CN113555509B - Display device and display panel - Google Patents
Display device and display panel Download PDFInfo
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- CN113555509B CN113555509B CN202110818579.2A CN202110818579A CN113555509B CN 113555509 B CN113555509 B CN 113555509B CN 202110818579 A CN202110818579 A CN 202110818579A CN 113555509 B CN113555509 B CN 113555509B
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
- H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
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Abstract
The present disclosure provides a display device and a display panel. The display panel includes: a first electrode; the light-emitting unit is arranged on the first electrode and comprises a plurality of light-emitting structures and a plurality of charge generation layers, wherein the charge generation layers and the light-emitting structures are arranged in a stacked mode, and one charge generation layer is arranged between any two adjacent light-emitting structures; the second electrode is arranged on one side of the light-emitting unit away from the first electrode; the thicknesses of the hole transport layers in the first, second, and third light emitting structures are different from each other. The present disclosure can promote carrier balance.
Description
Technical Field
The disclosure relates to the field of display technologies, and in particular, to a display device and a display panel.
Background
OLED (Organic Light Emitting Diode) display devices are very competitive and promising display devices because of their full solid state structure, self-luminescence, fast response speed, high brightness, full viewing angle, flexible display, etc. However, the current OLED display device has a problem of carrier imbalance.
Disclosure of Invention
The present disclosure provides a display device and a display panel capable of promoting carrier balance.
According to an aspect of the present disclosure, there is provided a display panel including:
a first electrode;
the light-emitting unit is arranged on the first electrode and comprises a plurality of light-emitting structures and a plurality of charge generation layers, wherein the charge generation layers and the light-emitting structures are arranged in a stacked mode, and one charge generation layer is arranged between any two adjacent light-emitting structures;
the second electrode is arranged on one side of the light-emitting unit away from the first electrode;
wherein each light emitting structure comprises a hole transport layer, and a plurality of light emitting structures comprise a first light emitting structure, a second light emitting structure and a third light emitting structure; the first light-emitting structure is positioned on one side of the light-emitting unit, which is close to the first electrode, and is in contact with the first electrode; the second light-emitting structure is positioned at one side of the light-emitting unit, which is close to the second electrode, and is in contact with the second electrode; the third light emitting structure is positioned between the first light emitting structure and the second light emitting structure; the thicknesses of the hole transport layers in the first, second, and third light emitting structures are different from each other.
Further, the first electrode is an anode, the second electrode is a cathode, and the thickness of the hole transport layer of the second light emitting structure is smaller than that of the hole transport layer of the third light emitting structure.
Further, the thickness of the hole transport layer of the second light emitting structure is less than half the thickness of the hole transport layer of the third light emitting structure.
Further, each of the light emitting structures includes a light emitting material layer, the thickness of the light emitting material layer of each of the light emitting structures is the same, the thickness of the hole transporting layer of the second light emitting structure is smaller than the thickness of the light emitting material layer, and the thickness of the light emitting material layer is smaller than the thickness of the hole transporting layer of the third light emitting structure.
Further, the first electrode is an anode, the second electrode is a cathode, and the thickness of the hole transport layer of the third light emitting structure is smaller than that of the hole transport layer of the first light emitting structure.
Further, the thickness of the hole transport layer of the third light emitting structure is less than half the thickness of the hole transport layer of the first light emitting structure.
Further, the first electrode is an anode, the second electrode is a cathode, and the thickness of the hole transport layer of the second light emitting structure is smaller than that of the hole transport layer of the first light emitting structure.
Further, the first electrode is an anode, the second electrode is a cathode, the second light-emitting structure further comprises an electron transport layer, and the thickness of the electron transport layer of the second light-emitting structure is greater than that of the hole transport layer of the second light-emitting structure.
Further, the first electrode is an anode, the second electrode is a cathode, the first light-emitting structure further comprises an electron transport layer, and the thickness of the electron transport layer of the first light-emitting structure is smaller than that of the hole transport layer of the first light-emitting structure.
Further, at least one of the light emitting structures includes an electron blocking layer having a thickness smaller than that of the hole transporting layer.
Further, the light emitting structure includes a light emitting material layer including a guest material, and a mass fraction of the guest material in the light emitting material layer is less than 2%.
Further, the light emitting structure includes a light emitting material layer including a host material, the host material being an electron transporting material.
Further, one of the first electrode and the second electrode is a reflective electrode, and the other is a semi-transmissive and semi-reflective electrode.
Further, the number of the third light emitting structures is one.
According to an aspect of the present disclosure, there is provided a display device including the above display panel.
According to the display device and the display panel, carriers required by the first light-emitting structure are provided by the first electrode and the charge generation layer, carriers required by the second light-emitting structure are provided by the second electrode and the charge generation layer, carriers required by the third light-emitting structure are provided by the charge generation layer, and therefore differences exist in injection efficiency of carriers of the three light-emitting structures.
Drawings
Fig. 1 is a schematic view of a display panel according to an embodiment of the present disclosure.
Fig. 2 is a schematic view showing the luminous intensity of the display panel.
Reference numerals illustrate: 1. a first electrode; 2. a second electrode; 3. a light emitting structure; 301. a first light emitting mechanism; 302. a second light emitting structure; 303. a third light emitting structure; 4. a charge generation layer; 5. a hole injection layer; 6. a hole transport layer; 7. an electron blocking layer; 8. a luminescent material layer; 9. an electron transport layer; 10. an electron injection layer; 11. a light extraction layer.
Detailed Description
Reference will now be made in detail to exemplary embodiments, examples of which are illustrated in the accompanying drawings. When the following description refers to the accompanying drawings, the same numbers in different drawings refer to the same or similar elements, unless otherwise indicated. The embodiments described in the following exemplary embodiments do not represent all embodiments consistent with the present disclosure. Rather, they are merely examples of apparatus consistent with some aspects of the disclosure as detailed in the accompanying claims.
The terminology used in the present disclosure is for the purpose of describing particular embodiments only and is not intended to be limiting of the present disclosure. Unless defined otherwise, technical or scientific terms used in this disclosure should be given the ordinary meaning as understood by one of ordinary skill in the art to which this disclosure belongs. The terms "first," "second," and the like in the description and in the claims, are not used for any order, quantity, or importance, but are used for distinguishing between different elements. Likewise, the terms "a" or "an" and the like do not denote a limitation of quantity, but rather denote the presence of at least one. "plurality" or "plurality" means two or more. Unless otherwise indicated, the terms "front," "rear," "lower," and/or "upper" and the like are merely for convenience of description and are not limited to one location or one spatial orientation. The word "comprising" or "comprises", and the like, means that elements or items appearing before "comprising" or "comprising" are encompassed by the element or item recited after "comprising" or "comprising" and equivalents thereof, and that other elements or items are not excluded. The terms "connected" or "connected," and the like, are not limited to physical or mechanical connections, but may include electrical connections, whether direct or indirect. As used in this disclosure and the appended claims, the singular forms "a," "an," and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. It should also be understood that the term "and/or" as used herein refers to and encompasses any or all possible combinations of one or more of the associated listed items.
As shown in fig. 1, the embodiment of the present disclosure provides a display panel. The display panel may include a first electrode 1, a light emitting unit, and a second electrode 2, wherein:
the light emitting unit is provided on the first electrode 1 and comprises a plurality of light emitting structures 3 and a plurality of charge generating layers 4. The plurality of charge generation layers 4 and the plurality of light emitting structures 3 are stacked. Wherein a charge generation layer 4 is arranged between any two adjacent light emitting structures 3. The second electrode 2 is arranged on the side of the light-emitting unit remote from the first electrode 1. Each light emitting structure 3 includes a hole transport layer 6. The plurality of light emitting structures 3 includes a first light emitting structure 301, a second light emitting structure 302, and a third light emitting structure 303. The first light emitting structure 301 is located at a side of the light emitting unit close to the first electrode 1 and contacts the first electrode 1. The second light emitting structure 302 is located at a side of the light emitting unit near the second electrode 2 and contacts the second electrode 2. The third light emitting structure 303 is located between the first light emitting structure 301 and the second light emitting structure 302. The thicknesses of the hole transport layers 6 of the two light emitting structures 3 are different among the first, second, and third light emitting structures 301, 302, and 303.
In the display panel according to the embodiment of the present disclosure, carriers required for the first light emitting structure 301 are provided by the first electrode 1 and the charge generation layer 4, carriers required for the second light emitting structure 302 are provided by the second electrode 2 and the charge generation layer 4, carriers required for the third light emitting structure 303 are provided by the charge generation layer 4, so that there is a difference in injection efficiency of carriers of the three light emitting structures 3, and since the thicknesses of the hole transport layers 6 of the two light emitting structures 3 are different in the first light emitting structure 301, the second light emitting structure 302, and the third light emitting structure 303, there is a difference in transport efficiency of holes of the two light emitting structures 3 in the first light emitting structure 301, the second light emitting structure 302, and the third light emitting structure 303, so as to solve the problem of carrier imbalance caused by the difference in injection efficiency of carriers of the light emitting structures 3.
The following describes each part of the display panel according to the embodiment of the present disclosure in detail:
the first electrode 1 may be an anode, or may be a cathode. The second electrode 2 may be disposed opposite the first electrode 1. Taking the first electrode 1 as an anode, the second electrode 2 as a cathode; taking the first electrode 1 as a cathode, the second electrode 2 as an anode. In addition, the first electrode 1 may be a reflective electrode, and the second electrode 2 may be a semi-transparent and semi-reflective electrode, so that an optical resonant cavity is formed between the first electrode 1 and the second electrode 2 to increase the light output intensity of the light emitting unit. In other embodiments of the present disclosure, the first electrode 1 may be a semi-transparent and semi-reflective electrode, and the second electrode 2 may be a reflective electrode. For example, the first electrode 1 is an anode and is a reflective electrode, the first electrode 1 is composed of a stacked Ag metal layer and an ITO layer, the thickness of the Ag metal layer may be 1000 a, and the thickness of the ITO layer may be 100 a-150 a; the second electrode 2 is a cathode and is a semi-transparent and semi-reflective electrode, the second electrode 2 is a Mg/Ag electrode, and the thickness of the Mg/Ag electrode may be 100 angstrom to 150 angstrom.
The display panel of the present disclosure may further include a driving back plate. The first electrode 1 may be provided on a driving backplate. The driving back plate may include a substrate and a driving circuit layer. The substrate may be a rigid substrate. The rigid substrate may be a glass substrate, a PMMA (Polymethyl methacrylate ) substrate, or the like. Of course, the substrate may also be a flexible substrate. The flexible substrate may be a PET (Polyethylene terephthalate ) substrate, a PEN (Polyethylene naphthalate two formic acid glycol ester, polyethylene naphthalate) substrate, or a PI (Polyimide) substrate, among others. The driving circuit layer may be provided on the substrate. The driving circuit layer may include a plurality of driving transistors. The driving transistor may be a thin film transistor, but the embodiment of the present disclosure is not limited thereto. The thin film transistor may be a top gate thin film transistor, and of course, the thin film transistor may also be a bottom gate thin film transistor. Taking a thin film transistor as an example, the driving circuit layer may include an active layer, a gate insulating layer, a gate electrode, an interlayer insulating layer, a source electrode, and a drain electrode. The active layer may be disposed on a substrate. The gate insulating layer may be disposed on the substrate and cover the active layer. The gate electrode may be provided on a side of the gate insulating layer remote from the substrate. The interlayer insulating layer may be disposed on the gate insulating layer and cover the gate electrode. The source and drain electrodes may be disposed on the interlayer insulating layer and connected to the active layer via a via hole passing through the interlayer insulating layer and the gate insulating layer. In addition, the driving back plate can further comprise a planarization layer. The planarization layer may be disposed on a surface of the driving circuit layer facing away from the substrate, and covers the source and the drain of the driving transistor. The first electrode 1 may be disposed on the planarization layer and connected to a source or drain of the driving transistor via a via hole passing through the planarization layer.
The light emitting unit is arranged on the first electrode 1. The light emitting unit may include a plurality of light emitting structures 3 and a plurality of charge generation layers 4. The colors of the emitted light of the plurality of light emitting structures 3 may be the same, for example, blue or the like. The plurality of charge generation layers 4 and the plurality of light emitting structures 3 are stacked. The light emitting structures 3 and the charge generating layers 4 are staggered, and a charge generating layer 4 is arranged between any two adjacent light emitting structures 3. The plurality of light emitting structures 3 may include a first light emitting structure 301, a second light emitting structure 302, and a third light emitting structure 303. The first light emitting structure 301 is disposed on the first electrode 1 and contacts the first electrode 1. The third light emitting structure 303 is disposed on a side of the first light emitting structure 301 remote from the first electrode 1. The second light emitting structure 302 is disposed on a side of the third light emitting structure 303 away from the first electrode 1 and contacts the second electrode 2. The number of the third light emitting structures 303 may be one, two, three, or more. Wherein, the plurality of third light emitting structures 303 are located between the first light emitting structure 301 and the second light emitting structure 302.
Each of the light emitting structures 3 described above may include a hole transporting layer 6, a light emitting material layer 8, and an electron transporting layer 9. The light emitting material layer 8 of each light emitting structure 3 is located between the hole transport layer 6 and the electron transport layer 9, and the thickness of the light emitting material layer 8 of each light emitting structure 3 may be the same. The light emitting material layer 8 may include a host material and a guest material. The guest material may be a fluorescent material, but of course, may also be a phosphorescent material, but the present disclosure is not limited thereto. Wherein the mass fraction of guest material in the luminescent material layer 8 is less than 2%. When the concentration of the guest material in the light emitting material layer 8 is too high, the concentration of the generated exciton is also high, so that the exciton is easy to quench, and the mass fraction of the guest is less than 2%, so that the problem that the exciton is easy to quench due to the too high concentration of the guest material can be solved. The host material may be an electron-transporting material, so that the interface of the carrier recombination zone is close to the hole transport layer 6, which contributes to improvement of light-emitting efficiency. In addition, each light emitting structure 3 may further include an electron blocking layer 7. The electron blocking layer 7 of each light emitting structure 3 is located between the light emitting material layer 8 of each light emitting structure 3 and the hole transporting layer 6 of each light emitting structure 3, and the thickness of the electron blocking layer 7 of each light emitting structure 3 may be smaller than the thickness of the hole transporting layer 6 of each light emitting structure 3, so as to reduce the thickness of the electron blocking layer 7 and avoid adverse effects on the hole injection efficiency.
The hole transport layer 6 of the first light emitting structure 301 is located between the first electrode 1 and the light emitting material layer 8 of the first light emitting structure 301. The first light emitting structure 301 may further include a hole injection layer 5, and the hole injection layer 5 of the first light emitting structure 301 is located between the first electrode 1 and the hole transport layer 6 of the first light emitting structure 301. The thickness of the electron transport layer 9 of the first light emitting structure 301 may be smaller than the thickness of the hole transport layer 6 of the first light emitting structure 301. Further, the thickness of the electron transport layer 9 of the first light emitting structure 301 may be less than half the thickness of the hole transport layer 6 of the first light emitting structure 301. Taking the first electrode 1 as an anode and the second electrode 2 as a cathode as an example, holes required by the first light emitting structure 301 are injected by the first electrode 1, electrons required by the first light emitting structure 301 are injected by the charge generation layer 4, so that the injection efficiency of the electrons is smaller than that of the holes, and the thickness of the electron transport layer 9 of the first light emitting structure 301 is smaller than that of the hole transport layer 6 of the first light emitting structure 301, so that the electron transport efficiency is larger than that of the holes, and carrier balance is promoted; meanwhile, since the thickness of the hole transport layer 6 of the first light emitting structure 301 is large, SPP (surface plasmon polariton) loss can be reduced.
The light emitting material layer 8 of the second light emitting structure 302 is located between the second electrode 2 and the hole transporting layer 6 of the second light emitting structure 302, and the thickness of the hole transporting layer 6 of the second light emitting structure 302 may be smaller than the thickness of the light emitting material layer 8. The second light emitting structure 302 may further include an electron injection layer 10, and the electron injection layer 10 of the second light emitting structure 302 is located between the second electrode 2 and the electron transport layer 9 of the second light emitting structure 302. The thickness of the electron transport layer 9 of the second light emitting structure 302 may be greater than the thickness of the hole transport layer 6 of the second light emitting structure 302. Taking the first electrode 1 as an anode and the second electrode 2 as a cathode as an example, holes required by the second light emitting structure 302 are injected by the charge generation layer 4, electrons required by the second light emitting structure 302 are injected by the second electrode 2, resulting in injection efficiency of electrons being greater than injection efficiency of holes, and the thickness of the electron transport layer 9 of the second light emitting structure 302 is greater than the thickness of the hole transport layer 6 of the second light emitting structure 302, so that the electron transport efficiency is less than the hole transport efficiency, and carrier balance is further promoted.
The hole transport layer 6 of the third light emitting structure 303 is located between the light emitting material layer 8 of the third light emitting structure 303 and the first light emitting structure 301. The thickness of the light emitting material layer 8 of the third light emitting structure 303 may be smaller than the thickness of the hole transporting layer 6 of the third light emitting structure 303, and since the thickness of the hole transporting layer 6 of the second light emitting structure 302 is smaller than the thickness of the light emitting material layer 8, the thickness of the hole transporting layer 6 of the second light emitting structure 302 is smaller than the thickness of the hole transporting layer 6 of the third light emitting structure 303. Taking the first electrode 1 as an anode and the second electrode 2 as a cathode as an example, holes required by the second light emitting structure 302 are injected by the charge generation layer 4, electrons required by the second light emitting structure 302 are injected by the second electrode 2, holes and electrons required by the third light emitting structure 303 are both injected by the charge generation layer 4, so that the injection efficiency of electrons of the third light emitting structure 303 is lower than that of electrons of the second light emitting structure 302, that is, the injection efficiency of electrons of the third light emitting structure 303 is lower, and the thickness of the hole transport layer 6 of the second light emitting structure 302 is smaller than that of the hole transport layer 6 of the third light emitting structure 303, so that the transport efficiency of holes of the third light emitting structure 303 is reduced, and carrier balance can be promoted.
The thicknesses of the hole transport layers 6 of the two light emitting structures 3 are different among the first, second, and third light emitting structures 301, 302, and 303. In an embodiment of the present disclosure, the thickness of the hole transport layer 6 of the second light emitting structure 302 may be smaller than the thickness of the hole transport layer 6 of the third light emitting structure 303. Further, the thickness of the hole transport layer 6 of the second light emitting structure 302 may be less than half the thickness of the hole transport layer 6 of the third light emitting structure 303. Fig. 2 shows a change curve of the light emission intensity of the display panel. Curve S1 is a change curve of the light emission intensity of the display panel under the condition that the thickness of the hole transport layer 6 of the second light emitting structure 302 is greater than the thickness of the hole transport layer 6 of the third light emitting structure 303; the curve S2 is a change curve of the light emission intensity of the display panel under the condition that the thickness of the hole transport layer 6 of the second light emitting structure 302 is smaller than that of the hole transport layer 6 of the third light emitting structure 303. As can be seen from fig. 2, the peak of the curve S2 is larger than the peak of the curve S1, and the luminous efficiency of the surface display panel is improved.
In another embodiment of the present disclosure, the thickness of the hole transport layer 6 of the third light emitting structure 303 may be smaller than the thickness of the hole transport layer 6 of the first light emitting structure 301. Further, the thickness of the hole transport layer 6 of the third light emitting structure 303 is less than half the thickness of the hole transport layer 6 of the first light emitting structure 301. Taking the first electrode 1 as an anode and the second electrode 2 as a cathode as an example, holes required by the first light emitting structure 301 are injected by the first electrode 1, electrons required by the first light emitting structure 301 are injected by the charge generation layer 4, and holes and electrons required by the third light emitting structure 303 are both injected by the charge generation layer 4, so that the injection efficiency of the holes of the third light emitting structure 303 is lower than that of the first light emitting structure 301, namely, the injection efficiency of the holes of the third light emitting structure 303 is lower, and the thickness of the hole transmission layer 6 of the third light emitting structure 303 is smaller than that of the hole transmission layer 6 of the first light emitting structure 301, so that the transmission efficiency of the holes of the third light emitting structure 303 is improved, and carrier balance can be promoted; meanwhile, since the thickness of the hole transport layer 6 of the first light emitting structure 301 is large, SPP (surface plasmon polariton) loss can be reduced.
In another embodiment of the present disclosure, the thickness of the hole transport layer 6 of the second light emitting structure 302 may be smaller than the thickness of the hole transport layer 6 of the first light emitting structure 301. Taking the first electrode 1 as an anode and the second electrode 2 as a cathode as an example, holes required by the second light emitting structure 302 are injected by the charge generation layer 4, holes required by the first light emitting structure 301 are injected by the first electrode 1, and thus the injection efficiency of the holes of the second light emitting structure 302 is lower than that of the holes of the first light emitting structure 301, the thickness of the hole transport layer 6 of the second light emitting structure 302 is made to be smaller than that of the hole transport layer 6 of the first light emitting structure 301, so that the transport efficiency of the holes of the second light emitting structure 302 is improved, and carrier balance can be promoted.
Further, the display panel of the embodiment of the present disclosure may further include a light extraction layer 11 (CPL) and a color conversion layer. The light extraction layer 11 may be located on the side of the second electrode 2 facing away from the first electrode 1. The color conversion layer may be located on the side of the light extraction layer 11 facing away from the first electrode 1. The color conversion layer may be a quantum dot layer.
The embodiment of the disclosure also provides a display device. The display device may include the display panel according to any one of the above embodiments. The display device can be a mobile phone, a tablet personal computer, a television and the like. Since the display panel included in the display device of the embodiment of the present disclosure is the same as the display panel in the embodiment of the display panel, it has the same beneficial effects, and the disclosure is not repeated here.
The foregoing disclosure is not intended to be limited to the preferred embodiments of the present disclosure, but rather is to be construed as limited to the embodiments disclosed, and modifications and equivalent arrangements may be made in accordance with the principles of the present disclosure without departing from the scope of the disclosure.
Claims (13)
1. A display panel, comprising:
a first electrode;
the light-emitting unit is arranged on the first electrode and comprises a plurality of light-emitting structures and a plurality of charge generation layers, wherein the charge generation layers and the light-emitting structures are arranged in a stacked mode, and one charge generation layer is arranged between any two adjacent light-emitting structures;
the second electrode is arranged on one side of the light-emitting unit away from the first electrode;
wherein each light emitting structure comprises a hole transport layer, and a plurality of light emitting structures comprise a first light emitting structure, a second light emitting structure and a third light emitting structure; the first light-emitting structure is positioned on one side of the light-emitting unit, which is close to the first electrode, and is in contact with the first electrode; the second light-emitting structure is positioned at one side of the light-emitting unit, which is close to the second electrode, and is in contact with the second electrode; the third light emitting structure is positioned between the first light emitting structure and the second light emitting structure; the thicknesses of the hole transport layers of the two light emitting structures in the first light emitting structure, the second light emitting structure and the third light emitting structure are different;
the first electrode is an anode, the second electrode is a cathode, and the thickness of the hole transport layer of the third light-emitting structure is smaller than that of the hole transport layer of the first light-emitting structure;
each light emitting structure includes a light emitting material layer and an electron blocking layer, the electron blocking layer of each light emitting structure is located between the light emitting material layer of each light emitting structure and the hole transporting layer of each light emitting structure, and a thickness of the electron blocking layer of each light emitting structure is smaller than a thickness of the hole transporting layer of each light emitting structure.
2. The display panel of claim 1, wherein a thickness of the hole transport layer of the second light emitting structure is less than a thickness of the hole transport layer of the third light emitting structure.
3. The display panel according to claim 2, wherein a thickness of the hole transport layer of the second light emitting structure is less than half a thickness of the hole transport layer of the third light emitting structure.
4. The display panel according to claim 1 or 2, wherein the thickness of the light emitting material layer of each of the light emitting structures is the same, the thickness of the hole transporting layer of the second light emitting structure is smaller than the thickness of the light emitting material layer, and the thickness of the light emitting material layer is smaller than the thickness of the hole transporting layer of the third light emitting structure.
5. The display panel of claim 1, wherein a thickness of the hole transport layer of the third light emitting structure is less than half a thickness of the hole transport layer of the first light emitting structure.
6. The display panel of claim 1, wherein a thickness of the hole transport layer of the second light emitting structure is less than a thickness of the hole transport layer of the first light emitting structure.
7. The display panel of claim 1, wherein the second light emitting structure further comprises an electron transport layer, the electron transport layer of the second light emitting structure having a thickness greater than a thickness of the hole transport layer of the second light emitting structure.
8. The display panel of claim 1, wherein the first light emitting structure further comprises an electron transport layer, the electron transport layer of the first light emitting structure having a thickness that is less than a thickness of the hole transport layer of the first light emitting structure.
9. The display panel of claim 1, wherein the light emitting structure comprises a layer of light emitting material comprising a guest material, wherein the mass fraction of the guest material in the layer of light emitting material is less than 2%.
10. The display panel of claim 1, wherein the light emitting structure comprises a layer of light emitting material comprising a host material that is an electron transporting material.
11. The display panel of claim 1, wherein one of the first electrode and the second electrode is a reflective electrode and the other is a transflective electrode.
12. The display panel according to claim 1, wherein the number of the third light emitting structures is one.
13. A display device comprising the display panel of any one of claims 1-12.
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| CN103915569A (en) * | 2012-12-28 | 2014-07-09 | 乐金显示有限公司 | Organic light emitting display device and method of manufacturing the same |
| CN110870088A (en) * | 2017-07-06 | 2020-03-06 | 九州有机光材股份有限公司 | Organic light emitting element |
| CN109755400A (en) * | 2018-12-28 | 2019-05-14 | 云谷（固安）科技有限公司 | A kind of light-emitting component and display panel |
| CN112038460A (en) * | 2020-09-28 | 2020-12-04 | 京东方科技集团股份有限公司 | Light-emitting device, display substrate and display device |
| CN112952013A (en) * | 2021-02-26 | 2021-06-11 | 京东方科技集团股份有限公司 | Organic light emitting diode, manufacturing method thereof, display substrate and display device |
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