CN113562685A - Blind hole structure of MEMS device - Google Patents
Blind hole structure of MEMS device Download PDFInfo
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- CN113562685A CN113562685A CN202110842697.7A CN202110842697A CN113562685A CN 113562685 A CN113562685 A CN 113562685A CN 202110842697 A CN202110842697 A CN 202110842697A CN 113562685 A CN113562685 A CN 113562685A
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- 239000000758 substrate Substances 0.000 claims abstract description 40
- 238000013016 damping Methods 0.000 claims abstract description 24
- 238000005530 etching Methods 0.000 claims description 68
- 238000001020 plasma etching Methods 0.000 claims description 43
- 238000000034 method Methods 0.000 claims description 30
- 238000004519 manufacturing process Methods 0.000 claims description 21
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 claims description 12
- 239000001301 oxygen Substances 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000000708 deep reactive-ion etching Methods 0.000 claims description 6
- 230000003647 oxidation Effects 0.000 claims description 6
- 238000007254 oxidation reaction Methods 0.000 claims description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 5
- 230000000670 limiting effect Effects 0.000 claims description 5
- 229910052710 silicon Inorganic materials 0.000 claims description 5
- 239000010703 silicon Substances 0.000 claims description 5
- 238000001259 photo etching Methods 0.000 claims description 4
- 238000001039 wet etching Methods 0.000 claims description 4
- 229910052681 coesite Inorganic materials 0.000 claims description 3
- 229910052906 cristobalite Inorganic materials 0.000 claims description 3
- 229920002120 photoresistant polymer Polymers 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 229910052682 stishovite Inorganic materials 0.000 claims description 3
- 229910052905 tridymite Inorganic materials 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 claims description 2
- 230000002035 prolonged effect Effects 0.000 abstract description 5
- 238000001125 extrusion Methods 0.000 abstract description 3
- 230000035945 sensitivity Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000002238 attenuated effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000005459 micromachining Methods 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- -1 LIGA Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/0032—Packages or encapsulation
- B81B7/007—Interconnections between the MEMS and external electrical signals
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00261—Processes for packaging MEMS devices
- B81C1/00301—Connecting electric signal lines from the MEMS device with external electrical signal lines, e.g. through vias
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2207/00—Microstructural systems or auxiliary parts thereof
- B81B2207/07—Interconnects
Abstract
The invention discloses a blind hole structure of an MEMS (micro electro mechanical system) device, which belongs to the technical field of MEMS (micro electro mechanical system), and comprises a device body, wherein the device body is formed by stacking a substrate, a device layer and a cover plate from bottom to top; the XY axis stopping block penetrates through the XY stopping through hole on the device layer, and two ends of the XY axis stopping block respectively abut against the cover plate and the substrate; the blind holes are formed in the upper surface and the lower surface of the device layer, so that the damping condition of a contact interface is improved, a larger frequency response and an output signal are obtained, the output sensitivity is high, the integral rigidity of the device layer is kept, the integral dynamic performance of the device is improved, and the service life of the device is prolonged; the blind holes are formed in the substrate and the cover plate, so that the damping of an extrusion interface is improved, and the device has 10 times of range overload resistance.
Description
Technical Field
The invention belongs to the technical field of micro electro mechanical systems, and particularly relates to a blind hole structure of an MEMS device.
Background
Microelectromechanical systems, also called microelectromechanical systems, microsystems, micromachines, etc., refer to high-tech devices having dimensions of a few millimeters or even smaller. The internal structure of the micro-electro-mechanical system is generally in the micron or even nanometer scale, and the micro-electro-mechanical system is an independent intelligent system. The micro electro mechanical system is developed on the basis of microelectronic technology, and integrates high-tech electronic mechanical devices manufactured by technologies such as photoetching, corrosion, thin film, LIGA, silicon micromachining, non-silicon micromachining, precision machining and the like.
When the MEMS device generates periodic relative motion inside, the movable structure with large mass can generate a certain degree of simple harmonic vibration due to self inertia and the existence of gas in the cavity, the damping factor of the simple harmonic vibration generally reflects the damping magnitude of the device, and when the simple harmonic vibration is too fast in damping, namely the damping is too large, the vibration mode of the device is greatly inhibited, and the output signal of the device is greatly attenuated; when the simple harmonic vibration is attenuated slowly, that is, the damping is too small, the interference mode of the device cannot be effectively suppressed, and although the output signal is improved, the frequency response range is compressed. Meanwhile, too small damping can cause resonance of the system and slow attenuation, and finally, the motion amplitude of the sensitive unit of the sensor is too large, so that the movable structure is damaged.
Chinese patent (CN201710804342.2) discloses a packaging method of a MEMS device, which includes etching a blind via on a first surface of a first substrate; forming a conductive column in the blind hole; manufacturing and forming a first wiring layer on the first surface, wherein the first wiring layer is in contact with the conductive columns; etching a second surface of the first substrate opposite to the first surface until the blind holes become through holes and the conductive posts are exposed; forming a first bonding ring on the first wiring layer; manufacturing and forming an MEMS device and a device lead-out wire connected with the MEMS device on a second substrate; manufacturing and forming a second bonding ring on the second substrate, wherein the second bonding ring is connected with the device lead-out wire; bonding the first bonding ring and the second bonding ring.
At present, an MEMS device is designed into a sandwich structure, an upper layer and a lower layer of the sandwich structure are fixed polar plates, a middle layer is a movable polar plate, the movable polar plate performs simple harmonic vibration in the vertical direction, and through holes are formed in the movable polar plate, so that the dynamic characteristic of the movable structure of the device is improved.
Disclosure of Invention
The invention aims to: the blind hole structure of the MEMS device is provided for solving the problems of low overall rigidity, poor damping characteristic and low output sensitivity of the device caused by the fact that the MEMS device uses a sandwich structure and a through hole is formed in a movable polar plate.
In order to achieve the purpose, the invention adopts the following technical scheme: a blind via structure for a MEMS device, comprising:
the device comprises a device body, a substrate, a device layer and a cover plate, wherein the device body is formed by stacking the substrate, the device layer and the cover plate from bottom to top, a plurality of blind holes are formed in the device body and distributed at the intersection of the device layer and the substrate, and a plurality of blind holes are distributed at the intersection of the device layer and the cover plate;
the XY axis stopping block penetrates through the XY stopping through hole on the device layer, and two ends of the XY axis stopping block respectively abut against the cover plate and the substrate;
a Z-axis stop disposed on the cover plate, the Z-axis stop being located between the cover plate and the device layer.
As a further description of the above technical solution:
the blind holes are formed in the upper surface and the lower surface of the device layer, and openings of the blind holes face the cover plate and the substrate respectively.
As a further description of the above technical solution:
the blind holes are formed in the cover plate and the substrate, and openings of the blind holes face the device layer.
As a further description of the above technical solution:
the shape of the XY stop through hole is the same as that of the blind hole.
As a further description of the above technical solution:
the shape of the blind hole includes, but is not limited to, a square hole, a circular hole, a triangular hole, and a hexagonal hole.
As a further description of the above technical solution:
the device body is manufactured by the following steps:
1) etching the back of the device layer: selecting an SOI wafer with the thickness of 300 mu m, etching a Z-axis stopper by RIE (reactive ion etching), and manufacturing a Z-axis limiting gap with the etching depth of 2-3 mu m;
2) XY axis stopper etching and damping gap etching: preparing a SiO2 thermal oxygen layer with the thickness of 200nm by a thermal oxidation process on the back of the device layer, spraying photoresist, photoetching and developing, and etching a damping gap between the device layer and the substrate by wet corrosion, wherein the damping gap is 5 mu m;
3) device layer back RIE etching: etching the blind hole on the back of the device layer by using a RIE (reactive ion etching) dry method, wherein the depth of the blind hole is 80 mu m, reserving an XY-axis stopping gap by using the RIE dry etching, and completely releasing the movable structure gap;
4) silicon-silicon bonding: the substrate is bonded with the device layer silicon-silicon;
5) etching the front side of the device layer by RIE: etching a blind hole on the front side of the device layer by using an RIE (reactive ion etching) dry method, wherein the depth of the blind hole is 30 mu m, and etching by using the RIE dry method and accurately releasing the XY axis backstop;
6) manufacturing a cover plate: etching depth of 2-3 μm by RIE dry method, manufacturing Z-axis stopper, etching shallow groove with depth of 2 μm, and reserving gap between movable structure layer and cover plate;
7) silicon-silicon bonding: the cover plate is bonded with the device layer silicon-silicon.
As a further description of the above technical solution:
the thermal oxidation process flow is high-temperature dry oxygen-wet oxygen-dry oxygen, the time is 60min, the temperature is 1180 ℃, and the temperature of the wet oxygen is 95 ℃.
As a further description of the above technical solution:
the device body is manufactured by the following steps:
1) substrate etching: etching other areas except the XY axis stop by using an RIE (reactive ion etching) dry method to manufacture a blind hole array, wherein the depth of each blind hole is 80 mu m;
2) etching the back of the device layer: selecting an SOI wafer with the thickness of 300 mu m as the device layer, and etching the other areas of the back surface of the device layer except the XY axis stops by wet etching, wherein the etching depth is 5 mu m;
3) silicon-silicon bonding: the substrate is bonded with the device layer silicon-silicon;
4) DRIE deep silicon etching: etching the front surface of the device layer by adopting a DRIE (deep etching) process, and completely releasing the movable structure and the XY-axis stop;
5) manufacturing a cover plate: etching other areas except the XY axis stop by using an RIE (reactive ion etching) dry method to manufacture a blind hole array, wherein the depth of each blind hole is 80 mu m;
6) silicon-silicon bonding: the cover plate is bonded with the device layer silicon-silicon.
In summary, due to the adoption of the technical scheme, the invention has the beneficial effects that:
1. according to the invention, the blind holes are formed on the upper surface and the lower surface of the device layer, so that the damping condition of a contact interface is improved, a larger frequency response and an output signal are obtained, the output sensitivity is high, the integral rigidity of the device layer is kept, the integral dynamic performance of the device is improved, and the service life of the device is prolonged.
2. In the invention, the blind holes are manufactured on the substrate and the cover plate, so that the damping of an extrusion interface is improved, the device has 10 times of range overload resistance, the overall dynamic performance of the device is improved, and the service life of the device is prolonged.
Drawings
FIG. 1 is a schematic structural diagram of an embodiment of a blind via structure of a MEMS device.
FIG. 2 is a schematic structural diagram of a second embodiment of a blind via structure of a MEMS device.
FIG. 3 is a schematic structural diagram of an embodiment of a device layer in a blind via structure of a MEMS device.
FIG. 4 is a schematic structural diagram of a device layer of a blind via structure of a MEMS device according to a second embodiment.
FIG. 5 is a schematic diagram of three structures of an embodiment of a device layer of a blind via structure of a MEMS device.
FIG. 6 is a diagram of a device layer of a blind via structure of a MEMS device according to an embodiment.
Illustration of the drawings:
1. a device body; 2. a substrate; 3. a device layer; 4. a cover plate; 5. blind holes; 6. an XY axis stop; 7. an XY stop through hole; 8. and a Z-axis stop.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present invention.
Referring to fig. 1-6, the present invention provides a technical solution: a blind via structure for a MEMS device, comprising:
the device comprises a device body 1, a substrate 2, a device layer 3 and a cover plate 4, wherein the device body 1 is formed by stacking from bottom to top, a plurality of blind holes 5 are formed in the device body 1, the plurality of blind holes 5 are distributed at the intersection of the device layer 3 and the substrate 2, and the plurality of blind holes 5 are distributed at the intersection of the device layer 3 and the cover plate 4;
an XY-axis stopper 6 penetrating through an XY-stopper through hole 7 on the device layer 3, wherein two ends of the XY-axis stopper 6 respectively abut against the cover plate 4 and the substrate 2;
a Z-axis stop 8 disposed on the cover plate 4, wherein the Z-axis stop 8 is located between the cover plate 4 and the device layer 3;
the blind holes 5 are formed in the upper surface and the lower surface of the device layer 3, openings of the blind holes 5 face the cover plate 4 and the substrate 2 respectively, and the blind holes 5 are formed in the upper surface and the lower surface of the device layer 3, so that the damping condition of a contact interface is improved, larger frequency response and output signals are obtained, the integral rigidity of the device layer 3 is kept, the integral dynamic performance of the device is improved, and the service life of the device is prolonged;
the blind holes 5 are formed in the cover plate 4 and the substrate 2, the openings of the blind holes 5 face the device layer 3, and the blind holes 5 are formed in the substrate 2 and the cover plate 4, so that the damping of an extrusion interface is improved, the device has 10 times of range overload resistance, the overall dynamic performance of the device is improved, and the service life of the device is prolonged;
the shape of the XY stop through hole 7 is the same as that of the blind hole 5;
the shape of the blind hole 5 includes but is not limited to a square hole, a circular hole, a triangular hole and a hexagonal hole;
the device body 1 is manufactured by the following steps:
1) etching the back of the device layer 3: selecting an SOI wafer with the thickness of 300 mu m, etching the Z-axis stopper 8 by RIE (reactive ion etching), and manufacturing a Z-axis limiting gap with the etching depth of 2-3 mu m;
2) etching of XY axis stopper 6 and damping gap: preparing a SiO2 thermal oxygen layer with the thickness of 200nm by a thermal oxidation process on the back of the device layer 3, spraying photoresist, photoetching and developing, and etching a damping gap between the device layer 3 and the substrate 2 by wet corrosion, wherein the damping gap is 5 mu m;
3) device layer 3 back side RIE etching: etching a blind hole 5 on the back of the device layer 3 by using an RIE (reactive ion etching) dry method, wherein the depth of the blind hole 5 is 80 microns, and etching by using the RIE dry method to leave a gap of an XY axis stopper 6 and completely release the gap of the movable structure;
4) silicon-silicon bonding: the substrate 2 is silicon-silicon bonded with the device layer 3;
5) device layer 3 front side RIE etching: etching a blind hole 5 on the front surface of the device layer 3 by an RIE (reactive ion etching) dry method, wherein the depth of the blind hole 5 is 30 mu m, and etching by the RIE dry method and accurately releasing the XY axis stopper 6;
6) and (3) manufacturing a cover plate 4: etching depth of 2-3 μm by RIE dry method, manufacturing Z-axis stopper 8, etching shallow groove with depth of 2 μm, and reserving gap between movable structural layer and cover plate 4;
7) silicon-silicon bonding: the cover plate 4 is bonded with the device layer 3 through silicon-silicon;
the thermal oxidation process flow is high-temperature dry oxygen-wet oxygen-dry oxygen, the time is 60min, the temperature is 1180 ℃, and the temperature of the wet oxygen is 95 ℃;
the device body 1 is manufactured by the following steps:
1) etching of the substrate 2: etching other areas except the XY-axis stop 6 by using an RIE (reactive ion etching) dry method to manufacture an array of blind holes 5, wherein the depth of each blind hole 5 is 80 mu m;
2) etching the back of the device layer 3: selecting an S0I wafer with the thickness of 300 mu m as the device layer 3, and etching the other areas of the back surface of the device layer 3 except the XY-axis stop 6 by wet etching, wherein the etching depth is 5 mu m;
3) silicon-silicon bonding: the substrate 2 is silicon-silicon bonded with the device layer 3;
4) DRIE deep silicon etching: etching the front surface of the device layer 3 by adopting a DRIE (deep etching) process, and completely releasing the movable structure and the XY-axis stopper 6;
5) and (3) manufacturing a cover plate 4: etching other areas except the XY-axis stop 6 by using an RIE (reactive ion etching) dry method to manufacture an array of blind holes 5, wherein the depth of each blind hole 5 is 80 mu m;
6) silicon-silicon bonding: the cover plate 4 is silicon-silicon bonded to the device layer 3.
The working principle is as follows: when the device body 1 generates periodic motion inside, the device layer 3 moves between the cover plate 4 and the substrate 2, the device layer 3 makes simple harmonic vibration in the vertical direction, the Z-axis stop 8 has a limiting effect on the device layer 3 in the vertical direction, the XY-axis stop 6 has a limiting effect on the device layer 3 in the X-axis direction and the Y-axis direction, gas between the device layer 3 and the cover plate 4 impacts in the blind hole 5 and has an even damping effect on the device layer 3, gas between the device layer 3 and the substrate 2 impacts in the blind hole 5 and has an even damping effect on the device layer 3.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any person skilled in the art should be considered to be within the technical scope of the present invention, and the technical solutions and the inventive concepts thereof according to the present invention should be equivalent or changed within the scope of the present invention.
Claims (8)
1. A blind hole structure of a MEMS device is characterized in that: the method comprises the following steps:
the device comprises a device body (1) and a substrate (2), a device layer (3) and a cover plate (4), wherein the device body (1) is formed by stacking from bottom to top, a plurality of blind holes (5) are formed in the device body (1), the blind holes (5) are distributed at the intersection of the device layer (3) and the substrate (2), and the blind holes (5) are distributed at the intersection of the device layer (3) and the cover plate (4);
an XY-axis stopper (6) which penetrates through an XY-stopper through hole (7) in the device layer (3), wherein two ends of the XY-axis stopper (6) respectively abut against the cover plate (4) and the substrate (2);
a Z-axis stop (8) disposed on the cover plate (4), the Z-axis stop (8) being located between the cover plate (4) and the device layer (3).
2. Blind via structure of a MEMS device according to claim 1, characterized in that a plurality of said blind vias (5) open on the upper and lower surfaces of the device layer (3), said blind vias (5) opening towards the cover plate (4) and the substrate (2), respectively.
3. Blind via structure of a MEMS device according to claim 1, characterized in that a plurality of said blind vias (5) open on said cover plate (4) and on said substrate (2), said blind vias (5) opening towards said device layer (3).
4. Blind hole structure of a MEMS device according to claim 1, characterized in that the shape of the XY-stop via (7) is the same as the shape of the blind hole (5).
5. The blind via structure of a MEMS device according to claim 4, characterized in that the shape of the blind via (5) includes but is not limited to square, circular, triangular and hexagonal vias.
6. Blind via structure of a MEMS device according to claim 2, characterized in that the device body (1) is made by the following steps:
1) etching the back of the device layer (3): selecting an SOI wafer with the thickness of 300 mu m, etching a Z-axis stopper (8) by RIE (reactive ion etching), and manufacturing a Z-axis limiting gap with the etching depth of 2-3 mu m;
2) etching an XY axis stopper (6) and etching a damping gap: preparing a SiO2 thermal oxygen layer with the thickness of 200nm by a thermal oxidation process on the back of the device layer (3), spraying photoresist, photoetching and developing, and etching a damping gap between the device layer (3) and the substrate (2) by wet etching, wherein the damping gap is 5 mu m;
3) device layer (3) back side RIE etching: etching the blind hole (5) on the back of the device layer (3) by using an RIE (reactive ion etching) dry method, wherein the depth of the blind hole (5) is 80 mu m, and etching by using the RIE dry method to leave a gap of an XY axis stopper (6) and completely release the gap of the movable structure;
4) silicon-silicon bonding: the substrate (2) is bonded with the device layer (3) through silicon-silicon;
5) device layer (3) front side RIE etching: etching a blind hole (5) on the front surface of the device layer (3) by an RIE (reactive ion etching) dry method, wherein the depth of the blind hole (5) is 30 mu m, and etching by the RIE dry method and accurately releasing the XY axis stopper (6);
6) manufacturing a cover plate (4): etching depth of 2-3 μm by RIE dry method, manufacturing Z-axis stopper (8), etching shallow slot with depth of 2 μm, and reserving gap between movable structural layer and cover plate (4);
7) silicon-silicon bonding: the cover plate (4) is silicon-silicon bonded with the device layer (3).
7. The blind via structure of MEMS device as claimed in claim 6, wherein the thermal oxidation process is dry-wet-dry-oxygen at high temperature for 60min, at 1180 ℃ and 95 ℃ for wet oxygen.
8. Blind hole structure of a MEMS device according to claim 3, characterized in that the device body (1) is made by the following steps:
1) substrate (2) etching: etching other areas except the XY-axis stop (6) by adopting an RIE (reactive ion etching) dry method to manufacture a blind hole (5) array, wherein the depth of the blind hole (5) is 80 mu m;
2) etching the back of the device layer (3): selecting an SOI wafer with the thickness of 300 mu m for the device layer (3), and etching the other areas of the back surface of the device layer (3) except the XY-axis stop (6) by wet etching, wherein the etching depth is 5 mu m;
3) silicon-silicon bonding: the substrate (2) is bonded with the device layer (3) through silicon-silicon;
4) DRIE deep silicon etching: etching the front surface of the device layer (3) by adopting a DRIE (deep etching) process, and completely releasing the movable structure and the XY-axis stopper (6);
5) manufacturing a cover plate (4): adopting RlE dry etching to manufacture a blind hole (5) array in other areas except the XY axis stop (6), wherein the depth of the blind hole (5) is 80 mu m;
6) silicon-silicon bonding: the cover plate (4) is silicon-silicon bonded with the device layer (3).
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| CN101645401A (en) * | 2009-09-10 | 2010-02-10 | 清华大学 | Circuit device three-dimensional integrative method |
| CN103424107A (en) * | 2012-05-14 | 2013-12-04 | 罗伯特·博世有限公司 | Micromechanical inertial sensor and method for manufacturing same |
| CN102701137A (en) * | 2012-06-19 | 2012-10-03 | 中国电子科技集团公司第十三研究所 | Anti-overload MEMS (Micro Electro Mechanical Systems) device with three-dimensional stop structure and machining method thereof |
| CN103234567A (en) * | 2013-03-26 | 2013-08-07 | 中北大学 | MEMS (micro-electromechanical systems) capacitive ultrasonic sensor on basis of anodic bonding technology |
| CN106029555A (en) * | 2013-12-06 | 2016-10-12 | 埃普科斯股份有限公司 | Method for packaging a microelectronic device in a hermetically sealed cavity and managing the atmosphere of the cavity with a dedicated hole |
| US20160167958A1 (en) * | 2014-10-14 | 2016-06-16 | The Regents Of The University Of California | Through-wafer interconnects for mems double-sided fabrication process (twids) |
| CN109467045A (en) * | 2017-09-08 | 2019-03-15 | 中国科学院苏州纳米技术与纳米仿生研究所 | The packaging method of MEMS device and the preparation method of microactrator |
| CN107941407A (en) * | 2017-11-19 | 2018-04-20 | 东北大学 | A kind of micro-voltage high-overload sensor chip |
| CN109160484A (en) * | 2018-09-03 | 2019-01-08 | 合肥工业大学 | A kind of piezoelectric type MEMS acceleration transducer and preparation method thereof |
| CN110467148A (en) * | 2019-08-08 | 2019-11-19 | 北京航天控制仪器研究所 | A kind of wafer-level package of MEMS chip structure and its processing method |
| US20210130162A1 (en) * | 2019-11-06 | 2021-05-06 | Vanguard International Semiconductor Singapore Pte. Ltd. | Mems devices and methods of forming thereof |
| CN111796119A (en) * | 2020-07-20 | 2020-10-20 | 合肥工业大学 | Resonant acceleration sensor based on nano piezoelectric beam and preparation method thereof |
| CN112624031A (en) * | 2020-12-18 | 2021-04-09 | 北京航天控制仪器研究所 | MEMS structure with over-etching barrier layer and preparation method thereof |
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