical gyroscope of claim 1, wherein the driving mode of operation of the gyroscope is that four masses simultaneously oscillate in-plane along a central axis of symmetry, the four masses simultaneously move closer to or further away from the center of symmetry of the overall planar structure of the gyroscope, and the four masses in the driving mode of operation move in phase.
3. The tri-axial microelectromechanical gyroscope of claim 1, wherein the gyroscope has a first sensing mode, a second sensing mode, and a third sensing mode;
when the gyroscope is in a driving working mode, if the angular velocity along the Z-axis direction is applied by the outside, the four mass blocks and the coupling frame simultaneously do torsional pendulum motion in an X-Y plane along the clockwise direction or the anticlockwise direction, the gyroscope is in the first sensing mode, and the information of the angular velocity along the Z-axis direction is detected through the first sensing unit; if an angular velocity along the X-axis direction is applied from the outside, the two mass blocks positioned on the Y axis do up-and-down torsional pendulum motion along the Z direction, the motion directions of the two mass blocks are opposite, the gyroscope is in the second sensing mode, and the angular velocity information in the Z-axis direction is detected through the second sensing units positioned right above or right below the two mass blocks on the Y axis; if the angular velocity along the Y-axis direction is applied from the outside, the two mass blocks located on the X-axis do vertical torsional pendulum motion along the Z-direction, the motion directions of the two mass blocks are opposite, the gyroscope is located in the third sensing mode, and the second sensing unit located right above or below the two mass blocks on the X-axis detects the angular velocity information along the Z-axis direction.
4. The tri-axial microelectromechanical gyroscope of claim 3, characterized in that two sets of the first sensing units are symmetrically distributed on both sides of each of the masses; for each mass block, the first sensing unit is perpendicular to the driving unit corresponding to the mass block.
5. The tri-axial microelectromechanical gyroscope of claim 4, wherein when the gyroscope is in the first sensing mode, four sets of the first sensing units on one side of the four proof masses in the X/Y clockwise direction use in-phase output, and four sets of the first sensing units on one side of the four proof masses in the X/Y counterclockwise direction use in-phase output, thereby implementing differential output;
when the gyroscope is in the second induction mode, the second induction units which are positioned right above or right below the two mass blocks on the Y axis along the Z axis adopt differential output;
and when the gyroscope is in the third induction mode, the two mass blocks on the X axis adopt differential output along the second induction unit right above or below the Z axis.
6. The tri-axial microelectromechanical gyroscope of claim 3, characterized in that a set of the first sensing elements is distributed outside each of the masses; for each mass block, the first sensing unit is arranged in parallel with the driving unit corresponding to the mass block, and the first sensing unit is positioned on one side of the mass block, which is far away from the anchor point;
when the gyroscope is in the first induction mode, two groups of first induction units positioned outside two mass blocks on an X axis adopt in-phase output, and two groups of first induction units positioned outside two mass blocks on a Y axis adopt opposite-phase output, so that differential output is realized;
when the gyroscope is in the second induction mode, the second induction units which are positioned right above or right below the two mass blocks on the Y axis along the Z axis adopt differential output;
and when the gyroscope is in the third induction mode, the two mass blocks on the X axis adopt differential output along the second induction unit right above or below the Z axis.
7. The tri-axial microelectromechanical gyroscope of claim 1, wherein the driving unit comprises comb-shaped driving electrodes and comb-shaped driving detection electrodes, and movable electrode plates of the driving electrodes and the driving detection electrodes are connected to the mass block; the first sensing unit comprises a comb-tooth-shaped sensing electrode, and a movable electrode plate in the first sensing unit is connected with the second coupling frame; the second sensing unit comprises a planar sensing electrode; the driving electrode and the driving detection electrode are comb-shaped electrodes with equal intervals, and the comb-shaped induction electrodes are comb-shaped electrodes with variable intervals.
8. The tri-axial microelectromechanical gyroscope of claim 1, wherein the first spring beam is a straight beam structure, the second spring beam is a combination of a folded beam and a U-shaped beam, and the third spring beam is a combination of two U-shaped beams.
9. A preparation and packaging method of a three-axis micro-electromechanical gyroscope is characterized by comprising the following steps:
step 1, etching a concave cavity structure with a support column on the front side of a substrate layer, and depositing a layer of oxide on the front side and the back side of the substrate layer;
step 2, aligning the back surface of the device layer with the front surface of the substrate layer, and directly bonding; performing patterned lithography and etching on the device layer to obtain a structure of the gyroscope body according to any of claims 1 to 8;
step 3, etching a cavity structure with a support column and a silicon through hole structure on the front surface of the cover plate layer, and depositing a layer of silicon oxide on the front surface and the back surface of the cover plate layer;
step 4, depositing a layer of polycrystalline silicon film on the front surface of the cover plate layer, and filling polycrystalline silicon in the silicon through hole;
step 5, polishing the polysilicon deposited on the groove structure of the supporting column until part of the region leaks out of the surface of the silicon oxide layer; etching the polysilicon which is partially reserved after the polishing treatment to obtain an electrode structure which is used as the planar induction electrode according to claim 7;
step 6, directly aligning and bonding the front surface of the cover plate layer and the front surface of the device layer in a wafer-level vacuum bonding mode;
and 7, thinning the back of the cover plate layer, leaking the silicon through holes filled with the polycrystalline silicon, depositing a layer of silicon oxide on the back of the cover plate layer, removing the silicon oxide in the corresponding area of the silicon through holes, depositing a metal layer on the back of the cover plate layer, and manufacturing the metal bonding pad.
10. The method for preparing and packaging a tri-axial microelectromechanical gyroscope of claim 9, wherein in step 1, after etching the cavity structure with the support posts on the front side of the substrate layer and before depositing a layer of silicon oxide on the front side and the back side of the substrate layer, the method further comprises: etching a silicon through hole structure at the bottom of the cavity structure of the supporting column;
after depositing a layer of silicon oxide on the front and back surfaces of the substrate layer, the method further comprises the following steps: depositing a layer of polycrystalline silicon film in the cavity structure of the supporting column of the substrate layer, and filling polycrystalline silicon in the silicon through hole; etching the polysilicon film to manufacture the planar sensing electrode according to claim 7;
in the step 7, thinning the back surfaces of the substrate layer and the cover plate layer respectively, leaking the through holes filled with the polycrystalline silicon, depositing a layer of silicon oxide on the back surfaces of the substrate layer and the cover plate layer, and removing the silicon oxide in the area corresponding to the silicon through holes; and depositing a metal layer on the back surfaces of the substrate layer and the cover plate layer to manufacture a metal bonding pad.
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114719835A (en) * | 2022-02-22 | 2022-07-08 | 瑞声开泰科技(武汉)有限公司 | Micromechanical gyroscope and electronic product |
| CN117490672A (en) * | 2024-01-02 | 2024-02-02 | 南京元感微电子有限公司 | Integrated triaxial gyroscope |
Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102077054A (en) * | 2008-06-27 | 2011-05-25 | 感应动力股份公司 | Microgyroscope |
| US20110154898A1 (en) * | 2009-12-24 | 2011-06-30 | Stmicroelectronics S.R.L. | Integrated microelectromechanical gyroscope with improved driving structure |
| CN102305626A (en) * | 2011-07-07 | 2012-01-04 | 西北工业大学 | Novel MEMS (micro electro mechanical system) centrifugal-type gyroscope |
| CN102435776A (en) * | 2011-10-20 | 2012-05-02 | 中北大学 | Single-chip integrated eight-beam-arm triaxial accelerometer |
| CN102636162A (en) * | 2012-03-26 | 2012-08-15 | 北京航天时代光电科技有限公司 | Three-axis micro-mechanical gyroscope |
| CN103438878A (en) * | 2013-09-15 | 2013-12-11 | 滕金燕 | Triaxial micromechanical gyroscope |
| CN103900545A (en) * | 2014-03-20 | 2014-07-02 | 东南大学 | Monolithic integration holohedral symmetry three-axis silicon micro-tuning fork gyroscope |
| CN104807454A (en) * | 2015-04-29 | 2015-07-29 | 东南大学 | Monolithic integrated six-degree-of-freedom micro-inertial measurement unit and processing method thereof |
| CN105606083A (en) * | 2016-03-08 | 2016-05-25 | 清华大学 | External support MEMS resonant gyroscope with four mass blocks |
| CN109387191A (en) * | 2018-09-28 | 2019-02-26 | 清华大学 | A kind of high-temperature adaptability MEMS planar resonant gyroscope structure |
| CN112485468A (en) * | 2019-08-22 | 2021-03-12 | 恩智浦美国有限公司 | Multi-axis sensing device based on frequency modulation and operation method thereof |
| CN113091721A (en) * | 2021-03-19 | 2021-07-09 | 武汉大学 | MEMS gyroscope and preparation and packaging method thereof |
-
2021
- 2021-08-30 CN CN202111001878.3A patent/CN113607152B/en active Active
Patent Citations (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102077054A (en) * | 2008-06-27 | 2011-05-25 | 感应动力股份公司 | Microgyroscope |
| US20110154898A1 (en) * | 2009-12-24 | 2011-06-30 | Stmicroelectronics S.R.L. | Integrated microelectromechanical gyroscope with improved driving structure |
| CN102305626A (en) * | 2011-07-07 | 2012-01-04 | 西北工业大学 | Novel MEMS (micro electro mechanical system) centrifugal-type gyroscope |
| CN102435776A (en) * | 2011-10-20 | 2012-05-02 | 中北大学 | Single-chip integrated eight-beam-arm triaxial accelerometer |
| CN102636162A (en) * | 2012-03-26 | 2012-08-15 | 北京航天时代光电科技有限公司 | Three-axis micro-mechanical gyroscope |
| CN103438878A (en) * | 2013-09-15 | 2013-12-11 | 滕金燕 | Triaxial micromechanical gyroscope |
| CN103900545A (en) * | 2014-03-20 | 2014-07-02 | 东南大学 | Monolithic integration holohedral symmetry three-axis silicon micro-tuning fork gyroscope |
| CN104807454A (en) * | 2015-04-29 | 2015-07-29 | 东南大学 | Monolithic integrated six-degree-of-freedom micro-inertial measurement unit and processing method thereof |
| CN105606083A (en) * | 2016-03-08 | 2016-05-25 | 清华大学 | External support MEMS resonant gyroscope with four mass blocks |
| CN109387191A (en) * | 2018-09-28 | 2019-02-26 | 清华大学 | A kind of high-temperature adaptability MEMS planar resonant gyroscope structure |
| CN112485468A (en) * | 2019-08-22 | 2021-03-12 | 恩智浦美国有限公司 | Multi-axis sensing device based on frequency modulation and operation method thereof |
| CN113091721A (en) * | 2021-03-19 | 2021-07-09 | 武汉大学 | MEMS gyroscope and preparation and packaging method thereof |
Non-Patent Citations (3)
| Title |
|---|
| K. -J. TSENG等: "A Monolithic Tri-axis MEMS Gyroscope Operating in Air", 《2020 IEEE INTERNATIONAL SYMPOSIUM ON INERTIAL SENSORS AND SYSTEMS (INERTIAL)》 * |
| S. WISHER等: "A high-frequency epitaxially encapsulated single-drive quad-mass tri-axial resonant tuning fork gyroscope", 《2016 IEEE 29TH INTERNATIONAL CONFERENCE ON MICRO ELECTRO MECHANICAL SYSTEMS (MEMS)》 * |
| 陈竟成等: "种基于SOI工艺的s轴单片微陀螺仪的研究", 《中国优秀硕士学位论文全文数据库 信息科技辑》 * |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114719835A (en) * | 2022-02-22 | 2022-07-08 | 瑞声开泰科技(武汉)有限公司 | Micromechanical gyroscope and electronic product |
| CN117490672A (en) * | 2024-01-02 | 2024-02-02 | 南京元感微电子有限公司 | Integrated triaxial gyroscope |
| CN117490672B (en) * | 2024-01-02 | 2024-03-01 | 南京元感微电子有限公司 | Integrated triaxial gyroscope |
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