CN113583574A - Polishing solution for zinc selenide lens and preparation method thereof - Google Patents
Polishing solution for zinc selenide lens and preparation method thereof Download PDFInfo
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- CN113583574A CN113583574A CN202111046359.9A CN202111046359A CN113583574A CN 113583574 A CN113583574 A CN 113583574A CN 202111046359 A CN202111046359 A CN 202111046359A CN 113583574 A CN113583574 A CN 113583574A
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- zinc selenide
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- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
Abstract
The disclosure provides a polishing solution for a zinc selenide lens and a preparation method thereof. The polishing solution for the zinc selenide lens mainly comprises the following raw materials in percentage by weight: alumina: 10% -30%; dispersing agent: 15% -40%; pH value regulator: enabling the pH value of the polishing solution for the zinc selenide lens to be 4-5; the balance of deionized water; the dispersant is dimethyl silicone oil. The preparation method of the polishing solution for the zinc selenide lens comprises the following steps: step one, adding aluminum oxide and a dispersing agent into deionized water in sequence, and stirring uniformly to form a solution; adding a pH value regulator into the solution obtained in the first step to regulate the pH value to be 4-5; and step three, vibrating the solution obtained in the step two for 10-30 min under the ultrasonic vibration condition to obtain the polishing solution for the zinc selenide lens. The polishing solution for the zinc selenide lens has the advantages of simple preparation method, high polishing efficiency, good stability and dispersibility, smooth and bright polished surface, low roughness and no scratch or pit.
Description
Technical Field
The invention relates to the technical field of lens processing, in particular to a polishing solution for a zinc selenide lens and a preparation method thereof.
Background
The zinc selenide material is an infrared optical material with high transmittance and low absorption coefficient, has good thermodynamic property, and becomes a material for preparing high-power CO because the zinc selenide has small absorption to light with the wavelength of 10.6 mu m2The preferred materials for the optics of the laser system. In addition to itIn the wavelength band of light transmission, it is also a commonly used material in different optical systems. Zinc selenide is a relatively soft material and is easily scratched. When used as a high power laser device, the bulk absorption and internal structural defects of the material need to be tightly controlled and polishing techniques are employed with minimal damage. At present, the surface polishing efficiency of zinc selenide is low, the brightness is poor, the polishing is not clean, or the defects of serious scratch, pits and the like are caused.
Disclosure of Invention
In view of the problems in the background art, the present disclosure is directed to a polishing solution for a zinc selenide lens and a method for preparing the same.
In order to achieve the above object, in a first aspect of the present disclosure, the present disclosure provides a polishing solution for a zinc selenide lens, the polishing solution mainly comprising, by weight: alumina: 10% -30%; dispersing agent: 15% -40%; pH value regulator: enabling the pH value of the polishing solution for the zinc selenide lens to be 4-5; the balance of deionized water; the dispersing agent is dimethyl silicone oil.
In some embodiments, the alumina particle size is 0.01um to 1 um.
In some embodiments, the alumina particle size is 0.01um to 0.5 um.
In some embodiments, the dimethicone has a viscosity of 10CS to 1000 CS.
In some embodiments, the dimethicone has a viscosity of 10CS to 500 CS.
In some embodiments, the pH adjusting agent is oxalic acid.
In a second aspect of the present disclosure, the present disclosure provides a method for preparing a polishing solution for a zinc selenide lens, comprising the steps of: step one, adding aluminum oxide and a dispersing agent into deionized water in sequence, and stirring uniformly to form a solution; adding a pH value regulator into the solution obtained in the first step to regulate the pH value to be 4-5; and step three, vibrating the solution obtained in the step two for 10-30 min under the ultrasonic vibration condition to obtain the polishing solution for the zinc selenide lens.
In some embodiments, in step three of the preparation of the polishing solution for zinc selenide lenses, the ultrasonic vibration frequency is 20HZ to 60 HZ.
In some embodiments, the polishing solution for zinc selenide lenses is shaken at a frequency of 40HZ for 20min in the third step of the preparation of the polishing solution.
The beneficial effects of this disclosure are as follows:
the polishing solution for the zinc selenide lens has the advantages of simple preparation method, shortened processing process flow time, high polishing efficiency, good stability and dispersibility, smooth and bright polished surface, low roughness, no scratch or pit, safety, environmental protection and low cost, and is very suitable for polishing soft zinc selenide lenses.
Detailed Description
The polishing solution for a zinc selenide lens according to the first aspect of the present disclosure, which consists essentially of the following raw materials in% by weight, is explained in detail below: alumina: 10% -30%; dispersing agent: 15% -40%; pH value regulator: enabling the pH value of the polishing solution for the zinc selenide lens to be 4-5; the balance being deionized water.
In the polishing solution raw material for the zinc selenide lens according to the first aspect of the disclosure, dimethyl silicon oil and aluminum oxide are mainly compounded, and meanwhile, a pH value regulator is added to prepare a composite polishing solution, and aluminum oxide is uniformly and stably distributed in the polishing solution under the action of a dispersing agent, so that the risk of aggregation of aluminum oxide polishing particles is further reduced, and on one hand, the aluminum oxide can remarkably improve the hardness of the composite polishing solution system, thereby improving the polishing efficiency; on the other hand, due to the lubricating and dispersing effects of the dimethyl silicone oil, the aluminum oxide particles have less chance of contacting the polishing surface, and therefore, the risk of scratching the polishing surface can be remarkably reduced.
In addition, in the raw material of the polishing solution for the zinc selenide lens according to the first aspect of the disclosure, the content of aluminum oxide is 10% to 30% of the total weight of the polishing solution for the zinc selenide lens. The excessive content of the aluminum oxide causes the excessive concentration of the polishing solution, the viscosity is increased, the fluidity is reduced, and the polishing efficiency is reduced; too little alumina content can reduce the mechanical removal rate of the polishing particles and reduce polishing efficiency. The content of the dispersing agent is 15 to 40 percent of the total weight of the polishing solution for the zinc selenide lens. Excessive content of the dispersant increases viscosity, reduces fluidity and reduces polishing efficiency; too little dispersant content can reduce the dispersion of the polishing particles, causing the particles to agglomerate and scratch the lens surface. The pH value of the polishing solution for the zinc selenide lens is 4-5 by the pH value regulator, the pH value of the polishing solution for the zinc selenide lens is too small, the zinc selenide is excessively corroded, the material is removed, decomposed and dissolved, and the surface polishing effect is uncontrollable under the chemical action; the pH value of the polishing solution for the zinc selenide lens is too high, and the mechanical friction action is dominant due to the electrochemical reaction, the oxidation of the surface of a wafer and the weakening of the etching action, so that the polishing efficiency is reduced, and the size of surface scratches is increased.
The dispersing agent in the polishing solution is selected from dimethyl silicone oil, and a plurality of conventional dispersing agents are adopted, but for the design scheme of the polishing solution, the dimethyl silicone oil and the alumina are selected to have good compounding effect, and suspended particles in the polishing solution are dispersed, so that repulsive force is generated among abrasive particles, the abrasive is prevented from being aggregated, the stability of the polishing solution is ensured, and the defects of the processed surface are reduced.
In some embodiments, the alumina particle size is 0.01 to 1um, and more preferably 0.01 to 0.5 um. Too small of alumina particle size can reduce the removal rate and reduce the polishing efficiency; too large a particle size of alumina will scratch the surface of the germanium crystal, with too deep scratches.
In some embodiments, the dimethicone has a viscosity of 10CS to 1000CS, more preferably 10CS to 500 CS. When the viscosity of the dimethyl silicone oil is too high, the polishing liquid has poor fluidity, the polishing efficiency is reduced, the consistency of quality transmission is reduced, and the cost is increased; when the viscosity of the dimethyl silicone oil is too low, the suspension cannot be uniformly and stably dispersed in the polishing solution, and the aggregation of particles cannot be effectively avoided, so that the surface flatness is greatly reduced, and scratches are easily generated.
In some embodiments, the pH adjusting agent is oxalic acid. The reducibility of the oxalic acid is stronger, and a soluble complex is formed due to the coordination effect of the oxalic acid, so that the corrosion degree of the oxalic acid with zinc selenide can be better regulated and controlled, and the quality of the polished surface is effectively improved.
Next, a method for preparing a polishing solution for a zinc selenide lens according to a second aspect of the present disclosure is described, which is used for preparing a polishing solution for a zinc selenide lens, and is characterized by comprising the steps of: step one, adding aluminum oxide and a dispersing agent into deionized water in sequence, and stirring uniformly to form a solution; adding a pH value regulator into the solution obtained in the first step to regulate the pH value to be 4-5; and step three, vibrating the solution obtained in the step two for 10-30 min under the ultrasonic vibration condition to obtain the polishing solution for the zinc selenide lens.
In the method for preparing the polishing solution for the zinc selenide lens according to the second aspect of the disclosure, in the third step, the ultrasonic vibration frequency is 20HZ to 60 HZ.
In the method for preparing the polishing solution for the zinc selenide lens according to the second aspect of the disclosure, in the third step, the vibration is performed for 20min under the condition of 40HZ frequency. The medium ultrasonic vibration is beneficial to mixing particles in the solution, and the uniformity and the stability of the solution are improved.
The disclosure is further illustrated with reference to the following examples. It should be understood that these examples are for illustrative purposes only and are not intended to limit the scope of the present disclosure.
Example 1
1000ml of polishing solution for a zinc selenide lens is prepared from the following raw materials in parts by weight:
the polishing solution comprises 10 weight percent of alumina powder, 15 weight percent of dimethyl silicone oil, a pH value regulator and the balance of deionized water, wherein the pH value regulator accounts for the pH value of the polishing solution to 4; the alumina powder particle size was 0.05um and the dimethicone viscosity was 100 CS.
The preparation method of the polishing solution for the zinc selenide lens comprises the following steps:
the method comprises the following steps: adding abrasive alumina and dimethyl silicone oil into a proper amount of deionized water in sequence, and stirring uniformly;
step two: adding oxalic acid to adjust the pH value of the solution in the first step to 4;
step three: and vibrating the solution obtained in the second step for 30min under the condition of ultrasonic vibration of 40HZ frequency to obtain the polishing solution for zinc selenide.
Example 2
1000ml of polishing solution for a zinc selenide lens is prepared from the following raw materials in parts by weight:
15 percent and 20 percent of alumina powder and dimethyl silicone oil respectively by weight, wherein the content of the pH value regulator is the amount which enables the pH value of the polishing solution to be 4.5, and the balance is deionized water; the alumina powder particle size was 0.1um and the dimethicone viscosity was 200 CS.
The preparation method of the polishing solution for the zinc selenide lens comprises the following steps:
the method comprises the following steps: adding abrasive alumina and dimethyl silicone oil into a proper amount of deionized water in sequence, and stirring uniformly;
step two: adding oxalic acid to adjust the pH value of the solution in the first step to 4.5;
step three: and vibrating the solution obtained in the second step for 20min under the condition of ultrasonic vibration of 45HZ frequency to obtain the polishing solution for zinc selenide.
Example 3
1000ml of polishing solution for a zinc selenide lens is prepared from the following raw materials in parts by weight:
the polishing solution comprises 30 weight percent of alumina powder, 40 weight percent of dimethyl silicone oil, a pH value regulator and the balance of deionized water, wherein the pH value regulator accounts for the pH value of the polishing solution to 4.5; the alumina powder particle size was 0.1um and the dimethicone viscosity was 200 CS.
The preparation method of the polishing solution for the zinc selenide lens comprises the following steps:
the method comprises the following steps: adding abrasive alumina and dimethyl silicone oil into a proper amount of deionized water in sequence, and stirring uniformly;
step two: adding oxalic acid to adjust the pH value of the solution in the first step to 4.5;
step three: and vibrating the solution obtained in the second step for 30min under the condition of ultrasonic vibration of 40HZ frequency to obtain the polishing solution for zinc selenide.
Comparative example 1
1000ml of polishing solution for a zinc selenide lens is prepared from the following raw materials in parts by weight:
alumina powder, hydroxyethyl cellulose, oxalic acid and deionized water, wherein the weight percentage contents of the alumina powder and the hydroxyethyl cellulose are respectively 30 percent and 40 percent, the content of the pH value regulator is the amount which enables the pH value of the polishing solution to be 4.5, and the balance is the deionized water; the alumina powder particle size was 0.1um and the dimethicone viscosity was 200 CS.
The preparation method of the polishing solution for the zinc selenide lens comprises the following steps:
the method comprises the following steps: sequentially adding abrasive alumina and hydroxyethyl cellulose into a proper amount of deionized water, and uniformly stirring;
step two: adding oxalic acid to adjust the pH value of the solution in the first step to 4.5;
step three: and vibrating the solution obtained in the second step for 30min under the condition of ultrasonic vibration of 40HZ frequency to obtain the polishing solution for zinc selenide.
Comparative example 2
1000ml of polishing solution for a zinc selenide lens is prepared from the following raw materials in parts by weight:
the polishing solution comprises 30 weight percent of alumina powder, 40 weight percent of dimethyl silicone oil, phosphoric acid and deionized water, wherein the content of a pH value regulator is such an amount that the pH value of the polishing solution is 4.5, and the balance is deionized water; the alumina powder particle size was 0.1um and the dimethicone viscosity was 200 CS.
The preparation method of the polishing solution for the zinc selenide lens comprises the following steps:
the method comprises the following steps: sequentially adding abrasive alumina and hydroxyethyl cellulose into a proper amount of deionized water, and uniformly stirring;
step two: adding oxalic acid to adjust the pH value of the solution in the first step to 4.5;
step three: and vibrating the solution obtained in the second step for 30min under the condition of ultrasonic vibration of 40HZ frequency to obtain the polishing solution for zinc selenide.
TABLE 1 test results
Group of | Surface roughness (Ra, unit nm) |
Comparative example 1 | 82.569 |
Comparative example 2 | 162.617 |
Example 1 | 0.754 |
Example 2 | 0.312 |
Example 3 | 0.801 |
The above-disclosed features are not intended to limit the scope of practice of the present disclosure, and therefore, all equivalent variations that are described in the claims of the present disclosure are intended to be included within the scope of the claims of the present disclosure.
Claims (9)
1. The polishing solution for the zinc selenide lens is characterized by mainly comprising the following raw materials in percentage by weight:
alumina: 10% -30%;
dispersing agent: 15% -40%;
pH value regulator: enabling the pH value of the polishing solution for the zinc selenide lens to be 4-5;
the balance of deionized water;
the dispersing agent is dimethyl silicone oil.
2. The polishing solution for zinc selenide lenses according to claim 1,
the granularity of the alumina is 0.01um to 1 um.
3. The polishing solution for zinc selenide lenses according to claim 2,
the granularity of the alumina is 0.01um to 0.5 um.
4. The polishing solution for a zinc selenide lens according to claim 1, wherein the viscosity of the dimethylsilicone fluid is 10CS to 1000 CS.
5. The polishing solution for a zinc selenide lens according to claim 1, wherein the viscosity of the dimethylsilicone fluid is 10CS to 500 CS.
6. The polishing solution for a zinc selenide lens according to claim 1, wherein the pH regulator is oxalic acid.
7. A method for preparing a polishing solution for a zinc selenide lens, which is used for preparing the polishing solution for the zinc selenide lens as claimed in claims 1 to 6, and is characterized by comprising the following steps:
step one, adding aluminum oxide and a dispersing agent into deionized water in sequence, and stirring uniformly to form a solution;
step two, adding a pH value regulator until the pH value of the solution in the step one is 4-5;
and step three, vibrating the solution obtained in the step two for 10-30 min under the ultrasonic vibration condition to obtain the polishing solution for the zinc selenide lens.
8. The method for preparing a polishing solution for a zinc selenide lens according to claim 7, wherein in the third step, the ultrasonic vibration frequency is 20HZ to 60 HZ.
9. The method for preparing a polishing solution for a zinc selenide lens according to claim 7, wherein the vibration is performed for 20min at a frequency of 40Hz in the third step.
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115157110A (en) * | 2022-09-02 | 2022-10-11 | 江苏先进无机材料研究院 | Method for improving surface quality of cesium iodide flexible crystal |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09137156A (en) * | 1995-11-16 | 1997-05-27 | Mitsubishi Chem Corp | Polishing composition for hard disk substrate and polishing method therewith |
CN109021834A (en) * | 2018-08-29 | 2018-12-18 | 德米特(苏州)电子环保材料有限公司 | A kind of resin lens polishing fluid of alumina host and preparation method thereof |
CN111364042A (en) * | 2020-04-29 | 2020-07-03 | 湖南华耀百奥医疗科技有限公司 | Environment-friendly grinding and polishing solution |
CN112680111A (en) * | 2020-12-24 | 2021-04-20 | 广东先导先进材料股份有限公司 | Polishing solution for glass and application thereof |
CN112936615A (en) * | 2021-04-14 | 2021-06-11 | 苏州海创光学科技有限公司 | Processing method of zinc selenide lens |
-
2021
- 2021-09-06 CN CN202111046359.9A patent/CN113583574A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH09137156A (en) * | 1995-11-16 | 1997-05-27 | Mitsubishi Chem Corp | Polishing composition for hard disk substrate and polishing method therewith |
CN109021834A (en) * | 2018-08-29 | 2018-12-18 | 德米特(苏州)电子环保材料有限公司 | A kind of resin lens polishing fluid of alumina host and preparation method thereof |
CN111364042A (en) * | 2020-04-29 | 2020-07-03 | 湖南华耀百奥医疗科技有限公司 | Environment-friendly grinding and polishing solution |
CN112680111A (en) * | 2020-12-24 | 2021-04-20 | 广东先导先进材料股份有限公司 | Polishing solution for glass and application thereof |
CN112936615A (en) * | 2021-04-14 | 2021-06-11 | 苏州海创光学科技有限公司 | Processing method of zinc selenide lens |
Non-Patent Citations (2)
Title |
---|
化学工业部科学技术情报研究所编: "《西德有机硅代表团来华技术座谈总结》", 31 May 1980 * |
李建军主编: "《塑料配方设计》", 31 May 2019, 北京:中国轻工业出版社 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN115157110A (en) * | 2022-09-02 | 2022-10-11 | 江苏先进无机材料研究院 | Method for improving surface quality of cesium iodide flexible crystal |
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