CN112038460A - Light-emitting device, display substrate and display device - Google Patents

Light-emitting device, display substrate and display device Download PDF

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Publication number
CN112038460A
CN112038460A CN202011045669.4A CN202011045669A CN112038460A CN 112038460 A CN112038460 A CN 112038460A CN 202011045669 A CN202011045669 A CN 202011045669A CN 112038460 A CN112038460 A CN 112038460A
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China
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layer
electron transport
light
transport layer
quantum dot
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李东
张宜驰
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BOE Technology Group Co Ltd
Beijing BOE Technology Development Co Ltd
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BOE Technology Group Co Ltd
Beijing BOE Technology Development Co Ltd
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Priority to CN202011045669.4A priority Critical patent/CN112038460A/en
Publication of CN112038460A publication Critical patent/CN112038460A/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/115—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising active inorganic nanostructures, e.g. luminescent quantum dots
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/15—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission
    • H01L27/153—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars
    • H01L27/156—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components with at least one potential-jump barrier or surface barrier specially adapted for light emission in a repetitive configuration, e.g. LED bars two-dimensional arrays
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/14—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure
    • H01L33/145—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a carrier transport control structure, e.g. highly-doped semiconductor layer or current-blocking structure with a current-blocking structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/28—Materials of the light emitting region containing only elements of group II and group VI of the periodic system
    • H01L33/285—Materials of the light emitting region containing only elements of group II and group VI of the periodic system characterised by the doping materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H10K50/165—Electron transporting layers comprising dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/18—Carrier blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays

Abstract

The invention provides a light emitting device, a display substrate and a display apparatus, the light emitting device includes: a light emitting layer having an electron transport material and quantum dots therein; the electroluminescent device comprises a first electron transport layer and a hole transport layer, wherein the first electron transport layer, the luminescent layer and the hole transport layer are sequentially stacked. In the light-emitting device, the light-emitting layer is provided with the electron transport material and the quantum dots, and the electron transport material in the light-emitting layer can block holes, so that the holes are prevented from being enriched in the light-emitting layer, carrier balance is facilitated, auger recombination of excitons in the quantum dots caused by redundant holes is reduced, and the light-emitting efficiency is improved.

Description

Light-emitting device, display substrate and display device
Technical Field
The invention relates to the technical field of display, in particular to a light-emitting device, a display substrate and a display device.
Background
Quantum Dots (QDs) as a novel luminescent material have the advantages of high color purity, high luminescent quantum efficiency, adjustable luminescent color, long service life, and the like, and become a research hotspot of the current novel LED luminescent materials. In quantum dot light emitting device, the electron of injection hardly injects the quantum dot layer into, and the hole enriches in the quantum dot layer, influences the carrier balance, and quantum dot is because auger recombination and fluorescence quantum efficiency reduces simultaneously, finally influences the luminous efficacy of device.
Disclosure of Invention
In view of the above, the present invention provides a light emitting device, a display substrate and a display apparatus, which are used to solve the problems that holes are easily concentrated in a quantum dot layer, which affects carrier balance and affects light emitting efficiency of the device.
In order to solve the technical problems, the invention adopts the following technical scheme:
in a first aspect, a light emitting device according to an embodiment of the present invention includes:
a light emitting layer having an electron transport material and quantum dots therein;
the electroluminescent device comprises a first electron transport layer and a hole transport layer, wherein the first electron transport layer, the luminescent layer and the hole transport layer are sequentially stacked.
Wherein the quantum dots are dispersed in the electron transport material; or
The light emitting layer includes: a quantum dot layer and a second electron transport layer, the second electron transport layer being located between the quantum dot layer and the hole transport layer; or
The light emitting layer includes: the quantum dot layer and the second electron transport layer are alternately stacked.
The luminescent layer comprises a quantum dot layer and a second electron transport layer, the quantum dot layer and the second electron transport layer are alternately stacked, and the positions, close to the first electron transport layer and the hole transport layer, in the luminescent layer are the quantum dot layers respectively.
The luminescent layer comprises a quantum dot layer and a second electron transport layer, the quantum dot layer and the second electron transport layer are alternately stacked, and the positions, close to the first electron transport layer and the hole transport layer, in the luminescent layer are the second electron transport layers respectively.
Wherein the light emitting device further comprises:
the first electron transport layer, the light emitting layer, the hole blocking layer and the hole transport layer are sequentially stacked.
Wherein the hole blocking layer is an electron transport material layer.
The thickness of the first electron transport layer is 50nm-300nm, the thickness of the light-emitting layer is 20nm-50nm, and the thickness of the hole blocking layer is 5nm-10 nm.
Wherein, still include:
the light-emitting layer comprises an electron injection layer and a hole injection layer, wherein the electron injection layer, the first electron transport layer, the light-emitting layer, the hole transport layer and the hole injection layer are sequentially stacked.
In a second aspect, a display substrate according to an embodiment of the present invention includes the light emitting device described in the above embodiment.
In a third aspect, a display device according to an embodiment of the present invention includes the display substrate described in the above embodiments.
The technical scheme of the invention has the following beneficial effects:
according to the light-emitting device provided by the embodiment of the invention, the light-emitting layer is provided with the electron transport material and the quantum dots, the first electron transport layer, the light-emitting layer and the hole transport layer are sequentially stacked, the light-emitting layer is provided with the electron transport material and the quantum dots, holes can be blocked by the electron transport material, the holes are prevented from being enriched in the light-emitting layer, the carrier balance is facilitated, the Auger recombination of excitons in the quantum dots caused by redundant holes is reduced, and the light-emitting efficiency is improved.
Drawings
Fig. 1 is a schematic structural view of a light-emitting device of an embodiment of the present invention;
fig. 2 is another schematic structural view of a light-emitting device of an embodiment of the present invention;
fig. 3 is a schematic view of still another structure of a light-emitting device according to an embodiment of the present invention;
fig. 4 is a schematic view of still another structure of a light-emitting device according to an embodiment of the present invention;
fig. 5 is a schematic view of a structure of a light emitting layer in a light emitting device according to an embodiment of the present invention;
fig. 6 is another schematic view of a structure of a light-emitting layer in a light-emitting device according to an embodiment of the present invention;
fig. 7 is still another schematic view of a structure of a light-emitting layer in a light-emitting device according to an embodiment of the present invention;
fig. 8 is a schematic view of still another structure of a light-emitting device of an embodiment of the invention;
fig. 9 is a schematic view of still another structure of a light-emitting device of an embodiment of the invention;
fig. 10 is a schematic view of still another structure of a light-emitting device of an embodiment of the invention;
fig. 11 is a schematic view of still another structure of the light-emitting device of the embodiment of the invention.
Reference numerals
A light-emitting layer 10; a quantum dot layer 11; a second electron transport layer 12;
a first electron transport layer 20;
a hole transport layer 30;
a hole blocking layer 40;
an electron injection layer 50;
a hole injection layer 60;
a first electrode 71 and a second electrode 72.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the drawings of the embodiments of the present invention. It is to be understood that the embodiments described are only a few embodiments of the present invention, and not all embodiments. All other embodiments, which can be derived by a person skilled in the art from the described embodiments of the invention, are within the scope of the invention.
The following specifically describes a light emitting device according to an embodiment of the present invention.
As shown in fig. 1 to 7, a light emitting device according to an embodiment of the present invention includes: the organic electroluminescent device comprises a light-emitting layer 10, a first electron transport layer 20 and a hole transport layer 30, wherein the light-emitting layer 10 is provided with an electron transport material and quantum dots, and the first electron transport layer 20, the light-emitting layer 10 and the hole transport layer 30 are sequentially stacked. The light-emitting layer 10 can be a light-emitting layer film formed by uniformly mixing quantum dots and an electron transport material or other main materials with a hole blocking effect according to a certain proportion and then depositing the mixture together in a spin coating manner; the first electron transport layer 20 can be a ZnO film doped with ZnO or Mg, Al, Zr, Y, etc., and the first electron transport layer 20 can be an n-type semiconductor film deposited with ZnO, etc., by a sputtering method; the surface of the first electron transport layer 20 may be roughened by plasma etching or sand blasting to increase the contact between the quantum dots and the electron transport layer, thereby avoiding leakage caused by direct contact between the ZnO part and the hole transport layer due to the accumulation of the quantum dots in a nanoparticle state on the smooth ZnO surface and the small contact area.
In the light emitting device of the present invention, the light emitting layer 10 has the electron transport material and the quantum dots, and the electron transport material can block holes, thereby avoiding the holes from being enriched in the light emitting layer, facilitating the carrier balance, reducing the auger recombination of excitons in the quantum dots caused by the redundant holes, and improving the light emitting efficiency.
In some embodiments of the present invention, as shown in fig. 5, the light emitting layer 10 has an electron transport material and quantum dots, the quantum dots are dispersed in the electron transport material, and can be uniformly dispersed in the electron transport material, and the quantum dots are dispersed by the electron transport material, so that the distance between the quantum dots can be increased. The light-emitting layer 10 may have a host material and quantum dots, the quantum dots may be dispersed in the host material, the distance between the quantum dots may be increased, and the host material may be selected to have a hole blocking effect, thereby facilitating the balance of carriers.
In some embodiments, as shown in fig. 4, the light emitting layer 10 includes: the quantum dot layer 11 and the second electron transport layer 12, the second electron transport layer 12 is located between the quantum dot layer 11 and the hole transport layer 30, the second electron transport layer 12 is formed by using an electron transport material, and the second electron transport layer 12 is arranged in the light-emitting layer 10 to block holes, so that the holes are prevented from being enriched in the light-emitting layer, and carrier balance is facilitated; or
The light emitting layer 10 includes: a quantum dot layer 11 and a second electron transport layer 12, the light emitting layer 10 may include at least one quantum dot layer 11 and at least two second electron transport layers 12, for example, the light emitting layer 10 may include one quantum dot layer 11 and two second electron transport layers 12, as shown in fig. 8, the quantum dot layer 11 is located between two second electron transport layers 12, holes can be blocked from being enriched in the quantum dot layer 11 through the second electron transport layers 12, carrier balance is facilitated, and excitons in the quantum dot layer 11 can be bound between the two second electron transport layers 12, thereby inhibiting excitons from being diffused to both sides; or the light emitting layer 10 may include at least two quantum dot layers 11 and at least one second electron transport layer 12, for example, as shown in fig. 9, the light emitting layer may include two quantum dot layers 11 and one second electron transport layer 12, the second electron transport layer 12 is disposed between the two quantum dot layers 11, the two quantum dot layers 11 are separated by the second electron transport layer 12, and since the second electron transport layer 12 can block holes, holes are not easily enriched in the quantum dot layer 11 far from the hole transport layer 30 in the two quantum dot layers 11, which is beneficial to the carrier balance of the quantum dot layer 11; for example, the quantum dot layer 11 and the second electron transport layer 12 may also have multiple layers, and the number of the layers may be appropriately selected as needed, and the quantum dot layer 11 and the second electron transport layer 12 are alternately stacked. The second electron transport layer 12 is formed by using an electron transport material, and the quantum dot layers 11 and the second electron transport layers 12 are alternately arranged in the light emitting layer 10, so that the distance between quantum dots can be increased, the balance of carriers is facilitated, and the specific number of the quantum dot layers 11 and the second electron transport layers 12 can be reasonably selected according to needs. The first electron transport layer 20 and the second electron transport layer 12 may be formed of an electron transport material, and the materials of the first electron transport layer 20 and the second electron transport layer 12 may be the same or different.
In the embodiment of the present invention, as shown in fig. 6 and 7, the light emitting layer 10 may include a quantum dot layer 11 and a second electron transport layer 12, the quantum dot layer 11 may have red, green and blue quantum dots therein, and the quantum dot layer 11 is stacked with the second electron transport layer 12. The quantum dot layer 11 and the second electron transport layer 12 may have multiple layers, respectively, the quantum dot layer 11 and the second electron transport layer 12 may be stacked alternately, which may increase the distance between the quantum dots, and is beneficial to the balance of carriers, and the specific number of layers of the quantum dot layer 11 and the second electron transport layer 12 may be reasonably selected according to the needs. Alternatively, as shown in fig. 6, the light-emitting layer 10 includes a quantum dot layer 11 and a second electron transport layer 12, the quantum dot layer 11 and the second electron transport layer 12 are alternately stacked, and the positions of the light-emitting layer 10 close to the first electron transport layer 20 and the hole transport layer 30 may be the quantum dot layers 11 respectively, for example, as shown in fig. 10, the light-emitting layer includes three quantum dot layers 11 and two second electron transport layers 12, the three quantum dot layers 11 and two second electron transport layers 12 are alternately stacked, and holes are not easily enriched in the two quantum dot layers 11 far from the hole transport layer 30 in the three quantum dot layers 11, which is beneficial for carrier balance of the two quantum dot layers 11; alternatively, as shown in fig. 7, the light-emitting layer 10 includes quantum dot layers 11 and second electron transport layers 12, the quantum dot layers 11 and the second electron transport layers 12 are alternately stacked, and the second electron transport layers 12 are respectively located at positions in the light-emitting layer 10 close to the first electron transport layers 20 and the hole transport layers 30, for example, as shown in fig. 11, the light-emitting layer includes two quantum dot layers 11 and three second electron transport layers 12, two quantum dot layers 11 and three second electron transport layers 12 are alternately stacked, each quantum dot layer 11 is located between two adjacent second electron transport layers 12, and holes can be blocked from being enriched in the quantum dot layers 11 by the second electron transport layers 12, which is favorable for carrier balance; the quantum dot layer 11 is disposed in different layers, so that the distance between quantum dots in different layers can be increased, and excitons in the quantum dot layer can be dispersed and bound between the two second electron transport layers 12, thereby inhibiting excitons from diffusing to both sides.
In some embodiments, as shown in fig. 1, the light emitting device further comprises: the hole blocking layer 40, the first electron transport layer 20, the light emitting layer 10, the hole blocking layer 40, and the hole transport layer 30 are sequentially stacked. The hole blocking layer 40 can further effectively block holes, thereby preventing the holes from being enriched in the light emitting layer and facilitating carrier balance. The hole blocking layer 40 may be a sputtered or spin-coated ZnO nanoparticle layer, a doped ZnMgO nanoparticle layer, or the like, or may be a vapor-deposited organic small molecule material layer, the hole blocking layer 40 may be about 5nm to 10nm, the HOMO level of the hole blocking layer 40 is deep, about 6.2 to 7.2eV, and the hole blocking layer can block holes, which is beneficial to carrier balance.
In the embodiment of the present invention, the hole blocking layer 40 may be an electron transport material layer, the material of the hole blocking layer 40 may be the same as or different from the material of the first electron transport layer 20 and the second electron transport layer 12, and the hole blocking layer 40, the first electron transport layer 20, and the second electron transport layer 12 may all use an electron transport material, for example, the hole blocking layer 40 and the first electron transport layer 20 may use ZnO material, and the material used for the second electron transport layer 12 and the hole blocking layer 40 may also be other host materials with deeper HOMO having a hole blocking effect, and may be specifically selected according to needs.
In some embodiments, the thickness of the first electron transport layer 20 may be 50nm to 300nm, the thickness of the light emitting layer 10 may be 20nm to 50nm, the thickness of the hole blocking layer 40 may be 5nm to 10nm, and the specific thicknesses of the different layers may be selected as desired.
In an embodiment of the present invention, as shown in fig. 3, the light emitting device further includes an electron injection layer 50 and a hole injection layer 60, and the electron injection layer 50, the first electron transport layer 20, the light emitting layer 10, the hole transport layer 30, and the hole injection layer 60 are sequentially stacked. Meanwhile, the organic light emitting diode may further include a hole blocking layer 40, and the electron injection layer 50, the first electron transport layer 20, the light emitting layer 10, the hole blocking layer 40, the hole transport layer 30, and the hole injection layer 60 are sequentially stacked.
The light emitting device may further include a first electrode 71 and a second electrode 72, and the first electrode 71, the electron injection layer 50, the first electron transport layer 20, the light emitting layer 10, the hole blocking layer 40, the hole transport layer 30, the hole injection layer 60, and the second electrode 72 may be sequentially stacked, wherein the first electrode 71 may be a cathode, and the second electrode 72 may be an anode. The first electrode 71 may be disposed on a substrate, the substrate may be a glass or flexible PET (polyester resin) substrate, and the first electrode 71 may be transparent ITO (indium tin oxide), FTO (fluorine-doped SnO)2Conductive glass), conductive polymer, etc., or opaque metal electrodes such as Al, Ag, etc.; the second electrode 72 may be made of Al, Ag, or IZO, and the thickness of the second electrode 72 may be 10nm to 100 nm.
The method of manufacturing the light emitting device may be as follows:
depositing a first electrode 71 on a specific substrate, wherein the substrate can be a glass or flexible PET substrate, the first electrode 71 can be a transparent ITO, FTO or conductive polymer, and the like, and can also be an opaque metal electrode such as Al, Ag, and the like;
depositing a ZnO film or a ZnO film doped with Mg, Al, Zr, Y and the like on the first electrode 71 in a magnetron sputtering mode to serve as the first electron transport layer 20, wherein the thickness of each sub-pixel electron transport layer can be deposited according to needs and can be between 50nm and 300 nm.
Sequentially depositing a luminescent layer 10 with red, green and blue quantum dots on the first electron transport layer 20 by ink-jet printing and other modes, wherein the thickness can be 20nm-50 nm;
preparing a ZnO layer on the luminous layer 10 by sputtering or spin coating, wherein the thickness is about 5nm-10 nm;
depositing a hole transport layer 30 and a hole injection layer 60 on the ZnO layer in sequence by adopting an evaporation mode;
forming a second electrode 72, wherein the second electrode 72 may be metal Al, Ag, etc., or depositing IZO by magnetron sputtering, and the thickness thereof may be 10nm to 100nm, and finally obtaining the light emitting device.
Embodiments of the present invention provide a display substrate, including the light emitting device described in the above embodiments, and the display substrate having the light emitting device in the above embodiments is favorable for carrier balance and improves light emitting efficiency.
An embodiment of the present invention provides a display device, including the display substrate described in the above embodiments, where the display device having the display substrate in the above embodiments can improve light emitting efficiency and display effect.
Unless defined otherwise, technical or scientific terms used herein shall have the ordinary meaning as understood by one of ordinary skill in the art to which this invention belongs. The use of "first," "second," and similar terms in the present application do not denote any order, quantity, or importance, but rather the terms are used to distinguish one element from another. The terms "connected" or "coupled" and the like are not restricted to physical or mechanical connections, but may include electrical connections, whether direct or indirect. "upper", "lower", "left", "right", and the like are used merely to indicate relative positional relationships, and when the absolute position of the object being described is changed, the relative positional relationships are changed accordingly.
While the foregoing is directed to the preferred embodiment of the present invention, it will be understood by those skilled in the art that various changes and modifications may be made without departing from the spirit and scope of the invention as defined in the appended claims.

Claims (10)

1. A light emitting device, comprising:
a light emitting layer having an electron transport material and quantum dots therein;
the electroluminescent device comprises a first electron transport layer and a hole transport layer, wherein the first electron transport layer, the luminescent layer and the hole transport layer are sequentially stacked.
2. The light-emitting device according to claim 1, wherein the quantum dots are dispersed in the electron transport material; or
The light emitting layer includes: a quantum dot layer and a second electron transport layer, the second electron transport layer being located between the quantum dot layer and the hole transport layer; or
The light emitting layer includes: the quantum dot layer and the second electron transport layer are alternately stacked.
3. A light-emitting device according to claim 2, wherein the light-emitting layer comprises a quantum dot layer and a second electron transport layer, the quantum dot layer and the second electron transport layer are alternately stacked, and the quantum dot layer is located in the light-emitting layer adjacent to the first electron transport layer and the hole transport layer.
4. A light-emitting device according to claim 2, wherein the light-emitting layer comprises a quantum dot layer and a second electron transport layer, the quantum dot layer and the second electron transport layer are alternately stacked, and the second electron transport layer is located in the light-emitting layer near the first electron transport layer and the hole transport layer, respectively.
5. The light-emitting device according to claim 1 or 2, further comprising:
the first electron transport layer, the light emitting layer, the hole blocking layer and the hole transport layer are sequentially stacked.
6. The light-emitting device according to claim 5, wherein the hole-blocking layer is an electron-transporting material layer.
7. The light-emitting device according to claim 5, wherein the first electron-transporting layer has a thickness of 50nm to 300nm, the light-emitting layer has a thickness of 20nm to 50nm, and the hole-blocking layer has a thickness of 5nm to 10 nm.
8. The light-emitting device according to claim 1, further comprising:
the light-emitting layer comprises an electron injection layer and a hole injection layer, wherein the electron injection layer, the first electron transport layer, the light-emitting layer, the hole transport layer and the hole injection layer are sequentially stacked.
9. A display substrate comprising the light-emitting device according to any one of claims 1 to 8.
10. A display device comprising the display substrate as claimed in claim 9.
CN202011045669.4A 2020-09-28 2020-09-28 Light-emitting device, display substrate and display device Pending CN112038460A (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113555509A (en) * 2021-07-20 2021-10-26 京东方科技集团股份有限公司 Display device and display panel
WO2023206319A1 (en) * 2022-04-29 2023-11-02 京东方科技集团股份有限公司 Light-emitting device and manufacturing method therefor, and display substrate and display apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113555509A (en) * 2021-07-20 2021-10-26 京东方科技集团股份有限公司 Display device and display panel
CN113555509B (en) * 2021-07-20 2023-08-15 京东方科技集团股份有限公司 Display device and display panel
WO2023206319A1 (en) * 2022-04-29 2023-11-02 京东方科技集团股份有限公司 Light-emitting device and manufacturing method therefor, and display substrate and display apparatus

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