CN113594306A - Miniature semiconductor light-emitting device and manufacturing method thereof - Google Patents

Miniature semiconductor light-emitting device and manufacturing method thereof Download PDF

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Publication number
CN113594306A
CN113594306A CN202110703955.3A CN202110703955A CN113594306A CN 113594306 A CN113594306 A CN 113594306A CN 202110703955 A CN202110703955 A CN 202110703955A CN 113594306 A CN113594306 A CN 113594306A
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layer
semiconductor
light emitting
semiconductor layer
sub
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颜改革
朱酉良
谭胜友
蒋振宇
闫春辉
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Naweilang Technology Shenzhen Co ltd
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Shenzhen Third Generation Semiconductor Research Institute
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0093—Wafer bonding; Removal of the growth substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/483—Containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0016—Processes relating to electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0025—Processes relating to coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages

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Abstract

The present disclosure relates to the field of semiconductor technologies, and more particularly, to a micro semiconductor light emitting device and a method for manufacturing the same. The micro semiconductor light emitting device includes: the method comprises the steps of transferring a substrate, a first functional layer, a second functional layer and a vertical light emitting diode; the first sub-part and the fourth sub-part form a supporting part which are sequentially stacked on one side of the transfer substrate; the second sub-part and the fifth sub-part form a suspended thin part which is sequentially stacked and is not in contact with the transfer substrate; the third sub-part, the sixth sub-part and the vertical light emitting diode form a suspended light emitting part and are not in contact with the transfer substrate; the top height of the supporting part is less than or equal to the bottom height of the suspended light-emitting part, and the top height of the suspended thin-wall part is less than or equal to the bottom height of the suspended light-emitting part. By the mode, the success rate of transferring the suspended light emitting part can be improved.

Description

Miniature semiconductor light-emitting device and manufacturing method thereof
Technical Field
The present disclosure relates to the field of semiconductor technologies, and more particularly, to a micro semiconductor light emitting device and a method for manufacturing the same.
Background
Micro-LED is a new generation display technology, and compared with the existing OLED technology, the Micro-LED has the advantages of higher brightness, better luminous efficiency and lower power consumption. The display principle of Micro-LED is to design LED structure into thin film, Micro-size and array, and its size is only about 1-100 μm. Transferring the Micro-LEDs to a circuit substrate in a batch manner; and then, the physical deposition process is utilized to complete the protective layer and the upper electrode, so that the upper substrate can be packaged, and the Micro-LED display with a simple structure is completed.
At present, the transfer efficiency and the transfer precision of the Micro-LED are low, so that the production period of the finally manufactured Micro-LED display panel is long and the yield is low.
Disclosure of Invention
The present application provides a micro semiconductor light emitting device and a method for manufacturing the same, which can improve the transfer yield of the micro semiconductor light emitting device.
In order to solve the technical problem, the application adopts a technical scheme that: provided is a method of manufacturing a micro semiconductor light emitting device, including: providing a vertical light emitting diode, wherein the vertical light emitting diode at least comprises a first semiconductor electrode, an epitaxial layer and a second semiconductor electrode which are sequentially stacked; patterning the second semiconductor electrode to expose part of the epitaxial layer; forming a first functional layer, wherein the first functional layer at least covers one side of the epitaxial layer, which is far away from the first semiconductor electrode, and the first functional layer is provided with a first groove to expose part of the second semiconductor electrode; forming a transfer substrate on one side of the first functional layer, which is far away from the epitaxial layer, wherein a sacrificial layer is formed between the transfer substrate and the first functional layer; patterning the vertical light emitting diode to enable the vertical light emitting diode to form a plurality of mesa structures arranged at intervals and expose part of the first functional layer; forming a second functional layer, wherein the second functional layer at least covers one side of the first semiconductor electrode, which is far away from the epitaxial layer, the first side wall of the epitaxial layer and one side of the first functional layer, which is far away from the transfer substrate, and a second notch is formed in the second functional layer to expose part of the first semiconductor electrode; and removing the sacrificial layer to ensure that the vertical light emitting diode, the first functional layer covering the vertical light emitting diode and the second functional layer covering the vertical light emitting diode are not in contact with the transfer substrate.
In order to solve the technical problem, the application adopts a technical scheme that: provided is a micro semiconductor light emitting device including: transferring the substrate; a first functional layer including a first sub-section, a second sub-section and a third sub-section connected in sequence; a second functional layer including a fourth sub-portion, a fifth sub-portion and a sixth sub-portion connected in sequence; the vertical light-emitting diode at least comprises a first semiconductor electrode, an epitaxial layer and a second semiconductor electrode which are sequentially stacked; the first sub-part and the fourth sub-part form a supporting part, and the first sub-part and the fourth sub-part are sequentially stacked on one side of the transfer substrate; the second sub-part and the fifth sub-part form a suspended thin part which is sequentially stacked and is not in contact with the transfer substrate; the third sub-part, the sixth sub-part and the vertical light emitting diode form a suspended light emitting part and are not in contact with the transfer substrate; the top height of the supporting part is less than or equal to the bottom height of the suspended light-emitting part, and the top height of the suspended thin-wall part is less than or equal to the bottom height of the suspended light-emitting part.
(1) Compared with the scheme of secondary substrate transfer and stripping, the method simplifies the manufacturing process and saves the manufacturing cost;
(2) compared with the scheme of manufacturing the common electrode interconnected with the COMS substrate, the transferable micro semiconductor light-emitting device with high flexibility is provided, and the first semiconductor electrode and the second semiconductor electrode can still be flexibly transferred after the first functional layer is bonded with the transfer substrate;
(3) the transferable micro semiconductor light-emitting device with the different sides of the electrodes is prepared, and the technical problems of size reduction, limited light-emitting area and current crowding of the micro semiconductor light-emitting device caused by the same side of the electrodes are solved;
(4) the top height of the supporting part is smaller than or equal to the bottom height of the suspended light emitting part, namely the suspended light emitting part is arranged outside the supporting part/the transfer substrate, when the flexible substrate is transferred, the contact surface between the flexible substrate and the suspended light emitting part is large, the flexible substrate is not contacted with the transfer substrate, and the transfer success rate of the suspended light emitting part is improved;
(5) the edge area of the electrode is protected by the functional layer, so that the corrosion to the electrode when the sacrificial layer is removed can be avoided, and the photoelectric performance and the reliability of the miniature semiconductor light-emitting device are improved;
(6) the functional layer is provided with a part of electrode exposed outside the slot, and the thickness of the semiconductor electrode is less than or equal to that of the functional layer, thereby ensuring the flatness of the functional layer and improving the success rate of subsequent functional layer bonding/adhesion.
Drawings
In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings needed to be used in the description of the embodiments are briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present application, and it is obvious for those skilled in the art to obtain other drawings based on these drawings without creative efforts. Wherein:
FIG. 1 is a schematic structural diagram of a first embodiment of a micro semiconductor light emitting device according to the present application;
FIG. 2 is a schematic structural diagram of a second embodiment of a micro semiconductor light emitting device according to the present application;
FIG. 3 is a schematic structural diagram of a third embodiment of a micro semiconductor light emitting device according to the present application;
FIG. 4 is a schematic structural diagram of a fourth embodiment of a micro-semiconductor light emitting device according to the present application;
FIG. 5 is a schematic flow chart of a method of fabricating the micro semiconductor light emitting device of FIG. 1;
FIG. 6 is a schematic flow chart of a method of fabricating the micro semiconductor light emitting device of FIG. 2;
FIG. 7 is a schematic flow chart of a method of fabricating the micro semiconductor light emitting device of FIG. 3;
fig. 8 is a flow chart illustrating a method of manufacturing the micro semiconductor light emitting device shown in fig. 4.
Detailed Description
Several embodiments of the present application will be described in further detail below with reference to the accompanying drawings. The following description and illustrations of the embodiments do not limit the scope of the present application in any way.
It is to be understood that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the application. It will be further understood that the terms "comprises," "comprising," "includes" and/or "including," when used in this application, specify the presence of stated features, integers, steps, components, and/or components, but do not preclude the presence or addition and/or deletion of one or more other features, integers, steps, components, and/or groups thereof.
Unless otherwise defined, all terms (including technical and scientific terms) used herein have the same meaning as commonly understood by one of ordinary skill in the art to which this application belongs. It will be further understood that terms used herein should be interpreted as having a meaning that is consistent with their meaning in the context of this specification and the relevant art and will not be interpreted in an idealized or overly formal sense unless expressly so defined herein.
In the structure of the conventional vertical Micro-LED chip, the P electrode and the N electrode are positioned on different sides, and each side surface of the chip is only provided with 1 bonding pad, so that the chip size is greatly reduced. However, in the long-term research process, the inventor of the present application found that in the existing manufacturing method of the vertical Micro-LED chip, in the process of bonding the chip with the temporary substrate to manufacture the P electrode or the N electrode, the bonding of the P electrode or the N electrode needs to be performed in a co-polar manner, the manufacturing cost is high, and the transfer is difficult to realize; and the P electrode and the N electrode are manufactured in an independent manner, so that the difficulty of alignment and bonding of the independent electrodes is high, the cost is high, and a pickup and transfer scheme is difficult to realize.
In order to solve the technical problems in the prior art, the present application provides a micro semiconductor light emitting device 10, and the light wave of the micro semiconductor light emitting device 10 may be UVC, UVB, UVA, violet, blue, green, yellow, red, infrared, and the like.
In one embodiment, the present application provides a micro semiconductor light emitting device 10 having a structure as shown in fig. 1, the micro semiconductor light emitting device 10 comprising: a transfer substrate 11, a first functional layer 12, a second functional layer 13, and a vertical type light emitting diode 14. Wherein the vertical light emitting diode 14 is a vertical Micro-LED.
The first functional layer 12 includes a first sub-portion 121, a second sub-portion 122 and a third sub-portion 123, which are sequentially connected.
The second functional layer 13 includes a fourth sub-section 131, a fifth sub-section 132 and a sixth sub-section 133, which are sequentially connected.
The first sub-part 121 and the fourth sub-part 131 constitute a support portion, and are sequentially stacked on one side of the transfer substrate 11. The second sub-portion 122 and the fifth sub-portion 132 constitute a floating thin portion, which are sequentially stacked without contacting the transfer substrate 11. The third sub-portion 123, the sixth sub-portion 133 and the vertical light emitting diode 14 constitute a floating light emitting portion 17 without contacting the transfer substrate 11.
The third sub-portion 123 covers at least a side of the epitaxial layer 142 away from the first semiconductor electrode 141, and the third sub-portion 123 is provided with a first slot to expose a portion of the second semiconductor electrode 143. The sixth sub-portion 133 covers at least a side of the first semiconductor electrode 141 facing away from the epitaxial layer 142, a first sidewall of the epitaxial layer 142, and a side of the first functional layer 12 facing away from the transfer substrate 11, and the sixth sub-portion 133 is provided with a second slot to expose a portion of the first semiconductor electrode 141.
The top height of the supporting portion is less than or equal to the bottom height of the suspended light-emitting portion 17, and the top height of the suspended thin portion is less than or equal to the bottom height of the suspended light-emitting portion 17.
As shown in fig. 5, the method of manufacturing the micro semiconductor light emitting device 10 shown in fig. 1 includes the steps of:
s101: and growing a buffer layer on the growth substrate.
Specifically, the material of the growth substrate includes, but is not limited to, sapphire, aluminum nitride, gallium nitride, silicon carbide, or metal, and the surface structure thereof may be a planar structure or a patterned structure.
In this step, a buffer layer may be grown on one main surface of the growth substrate by a conventional MOCVD process or by means of, for example, physical vapor deposition, sputtering, hydrogen vapor deposition or atomic layer deposition process.
The buffer layer may be used to facilitate single crystal growth of the first semiconductor layer 1421.
The buffer layer can also be used as a stripping sacrificial layer, and the stripping between the buffer layer and the growth substrate can be easily realized by wet etching, dry etching or laser stripping.
S102: an epitaxial layer 142 is formed on the side of the buffer layer facing away from the growth substrate.
Specifically, the epitaxial layer 142 includes a first semiconductor layer 1421, an active layer 1422, and a second semiconductor layer 1423, which are sequentially stacked.
In this step, a Metal-organic Chemical Vapor Deposition (MOCVD) or Molecular Beam Epitaxy (MBE) method may be adopted to sequentially grow the first semiconductor layer 1421, the active layer 1422, and the second semiconductor layer 1423 in an epitaxial growth manner on a side of the buffer layer away from the growth substrate.
S103: a second semiconductor electrode 143 is formed on one side of the epitaxial layer 142.
In this step, the second semiconductor electrode 143 may be formed by metal sputtering (Sputter), Plasma Enhanced Chemical Vapor Deposition (PECVD), electron beam evaporation (e-beam), and the like, which are known in the art, and is not limited thereto.
S104: the buffer layer is used as a stripping sacrificial layer, and the buffer layer is removed to strip the growth substrate from the contact surface of the buffer layer and the growth substrate, and expose the other side of the epitaxial layer 142 away from the second semiconductor layer 1423.
In this step, the buffer layer may be removed by dry etching, wet etching, or a combination thereof, and then the substrate is grown to expose the first semiconductor layer 1421.
S105: the first semiconductor electrode 141 is formed on the other side of the epitaxial layer 142 away from the second semiconductor layer 1423, resulting in the vertical type light emitting diode 14.
In this step, the first semiconductor electrode 141 may be manufactured by metal sputtering (Sputter), Plasma Enhanced Chemical Vapor Deposition (PECVD), electron beam evaporation (e-beam), and the like, which are known in the art, and is not limited thereto.
S106: the second semiconductor electrode 143 is patterned to expose a portion of the epitaxial layer 142.
Specifically, the patterning process includes patterning the second semiconductor electrode 143 from a side of the second semiconductor electrode 143 away from the epitaxial layer 142 to form a number of mesa structures. The second semiconductor electrode 143 may be etched through a mask and etching process, thereby forming a mesa structure.
In this step, the mask may be used as an etching stop layer to control the etching depth, so as to expose the epitaxial layer 142 around the mesa structure. The etching process may include dry etching, wet etching, or a combination thereof.
S107: the first functional layer 12 is formed, wherein the first functional layer 12 covers at least a side of the epitaxial layer 142 away from the first semiconductor electrode 141, and the third sub-portion 123 is provided with a first opening to expose a portion of the second semiconductor electrode 143.
Specifically, the first functional layer 12 has a first opening (i) formed therein to expose a portion of the second semiconductor electrode 143 for facilitating a subsequent bonding or wire bonding process, and the shape of the first opening (i) is not limited in this application and may be, for example, a polygon, a circle, an ellipse, or the like.
S108: a transfer substrate 11 is formed on the side of the first functional layer 12 facing away from the epitaxial layer 142, wherein a sacrificial layer is locally formed between the transfer substrate 11 and the first functional layer 12.
In this step, a sacrificial layer is formed locally on the side of the first functional layer 12 away from the epitaxial layer 142, and then the transfer substrate 11 is formed on the side of the first functional layer 12 away from the epitaxial layer 142 and the side of the sacrificial layer away from the first functional layer 12.
Alternatively, the transfer substrate 11 and the first functional layer 12 may be joined by adhesive or bonding.
S109: the vertical light emitting diode 14 is patterned, so that the vertical light emitting diode 14 forms a plurality of mesa structures arranged at intervals and a part of the first functional layer 12 is exposed.
Specifically, the patterning process includes patterning the vertical type light emitting diode 14 from a side of the vertical type light emitting diode 14 away from the transfer substrate 11 to form several mesa structures. The vertical type light emitting diode 14 may be etched through a mask and etching process to form a mesa structure. It is understood that each mesa formed in this step may be used as an independent led unit.
In this step, the mask may be used as an etching stop layer to control the etching depth, so as to expose the first functional layer 12 at the periphery of the mesa structure. The etching process may include dry etching, wet etching, or a combination thereof.
S110: forming a second functional layer 13, wherein the second functional layer 13 covers at least a side of the first semiconductor electrode 141 facing away from the epitaxial layer 142, a first sidewall of the epitaxial layer 142, and a side of the first functional layer 12 facing away from the transfer substrate 11, and the sixth sub-portion 133 is provided with a second slot to expose a portion of the first semiconductor electrode 141.
Specifically, the second functional layer 13 is provided with a second opening (i) for exposing a portion of the first semiconductor electrode 141 to facilitate a subsequent soldering or wire bonding process, and the shape of the second opening (i) is not limited in this application, and may be, for example, a polygon, a circle, an ellipse, or the like.
S111: the sacrificial layer is removed so that the vertical type light emitting diode 14, the first functional layer 12 covering the vertical type light emitting diode 14, and the second functional layer 13 covering the vertical type light emitting diode 14 are not in contact with the transfer substrate 11.
In this manner, the micro semiconductor light emitting device 10 shown in fig. 1 is manufactured.
In an embodiment, as shown in fig. 2, the structure of the micro semiconductor light emitting device 10 of the present application is that the vertical light emitting diode 14 at least includes a first semiconductor electrode 141, an epitaxial layer 142 and a second semiconductor electrode 143, which are sequentially stacked, the epitaxial layer 142 includes a first semiconductor layer 1421, an active layer 1422 and a second semiconductor layer 1423, which are sequentially stacked, wherein a mesa structure is formed on a side of the first semiconductor layer 1421 facing the second semiconductor layer 1423, and a portion of the first semiconductor layer 1421 is exposed.
The third sub-portion 123 covers a side of the second semiconductor layer 1423 facing away from the first semiconductor layer 1421, an edge region of the second semiconductor electrode 143, a sidewall of the second semiconductor layer 1423, a sidewall of the active layer 1422, and an exposed surface of the first semiconductor layer 1421 on a side close to the active layer 1422.
The sixth sub-portion 133 covers a side of the first functional layer 12 close to the second semiconductor layer 1423, another side wall of the active layer 1422, a side wall of the first semiconductor layer 1421, a side of the first semiconductor layer 1421 away from the second semiconductor layer 1423, an edge region of the first semiconductor electrode 141, and another side wall of the first semiconductor.
As shown in fig. 6, the method of manufacturing the micro semiconductor light emitting device 10 shown in fig. 2 includes the steps of:
s201: and growing a buffer layer on the growth substrate.
Reference is made specifically to the aforementioned step S101.
S202: an epitaxial layer 142 is formed on the side of the buffer layer facing away from the growth substrate.
Reference is made specifically to the aforementioned step S102.
S203: a second semiconductor electrode 143 is formed on one side of the epitaxial layer 142.
Reference is made specifically to the aforementioned step S103.
S204: the buffer layer is used as a stripping sacrificial layer, and the buffer layer is removed to strip the growth substrate from the contact surface of the buffer layer and the growth substrate, and expose the other side of the epitaxial layer 142 away from the second semiconductor layer 1423.
Reference is made specifically to the aforementioned step S104.
S205: a first semiconductor electrode 141 is formed on the other side of the epitaxial layer 142 from the second semiconductor layer 1423.
Reference is made specifically to the aforementioned step S105.
S206: the second semiconductor layer 1423 is etched to the first semiconductor layer 1421, so that a mesa structure is formed on the first semiconductor layer 1421 facing the second semiconductor layer 1423, and a portion of the first semiconductor layer 1421 is exposed.
S207: the second semiconductor electrode 143 is patterned to expose a portion of the epitaxial layer 142.
Reference is made specifically to the aforementioned step S106.
S208: a first functional layer 12 is formed, wherein the first functional layer 12 covers a side of the second semiconductor layer 1423 facing away from the first semiconductor layer 1421, an edge region of the second semiconductor electrode 143, a sidewall of the second semiconductor layer 1423, a sidewall of the active layer 1422, and an exposed surface of the first semiconductor layer 1421 on a side close to the active layer 1422.
Specifically, the first functional layer 12 has a first opening (i) formed therein to expose a portion of the second semiconductor electrode 143 for facilitating a subsequent bonding or wire bonding process, and the shape of the first opening (i) is not limited in this application and may be, for example, a polygon, a circle, an ellipse, or the like.
S209: a transfer substrate 11 is formed on the side of the first functional layer 12 facing away from the epitaxial layer 142, wherein a sacrificial layer is locally formed between the transfer substrate 11 and the first functional layer 12.
Refer to step S108 above specifically.
S210: the vertical light emitting diode 14 is patterned, so that the vertical light emitting diode 14 forms a plurality of mesa structures arranged at intervals and a part of the first functional layer 12 is exposed.
Reference is made specifically to the aforementioned step S109.
S211: forming a second functional layer 13, wherein the second functional layer 13 covers one side of the first functional layer 12 close to the second semiconductor layer 1423, the other side wall of the active layer 1422, one side wall of the first semiconductor layer 1421, one side of the first semiconductor layer 1421 away from the second semiconductor layer 1423, an edge region of the first semiconductor electrode 141, and the other side wall of the first semiconductor.
Specifically, the second functional layer 13 is provided with a second opening (i) for exposing a portion of the first semiconductor electrode 141 to facilitate a subsequent soldering or wire bonding process, and the shape of the second opening (i) is not limited in this application, and may be, for example, a polygon, a circle, an ellipse, or the like.
S212: the sacrificial layer is removed so that the vertical type light emitting diode 14, the first functional layer 12 covering the vertical type light emitting diode 14, and the second functional layer 13 covering the vertical type light emitting diode 14 are not in contact with the transfer substrate 11.
In this manner, the micro semiconductor light emitting device 10 shown in fig. 2 is manufactured.
In an embodiment, as shown in fig. 3, the structure of the micro semiconductor light emitting device 10 of the present application is that the vertical light emitting diode 14 at least includes a first semiconductor electrode 141, an epitaxial layer 142 and a second semiconductor electrode 143, which are sequentially stacked, the epitaxial layer 142 includes a first semiconductor layer 1421, an active layer 1422 and a second semiconductor layer 1423, which are sequentially stacked, and an edge of the first semiconductor layer 1421 is aligned with an edge of the active layer 1422 and an edge of the second semiconductor layer 1423.
The third sub-portion 123 covers a side of the second semiconductor layer 1423 facing away from the first semiconductor layer 1421, an edge region of the second semiconductor electrode 143, a sidewall of the second semiconductor layer 1423, and a sidewall of the active layer 1422.
The sixth sub-portion 133 covers a side of the third sub-portion 123 close to the second semiconductor layer 1423, another side wall of the active layer 1422, a first side wall of the first semiconductor, a side of the first semiconductor layer 1421 away from the second semiconductor layer 1423, an edge region of the first semiconductor electrode 141, another side wall of the first semiconductor, and a side of the third sub-portion 123 close to the first semiconductor layer 1421.
As shown in fig. 7, the method of manufacturing the micro semiconductor light emitting device 10 shown in fig. 3 includes the steps of:
s301: and growing a buffer layer on the growth substrate.
Reference is made specifically to the aforementioned step S101.
S302: an epitaxial layer 142 is formed on the side of the buffer layer facing away from the growth substrate.
Reference is made specifically to the aforementioned step S102.
S303: a second semiconductor electrode 143 is formed on one side of the epitaxial layer 142.
Reference is made specifically to the aforementioned step S103.
S304: the buffer layer is used as a stripping sacrificial layer, and the buffer layer is removed to strip the growth substrate from the contact surface of the buffer layer and the growth substrate, and expose the other side of the epitaxial layer 142 away from the second semiconductor layer 1423.
Reference is made specifically to the aforementioned step S104.
S305: a first semiconductor electrode 141 is formed on the other side of the epitaxial layer 142 from the second semiconductor layer 1423.
Reference is made specifically to the aforementioned step S105.
S306: the second semiconductor electrode 143 is patterned to expose a portion of the epitaxial layer 142.
Reference is made specifically to the aforementioned step S106.
S307: a first functional layer 12 is formed, wherein the first functional layer 12 covers a side of the second semiconductor layer 1423 facing away from the first semiconductor layer 1421, an edge region of the second semiconductor electrode 143, a sidewall of the second semiconductor layer 1423, and a sidewall of the active layer 1422.
Specifically, the first functional layer 12 has a first opening (i) formed therein to expose a portion of the second semiconductor electrode 143 for facilitating a subsequent bonding or wire bonding process, and the shape of the first opening (i) is not limited in this application and may be, for example, a polygon, a circle, an ellipse, or the like.
S308: a transfer substrate 11 is formed on the side of the first functional layer 12 facing away from the epitaxial layer 142, wherein a sacrificial layer is locally formed between the transfer substrate 11 and the first functional layer 12.
Refer to step S108 above specifically.
S309: the vertical light emitting diode 14 is patterned, so that the vertical light emitting diode 14 forms a plurality of mesa structures arranged at intervals and a part of the first functional layer 12 is exposed.
Reference is made specifically to the aforementioned step S109.
S310: the exposed portion of the first semiconductor layer 1421 is removed so that the edge of the first semiconductor layer 1421 is aligned with the edge of the active layer 1422.
Specifically, the exposed portion of the first semiconductor layer 1421 may be removed through a mask and etching process so that an edge of the first semiconductor layer 1421 is aligned with an edge of the active layer 1422.
S311: forming a second functional layer 13, wherein the second functional layer 13 covers one side of the first functional layer 12 close to the second semiconductor layer 1423, the other side wall of the active layer 1422, the first side wall of the first semiconductor, one side of the first semiconductor layer 1421 away from the second semiconductor layer 1423, the edge region of the first semiconductor electrode 141, the other side wall of the first semiconductor, and one side of the first functional layer 12 close to the first semiconductor layer 1421.
Specifically, the second functional layer 13 is provided with a second opening (i) for exposing a portion of the first semiconductor electrode 141 to facilitate a subsequent soldering or wire bonding process, and the shape of the second opening (i) is not limited in this application, and may be, for example, a polygon, a circle, an ellipse, or the like.
S312: the sacrificial layer is removed so that the vertical type light emitting diode 14, the first functional layer 12 covering the vertical type light emitting diode 14, and the second functional layer 13 covering the vertical type light emitting diode 14 are not in contact with the transfer substrate 11.
In this manner, the micro semiconductor light emitting device 10 shown in fig. 3 is manufactured.
In an embodiment, as shown in fig. 4, the structure of the micro semiconductor light emitting device 10 of the present application is that the vertical light emitting diode 14 at least includes a first semiconductor electrode 141, an epitaxial layer 142 and a second semiconductor electrode 143, which are sequentially stacked, the epitaxial layer 142 includes a first semiconductor layer 1421, an active layer 1422 and a second semiconductor layer 1423, which are sequentially stacked, and an edge of the first semiconductor layer 1421 is aligned with an edge of the active layer 1422 and an edge of the second semiconductor layer 1423.
The third sub-portion 123 covers a side of the second semiconductor layer 1423 facing away from the first semiconductor layer 1421 and an edge region of the second semiconductor electrode 143.
The sixth sub-portion 133 covers the side of the first functional layer 12 close to the second semiconductor layer 1423, the side wall of the active layer 1422, the side wall of the first semiconductor, the side of the first semiconductor layer 1421 away from the second semiconductor layer 1423, the edge region of the first semiconductor electrode 141, and the side of the third sub-portion 123 close to the first semiconductor layer 1421.
As shown in fig. 8, the method of manufacturing the micro semiconductor light emitting device 10 shown in fig. 4 includes the steps of:
s401: and growing a buffer layer on the growth substrate.
Reference is made specifically to the aforementioned step S101.
S402: an epitaxial layer 142 is formed on the side of the buffer layer facing away from the growth substrate.
Reference is made specifically to the aforementioned step S102.
S403: a second semiconductor electrode 143 is formed on one side of the epitaxial layer 142.
Reference is made specifically to the aforementioned step S103.
S404: the buffer layer is used as a stripping sacrificial layer, and the buffer layer is removed to strip the growth substrate from the contact surface of the buffer layer and the growth substrate, and expose the other side of the epitaxial layer 142 away from the second semiconductor layer 1423.
Reference is made specifically to the aforementioned step S104.
S405: a first semiconductor electrode 141 is formed on the other side of the epitaxial layer 142 from the second semiconductor layer 1423.
Reference is made specifically to the aforementioned step S105.
S406: the second semiconductor electrode 143 is patterned to expose a portion of the epitaxial layer 142.
Reference is made specifically to the aforementioned step S106.
S407: the first functional layer 12 is formed, wherein the first functional layer 12 covers a side of the second semiconductor layer 1423 facing away from the first semiconductor layer 1421, and an edge region of the second semiconductor electrode 143.
Specifically, the first functional layer 12 has a first opening (i) formed therein to expose a portion of the second semiconductor electrode 143 for facilitating a subsequent bonding or wire bonding process, and the shape of the first opening (i) is not limited in this application and may be, for example, a polygon, a circle, an ellipse, or the like.
S408: a transfer substrate 11 is formed on the side of the first functional layer 12 facing away from the epitaxial layer 142, wherein a sacrificial layer is locally formed between the transfer substrate 11 and the first functional layer 12.
Refer to step S108 above specifically.
S409: the vertical light emitting diode 14 is patterned, so that the vertical light emitting diode 14 forms a plurality of mesa structures arranged at intervals and a part of the first functional layer 12 is exposed.
Reference is made specifically to the aforementioned step S109.
S410: the exposed portion of the first semiconductor layer 1421 is removed so that the edge of the first semiconductor layer 1421 is aligned with the edge of the active layer 1422.
Specifically, the exposed portion of the first semiconductor layer 1421 may be removed through a mask and etching process so that an edge of the first semiconductor layer 1421 is aligned with an edge of the active layer 1422.
S411: forming a second functional layer 13, wherein the second functional layer 13 covers a side of the first functional layer 12 close to the second semiconductor layer 1423, a side wall of the active layer 1422, a side wall of the first semiconductor layer 1421, a side of the first semiconductor layer 1421 away from the second semiconductor layer 1423, an edge region of the first semiconductor electrode 141, and a side of the first functional layer 12 close to the first semiconductor layer 1421.
Specifically, the second functional layer 13 is provided with a second opening (i) for exposing a portion of the first semiconductor electrode 141 to facilitate a subsequent soldering or wire bonding process, and the shape of the second opening (i) is not limited in this application, and may be, for example, a polygon, a circle, an ellipse, or the like.
S412: the sacrificial layer is removed so that the vertical type light emitting diode 14, the first functional layer 12 covering the vertical type light emitting diode 14, and the second functional layer 13 covering the vertical type light emitting diode 14 are not in contact with the transfer substrate 11.
In this manner, the micro semiconductor light emitting device 10 shown in fig. 4 is manufactured.
In some embodiments, the thickness of the second semiconductor electrode 143 is less than or equal to the thickness of the third sub-portion 123, and the thickness of the first semiconductor electrode 141 is less than or equal to the thickness of the sixth sub-portion 133.
In some embodiments, the hanging thin-wall portion is used as a cut-off portion to separate the support portion and the hanging light emitting portion 17 so as to transfer the hanging light emitting portion 17 onto the flexible substrate, wherein the sixth sub-portion 133 in the hanging light emitting portion 17 can be adhered or bonded with the flexible substrate.
In some embodiments, the suspended thin wall portion is provided with a breaking groove.
In some embodiments, the thickness of the suspended thin-wall portion is 0.1 μm to 10 μm, and the width of the suspended light-emitting portion 17 is 1 μm to 200 μm.
In certain embodiments, the material of the first functional layer 12 and/or the second functional layer 13 comprises at least one of a metal, a metal alloy, an insulating material, a cured resin, a semiconductor material. The first functional layer 12 and the second functional layer 13 may be manufactured by coating, bonding, metal sputtering (Sputter), Plasma Enhanced Chemical Vapor Deposition (PECVD), electron beam evaporation (e-beam), and the like, which are known in the art, and are not limited thereto.
In some embodiments, the material of the transfer substrate 11 includes, but is not limited to, sapphire, aluminum nitride, gallium nitride, silicon carbide, or metal, and the surface structure thereof may be a planar structure or a patterned structure.
In some embodiments, when the first semiconductor layer 1421 is a P-type semiconductor layer, the second semiconductor layer 1423 can be an N-type semiconductor layer with different conductivity, whereas when the first semiconductor layer 1421 is an N-type semiconductor layer, the second semiconductor layer 1423 can be a P-type semiconductor layer with different conductivity. The active layer 1422 may be a neutral, P-type, or N-type conductivity semiconductor. When a current is applied through the vertical light emitting diode 14, the active layer 1422 is activated to emit light.
In some embodiments, the first semiconductor layer 1421 may be an N-type semiconductor layer, which mainly functions to provide electrons for recombination light emission, and may be a semiconductor doped with at least one of Si, Ge, and Sn (e.g., GaN, AlGaN, InGaN, AlN, GaAs, etc.).
In some embodiments, the active layer 1422 is an electron-hole recombination region, and may have a structure of a single heterojunction, a double heterojunction, a single quantum hydrazine, and a multiple quantum hydrazine.
In some embodiments, the second semiconductor layer 1423 is a P-type semiconductor layer, which mainly functions to provide holes for recombination of light emission, and particularly may Be a semiconductor doped with at least one of Mg, Zn, Be, Ca, Sr, and Ba (e.g., GaN, AlGaN, InGaN, AlN, GaAs, etc.).
In some embodiments, the first and second semiconductor layers 1421 and 1423 may be intrinsic semiconductor layers, and the first and second semiconductor layers 1421 and 1423 may function as current diffusion layers themselves while providing electrons or holes.
In some embodiments, the first and second semiconductor electrodes 141 and 143 may be formed of various well-conducting materials known in the art, such as ITO, Au, Ti, Al, Ag, Cu, Ni, Cr, etc., or alloys thereof, but not limited thereto. Also, the first and second semiconductor electrodes 141 and 143 may be formed by metal sputtering (Sputter), Plasma Enhanced Chemical Vapor Deposition (PECVD), electron beam evaporation (e-beam), and the like, which are known in the art, and are not limited thereto.
In some embodiments, the vertical light emitting diode 14 includes a first semiconductor electrode 141, a first semiconductor reflective layer, a first semiconductor layer 1421, an active layer 1422, a second semiconductor layer 1423, a second semiconductor reflective layer, and a second semiconductor electrode 143, which are sequentially stacked.
Specifically, the first semiconductor reflective layer forms a good P-type ohmic contact with the first semiconductor layer 1421, and the second semiconductor reflective layer forms a good N-type ohmic contact with the second semiconductor layer 1423.
The first and second semiconductor reflective layers may be made of a metal material, a mixture or a compound doped with a metal material, a Transparent material or an opaque material, for example, the first and second semiconductor reflective layers may be a Transparent Conductive Oxide (TCO) layer, such as an Indium Tin Oxide (ITO) layer or a zinc Oxide (ZnO) layer, or a single layer or a stacked layer made of any one metal of nickel (Ni), chromium (Cr), titanium (Ti), aluminum (Al), silver (Ag), platinum (Pt), gold (Au), tin (Sn) or indium (In), or an alloy of any two or more of them.
The first and second semiconductor reflective layers can be formed by metal sputtering (Sputter), Plasma Enhanced Chemical Vapor Deposition (PECVD), electron beam evaporation (e-beam), and the like, which are known in the art, and are not limited thereto.
In some embodiments, the vertical light emitting diode 14 includes a first semiconductor electrode 141, a first transparent current diffusion layer, a first semiconductor layer 1421, an active layer 1422, a second semiconductor layer 1423, a second transparent current diffusion layer, and a second semiconductor electrode 143, which are sequentially stacked.
Specifically, the main purpose of the first transparent current spreading layer is to improve the uniformity of current spreading of the first semiconductor layer 1421, and a transparent material (e.g., ITO) having a conductivity greater than that of the first semiconductor layer 1421 may be used. The second transparent current diffusion layer mainly aims to improve uniformity of current diffusion of the second semiconductor layer 1423, and a transparent material (e.g., ITO) having a conductivity greater than that of the second semiconductor layer 1423 may be used.
The first transparent current diffusion layer and the second transparent current diffusion layer may be formed by metal sputtering (Sputter), Plasma Enhanced Chemical Vapor Deposition (PECVD), electron beam evaporation (e-beam), and the like, which are known in the art, and are not limited thereto.
In some embodiments, the vertical light emitting diode 14 includes a first semiconductor electrode 141, a conductive substrate, a first semiconductor layer 1421, an active layer 1422, a second semiconductor layer 1423, a transparent current spreading layer, and a second semiconductor electrode 143, which are sequentially stacked.
In some embodiments, the material of the transfer substrate 11 may be at least one of sapphire, aluminum nitride, gallium nitride, silicon carbide, or metal.
In some embodiments, the material of the sacrificial layer may be at least one of a semiconductor material, an insulating dielectric material, a metal material, and a specific organic easily soluble material. Wherein the semiconductor material may be Si<111>Amorphous Si, etc. The insulating dielectric material may be, for example, SiO2、SixNyEtc., the metal may be Ti, Al, Cu, etc., and the specific organic easily-soluble material may be a cured resin, photosensitive SU8, etc.
Different from the prior art, the application has the following beneficial effects:
(1) compared with the scheme of secondary substrate transfer and stripping, the method simplifies the manufacturing process and saves the manufacturing cost;
(2) compared with the scheme of manufacturing the common electrode interconnected with the COMS substrate, the transferable micro semiconductor light-emitting device with high flexibility is provided, and the first semiconductor electrode and the second semiconductor electrode can still be flexibly transferred after the first functional layer is bonded with the transfer substrate;
(3) the transferable micro semiconductor light-emitting device with the different sides of the electrodes is prepared, and the technical problems of size reduction, limited light-emitting area and current crowding of the micro semiconductor light-emitting device caused by the same side of the electrodes are solved;
(4) the top height of the supporting part is smaller than or equal to the bottom height of the suspended light emitting part, namely the suspended light emitting part is arranged outside the supporting part/the transfer substrate, when the flexible substrate is transferred, the contact surface between the flexible substrate and the suspended light emitting part is large, the flexible substrate is not contacted with the transfer substrate, and the transfer success rate of the suspended light emitting part is improved;
(5) the edge area of the electrode is protected by the functional layer, so that the corrosion to the electrode when the sacrificial layer is removed can be avoided, and the photoelectric performance and the reliability of the miniature semiconductor light-emitting device are improved;
(6) the functional layer is provided with a part of electrode exposed outside the slot, and the thickness of the semiconductor electrode is less than or equal to that of the functional layer, thereby ensuring the flatness of the functional layer and improving the success rate of subsequent functional layer bonding/adhesion.
The above description is only for the purpose of illustrating embodiments of the present application and is not intended to limit the scope of the present application, and all modifications of equivalent structures and equivalent processes, which are made by the contents of the specification and the drawings of the present application or are directly or indirectly applied to other related technical fields, are also included in the scope of the present application.

Claims (25)

1. A method of fabricating a miniature semiconductor light emitting device, comprising:
providing a vertical light emitting diode, wherein the vertical light emitting diode at least comprises a first semiconductor electrode, an epitaxial layer and a second semiconductor electrode which are sequentially stacked;
patterning the second semiconductor electrode to expose part of the epitaxial layer;
forming a first functional layer, wherein the first functional layer at least covers one side of the epitaxial layer, which is far away from the first semiconductor electrode, and the first functional layer is provided with a first notch to expose part of the second semiconductor electrode;
forming a transfer substrate on one side of the first functional layer, which is far away from the epitaxial layer, wherein a sacrificial layer is formed between the transfer substrate and the first functional layer;
patterning the vertical light emitting diode to enable the vertical light emitting diode to form a plurality of mesa structures arranged at intervals and expose part of the first functional layer;
forming a second functional layer, wherein the second functional layer at least covers one side of the first semiconductor electrode, which is far away from the epitaxial layer, the first side wall of the epitaxial layer and one side of the first functional layer, which is far away from the transfer substrate, and a second notch is arranged on the second functional layer to expose part of the first semiconductor electrode;
removing the sacrificial layer to make the vertical type light emitting diode, the first functional layer covering the vertical type light emitting diode, and the second functional layer covering the vertical type light emitting diode have no contact with the transfer substrate.
2. The method of claim 1, wherein the step of providing a vertical light emitting diode comprises:
and etching the second semiconductor layer to the first semiconductor layer to form a mesa structure on one side of the first semiconductor layer facing the second semiconductor layer and expose part of the first semiconductor layer.
3. The method of claim 2,
the step of forming the first functional layer includes: forming a first functional layer covering one side of the second semiconductor layer, which is far away from the first semiconductor layer, the edge area of the second semiconductor electrode, a first side wall of the second semiconductor layer, a first side wall of the active layer and the exposed surface of the first semiconductor layer, which is close to one side of the active layer;
the step of forming the second functional layer includes: and forming the second functional layer covering one side of the first functional layer close to the second semiconductor layer, the other side wall of the active layer, one side wall of the first semiconductor layer, one side of the first semiconductor layer far away from the second semiconductor layer, the edge area of the first semiconductor electrode and the other side wall of the first semiconductor.
4. The method of claim 2,
the step of forming the first functional layer includes: forming the first functional layer covering one side of the second semiconductor layer, which is far away from the first semiconductor layer, the edge area of the second semiconductor electrode, one side wall of the second semiconductor layer and one side wall of the active layer;
before the step of forming the second functional layer, the method further comprises: removing the exposed part of the first semiconductor layer so that the edge of the first semiconductor layer is aligned with the edge of the active layer;
the step of forming the second functional layer includes: and forming the second functional layer which covers one side of the first functional layer close to the second semiconductor layer, the other side wall of the active layer, the first semiconductor side wall, one side of the first semiconductor layer far away from the second semiconductor layer, the edge area of the first semiconductor electrode, the other side wall of the first semiconductor and one side of the first functional layer close to the first semiconductor layer.
5. The method of claim 1, wherein the step of patterning the vertical light emitting diode comprises:
patterning the vertical light emitting diode to enable the vertical light emitting diode to form a plurality of mesa structures arranged at intervals, and the first functional layer in contact with the transfer substrate and the first functional layer close to one side of the sacrificial layer are exposed;
the step of forming the first functional layer includes: forming the first functional layer covering the edge area of the second semiconductor electrode on the side of the second semiconductor layer, which faces away from the first semiconductor layer;
the step of forming the second functional layer includes: and forming the second functional layer which covers one side of the first functional layer close to the second semiconductor layer, the side wall of the active layer, the side wall of the first semiconductor layer, one side of the first semiconductor layer, which is far away from the second semiconductor layer, the edge area of the first semiconductor electrode and one side of the first functional layer close to the first semiconductor layer.
6. The method of claim 1, wherein the step of providing a vertical light emitting diode comprises:
providing a growth substrate;
growing a buffer layer on the growth substrate;
forming the epitaxial layer on one side of the buffer layer, which is far away from the growth substrate, wherein the epitaxial layer comprises a first semiconductor layer, an active layer and a second semiconductor layer which are sequentially stacked;
forming the second semiconductor electrode on a side of the second semiconductor layer facing away from the active layer;
taking the buffer layer as a stripping sacrificial layer, removing the buffer layer to strip the growth substrate from the contact surface of the buffer layer and the growth substrate and expose the first semiconductor layer;
and forming the first semiconductor electrode on one side of the first semiconductor layer, which faces away from the active layer.
7. The method of claim 1, wherein the vertical light emitting diode comprises a first semiconductor electrode, a first semiconductor reflective layer, a first semiconductor layer, an active layer, a second semiconductor reflective layer, and a second semiconductor electrode, which are sequentially stacked.
8. The method according to claim 1, wherein the vertical light emitting diode comprises a first semiconductor electrode, a first transparent current diffusion layer, a first semiconductor layer, an active layer, a second semiconductor layer, a second transparent current diffusion layer, and a second semiconductor electrode, which are sequentially stacked.
9. The method of claim 1, wherein forming a transfer substrate on a side of the first functional layer facing away from the epitaxial layer, wherein partially forming a sacrificial layer between the transfer substrate and the first functional layer comprises:
locally forming the sacrificial layer on one side of the first functional layer, which is far away from the epitaxial layer;
and forming the transfer substrate on one side of the first functional layer, which is far away from the epitaxial layer, and one side of the sacrificial layer, which is far away from the first functional layer.
10. The method of claim 1,
the material of the first functional layer and/or the second functional layer comprises at least one of metal, metal alloy, insulating material, cured resin and semiconductor material;
the sacrificial layer is made of at least one of a semiconductor material, an insulating medium material, a metal material and a specific organic easily-soluble material;
the material of the transfer substrate is at least one of sapphire, aluminum nitride, gallium nitride, silicon carbide or metal.
11. The method according to any one of claims 6 to 8, wherein the buffer layer is removed by at least one of wet etching, dry etching and laser lift-off.
12. The method of claim 1, further comprising:
transferring the vertical light emitting diode, the first functional layer covering the vertical light emitting diode, and the second functional layer covering the vertical light emitting diode onto a flexible substrate.
13. A miniature semiconductor light emitting device, comprising:
transferring the substrate;
a first functional layer including a first sub-section, a second sub-section and a third sub-section connected in sequence;
a second functional layer including a fourth sub-portion, a fifth sub-portion and a sixth sub-portion connected in sequence;
the vertical light-emitting diode at least comprises a first semiconductor electrode, an epitaxial layer and a second semiconductor electrode which are sequentially stacked;
the first sub-part and the fourth sub-part form a supporting part, and the first sub-part and the fourth sub-part are sequentially stacked on one side of the transfer substrate;
the second sub-part and the fifth sub-part form a suspended thin-wall part which is sequentially stacked and is not in contact with the transfer substrate;
the third sub-part, the sixth sub-part and the vertical light emitting diode form a suspended light emitting part and are not in contact with the transfer substrate;
the top height of the supporting part is smaller than or equal to the bottom height of the suspended light-emitting part, and the top height of the suspended thin-wall part is smaller than or equal to the bottom height of the suspended light-emitting part.
14. A miniature semiconductor light emitting device as set forth in claim 13, wherein the third sub-portion covers at least a side of the epitaxial layer facing away from the first semiconductor electrode and is provided with a portion of the second semiconductor electrode exposed outside the first opening, the sixth sub-portion covers at least a side of the first semiconductor electrode facing away from the epitaxial layer, the first sidewall of the epitaxial layer and a side of the first functional layer facing away from the transfer substrate, and the sixth sub-portion is provided with a portion of the first semiconductor electrode exposed outside the second opening.
15. A miniature semiconductor light emitting device as set forth in claim 14,
the epitaxial layer comprises a first semiconductor layer, an active layer and a second semiconductor layer which are sequentially stacked, wherein a mesa structure is formed on one side of the first semiconductor layer, which faces the second semiconductor layer, and part of the first semiconductor layer is exposed.
16. A miniature semiconductor light emitting device as set forth in claim 15,
the third sub-portion covers one side of the second semiconductor layer, which is far away from the first semiconductor layer, the edge area of the second semiconductor electrode, a side wall of the second semiconductor layer, a side wall of the active layer and the exposed surface of the first semiconductor layer, which is close to one side of the active layer;
the sixth sub-portion covers a side of the first functional layer close to the second semiconductor layer, another side wall of the active layer, a side wall of the first semiconductor layer, a side of the first semiconductor layer away from the second semiconductor layer, an edge region of the first semiconductor electrode, and another side wall of the first semiconductor.
17. A miniature semiconductor light emitting device as set forth in claim 14,
the epitaxial layer comprises a first semiconductor layer, an active layer and a second semiconductor layer which are sequentially stacked, wherein the edge of the first semiconductor layer is aligned with the edge of the active layer and the edge of the second semiconductor layer;
the third sub-portion covers one side of the second semiconductor layer, which is far away from the first semiconductor layer, the edge area of the second semiconductor electrode, a side wall of the second semiconductor layer and a side wall of the active layer;
the sixth sub-portion covers a side of the third sub-portion close to the second semiconductor layer, another side wall of the active layer, a first side wall of the first semiconductor, a side of the first semiconductor layer away from the second semiconductor layer, an edge region of the first semiconductor electrode, another side wall of the first semiconductor, and a side of the third sub-portion close to the first semiconductor layer.
18. A miniature semiconductor light emitting device as set forth in claim 14,
the epitaxial layer comprises a first semiconductor layer, an active layer and a second semiconductor layer which are sequentially stacked, wherein the edge of the first semiconductor layer is aligned with the edge of the active layer and the edge of the second semiconductor layer;
the third sub-portion covers the side of the second semiconductor layer, which faces away from the first semiconductor layer, and the edge area of the second semiconductor electrode;
the sixth sub-portion covers a side of the first functional layer close to the second semiconductor layer, a side wall of the active layer, a side wall of the first semiconductor layer, a side of the first semiconductor layer away from the second semiconductor layer, an edge region of the first semiconductor electrode, and a side of the third sub-portion close to the first semiconductor layer.
19. A miniature semiconductor light emitting device as set forth in claim 13,
the thickness of the second semiconductor electrode is less than or equal to that of the third sub-portion;
the thickness of the first semiconductor electrode is less than or equal to the thickness of the sixth sub-portion.
20. A miniature semiconductor light emitting device as set forth in claim 13,
the hanging thin-walled portion is used as a cut-off portion to separate the supporting portion and the hanging light emitting portion so as to transfer the hanging light emitting portion onto a flexible substrate.
21. A miniature semiconductor light emitting device as set forth in claim 20,
and the suspended thin wall part is provided with a breaking groove.
22. A miniature semiconductor light emitting device as set forth in claim 13,
the thickness of the suspended thin wall part is 0.1-10 μm, and the width of the suspended light-emitting part is 1-200 μm.
23. A miniature semiconductor light emitting device as set forth in claim 13,
the material of the first functional layer and/or the second functional layer comprises at least one of a metal, a metal alloy, an insulating material, a cured resin, and a semiconductor material.
24. The micro semiconductor light emitting device according to claim 13, wherein the vertical type light emitting diode comprises the first semiconductor electrode, a first semiconductor reflective layer, a first semiconductor layer, an active layer, a second semiconductor reflective layer, and the second semiconductor electrode, which are sequentially stacked.
25. The micro semiconductor light emitting device according to claim 13, wherein the vertical type light emitting diode comprises a first semiconductor electrode, a first transparent current diffusion layer, a first semiconductor layer, an active layer, a second semiconductor layer, a second transparent current diffusion layer, and a second semiconductor electrode, which are sequentially stacked.
CN202110703955.3A 2021-06-24 2021-06-24 Miniature semiconductor light-emitting device and manufacturing method thereof Pending CN113594306A (en)

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