CN113594195A - MiniLED and manufacturing method thereof - Google Patents
MiniLED and manufacturing method thereof Download PDFInfo
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- CN113594195A CN113594195A CN202110840122.1A CN202110840122A CN113594195A CN 113594195 A CN113594195 A CN 113594195A CN 202110840122 A CN202110840122 A CN 202110840122A CN 113594195 A CN113594195 A CN 113594195A
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- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 238000007789 sealing Methods 0.000 claims abstract description 19
- 239000000853 adhesive Substances 0.000 claims abstract description 17
- 230000001070 adhesive effect Effects 0.000 claims abstract description 17
- 239000000565 sealant Substances 0.000 claims abstract description 10
- 239000010410 layer Substances 0.000 claims description 38
- 238000004140 cleaning Methods 0.000 claims description 18
- 239000012790 adhesive layer Substances 0.000 claims description 10
- 239000003292 glue Substances 0.000 claims description 10
- 238000012423 maintenance Methods 0.000 claims description 10
- 238000000034 method Methods 0.000 claims description 10
- 238000007639 printing Methods 0.000 claims description 8
- 230000032683 aging Effects 0.000 claims description 7
- 238000005476 soldering Methods 0.000 claims description 7
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 5
- 238000005520 cutting process Methods 0.000 claims description 4
- 238000009792 diffusion process Methods 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- 238000003825 pressing Methods 0.000 claims description 3
- 230000002159 abnormal effect Effects 0.000 claims 1
- 239000008393 encapsulating agent Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 6
- 239000002096 quantum dot Substances 0.000 description 13
- 238000002310 reflectometry Methods 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 6
- 238000000576 coating method Methods 0.000 description 6
- 229910000679 solder Inorganic materials 0.000 description 5
- 230000007547 defect Effects 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000012528 membrane Substances 0.000 description 3
- 230000005856 abnormality Effects 0.000 description 2
- 238000005282 brightening Methods 0.000 description 2
- 238000007791 dehumidification Methods 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 239000002390 adhesive tape Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
- H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
- H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
- H01L33/46—Reflective coating, e.g. dielectric Bragg reflector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/54—Encapsulations having a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/005—Processes relating to semiconductor body packages relating to encapsulations
Abstract
The application relates to a MiniLED, which comprises a MiniLED light source plate, an LED chip and a sealant layer, wherein the LED chip is arranged on the MiniLED light source plate; the MiniLED light source board is characterized by further comprising a reflecting film, wherein the adhesive sealing layer is connected with the reflecting film, and the reflecting film or the adhesive sealing layer is arranged on the MiniLED light source board; the reflecting film is provided with a through hole, and the LED chip corresponds to the through hole. The application has the effect of improving the brightness of the MiniLED.
Description
Technical Field
The application relates to the technical field of LED display screens, in particular to a MiniLED and a manufacturing method thereof.
Background
Liquid Crystal Display (LCD) and organic light emitting diode display (OLED) are mainstream of current display technologies, wherein OLED display screens are widely applied to electronic products such as mobile phones and televisions. In recent years, the concepts of mini light emitting diode (miniLED) display and micro light emitting diode (micro led) display have been proposed.
How to improve the brightness of the MiniLED on the premise of the same power consumption is a problem needing to be broken through in the whole industry.
Disclosure of Invention
In order to improve the brightness of the MiniLED, the application provides the MiniLED and a manufacturing method thereof.
In a first aspect, the MiniLED provided by the present application adopts the following technical scheme:
a MiniLED comprises a MiniLED light source plate, an LED chip and an adhesive layer, wherein the LED chip is arranged on the MiniLED light source plate; the MiniLED light source board is characterized by further comprising a reflecting film, wherein the adhesive sealing layer is connected with the reflecting film, and the reflecting film or the adhesive sealing layer is arranged on the MiniLED light source board; the reflecting film is provided with a through hole, and the LED chip corresponds to the through hole.
By adopting the technical scheme, the LED chip emits light, and the reflecting film can effectively reflect the light emitted by the LED chip out to increase the brightness; the arranged adhesive layer can improve the stability of the LED chip and the reflecting film; the average reflectivity between 380 and 780 nm bands can be made higher than 97% by providing a reflective film.
Optionally, the reflective membrane sets up on the miniLED light source board, the LED chip is kept away from the one end of miniLED light source board passes the through-hole, the sealant layer sets up the reflective membrane is kept away from one side of miniLED light source board, just the LED chip is kept away from the one end of miniLED light source board is located in the sealant layer.
Through adopting above-mentioned technical scheme, the back is placed on miniLED light source board to the LED chip, aims at the through-hole on the reflectance coating to the LED chip, then passes the through-hole with the LED chip, makes the reflectance coating conflict miniLED light source board, seals glue at last and fixes.
Optionally, one side of the reflective film, which is close to the MiniLED light source plate, is provided with a guide groove communicated with the through hole.
By adopting the technical scheme, the guide groove is convenient for the installation of the reflecting film.
Optionally, the adhesive sealing layer is disposed on the MiniLED light source board, and the LED chip is located in the adhesive sealing layer; the reflecting film is arranged on the adhesive sealing layer.
Through adopting above-mentioned technical scheme, the LED chip is placed on the MiniLED light source board after, seals earlier and glues fixedly, with the reflectance coating adhesion on the adhesive tape layer again at the back, both can improve the stability of LED chip on MiniLED light source board like this, the installation of reflectance coating of can being convenient for again.
Optionally, one side of the reflective film, which is far away from the MiniLED light source plate, is provided with a light diffusion groove.
Through adopting above-mentioned technical scheme, the light groove that expands that sets up can make reflection that light can be better.
Optionally, the LED light source plate further comprises two layers of BEF films, and the reflecting film and the sealant layer are located between the two layers of BEF films and the MiniLED light source plate.
Through adopting above-mentioned technical scheme, the two-layer BEF membrane that sets up can be better the brightening.
In a second aspect, the present application provides a method for manufacturing a MiniLED, which adopts the following technical scheme:
a method for manufacturing a MiniLED includes, S1: preparing materials; s2: laser coding; s3: dehumidifying; s4: printing; s5: SPI; s6: die bonding, namely mounting the LED chip on the MiniLED light source plate; s7: reflow soldering; s8: AOI; s9: lighting up; s10: cleaning with pure water; s11: dehumidifying; s12: plasma cleaning; s13: dispensing and pressing a film, namely mounting the adhesive sealing layer and the reflecting film on the MiniLED light source board, and then mounting two layers of BEF films; s14: long baking; s15: cutting; s16: cleaning; s17: dehumidifying; s18: lighting up; s19: aging; s20: and (7) warehousing.
Through adopting above-mentioned technical scheme, miniLED light source board prepares to accomplish the back, carries out laser and beats the sign indicating number, then dehumidifies, carries out solder paste printing on miniLED light source board after that, then carries out the SPI step, detects the quality that solder paste printed, unqualifiedly prints the step again. And then, carrying out die bonding on the MiniLED light source plate which is qualified in printing, and installing the LED chip on the MiniLED light source plate. Then reflow soldering is carried out, and the stability of the LED chip on the MiniLED light source board is improved; then, A0I step is performed to detect mounting errors and soldering defects on the substrate. Then lightening the product without defects; the method comprises the following steps of firstly, carrying out pure water cleaning on the MiniLED light source plate which can be lightened, preliminarily cleaning impurities of the MiniLED light source plate, and then dehumidifying; and then plasma cleaning is carried out, so that the surface of the plate is cleaned, and the plate is better combined with glue at the later stage. And then, determining the mounting sequence of the adhesive sealing layer and the reflecting film as required, firstly mounting the adhesive sealing layer and the reflecting film, and then mounting the two layers of BEF films to form the MiniLED. Then, long-time baking is carried out to improve the stability of the installed MiniLED; then, four sides of the MiniLED are cut off, and then the MiniLED is cleaned, and the cut impurities are cleaned; then, dehumidifying to keep the MiniLED dry; then, lightening is carried out, and whether the installed MiniLED can be normally used is detected; and then carrying out aging treatment detection on the normally used MiniLED, and finally warehousing the MiniLED qualified in aging.
Optionally, in the lighting process of S9, when it is detected that an abnormality cannot be lighted, the lighting process is first maintained, and if the lighting process can be lighted after the maintenance, S10 may be performed, and if the lighting process cannot be lighted after the maintenance, the lighting process is uniformly recycled, and the lighting process is subsequently disassembled to be recycled.
By adopting the technical scheme, the LED chip is arranged on the MiniLED light source board for lighting test, whether the LED chip can normally work is detected, when the LED chip is detected to not normally work, the maintenance is carried out firstly, and after the maintenance, if the LED chip can normally work, the cleaning and processing can be continued; if the LED chip can not normally work after maintenance, the MiniLED light source plate with the LED chip is uniformly recycled, then the LED chip is detached from the MiniLED light source plate, and the MiniLED light source plate or the LED chip is recycled to facilitate subsequent continuous use.
To sum up, the application comprises the following beneficial technical effects:
1. the reflecting film can effectively reflect the light emitted by the LED chip out, so that the brightness is increased; the arranged adhesive layer can improve the stability of the LED;
2. the two BEF films can be used for better brightening.
Drawings
Fig. 1 is a schematic structural diagram of a MiniLED in embodiment 1 of the present application;
FIG. 2 is an exploded view of MiniLED in example 1 of the present application;
fig. 3 is a schematic structural diagram of a MiniLED in embodiment 2 of the present application;
fig. 4 is an exploded view of MiniLED in example 2 of the present application.
Reference numerals: 1. a MiniLED light source board; 2. an LED chip; 3. a reflective film; 31. a through hole; 4. a glue sealing layer; 5. a BLT film; 6. a quantum dot film; 7. BEF film.
Detailed Description
The present application is described in further detail below with reference to figures 1-4.
The embodiment of the application discloses a MiniLED.
Example 1:
referring to fig. 1 and 2, the MiniLED includes a MiniLED light source plate 1, a reflective film 3, an adhesive layer 4, a BLT film 5, a quantum dot film 6, and two BEF films 7, which are sequentially disposed from bottom to top.
The MiniLED light source plate 1 is adhered with an LED chip 2.
The reflecting film 3 is provided with through holes 31, and the through holes 31 correspond to the LED chips 2 one by one; one side of the reflecting film 3 close to the MiniLED light source plate 1 is provided with a guide groove communicated with the through hole 31; one end of the LED chip 2, which is far away from the MiniLED light source plate 1, sequentially penetrates through the guide groove and the through hole 31.
After the reflective film 3 is installed on the miniLED light source plate 1, the sealant layer 4 is laid, so that one end of the LED chip 2, which is far away from the miniLED light source plate 1, is located in the sealant layer 4.
Next, a BLT film 5 is bonded to the side of the sealant layer 4 away from the MiniLED light source board 1, and then a quantum dot film 6 is bonded to the BLT film 5. Finally, two BEF films 7 are bonded on the quantum dot film 6.
The implementation principle of the embodiment 1 of the application is as follows: bond LED chip 2 on MiniLED light source board 1 earlier, make LED chip 2 pass guide way and through-hole 31 in proper order after that, make reflectance coating 3 conflict MiniLED light source board 1 to bond reflectance coating 3 on MiniLED light source board 1. And then, a glue sealing layer 4 is laid on the reflecting film 3 and the LED chip 2 by glue. Next, a BLT film 5 is bonded to the sealant layer 4, and then a quantum dot film 6 is bonded to the BLT film 5. Finally, two BEF films 7 are bonded on the quantum dot film 6.
The BLT film 5 mainly transmits out blue light, and the deexcitation quantum dot film 6 emits white light, and light of other wavelength bands is reflected back to the BLT film 5 through the MiniLED light source. The light passing through the BLT film 5 is refracted by the BEF film 7 and then emitted from the MiniLED backlight surface, so that the light is recycled again, and the effect of improving the brightness is achieved.
The reflection film 3 can effectively reflect light reflected by the BEF film 7, white light is emitted after passing through the quantum dot film 6, and the white light is refracted by the BEF film 7 and then goes out from the MiniLED backlight surface, so that the effect of improving the brightness is achieved.
The experimental reflectivity of the MiniLED provided with the reflective film 3 between the 380 and 780 nm wavelength bands is as follows:
| NO. | scheme(s) | Reflectivity of |
| 1 | Non-sticking reflecting film | 84.35% |
| 2 | Pasting reflecting film | 97.01% |
| 3 | Pasting reflecting film | 97.04% |
| 4 | Pasting reflecting film | 97.05% |
Therefore, the average reflectivity between 380 and 780 nanometer wave bands after the reflecting film 3 is attached is higher than 97 percent.
The provision of the reflective film 3 and the BLT film 5 can enhance the brightness of the MiniLED.
Example 2:
referring to fig. 3 and 4, the MiniLED includes a MiniLED light source plate 1, an adhesive layer 4, a reflective film 3, a BLT film 5, a quantum dot film 6, and two BEF films 7, which are sequentially disposed from bottom to top.
Then bonding the reflecting film 3 on one side of the adhesive layer 4 far away from the MiniLED light source plate 1; the reflecting film 3 is also provided with through holes 31 corresponding to the LED chips 2 one by one, and one side of the reflecting film 3, which is far away from the MiniLED light source plate 1, is provided with a light diffusion groove communicated with the through holes 31.
Next, a BLT film 5 is bonded to the side of the reflective film 3 remote from the MiniLED light source board 1.
The implementation principle of embodiment 2 of the present application is as follows: firstly, the LED chip 2 is bonded on the MiniLED light source plate 1, and then the glue is used for paving the adhesive sealing layer 4 on the reflecting film 3 and the LED chip 2. Then adhering the reflecting film 3 to the adhesive layer 4, wherein the through holes 31 on the reflecting film 3 correspond to the LED chips 2 one by one; further, a BLT film 5 is bonded to the reflective film 3, and then a quantum dot film 6 is bonded to the BLT film 5. Finally, two BEF films 7 are bonded on the quantum dot film 6.
The BLT film 5 mainly transmits out blue light, and the deexcitation quantum dot film 6 emits white light, and light of other wavelength bands is reflected back to the BLT film 5 through the MiniLED light source. The light passing through the BLT film 5 is refracted by the BEF film 7 and then emitted from the MiniLED backlight surface, so that the light is recycled again, and the effect of improving the brightness is achieved.
The reflection film 3 can effectively reflect light reflected by the BEF film 7, white light is emitted after passing through the quantum dot film 6, and the white light is refracted by the BEF film 7 and then goes out from the MiniLED backlight surface, so that the effect of improving the brightness is achieved.
The experimental reflectivity of the MiniLED provided with the reflective film 3 between the 380 and 780 nm wavelength bands is as follows:
| NO. | scheme(s) | Reflectivity of |
| 1 | Non-sticking reflecting film | 84.35% |
| 2 | Pasting reflecting film | 97.04% |
| 3 | Pasting reflecting film | 97.05% |
| 4 | Pasting reflecting film | 97.11% |
Therefore, the average reflectivity between 380 and 780 nanometer wave bands after the reflecting film 3 is attached is higher than 97.05 percent.
The provision of the reflective film 3 and the BLT film 5 can enhance the brightness of the MiniLED.
The embodiment of the application also discloses a manufacturing method of the MiniLED.
A manufacturing method of a MiniLED comprises the following steps: s1: preparing materials;
s2: laser coding;
s3: dehumidifying;
s4: printing;
S5：SPI；
s6: die bonding, namely mounting the LED chip 2 on the MiniLED light source board 1;
s7: reflow soldering;
S8：AOI；
s9: lighting, when detecting that the lamp cannot be lighted due to abnormality, firstly maintaining, and then carrying out subsequent steps if the lamp can be lighted after maintenance, and carrying out unified recovery if the lamp cannot be lighted;
s10: cleaning with pure water;
s11: dehumidifying;
s12: plasma cleaning;
s13: dispensing and pressing a film, namely mounting the adhesive sealing layer 4 and the reflecting film 3 on the MiniLED light source board 1, and then mounting two layers of BEF films 7;
s14: long baking;
s15: cutting;
s16: cleaning;
s17: dehumidifying;
s18: lighting up;
s19: aging;
s20: and (7) warehousing.
The implementation principle of the manufacturing method of the MiniLED in the embodiment of the application is as follows: after the MiniLED light source board 1 is prepared, laser coding is performed, then dehumidification is performed, and then solder paste is printed on the MiniLED light source board 1. Then, performing an SPI step, detecting the quality of solder paste printing, and performing a reprinting step after the solder paste printing is unqualified; mounting the LED chip 2 on the MiniLED light source plate 1 after the printing is qualified; then reflow soldering is carried out, and the stability of the LED chip 2 on the MiniLED light source board 1 is improved; then, A0I step is performed to detect mounting errors and soldering defects on the substrate.
Then, a lighting test is carried out on the product without defects, whether the LED chip 2 can normally work is detected, when the LED chip 2 is detected to be incapable of normally working, maintenance is carried out firstly, and subsequent cleaning can be carried out continuously if the LED chip 2 can normally work after maintenance; if the LED chip 2 can not work normally after maintenance, the MiniLED light source board 1 with the LED chip 2 is recycled in a unified way, then the LED chip 2 is subsequently detached from the MiniLED light source board 1, and the MiniLED light source board 1 or the LED chip 2 is recycled to facilitate subsequent continuous use.
Pure water cleaning is firstly carried out on the MiniLED light source plate 1 which can be lightened, impurities of the MiniLED light source plate 1 are firstly preliminarily cleaned, and then dehumidification is carried out; and then plasma cleaning is carried out, so that the surface of the plate is cleaned, and the plate is better combined with glue at the later stage.
And then, determining the mounting sequence of the adhesive sealing layer 4 and the reflecting film as required, firstly mounting the adhesive sealing layer 4 and the reflecting film 3, and then mounting two layers of BEF films 7 at two sides to form the MiniLED.
Then, long-time baking is carried out to improve the stability of the installed MiniLED; then cutting off four sides, cleaning, and cleaning the cut impurities; then, dehumidifying the cut MiniLED to keep the MiniLED dry; then, lightening is carried out, and whether the installed MiniLED can be normally used is detected; and (4) carrying out aging treatment detection on the MiniLED which is normally used, and finally warehousing the MiniLED which is qualified in aging treatment.
The above embodiments are preferred embodiments of the present application, and the protection scope of the present application is not limited by the above embodiments, so: all equivalent changes made according to the structure, shape and principle of the present application shall be covered by the protection scope of the present application.
Claims (8)
1. A MiniLED comprises a MiniLED light source plate (1), an LED chip (2) and an adhesive sealing layer (4), wherein the LED chip (2) is arranged on the MiniLED light source plate (1); the MiniLED light source board is characterized by further comprising a reflecting film (3), wherein the adhesive layer (4) is connected with the reflecting film (3), and the reflecting film (3) or the adhesive layer (4) is arranged on the MiniLED light source board (1); the reflecting film (3) is provided with a through hole (31), and the LED chip (2) corresponds to the through hole (31).
2. The MiniLED according to claim 1, wherein the reflective film (3) is disposed on the MiniLED light source board (1), one end of the LED chip (2) away from the MiniLED light source board (1) passes through the through hole (31), the sealant layer (4) is disposed on one side of the reflective film (3) away from the MiniLED light source board (1), and one end of the LED chip (2) away from the MiniLED light source board (1) is disposed in the sealant layer (4).
3. The MiniLED of claim 2, wherein a guide groove communicated with the through hole (31) is formed at one side of the reflective film (3) close to the MiniLED light source board (1).
4. A MiniLED according to claim 1, characterized in that the glue line (4) is arranged on the MiniLED light source board (1), the LED chip (2) being located in the glue line (4); the reflecting film (3) is arranged on the adhesive sealing layer (4).
5. The MiniLED of claim 4, wherein the side of the reflective film (3) away from the MiniLED light source board (1) is provided with a light diffusion groove.
6. A MiniLED according to claim 1, further comprising two layers of BEF film (7), wherein the reflective film (3) and the encapsulant layer (4) are located between the two layers of BEF film (7) and the MiniLED light source board (1).
7. A method of making a MiniLED of claim 6, wherein the step of S1: preparing materials;
s2: laser coding;
s3: dehumidifying;
s4: printing;
S5：SPI；
s6: die bonding, namely mounting the LED chip (2) on the MiniLED light source board (1);
s7: reflow soldering;
S8：AOI；
s9: lighting up;
s10: cleaning with pure water;
s11: dehumidifying;
s12: plasma cleaning;
s13: dispensing and pressing a film, namely mounting the adhesive sealing layer (4) and the reflecting film (3) on the MiniLED light source board (1), and then mounting two layers of BEF films (7);
s14: long baking;
s15: cutting;
s16: cleaning;
s17: dehumidifying;
s18: lighting up;
s19: aging;
s20: and (7) warehousing.
8. The MiniLED manufacturing method of claim 7, wherein the MiniLED is maintained when the lighting is detected to be abnormal and not lighted in the lighting process of S9, and the MiniLED is maintained and then can be lighted in S10 if the lighting is possible, and can be uniformly recovered if the lighting is not possible after the maintenance, and then can be disassembled and recovered.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110840122.1A CN113594195A (en) | 2021-07-24 | 2021-07-24 | MiniLED and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110840122.1A CN113594195A (en) | 2021-07-24 | 2021-07-24 | MiniLED and manufacturing method thereof |
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| Publication Number | Publication Date |
|---|---|
| CN113594195A true CN113594195A (en) | 2021-11-02 |
Family
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| US20070001185A1 (en) * | 2005-06-29 | 2007-01-04 | Lu Ying T | LED backlight module |
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| CN211293530U (en) * | 2019-12-30 | 2020-08-18 | 深圳Tcl新技术有限公司 | Backlight module and display device |
| CN112103384A (en) * | 2020-09-23 | 2020-12-18 | 福建华佳彩有限公司 | Mini LED screen structure and packaging method thereof |
| CN112735259A (en) * | 2021-01-18 | 2021-04-30 | 东莞市德普特电子有限公司 | Mini LED backlight source structure for realizing high brightness and display device |
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2021
- 2021-07-24 CN CN202110840122.1A patent/CN113594195A/en active Pending
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20070001185A1 (en) * | 2005-06-29 | 2007-01-04 | Lu Ying T | LED backlight module |
| CN105590994A (en) * | 2014-10-22 | 2016-05-18 | 泉州市金太阳照明科技有限公司 | LED light source substrate and manufacturing method thereof |
| CN105911762A (en) * | 2016-06-06 | 2016-08-31 | 东莞市平洋电子有限公司 | Straight down type backlight module |
| CN208818988U (en) * | 2018-09-11 | 2019-05-03 | 惠州市隆利科技发展有限公司 | A kind of direct-light-type backlight reducing thickness |
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