CN112936615A - Processing method of zinc selenide lens - Google Patents

Processing method of zinc selenide lens Download PDF

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Publication number
CN112936615A
CN112936615A CN202110398793.7A CN202110398793A CN112936615A CN 112936615 A CN112936615 A CN 112936615A CN 202110398793 A CN202110398793 A CN 202110398793A CN 112936615 A CN112936615 A CN 112936615A
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China
Prior art keywords
polishing
zinc selenide
processing
namely
selenide lens
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CN202110398793.7A
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Inventor
王海军
许儒
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Suzhou Leiyun Haichuang Photoelectric Technology Co ltd
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Suzhou Haichuang Optical Technology Co ltd
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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B28WORKING CEMENT, CLAY, OR STONE
    • B28DWORKING STONE OR STONE-LIKE MATERIALS
    • B28D1/00Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor
    • B28D1/18Working stone or stone-like materials, e.g. brick, concrete or glass, not provided for elsewhere; Machines, devices, tools therefor by milling, e.g. channelling by means of milling tools
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B19/00Single-purpose machines or devices for particular grinding operations not covered by any other main group

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  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mining & Mineral Resources (AREA)
  • Grinding And Polishing Of Tertiary Curved Surfaces And Surfaces With Complex Shapes (AREA)

Abstract

The invention discloses a processing method of a zinc selenide lens, which comprises the following steps of firstly, distributing materials, selecting proper blank materials from a raw material library, and processing the blank materials into raw materials meeting requirements; secondly, milling the ball, namely milling two spherical surfaces in sequence, wherein a concave surface is milled first, and then a convex surface is milled; thirdly, grinding, namely grinding the edge part of the raw material; fourthly, polishing, namely respectively performing cylindrical surface polishing, high-speed polishing and IC polishing; and fifthly, checking and packaging, namely checking the product by using a lamp and a dial indicator, and packaging the qualified product. The blank material is processed into the raw material, and the raw material is milled, ground, polished, inspected and packaged, so that the zinc selenide lens with high precision meeting the requirements is finally obtained.

Description

Processing method of zinc selenide lens
Technical Field
The invention relates to the field of lens processing, in particular to a processing method of a zinc selenide lens.
Background
Zinc selenide is a preferred material for making infrared lenses, windows, output couplers and beam expanders, is transparent to visible light, and has low absorption at infrared wavelengths. Tight control of material pickup and internal defects is critical in high power applications. The optical polishing techniques used for this purpose require minimal damage to the optical components and use the highest quality optical thin film coatings. The absorption rate of the material was examined by carbon dioxide laser vacuum calorimetry. Furthermore, zinc selenide is chemically very stable (unless treated with strong acids) and is not hygroscopic. Safe to use in most industrial, field and laboratory environments.
Therefore, zinc selenide is widely used in laser cutting, engraving, marking, drilling and other laser systems. The zinc selenide material has high thermal shock resistance, so that the zinc selenide material becomes an optimal optical material in a high-power carbon dioxide laser system. However, the conventional zinc selenide lens has low processing efficiency and low processing precision.
Therefore, the present inventors have aimed to invent a processing method of zinc selenide lens aiming at the above technical problems.
Disclosure of Invention
In order to overcome the above disadvantages, the present invention provides a method for processing a zinc selenide lens.
In order to achieve the above purposes, the invention adopts the technical scheme that: a processing method of a zinc selenide lens comprises the following steps:
firstly, feeding, namely selecting a proper blank material from a material storage, and processing the blank material into a material meeting the requirement;
secondly, milling the ball, namely milling two spherical surfaces in sequence, wherein a concave surface is milled first, and then a convex surface is milled;
thirdly, grinding, namely grinding the edge part of the raw material;
fourthly, polishing, namely respectively performing cylindrical surface polishing, high-speed polishing and IC polishing;
and fifthly, checking and packaging, namely checking the product by using a lamp and a dial indicator, and packaging the qualified product.
Preferably, in the hair dressing in the first step, the size of the raw material is measured by calipers, and the material satisfying the size requirement is selected and subjected to the next step. The raw material is a periscope lens, the material is zinc selenide, and the digital display caliper is selected as the caliper for measurement.
Preferably, in the milling of the ball in the second step, the thickness of the center thereof is measured by a dial gauge or dial gauge.
Preferably, the grinding in the third step is carried out by measuring the thickness of the center thereof using a dial gauge or a dial gauge.
Preferably, chamfering is also performed between the second step and the fourth step. That is, the chamfering step may be performed before the polishing, or may be performed after the polishing, and may be performed as needed.
Preferably, the rotation speed of the cylindrical surface polishing is 1200 rpm, the rotation speed of the high-speed polishing is 800 rpm, and during the cylindrical surface polishing and the high-speed polishing, polishing is performed by using a polishing solution, wherein the polishing solution is a diamond solution or an alumina polishing solution.
Preferably, the high-speed polishing and the IC polishing are checked by using a spot lamp and a dial indicator. After general high-speed polishing and IC polishing, the surface of the wafer is inspected under a 50W spotlight to ensure the surface performance, and the dial indicator is a digital display dial indicator and measures the center thickness.
The processing method of the zinc selenide lens has the advantages that the blank material is processed into the raw material, the raw material is milled, ground, polished, inspected and packaged, and the high-precision zinc selenide lens meeting the requirements is finally obtained.
Detailed Description
The following detailed description of the preferred embodiments of the present invention is provided to enable those skilled in the art to more readily understand the advantages and features of the present invention, and to clearly and unequivocally define the scope of the present invention.
In this embodiment, a method for processing a zinc selenide lens includes the following steps:
firstly, feeding, namely selecting a proper blank material from a material storage, and processing the blank material into a material meeting the requirement;
secondly, milling the ball, namely milling two spherical surfaces in sequence, wherein a concave surface is milled first, and then a convex surface is milled;
thirdly, grinding, namely grinding the edge part of the raw material;
fourthly, polishing, namely respectively performing cylindrical surface polishing, high-speed polishing and IC polishing;
and fifthly, checking and packaging, namely checking the product by using a lamp and a dial indicator, and packaging the qualified product.
In the material distribution in the first step, the size of the raw material is measured by a caliper, and the material satisfying the size requirement is selected and subjected to the next step. The raw material is a periscope lens, the material is zinc selenide, and the digital display caliper is selected as the caliper for measurement.
In the milling ball in the second step, the center thickness thereof is measured by a dial gauge or dial gauge.
And in the grinding in the third step, the thickness of the center of the grinding tool is measured by using a pointer dial indicator or a pointer dial indicator.
Chamfering is also performed between the second step and the fourth step. That is, the chamfering step may be performed before the polishing, or may be performed after the polishing, and may be performed as needed.
The rotating speed of cylindrical surface polishing is 1200 r/min, the rotating speed of high-speed polishing is 800 r/min, and during cylindrical surface polishing and high-speed polishing, polishing liquid is used for polishing, and the polishing liquid is diamond liquid or alumina polishing liquid.
Spot lights and dial gauges were used for inspection in high speed polishing and IC polishing. After general high-speed polishing and IC polishing, the surface of the wafer is inspected under a 50W spotlight to ensure the surface performance, and the dial indicator is a digital display dial indicator and measures the center thickness.
The processing method of the zinc selenide lens has the advantages that the blank material is processed into the raw material, the raw material is milled, ground, polished, inspected and packaged, the zinc selenide lens with high precision meeting the requirements is finally obtained, and in the processing method, the processing speed can be improved, and the high-speed and high-precision lens processing is realized.
Product specification of general blank sheet: 25mm 4.3mm, the green sheet was sampled and examined.
Figure BDA0003019453020000041
Example 1
Figure BDA0003019453020000042
Figure BDA0003019453020000051
Example 2
Figure BDA0003019453020000052
Figure BDA0003019453020000061
Example 3
Figure BDA0003019453020000062
Figure BDA0003019453020000071
Among them, in examples 1 to 3: CC-concave, CX-convex, ETV-edge thickness variation, surface 60-40 or 40-20, used herein as U.S. military standard MIL-O-13830, with two sets of numbers representing surface defect size, such as 40/20 (or 40-20) the former limiting scratch size and the latter limiting pock size.
In the embodiment, the key points are the polishing steps, namely cylindrical surface polishing, high-speed polishing and IC polishing, the polishing temperature is 22-23 ℃, the quality of the polishing solution and polishing is ensured, and the grain size of the diamond micro powder in the diamond polishing solution is 0.08 mm.
According to the three embodiments, the processing method can obtain the product meeting the inspection standard, has short processing time, and realizes the processing of the zinc selenide lens with high efficiency and high precision.
The above embodiments are merely illustrative of the technical concept and features of the present invention, and the present invention is not limited thereto, and any equivalent changes or modifications made according to the spirit of the present invention should be included in the scope of the present invention.

Claims (7)

1. A processing method of a zinc selenide lens is characterized in that: the method comprises the following steps:
firstly, feeding, namely selecting a proper blank material from a material storage, and processing the blank material into a material meeting the requirement;
secondly, milling the ball, namely milling two spherical surfaces in sequence, wherein a concave surface is milled first, and then a convex surface is milled;
thirdly, grinding, namely grinding the edge part of the raw material;
fourthly, polishing, namely respectively performing cylindrical surface polishing, high-speed polishing and IC polishing;
and fifthly, checking and packaging, namely checking the product by using a lamp and a dial indicator, and packaging the qualified product.
2. The method of claim 1, wherein the processing of the zinc selenide lens comprises: in the material distribution in the first step, the size of the raw material is measured by a caliper, and the material satisfying the size requirement is selected and subjected to the next step.
3. The method of claim 1, wherein the processing of the zinc selenide lens comprises: in the milling ball in the second step, the center thickness thereof is measured by a dial gauge or dial gauge.
4. The method of claim 1, wherein the processing of the zinc selenide lens comprises: and in the grinding in the third step, the thickness of the center of the grinding tool is measured by using a pointer dial indicator or a pointer dial indicator.
5. The method of claim 1, wherein the processing of the zinc selenide lens comprises: chamfering is also performed between the second step and the fourth step.
6. The method of claim 1, wherein the processing of the zinc selenide lens comprises: the rotating speed of the cylindrical surface polishing is 1200 rpm, the rotating speed of the high-speed polishing is 800 rpm, and in the cylindrical surface polishing and the high-speed polishing, polishing is carried out by using polishing liquid, wherein the polishing liquid is diamond liquid or alumina polishing liquid.
7. The method of claim 1, wherein the processing of the zinc selenide lens comprises: and inspecting by using a spotlight and a dial indicator in the high-speed polishing and the IC polishing.
CN202110398793.7A 2021-04-14 2021-04-14 Processing method of zinc selenide lens Pending CN112936615A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113583574A (en) * 2021-09-06 2021-11-02 安徽光智科技有限公司 Polishing solution for zinc selenide lens and preparation method thereof

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1785560A (en) * 2004-12-06 2006-06-14 云南北方光学电子集团有限公司 Processing method of zinc selenide and zinc sulfide aspheric optical element
CN103100965A (en) * 2013-02-05 2013-05-15 中国电子科技集团公司第四十六研究所 InP single crystal wafer twin polishing method and device
CN103934741A (en) * 2014-04-01 2014-07-23 壹埃光学(苏州)有限公司 Ultra-smooth polishing process with surface roughness reaching 0.1 nanoscale
KR101494439B1 (en) * 2013-09-23 2015-02-24 한국세라믹기술원 Infrared lens and method of manufacturing the same
CN105467480A (en) * 2015-11-23 2016-04-06 天津津航技术物理研究所 Aspheric surface processing method of high-precision CVD ZnSe lens
CN109693147A (en) * 2019-01-24 2019-04-30 泉州市友腾光电科技有限公司 A kind of ZNSE lenses polishing technique
CN111055170A (en) * 2020-01-14 2020-04-24 诸暨市领诚信息技术有限公司 Metal material surface polishing treatment method
CN111069981A (en) * 2019-12-30 2020-04-28 马鞍山市江南光学有限公司 Roof prism processing technology

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1785560A (en) * 2004-12-06 2006-06-14 云南北方光学电子集团有限公司 Processing method of zinc selenide and zinc sulfide aspheric optical element
CN103100965A (en) * 2013-02-05 2013-05-15 中国电子科技集团公司第四十六研究所 InP single crystal wafer twin polishing method and device
KR101494439B1 (en) * 2013-09-23 2015-02-24 한국세라믹기술원 Infrared lens and method of manufacturing the same
CN103934741A (en) * 2014-04-01 2014-07-23 壹埃光学(苏州)有限公司 Ultra-smooth polishing process with surface roughness reaching 0.1 nanoscale
CN105467480A (en) * 2015-11-23 2016-04-06 天津津航技术物理研究所 Aspheric surface processing method of high-precision CVD ZnSe lens
CN109693147A (en) * 2019-01-24 2019-04-30 泉州市友腾光电科技有限公司 A kind of ZNSE lenses polishing technique
CN111069981A (en) * 2019-12-30 2020-04-28 马鞍山市江南光学有限公司 Roof prism processing technology
CN111055170A (en) * 2020-01-14 2020-04-24 诸暨市领诚信息技术有限公司 Metal material surface polishing treatment method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113583574A (en) * 2021-09-06 2021-11-02 安徽光智科技有限公司 Polishing solution for zinc selenide lens and preparation method thereof

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Application publication date: 20210611