CN113594359A - Phase change superlattice material and phase change memory unit thereof - Google Patents
Phase change superlattice material and phase change memory unit thereof Download PDFInfo
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices having no potential barriers, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/881—Switching materials
- H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
- H10N70/8828—Tellurides, e.g. GeSbTe
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02D—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN INFORMATION AND COMMUNICATION TECHNOLOGIES [ICT], I.E. INFORMATION AND COMMUNICATION TECHNOLOGIES AIMING AT THE REDUCTION OF THEIR OWN ENERGY USE
- Y02D10/00—Energy efficient computing, e.g. low power processors, power management or thermal management
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Abstract
The application discloses a phase change superlattice material and a phase change memory unit thereof, wherein the phase change superlattice material comprises a semiconductor material layer and a semi-metal material layer, and the semiconductor material layer is (A)xTe1‑x)y(Sb0.4Te0.6)1‑yA layer of said semi-metallic material AxTe1‑xWherein A is one of scandium Sc, yttrium Y, manganese Mn, zinc Zn, cadmium Cd and mercury Hg, x is 0.4-0.7, and Y is 0-0.6. The phase change memory unit prepared based on the semiconductor material layer has higher phase change speed, and can improve the writing operation speed; the phase change memory unit prepared on the basis of the semiconductor material layer and the semi-metal material layer has better logic value distinguishing characteristics, and the usability of the phase change memory unit prepared on the basis of the semiconductor material layer and the semi-metal material layer is effectively improved.
Description
Technical Field
The application relates to the technical field of semiconductor information functional materials, in particular to a phase change superlattice material and a phase change memory unit thereof.
Background
The memory is an important component of the current semiconductor market, is a foundation of information technology, and plays an important role in both life and national economy. The amount of information has increased dramatically with the development of society, and the development of memories with high data storage density has become an important task for memory researchers. Among them, the phase change memory has the advantages of high-speed reading, high erasable times, non-volatility, small element size, low power consumption, strong shock resistance, radiation resistance and the like, and is considered by the international association for semiconductor industry to be the most likely to replace the current flash memory and become the mainstream product of the future memory and the device which is the commercial product at first. In phase change memories, the reversible transition of a phase change material between amorphous and polycrystalline is exploited to achieve the above-mentioned resistance change. The commonly used phase change storage material systems mainly comprise Ge-Sb-Te, Si-Sb-Te, Ag-In-Sb-Te and the like. However, the current phase change memory material system has the problems that the distribution range of the resistance of the device is not concentrated and the logical values '0' and '1' are not easily distinguished due to low writing operation speed and large resistance fluctuation, so that the usability of the phase change memory unit formed based on the current phase change memory material system is low.
Disclosure of Invention
The present disclosure provides a phase change superlattice material and a phase change memory cell thereof, and aims to solve the technical problem of low usability of a phase change memory cell formed based on a current phase change memory material system.
To achieve the above object, the embodiments of the present application provide a phase-change superlattice material, which comprises a semiconductor material layer and a semi-metal material layer, wherein the semiconductor material layer is (a)xTe1-x)y(Sb0.4Te0.6)1-yThe semi-metal material layer is AxTe1-xWherein A is one of scandium Sc, yttrium Y, manganese Mn, zinc Zn, cadmium Cd and mercury Hg, x is 0.4-0.7, and Y is 0-0.6.
Optionally, the layers of semiconductor material are stacked alternately with the layers of semi-metallic material between 5 and 20 times.
Optionally, the initial state of the semiconductor material layer is a metastable cubic phase crystal structure.
Optionally, the semi-metallic material layer has the same cubic phase crystal structure as the semiconductor material layer.
Optionally, the thickness of the semiconductor material layer is 0nm to 20 nm.
To achieve the above object, the present application further provides a phase change memory cell, which includes a bottom electrode, a top electrode, and the above phase change superlattice material, wherein the phase change superlattice material is disposed between the bottom electrode and the top electrode; wherein the material of the bottom electrode comprises any one of Al, W and TiN, and the material of the top electrode comprises any one of Al, W and TiN.
Optionally, the phase change memory cell further comprises a substrate and a dielectric coating layer, wherein the material of the dielectric coating layer comprises silicon dioxide (SiO)2And silicon nitride Si3N4Any one of them.
Optionally, the bottom electrode is disposed on the substrate, and the dielectric coating layer covers peripheries of the bottom electrode, the phase-change superlattice material, and the top electrode.
Optionally, the phase change memory cell is a confined structure phase change memory cell or a T-structure phase change memory cell.
The embodiment of the application provides a phase-change superlattice material and a phase-change memory unit thereof, wherein the phase-change superlattice material comprises a semiconductor material layer and a semi-metal material layer, and the semiconductor material layer is (A)xTe1-x)y(Sb0.4Te0.6)1-yA layer of said semi-metallic material AxTe1-xWherein A is one of scandium Sc, yttrium Y, manganese Mn, zinc Zn, cadmium Cd and mercury Hg, x is 0.4-0.7, and Y is 0-0.6. Layer of semiconductor material (A) in the present applicationxTe1-x)y(Sb0.4Te0.6)1-yContaining A as nucleation centerxTe1-xAnd Sb capable of reversible phase transition repeatedly0.4Te0.6The semiconductor material layer can improve the nucleation speed under the action of the nucleation center, so that the semiconductor material layer has higher phase change speed, the phase change memory unit prepared based on the semiconductor material layer has higher phase change speed, and the writing operation speed can be improved; at the same time, a layer of semimetallic material AxTe1-xThe semiconductor material layer (A) can also be limitedxTe1-x)y(Sb0.4Te0.6)1-yDiffusion, ensuring (A)xTe1-x)y(Sb0.4Te0.6)1-yThe phase change memory unit can realize phase change in a quasi-two-dimensional scale range, effectively solves the problem of high resistance fluctuation easily caused by phase change in a three-dimensional scale range of a phase change material, enables the phase change memory unit prepared based on the semiconductor material layer and the semi-metal material layer to have good logic value distinguishing characteristics, and effectively improves the usability of the phase change memory unit prepared based on the semiconductor material layer and the semi-metal material layer.
Drawings
FIG. 1 is a schematic diagram of a phase change memory cell of the confined structure of the present application;
FIG. 2 is a schematic diagram of a phase change memory cell of the present application having a T-shaped structure;
FIG. 3 is a graph of electrical operating performance of a memory cell based on a compound GST phase change material;
fig. 4 is a graph illustrating the electrical performance of a memory cell based on a phase change superlattice material according to the present application.
The implementation, functional features and advantages of the objectives of the present application will be further explained with reference to the accompanying drawings.
Detailed Description
It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
For a better understanding of the above technical solutions, exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
In order to better understand the technical solution, the technical solution will be described in detail with reference to the drawings and the specific embodiments.
The application provides a phase change superlattice material, which at least comprises a semiconductor material layer with an information storage function and structural propertyThe two materials with larger performance difference can be stable semi-metal material layers, and the semiconductor material layer in the phase-change superlattice material of the embodiment of the application is (A)xTe1-x)y(Sb0.4Te0.6)1-yThe semi-metallic material layer is AxTe1-xWherein te (tellurium) is tellurium, a is one of Sc (Scandium ), Y (Yttrium), Mn (Manganese ), Zn (zinc), Cd (Cadmium), Hg (Hydrargyrum, mercury), for example, if a is Sc, the semiconductor material layer is (Sc)xTe1-x)y(Sb0.4Te0.6)1-yThe semi-metallic material layer is ScxTe1-x(ii) a If A is Y, the semiconductor material layer is (Y)xTe1-x)y(Sb0.4Te0.6)1-yThe semi-metallic material layer is YxTe1-x. x is 0.4 to 0.7, e.g., x is 0.4, 0.5, 0.6, 0.7, etc., and y is 0 to 0.6, e.g., y is 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, etc. For example, if x is 0.5, y is 0.5, and A is Sc, the semiconductor material layer is (Sc)0.5Te0.5)0.6(Sb0.4Te0.6)0.4The semi-metallic material layer is Sc0.5Te0.5。
In the present application, the phase-change superlattice material is formed by alternately stacking a plurality of semiconductor material layers and a plurality of semi-metal material layers, and the stacking frequency is between 5 times and 20 times, for example, the number of times that the semiconductor material layers and the semi-metal material layers are alternately stacked may be 5 times, 10 times, 15 times, 20 times, and the like, and the stacking frequency in this embodiment may preferably be 10 times.
It should be further noted that the initial state of the semiconductor material layer in the phase-change superlattice material of the present application is a cubic phase crystal structure of a metastable state, and the semi-metal material layer is always the same cubic phase crystal structure as the semiconductor material layer. Understandably, Sb of the semiconductor material is formed in the phase-change superlattice material0.4Te0.6The material has two crystal states, namely a metastable cubic phase crystal structure and a stable hexagonal phase crystal structure. This application controls Sb0.4Te0.6The initial state of (A) is a cubic phase crystal structure, let Sb0.4Te0.6Reversible phase transition is performed between the amorphous structure and the cubic phase crystal structure, which requires a higher speed and lower power consumption than phase transition between the amorphous structure and the hexagonal phase crystal structure. Simultaneous cubic phase crystal structure AxTe1-xSb can be further ensured0.4Te0.6Reversible phase changes are made between the amorphous structure and the cubic phase crystal structure. In the semiconductor material layer (A)xTe1-x)y(Sb0.4Te0.6)1-yWith randomly distributed A insidexTe1-xOn the other hand, to further increase AxTe1-xIn the nucleation inducing action of (A)xTe1-x)y(Sb0.4Te0.6)1-yAdjacent position design grows AxTe1-xThe half-metal material layer can improve the phase transition speed of the phase change superlattice material and can improve the writing operation speed of the phase change memory unit prepared based on the semiconductor material layer.
Further, the thickness of the semiconductor material layer in this embodiment is 0nm to 20nm, for example, the thickness of the semiconductor material layer may be 3nm, 5nm, 10nm, 15nm, 20nm, etc., and in this embodiment, 3nm may be preferable; meanwhile, the thickness of the semi-metal material layer in the embodiment is 6nm to 20nm, for example, the thickness of the semi-metal material layer may be 6nm, 8nm, 10nm, 15nm, 18nm, 20nm, and the like, and may be preferably 8nm in the embodiment.
In the first embodiment of the present application, (A)xTe1-x)y(Sb0.4Te0.6)1-yThe thickness of the layer is in the range of 0nm to 20nm, AxTe1-xThe thickness of the layer is in the range of 6nm to 20nm, (A)xTe1-x)y(Sb0.4Te0.6)1-yLayer and AxTe1-xThe number of stacking of the layers is 5 to 20. Specifically, the semi-metal material layer is Y0.5Te0.5Preferably, the thickness is 8 nm; the semiconductor material layer is (Y)0.5Te0.5)0.5(Sb0.4Te0.6)0.5Preferably, the thickness thereof is 3 nm; y is0.5Te0.5And (A)xTe1-x)y(Sb0.4Te0.6)1-yThe number of stacking in between is preferably 10. Meanwhile, the semiconductor material layer and the semi-metal material layer in the phase-change superlattice material are ensured to be in a cubic phase crystal structure through a certain process, so that the phase-change superlattice material is obtained.
In a second embodiment of the present application, the semiconductor material layer is (Sc)0.4Te0.6)0.5(Sb0.4Te0.6)0.5Preferably, the thickness is 5nm, and the semi-metal layer is Sc0.4Te0.6The thickness is preferably 10nm, and the number of stacking is preferably 10. Meanwhile, the semiconductor material layer and the semi-metal material layer in the phase-change superlattice material are ensured to be in a cubic phase crystal structure through a certain process, so that the phase-change superlattice material is obtained.
The application also provides a phase change memory unit, wherein the phase change memory unit at least comprises a bottom electrode, a top electrode and the phase change superlattice material, and the phase change superlattice material can further comprise a substrate and a medium coating layer. The phase change superlattice material is arranged between the bottom electrode and the top electrode. The dielectric coating layer is coated on the periphery of the bottom electrode, the phase change superlattice material and the top electrode.
It should be further noted that, in the present application, the phase change memory cell may be a phase change memory cell with a limited structure or a phase change memory cell with a T-type structure, and the material of the lower electrode in the phase change memory cell includes any one of Al (aluminum), W (Tungsten), and TiN (TiN), for example, the material of the lower electrode may be Al, W, or TiN. The material of the top electrode in the phase change memory unit comprises any one of Al, W and TiN, for example, the material of the top electrode can be Al, W or TiN. The material of the medium coating layer in the phase change memory unit comprises silicon dioxide SiO2And silicon nitride Si3N4In any case, for example, the material of the dielectric coating layer may be silicon dioxide SiO2Or may be silicon nitride Si3N4。
It should be understood that, referring to fig. 1 and fig. 2, fig. 1 is a schematic diagram of a phase change memory cell with a limited structure according to the present application, and fig. 2 is a schematic diagram of a phase change memory cell with a T-type structure according to the present application; in FIG. 1, 1 is a first phase change superlattice material structure, 2 is a second phase change superlattice material structure, and 1(a) is a first phase change superlattice material structurexTe1-x)y(Sb0.4Te0.6)1-yLayer 2(a) is a second (A)xTe1-x)y(Sb0.4Te0.6)1-yLayer, 1(b) is the first AxTe1-xLayer 2(b) is a second AxTe1-xLayer 101 is a top electrode, 102 is a phase change superlattice material, 103 is a bottom electrode, and 104 is a dielectric cladding layer. In FIG. 2, 1 is a first phase change superlattice material structure, 2 is a second phase change superlattice material structure, and 1(a) is a first phase change superlattice material structurexTe1-x)y(Sb0.4Te0.6)1-yLayer 2(a) is a second (A)xTe1-x)y(Sb0.4Te0.6)1-yLayer, 1(b) is the first AxTe1-xLayer 2(b) is a second AxTe1-xLayer 201 is a top electrode, 202 is a phase change superlattice material, 203 is a bottom electrode, and 204 is a dielectric cladding layer. As can be seen from FIGS. 1 and 2, the phase change superlattice material includes a first (A)xTe1-x)y(Sb0.4Te0.6)1-yLayer 1(a) located at the first (A)xTe1-x)y(Sb0.4Te0.6)1-yFirst A on layer 1(a)xTe1-xLayer 1(b) at the first AxTe1-xSecond (A) on layer 1(b)xTe1-x)y(Sb0.4Te0.6)1-yLayer 2(a) located at the second (A)xTe1-x)y(Sb0.4Te0.6)1-ySecond A on layer 2(a)xTe1-x2(b) … … and so on, the structure may be repeated periodically until the desired number of stacks of phase change superlattice material is met. Meanwhile, the semiconductor material layer and the semi-metal material layer in the phase-change superlattice material are fixedThe process of (3) ensures that the initial state is a cubic phase crystal structure.
Referring to FIGS. 3 and 4, FIGS. 3 and 4 are based on the compound GST (Ge)2Sb2Te5) The electrical operating performance graph of a memory cell of phase change material is compared to the electrical operating performance graph of a memory cell of the present application based on phase change superlattice material. In fig. 3, the abscissa represents pulse voltage in V (volt), and the values of the axes include 1, 2, 3, 4, and 5; the ordinate is resistance in Ω (ohm), and the values of the axes include 104、105、106And the three broken lines are respectively the broken lines corresponding to 300ns, 200ns and 100 ns. In fig. 4, the abscissa represents pulse voltage in V (volt), and the values of the axes include 0, 1, and 2; the ordinate is resistance in Ω (ohm), and the values of the axes include 103、104、105、106And the three fold lines are respectively the fold lines corresponding to 30ns, 10ns and 0.8 ns. According to the comparison between fig. 3 and fig. 4, it can be seen that the phase change memory cell of the present application can realize reversible phase change under the action of smaller voltage pulse, the phase change speed is faster, and the high and low resistance value fluctuation is smaller.
In summary, the embodiments of the present application provide a phase change superlattice material and a phase change memory cell thereof, the phase change superlattice material includes a semiconductor material layer and a semi-metal material layer, the semiconductor material layer is (a)xTe1-x)y(Sb0.4Te0.6)1-yA layer of said semi-metallic material AxTe1-xWherein A is one of scandium Sc, yttrium Y, manganese Mn, zinc Zn, cadmium Cd and mercury Hg, x is 0.4-0.7, and Y is 0-0.6. Layer of semiconductor material (A) in the present applicationxTe1-x)y(Sb0.4Te0.6)1-yContaining A as nucleation centerxTe1-xAnd Sb capable of reversible phase transition repeatedly0.4Te0.6The semiconductor material layer can increase the nucleation speed under the action of the nucleation center, so that the semiconductor material layer has higher phase change speed, and the phase change memory cell prepared based on the semiconductor material layer has higher phaseThe speed of the speed change can improve the speed of writing operation; at the same time, a layer of semimetallic material AxTe1-xThe semiconductor material layer (A) can also be limitedxTe1-x)y(Sb0.4Te0.6)1-yDiffusion, ensuring (A)xTe1-x)y(Sb0.4Te0.6)1-yThe phase change memory unit can realize phase change in a quasi-two-dimensional scale range, effectively solves the problem of high resistance fluctuation easily caused by phase change in a three-dimensional scale range of a phase change material, enables the phase change memory unit prepared based on the semiconductor material layer and the semi-metal material layer to have good logic value distinguishing characteristics, and effectively improves the usability of the phase change memory unit prepared based on the semiconductor material layer and the semi-metal material layer.
It should be noted that, in this document, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other like elements in a process, method, article, or apparatus that comprises the element.
The above-mentioned serial numbers of the embodiments of the present application are merely for description and do not represent the merits of the embodiments.
The above description is only a preferred embodiment of the present application, and not intended to limit the scope of the present application, and all modifications of equivalent structures and equivalent processes, which are made by the contents of the specification and the drawings of the present application, or which are directly or indirectly applied to other related technical fields, are included in the scope of the present application.
Claims (10)
1. A phase change superlattice material, wherein said phase change superlattice material comprises a semiconductor material layer and a semi-metallic material layer, said semiconductor material layer is (A)xTe1-x)y(Sb0.4Te0.6)1-yThe semi-metal material layer is AxTe1-xWherein A is one of scandium Sc, yttrium Y, manganese Mn, zinc Zn, cadmium Cd and mercury Hg, x is 0.4-0.7, and Y is 0-0.6.
2. A phase change superlattice material as claimed in claim 1, wherein said semiconductor material layers are alternately stacked with said semi-metallic material layers between 5 and 20 times.
3. A phase change superlattice material as claimed in claim 1, wherein said semiconductor material layer has an initial state which is a metastable cubic phase crystal structure.
4. A phase change superlattice material as recited in claim 1 wherein said layer of semi-metallic material has the same cubic phase crystal structure as said layer of semiconductor material.
5. A phase change superlattice material as claimed in claim 1, wherein said semiconductor material layer has a thickness in the range of 0nm to 20 nm.
6. A phase change superlattice material as claimed in claim 1, wherein said layer of semi-metallic material has a thickness in a range of 6nm to 20 nm.
7. A phase change memory cell comprising a bottom electrode, a top electrode, and the phase change superlattice material as claimed in any one of claims 1-6, wherein the phase change superlattice material is disposed between the bottom electrode and the top electrode; wherein the material of the bottom electrode comprises any one of Al, W and TiN, and the material of the top electrode comprises any one of Al, W and TiN.
8. The phase change memory cell of claim 7, further comprising a substrate and a dielectric capping layer, wherein the dielectric capping layer is ofThe material comprises silicon dioxide SiO2And silicon nitride Si3N4Any one of them.
9. The phase change memory cell of claim 8, wherein the bottom electrode is disposed on the substrate, and the dielectric cladding layer encapsulates the bottom electrode, the phase change superlattice material, and the top electrode.
10. The phase change memory cell of claim 9, wherein the phase change memory cell is a confined structure phase change memory cell or a T-structure phase change memory cell.
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