CN112209332B - Double-sided electrode manufacturing and wafer-level vacuum packaging method for single-chip six-axis IMU - Google Patents
Double-sided electrode manufacturing and wafer-level vacuum packaging method for single-chip six-axis IMU Download PDFInfo
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- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
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- B81B2201/0235—Accelerometers
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Abstract
The invention discloses a double-sided electrode manufacturing and wafer-level vacuum packaging method of a single-chip six-axis IMU. The integral structure formed by the method comprises a substrate layer, a device layer and a cap layer, wherein a multilayer interconnection structure is realized on the substrate layer, wiring layout is optimized, parasitic capacitance is reduced, and connection between a subsequent circuit and an external circuit is facilitated; the device layer comprises a sensitive structure, a silicon column and a silicon wall, wherein the silicon column is used for connecting the metal electrode on the cap layer and the basal layer; the silicon wall is respectively bonded with the basal layer and the cap layer to form a vacuum closed cavity. The method combines vacuum packaging with processing of MEMS sensitive structures, avoids possible pollution to the bare chip during secondary vacuum packaging, can realize double-sided electrode manufacture, and provides possibility for detecting non-planar motion signals.
Description
Technical Field
The invention relates to a micro-machining process method of a micro-electromechanical sensor, in particular to a double-sided electrode manufacturing and wafer level vacuum packaging method of a single-chip six-axis IMU.
Background
The common multi-axis inertial sensor adopts a scheme that a plurality of single-axis or multi-axis gyroscopes and accelerometers are combined together, and the whole system is not high in integration level and large in size. In 2017, the university of Qinghua proposes a single-anchor point four-mass MEMS six-axis inertial sensor (patent number CN 201710119983), which can realize six-axis inertial measurement by using a single sensitive structure, including acceleration measurement of x-axis, y-axis and z-axis on three axes and angular velocity measurement of x-axis, y-axis and z-axis on three axes. The single-piece six-shaft IMU (Inertial Measurement Unit) can be provided with the overall size, the manufacturing cost and the comprehensive performance, and has high research value and application value. The current manufacturing of a single-piece six-axis IMU has the following difficulties: 1) The modal motions of the monolithic six-axis IMU in real operation include planar and non-planar motions. When detecting non-planar motion signals, in order to improve detection accuracy and enhance environmental adaptability, a differential mode is adopted in a detection mode, and external interference signals are eliminated as a common means. Therefore, a differential detection mode is required to be provided by paving double-sided electrodes, and gaps between the sensitive structure and the upper electrode and the lower electrode are strictly controlled to ensure that differential capacitances are equal. 2) When the single-chip six-axis IMU realizes high-precision angular velocity detection, vacuum packaging with higher vacuum degree is needed. 3) The number of pins of the monolithic six-axis inertial sensor is more than that of the single-axis gyroscope or the accelerometer, and the metal wiring is relatively complex, so that the connection with an external measurement and control circuit becomes difficult, and therefore, a multilayer interconnection structure is needed inside the MEMS structure to simplify the metal wiring.
Disclosure of Invention
The invention aims to provide a double-sided electrode manufacturing and wafer level vacuum packaging method of a single-chip six-axis IMU, which is based on the structural design of the single-chip six-axis inertial sensor and provides process support for the single-chip six-axis inertial sensor. The method adopts a multilayer interconnection lead mode to improve the integration level, simplifies complex metal wiring and pin arrangement, and simultaneously realizes the equal-gap double-sided electrode and wafer level vacuum packaging.
The integral structure formed by the method comprises a substrate layer, a device layer and a cap layer, wherein a multilayer interconnection structure is realized on the substrate layer, wiring layout is optimized, parasitic capacitance is reduced, and connection between a subsequent circuit and an external circuit is facilitated; the device layer comprises a sensitive structure, a silicon column and a silicon wall, wherein the silicon column is used for connecting the metal electrode on the cap layer and the basal layer; the silicon wall is respectively bonded with the basal layer and the cap layer to form a vacuum closed cavity. The method combines vacuum packaging with processing of MEMS sensitive structures, avoids possible pollution to the bare chip during secondary vacuum packaging, can realize double-sided electrode manufacture, and provides possibility for detecting non-planar motion signals.
Specifically, the double-sided electrode manufacturing and wafer level vacuum packaging method of the monolithic six-axis IMU provided by the invention comprises the following steps:
(1) Growing a silicon dioxide isolation layer on a silicon wafer; then, a metal layer is manufactured on the silicon dioxide isolation layer to form a cap layer; the metal layer comprises a central anchor point bonding point, a cap layer electrode, a silicon column bonding point and a silicon wall bonding point;
(2) Growing a first silicon dioxide isolation layer on a silicon wafer; then manufacturing a first metal layer on the first silicon dioxide isolation layer, growing a second silicon dioxide isolation layer again, and reserving a through hole; growing a second metal layer again, filling the through holes with metal, and interconnecting the first metal layer and the second metal layer to form a basal layer;
the first metal layer comprises a metal wire and a metal pin;
the second metal layer comprises an anchor bonding point, a substrate layer electrode, a silicon pillar bonding point and a silicon wall bonding point, wherein the anchor bonding point, the silicon pillar bonding point and the substrate layer electrode are respectively interconnected with the first metal layer;
(3) Growing a metal layer on a silicon wafer and forming a front anchor point on the metal layer to form a device layer;
(4) Bonding between the substrate layer and the device layer is achieved through bonding between the anchor bonding points, the silicon pillar bonding points and the silicon wall bonding points on the substrate layer and the front anchor points on the device layer; forming a reverse anchor point on the other surface of the device layer according to the step (3), wherein the heights of the reverse anchor point and the reverse anchor point are equal, and then forming an MEMS sensitive structure, a silicon column and a silicon wall through structure release, wherein the silicon column and the silicon wall are separated from the MEMS sensitive structure;
(5) Bonding between the cap layer and the device layer is achieved through bonding between a central anchor bonding point, the silicon pillar bonding point and the silicon wall bonding point on the cap layer and the opposite anchor on the device layer; reducing the cap layer to be smaller than the base layer; and removing the silicon dioxide on the basal layer to expose the metal pins in the first metal layer for connection with the outside.
In the above method, a getter layer is disposed on the cap layer.
In the above method, each metal layer is manufactured by photolithography, etching, photoresist removal and other methods.
In the above method, in step (4), a step gauge is used to measure the heights of the front anchor point and the back anchor point.
In the above method, in step (4), the sensitive structure is tightly connected with the substrate layer by bonding the substrate layer and the device layer, and simultaneously, the electrical signals of the comb electrodes are led to the metal wiring on the substrate layer through the corresponding anchor points, the silicon column ensures the electrical connection between the device layer and the substrate layer, and the silicon wall ensures the mechanical connection.
In the above method, in step (5), after the cap layer is bonded to the device layer, the silicon wall is tightly connected to the cap layer and the base layer, so as to enclose the device layer, thereby forming a vacuum packaging chamber.
In the above method, in step (5), the size of the cap layer is reduced as follows:
growing a silicon dioxide layer on the cap layer as a mask, and then etching;
in the above method, in step (5), the size of the cap layer is smaller than the size of the base layer, so as to facilitate connection such as wire bonding with a peripheral measurement and control circuit.
Compared with the prior art, the method has the following advantages:
(1) Through double-layer bonding, vacuum packaging and double-sided electrodes are realized at the same time, and the process is simple; (2) Differential detection of non-planar motion is realized by utilizing double-sided electrodes, and interconnection of upper and lower electrodes is realized by utilizing a silicon column structure; (3) The multilayer interconnection structure is utilized to simplify metal wiring and realize vacuum packaging wiring; (4) The method realizes the manufacture of the monolithic six-axis MEMS structure on the basis of the conventional micro-process equipment and single-step process, and has the advantages of simple process, low cost, high production efficiency and the like.
Drawings
FIG. 1 is a schematic diagram of various modes of operation of a monolithic six-axis IMU in accordance with the present invention;
FIG. 2 is a cross-sectional view of a MEMS structure with double-sided electrodes and vacuum packaging made in accordance with the present invention;
FIG. 3 is a schematic diagram of a monolithic six axis IMU of the present invention detecting non-planar motion;
FIG. 4 is a process flow of the capping layer in the method of the present invention;
FIG. 5 is a process flow of a substrate layer in the method of the present invention;
FIG. 6 is a process flow of front side etching of a device layer in the method of the present invention;
FIG. 7 is a schematic illustration of bonding of a device to a substrate layer and release of structure in the method of the present invention;
fig. 8 is a schematic representation of bonding of a device layer to a cap layer in the method of the present invention.
Detailed Description
The experimental methods used in the following examples are conventional methods unless otherwise specified.
Materials, reagents and the like used in the examples described below are commercially available unless otherwise specified.
Fig. 1 is a schematic diagram of single working modes of a single-piece six-axis IMU, with a solid origin indicating rest and an arrow indicating a direction of motion. FIG. 1 (a) shows a finite element model of a six-axis IMU sensitive structure in a stationary state, with four masses numbered clockwise for ease of description; FIG. 1 (b) is a finite element model of a "drive modality" of a sensitive structure; FIG. 1 (c) is a finite element model of a sensitive structure subjected to an X-axis angular velocity in a drive mode; FIG. 1 (d) is a finite element model of a sensitive structure subjected to Y-axis angular velocity in a drive mode; FIG. 1 (e) is a finite element model of a sensitive structure subjected to Z-axis angular velocity in a drive mode; FIG. 1 (f) is a finite element model of a sensitive structure subjected to X-axis acceleration; FIG. 1 (g) is a finite element model of a sensitive structure subjected to Y-axis acceleration; fig. 1 (h) is a finite element model of a sensitive structure subjected to Z-axis acceleration. Wherein the "X-axis angular velocity detection mode" of fig. 1 (c) and the "Y-axis angular velocity detection mode" of fig. 1 (d) are a pair of similar modes. In which fig. 1 (b), 1 (e), 1 (f) and 1 (g) are all planar modes, and fig. 1 (c), 1 (d) and 1 (h) are non-planar modes, and vibration in the Z direction is generated.
To meet the above-mentioned requirements of the operation mode, as shown in fig. 2, the present invention provides a MEMS structure with double-sided electrode and vacuum package, comprising a cap layer 1, a device layer 2 and a base layer 3, wherein the cap layer 1 comprises a silicon layer, a silicon dioxide isolation layer 4, metal layers (respectively a central anchor bonding point 5, a cap layer electrode 6, a silicon pillar bonding point 7 and a silicon wall bonding point 8) and a getter layer 10, the device layer 2 comprises a sensitive structure 24, a silicon pillar 25, a silicon wall 26, front anchor (17, 23) and back anchor 22, and the base layer 3 comprises a silicon dioxide isolation layer 13, a first metal layer 12 and a second metal layer 14, wherein a metal pin 28 is located on the first metal layer 12. The device layer 2 is respectively bonded with the cap layer 1 and the substrate layer 3, the silicon wall surrounds other parts of the device layer such as the silicon column and the sensitive structure, a vacuum environment is provided, and a getter is deposited on the cap layer, so that the service life of the package is prolonged.
The non-planar motion detection principle of the monolithic six-axis IMU for completing double-sided electrode manufacture and wafer level vacuum packaging is shown in fig. 3, fig. 3 (a) is a schematic diagram of an electrode arrangement form of a Z axis, metal electrodes are paved on an upper polar plate and a lower polar plate, a certain distance is kept between the metal electrodes and a device layer, and the metal electrodes and the device layer are positioned correspondingly, so that a vertical detection capacitor or a vertical force balance capacitor is formed and used for detecting and inhibiting the motion of a mass block in the Z axis direction. FIG. 3 (b) is a schematic view showing the projection of the "X-axis angular velocity detection mode" of FIG. 1 (C) on the YZ plane, with MASS3 and MASS1 moving in opposite directions along the Z axis, and the detection capacitance calculation formula being (C) 3- -C 3+ )+(C 1+ -C 1- ). Since the four masses are fully symmetrical, the motion pattern and the detection capacitance calculation method of the "Y-axis angular velocity detection mode" of fig. 1 (d) are the same as those of the "X-axis angular velocity detection mode". FIG. 3 (C) is a schematic view of the projection of FIG. 1 (h) on the YZ plane, with four masses moving in the same direction, and with MASS3 and MASS1, the detection capacitance calculation formula is (C) 3- -C 3+ )+(C 1- -C 1+ ). The introduction of the double-sided electrode can eliminate external interference signals and improve the signal to noise ratio.
In order to obtain the MEMS structure shown in fig. 2, the present invention adopts the following manufacturing method:
as shown in fig. 4, a metal electrode and metal bond sites are formed on the cap layer 1, and a getter is deposited for providing a vacuum environment and improving package lifetime. The specific flow is as follows:
a) Forming a silicon dioxide isolation layer 4 (photoresist layer) with a metal layer pattern by thermally oxidizing and growing silicon dioxide on the cap layer 1 (silicon wafer);
b) Gluing, photoetching, developing and sputtering a metal layer to form a central anchor point bonding point 5, a cap layer electrode 6, a silicon column bonding point 7 and a silicon wall bonding point 8;
c) Coating, photoetching and developing, wherein the photoresist 9 is used as a mask to protect the metal layer, and a getter space is reserved;
d) Photolithography, sputtering, lift-off, and depositing a getter 10 on the cap layer 1.
As shown in fig. 5, a multi-layered interconnection structure is formed on the base layer 3, the second metal layer 14 includes metal electrodes and metal bonding points thereon, and the first metal layer 12 includes metal traces and metal pins 28 for simplifying wiring. The specific flow is as follows:
a) Thermally oxidizing and growing a first silicon dioxide layer on the basal layer 3 (silicon wafer) to form an insulating layer 11;
b) Gluing, photoetching, developing, sputtering metal, and stripping to form a first metal layer 12;
c) Depositing and growing a second silicon dioxide isolation layer 13, isolating and protecting the first metal layer 12, and reserving holes which need to be subjected to metal interconnection;
d) Gluing, photoetching, developing, sputtering metal and stripping to form a second metal layer 14, wherein the second metal layer 14 comprises anchor point bonding points, substrate layer electrodes, silicon column bonding points and silicon wall bonding points, the metal fills up small holes on the silicon dioxide isolation layer 13 to form interconnection of the first metal layer and the second metal layer, and particularly the anchor point bonding points, the silicon column bonding points and the substrate layer electrodes are respectively interconnected with the first metal layer (for simplicity, all interconnections are not shown in the figure).
As shown in fig. 6, the device layer 2 is etched for the first time, forming a single-sided anchor point. The specific flow is as follows:
a) Gluing, photoetching, developing, sputtering metal and stripping to form a metal layer 15;
b) Growing a silicon dioxide isolation layer 16, wherein the pattern is the same as that of the metal layer 15, and the silicon dioxide isolation layer is used as a mask for protecting metal;
c) Deep etching is performed to form a front anchor layer 17 of the device layer 2.
As shown in fig. 7, the device layer 2 with a single-side anchor point and the substrate layer 3 with a multilayer interconnection structure are bonded, and the reverse side of the device layer 2 is subjected to sputtering metal, etching and other treatments, so as to prepare for bonding with a cap layer, and the following processes are performed:
a) Gold-gold bonding the device layer 2 and the base layer 3 with single-sided anchor points;
b) Gluing, photoetching, developing, sputtering metal, and stripping to form a metal layer 18 with the same pattern as the reverse anchor layer;
c) Growing a silicon dioxide isolation layer 19 layer as a mask, and performing deep etching to form an anchor point layer 20;
d) Growing the silicon dioxide isolation layer 21 again, performing deep etching to finish structure release, forming anchor points on the back surface, measuring the etching depth by using a step instrument, and controlling the heights of the steps on the two surfaces to be equal;
e) The silicon dioxide is removed leaving the sensitive structure 29 and the silicon pillars and walls with metal layers on the surface, at which time the silicon pillars 25 and walls 26 are separated from the sensitive structure 24 with the same height as the front central anchor points 22 and 23.
As shown in fig. 8, the device layer 2 and the cap layer 1 are bonded, the redundant part of the edge of the cap layer is etched and removed, the size of the final substrate layer is larger than that of the cap layer, and meanwhile, the silicon dioxide layer on the metal pins on the substrate layer 3 is removed to expose the metal pins, so that the wire bonding between the MEMS system and the peripheral circuit is facilitated.
a) The gold-gold bonding device layer 2 and the cap layer 1 are bonded twice, and the cap layer 1, the device layer 2 and the substrate layer 3 are interconnected;
b) Growing a silicon dioxide isolation layer 27 on the cap layer 1 as a mask;
c) The cap layer 27 is etched back to a size smaller than the base layer 3, excess silicon dioxide is removed, and metal pins 28 on the base layer 3 are exposed, at which time the entire MEMS system is finished.
The distance between the metal electrode 6 on the cap layer 1 and the metal electrode 14 on the basal layer 3 is equal to the distance between the sensitive structure 29, so that two equivalent capacitances are formed, when the single-chip six-axis sensor generates non-planar motion, the displacement can be estimated through the change of differential calculation capacitance values, and the angular velocity or acceleration value is further obtained. The silicon column 25 leads the metal electrode on the cap layer 1 to the basal layer, and the silicon wall 26 seals the whole cavity, thereby playing the role of vacuum encapsulation. The metal wiring is arranged in the silicon dioxide layer 11, and leads each electrode to a metal pin 28 outside the cavity, so that the subsequent connection with a measurement and control circuit and the like is facilitated.
What is not described in detail in the present specification belongs to the prior art known to those skilled in the art.
In this specification, the invention has been described with reference to specific embodiments thereof. The specification and drawings are to be regarded in an illustrative rather than a restrictive sense. Other variations within the spirit of the invention will occur to those skilled in the art, and it is intended that all such variations be included within the scope of the invention as claimed.
Claims (4)
1. A double-sided electrode manufacturing and wafer level vacuum packaging method of a single-chip six-axis IMU comprises the following steps:
(1) Growing a silicon dioxide isolation layer on a silicon wafer; then, a metal layer is manufactured on the silicon dioxide isolation layer to form a cap layer; the metal layer comprises a central anchor point bonding point, a cap layer electrode, a silicon column bonding point and a silicon wall bonding point;
(2) Growing a first silicon dioxide isolation layer on a silicon wafer; then manufacturing a first metal layer on the first silicon dioxide isolation layer, growing a second silicon dioxide isolation layer again, and reserving a through hole; growing a second metal layer again, filling the through holes with metal, and interconnecting the first metal layer and the second metal layer to form a basal layer;
the first metal layer comprises a metal wire and a metal pin;
the second metal layer comprises an anchor bonding point, a substrate layer electrode, a silicon pillar bonding point and a silicon wall bonding point, wherein the anchor bonding point, the silicon pillar bonding point and the substrate layer electrode are respectively interconnected with the first metal layer;
(3) Growing a metal layer on a silicon wafer and forming a front anchor point on the metal layer to form a device layer;
(4) Bonding between the substrate layer and the device layer is achieved through bonding between the anchor bonding points, the silicon pillar bonding points and the silicon wall bonding points on the substrate layer and the front anchor points on the device layer; forming a reverse anchor point on the other surface of the device layer according to the step (3), wherein the heights of the reverse anchor point and the reverse anchor point are equal, and then forming an MEMS sensitive structure, a silicon column and a silicon wall through structure release, wherein the silicon column and the silicon wall are separated from the MEMS sensitive structure;
(5) Bonding between the cap layer and the device layer is achieved through bonding between a central anchor bonding point, the silicon pillar bonding point and the silicon wall bonding point on the cap layer and the opposite anchor on the device layer; reducing the cap layer to be smaller than the base layer; and removing the silicon dioxide on the substrate layer to expose the metal pins in the first metal layer.
2. The method according to claim 1, characterized in that: and a getter layer is arranged on the cover cap layer.
3. The method according to claim 1 or 2, characterized in that: in the step (4), measuring the heights of the front anchor point and the back anchor point by adopting a step instrument.
4. A method according to any one of claims 1-3, characterized in that: in step (5), the size of the cap layer is reduced as follows:
and growing a silicon dioxide layer on the cap layer as a mask, and then etching.
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