CN105914228B

CN105914228B - O L ED device and O L ED display

Info

Publication number: CN105914228B
Application number: CN201610390681.6A
Authority: CN
Inventors: 李先杰
Original assignee: Shenzhen China Star Optoelectronics Technology Co Ltd
Current assignee: TCL China Star Optoelectronics Technology Co Ltd
Priority date: 2016-06-02
Filing date: 2016-06-02
Publication date: 2020-07-28
Anticipated expiration: 2036-06-02
Also published as: CN105914228A

Abstract

The O L ED device comprises the O L ED device, wherein two or more light-emitting units are connected in series, so that the luminous intensity of the O L ED device can be multiplied, and the display effect of the O L ED display can be improved.

Description

O L ED device and O L ED display

Technical Field

The invention relates to the technical field of display, in particular to an O L ED device and an O L ED display.

Background

An O L ED (Organic light-Emitting Diode) display, also called an Organic electroluminescent display, is a new flat panel display device, and has the advantages of simple manufacturing process, low cost, low power consumption, high light-Emitting brightness, wide application range of operating temperature, light and thin volume, fast response speed, easy realization of color display and large-screen display, easy realization of matching with an integrated circuit driver, easy realization of flexible display, and the like, thereby having a wide application prospect.

The O L ED can be classified into two broad categories, i.e., direct addressing and thin film transistor Matrix addressing, of Passive Matrix O L ED (Passive Matrix O L ED, PMO L ED) and Active Matrix O L ED (Active Matrix O L ED, AMO L ED) according to driving methods, wherein the AMO L ED has pixels arranged in an array, belongs to an Active display type, has high luminous efficacy, and is generally used as a large-sized display device with high definition.

At present, the proportion of an AMO L ED display used for a small-size display (such as a mobile phone and a tablet personal computer) is higher and higher, and the technical route is that a red, green and blue light emitting layer is prepared by adopting a precision Metal Mask (FMM) to form red, green and blue sub-pixels, so that an AMO L ED display screen with red, green and blue sub-pixels in parallel (Side by Side) is obtained.

In addition, the light emitting intensity of the existing O L ED device is low, which is also not beneficial to improving the display effect of the O L ED display, fig. 1 is a schematic structural diagram of an existing ordinary top-emission blue O L ED device, the top-emission blue O L ED device includes a total reflection anode 100, a hole injection layer 200, a hole transport layer 300, an electron blocking layer 400, a blue light emitting layer 500, an electron transport layer 600, and a semitransparent cathode 700, which are sequentially arranged from bottom to top, and the electron blocking layer 400, the blue light emitting layer 500, and the electron transport layer 600 constitute a blue light emitting unit, and since the top-emission O L ED device only has one blue light emitting unit, the light emitting intensity is low, so that the display effect of the O L ED display is poor.

Disclosure of Invention

The invention aims to provide an O L ED device which can improve the luminous intensity and is beneficial to improving the display effect of an O L ED display.

The invention also aims to provide an O L ED display, which comprises the O L ED device, can improve the luminous intensity, is favorable for exciting the quantum dot film to emit red and green light, obtains red, green and blue three primary colors of light with high color saturation, improves the color gamut of the O L ED display, and is favorable for improving the resolution of the O L ED display.

In order to achieve the above object, the present invention provides an O L ED device, including an anode, a hole injection layer, a hole transport layer, a first light emitting unit, a charge generation layer, a second light emitting unit, and a cathode sequentially arranged from bottom to top;

the first light-emitting unit comprises a first electron blocking layer, a first light-emitting layer and a first electron transmission layer which are sequentially arranged from bottom to top, and the second light-emitting unit comprises a second electron blocking layer, a second light-emitting layer and a second electron transmission layer which are sequentially arranged from bottom to top;

the charge generation layer comprises an electron generation layer and a hole generation layer which are arranged in sequence from bottom to top.

The first light-emitting layer and the second light-emitting layer are both blue light-emitting layers, and the materials of the blue light-emitting layers comprise 4,4' -bis (2,2) -distyryl-1, 1 biphenyl; the thickness of the first light-emitting layer is 5 nm-40 nm; the thickness of the second light-emitting layer is 5 nm-40 nm.

The anode is a total reflection anode, and the cathode is a semitransparent cathode;

the anode is a composite layer formed by two indium tin oxide layers and a metal layer; the thickness of the indium tin oxide layer is 5 nm-50 nm; the thickness of the metal layer is 80 nm-1000 nm;

the cathode is made of one or more of lithium, lithium alloy, magnesium alloy, calcium alloy, strontium alloy, lanthanum alloy, cerium alloy, europium alloy, ytterbium alloy, aluminum alloy, cesium alloy, rubidium and rubidium alloy; the thickness of the cathode is 5 nm-30 nm.

The material of the electron generation layer comprises hexanitrile hexaazatriphenylene; the material of the hole generating layer comprises N, N '-diphenyl-N, N' - (1-naphthyl) -1,1 '-biphenyl-4, 4' -diamine; the thickness of the electron generation layer is 5 nm-50 nm; the film thickness of the hole generation layer is 5nm to 50 nm.

The material of the hole injection layer comprises hexanitrile hexaazatriphenylene; the thickness of the hole injection layer is 5 nm-50 nm;

the material of the hole transport layer comprises N, N '-diphenyl-N, N' - (1-naphthyl) -1,1 '-biphenyl-4, 4' -diamine; the thickness of the hole transport layer is 5 nm-50 nm;

the materials of the first electron blocking layer and the second electron blocking layer both comprise 4,4' -tris (carbazol-9-yl) triphenylamine; the thicknesses of the first electron blocking layer and the second electron blocking layer are both 5 nm-30 nm;

the first electron transport layer comprises two superposed structural layers, wherein one structural layer is made of 4,7-diphenyl-1,10-phenanthroline, and the other structural layer is made of a mixture of 4,7-diphenyl-1,10-phenanthroline and lithium; the thickness of the first electron transmission layer is 5 nm-50 nm;

the material of the second electron transport layer comprises 4,7-diphenyl-1, 10-phenanthroline; the thickness of the second electron transmission layer is 5 nm-50 nm.

The invention also provides an O L ED display, which comprises a TFT substrate, an O L ED device arranged on the TFT substrate, a packaging cover plate arranged above the O L ED device, and a packaging adhesive material arranged between the packaging cover plate and the O L ED device;

the O L ED device comprises an anode, a hole injection layer, a hole transport layer, a first light-emitting unit, a charge generation layer, a second light-emitting unit and a cathode which are sequentially arranged from bottom to top;

the first light-emitting unit comprises a first electron blocking layer, a first light-emitting layer and a first electron transmission layer which are sequentially arranged from bottom to top, and the second light-emitting unit comprises a second electron blocking layer, a second light-emitting layer and a second electron transmission layer which are sequentially arranged from bottom to top; the first light-emitting layer and the second light-emitting layer are both blue light-emitting layers; the charge generation layer comprises an electron generation layer and a hole generation layer which are arranged in sequence from bottom to top;

the packaging cover plate comprises a cover plate and a quantum dot film arranged on one side of the cover plate, which faces the O L ED device;

the quantum dot film comprises a red pixel unit, a green pixel unit and a blue pixel unit, wherein the red pixel unit is a red quantum dot film, the green pixel unit is a green quantum dot film, and the blue pixel unit is a transparent material or a through hole;

after voltage is applied, the O L ED device emits blue light, the blue light excites the red quantum dot film forming the red pixel unit to emit red light, the green quantum dot film forming the green pixel unit is excited to emit green light, and the green light penetrates through the blue pixel unit to transmit the blue light, so that the three primary colors of red, green and blue are displayed.

The material of the blue light emitting layer comprises 4,4' -bis (2,2) -distyryl-1, 1 biphenyl; the thickness of the first light-emitting layer is 5 nm-40 nm; the thickness of the second light-emitting layer is 5 nm-40 nm.

the material of the second electron transport layer comprises 4,7-diphenyl-1, 10-phenanthroline; the thickness of the second electron transmission layer is 5 nm-50 nm;

the red quantum dot comprises a first inner core and a first outer shell, wherein the first inner core is made of CdSe, and the first outer shell is made of ZnS; the green quantum dots comprise a second core and a second shell, the second core is made of CdSe, and the second shell is made of ZnS;

the thickness of the red quantum dot film is 10 nm-200 nm; the thickness of the green quantum dot film is 10 nm-200 nm.

The O L ED display comprises the O L ED device, the luminous intensity is multiplied by connecting the two or more luminous units in series, the luminous intensity is multiplied, the quantum dot film is favorably excited to emit red and green light, three primary colors of red, green and blue with high color saturation are obtained, the color gamut of the O L ED display is improved, and meanwhile, the luminous layers corresponding to red, green and blue pixels in the O L ED display are blue luminous layers, so that a precise metal mask plate is avoided, and the resolution of the O L ED display is favorably improved.

For a better understanding of the nature and technical aspects of the present invention, reference should be made to the following detailed description of the invention, taken in conjunction with the accompanying drawings, which are provided for purposes of illustration and description and are not intended to limit the invention.

Drawings

The technical solution and other advantages of the present invention will become apparent from the following detailed description of specific embodiments of the present invention, which is to be read in connection with the accompanying drawings.

In the drawings, there is shown in the drawings,

FIG. 1 is a schematic diagram of a conventional top-emitting blue O L ED device;

FIG. 2 is a schematic structural diagram of an O L ED device of the present invention;

FIG. 3 is a graph showing the comparison of the emission intensity of a stacked top-emitting blue O L ED device of the present invention with that of a conventional top-emitting blue O L ED device;

FIG. 4 is a schematic structural diagram of an O L ED display according to the present invention;

fig. 5 is a spectrum diagram of red, green and blue light emitted by an O L ED display according to the present invention.

Detailed Description

To further illustrate the technical means and effects of the present invention, the following detailed description is given with reference to the preferred embodiments of the present invention and the accompanying drawings.

Referring to fig. 2, the present invention first provides an O L ED device 120, which includes an anode 10, a hole injection layer 20, a hole transport layer 30, a first light emitting unit 40, a charge generation layer 50, a second light emitting unit 60, and a cathode 70, which are sequentially disposed from bottom to top;

the first light-emitting unit 40 includes a first electron blocking layer 41, a first light-emitting layer 42, and a first electron transport layer 43, which are sequentially disposed from bottom to top; the second light-emitting unit 60 comprises a second electron blocking layer 61, a second light-emitting layer 62 and a second electron transport layer 63 which are sequentially arranged from bottom to top; the charge generation layer 50 includes an electron generation layer 51 and a hole generation layer 52, which are sequentially disposed from bottom to top.

Specifically, the charge generation layer 50 is used to provide electrons or holes required for light emission to the first light emitting unit 40 and the second light emitting unit 60, respectively, so that the first light emitting unit 40 emits light under the action of the charge generation layer 50 and the anode 10, and the second light emitting unit 60 emits light under the action of the charge generation layer 50 and the cathode 70. That is, the charge generation layer 50 serially connects the first light emitting cell 40 and the second light emitting cell 60 between the anode 10 and the cathode 70, implementing a structure of a serial type organic light emitting diode, which can increase light emitting efficiency.

Specifically, the anode 10 is used to inject holes into the hole injection layer 20.

Specifically, the hole injection layer 20 is used to inject holes from the anode 10 into the hole transport layer 30.

Preferably, the material of the hole injection layer 20 includes hexanitrile Hexaazatriphenylene (HATCN), and the structural formula of the hexanitrile hexaazatriphenylene is shown in the specification

Specifically, the thickness of the hole injection layer 20 is 5nm to 50nm, preferably 10 nm.

Specifically, the hole transport layer 30 serves to transport holes into the first electron blocking layer 41 of the first light emitting unit 40.

Preferably, the material of the hole transport layer 30 includes N, N '-diphenyl-N, N' - (1-naphthyl) -1,1 '-biphenyl-4, 4' -diamine (N, N '-bis (phenyl-1-yl) -N, N' -bis (phenyl) benzidine, NPB), and the N, N '-diphenyl-N, N' - (1-naphthyl) -1,1 '-biphenyl-4, 4' -diamine has the structural formula

Specifically, the thickness of the hole transport layer 30 is 5nm to 50 nm.

Specifically, the first electron blocking layer 41 and the second electron blocking layer 61 serve to confine electrons in the first light emitting layer 42 and the second light emitting layer 62, respectively, and transport holes to the first light emitting layer 42 and the second light emitting layer 62.

Specifically, the materials of the first electron blocking layer 41 and the second electron blocking layer 61 both include 4,4',4 ″ -tris (carbazol-9-yl) triphenylamine (4, 4',4 ″ -tris (N-carbazolyl) triphenylamine, TCTA), and the structural formula of the 4,4',4 ″ -tris (carbazol-9-yl) triphenylamine is shown in the specification

Specifically, the thickness of the first electron blocking layer 41 is 5nm to 30nm, preferably 10 nm; the thickness of the second electron blocking layer 61 is 5nm to 30nm, preferably 10 nm.

Specifically, the first light-emitting layer 42 and the second light-emitting layer 62 are used to cause holes and electrons to recombine in the light-emitting layer and emit light.

Preferably, the first light-emitting layer 42 and the second light-emitting layer 62 are both blue light-emitting layers, the material of the blue light-emitting layer includes 4,4' -Bis (2,2) -distyryl-1, 1 biphenyl (4, 4' -Bis (2,2-diphenylvinyl) -1, 10-biphenol, DPVBi), and the structural formula of the 4,4' -Bis (2,2) -distyryl-1, 1 biphenyl is shown in the specification

Specifically, the thickness of the first light-emitting layer 42 is 5nm to 40nm, preferably 25 nm; the thickness of the second light-emitting layer 62 is 5nm to 40nm, preferably 25 nm.

Specifically, the first electron transport layer 43 serves to transport electrons injected from the charge generation layer 50 into the first light emitting layer 42, and the second electron transport layer 63 serves to transport electrons injected from the cathode 70 into the second light emitting layer 62.

Specifically, the first electron transport layer 43 includes two overlapped structural layers, wherein a material of one structural layer includes 4,7-diphenyl-1,10-phenanthroline (4,7-diphenyl-1,10-phenanthroline, Bphen), a material of the other structural layer includes a mixture of 4,7-diphenyl-1,10-phenanthroline (Bphen) and lithium (L i), a thickness of each of the two structural layers is preferably 10nm, and a structural formula of the 4,7-diphenyl-1,10-phenanthroline is 10nm

Specifically, the thickness of the first electron transport layer 43 is 5nm to 50nm, preferably 20 nm.

Specifically, the material of the second electron transport layer 63 includes 4,7-diphenyl-1,10-phenanthroline (Bphen).

Specifically, the thickness of the second electron transport layer 63 is 5nm to 50nm, preferably 20 nm.

Specifically, the electron generation layer 51 serves to generate electrons and inject the electrons into the first electron transport layer 43 of the first light emitting unit 40, and the hole generation layer 52 serves to generate holes and inject the holes into the second electron blocking layer 61 of the second light emitting unit 60.

Specifically, the material of the electron generation layer 51 includes hexanitrile Hexaazatriphenylene (HATCN); the material of the hole generation layer 52 includes N, N '-diphenyl-N, N' - (1-naphthyl) -1,1 '-biphenyl-4, 4' -diamine (NPB).

Specifically, the thickness of the electron generation layer 51 is 5nm to 50nm, preferably 10 nm; the film thickness of the hole generation layer 52 is 5nm to 50nm, preferably 10 nm.

Specifically, the cathode 70 is used to inject electrons into the second electron transport layer 63.

Preferably, the anode 10 is a fully reflective anode and the cathode 70 is a semi-transparent cathode, such that the O L ED device of the present invention constitutes a top-emitting O L ED device.

Preferably, the anode 10 is a composite layer formed by two Indium Tin Oxide (ITO) layers sandwiching a metal layer; the thickness of the indium tin oxide layer is 5 nm-50 nm, preferably 15 nm; the thickness of the metal layer is 80 nm-1000 nm, preferably 150 nm; the material of the metal layer may be silver (Ag) or aluminum (Al).

Specifically, the material of the cathode 70 is typically a low work function metal material, such as a combination including one or more of lithium (L i), lithium alloy, magnesium (Mg), magnesium alloy, calcium (Ca), calcium alloy, strontium (Sr), strontium alloy, lanthanum (L a), lanthanum alloy, cerium (Ce), cerium alloy, europium (Eu), europium alloy, ytterbium (Yb), ytterbium alloy, aluminum (Al), aluminum alloy, cesium (Cs), cesium alloy, rubidium (Rb), and rubidium alloy, preferably, the cathode 70 has a thickness of 5nm to 30 nm.

Preferably, the cathode 70 is a composite film formed by stacking a magnesium layer and a silver layer, the thickness of the magnesium layer is preferably 2nm, and the thickness of the silver layer is preferably 15 nm.

Preferably, the cathode 70 is formed by a vacuum deposition method.

When the first light-emitting layer 42 and the second light-emitting layer 62 in fig. 2 are both blue light-emitting layers, the anode 10 is a total reflection anode, and the cathode 70 is a semitransparent cathode, the O L ED device of the present invention constitutes a stacked top-emission blue light O L ED device, and the light-emitting intensities of the stacked top-emission blue light O L ED device of the present invention and the ordinary top-emission blue light O L ED device shown in fig. 1 are compared under the same current density, and the obtained result is shown in fig. 3, and it can be seen from fig. 3 that the light-emitting intensity of the stacked top-emission blue light O L ED device of the present invention is more than 1 time higher than that of the existing ordinary top-emission blue light O L ED device.

The O L ED device can multiply the luminous intensity of the O L ED device by connecting two or more luminous units in series, which is beneficial to improving the display effect of an O L ED display.

Referring to fig. 4 and fig. 2, the present invention further provides an O L ED display, including a TFT substrate 110, an O L ED device 120 disposed on the TFT substrate 110, a package cover 130 disposed over the O L ED device 120, and a package adhesive 150 disposed between the package cover 130 and the O L ED device 120;

as shown in fig. 2, the O L ED device 120 includes an anode 10, a hole injection layer 20, a hole transport layer 30, a first light emitting unit 40, a charge generation layer 50, a second light emitting unit 60, and a cathode 70, which are sequentially disposed from bottom to top;

the first light-emitting unit 40 includes a first electron blocking layer 41, a first light-emitting layer 42, and a first electron transport layer 43, which are sequentially disposed from bottom to top, and the second light-emitting unit 60 includes a second electron blocking layer 61, a second light-emitting layer 62, and a second electron transport layer 63, which are sequentially disposed from bottom to top; the first light-emitting layer 42 and the second light-emitting layer 62 are both blue light-emitting layers; the charge generation layer 50 comprises an electron generation layer 51 and a hole generation layer 52 which are arranged in sequence from bottom to top;

the package cover 130 includes a cover 131 and a quantum dot film 140 disposed on the cover 131 and facing the O L ED device 120;

the quantum dot film 140 includes a red pixel unit 141, a green pixel unit 142, and a blue pixel unit 143, the red pixel unit 141 is a red quantum dot film, the green pixel unit 142 is a green quantum dot film, and the blue pixel unit 143 is a transparent material or a through hole;

after a voltage is applied, the O L ED device 120 emits blue light, which excites the red quantum dot film constituting the red pixel unit 141 to emit red light, excites the green quantum dot film constituting the green pixel unit 142 to emit green light, and transmits the blue light through the blue pixel unit 143, thereby implementing three primary colors of red, green and blue.

Specifically, the encapsulant 150 is used to bond the encapsulant cover 130 and the O L ED device 120, so that the encapsulant cover 130 forms a hermetic protection for the O L ED device 120, and prevents water and oxygen from attacking the O L ED device 120.

Specifically, the red quantum dot comprises a first core and a first shell, the first core is made of cadmium selenide (CdSe), and the first shell is made of zinc sulfide (ZnS); the green quantum dots comprise a second core and a second shell, the second core is made of CdSe, and the second shell is made of ZnS.

Specifically, the thickness of the red quantum dot thin film is 10nm to 200nm, and preferably 30 nm.

Specifically, the thickness of the green quantum dot thin film is 10nm to 200nm, and preferably 30 nm.

Preferably, the material of the hole injection layer 20 includes hexanitrile Hexaazatriphenylene (HATCN).

Specifically, the thickness of the hole transport layer 30 is 5nm to 50 nm.

Preferably, the material of the hole transport layer 30 includes N, N '-diphenyl-N, N' - (1-naphthyl) -1,1 '-biphenyl-4, 4' -diamine (NPB).

Specifically, the materials of the first electron blocking layer 41 and the second electron blocking layer 61 both include 4,4',4 ″ -tris (carbazol-9-yl) triphenylamine (TCTA).

Specifically, the material of the blue light emitting layer includes 4,4' -bis (2,2) -distyryl-1, 1 biphenyl (DPVBi).

Specifically, the first electron transport layer 43 includes two overlapped structural layers, wherein a material of one structural layer includes 4,7-diphenyl-1,10-phenanthroline, a material of the other structural layer includes a mixture of 4,7-diphenyl-1,10-phenanthroline (Bphen) and lithium (L i), and thicknesses of the two structural layers are preferably 10 nm.

Specifically, the thickness of the electron generation layer 51 is 5nm to 50nm, and the thickness of the hole generation layer 52 is 5nm to 50 nm.

Specifically, the anode 10 is a total reflection anode, and the cathode 70 is a semitransparent cathode, so that the O L ED device constitutes a top emission O L ED device.

Preferably, the anode 10 is a composite layer formed by two indium tin oxide layers and a metal layer sandwiched therebetween; the thickness of the indium tin oxide layer is 5 nm-50 nm, preferably 15 nm; the thickness of the metal layer is 80 nm-1000 nm, preferably 150 nm; the material of the metal layer may be silver or aluminum.

Specifically, the material of the cathode 70 is typically a low work function metal material, such as a combination including one or more of lithium, lithium alloy, magnesium alloy, calcium alloy, strontium alloy, lanthanum alloy, cerium alloy, europium alloy, ytterbium alloy, aluminum alloy, cesium alloy, rubidium, and rubidium alloy. Preferably, the cathode 70 has a thickness of 5nm to 30 nm.

Preferably, the cathode 70 is formed by a vacuum deposition method.

As shown in fig. 5, which is a spectrum diagram of three primary colors of red, green and blue emitted by the O L ED display of the present invention, in a color coordinate system, the color coordinates of the three primary colors of red, green and blue are respectively red (0.70, 0.30), green (0.15, 0.76) and blue (0.12, 0.08), it can be seen that the three primary colors of red, green and blue emitted by the O L ED display of the present invention have high color saturation, and the color gamut of the O L ED display of the present invention is as high as 122.6%.

According to the O L ED display, the O L ED device can multiply increase the luminous intensity of the O L ED device by connecting two or more luminous units in series, so that the quantum dot film can be excited to emit red and green light, the red, green and blue primary colors of high color saturation can be obtained, and the color gamut of the O L ED display is improved.

In summary, the invention provides an O L ED device and an O L ED display, the O L ED device can multiply increase the luminous intensity of the O L ED device by connecting two or more luminous units in series, and is beneficial to improving the display effect of the O L ED display, the O L ED display comprises the O L ED device, the luminous intensity is multiplied by connecting two or more luminous units in series, so that the quantum dot film can be excited to emit red and green light, the red, green and blue three primary colors of light with high color saturation can be obtained, the color gamut of the O L ED display is improved, and meanwhile, as the luminous layers corresponding to red, green and blue pixels in the O L ED display are blue luminous layers, the use of a precise metal mask plate is avoided, and the resolution of the O L ED display is improved.

As described above, it will be apparent to those skilled in the art that other various changes and modifications may be made based on the technical solution and concept of the present invention, and all such changes and modifications are intended to fall within the scope of the appended claims.

Claims

1. An O L ED device is characterized by comprising an anode (10), a hole injection layer (20), a hole transport layer (30), a first light-emitting unit (40), a charge generation layer (50), a second light-emitting unit (60) and a cathode (70) which are arranged in sequence from bottom to top;

the first light-emitting unit (40) comprises a first electron blocking layer (41), a first light-emitting layer (42) and a first electron transport layer (43) which are sequentially arranged from bottom to top, and the second light-emitting unit (60) comprises a second electron blocking layer (61), a second light-emitting layer (62) and a second electron transport layer (63) which are sequentially arranged from bottom to top;

the charge generation layer (50) comprises an electron generation layer (51) and a hole generation layer (52) which are arranged in sequence from bottom to top;

the materials of the first electron blocking layer (41) and the second electron blocking layer (61) both comprise 4,4' -tris (carbazol-9-yl) triphenylamine; the thicknesses of the first electron blocking layer (41) and the second electron blocking layer (61) are both 5 nm-30 nm;

the first light-emitting layer (42) and the second light-emitting layer (62) are both blue light-emitting layers;

the first electron transport layer (43) comprises two overlapped structural layers, wherein one structural layer is made of 4,7-diphenyl-1,10-phenanthroline, and the other structural layer is made of a mixture of 4,7-diphenyl-1,10-phenanthroline and lithium;

the material of the blue light emitting layer comprises 4,4' -bis (2,2) -distyryl-1, 1 biphenyl; the thickness of the first light-emitting layer (42) is 5 nm-40 nm; the thickness of the second light-emitting layer (62) is 5 nm-40 nm;

the anode (10) is a total reflection anode, and the cathode (70) is a semitransparent cathode;

the anode (10) is a composite layer formed by two indium tin oxide layers and a metal layer; the thickness of the indium tin oxide layer is 5 nm-50 nm; the thickness of the metal layer is 80 nm-1000 nm;

the cathode (70) is a composite film formed by overlapping a magnesium layer and a silver layer; the thickness of the cathode (70) is 5 nm-30 nm.

2. The O L ED device according to claim 1, wherein the material of the electron generation layer (51) comprises hexanitrile hexaazatriphenylene, the material of the hole generation layer (52) comprises N, N '-diphenyl-N, N' - (1-naphthyl) -1,1 '-biphenyl-4, 4' -diamine, the film thickness of the electron generation layer (51) is 5nm to 50nm, and the film thickness of the hole generation layer (52) is 5nm to 50 nm.

3. The O L ED device according to claim 1, wherein the hole injection layer (20) comprises hexanitrile hexaazatriphenylene, the hole injection layer (20) has a thickness of 5nm to 50 nm;

the material of the hole transport layer (30) comprises N, N '-diphenyl-N, N' - (1-naphthyl) -1,1 '-biphenyl-4, 4' -diamine; the thickness of the hole transport layer (30) is 5 nm-50 nm;

the thickness of the first electron transport layer (43) is 5 nm-50 nm;

the material of the second electron transport layer (63) comprises 4,7-diphenyl-1, 10-phenanthroline; the thickness of the second electron transport layer (63) is 5nm to 50 nm.

4. An O L ED display, comprising a TFT substrate (110), an O L ED device (120) disposed on the TFT substrate (110), a package cover plate (130) disposed over the O L ED device (120), and a package adhesive (150) disposed between the package cover plate (130) and the O L ED device (120);

the O L ED device (120) comprises an anode (10), a hole injection layer (20), a hole transport layer (30), a first light-emitting unit (40), a charge generation layer (50), a second light-emitting unit (60) and a cathode (70) which are sequentially arranged from bottom to top;

the first light-emitting unit (40) comprises a first electron blocking layer (41), a first light-emitting layer (42) and a first electron transport layer (43) which are sequentially arranged from bottom to top, and the second light-emitting unit (60) comprises a second electron blocking layer (61), a second light-emitting layer (62) and a second electron transport layer (63) which are sequentially arranged from bottom to top; the first light-emitting layer (42) and the second light-emitting layer (62) are both blue light-emitting layers; the charge generation layer (50) comprises an electron generation layer (51) and a hole generation layer (52) which are arranged in sequence from bottom to top;

the package cover plate (130) comprises a cover plate (131) and a quantum dot film (140) arranged on one side of the cover plate (131) facing the O L ED device (120);

the quantum dot thin film (140) comprises a red pixel unit (141), a green pixel unit (142) and a blue pixel unit (143), wherein the red pixel unit (141) is a red quantum dot thin film, the green pixel unit (142) is a green quantum dot thin film, and the blue pixel unit (143) is a transparent material or a through hole;

after voltage is applied, the O L ED device (120) emits blue light, the blue light excites the red quantum dot film forming the red pixel unit (141) to emit red light, excites the green quantum dot film forming the green pixel unit (142) to emit green light, and the blue light penetrates through the blue pixel unit (143) to transmit blue light, so that the three primary colors of red, green and blue are displayed;

5. The O L ED display of claim 4, wherein the material of the electron generation layer (51) comprises hexanitrile hexaazatriphenylene, the material of the hole generation layer (52) comprises N, N '-diphenyl-N, N' - (1-naphthyl) -1,1 '-biphenyl-4, 4' -diamine, the film thickness of the electron generation layer (51) is 5nm to 50nm, and the film thickness of the hole generation layer (52) is 5nm to 50 nm.

6. The O L ED display according to claim 4, wherein the hole injection layer (20) comprises hexanitrile hexaazatriphenylene, the hole injection layer (20) has a thickness of 5nm to 50 nm;

the thickness of the first electron transport layer (43) is 5 nm-50 nm;

the material of the second electron transport layer (63) comprises 4,7-diphenyl-1, 10-phenanthroline; the thickness of the second electron transmission layer (63) is 5 nm-50 nm;