CN113578009A - Semiconductor process waste gas treatment device - Google Patents
Semiconductor process waste gas treatment device Download PDFInfo
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- CN113578009A CN113578009A CN202110856408.9A CN202110856408A CN113578009A CN 113578009 A CN113578009 A CN 113578009A CN 202110856408 A CN202110856408 A CN 202110856408A CN 113578009 A CN113578009 A CN 113578009A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/74—General processes for purification of waste gases; Apparatus or devices specially adapted therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/14—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by absorption
- B01D53/18—Absorbing units; Liquid distributors therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/14—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols by absorption
- B01D53/18—Absorbing units; Liquid distributors therefor
- B01D53/185—Liquid distributors
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/46—Removing components of defined structure
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/46—Removing components of defined structure
- B01D53/68—Halogens or halogen compounds
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D53/00—Separation of gases or vapours; Recovering vapours of volatile solvents from gases; Chemical or biological purification of waste gases, e.g. engine exhaust gases, smoke, fumes, flue gases, aerosols
- B01D53/34—Chemical or biological purification of waste gases
- B01D53/74—General processes for purification of waste gases; Apparatus or devices specially adapted therefor
- B01D53/76—Gas phase processes, e.g. by using aerosols
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D2257/00—Components to be removed
- B01D2257/20—Halogens or halogen compounds
- B01D2257/204—Inorganic halogen compounds
- B01D2257/2047—Hydrofluoric acid
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- Environmental & Geological Engineering (AREA)
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- Treating Waste Gases (AREA)
Abstract
The application relates to the technical field of semiconductor process waste gas treatment, in particular to a semiconductor process waste gas treatment device. The semiconductor process exhaust gas treatment device comprises: the treatment tank body comprises an oxidation reaction cavity, a waste liquid gathering cavity and an atomization washing cavity which are sequentially communicated; the oxidation reaction cavity and the atomization water washing cavity are positioned above the waste liquid gathering cavity; the oxidation reaction cavity is communicated with an air inlet channel, the air inlet channel is used for inputting process waste gas into the oxidation reaction cavity, and the oxidation reaction cavity performs oxidation reaction on the process waste gas input into the oxidation reaction cavity; the atomization water washing cavity is communicated with the exhaust channel, a spraying device is arranged in the atomization water washing cavity, an atomization sheet is mounted on the spraying device, and the atomization sheet can vibrate at a first oscillation frequency to enable the spraying device to spray atomized water droplets; the waste liquid gathering cavity is provided with a vibrating plate which can vibrate at a second oscillation frequency. The semiconductor process waste gas treatment device can solve the problem of a waste gas discharge port in the related art.
Description
Technical Field
The application relates to the technical field of semiconductor process waste gas treatment, in particular to a semiconductor process waste gas treatment device.
Background
After the semiconductor manufacturing process is completed, a process waste gas is generated, and the process waste gas is a mixed gas comprising, for example, SiH4Since a harmful gas such as a gas or a hydrogen fluoride HF gas is used, it is necessary to perform a harmless treatment before the discharge.
Generally, in the related art, an exhaust gas treatment device is adopted, the exhaust gas introduced into the device is firstly subjected to oxidation treatment to oxidize gases which can be oxidized in the process exhaust gas to form harmless substances, and then the exhaust gas after the oxidation treatment is subjected to water washing treatment, so that the water-soluble exhaust gas enters water.
However, in the related art, substances generated after oxidation treatment are easily agglomerated and float in waste water generated after water washing, gradually blocking a waste gas flow passage, and preventing waste gas from being further treated. In addition, all the reaction products cannot be immersed in the wastewater in the water washing process, and some of the reactants are gradually deposited on the exhaust gas outlet, thereby causing the exhaust gas outlet to be gradually blocked.
Disclosure of Invention
The application provides a semiconductor technology exhaust treatment device, can solve exhaust emission's among the correlation technique problem.
In order to solve the technical problems described in the background, the present application provides a semiconductor process exhaust gas treatment apparatus, comprising:
the treatment tank body comprises an oxidation reaction cavity, a waste liquid gathering cavity and an atomization washing cavity which are sequentially communicated; the oxidation reaction cavity and the atomization water washing cavity are positioned above the waste liquid gathering cavity;
the oxidation reaction cavity is communicated with an air inlet channel, the air inlet channel is used for inputting process waste gas into the oxidation reaction cavity, and the oxidation reaction cavity performs oxidation reaction on the process waste gas input into the oxidation reaction cavity;
the atomization water washing cavity is communicated with the exhaust channel, a spraying device is arranged in the atomization water washing cavity, an atomization sheet is mounted on the spraying device, and the atomization sheet can vibrate at a first oscillation frequency to enable the spraying device to spray atomized water droplets;
the waste liquid gathering cavity is provided with a vibrating plate which can vibrate at a second oscillation frequency.
Optionally, a combustion-supporting gas is introduced into the oxidation reaction chamber.
Optionally, the temperature environment of the oxidation reaction chamber is 500 ℃ to 1000 ℃.
Optionally, the first oscillation frequency is in a range of 1 MHz.
Optionally, the second oscillation frequency is in a range of 10KHZ to 200 KHZ.
Optionally, the vibration plate is located on a bottom surface of the waste liquid collecting cavity, so that waste liquid collected in the waste liquid collecting cavity submerges the vibration plate.
Optionally, the waste liquid gathering chamber is including being located first intercommunication mouth and the second intercommunication mouth at waste liquid gathering chamber top, the waste liquid gathering chamber passes through first intercommunication mouth with the oxidation reaction chamber intercommunication, the waste liquid gathering chamber passes through the second intercommunication mouth with the atomizing washing chamber intercommunication.
Optionally, a top of the waste liquid collecting cavity forms a circulation space, and the first communication port and the second communication port are communicated through the circulation space.
Optionally, the upper surface of the waste liquid collected in the waste liquid collecting cavity is located at the position of the first communicating port or the second communicating port, so that a circulating space is formed at the top of the waste liquid collecting cavity.
Optionally, the waste liquid gathering cavity is also connected with a drainage device, and the drainage device is used for controlling the drainage of the waste liquid gathered in the waste liquid gathering cavity.
The technical scheme at least comprises the following advantages: atomizing washing chamber can make surplus waste gas and atomizing drop of water mix more fully for the waste gas that can dissolve in the aquatic in the surplus waste gas gets into the aquatic and forms the waste liquid, avoids leading to the problem that exhaust-gas treatment efficiency is not enough because of mixing inadequately. In addition, the ultrasonic wave of the second oscillation frequency enables the oscillation piece to vibrate, so that the vibration piece is conducted to the waste liquid in the waste liquid gathering cavity to break up the solid in the waste liquid and avoid blocking a circulation space.
Drawings
In order to more clearly illustrate the detailed description of the present application or the technical solutions in the prior art, the drawings needed to be used in the detailed description of the present application or the prior art description will be briefly introduced below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings can be obtained by those skilled in the art without creative efforts.
Fig. 1 shows a schematic cross-sectional structural view of a semiconductor process waste gas treatment device according to an embodiment of the present application.
Detailed Description
The technical solutions in the present application will be described clearly and completely with reference to the accompanying drawings, and it is obvious that the described embodiments are some, but not all embodiments of the present application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
In the description of the present application, it should be noted that the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be constructed and operated in a particular orientation, and thus, should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present application, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, e.g., as meaning either a fixed connection, a removable connection, or an integral connection; the connection can be mechanical connection or electrical connection; the two elements may be directly connected or indirectly connected through an intermediate medium, or may be communicated with each other inside the two elements, or may be wirelessly connected or wired connected. The specific meaning of the above terms in the present application can be understood in a specific case by those of ordinary skill in the art.
In addition, the technical features mentioned in the different embodiments of the present application described below may be combined with each other as long as they do not conflict with each other.
Fig. 1 shows a schematic cross-sectional structural view of a semiconductor process waste gas treatment device according to an embodiment of the present application. As can be seen from fig. 1, the semiconductor process exhaust gas treatment device includes:
the treatment box 100 comprises an oxidation reaction cavity 110, a waste liquid gathering cavity 120 and an atomization washing cavity 130 which are sequentially communicated, wherein the oxidation reaction cavity 110 and the atomization washing cavity 130 are positioned above the waste liquid gathering cavity 120.
The oxidation reaction cavity 110 is communicated with the gas inlet channel 101, the gas inlet channel 101 is used for inputting the process waste gas into the oxidation reaction cavity 110, and the oxidation reaction cavity 110 is used for carrying out oxidation reaction on the process waste gas input into the oxidation reaction cavity 110, so that the gas capable of being oxidized in the process waste gas is oxidized to form a harmless substance. Alternatively, the oxidation reaction chamber 110 may be a combustion or electrical heating reaction chamber, and the temperature inside the oxidation reaction chamber 110 is set to 500 ℃ to 1000 ℃ by a combustion or electrical heating device, so that the thermal oxidation reaction of the oxidation reaction chamber 110 occurs. The oxidation reaction chamber 110 may further be connected to a combustion-supporting channel, and the combustion-supporting channel may introduce combustion-supporting gas, such as oxygen, into the oxidation reaction chamber 110, so as to improve the oxidation efficiency in the oxidation reaction chamber 110.
The atomization water washing cavity 130 is communicated with an exhaust passage 102, and the exhaust passage 102 is used for exhausting gas treated by the treatment box 100. Optionally, an air pump 140 is disposed on the exhaust channel 102, and the air pump 140 is configured to drive the air in the treatment tank 100 to rotate, wherein the air rotates in a direction that the air passes through the oxidation reaction chamber 110, the waste liquid collecting chamber 120, and the atomization washing chamber 130 from the air inlet channel 101, and is exhausted from the exhaust channel 102.
The atomization water washing cavity 130 is used for spraying atomization water drops, so that the waste gas entering the atomization water washing cavity 130 can react with the atomization water drops more sufficiently to generate harmless substances or be dissolved in water. Optionally, a spraying device 131 is arranged in the atomization washing cavity 130, an atomization sheet 132 is installed on the spraying device 131, an external circuit provides ultrasonic waves with a first oscillation frequency for the atomization sheet 132, an external water supply pipeline supplies water for the spraying device 131, and the ultrasonic waves with the first oscillation frequency can oscillate the atomization sheet 132, so that water drops sprayed out from the spraying device 131 are atomized, and the atomized water drops can fully react with the waste gas entering the atomization washing cavity 130. The external water supply line includes a water supply tank, a valve 133 controlling the opening and closing of the water supply line, and the water supply tank, the valve 133 and the atomizing plate 132 are communicated through a water supply pipe 134. Wherein, the diameter of the atomized water droplets formed in the atomized water washing chamber 130 is in the range of 5 μm to 100 μm, and the first oscillation frequency may be in the range of 1MHz or more.
The waste liquid collecting chamber 120 comprises a first communication port 121 and a second communication port 122, the first communication port 121 and the second communication port 122 are communicated through the waste liquid collecting chamber 120, and optionally the first communication port 121 and the second communication port 122 are positioned at the top of the waste liquid collecting chamber 120. The waste liquid collecting chamber 120 is communicated with the oxidation reaction chamber 110 through the first communicating port 121, and the waste liquid collecting chamber 120 is communicated with the atomized water washing chamber 130 through the second communicating port 122. The residual gas after the oxidation reaction in the oxidation reaction chamber 110 can enter the waste liquid collecting chamber 120 through the first communicating port 121, pass through the waste liquid collecting chamber 120, and enter the atomized water washing chamber 130 through the second communicating port 122. The flow of the residual gas causes the solid matters after the oxidation reaction in the oxidation reaction chamber 110 to be carried into the waste liquid collecting chamber 120, and the waste liquid formed by the sufficient reaction with the atomized water droplets in the atomized water washing chamber 130 flows into the waste liquid collecting chamber 120 from the second communication port 122.
The waste liquid collecting cavity 120 is provided with an oscillating sheet 121, an external circuit provides ultrasonic waves with a second oscillating frequency for the oscillating sheet 121, and the ultrasonic waves with the second oscillating frequency enable the oscillating sheet 121 to vibrate so as to be transmitted to the waste liquid in the waste liquid collecting cavity 120 to break the solid in the waste liquid and avoid blocking the circulation space. Wherein the oscillating plate 121 may be attached to the bottom surface and the side surface of the waste liquid collecting chamber 120. The second oscillation frequency may range from 10KHZ to 200 KHZ. The waste liquid collecting chamber 120 is further connected to a liquid draining device, and whether the waste liquid collected in the waste liquid collecting chamber 120 is drained or not is controlled by controlling the on-off state of the liquid draining device.
In the use process, waste liquid is collected in the waste liquid collecting cavity 120, and the position of the upper surface of the waste liquid is lower than the position of the first communicating port 121 or the position of the second communicating port 122, so that the waste liquid is prevented from submerging the first communicating port 121 or the second communicating port 122. That is, the waste liquid collecting chamber 120 has a flow space left above the first communication port 121 or the second communication port 122, so that air can flow between the first communication port 121 or the second communication port 122.
The external circuit for providing the first oscillation frequency and the second oscillation frequency includes an ultrasonic generator 151 and a switching control unit 152, and the switching control unit 152 is configured to control the ultrasonic generator to switch the first oscillation frequency and the second oscillation frequency. That is, when the droplet atomization is performed, the switching control unit 152 controls the ultrasonic generator 151 to generate the ultrasonic wave of the first oscillation frequency; the switching control unit 152 controls the ultrasonic generator 151 to generate ultrasonic waves of the second oscillation frequency when breaking the solid in the waste liquid collecting chamber 120.
The working process of the application is as follows:
the process waste gas enters the oxidation reaction chamber 110 from the gas inlet channel 101, oxidation reaction is performed in the oxidation reaction chamber 110, so that the gas capable of being oxidized in the process waste gas is oxidized to form a harmless substance, the residual gas after oxidation reaction in the oxidation reaction chamber 110 enters the waste liquid gathering chamber 120 from the first communication port 121, passes through the waste liquid gathering chamber 120, enters the atomization washing chamber 130 from the second communication port 122, and the solid substance after oxidation reaction in the oxidation reaction chamber 110 is carried into the waste liquid gathering chamber 120. The solid matter is broken up in the waste liquid collecting chamber 120 to avoid clogging the flow-through space in the upper part of the waste liquid collecting chamber 120. The waste gas entering the atomized water washing chamber 130 reacts with the atomized water droplets in the atomized water washing chamber 130, and dissolves in water to form waste liquid, the waste liquid flows into the waste liquid collecting chamber 120 from the second communicating port 122, and the residual harmless gas is discharged from the exhaust passage 102.
As can be seen from the above description, the semiconductor process waste gas treatment device provided by this embodiment can form the micro floating mist in the atomized water washing chamber, and the micro floating mist can be contacted and mixed with the process waste gas more sufficiently and then flows into the plug waste liquid collecting chamber. This stopper waste liquid gathering chamber can plan for the bulk suspended solid in the waste liquid, reduces the problem of blockking up gas passage.
It should be understood that the above examples are only for clarity of illustration and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications of this invention are intended to be covered by the scope of the invention as expressed herein.
Claims (10)
1. A semiconductor process exhaust gas treatment device, comprising:
the treatment tank body comprises an oxidation reaction cavity, a waste liquid gathering cavity and an atomization washing cavity which are sequentially communicated; the oxidation reaction cavity and the atomization water washing cavity are positioned above the waste liquid gathering cavity;
the oxidation reaction cavity is communicated with an air inlet channel, the air inlet channel is used for inputting process waste gas into the oxidation reaction cavity, and the oxidation reaction cavity performs oxidation reaction on the process waste gas input into the oxidation reaction cavity;
the atomization water washing cavity is communicated with the exhaust channel, a spraying device is arranged in the atomization water washing cavity, an atomization sheet is mounted on the spraying device, and the atomization sheet can vibrate at a first oscillation frequency to enable the spraying device to spray atomized water droplets;
the waste liquid gathering cavity is provided with a vibrating plate which can vibrate at a second oscillation frequency.
2. The semiconductor process exhaust gas treatment device according to claim 1, wherein a combustion-supporting gas is introduced into the oxidation reaction chamber.
3. The semiconductor process exhaust gas treatment device according to claim 1, wherein the temperature environment of the oxidation reaction chamber is 500 ℃ to 1000 ℃.
4. The semiconductor process exhaust gas treatment device according to claim 1, wherein the first oscillation frequency is in a range of 1MHz or more.
5. The semiconductor process effluent treatment plant of claim 1, wherein the second oscillation frequency is in a range of 10KHZ to 200 KHZ.
6. The semiconductor process exhaust gas treatment device according to claim 1, wherein the vibration plate is located at a bottom surface of the waste liquid collecting chamber so that the waste liquid collected in the waste liquid collecting chamber immerses the vibration plate.
7. The semiconductor process waste gas treatment device according to claim 1, wherein the waste liquid collecting chamber comprises a first communication port and a second communication port at the top of the waste liquid collecting chamber, the waste liquid collecting chamber is communicated with the oxidation reaction chamber through the first communication port, and the waste liquid collecting chamber is communicated with the atomization washing chamber through the second communication port.
8. The semiconductor process exhaust gas treatment device according to claim 7, wherein a top portion of the waste liquid collecting chamber forms a flow-through space through which the first communication port and the second communication port communicate.
9. The semiconductor process exhaust gas treatment device according to claim 8, wherein an upper surface of the waste liquid collected in the waste liquid collecting chamber is located at a position where the first communication port or the second communication port is located, so that a flow-through space is formed at a top of the waste liquid collecting chamber.
10. The semiconductor process waste gas treatment device according to claim 1, wherein the waste liquid collecting chamber is further connected with a drain for controlling the discharge of the waste liquid collected in the waste liquid collecting chamber.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110856408.9A CN113578009A (en) | 2021-07-28 | 2021-07-28 | Semiconductor process waste gas treatment device |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202110856408.9A CN113578009A (en) | 2021-07-28 | 2021-07-28 | Semiconductor process waste gas treatment device |
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| CN113578009A true CN113578009A (en) | 2021-11-02 |
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| CN202110856408.9A Pending CN113578009A (en) | 2021-07-28 | 2021-07-28 | Semiconductor process waste gas treatment device |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN206030781U (en) * | 2016-08-12 | 2017-03-22 | 天津市侨星印刷有限公司 | Ink horn constant temperature heating device of seal is spouted to digit |
| CN109453641A (en) * | 2018-12-29 | 2019-03-12 | 西安科技大学 | Underground coal mine ultrasonic atomization desulfurizing device |
| CN111578295A (en) * | 2020-03-31 | 2020-08-25 | 中国船舶重工集团公司第七一八研究所 | Burning washing type semiconductor waste gas treatment device |
| CN112742181A (en) * | 2020-12-14 | 2021-05-04 | 浙江赛鹭鑫仪器有限公司 | VOCs waste gas treatment system and method |
-
2021
- 2021-07-28 CN CN202110856408.9A patent/CN113578009A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN206030781U (en) * | 2016-08-12 | 2017-03-22 | 天津市侨星印刷有限公司 | Ink horn constant temperature heating device of seal is spouted to digit |
| CN109453641A (en) * | 2018-12-29 | 2019-03-12 | 西安科技大学 | Underground coal mine ultrasonic atomization desulfurizing device |
| CN111578295A (en) * | 2020-03-31 | 2020-08-25 | 中国船舶重工集团公司第七一八研究所 | Burning washing type semiconductor waste gas treatment device |
| CN112742181A (en) * | 2020-12-14 | 2021-05-04 | 浙江赛鹭鑫仪器有限公司 | VOCs waste gas treatment system and method |
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