CN113595469A - Semiconductor circuit and device for the same - Google Patents

Semiconductor circuit and device for the same Download PDF

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Publication number
CN113595469A
CN113595469A CN202110945867.4A CN202110945867A CN113595469A CN 113595469 A CN113595469 A CN 113595469A CN 202110945867 A CN202110945867 A CN 202110945867A CN 113595469 A CN113595469 A CN 113595469A
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CN
China
Prior art keywords
temperature
driving
control module
detection module
semiconductor circuit
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Pending
Application number
CN202110945867.4A
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Chinese (zh)
Inventor
谢荣才
王敏
左安超
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Guangdong Huixin Semiconductor Co Ltd
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Guangdong Huixin Semiconductor Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by Guangdong Huixin Semiconductor Co Ltd filed Critical Guangdong Huixin Semiconductor Co Ltd
Priority to CN202110945867.4A priority Critical patent/CN113595469A/en
Publication of CN113595469A publication Critical patent/CN113595469A/en
Pending legal-status Critical Current

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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
    • H02P29/00—Arrangements for regulating or controlling electric motors, appropriate for both AC and DC motors
    • H02P29/60—Controlling or determining the temperature of the motor or of the drive
    • H02P29/68—Controlling or determining the temperature of the motor or of the drive based on the temperature of a drive component or a semiconductor component
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/16—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements
    • G01K7/22—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using resistive elements the element being a non-linear resistance, e.g. thermistor

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  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Inverter Devices (AREA)

Abstract

The invention discloses a semiconductor circuit and a device used for the same, wherein the semiconductor circuit comprises a heat dissipation substrate and a circuit wiring layer arranged on the heat dissipation substrate, wherein a drive control module, a three-phase inverter bridge and a temperature detection module are distributed on the circuit wiring layer, and the drive control module is electrically connected with the three-phase inverter bridge; the drive control module is electrically connected with the temperature detection module and adjusts the drive frequency according to the temperature signal fed back by the temperature detection module. The technical scheme of the invention greatly reduces the PCB area of the electrical product using the semiconductor circuit and reduces the cost.

Description

Semiconductor circuit and device for the same
Technical Field
The present invention relates to the field of power semiconductors, and more particularly, to a semiconductor circuit and an apparatus for the same.
Background
The semiconductor circuit is a power driving product combining power electronics and integrated circuit technology, and in the manufacturing process, a substrate assembled with all components (including chips and capacitors) and pins is placed in a mold cavity, and the product is finally formed into a product which is sealed into a whole by injection molding and high-temperature curing molding.
In frequency conversion electrical products such as frequency conversion air conditioners, frequency converters and the like applying semiconductor circuits, a temperature detection circuit and a control circuit electrically connected with the semiconductor circuits are usually additionally arranged on a PCB of the frequency conversion electrical products, and the work of the semiconductor circuits is regulated and controlled by the control circuit according to the temperature of the semiconductor circuits fed back by a temperature detection module. But the area that the PCB board of product required has directly been increased in the setting of temperature detect circuit and control circuit, leads to PCB board area grow, and the cost is higher.
Disclosure of Invention
The invention mainly aims to provide a semiconductor circuit, and aims to solve the problems that the area of a PCB is increased and the cost is high due to the arrangement of a temperature detection circuit and a control circuit.
In order to achieve the purpose, the semiconductor circuit provided by the invention comprises a heat dissipation substrate and a circuit wiring layer arranged on the heat dissipation substrate, wherein a drive control module, a three-phase inverter bridge and a temperature detection module are distributed on the circuit wiring layer, and the drive control module is electrically connected with the three-phase inverter bridge; the drive control module is electrically connected with the temperature detection module and adjusts the drive frequency according to the temperature signal fed back by the temperature detection module.
Preferably, the driving control module switches the driving frequency to a first preset frequency when determining that the current temperature value is within a preset normal temperature range according to the temperature signal fed back by the temperature detection module;
and the driving control module switches the driving frequency to a second preset frequency when determining that the current temperature value is in a preset low-temperature interval according to the temperature signal fed back by the temperature detection module, wherein the second preset frequency is less than the first preset frequency.
Preferably, the driving control module closes the output of the driving signal when determining that the current temperature value is within the preset supercooling temperature range according to the temperature signal fed back by the temperature detection module.
Preferably, the driving control module closes the output of the driving signal when determining that the current temperature value is within a preset overheat temperature range according to the temperature signal fed back by the temperature detection module.
Preferably, the driving control module includes a driving unit and a processing unit, the processing unit is electrically connected to the driving unit and the temperature detection module, and the driving unit is electrically connected to the three-phase inverter bridge.
Preferably, the driving unit includes a high-voltage side driving circuit, a low-voltage side driving circuit and an FPC driving circuit, the high-voltage side driving circuit is electrically connected to three upper bridges of the three-phase inverter bridge, the low-voltage side driving circuit is electrically connected to three lower bridges of the three-phase inverter bridge, and the FPC driving circuit is electrically connected to the FPC switching circuit of the semiconductor circuit.
Preferably, the temperature detection module includes a first resistor and a thermistor, the first resistor and the thermistor are connected in series between a power supply pin and a ground pin of the semiconductor circuit, and one end of the first resistor connected to the thermistor is electrically connected to the driving control module.
Preferably, the power supply pin is connected with the ground pin through a filter capacitor, or the thermistor is arranged adjacent to the three-phase inverter bridge.
Preferably, the respective transistors of the three-phase inverter bridge are disposed around the thermistor.
The invention also provides a device for the semiconductor circuit, which comprises the semiconductor circuit, wherein the semiconductor circuit comprises a heat dissipation substrate and a circuit wiring layer arranged on the heat dissipation substrate, a drive control module, a three-phase inverter bridge and a temperature detection module are arranged on the circuit wiring layer, and the drive control module is electrically connected with the three-phase inverter bridge; the drive control module is electrically connected with the temperature detection module and adjusts the drive frequency according to the temperature signal fed back by the temperature detection module.
According to the technical scheme of the semiconductor circuit, the temperature detection module is integrated in the MIPS module and is electrically connected with the driving control module, so that the temperature detection module feeds back a temperature signal reflecting the MIPS temperature to the driving control module in real time, and the driving control module performs driving frequency adjustment according to the temperature signal fed back by the temperature detection module, and accordingly power of the MIPS is adjusted. Compared with the prior art, the MIPS integrates the temperature detection module, the temperature detection module directly feeds the temperature signal back to the drive control module for processing, and the drive control module carries out drive frequency adjustment according to the temperature signal fed back by the temperature detection module, so that the temperature detection module and the control circuit for carrying out drive frequency adjustment according to the temperature signal are not required to be additionally arranged on a PCB of an electric product using the MIPS, the area of the PCB is greatly reduced, the cost is reduced, and meanwhile, the layout design of the PCB is simplified.
Drawings
FIG. 1 is a block diagram of a semiconductor circuit according to an embodiment of the present invention;
FIG. 2 is a block diagram of a semiconductor circuit according to a second embodiment of the present invention;
FIG. 3 is a block diagram of a semiconductor circuit according to a third embodiment of the present invention;
fig. 4 is a schematic block diagram of a semiconductor circuit according to a fourth embodiment of the present invention.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are exemplary and intended to be illustrative of the present invention and should not be construed as limiting the present invention, and all other embodiments that can be obtained by one skilled in the art based on the embodiments of the present invention without inventive efforts shall fall within the scope of protection of the present invention.
The semiconductor circuit provided by the invention is a circuit module which integrates a power switch device, a high-voltage driving circuit and the like together and is sealed and packaged on the outer surface, and is widely applied to the field of power electronics, such as the fields of frequency converters of driving motors, various inversion voltages, variable frequency speed regulation, metallurgical machinery, electric traction, variable frequency household appliances and the like. The semiconductor circuit herein may be referred to by various other names, such as Modular Intelligent Power System (MIPS), Intelligent Power Module (IPM), or hybrid integrated circuit, Power semiconductor Module, Power Module, etc. In the following embodiments of the present invention, collectively referred to as a Modular Intelligent Power System (MIPS).
The embodiment of the invention provides a MIPS, which comprises a heat dissipation substrate and a circuit wiring layer arranged on the heat dissipation substrate; the heat dissipation substrate is made of a metal material, and specifically can be a rectangular plate made of aluminum or other metal materials with good heat dissipation performance; a circuit wiring layer is disposed on the heat dissipation substrate, the circuit wiring layer including an insulating layer disposed on the heat dissipation substrate and conductive layer traces (e.g., copper traces) formed on the insulating layer.
Referring to fig. 1, in the MIPS of this embodiment, a driving control module 10, a three-phase inverter bridge 20, and a temperature detection module 30 are disposed on a circuit wiring layer. The driving control module 10 is electrically connected to the three-phase inverter bridge 20 to drive and control the on-off state of each bridge arm of the three-phase inverter bridge 20; the driving control module 10 is electrically connected to the temperature detection module 30, the temperature detection module 30 is configured to feed back a corresponding temperature signal to the driving control module 10 according to the detected temperature of the MIPS (the temperature signal reflects an electrical signal of the current temperature of the MIPS), and the driving control module 10 adjusts the driving frequency according to the temperature signal fed back by the temperature detection module 30, that is, adjusts the on-off switching frequency of each bridge arm of the three-phase inverter bridge 20, that is, adjusts the working power of the MIPS module. The driving control module 10 may be a driving chip HVIC.
The MIPS of this embodiment, through integrated temperature detection module 30 in the module of MIPS, temperature detection module 30 is connected with drive control module 10 electricity to temperature detection module 30 is real-time will reflect the temperature signal feedback of MIPS temperature to drive control module 10, and drive control module 10 carries out drive frequency according to the temperature signal of temperature detection module 30 feedback and adjusts MIPS's power. Compared with the prior art, the MIPS of the embodiment has the following advantages: 1. the MIPS of the embodiment integrates the temperature detection module 30, and the temperature detection module 30 directly feeds the temperature signal back to the driving control module 10 for processing, and the driving control module 10 performs driving frequency adjustment according to the temperature signal fed back by the temperature detection module 30, so that the temperature detection module 30 and a control circuit for performing driving frequency adjustment according to the temperature signal are not required to be additionally arranged on the PCB of the electrical product using the MIPS, thereby greatly reducing the area of the PCB, reducing the cost, and simplifying the layout design of the PCB; 2. temperature detection module 30 integration is in MIPS's module, and is closer components and parts, compares in the current mode that sets up outside the module, and it is more accurate to detect the temperature signal of feedback.
Further, in this embodiment, the driving control module 10 performs the driving frequency adjustment according to the temperature signal fed back by the temperature detection module 30 by:
1. when determining that the current temperature value (i.e., the current temperature value of the MIPS module) is within the preset normal temperature range according to the temperature signal fed back by the temperature detection module 30, the drive control module 10 switches the drive frequency to a first preset frequency; for example, the normal temperature range is-25 ℃ to 110 ℃, and the first preset frequency is F1.
2. When the drive control module 10 determines that the current temperature value is in the preset low-temperature range according to the temperature signal fed back by the temperature detection module 30, switching the drive frequency to a second preset frequency, wherein the second preset frequency is smaller than the first preset frequency; for example, the low temperature range is-40 ℃ to-25 ℃, the second preset frequency is F2, and F2 is equal to half of F1.
3. When the drive control module 10 determines that the current temperature value is within the preset supercooling temperature range according to the temperature signal fed back by the temperature detection module 30, the drive control module turns off the output of the drive signal; for example, the supercooling temperature interval is below-40 ℃.
4. When the drive control module 10 determines that the current temperature value is within the preset overheat temperature range according to the temperature signal fed back by the temperature detection module 30, the drive control module turns off the output of the drive signal; for example, the superheat temperature range is above less than 110 ℃.
In the driving control module 10, a normal temperature zone, a low temperature zone, a supercooling temperature zone, an overheating temperature zone, a first preset frequency and a second preset frequency are preset, the second preset frequency is smaller than the first preset frequency, and a mapping relationship between the first preset frequency and the normal temperature zone and between the second preset frequency and the low temperature zone is present. In the driving control module 10, a mapping relation table between a temperature signal and a temperature value is also stored in advance, or a relation calculation formula between a temperature signal and a temperature value is also stored in advance. Thus, after receiving the temperature signal fed back by the temperature detection module 30, the driving control module 10 determines the current temperature value of the MIPS by querying the mapping relation table of the temperature signal and the temperature value or by the relation calculation formula of the temperature signal and the temperature value, then determines the temperature interval (including the normal temperature interval and the low temperature interval) where the MIPS is located according to the current temperature value, and finally switches the driving frequency of the driving control module 10 according to the preset frequency corresponding to the temperature interval where the current temperature is located.
By setting the second preset frequency to be smaller than the first preset frequency, when the temperature of the MIPS module is in the normal temperature range, the driving control module 10 normally drives to work at the first preset frequency; when the temperature of obtaining the MIPS module is in the low temperature region (for example, when just starting up work under adverse circumstances), drive control module 10 is with the low-frequency drive work of second preset frequency, let MIPS work with less power, make MIPS have a process of slowly rising temperature, avoid quick cold and hot impact and damage MIPS's internal device, the effectual safety that has protected MIPS, and when the temperature of MIPS module rose to the normal atmospheric temperature region, drive control module 10 then switched to the normal drive work of first preset frequency. In addition, when the temperature of the MIPS module is in the supercooling temperature range and the overheating temperature range, the temperature of the MIPS exceeds the normal working temperature range of the internal components, the internal components are easily damaged when the MIPS is started to work, and therefore, in order to protect the safety of the MIPS, the driving signal output is closed, and the MIPS does not work. Further, the driving control module 10 may be provided with an alarm signal output terminal, the MIPS is provided with an alarm signal pin, the alarm signal output terminal is electrically connected to the alarm signal pin, the alarm signal pin is electrically connected to an alarm module of a peripheral circuit of the MIPS, and when the driving control module 10 determines that the temperature of the MIPS module is in the supercooling temperature region and the overheating temperature region, the alarm signal is output to allow the alarm module to perform a preset alarm (for example, an alarm mode such as a sound alarm, an alarm lamp alarm, etc.), thereby reminding a user.
Of course, in other embodiments, the temperature interval may also be divided into more intervals with smaller ranges, and each temperature interval corresponds to a preset frequency, so that the driving frequency of the driving control module 10 is more finely regulated according to the current temperature value of the MIPS.
Referring to fig. 2, the driving control module 10 of the present embodiment may include a driving unit 21 and a processing unit 22, the processing unit 22 is electrically connected to the driving unit 21 and the temperature detecting module 30, and the driving unit 21 is electrically connected to the three-phase inverter bridge 20. The processing unit 22 is configured to process the temperature signal fed back by the temperature detecting module 30 (referring to the above-mentioned embodiment) to determine the driving frequency of the driving unit 21, and control the driving unit 21 to drive the three-phase inverter bridge 20 at the determined driving frequency. The processing unit 22 may be a microprocessor, and an I/O port of the microprocessor is electrically connected to the temperature detecting module 30 and receives a temperature signal feedback from the temperature detecting module 30.
Further, referring to fig. 3, the MIPS of the present embodiment may be a 7-channel driven MIPS. Wherein the driving unit 21 includes a high-voltage side driving circuit 211, a low-voltage side driving circuit 212, and an FPC driving circuit 213; the high-voltage side driving circuit 211 is electrically connected with the three upper bridges of the three-phase inverter bridge 20 and respectively drives and controls the on-off of the three upper bridges; the low-voltage side driving circuit 212 is electrically connected with the three lower bridges of the three-phase inverter bridge 20 and respectively drives and controls the on-off of the three lower bridges; the FPC driving circuit 213 is electrically connected to the FPC switch circuit 40 of the MIPS, and drives and controls the conduction of the FPC switch circuit 40.
Further, referring to fig. 4, in one embodiment of the temperature detection module 30, the temperature detection module 30 includes a first resistor R1 and a thermistor Rt, the first resistor R1 and the thermistor Rt are connected in series between the power supply pin VDD and the ground pin VSS of the semiconductor circuit, and one end of the first resistor R1 connected to the thermistor Rt is electrically connected to the driving control module 10. In this embodiment, the temperature signal fed back to the driving control module 10 by the temperature detection module 30 is a voltage signal. Next, the operation principle of the present embodiment will be described by taking as an example the way in which the power supply pin VDD is connected to the ground pin VSS through the first resistor R1 and then through the thermistor Rt.
The working principle of the temperature detection module 30 of the present embodiment is as follows: the resistance value of the thermistor Rt changes with the Temperature change of the MIPS, taking the thermistor Rt as an NTC (Negative Temperature Coefficient) thermistor Rt as an example, when the Temperature of the MIPS is higher, the smaller the resistance value of the thermistor Rt is, the smaller the Temperature signal (the voltage division value of the thermistor Rt on the voltage input by the power supply pin VDD) fed back to the driving control module 10 by the Temperature detection module 30 is; when the temperature of the MIPS is lower, the resistance value of the thermistor Rt is higher, and the temperature signal fed back to the driving control module 10 by the temperature detection module 30 is higher; therefore, the temperature value variation can be known according to the variation of the voltage value fed back by the temperature detection module 30.
In other embodiments, the power supply pin VDD may be connected to the ground pin VSS through the thermistor Rt and then through the first resistor R1, and thus, the temperature signal is a voltage division value of the first resistor R1 for the voltage input to the power supply pin VDD. In addition, in other embodiments, the temperature detection module 30 may also be other circuit structures that achieve the same function.
Further, in this embodiment, the power supply pin VDD is connected to the ground pin VSS through the filter capacitor C, and the filter capacitor C filters some interference signals of the input voltage of the power supply pin VDD, so as to improve the accuracy of the temperature signal fed back by the temperature detection module 30.
In this embodiment, one layout position scheme of the thermistor Rt is as follows: the thermistor Rt is arranged by being adjacent to the three-phase inverter bridge 20, so that the temperature sensed by the thermistor Rt can be closer to the actual temperature of the main heating element of the MIPS, and the accuracy of the temperature signal fed back by the temperature detection module 30 is further improved.
In this embodiment, another layout position scheme of the thermistor Rt is as follows: the transistors of the three-phase inverter bridge 20 are arranged around the thermistor Rt, that is, the thermistor Rt is arranged in the middle of each transistor of the three-phase inverter bridge 20 and is adjacent to each transistor, so that the accuracy of the temperature signal fed back by the temperature detection module 30 is further improved.
Of course, in other embodiments, the thermistor Rt may also adopt other layout position schemes in a similar manner.
The invention also provides a device for MIPS, such as a motor driving circuit board, a variable frequency product such as a variable frequency electric appliance and the like. The apparatus for MIPS includes MIPS, and the specific structure of the MIPS can refer to the above-described embodiments. Since the apparatus for MIPS of the present invention adopts all technical solutions of all the embodiments described above, at least all the beneficial effects brought by the technical solutions of the embodiments described above are achieved, and are not described in detail herein.
The above description is only a part of or preferred embodiments of the present invention, and neither the text nor the drawings should be construed as limiting the scope of the present invention, and all equivalent structural changes, which are made by using the contents of the present specification and the drawings, or any other related technical fields, are included in the scope of the present invention.

Claims (10)

1. A semiconductor circuit is characterized by comprising a heat dissipation substrate and a circuit wiring layer arranged on the heat dissipation substrate, wherein a drive control module, a three-phase inverter bridge and a temperature detection module are distributed on the circuit wiring layer, and the drive control module is electrically connected with the three-phase inverter bridge; the drive control module is electrically connected with the temperature detection module and adjusts the drive frequency according to the temperature signal fed back by the temperature detection module.
2. The semiconductor circuit according to claim 1, wherein the driving control module switches the driving frequency to a first preset frequency when determining that the current temperature value is within a preset normal temperature range according to the temperature signal fed back by the temperature detection module;
and the driving control module switches the driving frequency to a second preset frequency when determining that the current temperature value is in a preset low-temperature interval according to the temperature signal fed back by the temperature detection module, wherein the second preset frequency is less than the first preset frequency.
3. The semiconductor circuit according to claim 1, wherein the driving control module turns off the driving signal output when it is determined that the current temperature value is within the preset supercooling temperature range according to the temperature signal fed back by the temperature detection module.
4. The semiconductor circuit according to claim 1, wherein the driving control module turns off the driving signal output when determining that the current temperature value is within a preset overheat temperature range according to the temperature signal fed back by the temperature detection module.
5. The semiconductor circuit according to claim 1, wherein the driving control module comprises a driving unit and a processing unit, the processing unit is electrically connected with the driving unit and the temperature detection module, and the driving unit is electrically connected with the three-phase inverter bridge.
6. The semiconductor circuit according to claim 5, wherein the driving unit includes a high-voltage side driving circuit, a low-voltage side driving circuit, and an FPC driving circuit, the high-voltage side driving circuit is electrically connected to three upper bridges of the three-phase inverter bridge, the low-voltage side driving circuit is electrically connected to three lower bridges of the three-phase inverter bridge, and the FPC driving circuit is electrically connected to an FPC switch circuit of the semiconductor circuit.
7. The semiconductor circuit according to any one of claims 1 to 6, wherein the temperature detection module includes a first resistor and a thermistor, the first resistor and the thermistor are connected in series between a power supply pin and a ground pin of the semiconductor circuit, and one end of the first resistor connected to the thermistor is electrically connected to the drive control module.
8. The semiconductor circuit of claim 7, wherein the supply pin is connected to the ground pin via a filter capacitor.
9. The semiconductor circuit of claim 7, wherein the thermistor is disposed adjacent to the three-phase inverter bridge or each transistor of the three-phase inverter bridge is disposed around the thermistor.
10. An apparatus for a semiconductor circuit, comprising a semiconductor circuit as claimed in any one of claims 1 to 9.
CN202110945867.4A 2021-08-17 2021-08-17 Semiconductor circuit and device for the same Pending CN113595469A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110945867.4A CN113595469A (en) 2021-08-17 2021-08-17 Semiconductor circuit and device for the same

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN202110945867.4A CN113595469A (en) 2021-08-17 2021-08-17 Semiconductor circuit and device for the same

Publications (1)

Publication Number Publication Date
CN113595469A true CN113595469A (en) 2021-11-02

Family

ID=78238267

Family Applications (1)

Application Number Title Priority Date Filing Date
CN202110945867.4A Pending CN113595469A (en) 2021-08-17 2021-08-17 Semiconductor circuit and device for the same

Country Status (1)

Country Link
CN (1) CN113595469A (en)

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