CN113556026B - PIM device and manufacturing method thereof - Google Patents

PIM device and manufacturing method thereof Download PDF

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Publication number
CN113556026B
CN113556026B CN202110960215.8A CN202110960215A CN113556026B CN 113556026 B CN113556026 B CN 113556026B CN 202110960215 A CN202110960215 A CN 202110960215A CN 113556026 B CN113556026 B CN 113556026B
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copper
chip
igbt
clip
igbt chip
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CN113556026A (en
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邓华鲜
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Chengdu Xiexin Technology Co., Ltd
LESHAN SHARE ELECTRONIC Co.,Ltd.
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Chengdu Xiexin Technology Co ltd
LESHAN SHARE ELECTRONIC CO Ltd
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    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M1/00—Details of apparatus for conversion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49811—Additional leads joined to the metallisation on the insulating substrate, e.g. pins, bumps, wires, flat leads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49838—Geometry or layout
    • H01L23/49844—Geometry or layout for devices being provided for in H01L29/00
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/498—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers
    • H01L23/49866—Leads, i.e. metallisations or lead-frames on insulating substrates, e.g. chip carriers characterised by the materials
    • H01L23/49894—Materials of the insulating layers or coatings
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M7/00—Conversion of ac power input into dc power output; Conversion of dc power input into ac power output
    • H02M7/003—Constructional details, e.g. physical layout, assembly, wiring or busbar connections
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
    • H02P25/00—Arrangements or methods for the control of AC motors characterised by the kind of AC motor or by structural details
    • H02P25/16—Arrangements or methods for the control of AC motors characterised by the kind of AC motor or by structural details characterised by the circuit arrangement or by the kind of wiring
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02P—CONTROL OR REGULATION OF ELECTRIC MOTORS, ELECTRIC GENERATORS OR DYNAMO-ELECTRIC CONVERTERS; CONTROLLING TRANSFORMERS, REACTORS OR CHOKE COILS
    • H02P27/00—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage
    • H02P27/04—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage
    • H02P27/06—Arrangements or methods for the control of AC motors characterised by the kind of supply voltage using variable-frequency supply voltage, e.g. inverter or converter supply voltage using dc to ac converters or inverters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Geometry (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
  • Inverter Devices (AREA)

Abstract

The invention relates to the technical field of semiconductor devices, in particular to a PIM device and a manufacturing method thereof, wherein the PIM device comprises a copper-clad ceramic substrate, and a three-phase rectifying unit, a three-phase inverting unit, a braking unit and a temperature control detection NTC device which are arranged on the copper-clad ceramic substrate; the three-phase rectifying unit comprises six diode chips arranged on the copper-clad ceramic substrate and clip copper sheets which correspond to the six diode chips one by one; the three-phase inversion unit comprises six IGBT chips, six clip emitter copper sheets which correspond to the six IGBT chips one by one and six clip control electrode copper sheets which correspond to the six IGBT chips one by one; the brake unit comprises a diode chip VII, an IGBT chip VII, a clip copper sheet, a clip emitter copper sheet and a clip control electrode copper sheet. The PIM device has the advantages of small structure, convenience in use, capability of simplifying a circuit structure by applying the PIM device to a related circuit, stable performance based on a clip process adopted by the PIM device, and safety and reliability of a circuit using the PIM device.

Description

PIM device and manufacturing method thereof
Technical Field
The invention relates to the technical field of semiconductor devices, in particular to a PIM device and a manufacturing method thereof.
Background
The PIM circuit is a functional circuit integrating a rectifying circuit, an inverter circuit, a braking circuit and a temperature control switch, and in the traditional PIM circuit, a plurality of independent single tubes (including a rectifying single tube, an inverter single tube and the like) are connected to form the PIM circuit, so that the PIM circuit is large in size, complex in structure, easy to break down and not easy to maintain. Therefore, the IGBT power integration module PIM (power interleaved dummy) gradually replaces the traditional PIM circuit, and the IGBT power integration module PIM means that the diode rectifier module and the IGBT module are integrated on the same module, so as to improve the power density of the IGBT circuit, reduce the distributed inductance generated by power-on, simplify the installation process of the PIM module, and facilitate maintenance. At present, the PIM module of 25A/40A/50A/75A is adopted in the following miniwatt frequency conversion circuit of 15kW in the market, mainly uses in fields such as converter, servo motor, frequency conversion household electrical appliances, medical system, along with the rapid development of frequency conversion trade, the demand to the PIM module constantly increases, and current PIM device has following problem:
1. in a hardware structure of an internal circuit of the PIM device, an aluminum wire process is generally adopted, and due to the fact that an IGBT chip is high in power when applied, the aluminum wire process is low in current density, poor in electrifying capacity, high in resistance value and high in welding area probability, the PIM device is low in safety performance, and the occurrence rate of circuit faults is increased;
2. due to lower safety performance, the PIM device has short service life, which is particularly reflected in that the thermal fatigue life is easy to lose efficacy;
3. the process difficulty is high, the production efficiency is low, the product percent of pass is low, and the specific expression is that the surface of the device must not be oxidized, otherwise, the contact failure is caused, the adjustable range of the ultrasonic welding machine used in the aluminum wire process is narrow, the bonding depth is too shallow and is easy to fall off, and the internal oxide layer is easily damaged when the depth is too deep, so that the device fails.
Disclosure of Invention
Aiming at the problems in the prior art, the technical scheme provides the PIM device and the manufacturing method thereof, the clip process is adopted to replace the traditional aluminum wire process, the heat dissipation efficiency of the product is improved, and the thermal fatigue life of the PIM device is prolonged.
In order to achieve the purpose, the invention provides the following technical scheme:
a PIM device comprises a copper-clad ceramic substrate, a three-phase rectifying unit, a three-phase inverting unit, a braking unit and a temperature control detection NTC device; the three-phase rectifying unit comprises six diode chips arranged on a copper-clad ceramic substrate and clip copper sheets in one-to-one correspondence with the six diode chips, wherein the six diode chips are a diode chip I, a diode chip II, a diode chip III, a diode chip IV, a diode chip V and a diode chip VI respectively; the six cathodes are connected to the copper-clad ceramic substrate, and the cathodes of the diode chip I, the diode chip II and the diode chip III are connected through the copper-clad ceramic substrate; one ends of six clip copper sheets are respectively and fixedly connected with anodes of six diode chips, the other ends of the six clip copper sheets are respectively and fixedly connected with a copper-coated ceramic substrate, so that the anode of a diode chip I is connected with the cathode of a diode chip IV, the anode of a diode chip II is connected with the cathode of a diode chip V, the anode of a diode chip III is connected with the cathode of a diode chip VI, and the anode of the diode chip IV, the anode of the diode chip V and the anode of the diode chip VI are connected together; the three-phase inversion unit comprises six IGBT chips, six clip emitter copper sheets corresponding to the six IGBT chips one by one and six clip control electrode copper sheets corresponding to the six IGBT chips one by one, wherein the six IGBT chips are an IGBT chip I, an IGBT chip II, an IGBT chip III, an IGBT chip IV, an IGBT chip V and an IGBT chip VI respectively; the collecting electrodes of the six IGBT chips are connected to the copper-clad ceramic substrate, and the collecting electrodes of the IGBT chip I, the IGBT chip II and the IGBT chip III are connected through the copper-clad ceramic substrate; one end of each of six clip emitter copper sheets is fixedly connected with the emitter of each of six IGBT chips, the other end of each of the six clip emitter copper sheets is fixedly connected with the copper-clad ceramic substrate, one end of each of six clip control electrode copper sheets is fixedly connected with the control electrodes of the six IGBT chips, the other end of each of the six clip control electrode copper sheets is fixedly connected with the copper-clad ceramic substrate, so that the emitter of the IGBT chip I is connected with the collector of the IGBT chip IV, the emitter of the IGBT chip II is connected with the collector of the IGBT chip V, and the emitter of the IGBT chip III is connected with the collector of the IGBT chip VI; the brake unit comprises a diode chip VII, an IGBT chip VII, a clip copper sheet, a clip emitter copper sheet and a clip control electrode copper sheet, wherein the cathode of the diode chip VII and the collector of the IGBT chip VII are respectively connected with a copper-clad ceramic substrate; one end of a clip copper sheet is fixedly connected with the copper-clad ceramic substrate, and the other end of the clip copper sheet is fixedly connected with the anode of the diode chip VII, so that the anode of the diode chip VII is fixedly connected with the collector of the IGBT chip VII; one ends of a clip emitter copper sheet and a clip control electrode copper sheet are fixedly connected with the copper-clad ceramic substrate, the other end of the clip emitter copper sheet is connected with the emitter of the IGBT chip VII, and the other end of the clip control electrode copper sheet is fixedly connected with the control electrode of the IGBT chip VII; and two ends of the temperature control detection NTC device are respectively connected to the copper plate units.
Preferably, the copper-clad ceramic substrate comprises a substrate body and a copper plate unit used for connecting the three-phase rectifying unit, the three-phase inverting unit, the braking unit and the temperature control detection NTC device, and the copper plate unit is attached to and fixed on the substrate body.
Preferably, all the diode chips and the IGBT chips are fixed on the copper plate unit through solder paste; all clip copper sheets, all clip emitter copper sheets and all clip control electrode copper sheets are fixedly connected with the copper sheet units through solder paste, all clip copper sheets are fixedly connected with the diode chips through solder paste, and all clip emitter copper sheets and all clip control electrode copper sheets are fixedly connected with the IGBT chips through solder paste.
Preferably, the poles include a P pole connected with the cathodes of the diode chip I, the diode chip II and the diode chip III, an L1 pole, an L2 pole and an L3 pole connected with the cathodes of the diode chip IV, the diode chip V and the diode chip VI, an N pole connected with the anodes of the diode chip IV, the diode chip V and the diode chip VI, a G1 pole, a G2 pole, a G3 pole, a G5 pole, a G6 pole and a GB pole connected with the control electrodes of the IGBT chip I, the IGBT chip II, the IGBT chip III, the IGBT chip IV, the IGBT chip V, the IGBT chip VI and the IGBT chip VII, a U pole, a V pole, a W pole, an EW pole, an EV pole, an EU pole and an NB connected with the emitters of the IGBT chip I, the IGBT chip II, the IGBT chip VII, the IGBT chip III, the IGBT chip IV, the chip VI and the IGBT chip VII, a U pole, a V pole, a W pole, an EV pole, an EU pole and an NB connected with the cathodes of the diode chip I, the diode chip II, the diode chip V, the diode chip III, the diode chip VI, the diode chip III, the diode chip IV and the diode chip VI, a cathode of the diode chip III are connected with the diode chip IV, a N pole, a pole connected with the IGBT chip III, a control electrode, a control electrode control, The IGBT chip I comprises a P1 pole connected with a collector of the IGBT chip I, a P1 pole connected with a collector of the IGBT chip II and a collector of the IGBT chip III, a B pole connected with a collector of the IGBT chip VII, and a T1 pole and a T2 pole respectively connected with two ends of the temperature control detection NTC device.
Preferably, the IGBT chip I, the IGBT chip II, the IGBT chip III, the IGBT chip IV, the IGBT chip V and the IGBT chip VI are all composed of IGBT bodies and freewheeling diodes.
Based on the PIM device, the technical scheme provides a method for manufacturing the PIM device, which comprises the following steps:
s1, processing the copper-clad ceramic substrate according to PIM circuit layout requirements, and determining the layout positions of all components according to a PIM circuit layout structure;
s2, placing the copper-clad ceramic substrate in a special positioning tool for fixing, editing a substrate dispensing program according to the determined component arrangement position, and dispensing solder paste at the component arrangement position on the copper-clad ceramic substrate by using an automatic dispenser according to the substrate dispensing program;
s3, adopting vacuum automatic grabbing equipment to grab, move and place all components including the IGBT chip and the diode chip on the solder paste at the corresponding component arrangement position in sequence, and simultaneously adopting CCD to check the position certainty of each component;
s4, determining the connecting position of the copper-clad ceramic substrate and a copper sheet on the component according to the arrangement position of the component, editing a chip dispensing program according to the connecting position of the copper sheet, and dispensing solder paste at the connecting position of the copper sheet by using an automatic dispenser according to the chip dispensing program; the copper sheets comprise clip copper sheets, clip control electrode copper sheets, emitter copper sheets and clips;
s5, adopting vacuum automatic grabbing equipment to grab, move and place all copper sheets including a clip copper sheet, a clip emitter copper sheet and a clip control electrode copper sheet at corresponding copper sheet connecting positions in sequence, and simultaneously adopting a CCD to check the position certainty of each copper sheet;
s6, determining the positions of all poles of the PIM circuit on the copper-clad ceramic substrate, adopting vacuum automatic grabbing equipment to grab, move and arrange the pins at the positions corresponding to all the poles, and then fixing the pins through a positioning jig to obtain a hardware semi-finished product;
s7, placing the hardware semi-finished product in a vacuum sintering furnace, adjusting working parameters of the vacuum sintering furnace, melting the solder paste at high temperature by using the vacuum sintering furnace to fix the alloy among corresponding materials, and then removing the positioning jig to obtain a one-time sintered molded product;
s8, manually welding the temperature control detection NTC device on a copper-clad ceramic substrate of a one-time sintering molding product by using a solder wire, namely finishing the hardware structure processing of the PIM circuit;
s9, brushing solder paste on the copper base plate by using a solder paste brushing machine, placing the hardware structure of the PIM circuit at the position of the copper base plate where the solder paste is brushed, then placing the copper base plate and the hardware structure of the PIM circuit in a vacuum sintering furnace, adjusting working parameters of the vacuum sintering furnace, and performing secondary sintering in the vacuum sintering furnace to obtain a secondary sintering molding product;
s10, placing the secondary sintering molded product in ultrasonic equipment, setting working parameters of the ultrasonic equipment, and removing residual tin beads and rosin on the surface of the secondary sintering molded product by using the ultrasonic equipment and a chemical reagent;
s11, mounting the cleaned secondary sintering molded product on a plastic shell, pouring silica gel by using a vacuum pouring machine, and placing the poured silica gel into a vacuum curing box for curing to obtain a product to be delivered out of the factory;
and S12, testing the product to be delivered by adopting automatic equipment at normal temperature and high temperature, testing the static parameters and the dynamic parameters of the diode chip and the IGBT chip in the product to be delivered by adopting a digital machine, and combining the test results to obtain a qualified product.
Preferably, in the step S2 and the step S4, before the automatic dispenser works, the method further includes selecting a dispensing needle with a corresponding diameter according to the size of the required amount of the solder paste and adjusting working parameters of the automatic dispenser, where the working parameters include dispensing air pressure, dispensing time and height of the dispensing needle.
Preferably, in step S7, the void ratio of the solder paste on the primary sintered molded product is less than 1%.
Preferably, in the steps S7 and S9, the operating parameters of the vacuum sintering furnace include sintering temperature, sintering time and vacuum degree.
Preferably, in the step S7, the sintering temperature of the vacuum sintering furnace is not lower than 295 ℃; in the step S9, the solder paste on the copper base plate is medium-temperature solder paste with a melting point not higher than 220 ℃, and the sintering temperature of the vacuum sintering furnace is not higher than 260 ℃.
The beneficial effect that this technical scheme brought:
1) the copper-clad ceramic substrate is an electronic base material which is prepared by directly sintering copper foil on the surface of ceramic by using a DCB technology, has the characteristics of excellent thermal cyclicity, stable shape, good rigidity, high thermal conductivity and high reliability, can etch various patterns on the copper-clad surface, is a pollution-free and nuisanceless green product, has quite wide use temperature, and can reach the temperature of-55-850 ℃ and the thermal expansion coefficient close to that of silicon.
2) This technical scheme integrates a three-phase rectification current circuit (three-phase rectifier cell), a three-phase inverter circuit (three-phase inverter cell), the braking circuit (braking cell) that single IGBT braking used on a motor and a protection device do not want the temperature control switch (temperature control detection NTC device) of high temperature inefficacy, for the single tube among the prior art (originally these circuits and switch are the single tube that independently exists), the PIM device structure of this technical scheme is small and exquisite, high durability and convenient use, apply to this PIM device among the relevant circuit, can simplify circuit structure, clip technology based on PIM device adoption, PIM device stable performance, further make the circuit safety and reliability who uses this PIM device.
3) According to the technical scheme, the copper plate unit is divided into the plurality of plates according to the circuit structure requirements of each unit, so that the circuit hardware distribution of the PIM device is more reasonable, the connection points of all parts are more clear, the production flow is convenient to unify, and the production error rate is reduced.
4) According to the technical scheme, the solder paste is adopted for hardware structure connection of the circuit inside the PIM device, materials are easy to obtain, the price is low, under the condition that the hardware structure is stable, the hardware structure connection operation is simple as far as possible, and a good foundation is further laid for batch production of the PIM device.
5) According to the technical scheme, the IGBT chip connected with the freewheeling diode in parallel is adopted in the three-phase inversion unit, the IGBT chip cannot be broken down due to high voltage generated by sudden turn-off, so that the three-phase inversion unit has a protection effect when the circuit has voltage or current mutation, and the safety performance of the PIM device is further improved.
6) According to the technical scheme, the clip process is adopted to replace a traditional aluminum wire process, wherein the cross sectional areas of the clip emitter copper sheet, the clip control electrode copper sheet and the clip copper sheet are far larger than the cross sectional area of an aluminum wire, the working temperature of the PIM device produced by the clip process is 5-10 ℃ lower than that of the PIM device produced by the aluminum wire process under the same working condition, and the copper-clad ceramic substrate has high heat conductivity, so that the heat dissipation efficiency of the product is further improved, the thermal fatigue life of the PIM device is prolonged.
7) The manufacturing process of the PIM device is streamlined, most processes can be automatically completed by mechanical equipment, the manual participation amount is small, the automation degree of the manufacturing process of the PIM device is improved, the surface of a hardware structure of the PIM circuit is ensured to be free of oxidation by adopting a solder paste matched with a vacuum sintering process, the production process difficulty of the PIM device is reduced, the production efficiency is improved, and meanwhile, the qualification rate of products is increased.
8) According to the technical scheme, the automatic dispensing machine is adopted to dispense the solder paste, so that the using amount of the solder paste can be well controlled, and the uniformity of the dispensed solder paste is ensured.
9) According to the technical scheme, through setting the working parameters of the vacuum sintering furnace, the voidage of the solder paste in the PIM circuit is lower than 1%, the connection stability of the hardware structure of the PIM circuit is ensured, meanwhile, the resistance value in the PIM circuit inside the PIM device is reduced, the current density in the PIM circuit inside the PIM device is improved when the PIM device is used, the power consumption of the PIM device is further reduced, the electrifying capacity of the PIM device is improved, and in sum, the technical scheme reduces the occurrence rate of welding areas (solder paste areas), improves the safety performance of the PIM device, and further reduces the fault occurrence rate of circuits.
Drawings
FIG. 1 is a schematic view of the overall structure of the present embodiment;
FIG. 2 is a schematic diagram of the overall structure of the present embodiment with marked poles;
FIG. 3 is a schematic structural view of a copper-clad ceramic substrate;
fig. 4 is a schematic circuit structure diagram of the PIM device according to the present embodiment;
in the figure:
1. a temperature control detection NTC device; 2. a substrate body; 3. a diode chip I; 4. a diode chip II; 5. a diode chip III; 6. a diode chip IV; 7. a diode chip V; 8. a diode chip VI; 9. clip copper sheets; 10. an IGBT chip I; 11. an IGBT chip II; 12. an IGBT chip III; 13. an IGBT chip IV; 14. an IGBT chip V; 15. an IGBT chip VI; 16. clip emitter copper sheets; 17. a clip control electrode copper sheet; 18. a diode chip VII; 19. an IGBT chip VII; 20. a copper plate I; 21. a copper plate II; 22. a copper plate III; 23. a copper plate IV; 24. a copper plate V; 25. a copper plate VI; 26. a copper plate VII; 27. a copper plate VIII; 28. a copper plate IX; 29. a copper plate X; 30. a P pole; 31. pole L1; 32. pole L2; 33. pole L3; 34. an N pole; 35. the pole of G1; 36. the pole of G2; 37. the pole of G3; 38. the pole of G4; 39. the pole of G5; 40. the pole of G6; 41. the GB pole; 42. a U pole; 43. pole V; 44. a W pole; 45. an EU pole; 46. EV pole; 47. an EW pole; 48. an NB pole; 49. the P1 pole; 50. a pole B; 51. the pole of T1; 52. the pole of T2.
Detailed Description
The invention is further described in the following with reference to the drawings and examples, but it should not be understood that the invention is limited to the examples below, and variations and modifications in the field of the invention are intended to be included within the scope of the appended claims without departing from the spirit of the invention.
Example 1
The embodiment discloses a PIM device, which is a basic implementation scheme of the technical scheme and includes a copper-clad ceramic substrate, a three-phase rectifying unit, a three-phase inverting unit, a braking unit and a temperature control detection NTC device 1.
The three-phase rectifying unit comprises six diode chips arranged on the copper-clad ceramic substrate and clip copper sheets 9 which correspond to the six diode chips one by one, wherein the six diode chips are a diode chip I3, a diode chip II 4, a diode chip III 5, a diode chip IV 6, a diode chip V7 and a diode chip VI 8 respectively; the six cathodes are connected to the copper-clad ceramic substrate, and the cathodes of the diode chip I3, the diode chip II 4 and the diode chip III 5 are connected through the copper-clad ceramic substrate; one ends of six clip copper sheets 9 are fixedly connected with anodes of six diode chips respectively, the other ends of the six clip copper sheets 9 are fixedly connected with the copper-clad ceramic substrate respectively, so that the anode of the diode chip I3 is connected with the cathode of the diode chip IV 6, the anode of the diode chip II 4 is connected with the cathode of the diode chip V7, the anode of the diode chip III 5 is connected with the cathode of the diode chip VI 8, and the anodes of the diode chip IV 6, the anode of the diode chip V7 and the anode of the diode chip VI 8 are connected together.
The three-phase inversion unit comprises six IGBT chips, six clip emitter copper sheets 16 corresponding to the six IGBT chips one by one and six clip control electrode copper sheets 17 corresponding to the six IGBT chips one by one, wherein the six IGBT chips are an IGBT chip I10, an IGBT chip II 11, an IGBT chip III 12, an IGBT chip IV 13, an IGBT chip V14 and an IGBT chip VI 15 respectively; the collecting electrodes of the six IGBT chips are connected to the copper-clad ceramic substrate, and the collecting electrodes of the IGBT chip I10, the IGBT chip II 11 and the IGBT chip III 12 are connected through the copper-clad ceramic substrate; one end of each of six clip emitter copper sheets 16 is fixedly connected with the emitter of each of six IGBT chips, the other end of each of the six clip emitter copper sheets 16 is fixedly connected with a copper-clad ceramic substrate, one end of each of six clip control electrode copper sheets 17 is fixedly connected with the control electrodes of the six IGBT chips, the other end of each of the six clip control electrode copper sheets 17 is fixedly connected with the copper-clad ceramic substrate, the emitter of the IGBT chip I10 is connected with the collector of the IGBT chip IV 13, the emitter of the IGBT chip II 11 is connected with the collector of the IGBT chip V14, and the emitter of the IGBT chip III 12 is connected with the collector of the IGBT chip VI 15.
The brake unit comprises a diode chip VII 18, an IGBT chip VII 19, a clip copper sheet 9, a clip emitter copper sheet 16 and a clip control electrode copper sheet 17, wherein the cathode of the diode chip VII 18 and the collector of the IGBT chip VII 19 are respectively connected with a copper-clad ceramic substrate, and the cathode of the diode chip VII 18 is connected with the collectors of the IGBT chip I10, the IGBT chip II 11 and the IGBT chip III 12 through the copper-clad ceramic substrate; one end of a clip copper sheet 9 is fixedly connected with the copper-clad ceramic substrate, and the other end of the clip copper sheet 9 is fixedly connected with the anode of the diode chip VII 18, so that the anode of the diode chip VII 18 is fixedly connected with the collector of the IGBT chip VII 19; one ends of a clip emitter copper sheet 16 and a clip control electrode copper sheet 17 are fixedly connected with the copper-clad ceramic substrate, the other end of the clip emitter copper sheet 16 is connected with an emitter of the IGBT chip VII 19, and the other end of the clip control electrode copper sheet 17 is fixedly connected with a control electrode of the IGBT chip VII 19; two ends of the temperature control detection NTC device 1 are respectively connected to the copper plate units.
The Copper-clad ceramic substrate is an electronic base material which is prepared by directly sintering Copper foil on the surface of ceramic by using DCB (direct Copper bond) technology, has the characteristics of excellent thermal cyclicity, stable shape, good rigidity, high thermal conductivity and high reliability, can etch various patterns on the Copper-clad surface, is a pollution-free and pollution-free green product, has quite wide use temperature, and can be used for producing the product with the thermal expansion coefficient close to silicon from-55 ℃ to 850 ℃. Compared with the aluminum wire process in the prior art, the PIM device produced by adopting the clip process is adopted in the technical scheme, wherein the cross sectional areas of the clip emitter copper sheet 16, the clip control electrode copper sheet 17 and the clip copper sheet 9 are far larger than the cross sectional area of the aluminum wire, and under the same working condition, the working temperature of the PIM device produced by adopting the clip process is 5-10 ℃ lower than that of the PIM device produced by adopting the aluminum wire process, and the heat dissipation efficiency of the product is further improved due to the high heat conductivity of the copper-clad ceramic substrate. In addition, according to the technical scheme, a three-phase rectification current circuit (a three-phase rectification unit), a three-phase inverter circuit (a three-phase inversion unit), a braking circuit (a braking unit) for single IGBT braking on a motor and a temperature control switch (a temperature control detection NTC device 1) for protecting a device from high-temperature failure are integrated, and compared with a single tube (originally, the circuits and the switches are independent single tubes) in the prior art, the PIM device is small in structure and convenient to use, the PIM device is applied to related circuits, the circuit structure can be simplified, based on a clip process adopted by the PIM device, the PIM device is stable in performance, and further the circuit using the PIM device is safe and reliable.
Example 2
The embodiment discloses a PIM device, which is a preferred embodiment of the present technical solution, that is, in embodiment 1, the copper-clad ceramic substrate includes a substrate body 2 and a copper plate unit for connecting the three-phase rectifying unit, the three-phase inverting unit, the braking unit and the temperature control detection NTC device 1, and the copper plate unit is attached to and fixed on the substrate body 2. The copper plate unit comprises a rectifying part and a braking inverter part, wherein the rectifying part comprises a copper plate I20, a copper plate II 21 for arranging a diode chip I3, a diode chip II 4 and a diode chip III 5, and a copper plate III 22 for arranging a diode chip IV 6, a diode chip V7 and a diode chip VI 8; the diode comprises a clip copper sheet 9 on the anode of a diode chip IV 6, a diode chip V7 and a diode chip VI 8, the cathodes of the diode chip I3, the diode chip II 4 and the diode chip III 5 are connected through a copper plate III 22, the clip copper sheets 9 on the diode chip I3, the diode chip II 4 and the diode chip III 5 are respectively connected with the cathodes of the diode chip IV 6, the diode chip V7 and the diode chip VI 8 through a copper plate II 21, and the clip copper sheets 9 on the diode chip IV 6, the diode chip V7 and the diode chip VI 8 are connected on a copper plate I20. The braking inversion part comprises seven copper plates IV 23 which correspond to the clip control electrode copper sheets 17 one by one, three copper plates V24 which correspond to the IGBT chip IV 13, the IGBT chip V14 and the clip emitter copper sheets 16 on the IGBT chip VI 15 one by one, one copper plate VI 25 which is used for laying the diode chip VII 18, the IGBT chip I10, the IGBT chip II 11 and the IGBT chip III 12, one copper plate VII 26 which is used for laying the IGBT chip IV 13, the IGBT chip V14 and the IGBT chip VI 15, one copper plate VIII 27 which is used for laying the IGBT chip VII 19, one copper plate IX 28 which is used for connecting the clip emitter copper sheets 16 on the IGBT chip VII 19, and one copper plate X29 which is used for connecting the temperature control detection NTC device 1; the cathode of the diode chip VII 18, the collector of the IGBT chip I10, the collector of the IGBT chip II 11 and the collector of the IGBT chip III 12 are connected through a copper plate VI 25, the clip copper sheet 9 of the anode of the diode chip VII 18 is connected through the collector of the IGBT chip VII 19 of the copper plate VIII 27, and the clip emitter copper sheets 16 on the IGBT chip I10, the IGBT chip II 11 and the IGBT chip III 12 are respectively connected with the collectors of the IGBT chip IV 13, the IGBT chip V14 and the IGBT chip VI 15 through the copper plate VII 26. According to the technical scheme, the copper plate unit is divided into the plurality of plates according to the circuit structure requirements of each unit, so that the circuit hardware distribution of the PIM device is more reasonable, the connection points of all parts are more clear, the production flow is convenient to unify, and the production error rate is reduced.
Example 3
The embodiment discloses a PIM device, which is a preferred embodiment of the present technical solution, that is, in embodiment 1, an IGBT chip i 10, an IGBT chip ii 11, an IGBT chip iii 12, an IGBT chip iv 13, an IGBT chip v 14, and an IGBT chip vi 15 are all composed of an IGBT body and a freewheeling diode. According to the technical scheme, the IGBT chip connected with the freewheeling diode in parallel is adopted in the three-phase inversion unit, the IGBT chip cannot be broken down due to high voltage generated by sudden turn-off, so that the three-phase inversion unit has a protection effect when the circuit has voltage or current mutation, and the safety performance of the PIM device is further improved.
Furthermore, all the diode chips and the IGBT chips are fixed on the copper plate unit through solder paste; all clip copper sheets 9, clip emitter copper sheets 16 and clip control electrode copper sheets 17 are fixedly connected with the copper sheet units through solder paste, all clip copper sheets 9 are fixedly connected with the diode chip through solder paste, and all clip emitter copper sheets 16 and clip control electrode copper sheets 17 are fixedly connected with the IGBT chip through solder paste. According to the technical scheme, the solder paste is adopted for hardware structure connection of the circuit inside the PIM device, materials are easy to obtain, the price is low, under the condition that the hardware structure is stable, the hardware structure connection operation is simple as far as possible, and a good foundation is further laid for batch production of the PIM device.
Example 4
This example discloses a PIM device, which is a preferred embodiment of this embodiment, that is, in example 1, the poles include a P pole 30 connected to the cathodes of diode chips i 3, ii 4 and iii 5, a L1 pole 31, a L2 pole and a L3 pole 33 connected to the cathodes of diode chips iv 6, v 7 and vi 8, respectively, a N pole 34 connected to the anodes of diode chips iv 6, v 7 and vi 8, a G1 pole 35, a G2 pole 36, a G3 pole 37, a G5 pole 39, a G6 pole 40 and a GB pole 41 connected to the gates of IGBT chips i 10, ii 11, iii 12, iv 13, v 14 and vi 15 and vii 19, respectively, and a G1 pole 35, a G2 pole 36, a G3 pole 37, a G5 pole 39, a G6 pole 40 and a GB pole 41 connected to IGBT chips i 10, ii 11, iii 12, iii and vi 19, respectively, The IGBT chip IV 13, the IGBT chip V14, the IGBT chip VI 15, a U pole 42, a V pole 43, a W pole 44, an EW pole 47, an EV pole 46, an EU pole 45 and an NB pole 48 which are connected with an emitter of the IGBT chip VII 19, a P1 pole 49 which is connected with a negative pole of the diode chip VII 18, a collector of the IGBT chip I10, a collector of the IGBT chip II 11 and a collector of the IGBT chip III 12, a B pole 50 which is connected with a collector of the IGBT chip VII 19, and a T NTC 1 pole 51 and a T2 pole 52 which are respectively connected with two ends of the temperature control detection device 1.
The pins are convenient to set based on the set poles, and the pins can be distributed based on the poles, so that the PIM device is convenient to use.
Example 5
The embodiment discloses a method for manufacturing a PIM device, which is a basic implementation scheme of the present invention and includes the following steps:
s1, processing the copper-clad ceramic substrate according to PIM circuit layout requirements, and determining the layout positions of all components according to a PIM circuit layout structure; the method comprises the steps that a hardware structure of a PIM circuit is determined according to installation requirements provided by a supplier, the PIM circuit is subjected to layout including position determination of components and the circuit trend according to the hardware structure, and a copper plate unit with a plurality of plates is mainly arranged at a dividing position for processing a copper-clad ceramic substrate;
s2, placing the copper-clad ceramic substrate in a special positioning tool for fixing, editing a substrate dispensing program according to the determined component arrangement position, and dispensing solder paste at the component arrangement position on the copper-clad ceramic substrate by using an automatic dispenser according to the substrate dispensing program; the method specifically comprises the following steps:
s2-1, planning and determining the layout position of the components according to the hardware structure of the PIM circuit and the structure of the copper-clad ceramic substrate, and editing a substrate dispensing program according to the copper-clad ceramic substrate structure and the determined layout position of the components;
s2-2, dispensing tin paste at the arrangement positions of the IGBT chips, the arrangement positions of the diode chips and the like on the copper-clad ceramic substrate by using an automatic dispensing machine until dispensing is completed at all positions where components need to be arranged, and controlling the automatic dispensing machine to automatically stop running by using a substrate dispensing program;
s3, adopting vacuum automatic grabbing equipment to grab, move and place all components including the IGBT chip and the diode chip on the solder paste at the corresponding component arrangement position in sequence, simultaneously adopting CCD to check the position certainty of each component, ensuring the assembly precision, and ensuring that the IGBT chip and the diode chip cannot move again in the post-process movement because the solder paste has certain viscosity;
s4, determining the connecting position of the copper-clad ceramic substrate and a copper sheet on the component according to the arrangement position of the component, editing a chip dispensing program according to the connecting position of the copper sheet, and dispensing solder paste at the connecting position of the copper sheet by using an automatic dispenser according to the chip dispensing program; the copper sheets comprise clip copper sheets 9, clip control electrode copper sheets 17, emitter copper sheets and clips; further, after dispensing is finished at all positions needing copper sheets, the chip dispensing program is used for controlling the automatic dispenser to automatically stop running;
s5, adopting vacuum automatic grabbing equipment to grab, move and place all copper sheets including the clip copper sheet 9, the clip emitter copper sheet 16 and the clip control electrode copper sheet 17 at the corresponding copper sheet connecting positions in sequence, simultaneously adopting CCD to check the position certainty of each copper sheet, ensuring the assembly precision, and ensuring that the copper sheets cannot move again in the movement of the post process because the solder paste has certain viscosity;
s6, determining the positions of all poles of the PIM circuit on the copper-clad ceramic substrate, adopting vacuum automatic grabbing equipment to grab, move and arrange the pins at the positions corresponding to all the poles, and then fixing the pins through a positioning jig to obtain a hardware semi-finished product;
s7, placing the hardware semi-finished product in a vacuum sintering furnace, adjusting working parameters of the vacuum sintering furnace, melting the solder paste at high temperature by using the vacuum sintering furnace to fix the alloy among corresponding materials, and then removing the positioning jig to obtain a one-time sintered molded product;
s8, manually welding the temperature control detection NTC device 1 on a copper-clad ceramic substrate of a one-time sintering molding product by using a solder wire, namely finishing the hardware structure processing of the PIM circuit;
s9, brushing solder paste on the copper bottom plate by using a solder paste brushing machine, placing the hardware structure of the PIM circuit at the position where the solder paste is brushed on the copper bottom plate, then placing the copper bottom plate and the hardware structure of the PIM circuit in a vacuum sintering furnace, adjusting working parameters of the vacuum sintering furnace, and performing secondary sintering in the vacuum sintering furnace to obtain a secondary sintering molding product;
s10, placing the secondary sintering molded product in ultrasonic equipment, setting working parameters of the ultrasonic equipment, and removing residual tin beads and rosin on the surface of the secondary sintering molded product by using the ultrasonic equipment and a chemical reagent;
s11, mounting the cleaned secondary sintering molded product on a plastic shell, pouring silica gel by using a vacuum pouring machine, and placing the poured silica gel into a vacuum curing box for curing to obtain a product to be delivered out of the factory; wherein, the vacuum pouring machine and the vacuum curing box ensure the full exhaust of the silicon gel during the curing reaction mainly by adjusting the vacuum value;
and S12, testing the product to be delivered by adopting automatic equipment at normal temperature and high temperature, testing the static parameters and the dynamic parameters of the diode chip and the IGBT chip in the product to be delivered by adopting a digital machine, and combining the test results to obtain a qualified product so as to ensure the delivery quality of the product. And finally, packaging the qualified products and warehousing.
According to the technical scheme, the clip process is adopted to replace a traditional aluminum wire process, wherein the cross sectional areas of the clip emitter copper sheet 16, the clip control electrode copper sheet 17 and the clip copper sheet 9 are far larger than the cross sectional area of an aluminum wire, the working temperature of the PIM device produced by the clip process is 5-10 ℃ lower than that of the PIM device produced by the aluminum wire process under the same working condition, and the copper-clad ceramic substrate has high heat conductivity, so that the heat dissipation efficiency of the product is further improved, and the thermal fatigue life of the PIM device is prolonged.
The manufacturing process of the PIM device is streamlined, most processes can be automatically completed by mechanical equipment, the manual participation amount is small, the automation degree of the manufacturing process of the PIM device is improved, the surface of a hardware structure of the PIM circuit is ensured to be free of oxidation by adopting a solder paste matched with a vacuum sintering process, the production process difficulty of the PIM device is reduced, the production efficiency is improved, and meanwhile, the qualification rate of products is increased.
Example 6
This example discloses a method for manufacturing a PIM device, which is a preferred embodiment of this technical solution, that is, in step S2 and step S4 of example 5, before the automatic dispenser operates, the method further includes selecting a dispensing needle with a corresponding diameter according to the size of the required amount of the solder paste, and adjusting operating parameters of the automatic dispenser, where the operating parameters include dispensing air pressure, dispensing time, and the height of the dispensing needle.
The solder paste amount is too much, so that the waste of materials can be caused, the quality of a PIM device can be influenced, the solder paste amount is too little, and the quality of the PIM device can be influenced, so that the solder paste amount needs to be strictly controlled.
Example 7
As a preferred embodiment of the present invention, in step S7 of example 5, the voidage of the solder paste on the primary sintered molded product is less than 1%, specifically, the voidage of the solder paste in the PIM circuit is less than 1%. Wherein, if the void ratio of tin cream is too big, can increase the resistance value in the PIM circuit to influence the current density during operation, further lead to the consumption height and the circular telegram power poor, consequently, inject the void ratio of tin cream in the PIM circuit and be less than 1%, in order to ensure PIM circuit hardware structure connection's stability, reduce the resistance value in the inside PIM circuit of PIM device simultaneously, improve the current density in its inside PIM circuit of PIM device when using, further reduce the power consumption of PIM device, the circular telegram ability of PIM device has been improved, to sum up, this technical scheme has reduced the incident volume of welding area (tin cream region), has improved the security performance of PIM device, further can reduce the fault incidence of circuit.
Further, to make the void ratio of the solder paste in the PIM circuit lower than 1%, it is critical to set the operating parameters of the vacuum sintering furnace, that is, in step S7, by setting the operating parameters of the vacuum sintering furnace including the sintering temperature, the sintering time, and the vacuum degree, the void ratio of the solder paste on the once-sintered molded product is lower than 1%, the specific values of the operating parameters are related to the selected solder paste material, and the operating parameters of the vacuum sintering furnace may be different for different solder paste materials. Accordingly, in step S9, the operating parameters of the vacuum sintering furnace include sintering temperature, sintering time and vacuum degree. Furthermore, in step S7, the sintering temperature of the vacuum sintering furnace is not lower than 295 ℃, in step S9, the solder paste on the copper base plate is medium-temperature solder paste with the melting point not higher than 220 ℃, and the sintering temperature of the vacuum sintering furnace is not higher than 260 ℃, so that the secondary sintering process does not damage the solder paste structure in the primary sintered product.

Claims (10)

1. A PIM device, comprising: the device comprises a copper-clad ceramic substrate, a three-phase rectifying unit, a three-phase inverting unit, a braking unit and a temperature control detection NTC device (1);
the three-phase rectifying unit comprises six diode chips arranged on a copper-clad ceramic substrate and clip copper sheets (9) corresponding to the six diode chips one by one, wherein the six diode chips are a diode chip I (3), a diode chip II (4), a diode chip III (5), a diode chip IV (6), a diode chip V (7) and a diode chip VI (8); the six cathodes are connected to the copper-clad ceramic substrate, and the cathodes of the diode chip I (3), the diode chip II (4) and the diode chip III (5) are connected through the copper-clad ceramic substrate; one ends of six clip copper sheets (9) are respectively fixedly connected with anodes of six diode chips, the other ends of the six clip copper sheets (9) are respectively fixedly connected with a copper-coated ceramic substrate, so that the anode of a diode chip I (3) is connected with the cathode of a diode chip IV (6), the anode of a diode chip II (4) is connected with the cathode of a diode chip V (7), the anode of a diode chip III (5) is connected with the cathode of a diode chip VI (8), and the anode of the diode chip IV (6), the anode of the diode chip V (7) and the anode of the diode chip VI (8) are connected together;
the three-phase inversion unit comprises six IGBT chips, six clip emitter copper sheets (16) corresponding to the six IGBT chips one by one and six clip control electrode copper sheets (17) corresponding to the six IGBT chips one by one, wherein the six IGBT chips are an IGBT chip I (10), an IGBT chip II (11), an IGBT chip III (12), an IGBT chip IV (13), an IGBT chip V (14) and an IGBT chip VI (15) respectively; the collecting electrodes of the six IGBT chips are connected to the copper-clad ceramic substrate, and the collecting electrodes of the IGBT chip I (10), the IGBT chip II (11) and the IGBT chip III (12) are connected through the copper-clad ceramic substrate; one end of each of six clip emitter copper sheets (16) is fixedly connected with the emitter of each of six IGBT chips, the other end of each of the six clip emitter copper sheets (16) is fixedly connected with a copper-clad ceramic substrate, one end of each of six clip control electrode copper sheets (17) is fixedly connected with the control electrodes of each of the six IGBT chips, the other end of each of the six clip control electrode copper sheets (17) is fixedly connected with the copper-clad ceramic substrate, so that the emitter of the IGBT chip I (10) is connected with the collector of the IGBT chip IV (13), the emitter of the IGBT chip II (11) is connected with the collector of the IGBT chip V (14), and the emitter of the IGBT chip III (12) is connected with the collector of the IGBT chip VI (15);
the brake unit comprises a diode chip VII (18), an IGBT chip VII (19), a clip copper sheet (9), a clip emitter copper sheet (16) and a clip control electrode copper sheet (17), the cathode of the diode chip VII (18) and the collector of the IGBT chip VII (19) are respectively connected to a copper-clad ceramic substrate, and the cathode of the diode chip VII (18) is connected with the collectors of the IGBT chip I (10), the IGBT chip II (11) and the IGBT chip III (12) through the copper-clad ceramic substrate; one end of a clip copper sheet (9) is fixedly connected with the copper-clad ceramic substrate, and the other end of the clip copper sheet (9) is fixedly connected with the anode of the diode chip VII (18), so that the anode of the diode chip VII (18) is fixedly connected with the collector of the IGBT chip VII (19); one ends of a clip emitter copper sheet (16) and a clip control electrode copper sheet (17) are fixedly connected with the copper-clad ceramic substrate, the other end of the clip emitter copper sheet (16) is connected with an emitter of the IGBT chip VII (19), and the other end of the clip control electrode copper sheet (17) is fixedly connected with a control electrode of the IGBT chip VII (19);
and two ends of the temperature control detection NTC device (1) are respectively connected to the copper plate units.
2. The PIM device of claim 1, wherein: the copper-clad ceramic substrate comprises a substrate body (2) and a copper plate unit which is used for connecting the three-phase rectifying unit, the three-phase inverting unit, the braking unit and the temperature control detection NTC device (1), and the copper plate unit is attached to and fixed on the substrate body (2).
3. The PIM device of claim 2, wherein: all the diode chips and the IGBT chips are fixed on the copper plate unit through solder paste; all clip copper sheets (9), all clip emitter copper sheets (16) and all clip control electrode copper sheets (17) are fixedly connected with the copper sheet units through solder paste, all clip copper sheets (9) are fixedly connected with the diode chips through solder paste, and all clip emitter copper sheets (16) and all clip control electrode copper sheets (17) are fixedly connected with the IGBT chips through solder paste.
4. The PIM device of claim 2, wherein: poles are distributed on the copper plate units; the poles comprise a P pole (30) which is simultaneously connected with the cathodes of the diode chip I (3), the diode chip II (4) and the diode chip III (5), an L1 pole (31), an L2 pole (32) and an L3 pole (33) which are respectively connected with the cathodes of the diode chip IV (6), the diode chip V (7) and the diode chip VI (8), an N pole (34) which is simultaneously connected with the anodes of the diode chip IV (6), the diode chip V (7) and the diode chip VI (8), a G1 pole (35), a G2 pole (36), a G3 pole (37), a G4 pole (38), a G5 pole (39), a G6 pole (40) and a GB pole (41) which are respectively connected with the IGBT chip I (10), the IGBT chip II (11), the IGBT chip III (12), the IGBT chip IV (13), the IGBT chip V (14), the IGBT chip VI (15) and the control pole of the IGBT chip VII (19), respectively with IGBT chip I (10), IGBT chip II (11), IGBT chip III (12), IGBT chip IV (13), IGBT chip V (14), U pole (42) that IGBT chip VI (15) and IGBT chip VII (19) emitter are connected, V pole (43), W pole (44), EW pole (47), EV pole (46), EU pole (45) and NB pole (48), simultaneously with the negative pole of diode chip VII (18), the collector of IGBT chip I (10), P1 pole (49) that the collector of IGBT chip II (11) and the collector of IGBT chip III (12) are connected, B pole (50) that are connected with IGBT chip VII (19) collector to and T1 pole (51) and T2 pole (52) that are connected with control by temperature change detection device NTC (1) both ends respectively.
5. The PIM device of claim 1, wherein: the IGBT chip I (10), the IGBT chip II (11), the IGBT chip III (12), the IGBT chip IV (13), the IGBT chip V (14) and the IGBT chip VI (15) are all composed of IGBT bodies and freewheeling diodes.
6. A method of manufacturing a PIM device, comprising the steps of:
s1, processing the copper-clad ceramic substrate according to PIM circuit layout requirements, and determining the layout positions of all components according to a PIM circuit layout structure;
s2, placing the copper-clad ceramic substrate in a special positioning tool for fixing, editing a substrate dispensing program according to the determined component arrangement position, and dispensing solder paste at the component arrangement position on the copper-clad ceramic substrate by using an automatic dispenser according to the substrate dispensing program;
s3, adopting vacuum automatic grabbing equipment to grab, move and place all components including the IGBT chip and the diode chip on the solder paste at the corresponding component arrangement position in sequence, and simultaneously adopting CCD to check the position certainty of each component;
s4, determining the connecting position of the copper-clad ceramic substrate and a copper sheet on the component according to the arrangement position of the component, editing a chip dispensing program according to the connecting position of the copper sheet, and dispensing solder paste at the connecting position of the copper sheet by using an automatic dispenser according to the chip dispensing program; the copper sheets comprise clip copper sheets (9), clip control electrode copper sheets (17), emitter copper sheets and clips;
s5, adopting vacuum automatic grabbing equipment to grab, move and place all copper sheets including a clip copper sheet (9), a clip emitter copper sheet (16) and a clip control electrode copper sheet (17) at corresponding copper sheet connecting positions in sequence, and simultaneously adopting a CCD to check the position certainty of each copper sheet;
s6, determining the positions of all poles of the PIM circuit on the copper-clad ceramic substrate, adopting vacuum automatic grabbing equipment to grab, move and arrange the pins at the positions corresponding to all the poles, and then fixing the pins through a positioning jig to obtain a hardware semi-finished product;
s7, placing the hardware semi-finished product in a vacuum sintering furnace, adjusting working parameters of the vacuum sintering furnace, melting the solder paste at high temperature by using the vacuum sintering furnace to fix the alloy among corresponding materials, and then removing the positioning jig to obtain a one-time sintered molded product;
s8, manually welding the temperature control detection NTC device (1) on a copper-clad ceramic substrate of a one-time sintering molding product by using a soldering tin wire, namely finishing the hardware structure processing of the PIM circuit;
s9, brushing solder paste on the copper base plate by using a solder paste brushing machine, placing the hardware structure of the PIM circuit at the position of the copper base plate where the solder paste is brushed, then placing the copper base plate and the hardware structure of the PIM circuit in a vacuum sintering furnace, adjusting working parameters of the vacuum sintering furnace, and performing secondary sintering in the vacuum sintering furnace to obtain a secondary sintering molding product;
s10, placing the secondary sintering molded product in ultrasonic equipment, setting working parameters of the ultrasonic equipment, and removing residual tin beads and rosin on the surface of the secondary sintering molded product by using the ultrasonic equipment and a chemical reagent;
s11, mounting the cleaned secondary sintering molded product on a plastic shell, pouring silica gel by using a vacuum pouring machine, and placing the poured silica gel into a vacuum curing box for curing to obtain a product to be delivered out of the factory;
and S12, testing the product to be delivered by adopting automatic equipment at normal temperature and high temperature, testing the static parameters and the dynamic parameters of the diode chip and the IGBT chip in the product to be delivered by adopting a digital machine, and combining the test results to obtain a qualified product.
7. The method of manufacturing a PIM device as set forth in claim 6, wherein: in the step S2 and the step S4, before the automatic dispenser works, the method further includes selecting a dispensing needle with a corresponding diameter according to the amount of the required solder paste and adjusting working parameters of the automatic dispenser, where the working parameters include dispensing air pressure, dispensing time and height of the dispensing needle.
8. The method of manufacturing a PIM device as set forth in claim 6, wherein: in step S7, the void ratio of the solder paste on the primary sintered molded product is less than 1%.
9. The method of manufacturing a PIM device as set forth in claim 6, wherein: in the steps S7 and S9, the operating parameters of the vacuum sintering furnace include sintering temperature, sintering time and vacuum degree.
10. The method of manufacturing a PIM device as set forth in claim 9, wherein: in the step S7, the sintering temperature of the vacuum sintering furnace is not lower than 295 ℃; in the step S9, the solder paste on the copper base plate is medium-temperature solder paste with a melting point not higher than 220 ℃, and the sintering temperature of the vacuum sintering furnace is not higher than 260 ℃.
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