CN218240748U

CN218240748U - Temperature detection module and temperature control system with temperature detection function

Info

Publication number: CN218240748U
Application number: CN202222650602.4U
Authority: CN
Inventors: 唐春荣; 余家昌; 王鹏博
Original assignee: Aoran Biotechnology Shanghai Co ltd
Current assignee: Aoran Biotechnology Shanghai Co ltd
Priority date: 2022-10-09
Filing date: 2022-10-09
Publication date: 2023-01-06
Anticipated expiration: 2032-10-09

Abstract

The utility model discloses a temperature detection module and have temperature control system of temperature detection function belongs to control by temperature change technical field. The utility model discloses a thermistor and operational amplification unit, the operational amplification unit includes upper portion passageway and lower part passageway, the upper portion passageway the lower part passageway with thermistor forms constant current source monitoring circuit, the lower part passageway be used for with the output of upper portion passageway generates the thermoelectric signal after enlargiing. The utility model discloses can real-time detection temperature source (for example electric heating element or semiconductor refrigeration piece module) temperature.

Description

Temperature detection module and temperature control system with temperature detection function

Technical Field

The utility model relates to a control by temperature change technical field especially relates to a temperature detection module and have temperature control system of temperature detection function.

Background

The refrigeration system and the heating system are both common temperature control systems, and the application of the refrigeration system and the heating system covers a plurality of scenes such as small household equipment, large industrial equipment and the like.

In the existing temperature control systems, most temperature control systems can only heat or refrigerate, for example, the temperature control systems based on electric heating elements, and other temperature control systems can both refrigerate and heat, for example, the temperature control systems based on semiconductor chilling plates utilize the characteristics of the semiconductor chilling plates to change the current direction, so that the cold surface and the hot surface of the semiconductor chilling plates can be exchanged. No matter which kind of temperature control system, the temperature real-time detection to the temperature source (be foretell electric heating element and semiconductor refrigeration piece) is the important research direction in this field always, the utility model aims at providing a temperature detection module and have the temperature control system of temperature detection function, can realize the temperature information of real-time detection temperature source.

SUMMERY OF THE UTILITY MODEL

An object of this application is to provide a temperature detect module and have temperature control system of temperature detection function, realize the effect of the temperature information of real-time detection temperature source.

In order to achieve the above object, the present invention provides the following technical solutions.

A temperature detection module comprises a thermistor and an operational amplification unit, wherein the operational amplification unit comprises an upper channel and a lower channel, the upper channel, the lower channel and the thermistor form a constant current source monitoring circuit, and the lower channel is used for amplifying the output of the upper channel and then generating a thermoelectric signal.

Optionally, the thermistor adopts a positive temperature coefficient or a negative temperature coefficient.

Optionally, in the upper channel: the positive phase input is connected with a first power supply voltage, the reverse phase input is connected with a second power supply voltage through a first resistor, the output is connected with the reverse phase input through the thermistor, the thermistor is connected with the first resistor in series, and the first power supply voltage is smaller than the second power supply voltage.

Optionally, a first filter capacitor is disposed at the first power supply voltage connection, and a second filter capacitor is disposed at the second power supply voltage.

Optionally, the first power supply voltage and the second power supply voltage use standard voltages, and the accuracy of the first resistor is 0.01 Ω.

Optionally, the output of the upper channel is connected to the positive input of the lower channel, and then connected to the thermistor;

and the inverted input of the lower channel is grounded through the third resistor and is connected with the output of the lower channel through the fourth resistor.

A temperature control system with a temperature detection function comprises an electric heating element, a heating subsystem, an electric heating element processing module and the temperature detection module;

the electric heating element processing module is used for controlling the heating subsystem and the electric heating element to form a heating loop; the thermistor is arranged on the electric heating element; the electric heating element processing module is also used for converting the electric heating signal into a temperature value.

Optionally, the heating subsystem includes a heating power supply, an input power supply control module and a program heating control module;

the input power supply control module is used for controlling the on-off between the anode of the heating power supply and the electric heating element according to a first signal emitted by the electric heating element processing module;

the program heating control module is used for controlling the on-off between the negative electrode of the heating power supply and the electric heating element according to a second signal emitted by the electric heating element processing module.

A temperature control system with a temperature detection function is characterized by comprising a semiconductor refrigerating sheet module, a full-bridge driving module, a refrigerating sheet processing module and any one of the temperature detection modules;

the refrigerating sheet processing module is used for controlling the full-bridge driving module and the semiconductor refrigerating sheet module to form a refrigerating loop or a heating loop;

the thermistor is installed on a load connecting surface of the semiconductor refrigerating sheet module, and the refrigerating sheet processing module is further used for converting the thermoelectric signal into the actual temperature of the load connecting surface.

Optionally, the refrigeration sheet processing module is configured to output a first electrical signal, a second electrical signal, and a third electrical signal;

the full-bridge driving module comprises a first half-bridge unit and a second half-bridge unit, the first electric signal is used for driving the first half-bridge unit, the second electric signal is used for driving the second half-bridge unit, and the third electric signal is used for controlling enabling and disabling of the first half-bridge unit and enabling and disabling of the second half-bridge unit.

Compared with the prior art, the beneficial effect of this application lies in:

the utility model discloses can utilize thermistor and binary channels operation amplifying unit to form constant current source monitoring circuit to generate the thermoelectric signal through operation amplifying unit, thermistor's resistance changes along with the change of temperature, and the thermoelectric signal changes along with the change of thermistor resistance, has realized the function of real-time detection temperature. After the temperature detection module is applied to the temperature control system based on the electric heating element, the function of detecting the temperature of the electric heating element in real time can be realized, and after the temperature detection module is applied to the temperature control system based on the semiconductor refrigerating sheet module, the function of detecting the temperature of the load connecting surface in real time can be realized.

Drawings

The technical features and advantages of the present invention are more fully understood by referring to the following detailed description in conjunction with the accompanying drawings.

Fig. 1 is a circuit diagram of a temperature detecting module according to an embodiment of the present invention, in which a thermistor employs a positive temperature coefficient;

fig. 2 is a circuit diagram of a temperature detection module according to an embodiment of the present invention, in which a thermistor has a negative temperature coefficient;

fig. 3 is a circuit diagram of an input power control module according to an embodiment of the present invention;

fig. 4 is a circuit diagram of a program heating control module according to an embodiment of the present invention;

fig. 5 is a circuit diagram of an input side protection unit and a program heating control module according to the present invention;

fig. 6 is a circuit diagram of a program heating control protection module and a program heating control module according to an embodiment of the present invention;

fig. 7 is a partial circuit diagram of an electric heating temperature control system according to an embodiment of the present invention, in which an input power control module, a program heating control module and a program heating control protection module are embodied;

fig. 8 is a circuit diagram of a first half-bridge unit according to an embodiment of the present invention;

fig. 9 is a circuit diagram of a second half-bridge unit according to the present invention;

fig. 10 is a circuit logic diagram of a first half-bridge chip and a second half-bridge chip according to the present invention;

fig. 11 is a circuit diagram between the semiconductor chilling plate module and the full-bridge driving module according to an embodiment of the present invention.

Detailed Description

Unless otherwise defined, technical or scientific terms used in the present specification and claims should have the same meaning as commonly understood by one of ordinary skill in the art to which this invention belongs.

Furthermore, the terms "first," "second," and the like are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or to implicitly indicate a number of the indicated technical features. Thus, a feature defined as "first," "second," etc. may explicitly or implicitly include one or more of that feature. In the description of the present invention, "a plurality" means two or more unless otherwise specified.

This is understood with reference to fig. 1. The embodiment of the utility model provides a temperature detection module is still provided for detect the temperature of temperature source, the temperature source can be electric heating element, also can be semiconductor refrigeration piece module.

This is understood with reference to fig. 1. A temperature detection module comprises a thermistor and an operational amplification unit U5. The thermistor is mounted on a temperature source, represented by resistor R12 in fig. 1. Specifically, the thermistor can be arranged by being attached to the temperature source, can also be arranged on a load of the temperature source in a scarf joint and insertion mode, and can also be provided with a sealing cavity around the temperature source, the thermistor is arranged in the sealing cavity, when the thermistor is arranged on the temperature source in an indirect connection mode, a detection result of the thermistor can have weak deviation, and the deviation can be compensated through an algorithm.

The resistance value of the thermistor changes along with the change of the temperature source, the relationship between the resistance value of the thermistor and the temperature is set before delivery, and data are prestored in a processing module of a system where the temperature detection module is located. The operational amplification unit U5 is used for forming a constant current source monitoring circuit with the thermistor, and amplifying the voltage at the current output end of the thermistor to form a thermoelectric signal for output.

Specifically, the operational amplification unit U5 includes an upper channel and a lower channel, the upper channel, the lower channel and the thermistor form a constant current source monitoring circuit, and the lower channel is used for amplifying the output of the upper channel and then outputting a thermoelectric signal.

The current flowing through the thermistor is constant, the voltage at the current output terminal of the thermistor changes when the temperature changes, the voltage at the current output terminal of the thermistor gradually decreases with the increase of the temperature when the thermistor has a positive temperature coefficient, such as the platinum thermistor PT1000A, and the voltage at the current output terminal of the thermistor gradually increases with the increase of the temperature when the thermistor has a negative temperature coefficient, such as the MT52A102F3950F 00030.

In the upper channel: the positive phase input is connected with a first power supply voltage 2VREF, wherein 2VREF is a standard voltage of 2V, and the precision of the first power supply voltage is higher; the inverting input is connected with a second power supply voltage 3VREF through a first resistor R32, wherein 3VREF is a standard voltage of 3V, and the precision of the second power supply voltage is higher; the output is connected with the inverted input through the thermistor, the thermistor is connected with the first resistor in series, the first power supply voltage is smaller than the second power supply voltage, the difference value of the first power supply voltage and the second power supply voltage is the voltage of the first resistor R32, the current of the thermistor can be calculated according to ohm's law, when the resistance value of the thermistor changes along with the temperature, the voltage of the current input end TEMP + is constant, and the voltage of the current output end TEMP-changes.

A first filter capacitor C6 is arranged at the joint of the first power supply voltage, and a second filter capacitor C7 is arranged at the joint of the second power supply voltage, so that the stability is improved. The positive electrode of the operational amplification unit U5 is provided with a capacitor C5. In one embodiment, the capacitor C5, the first filter capacitor C6, and the second filter capacitor C7 are all ripple capacitors. As shown in fig. 1, the temperature detecting module further includes a capacitor C13 as a tuning capacitor of the feedback circuit, and the capacitor C13 is a bypass capacitor of the thermistor R12. In addition, the first resistor R32 has a precision of 0.01 Ω to improve the precision of the current output TEMP-and the thermoelectric signal.

The output of the upper channel is connected with the positive input of the lower channel and then connected with the thermistor; the inverting input of the lower channel is grounded through a third resistor R31 and is connected with the output of the lower channel through a fourth resistor R34, the amplification factor is set by setting the resistance values of the third resistor R31 and the fourth resistor R34, and the thermoelectric signal formed after amplification is the voltage of the HTADC; the fourth resistor R34 may also be connected in parallel with a capacitor C12.

The temperature detection module is further described by taking a thermistor as a positive temperature coefficient and a negative temperature coefficient as an example respectively:

when the thermistor is a positive temperature coefficient, the thermistor R12 is a PT1000A metal platinum resistor, the resistance value of the resistor increases along with the rise of the induction temperature, and the resistor can be installed on an electric heating element or a load connected with the electric heating element and used for monitoring the temperature of the electric heating element or the load in real time. A constant current source monitoring circuit is designed by using an operational amplification unit U5, the forward input end of an upper channel is 2VREF (namely 2V), the reverse input end VTEMP + is connected with 3VREF (namely 3V) through a resistor R32, and forms a feedback circuit with the output of a lower channel, the voltage difference between two ends of the resistor R32 is 3VREF-2VREF (namely 3V-2V = 1V), the resistor 32 adopts 1K omega, and the current flowing through the resistor R32 is 1V/1K =1mA. The 1mA current flows through the thermistor R12, the rated resistance value of the thermistor R12 is 1K Ω at 0 ℃, and the voltage difference between the two ends of the thermistor R12 is 1ma × 1k Ω =1V according to ohm's law, that is, the voltage difference between VTEMP + and VTEMP-is 1V, so the VTEMP-voltage is 1V. VTEMP-the voltage VHTADC of the HTADC = ((R31 + R34)/R31) × VTEMP =1v × 2=2v through the feedback circuit of the U5 lower channel in fig. 1. The vhtadac is connected to the ADC pin of the electrocaloric element processing module and the control program can read this voltage value and program convert it to a temperature value, i.e. 2V for example equates to 0 ℃. When the temperature of a temperature source or a load rises, the resistance value of the thermistor R12 becomes large, the voltage drop at two ends of the thermistor R12 becomes large, the VTEMP + voltage is the same as the 2VREF voltage and is unchanged, so that the VTEMP-voltage is reduced, the synchronous VHTADC voltage is reduced, and after program conversion, the program detects that the temperature rises.

In the case of a thermistor having a negative temperature coefficient, fig. 2 is introduced for convenience of description, and fig. 2 differs from fig. 1 in that the thermistor is represented by a resistor R50 in fig. 2. R50 is MT52A102F3950F00030 negative temperature coefficient thermistor, the resistance value of the thermistor is reduced along with the rise of the sensed temperature, and the thermistor can be installed on a temperature source or a load connected with the temperature source and used for monitoring the temperature of the temperature source or the load in real time. A constant current source monitoring circuit is designed by using an operational amplification unit U5. In fig. 2, the forward input end of the upper channel of the operational amplifier is 2VREF (i.e., 2V), the reverse input end VTEMP + is connected to 3VREF (i.e., 3V) through the resistor R32, and forms a feedback circuit with the output of the operational amplifier (i.e., the output of the lower channel), the voltage difference between the two ends of the resistor R32 is 3VREF-2VREF, i.e., 3V-2v =1v, and the current flowing through the resistor R32 is 1V/1k =1ma. The current of 1mA flows through the resistor R50, the rated resistance value of the resistor R50 is 1K Ω at 0 ℃, and ohm's law indicates that the voltage difference between both ends of the R50 is 1ma × 1k Ω =1V, i.e., the voltage difference between VTEMP + and VTEMP-is 1V, so the VTEMP-voltage is 1V. VTEMP — VHTADC = ((R31 + R34)/R31) × VTEMP =1v × 2v through the feedback circuit of the lower channel of the operational amplification unit U5 in fig. 2. The vhtadac is connected to the ADC pin of the electrocaloric element processing module and the control program can read this voltage value and program convert it to a temperature value, i.e. 2V for example equates to 0 ℃. When the temperature of the temperature source or the load rises, the resistance value of the resistor R50 becomes small, the voltage drop at two ends of the resistor R50 becomes small, the VTEMP + voltage is the same as the 2VREF voltage and is unchanged, so that the VTEMP-voltage rises, the synchronous VHTADC voltage rises, and the program detects the temperature rise after the program is converted.

The embodiment of the utility model provides a temperature control system with temperature detects function is still provided, including heating device, heating subsystem, the electric heating element processing module that has electric heating element and the temperature detection module that any embodiment provided as above provided. The electric heating element processing module is used for controlling the heating subsystem and the electric heating element to form a heating loop, and the temperature detection module is used for detecting the temperature of the electric heating element.

The heating device can be a heating rod, a carpet or other equipment needing electric heating, the electric heating element can be a resistance wire or other products, the heating device can be provided with a load, and the electric heating element is used for directly or indirectly heating the load. Taking a ceramic heating rod as an example of a heating device, the ceramic heating rod comprises a ceramic body, an electric heating element and a load, wherein the electric heating element and the load are respectively arranged on the ceramic body, and the electric heating element directly transfers heat energy to the ceramic body and then further transfers the heat energy to the load; the load can be a metal block or can be supported by ceramic material.

The electrothermal element processing module is used for realizing the control function of the electric heating temperature control system and can comprise one or more chips capable of running programs, such as a CPU, an MCU, a DSP, an SOC and a singlechip. The electric heating element processing module is used for outputting a first signal and a second signal, the first signal and the second signal are used as two input signals of the heating loop, the heating loop can be conducted when the first signal and the second signal meet the conditions, the electric heating element can heat, otherwise, the heating loop is disconnected, the electric heating element does not heat, when the temperature control system with the temperature detection function is abnormal, the electric heating element processing module adjusts one or two of the first signal and the second signal, the heating loop can be disconnected, the safety of the electric heating element is guaranteed, and the safety of the heating device is correspondingly guaranteed.

The heating subsystem comprises a heating power supply, an input power supply control module and a program heating control module; the input power supply control module is used for controlling the on-off between the anode of the heating power supply and the electric heating element according to the first signal emitted by the electric heating element processing module; the program heating control module is used for controlling the on-off between the negative electrode of the heating power supply and the electric heating element according to the second signal emitted by the electric heating element processing module.

The input power supply control module is provided with a power supply to ensure the normal operation of the input power supply control module, and the input power supply control module is combined with the micro control program to realize the on-off control of the input power supply of the electric heating element. When the electric heating element needs to be heated, the power supply of the input power supply control module needs to be turned on firstly, and when the electric heating element does not need to be heated, the power supply of the input power supply control module is turned off, so that the purpose of controlling the power supply input of the electric heating element according to the requirement is realized.

The input power control module is configured to: when the first signal is at high level, the electric heating element and the anode of the heating power supply can be conducted, and when the first signal is at low level, the electric heating element and the anode of the heating power supply are disconnected.

This is understood with reference to fig. 3. The input power control module comprises a first MOS (metal oxide semiconductor) tube Q4, a first photoelectric coupler U3 and a first triode Q7. When the first signal is at a high level, the first triode Q7 drives the first photoelectric coupler U3 to be conducted, and further drives the first MOS transistor Q4 to be conducted, and when the first signal is at a low level, the first triode Q7, the first photoelectric coupler U3, and the first MOS transistor Q4 are cut off. The source electrode of the first MOS tube Q4 is connected with the anode of the heating power supply, and the drain electrode is connected with the electric heating element; when the source electrode and the drain electrode of the first MOS tube Q4 are conducted, the anode of the heating power supply and the electric heating element can be communicated, otherwise, the anode of the heating power supply and the electric heating element are in an off state, and the heating loop cannot be conducted. The first photoelectric coupler U3 is used for controlling the conduction and the cut-off of the first MOS transistor Q4; the first triode Q7 is used for driving the first photoelectric coupler U3 to be switched on and switched off according to the first signal.

The first MOS transistor Q4 is of a P-channel enhancement type, and when the first MOS transistor Q4 is turned on, a drain voltage VDD (hereinafter referred to as "power supply VDD") thereof is equal to a source voltage thereof, that is, the voltage of the power supply VDD is equal to the voltage of the heating power supply; the grid of first MOS pipe Q4 is connected with supply voltage through resistance R11 to when making first photocoupler U3 cut off, first MOS pipe Q4's grid is the high level, thereby first MOS pipe Q4's source electrode and drain-source resistance do not switch on, and heating power positive pole and electric heating element do not have the electric current to pass through. In the first photoelectric coupler U3, an emitter is grounded, and a collector is connected with a grid electrode of a first MOS (metal oxide semiconductor) tube Q4; when the first photocoupler U3 is turned on, the emitter and the collector thereof are turned on, so that the gate of the first MOS transistor Q4 becomes a low level, and the source and the drain of the first MOS transistor Q4 are turned on, and the positive electrode of the heating power supply and the electric heating element can pass current without other hindering conditions. The first triode Q7 is an NPN (negative-positive-negative) tube, an emitting electrode of the first triode Q7 is grounded and is connected with a base electrode of the first triode Q7 through a resistor R10, the base electrode of the first triode Q7 is connected with the electric heating element processing module through a resistor R22, and a CTRL (control/power-saving) signal is derived from a control pin of the electric heating element processing module. The collecting electrode of first triode Q7 connects a voltage 3V3 through first photoelectric coupler U3 and resistance R33 (for opto-coupler front end current limiting resistance), and when the collecting electrode and the projecting pole of first triode Q7 self switched on, first photoelectric coupler U3 switched on, and when the collecting electrode and the projecting pole of first triode Q7 self ended, first photoelectric coupler U3 was in the off-state.

As can be seen from the above, the CTRL signal may be controlled to be at a high level or a low level by the electrothermal element processing module, when the CTRL signal is at a high level, the voltage Vbe of the base and the emitter of the first triode Q7 is greater than 0.7V (the on voltage of the first triode Q7) through voltage division of the resistor R22 and the resistor R10, the collector and the emitter Vce of the first triode Q7 are turned on, the voltage 3V3, the resistor R33, and the first triode Q7 form a current path, so that the collector end at the rear end of the first photocoupler U3 is turned on, the gate of the first MOS transistor Q4 is at a low voltage, the source and the drain of the first MOS transistor Q4 are turned on, and the power supply VDD voltage is approximately equal to the voltage VCC of the heating power supply. On the contrary, when the CTRL signal is at a low level, the base and emitter voltages Vbe of the first transistor Q7 are about 0, the collector and emitter Vce of the first transistor Q7 are cut off, the voltage 3V3, the resistor R33, and the first transistor Q7 cannot form a current path, the first photocoupler U3 is cut off, the first MOS transistor Q4 is cut off, and the power supply VDD voltage is about 0.

This is understood with reference to fig. 4. The program heating control module comprises a second MOS transistor Q1, a second photoelectric coupler U2 and a second triode Q6. The source electrode of the second MOS tube Q1 is connected with the negative electrode of the heating power supply, and the drain electrode is connected with the electric heating element; the second photoelectric coupler U2 is used for controlling the conduction and the cut-off of the second MOS tube Q1; and the second triode Q6 is used for driving the second photoelectric coupler U2 to be switched on and switched off according to the second signal.

The second MOS transistor Q1 is an N-channel enhancement type, and the gate of the second MOS transistor Q1 is grounded through a resistor R8, so that the gate of the second MOS transistor Q1 is at a low level when the second photocoupler U2 is turned off. A resistor R25 is arranged between the grid of the second MOS tube Q1 and the emitter of the second photoelectric coupler U2, a resistor R8 is a pull-down resistor between the grid of the second MOS tube Q1 and the resistor R25, and a pull-down resistor R1 is further arranged between the emitter of the second photoelectric coupler U2 and the resistor R25. In the second photocoupler U2: the collector is connected with a power supply voltage through a resistor R21, and the emitter is connected with the grid of the second MOS transistor Q1; the second triode Q6 is an NPN transistor, and in the second triode Q6: the base electrode is connected with a second control unit of the electric heating element processing module through a resistor R20, namely, a HEAT signal comes from the electric heating element processing module, the collector electrode is connected with a power supply voltage through a second photoelectric coupler U2 and a resistor R28, and the emitter electrode is grounded and is also connected with the base electrode of a second triode Q6 through a resistor R30.

When the HEAT is at a high level, the collector and the emitter of the second triode Q6 are conducted, the resistor R20, the resistor R30, the second triode Q6, the resistor R28 and the front end of the second photoelectric coupler U2 form a current path, the collector and the emitter of the second photoelectric coupler U2 are also conducted, the resistor R21 and the resistor R1 divide the power supply voltage VCC of the collector of the second photoelectric coupler U2, the voltage vheoto of the emitter of the second photoelectric coupler U2 is smaller than the power supply voltage VCC connected to the collector of the second photoelectric coupler U2 and is greater than 0, and the voltage vheoto at this time is defined as the first voltage. On the contrary, when the HEAT is at the low level of the pulse waveform, the collector and the emitter of the second triode Q6 are cut off, the resistor R20, the resistor R30, the second triode Q6, the resistor R28, and the front end of the second photoelectric coupler U2 cannot form a current path, the collector and the emitter of the second photoelectric coupler U2 are cut off, and the voltage of the HEAT voltage vheoto is about 0V under the pull-down action of the resistor R1. The resistor R25 and the resistor R8 further divide the voltage vheoto control the on/off of the MOS transistor Q1, that is, when vheoto is about the first voltage, the second MOS transistor Q1 is on, and when vheoto is about 0V, the second MOS transistor Q1 is off.

The electric heating element of the small ceramic heating rod can be equivalent to a resistor with the rated resistance of 12 omega, the working condition is that the heating element can generate heat when rated voltage is applied to two ends, and the electric heating element is represented by a resistor R9 in figure 4.

In one embodiment, the drain of the first MOS transistor Q4 in the input power control module is directly connected to the electric heating element, the drain of the second MOS transistor Q1 in the program heating control module is directly connected to the electric heating element, when the first signal and the second signal are both at a high level, the power supply VDD, the electric heating element, the second MOS transistor Q1, and the GNDP connected to the second MOS transistor Q1 form a heating loop through which current passes, and when the first signal and/or the second signal is at a low level, the heating loop is disconnected and no circuit passes.

In other embodiments, the second signal is a pulse signal instead of a high level signal and a low level signal, and the input power control module is not directly connected to the electrical heating element, which will be described in detail below.

The heating subsystem further comprises a program heating control protection module, and the program heating control protection module is used for disconnecting the heating loop when the second signal fails. When the second signal is in fault, the electric heating element is always heated to cause over-temperature or other risks, and the program heating control protection module is adopted to protect the temperature control system with the temperature detection function, so that the safety of the system is improved.

The program heating control protection module includes an input side protection unit for disconnecting a path between the input power control module and the electrothermal element when the second signal fails, and particularly, the input side protection unit is connected with the program heating control module for disconnecting the path between the input power control module and the electrothermal element after the second signal is changed from the pulse signal to the low-level signal.

When the program heating control module inputs a high level, the input side protection unit is charged and controls the input power supply control module to be conducted with the electric heating element; when the program heating control module inputs a low level, the input side protection unit discharges to the input power supply control module and the electric heating element to be disconnected, so that the heating loop is automatically disconnected after the second signal is changed from the pulse signal to a low level signal; in one period of the second signal, the charging amount of the input side protection unit in the high level stage can maintain the input power control module and the electric heating element in the low level stage to be in a conducting state, so that when the second signal is a normal pulse signal, the input power control module and the electric heating element can be continuously heated.

This is understood with reference to fig. 5. The input side protection unit comprises a third MOS tube Q3, a third triode Q5 and a first charging and discharging unit. One of the source electrode and the drain electrode of the third MOS tube Q3 is connected with the input power supply control module, and the other one is connected with the electric heating element, so that the on-off between the input power supply control module and the electric heating element is controlled through the state of the third MOS tube Q3; the third triode Q5 is used for driving a third MOS transistor Q3; the first charging and discharging unit is used for charging when the program heating control module inputs a high level and discharging the base electrode of the third triode Q5 when the program heating control module inputs a low level; the frequency of the pulse signal and the discharge constant of the first charging and discharging unit are set, so that the charging amount of the first charging and discharging unit in the high level stage can maintain the input power control module and the electric heating element in the low level stage in a function of being in a conducting state in one period of the second signal.

The third MOS transistor Q3 is of a P-channel enhancement type, a gate of the third MOS transistor Q3 is connected to a collector of the third triode Q5 through a resistor R27 on one hand, and is connected to a power supply VDD through a resistor R5 (with a resistance value of 10K Ω) on the other hand, the resistor R5 is connected in parallel with a capacitor C4, a source of the third triode Q5 is connected to the power supply VDD, and a drain of the third MOS transistor Q3 is connected to the electric heating element; when the source and drain of the third MOS transistor Q3 are turned on, the positive electrode of the heating power supply may be connected to the electric heating element, and when the source and drain of the third MOS transistor Q3 are turned off, even if the first MOS transistor Q4 is already turned on, the circuit cannot pass between the heating power supply and the electric heating element.

The third triode Q5 is NPN type, the emitter of the third triode Q5 is grounded, and the base of the third triode Q5 is connected with a charging and discharging circuit through a resistor R19 (2K 4 omega); the first charge-discharge unit comprises a first capacitor C11 and a first charge-discharge resistor R6, the first capacitor C11 is 2.2 mu F, and the first charge-discharge resistor R6 is 10K omega, so that the effects of quick charge and slow discharge are realized; the first charging and discharging unit is connected with the program heating control module through a first diode D3, the first charging and discharging unit is connected with the cathode of the first diode D3, and the anode of the first diode D3 is connected with the emitter of a second photoelectric coupler U2.

When the HEAT is a pulse voltage waveform with a set frequency, the current flows through the first diode D3 when the pulse is at a high level, the first charge-discharge resistor R6 and the first capacitor C11 are rapidly charged, the voltage at two ends of the first capacitor C11 is increased, the first diode D3 is cut off when the pulse is at a low level, the first capacitor C11 is slowly discharged through the first charge-discharge resistor R6, and then the voltage is reduced, the pulse frequency only needs to meet the condition that the voltage of the first capacitor C11 is not lower than the voltage of the base and the emitter Vbe of the third triode Q5, from the viewpoint of reliability, the voltage at two ends of the first capacitor C11 can be designed to be not lower than 2Vbe, and the power supply VDD of the electric heating element can be normally switched on when the pulse voltage waveform is generated.

When the HEAT fails and is always at a low level, the voltage vheoto is about 0V, that is, vheoto is at a low level, at this time, the first diode D3 is turned off, the voltage at both ends of the first capacitor C11 is discharged through the first charge-discharge resistor R6, when the voltage of the first charge-discharge resistor R6 is lower than the voltage Vbe of the base and the emitter of the third triode Q5, the third triode Q5 is turned off, the gate of the third MOS transistor Q3 is at a high level under the action of the pull-up resistor R5, at this time, the third MOS transistor Q3 is turned off, the power supply VDD cannot be normally output to the resistor R9, the electric heating element cannot HEAT, and the circuit is safe.

When the HEAT fails and is always in a high level, the voltage vheoto at the emitter of the second photocoupler U2 is about the first voltage, i.e., the voltage vheoto is in a high level, at this time, the voltage charges an RC circuit (i.e., a first charging and discharging unit) composed of the first charging and discharging resistor R6 and the first capacitor C11 through the first diode D3, when the voltage of the first charging and discharging resistor R6 exceeds the base and emitter voltages Vbe of the third triode Q5, the third triode Q5 is turned on, the gate of the third MOS transistor Q3 is in a low level, at this time, the third MOS transistor Q3 is turned on, the power supply VDD can be normally output to the resistor R9, and at this time, whether the electrothermal element works depends on the on state of the second MOS transistor Q1.

The program heating control protection module further comprises an output side protection unit, the output side protection unit is arranged on the program heating control module, and the output side protection unit is used for controlling the program heating control module to disconnect a passage between the negative electrode of the heating power supply and the electric heating element when the second signal is changed into a high-level signal from the pulse signal.

When the program heating control module inputs a high level, the output side protection unit is charged slowly, when the program heating control module inputs a low level, the output side protection unit is discharged quickly, and in one period of the second signal, the discharge amount of the output side protection unit in the low level stage is not lower than the charge amount of the output side protection unit in the high level stage.

This is understood with reference to fig. 6. The output side protection unit comprises a fourth triode Q2, a first voltage comparator U1 and a second charging and discharging unit, the fourth triode Q2 is used for controlling the conduction and the cut-off of a second MOS tube Q1, and when the fourth triode Q2 is conducted, the second MOS tube Q1 is cut off; the first voltage comparator U1 comprises a first channel, and the first channel is used for driving the fourth triode Q2; the second charging and discharging unit is used for driving and controlling the output of the first voltage comparator U1; when the program heating control module inputs a high level, the second charging and discharging unit charges slowly, when the program heating control module inputs a low level, the second charging and discharging unit discharges quickly, after the second control signal is changed into a high level signal from a pulse signal for a period of time, the voltage of the second charging and discharging unit enables the output of the first voltage comparator U1 to reverse, and the fourth triode Q2 further drives the second MOS tube Q1 to be cut off.

The second charging and discharging unit is a two-stage RC charging unit, specifically, a resistor R24 is connected to the heat, the resistor R24 and the resistor R2 are connected in series, a second capacitor C3 and a third capacitor C10 are arranged between the two, a fourth capacitor C2 is arranged at the rear end of the resistor R2, the resistor R24 is further connected in parallel with a second diode D2 and a first charging and discharging resistor R17, a second charging and discharging resistor (namely, the pull-down resistor R1) is arranged between the second photocoupler U2 and the second MOS transistor Q1, and when the program heating control module inputs a low level, the second charging and discharging unit performs rapid discharging through the second diode D2, the first charging and discharging resistor R17 and the second charging and discharging resistor in sequence.

The inverting input of the first channel is connected with the second charge and discharge unit, namely, the resistor R2 is connected, the positive phase input of the first channel is a first fixed voltage, the resistor R4 and the resistor R3 divide voltage of a power supply, and the first fixed voltage is set by utilizing the resistance relation of the resistor R4 and the resistor R3, so that when the second control signal is a pulse signal, the first fixed voltage is greater than the voltage of the second charge and discharge unit, and after the second signal becomes a high level for a period of time, the first fixed voltage is less than the voltage of the second charge and discharge unit.

In the fourth triode Q2: the base electrode is connected with the output of the first channel, the emitting electrode is connected with the grid electrode of the second MOS tube Q1, the emitting electrode is connected with the base electrode through the resistor R7, and the collecting electrode is grounded; when the first fixed voltage is lower than the voltage of the second charging and discharging unit, the emitter and the collector of the fourth triode Q2 are conducted, and the second MOS is cut off.

When the HEAT is a pulse voltage waveform with a set frequency, the slow charging voltage of the fourth capacitor C2 is increased through the resistor R24, the resistor R2, the second capacitor C3 and the third capacitor C10 when the pulse is at a high level, the voltage of the fourth capacitor C2 is quickly discharged through the second diode D2, the resistor R17 and the resistor R1 when the pulse is at a low level, the voltage is reduced, the frequency of the designed pulse voltage is greater than RC charging and discharging constants of the resistor R24, the resistor R2, the second capacitor C3, the third capacitor C10 and the fourth capacitor C2, the voltage of the fourth capacitor C2 is lower than a first fixed voltage of the positive input end of the first voltage comparator U1 when the pulse is at a high level, the output of the first voltage comparator U1 is at a high level, the on-state of the second MOS transistor Q1 depends on the high level state of the HEAT pulse waveform, and the electrothermal element is synchronously heated at the high level of the pulse.

When HEAT is always at a high level, vheoto is about the first voltage, that is, vheoto is at a high level, the voltage charges the second capacitor C3, the third capacitor C10 and the fourth capacitor C2 slowly through the resistor R24 (adopting 750K Ω) with a large resistance to the current loop formed by the second capacitor C3, the third capacitor C10, the resistor R2 and the fourth capacitor C2, the charging time depends on the RC coefficient formed by the resistor R24, the resistor R2, the second capacitor C3, the third capacitor C10 and the fourth capacitor C2, and the voltage at two ends of the fourth capacitor C2 rises slowly. In the first passageway of first voltage comparator U1, the positive direction input passes through resistance R4, resistance R3 carries out the partial pressure to VCC, when C2 both ends voltage rose and surpassed first fixed voltage, first voltage comparator U1 output is the low level, fourth triode Q2 switches on, second MOS pipe Q1 is because of the grid is the low level and ends, electric heating element R9 and second MOS pipe Q1, third MOS pipe Q3 can not form the current loop, electric heating element can not heat promptly.

When HEAT is always at a low level, vheoto is about 0V, the output of the first voltage comparator U1 is at a high level, the fourth transistor Q2 is turned off, the second MOS transistor Q1 is at a low level due to the pull-down resistor R8 at the gate, and the electric heating element R9, the second MOS transistor Q1, and the third MOS transistor Q3 cannot form a current loop, that is, the electric heating element cannot HEAT.

By heating the electric heating element through the above content, the HEAT has to be a pulse voltage waveform with a set frequency, the electric heating element can HEAT, and the circuit system protection can be carried out on the overheat danger caused by the fact that the HEAT signal is abnormal and is always high level due to the fact that the control program is invalid in operation.

The schemes and principles of the input power control module, the program heating control module and the program heating control protection module are described above, fig. 3 and 4 show the input power control module and the program heating control module respectively, fig. 5 and 6 show the program heating control protection module, and in order to more intuitively show the connection relationship among the three modules, the three modules are integrated in fig. 7.

The embodiment of the utility model provides another kind of temperature control system who has temperature detection function still is provided, including semiconductor refrigeration piece module, full-bridge drive module, the temperature detection module and the refrigeration piece processing module that any embodiment provided as above that have load connection face; the refrigerating piece processing module is used for controlling the semiconductor refrigerating piece module and the full-bridge driving module to form a refrigerating circuit and a heating circuit or be disconnected, wherein in the refrigerating circuit, a load connecting surface is used for refrigerating, and in the heating circuit, the load connecting surface is used for heating; the temperature detection module is used for generating a thermoelectric signal according to the temperature of the load connecting surface, and the refrigerating sheet processing module calculates the actual temperature of the load connecting surface according to the thermoelectric signal. The temperature control system with the temperature detection function can refrigerate and heat and is suitable for refrigerating devices, heating devices or devices with requirements on refrigeration and heating.

In some embodiments, the semiconductor chilling plate module comprises a plurality of semiconductor chilling plates arranged in series, and the load connection surface is located at the cold end of the semiconductor chilling plate. The load connecting surface can be formed by the surface of the cold end of the semiconductor refrigerating sheet or the surface of a temperature conducting material, the temperature conducting material is connected with the surface of the cold end of each semiconductor refrigerating sheet, and the load connecting surface is positioned on one surface close to the semiconductor refrigerating sheet. The semiconductor refrigeration piece module refrigerates and produces produced energy and transmits away through the load of connecting the semiconductor refrigeration piece module, and the load is connected the face and is used for connecting the load, and the load is connected the face and can the lug connection with the load, also can indirectly connect, and the load is connected the face and can be laminated with the load, also can be close to the load, sets up little clearance between the two.

The temperature adjusting range of the load connecting surface is-20 ℃ to 120 ℃, in other words, in the refrigerating circuit, the semiconductor refrigerating sheet module can refrigerate to 20 ℃ below zero, in the heating circuit, the semiconductor refrigerating sheet module can heat to 120 ℃ above zero, and the temperature control system with the temperature detecting function can be suitable for any scene in the temperature range.

The refrigerating sheet processing module is used for realizing the control function of the temperature control system with the temperature detection function, and can comprise one or more chips capable of running programs, such as a CPU, an MCU, a DSP, an SOC and a singlechip. Refrigeration piece processing module is used for exporting first signal of telecommunication and second signal of telecommunication, first signal of telecommunication and second signal of telecommunication directly or indirectly are used as two input signal of full-bridge drive module, refrigeration return circuit or heating return circuit just can switch on when first signal of telecommunication and second signal of telecommunication all satisfy the condition, semiconductor refrigeration piece module just can refrigerate or heat, otherwise refrigeration return circuit or heating return circuit disconnection, semiconductor refrigeration piece module is out of work, when the system appears unusually, one or two in first signal of telecommunication and the second signal of telecommunication are adjusted to refrigeration piece processing module, just can break refrigeration return circuit and heating return circuit, guarantee the safety of semiconductor refrigeration piece module.

The full-bridge driving module is used for controlling the direction of current passing through the semiconductor chilling plate module. The full-bridge driving module comprises a first half-bridge unit and a second half-bridge unit, the first half-bridge unit and the second half-bridge unit are directly or indirectly controlled through the refrigerating sheet processing module, the first half-bridge unit is controlled through a first electric signal, and the second half-bridge unit is controlled through a second electric signal. The combination of the first electric signal and the second electric signal is different, so that the current flows in different directions, and the direction of the current passing through the semiconductor chilling plate module is controlled. When the current flows to the second half-bridge unit from the first half-bridge unit through the semiconductor chilling plate module, the semiconductor chilling plate module chills, and when the current flows to the first half-bridge unit from the second half-bridge unit through the semiconductor chilling plate module, the semiconductor chilling plate module heats.

With continued reference to fig. 8, the first half-bridge unit includes a first half-bridge driver, a fifth MOS transistor Q9, and a sixth MOS transistor Q10, where the first half-bridge driver is configured to control on and off of the fifth MOS transistor Q9 and on and off of the sixth MOS transistor Q10 according to a first electrical signal; when the fifth MOS tube Q9 is conducted, the semiconductor chilling plate module is communicated with the positive electrode of the power supply, and when the sixth MOS tube Q10 is conducted, the semiconductor chilling plate module is communicated with the negative electrode of the power supply.

With reference to fig. 9, the second half-bridge unit includes a second half-bridge driver, a seventh MOS transistor Q11 and an eighth MOS transistor Q12, the second half-bridge driver is configured to control on and off of the seventh MOS transistor Q11 and on and off of the eighth MOS transistor Q12, when the seventh MOS transistor Q11 is turned on, the semiconductor chilling plate module is communicated with the positive electrode of the power supply (12V is adopted in this embodiment), and when the eighth MOS transistor Q12 is turned on, the semiconductor chilling plate module is communicated with the negative electrode of the power supply.

Semiconductor refrigeration piece has just, the branch of burden, it is corresponding, it has positive end and negative terminal to limit semiconductor refrigeration piece module according to semiconductor refrigeration piece, the positive terminal of first half-bridge unit connection semiconductor refrigeration piece module, the negative terminal of second half-bridge unit connection semiconductor refrigeration piece module, when fifth MOS pipe Q9 and eighth MOS pipe Q12 switch on simultaneously, power supply's positive pole, fifth MOS pipe Q9, semiconductor refrigeration piece module, the negative pole of eighth MOS pipe Q12 and power supply forms the refrigeration return circuit, semiconductor refrigeration piece module refrigeration. When the sixth MOS transistor Q10 and the seventh MOS transistor Q11 are turned on simultaneously, the positive electrode of the power supply, the seventh MOS transistor Q11, the semiconductor chilling plate module, the sixth MOS transistor Q10, and the negative electrode of the power supply form a heating loop, and the semiconductor chilling plate module heats. In addition, under the two conditions that the fifth MOS transistor Q9 and the seventh MOS transistor Q11 are simultaneously conducted or the sixth MOS transistor Q10 and the eighth MOS transistor Q12 are simultaneously conducted, the full-bridge driving module and the semiconductor chilling plate module cannot form a loop, and neither heat nor cool is generated.

With continued reference to fig. 8, the first half-bridge driver includes a first half-bridge chip U6, a first charge and discharge circuit, and a first bypass. The first half-bridge chip U6 is used for controlling the fifth MOS pipe Q9 to be conducted and cut off and controlling the sixth MOS pipe Q10 to be conducted and cut off, particularly, the first half-bridge chip U6 controls one of the fifth MOS pipe Q9 and the sixth MOS pipe Q10 to be communicated with the semiconductor refrigerating piece module according to a first electric signal, and in addition, the fifth MOS pipe Q9 and the sixth MOS pipe Q10 cannot be conducted simultaneously. First charge-discharge circuit connects first half bridge chip U6 to be used for making fifth MOS pipe Q9 delay to switch on, thereby when the first signal of telecommunication switched to the low level from the high level, fifth MOS pipe Q9 carries out the time delay earlier and switches on again, avoided in the switching process to make fifth MOS pipe Q9 and sixth MOS pipe Q10 switch on simultaneously and lead to the condition that power supply's positive pole is direct to be connected the power supply negative pole through two MOS pipes because of hardware fault or software failure, thereby improved the security of first half bridge unit. The first bypass is arranged at an input power supply of the first half-bridge chip U6 and used for stabilizing the input power supply, and the first bypass is realized by respectively connecting a capacitor C1 and a capacitor C7 in parallel on the input power supply in specific application.

The first electrical signal may be directly input to the input pin IN of the first half-bridge chip U6, or may be converted into the first control signal and then input to the input pin IN of the first half-bridge chip U6 from the TIM1 CH 1. The pin Vs and the input pin Vb of the first half-bridge chip U6 are used for forming a charge-discharge loop with the first charge-discharge circuit. And a pin Vs of the first half-bridge chip U6 is connected with the first charge-discharge circuit and then is connected with a source electrode of the fifth MOS tube Q9 and a drain electrode of the sixth MOS tube Q10, and then outputs a CH1 OUT signal, wherein a CH1 OUT signal end is used for being directly or indirectly connected with a positive end of the semiconductor chilling plate module. An output pin Ho of the first half-bridge chip U6 is connected with a grid electrode of a fifth MOS tube Q9, and an output pin Lo of the first half-bridge chip U6 is connected with a grid electrode of a sixth MOS tube Q10; the circuit logic of the input pin IN, the output pin Ho and the output pin Lo of the first half-bridge chip U6 is as shown IN fig. 10, when the input pin IN of the first half-bridge chip U6 is at a high level, the output pin Ho of the first half-bridge chip U6 outputs a high level, the output pin Lo of the first half-bridge chip U6 outputs a low level, and when the input pin IN of the first half-bridge chip U6 is at a low level, the output pin Ho of the first half-bridge chip U6 outputs a low level, and the output pin Lo of the first half-bridge chip U6 outputs a high level, IN other words, the output level of the output pin Ho of the first half-bridge chip U6 is the same as the input level of the input pin IN of the first half-bridge chip U6, and the output level of the output pin Lo is opposite to the input level of the input pin IN of the first half-bridge chip U6.

The first charge and discharge circuit may be embodied in the form of a circuit board. The first charge and discharge circuit includes a supply voltage, a diode D1, and a capacitor C14. The power supply voltage is the same as the voltage of the positive electrode of the power supply, and the power supply voltage can be provided by the power supply. The anode of the diode D1 is connected to the supply voltage, the cathode of the diode D1 is connected to the first terminal of the capacitor C14, the input pin Vb of the first half-bridge chip U6 is connected between the diode D1 and the first terminal of the capacitor C14, and the second terminal of the capacitor C14 is connected to the pin Vs of the first half-bridge chip U6.

As shown above, the gate of the fifth MOS transistor Q9 is connected to the input pin Ho of the first half-bridge chip U6, the source of the fifth MOS transistor Q9 is connected to the pin Vs of the first half-bridge chip U6, and the drain of the fifth MOS transistor Q9 is connected to the positive electrode of the power supply for supplying power to the semiconductor chilling plate module. In other words, the fifth MOS transistor Q9 is equivalent to a switch between the positive electrode of the power supply and the semiconductor chilling plate module, when the fifth MOS transistor Q9 is turned on, the positive electrode of the power supply can be communicated with the semiconductor chilling plate module, and when the fifth MOS transistor Q9 is turned off, the positive electrode of the power supply and the semiconductor chilling plate module are in an off state.

As described above, the gate of the sixth MOS transistor Q10 is connected to the input pin Lo of the first half-bridge chip U6, the drain of the sixth MOS transistor Q10 is connected to the input pin Vb of the first half-bridge chip U6, and the source of the sixth MOS transistor Q10 is connected to the negative electrode of the power supply through the resistor R13. In other words, the sixth MOS transistor Q10 is equivalent to a switch between the negative electrode of the power supply and the semiconductor chilling plate module, when the sixth MOS transistor Q10 is turned on, the negative electrode of the power supply can be communicated with the semiconductor chilling plate module, and when the sixth MOS transistor Q10 is turned off, the negative electrode of the power supply and the semiconductor chilling plate module are in an off state.

Since the MOS transistor is voltage-controlled, whether to turn on is determined by the voltage difference between the source and the drain. The first charging and discharging circuit is used for charging when the sixth MOS transistor Q10 is switched on, so that the source electrode of the fifth MOS transistor Q9 obtains voltage, when the sixth MOS transistor Q10 is switched off and the fifth MOS transistor Q9 is tried to be started, the pressure difference between the source electrode and the drain electrode of the fifth MOS transistor Q9 is smaller, at the moment, the first discharging circuit is used for discharging until the pressure difference between the source electrode and the drain electrode of the fifth MOS transistor Q9 meets the switching-on condition. Specifically, when the input pin IN of the first half-bridge chip U6 inputs a low level, the output pin Ho outputs a low level, the output pin Lo outputs a high level, the fifth MOS transistor Q9 is turned off, the sixth MOS transistor Q10 is turned on, the pin Vs of the first half-bridge chip U6 and the second end of the capacitor C14 are grounded through the sixth MOS transistor Q10 and the resistor R13, so that the voltage of the pin Vs of the first half-bridge chip U6 is about 0V, the voltage of the first end of the capacitor C14 is the power supply voltage (12V IN this embodiment), and at this time, the capacitor C14 is charged; when the input of the input pin IN of the first half-bridge chip U6 is switched from the low level to the high level, the sixth MOS transistor Q10 is turned off, the source voltage of the fifth MOS transistor Q9 is approximately equal to the voltage obtained when the capacitor C14 is charged, the capacitor C14 discharges, and the fifth MOS transistor Q9 is turned on when the capacitor C14 discharges to meet the turn-on condition.

With continued reference to fig. 9. The second half-bridge driver includes second half-bridge chip U4 and second charge and discharge circuit, and second half-bridge chip U4 is used for controlling seventh MOS pipe Q11 to switch on and cut off and control eighth MOS pipe Q12 to switch on and cut off, particularly, second half-bridge chip U4 controls one of seventh MOS pipe Q11 and eighth MOS pipe Q12 and semiconductor refrigeration piece module intercommunication according to the second signal of telecommunication, and in addition, seventh MOS pipe Q11 and eighth MOS pipe Q12 can not switch on simultaneously. The second charge-discharge circuit is connected with the second half-bridge chip U4 and is used for enabling the seventh MOS tube Q11 to be conducted in a delayed mode, so that when the second electric signal is switched from a high level to a low level, the seventh MOS tube Q11 is conducted in a delayed mode, the situation that the seventh MOS tube Q11 and the eighth MOS tube Q12 are conducted simultaneously due to hardware faults or software faults in the switching process and the anode of the power supply is directly connected with the cathode of the power supply through the two MOS tubes is avoided, and therefore the safety of the second half-bridge unit is improved. The second bypass is arranged at the input power supply of the second half-bridge chip U4 and used for stabilizing the input power supply, and in specific application, the second bypass is realized by respectively connecting a capacitor C3 and a capacitor C8 in parallel on the input power supply.

The second electrical signal may be directly input to the input pin IN of the second half-bridge chip U4, or may be converted into a second control signal and then input to the input pin IN of the second half-bridge chip U4 from the N-terminal of the TIM1 CH 1. The pin Vs and the input pin Vb of the second half-bridge chip U4 are used for forming a charge-discharge loop with the second charge-discharge circuit. And a pin Vs of the second half-bridge chip U4 is connected with the second charge-discharge circuit and then is also connected with a source electrode of a seventh MOS tube Q11 and a drain electrode of an eighth MOS tube Q12, and then outputs a CH1NOUT signal, and a CH1N OUT signal end is used for being directly or indirectly connected with a negative end of the semiconductor chilling plate module. An output pin Ho of the second half-bridge chip U4 is connected with a grid electrode of the seventh MOS tube Q11, and an output pin Lo of the second half-bridge chip U4 is connected with a grid electrode of the eighth MOS tube Q12; as shown IN fig. 10, when the input pin IN of the second half-bridge chip U4 is at a high level, the output pin Ho of the second half-bridge chip U4 outputs a high level, the output pin Lo of the second half-bridge chip U4 outputs a low level, and when the input pin IN of the second half-bridge chip U4 is at a low level, the output pin Ho of the second half-bridge chip U4 outputs a low level, and the output pin Lo of the second half-bridge chip U4 outputs a high level, IN other words, the output pin Ho of the second half-bridge chip U4 outputs a level that is the same as the input level of the input pin IN of the second half-bridge chip U4, and the output level of the output pin Lo is opposite to the input level of the input pin IN of the second half-bridge chip U4.

The second charge and discharge circuit may be embodied in the form of a circuit board. The second charge and discharge circuit comprises a supply voltage, a diode D4 and a capacitor C15. The supply voltage is the same as the positive voltage of the power supply (12V in this embodiment), and the supply voltage can be provided by the power supply. The anode of the diode D4 is connected to the supply voltage, the cathode of the diode D4 is connected to the first terminal of the capacitor C15, the input pin Vb of the second half-bridge chip U4 is connected between the diode D4 and the first terminal of the capacitor C15, and the second terminal of the capacitor C15 is connected to the pin Vs of the second half-bridge chip U4.

As shown above, the gate of the seventh MOS transistor Q11 is connected to the input pin Ho of the second half-bridge chip U4, the source of the seventh MOS transistor Q11 is connected to the pin Vs of the second half-bridge chip U4, and the drain of the seventh MOS transistor Q11 is connected to the positive electrode of the power supply for supplying power to the semiconductor chilling plate module. In other words, the seventh MOS transistor Q11 is equivalent to a switch between the positive electrode of the power supply and the semiconductor chilling plate module, when the seventh MOS transistor Q11 is turned on, the positive electrode of the power supply can be communicated with the semiconductor chilling plate module, and when the seventh MOS transistor Q11 is turned off, the positive electrode of the power supply and the semiconductor chilling plate module are in an off state.

As described above, the gate of the eighth MOS transistor Q12 is connected to the input pin Lo of the second half-bridge chip U4, the drain of the eighth MOS transistor Q12 is connected to the input pin Vb of the second half-bridge chip U4, and the source of the eighth MOS transistor Q12 is connected to the negative electrode of the power supply via the resistor R14. In other words, the eighth MOS transistor Q12 is equivalent to a switch between the negative electrode of the power supply and the semiconductor cooling chip module, when the eighth MOS transistor Q12 is turned on, the negative electrode of the power supply can be communicated with the semiconductor cooling chip module, and when the eighth MOS transistor Q12 is turned off, the negative electrode of the power supply and the semiconductor cooling chip module are in an off state.

The second charging and discharging circuit charges when the eighth MOS transistor Q12 is turned on, so that the source electrode of the seventh MOS transistor Q11 obtains a voltage, when the eighth MOS transistor Q12 is turned off and an attempt is made to start the seventh MOS transistor Q11, a voltage difference between the source electrode and the drain electrode of the seventh MOS transistor Q11 is relatively small, and at this time, the second discharging circuit discharges until the voltage difference between the source electrode and the drain electrode of the seventh MOS transistor Q11 satisfies a turn-on condition. Specifically, when the input pin IN of the second half-bridge chip U4 inputs a low level, the output pin Ho outputs a low level, the output pin Lo outputs a high level, the seventh MOS transistor Q11 is turned off, the eighth MOS transistor Q12 is turned on, the pin Vs of the second half-bridge chip U4 and the second end of the capacitor C15 are grounded through the eighth MOS transistor Q12 and the resistor R14, so that the voltage of the pin Vs of the second half-bridge chip U4 is about 0V, the voltage of the first end of the capacitor C15 is the supply voltage (12V IN this embodiment), and at this time, the capacitor C15 is charged; when the input of the input pin IN of the second half-bridge chip U4 is switched from the low level to the high level, the eighth MOS transistor Q12 is turned off, the source voltage of the seventh MOS transistor Q11 is approximately equal to the voltage obtained when the capacitor C15 is charged, the capacitor C15 discharges, and the seventh MOS transistor Q11 is turned on when the capacitor C15 discharges to the state that the on condition is satisfied.

In some embodiments, the CH1 OUT terminal of the first half-bridge unit is directly connected to the positive terminal of the semiconductor chilling plate module, and the CH1N OUT terminal of the second half-bridge unit is directly connected to the negative terminal of the semiconductor chilling plate module. In other embodiments, as an alternative, the CH1 OUT terminal and the CH1N OUT terminal are not directly connected to the semiconductor chilling plate module, which is specifically as follows:

as shown in fig. 11, the temperature control system with temperature detection function further includes a first inductor L1, a second inductor L2, a first capacitor C30, and a second capacitor C31; the first inductor L1, the semiconductor refrigerating sheet module and the second inductor L2 are sequentially connected; one end of the first capacitor C30 is connected between the first inductor L1 and the semiconductor chilling plate module, and the other end of the first capacitor C is connected to the negative electrode of a power supply for supplying power to the semiconductor chilling plate module; one end of a second capacitor C31 is connected between the second inductor L2 and the semiconductor chilling plate module, and the other end of the second capacitor C31 is connected to the negative electrode of the power supply; the first inductor L1 is further connected to the CH1 OUT terminal of the first half-bridge unit, and the second inductor L2 is further connected to the CH1N OUT terminal of the second half-bridge unit. In the refrigeration loop, a fifth MOS tube Q9 and an eighth MOS tube Q12 are conducted, and current sequentially passes through the fifth MOS tube Q9, a first inductor L1, a semiconductor refrigeration piece module, a second inductor L2 and the eighth MOS tube Q12 from the positive pole of the power supply to reach the negative pole of the power supply; in the heating loop, the sixth MOS transistor Q10 and the seventh MOS transistor Q11 are turned on, and the current sequentially passes through the sixth MOS transistor Q10, the second inductor L2, the semiconductor chilling plate module, the first inductor L1 and the seventh MOS transistor Q11 from the positive electrode of the power supply to reach the negative electrode of the power supply.

First inductance L1 and first electric capacity C30 form first LC circuit, second inductance L2 and second electric capacity C31 form the second LC circuit, when there is pulse signal in first signal of telecommunication and the second signal of telecommunication, during pulse signal's high level and low level switch, first LC circuit and second LC circuit can slow down the voltage variation at semiconductor refrigeration piece module both ends, reduce the voltage fluctuation condition, the influence of voltage sudden change to the semiconductor refrigeration piece has been reduced to the reliability of system has been improved.

It is obvious to a person skilled in the art that the invention is not restricted to details of the above-described exemplary embodiments, but that it can be implemented in other specific forms without departing from the spirit or essential characteristics of the invention. The present embodiments are therefore to be considered in all respects as illustrative and not restrictive, the scope of the invention being indicated by the appended claims rather than by the foregoing description, and all changes which come within the meaning and range of equivalency of the claims are therefore intended to be embraced therein. Any reference sign in a claim should not be construed as limiting the claim concerned.

Claims

1. The temperature detection module is characterized by comprising a thermistor and an operational amplification unit, wherein the operational amplification unit comprises an upper channel and a lower channel, the upper channel, the lower channel and the thermistor form a constant current source monitoring circuit, and the lower channel is used for amplifying the output of the upper channel and then generating a thermoelectric signal.

2. The temperature sensing module of claim 1, wherein the thermistor employs a positive temperature coefficient or a negative temperature coefficient.

3. The temperature sensing module of claim 1, wherein in the upper channel: the positive phase input is connected with a first power supply voltage, the reverse phase input is connected with a second power supply voltage through a first resistor, the output is connected with the reverse phase input through the thermistor, the thermistor is connected with the first resistor in series, and the first power supply voltage is smaller than the second power supply voltage.

4. The temperature sensing module of claim 3, wherein a first filter capacitor is disposed at the first supply voltage connection and a second filter capacitor is disposed at the second supply voltage connection.

5. The temperature sensing module of claim 4, wherein the first supply voltage and the second supply voltage are standard voltages, and the first resistor has an accuracy of 0.01 Ω.

6. The temperature sensing module of claim 1, wherein the output of the upper channel is connected to the non-inverting input of the lower channel prior to the thermistor;

7. A temperature control system with a temperature detection function is characterized by comprising an electric heating element, a heating subsystem, an electric heating element processing module and a temperature detection module according to any one of claims 1-6;

8. The temperature control system with temperature detection function according to claim 7, wherein the heating subsystem comprises a heating power supply, an input power supply control module and a program heating control module;

9. A temperature control system with a temperature detection function is characterized by comprising a semiconductor refrigerating chip module, a full-bridge driving module, a refrigerating chip processing module and the temperature detection module as claimed in any one of claims 1 to 6;

the refrigerating chip processing module is used for controlling the full-bridge driving module and the semiconductor refrigerating chip module to form a refrigerating circuit or a heating circuit;

10. The temperature control system with temperature detection function as claimed in claim 9, wherein the chilling plate processing module is used for outputting a first electric signal, a second electric signal and a third electric signal;