CN113571486A - Phase-change latent heat type chip radiator - Google Patents
Phase-change latent heat type chip radiator Download PDFInfo
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- CN113571486A CN113571486A CN202010772610.9A CN202010772610A CN113571486A CN 113571486 A CN113571486 A CN 113571486A CN 202010772610 A CN202010772610 A CN 202010772610A CN 113571486 A CN113571486 A CN 113571486A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/42—Fillings or auxiliary members in containers or encapsulations selected or arranged to facilitate heating or cooling
- H01L23/427—Cooling by change of state, e.g. use of heat pipes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
- H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
- H01L23/367—Cooling facilitated by shape of device
- H01L23/3672—Foil-like cooling fins or heat sinks
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Abstract
The invention relates to a phase-change latent heat type chip radiator which comprises a closed radiator shell, wherein the radiator shell comprises a heat absorption end and a heat dissipation end, the heat absorption end is in heat transfer connection with a chip, the heat dissipation end is in heat transfer connection with an external heat dissipation environment, a capillary liquid absorption core and working fluid are arranged in the radiator shell, the capillary liquid absorption core comprises a metal woven mesh, and the metal woven mesh comprises a metal mesh surface A arranged at the inner side of the heat absorption end and a metal mesh surface B arranged at the inner side of the heat dissipation end. The working fluid at the inner side of the heat absorption end absorbs heat and then vaporizes, the vaporized working fluid is liquefied after releasing heat at the inner side of the heat dissipation end through the metal mesh surface B, and the liquefied working fluid after releasing heat returns to the inner side of the heat absorption end through the metal mesh surface A under the action of capillary force of the capillary wick. The invention adopts the scheme that the chip radiator is provided with the capillary wick which promotes the heat absorption and release circulation of the working fluid by utilizing the capillary force in the closed radiator shell, and has the characteristic of higher heat dissipation efficiency.
Description
Technical Field
The invention relates to a chip radiator, in particular to a phase-change latent heat type chip radiator, and belongs to the field of chip heating and heat management.
Background
With the development and popularization of smart phones, cloud computing, big data and artificial intelligence along with the falling of 5G infrastructure, the heating and heat management of electronic product chips are the same as the chips, and the heat management of the chips not only influences the operation speed and stability of the chips and the user experience feeling, but also influences the service life of the chips in a fatal manner. Nanotechnology has gained prominence in recent years in material research, particularly in the fields of medical treatment, electric solar energy, graphene and the likeTherefore, the research on the nano-grade material technology will lead the development of the material. Throughout the chip Heat dissipation management, through the development of key technologies such as metal material Heat conduction, Heat pipe, graphite material, and Vapor Chamber, especially the application of the phase change latent Heat technology, the Heat pipe and the Vapor Chamber have become the mainstream of the Heat dissipation design in recent years for high power and high Heat flux density chips. The phase change heat exchange process utilizes the phase change of the working medium under the tiny temperature difference to release a large amount of latent heat, the heat transfer can provide high heat transfer capacity, and the heat conductivity can reach 10 when the phase change is condensed3-105W/m2K, for use in heat source electronic products with high heat flux density and temperature requirements, boiling or evaporation is a very advantageous way to remove heat.
Disclosure of Invention
The invention discloses a novel scheme for a phase-change latent heat type chip radiator, which adopts a scheme that a capillary wick for promoting the heat absorption and release circulation of working fluid by utilizing capillary force is arranged in a closed radiator shell, and solves the problem that the heat dissipation efficiency of the existing chip radiator needs to be improved.
The phase change latent heat type chip radiator comprises a closed radiator shell, wherein the radiator shell comprises a heat absorption end and a heat dissipation end, the heat absorption end is in heat transfer connection with a chip, the heat dissipation end is in heat transfer connection with an external heat dissipation environment, a capillary liquid absorption core and a working fluid are arranged in the radiator shell, the capillary liquid absorption core comprises a metal woven mesh, and the metal woven mesh comprises a metal mesh surface A arranged at the inner side of the heat absorption end and a metal mesh surface B arranged at the inner side of the heat dissipation end.
The working fluid at the inner side of the heat absorption end absorbs heat and then vaporizes, the vaporized working fluid is liquefied after releasing heat at the inner side of the heat dissipation end through the metal mesh surface B, and the liquefied working fluid after releasing heat returns to the inner side of the heat absorption end through the metal mesh surface A under the action of capillary force of the capillary wick.
Furthermore, a plurality of radiating fins are arranged on the outer side of the radiating end of the scheme, and the radiating fins improve the radiating efficiency of the radiating end.
Furthermore, the material of the metal mesh grid in the scheme is copper or aluminum or stainless steel or titanium.
Furthermore, the metal mesh grid of the scheme comprises a plurality of metal mesh layers, and each metal mesh layer comprises metal wires which are interwoven in a longitudinal and transverse mode.
Furthermore, the metal wire of the scheme is densely distributed with particle protrusions with the particle size of micro-nanometer.
Furthermore, the particle diameter of the particle bulge is 300 nm-500 nm, the wire diameter of the metal wire is 10 μm-100 μm, and the mesh diameter of the metal mesh layer is 10 μm-100 μm.
Furthermore, the metal wire of the scheme is provided with a plurality of groove structures with the axial extending groove drift diameter and the depth of micro-nano level along the circumferential direction.
Furthermore, the section of the groove structure in the scheme is in a T shape, an omega shape or a delta shape, the depth of the groove structure is 100 nm-1000 nm, the wire diameter of the metal wire is 20 mu m-100 mu m, and the mesh diameter of the metal mesh layer is 20 mu m-100 mu m.
Furthermore, the metal wire of the scheme is densely distributed with pit structures with the caliber and the depth of micro-nano level.
Furthermore, the depth of the pit structure is 100 nm-1000 nm, the caliber of the pit structure is 100 nm-300 nm, the wire diameter of the metal wire is 20 μm-100 μm, and the mesh diameter of the metal mesh layer is 20 μm-100 μm.
The phase-change latent heat type chip radiator adopts a chip radiator scheme that a capillary liquid absorption core which utilizes capillary force to promote heat absorption and release circulation of working fluid is arranged in a closed radiator shell, and has the characteristic of higher heat dissipation efficiency.
Drawings
Fig. 1 is a schematic diagram of a phase-change latent heat type chip heat spreader.
Figure 2 is a schematic diagram of an example capillary wick.
Figure 3 is a schematic of a wire of an example capillary wick.
Figure 4 is a schematic diagram of a second example capillary wick.
Figure 5 is a schematic of a wire of example two of a capillary wick.
Figure 6 is a schematic of an example capillary wick three.
Figure 7 is a schematic of the wires of capillary wick example three.
Wherein 100 is a heat sink shell, 110 is a heat absorption end, 120 is a heat dissipation end, 121 is a heat dissipation fin, 200 is a capillary wick, 210 is a metal mesh layer, 211 is a metal wire, 212 is a particle protrusion, 213 is a groove structure, 214 is a pit structure, and 300 is a working fluid.
Detailed Description
As shown in fig. 1, the phase change latent heat type chip heat sink of the present invention includes a closed heat sink shell, the heat sink shell includes a heat absorption end and a heat dissipation end, the heat absorption end is in heat transfer connection with a chip, the heat dissipation end is in heat transfer connection with an external heat dissipation environment, a capillary wick and a working fluid are disposed in the heat sink shell, the capillary wick includes a metal mesh grid, the metal mesh grid includes a metal mesh surface a disposed at an inner side of the heat absorption end and a metal mesh surface B disposed at an inner side of the heat dissipation end. The working fluid at the inner side of the heat absorption end absorbs heat and then vaporizes, the vaporized working fluid is liquefied after releasing heat at the inner side of the heat dissipation end through the metal mesh surface B, and the liquefied working fluid after releasing heat returns to the inner side of the heat absorption end through the metal mesh surface A under the action of capillary force of the capillary wick. According to the scheme, the chip radiator with the capillary wick which promotes the working fluid to absorb and release heat circulation by utilizing capillary force is arranged in the sealed radiator shell, the working fluid is promoted to return to the heat absorption end by utilizing the capillary force of the metal meshes in the capillary wick, the heat absorption and release circulation frequency is improved, and therefore the heat dissipation efficiency of the radiator is improved.
In order to improve the heat dissipation efficiency and increase the heat dissipation area, as shown in fig. 1, a plurality of heat dissipation fins are arranged on the outer side of the heat dissipation end of the scheme, and the heat dissipation fins improve the heat dissipation efficiency of the heat dissipation end. The material of the woven metal mesh of the present embodiment may also be preferably copper, aluminum, stainless steel or titanium, but is not limited to the above metal materials.
In order to realize the capillary function of the capillary liquid absorption core, the scheme discloses a specific structure, as shown in figures 1, 2, 4 and 6, the metal mesh grid of the scheme comprises a plurality of metal mesh layers, and the metal mesh layers comprise metal wires which are interwoven in a longitudinal and transverse mode. Based on above scheme, in order to further improve the heat transfer effect, this scheme discloses following example.
Example one
As shown in figures 2 and 3, the metal wire of the scheme is densely distributed with particle protrusions with the particle size of micro-nanometer. The surface with the particle bulge has more nucleation points relative to a smooth surface, can obviously reduce the superheat degree required by a boiling over-starting point, has a better heat exchange effect, is beneficial to surface bubble separation at low heat flow density, and is beneficial to improving surface wettability at high heat flow density. Based on the scheme, the particle diameter of the particle bulge is 300 nm-500 nm, the wire diameter of the metal wire is 10 mu m-100 mu m, and the mesh diameter of the metal mesh layer is 10 mu m-100 mu m.
The woven mesh of the present example is made of a material suitable for a wire mesh of copper, aluminum, stainless steel, titanium, or the like, but is not limited to the listed metal materials. The wire used to weave the mesh is not limited by its wire diameter or physical shape, nor is the wire diameter limited by the dimensions listed. The particle protrusions are not limited to a particular physical shape, as well as the size, distribution, and quantity recited. The metal wires of the metal mesh layer can be arranged in parallel or staggered mode, and the metal woven mesh can comprise a single metal mesh layer or a plurality of metal mesh layers.
Example two
As shown in fig. 4 and 5, the metal wire of the present solution is provided with a plurality of groove structures extending along the axial direction along the circumferential direction, wherein the groove structures have a micro-nanometer groove diameter and a depth. The surface with the groove structure obviously improves the capillary force relative to a smooth surface, particularly has a better heat exchange effect under the condition of long-distance capillary reflux, is favorable for surface bubble separation at low heat flow density and is favorable for improving the surface wettability at high heat flow density. Based on the scheme, the section of the groove structure in the scheme is in a T shape, an omega shape or a delta shape, the depth of the groove structure is 100 nm-1000 nm, the wire diameter of the metal wire is 20 mu m-100 mu m, and the mesh diameter of the metal mesh layer is 20 mu m-100 mu m.
The material of the woven mesh of the present example is suitable for a wire mesh of copper, aluminum, stainless steel, titanium, or the like, but is not limited to the listed metal materials. The wire used in the woven mesh is not limited by its wire diameter or physical shape, nor is the wire diameter limited by the dimensions listed. The trench structure is not limited to the above shape limitations, as well as the enumerated dimensional range limitations. The metal wires of the metal mesh layer can be arranged in parallel or staggered mode, and the metal woven mesh can comprise a single metal mesh layer or a plurality of metal mesh layers.
EXAMPLE III
As shown in figures 6 and 7, the metal wire of the scheme is densely distributed with pit structures with the caliber and the depth of micro-nano level. The surface with the pit structure has more nucleation points relative to a smooth surface, can obviously reduce the superheat degree required by a boiling over-starting point, has a better heat exchange effect, is beneficial to surface bubble separation at low heat flow density, and is beneficial to improving surface wettability at high heat flow density. Based on the scheme, the depth of the pit structure is 100 nm-1000 nm, the caliber of the pit structure is 100 nm-300 nm, the wire diameter of the metal wire is 20 mu m-100 mu m, and the mesh diameter of the metal mesh layer is 20 mu m-100 mu m.
The material of the woven mesh of the present example is suitable for a wire mesh of copper, aluminum, stainless steel, titanium, or the like, but is not limited to the listed metal materials. The wire used in the woven mesh is not limited by its wire diameter or physical shape, nor is the wire diameter limited by the dimensions listed. The dimple structure is not limited to a particular physical shape, as well as the size, distribution, and number of the features listed. The metal wires of the metal mesh layer can be arranged in parallel or staggered mode, and the metal woven mesh can comprise a single metal mesh layer or a plurality of metal mesh layers.
The scheme discloses a phase-change latent heat type chip radiator, which adopts a capillary liquid absorption core with a micro-nano scale improved structure. The capillary wick is of a metal woven mesh structure, and micro-nano scale particle protrusions, groove structures and pit structures are formed on metal wires of a metal mesh layer of the metal woven mesh, so that the heat exchange effect of the structure is improved remarkably, and the heat dissipation efficiency of the chip radiator is improved.
The phase-change latent heat type chip radiator of the present invention is not limited to the disclosure of the specific embodiments, the technical solutions presented in the embodiments can be extended based on the understanding of those skilled in the art, and the simple alternatives made by those skilled in the art according to the present invention in combination with the common general knowledge also belong to the scope of the present invention.
Claims (10)
1. The phase change latent heat type chip radiator is characterized by comprising a closed radiator shell, wherein the radiator shell comprises a heat absorption end and a heat dissipation end, the heat absorption end is in heat transfer connection with a chip, the heat dissipation end is in heat transfer connection with an external heat dissipation environment, a capillary liquid absorption core and working fluid are arranged in the radiator shell, the capillary liquid absorption core comprises a metal woven mesh, the metal woven mesh comprises a metal mesh surface A arranged at the inner side of the heat absorption end and a metal mesh surface B arranged at the inner side of the heat dissipation end,
the working fluid at the inner side of the heat absorption end absorbs heat and then vaporizes, the vaporized working fluid releases heat and then liquefies at the inner side of the heat dissipation end through the metal mesh surface B, and the liquefied working fluid after heat release returns to the inner side of the heat absorption end through the metal mesh surface A under the capillary force action of the capillary wick.
2. The phase-change latent heat type chip heat sink according to claim 1, wherein a plurality of heat dissipation fins are provided on an outer side of the heat dissipation end, the heat dissipation fins improving heat dissipation efficiency of the heat dissipation end.
3. The phase-change latent heat type chip heat sink according to claim 1, wherein the material of the metal mesh grid is copper or aluminum or stainless steel or titanium.
4. The phase change latent heat chip heat spreader according to claim 1, wherein the metal mesh grid comprises a plurality of metal mesh layers, the metal mesh layers comprising metal wires that are interwoven in a crisscross manner.
5. The phase-change latent heat chip heat sink according to claim 4, wherein the metal wire is densely covered with particle protrusions having a particle size of micro-nanometer.
6. The phase-change latent heat type chip heat spreader according to claim 5, wherein the particle diameter of the particle projection is 300nm to 500nm, the wire diameter of the wire is 10 μm to 100 μm, and the mesh diameter of the metal mesh layer is 10 μm to 100 μm.
7. The phase-change latent heat chip heat sink according to claim 4, wherein the metal wire is provided with a plurality of groove structures extending along the axial direction along the circumferential direction, and the groove structures have a micro-nanometer depth.
8. The latent heat of phase change chip heat spreader according to claim 7, wherein the groove structure has a cross-section of a "T" shape, an "Ω" shape, or a "Δ" shape, a depth of the groove structure is 100nm to 1000nm, a wire diameter of the wire is 20 μm to 100 μm, and a mesh diameter of the mesh layer is 20 μm to 100 μm.
9. The phase-change latent heat type chip heat sink according to claim 4, wherein the metal wire is densely provided with pit structures with caliber and depth of micro-nanometer level.
10. The phase-change latent heat type chip heat sink according to claim 9, wherein a depth of the pit structure is 100nm to 1000nm, a diameter of the pit structure is 100nm to 300nm, a wire diameter of the wire is 20 μm to 100 μm, and a mesh diameter of the metal mesh layer is 20 μm to 100 μm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010772610.9A CN113571486A (en) | 2020-08-04 | 2020-08-04 | Phase-change latent heat type chip radiator |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010772610.9A CN113571486A (en) | 2020-08-04 | 2020-08-04 | Phase-change latent heat type chip radiator |
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| CN113571486A true CN113571486A (en) | 2021-10-29 |
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| CN202010772610.9A Pending CN113571486A (en) | 2020-08-04 | 2020-08-04 | Phase-change latent heat type chip radiator |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1982826A (en) * | 2005-12-12 | 2007-06-20 | 财团法人工业技术研究院 | Penetrating support structure and its production |
| CN102374808A (en) * | 2010-08-26 | 2012-03-14 | 富准精密工业(深圳)有限公司 | Flat-plate type vapor chamber |
| CN209978682U (en) * | 2019-04-29 | 2020-01-21 | 深圳市尚翼实业有限公司 | Heat pipe |
| CN111076592A (en) * | 2019-12-31 | 2020-04-28 | 中国核动力研究设计院 | Treatment method of alkali metal heat pipe liquid absorption core |
-
2020
- 2020-08-04 CN CN202010772610.9A patent/CN113571486A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1982826A (en) * | 2005-12-12 | 2007-06-20 | 财团法人工业技术研究院 | Penetrating support structure and its production |
| CN102374808A (en) * | 2010-08-26 | 2012-03-14 | 富准精密工业(深圳)有限公司 | Flat-plate type vapor chamber |
| CN209978682U (en) * | 2019-04-29 | 2020-01-21 | 深圳市尚翼实业有限公司 | Heat pipe |
| CN111076592A (en) * | 2019-12-31 | 2020-04-28 | 中国核动力研究设计院 | Treatment method of alkali metal heat pipe liquid absorption core |
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