CN113540303A - Light emitting diode and manufacturing method thereof - Google Patents
Light emitting diode and manufacturing method thereof Download PDFInfo
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- CN113540303A CN113540303A CN202110759977.1A CN202110759977A CN113540303A CN 113540303 A CN113540303 A CN 113540303A CN 202110759977 A CN202110759977 A CN 202110759977A CN 113540303 A CN113540303 A CN 113540303A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
- H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/40—Materials therefor
- H01L33/405—Reflective materials
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0016—Processes relating to electrodes
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- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a light-emitting diode, which comprises a first electrode connected with a first semiconductor layer, a second electrode connected with a second semiconductor layer, wherein the first electrode and/or the second electrode sequentially comprise a first reflecting layer, a connecting cushion layer and a second reflecting layer at least partially covering the connecting cushion layer, the material of the second reflecting layer comprises rhodium, platinum or ruthenium, and the first reflecting layer and the second reflecting layer manufacture a large-angle electrode structure through good stress characteristics, so that the photoelectric characteristics of the light-emitting diode are favorably improved, and the reliability of a product is improved.
Description
Technical Field
The present invention relates to the field of semiconductor manufacturing, and more particularly to a light emitting diode with a highly reliable electrode.
Background
Referring to fig. 1, in the conventional design of the electrode structure of the LED chip, a high-reflectivity material is added to the electrode structure as a reflective layer 200 to improve the light efficiency in consideration of the light extraction efficiency, but most of the high-reflectivity materials: for example, silver, aluminum, etc., whose characteristics are susceptible to environmental, temperature, humidity, ph value, etc. to reduce the product stability, are covered with a metal protection layer 230 with low mobility for protection, but this design only can prolong the reaction time of the reflective layer material and the environment, and cannot completely avoid the serious abnormalities of metal material migration or precipitation and electrode falling off, which leads to the abnormal operation of the terminal product module, and therefore the electrode structure design will limit the product design and application fields, such as high current and high voltage driving, extreme environment, etc.
Disclosure of Invention
The invention provides a feasible solution to the problems of the background art, and an electrode design with high reliability is constructed by stabilizing metal rhodium, ruthenium or platinum and adopting a double-reflection-layer structure.
In a first embodiment provided by the present invention, a light emitting diode is disclosed, comprising:
the substrate, for example a positive product, includes a substrate with a series of protrusions on the surface, including a protrusion without a fixed slope, for example, manufactured by dry etching, or a protrusion with a certain slope, for example, manufactured by wet etching, and an epitaxial light emitting layer, for example, a gallium nitride-based epitaxial material, on the substrate, the epitaxial light emitting layer includes a first semiconductor layer, a second semiconductor layer and an active layer therebetween, the first semiconductor layer, the second semiconductor layer and the active layer are covered on the substrate, and the substrate can be thinned or removed in the process.
The first electrode is connected to the first semiconductor layer, the second electrode is connected to the second semiconductor layer, the first semiconductor layer can be set to be N-polar, the second semiconductor layer can be P-polar, and polarity change is achieved through different doping components.
The first electrode and/or the second electrode comprise a first reflecting layer which can be directly in contact with the epitaxial luminous layer, a bonding pad layer for wire bonding or bonding and a second reflecting layer at least partially covering the bonding pad layer, the reflectivity of the first reflecting layer and/or the second reflecting layer is not less than 20 percent, preferably not less than 45 percent, the material of the first reflecting layer and/or the material of the second reflecting layer can comprise rhodium, platinum and ruthenium, or an alloy of at least one of the above metals, or a co-plated material of at least one of the above metals, the proportion of the above metals in the alloy exceeds 50 percent, the second reflecting layer formed by the materials has high mechanical strength and stability, the capability of resisting scratch and crush injury of the electrode can be improved, particularly, the ruthenium has higher Mohs hardness value, the surface of the second reflecting layer can be plated with silicon oxide, silicon nitride, aluminum oxide, aluminum nitride, niobium oxide, silicon nitride, Insulating protective layers such as titanium oxide or titanium nitride to the gold material that the pad layer adopted usually is taken as the example, and the adhesion of second reflecting layer to silica or alumina is better, is favorable to promoting insulating protective layer's barrier propterty, and first reflecting layer and second reflecting layer give consideration to improving electrode structure light extraction efficiency.
The first reflecting layer and/or the second reflecting layer of the material both have Young modulus not less than 150Gpa and bulk modulus not less than 200Gpa, for example, the material of the first reflecting layer and/or the second reflecting layer comprises rhodium, platinum or ruthenium, the two reflecting layers are attached from the upper side and the lower side of the connecting pad layer, the electrode structure has stronger stress characteristic, and the slope angle of the electrode structure can be increased; the invention uses the stress characteristic of the structural material to plate the film, the section of the first electrode and/or the second electrode is trapezoid, the included angle between the trapezoid side wall and the horizontal plane is 60-75 degrees, or 75-80 degrees, or more than 80 degrees, the existing electrode design is designed to prevent the increase of the included angle of the side wall and reduce the cladding property, so that the metal is easier to separate out, the existing electrode is usually designed to be 45-60 degrees, and the larger plating attachment angle is beneficial to improving the uniformity of the sectional area of the electrode in the vertical direction and improving the sectional area of the electrode, thereby reducing the current density, reducing the metal diffusion capability, increasing the structural heat dissipation, reducing the heat effect and reducing the driving voltage, thereby improving the product characteristic and the service life, or saving the cost by combining the adjustment of the electrode thickness.
According to the present invention, preferably, the first reflective layer is made of metal ruthenium with a mohs hardness of 6.5, so as to improve the anti-crush resistance of the electrode structure. Rhodium with a mohs hardness of 6 may also be selected for anti-crush problems. Platinum may also be selected as the first reflective layer material if only plating angle issues are considered.
In some embodiments of the present invention, platinum is used as the material of the first reflective layer, which has a large growth stress and is prone to warping and electrode detachment, so a stress adjustment layer is formed on platinum, and the film-forming stress direction of the stress adjustment layer is opposite to that of the first reflective layer. The contact layer, the first reflecting layer and the stress adjusting layer have the resistivity less than 130n omega m. The first reflective layer, the stress adjustment layer, and/or the second reflective layer have a reflectivity of 45% or more on average in a 400 nm to 700 nm band, and in some cases, the stress adjustment layer may be a composite reflective layer with the first reflective layer, collectively referred to as the first reflective layer.
In some embodiments of the present invention, the first reflective layer is a composite structure, and the first reflective layer includes a periodic stack of a reflective material and a stress adjusting material, wherein a film forming stress direction of the stress adjusting material is opposite to that of the reflective material, for example, the first reflective layer is a multi-period stack of a stress adjusting material titanium and a reflective material platinum.
In some embodiments of the present invention, an ultraviolet light emitting diode is provided, which has a light emitting wavelength of not more than 350 nm, rhodium, platinum and ruthenium are particularly suitable for an ultraviolet light emitting diode, particularly a deep ultraviolet light emitting diode, which has an oxidation promoting effect on aluminum or silver used for a conventional reflective electrode and a light absorbing effect on an ITO material used as a conventional electrode as a contact layer, and ITO and Al have poor adhesion, a low high-current operation function, and an aging characteristic voltage may increase.
According to the present invention, it is preferred that the chip size of the light emitting diode is not more than 250 micrometers by 250 micrometers, for example, the light emitting diode has a length from 2 micrometers to 100 micrometers or from 100 micrometers to 250 micrometers, and/or the light emitting diode has a width from 2 micrometers to 100 micrometers or from 100 micrometers to 250 micrometers, and the design of the present invention is suitable for a size where reflection loss is negligible for small-sized electrodes such as mini-led or micro-led, and the same applies to flip-chip light emitting diodes.
According to the invention, in some embodiments, the side of the second reflective layer remote from the bonding pad layer is covered with at least an insulating protective layer, and the adhesion of the second reflective layer to the insulating protective layer is greater than the adhesion of the bonding pad layer to the insulating protective layer.
In the embodiments, the material of the insulating protection layer includes silicon oxide, silicon nitride, aluminum oxide, aluminum nitride, titanium oxide, or titanium nitride.
According to the invention, the first reflective layer is preferably in contact with the pad layer, where contact means direct connection.
According to the invention, in some embodiments, a contact layer is provided between the epitaxial light emitting layer and the first reflective layer, the first reflective layer at least partially covers the contact layer, the material of the contact layer comprises chromium or an alloy of chromium and a transition metal, the first reflective layer covered on the contact layer has a strong effect of resisting metal migration of the contact layer, the first reflective layer has a mohs hardness of not less than 6.5, and preferably a metal with low mobility, the price advantage of ruthenium over titanium or rhodium is significant, and the resistivity is less than 100n Ω m.
According to the present invention, it is preferable that the first reflective layer and the second reflective layer are spaced apart from each other by 200 to 250 angstroms, or more than 250 angstroms, where the spacing refers to a minimum spacing, or to a spacing between the first reflective layer and the second reflective layer on the surface of the epitaxial light emitting layer.
According to the present invention, preferably, the thickness of the first reflective layer is not less than 500 angstroms, the first reflective layer has a high resistance to stress, the thickness of the second reflective layer is not less than 200 angstroms, and the first reflective layer and the second reflective layer having a certain thickness provide strength assurance and also function to adjust the angle of the electrode.
According to the present invention, in some embodiments, the light emitting wavelength of the light emitting diode is 350 nm to 400 nm, or 400 nm to 500 nm, or more than 500 nm.
According to the present invention, it is preferable that the light emitting diode is a forward mounted light emitting diode, a flip chip light emitting diode, or a vertical light emitting diode.
The invention also provides a manufacturing method of the light-emitting diode, which comprises the following steps:
(1) providing a growth substrate, the growth substrate including but not limited to sapphire, silicon nitride, glass, gallium nitride or gallium arsenide,
(2) a light emitting epitaxial layer is made on a growth substrate, the light emitting epitaxial layer can be a gallium nitride-based material,
(3) manufacturing a photoresist with an opening on the light-emitting epitaxial layer, and manufacturing a first electrode and/or a second electrode in the photoresist opening;
the first electrode and/or the second electrode sequentially comprises a first reflecting layer, a pad layer and a second reflecting layer from one side of the light-emitting epitaxial layer, wherein the first reflecting layer and/or the second reflecting layer is made of ruthenium, and the first reflecting layer and/or the second reflecting layer enlarges a photoresist opening by utilizing growth stress.
The cross section of the first electrode and/or the second electrode is trapezoidal, and the included angle between the side wall of the trapezoid and the horizontal plane is 60-75 degrees, or 75-80 degrees, or more than 80 degrees.
The beneficial effects of the invention at least comprise: by using the double-reflection layer material, the stress intensity between layers is improved, a large-angle electrode inclination angle is manufactured, the problem of reliability reduction caused by metal migration of the reflection layer is solved, the resistance characteristic is improved under a severe operation environment, and meanwhile, the high light extraction efficiency is considered.
Additional features and advantages of the invention will be set forth in the description which follows, and in part will be obvious from the description, or may be learned by practice of the invention. The objectives and other advantages of the invention will be realized and attained by the structure particularly pointed out in the written description and claims hereof as well as the appended drawings.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. Furthermore, the drawing figures are for a descriptive summary and are not drawn to scale.
FIG. 1 is a schematic partial cross-sectional view of a prior art LED chip;
fig. 2 is a schematic partial cross-sectional view of a light emitting diode chip according to a first embodiment;
fig. 3 is a schematic partial cross-sectional view of an electrode of a light emitting diode chip according to a fourth embodiment;
fig. 4 to 6 are schematic partial cross-sectional views of an electrode of a light emitting diode chip according to a fifth embodiment;
fig. 7 is a schematic partial cross-sectional view of an electrode of a light emitting diode chip according to a seventh embodiment.
Detailed Description
The following detailed description of the embodiments of the present invention will be provided with reference to the drawings and examples, so that how to apply the technical means to solve the technical problems and achieve the technical effects can be fully understood and implemented. It should be noted that, as long as there is no conflict, the embodiments and the features of the embodiments of the present invention may be combined with each other, and the technical solutions formed are within the scope of the present invention.
It is to be understood that the terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. It will be further understood that the terms "comprises" and/or "comprising," when used in this specification, specify the presence of stated features, integers, steps, components, and/or groups thereof, but do not preclude the presence or addition of one or more other features, integers, steps, components, and/or groups thereof.
Referring to fig. 2, in a first embodiment of the present invention, a light emitting diode with a forward mounting structure is taken as an example, and the light emitting diode comprises:
a substrate 500 for supporting the epitaxial light emitting layer 400, the substrate material may include but is not limited to sapphire, silicon nitride, glass, gallium nitride or gallium arsenide, in this embodiment, sapphire with a series of protrusions on its surface, including protrusions with no fixed slope, for example, formed by dry etching, or protrusions with a certain slope, for example, formed by wet etching, and the epitaxial light emitting layer 400, for example, gallium nitride-based epitaxial material, on the substrate, the epitaxial light emitting layer 400 includes a first semiconductor layer 410, a second semiconductor layer 420 and an active layer 430 therebetween, the first semiconductor layer 410 is connected to a first electrode, the second semiconductor layer is connected to a second electrode, the second electrode is shown as being located on the substrate, or not limited to the first electrode, and the first semiconductor layer 410 may be set to be N-polar, the second semiconductor layer 420 is P-polar, with polarity changes achieved by different doping compositions. The light emitting diode mainly excites light from one side of the second semiconductor layer 420.
The first electrode and/or the second electrode comprise a first reflecting layer 210 which can be directly used as a contact with the epitaxial light emitting layer 400, a bonding pad layer 300 used for wire bonding and electrically connected with an external power supply, and a second reflecting layer 220 at least partially covering the bonding pad layer, the material of the second reflecting layer 220 comprises rhodium, platinum or ruthenium, the second reflecting layer 220 formed by the materials has high mechanical strength and stability, the capability of resisting scratching and crushing of the electrode can be improved, the resistivity is low, the surface of the second reflecting layer 220 can be plated with insulating protective layers such as silicon dioxide or aluminum oxide, and the like, taking gold materials commonly adopted by the bonding pad layer 300 as an example, the second reflecting layer 220 has better adhesion to the silicon dioxide or the aluminum oxide, the protection performance of the insulating protective layer 220 is favorably improved, and the light extraction efficiency of the electrode structure is improved by taking the first reflecting layer 210 and the second reflecting layer 220 into consideration.
In some example structures of the first embodiment, the material of the first reflective layer 210 includes rhodium, platinum or ruthenium, the lower electrode potential, the lower resistivity of the materials, the first reflective layer 210 and the second reflective layer 220 of the materials each having a Young's modulus (Young's modulus) of not less than 150Gpa and a Bulk modulus (Bulk modulus) of not less than 200Gpa, and the Bulk modulus, the Shear modulus (Shear modulus) and the Young's modulus may be scaled by Poisson ratio (Poisson ratio). The two reflective layers are attached from the upper side and the lower side of the pad layer 300, the electrode structure has stronger stress characteristic, the slope angle of the electrode structure can be increased, and the first reflective layer 210 is in contact with the pad layer 300, wherein the contact refers to direct connection; the invention uses the stress characteristic of the structural material to support the yellow pattern after the film layer is plated, and increases the plating angle and the cladding width, the section of the first electrode and/or the second electrode is trapezoid, the included angle alpha between the trapezoid side wall and the horizontal plane is 60-75 degrees, or 75-80 degrees, or more than 80 degrees, the existing electrode design aims at preventing the increase of the included angle of the side wall and reducing the cladding, so that the metal is easier to separate out, the design is usually 45-60 degrees, the larger plating angle is favorable for improving the uniformity of the sectional area of the electrode in the vertical direction, and the sectional area of the electrode is improved, thereby reducing the current density, reducing the metal diffusion capacity, increasing the structural heat dissipation, reducing the heat effect and reducing the driving voltage, thereby improving the product characteristic and the service life, or combining the adjustment of the electrode thickness to save the cost, the thickness here refers to the thickness of the electrode pad layer is adjustable, and the voltage requirement can be reduced from 2.7um to 2.0um, and the voltage requirement can be reduced from 1.5um to 1.2um for small-sized display screen products, for example, because of the large-angle electrode design of this embodiment, the voltage can be maintained unchanged.
In the second embodiment of the present invention, the light emitting wavelength of the led is not more than 350 nm, platinum and ruthenium are particularly suitable for uv leds, particularly deep uv leds, which have an oxidation promoting effect on aluminum or silver used as a conventional reflective electrode and a light absorbing effect on ITO material used as a conventional electrode as a contact layer, and ITO and Al have poor adhesion, low high current operation function, and increased aging characteristic voltage.
In a third embodiment of the present invention, which differs from embodiment 1 mainly in that the chip size of the provided light emitting diode is not more than 250 micrometers by 250 micrometers, for example, the light emitting diode has a length from 2 micrometers to 100 micrometers or from 100 micrometers to 250 micrometers, and/or the light emitting diode has a width from 2 micrometers to 100 micrometers or from 100 micrometers to 250 micrometers, the design of the present reflective layer is suitable for a size where the reflection loss of small-sized electrodes such as mini-led or micro-led is negligible, and the same applies to flip-chip light emitting diodes.
Referring to fig. 3, in the fourth embodiment of the present invention, the difference from the above-mentioned embodiments is that the side of the second reflective layer 220 away from the pad layer 300 is at least covered with an insulating protection layer 600, the material of the insulating protection layer 600 includes silicon oxide, silicon nitride, aluminum oxide, aluminum nitride, titanium oxide or titanium nitride, and the second reflective layer 220 has better adhesion to the material of the insulating protection layer 600 than the pad layer 300.
Referring to fig. 4, in a fifth embodiment of the present invention, the difference from the above embodiments is that a contact layer 100 is provided between an epitaxial light emitting layer 400 and a first reflective layer 210, the first reflective layer 210 at least partially covers the contact layer 100, and the material of the contact layer 100 includes chromium or an alloy of chromium and a transition metal, for example, an alloy can be made of chromium and platinum, and the alloy can be made by co-plating or annealing.
Referring to fig. 5a and 5b, it is noted that in the conventional process, a yellow light process is usually adopted when fabricating an electrode, and it is not desirable that the opening of the photoresist 700 in the yellow light process is too large to result in unnecessary increase of the electrode, and brightness loss caused by light absorption of the electrode is enlarged, in which the arrow indicates a metal plating direction, when fabricating an electrode by metal plating on a photoresist with a small opening, it is difficult to reserve a space for complete coating of a metal diffusion barrier layer (i.e., the second reflective layer in fig. 6 a), and the existing metal film layer 800 covers the photoresist 700 more smoothly.
Referring to fig. 5c and 5d, in this embodiment, the second reflective layer 220 in fig. 6b is made of rhodium, platinum, or ruthenium or other materials with Young's modulus (Young's modulus) and bulk modulus (bulk modulus) close to or higher than that of ruthenium, for example, a material with Young's modulus greater than 150Gpa and bulk modulus greater than 200Gpa, and more preferably, Young's modulus greater than 300Gpa, such as rhodium and ruthenium, in the process of plating, the metal film plated on the surface of the photoresist 700 has stronger stress to expand the opening of the photoresist 700, so as to obtain more space to fabricate and cover the second reflective layer 220 outside the pad layer 300, thereby improving the anti-migration capability of the electrode, and considering the smaller initial opening, and the size of the electrode is controllable. Preferably, the thickness of the second reflective layer 220 is not less than 200 angstroms, and a certain thickness is favorable for improving the stress characteristic, and similarly, the first reflective layer 210 may also be made of the material under the above-mentioned high stress condition, which is favorable for forming the electrode sidewall with a large angle.
Comparing fig. 6a and fig. 6b, the conventional electrode process is obviously different from the electrode structure manufactured in this embodiment, so the conventional process usually utilizes a bevel electrode with a small angle, for example, a design with an angle of 45 ° to 60 ° to overcome the above problem, and the small angle electrode structure increases the resistance of the electrode and reduces the heat dissipation capability of the electrode due to the large change of the electrode cross-sectional area. In this embodiment, the contact layer 100 is fabricated by first fabricating the photoresist 700 with a small opening and a large angle, and then fabricating the metal migration resistant layer by fabricating a metal with high stress and low migration, for example, the metal ruthenium is coated on the surface of the contact layer 100 not in contact with the epitaxial light emitting layer 400, because the metal ruthenium is also coated on the photoresist 700, the edge of the opening of the photoresist is tilted by the stress of the metal ruthenium film layer, thereby enlarging the opening area, therefore, the electrode of this embodiment can be fabricated into a structure with a large angle, reducing the working voltage, and improving the heat dissipation capability of the light emitting diode, the design also requires that the metal film layer with large stress has sufficient thickness, for example, the thickness of the first reflective layer is not less than 500 angstroms, and the thickness of the second reflective layer is not less than 200 angstroms.
Referring to fig. 6b, in the sixth embodiment of the present invention, since the stress condition of the first and second reflective layers 210 and 220 is excellent, the distance between the first and second reflective layers may be set to be 200 to 250 angstroms, or 250 angstroms or more, where the distance refers to a minimum distance, or refers to a distance between the first and second reflective layers on the surface of the epitaxial light emitting layer. Has better contact metal migration prevention characteristics, such as metal migration prevention of the contact layer 100. The thickness of the first reflective layer 210 is not less than 500 angstroms, and the thickness of the second reflective layer 220 is not less than 200 angstroms. According to experimental tests, after being sieved at 480 ℃ for 1 hour, the light-emitting diode of the embodiment has no obvious metal precipitation. In the saline test, the led of this example had no abnormality for 240 hours.
Referring to fig. 7, in a seventh embodiment of the present invention, chromium is used as a material of the contact layer 100, wherein the thickness of chromium is 25 to 50 angstroms, platinum is covered on chromium, the thickness of platinum may be more than 800 angstroms, an alloy of platinum and chromium may also be used as the contact layer 100 and the first reflective layer 210, platinum is used as a material of the first reflective layer 210, the growth stress of platinum is large, and the situation of lift-up and electrode detachment easily occurs, so a stress adjustment layer 900 is fabricated on platinum, the film forming stress direction of the stress adjustment layer 900 is opposite to that of the first reflective layer 210, in this embodiment, the material of the stress adjustment layer 900 is ruthenium or rhodium, taking ruthenium as an example, for stress matching, the thickness of the stress adjustment layer 900 is 65% to 75% of the thickness of the first reflective layer 210, wherein the stress of platinum pulling downward and the film stress of ruthenium pulling upward are matched, and the stress adjustment layer 900 is also compatible with the light-out effect, the light reflectivity of more than 45% in the wave band from 250 nanometers to 850 nanometers has the advantages of enhancing the design of the product and reducing the risk of electrode dropping of the product.
In some implementations of this embodiment, the first reflective layer 210 can include a periodic stack of a reflective material and a stress adjusting material having a film stress direction opposite to that of the reflective material, for example, the first reflective layer 210 is a multi-period stack of a stress adjusting material titanium and a reflective material platinum.
In an eighth embodiment of the present invention, in addition to embodiment 7, a material having a mohs hardness of not less than 6, such as ruthenium or rhodium, is used as the second reflective layer 220, and the stress adjustment layer 900 having a mohs hardness of not less than 6 is combined, and meanwhile, the thickness of the stress adjustment layer 900 is not less than 500 angstroms, and the thickness of the second reflective layer 220 is not less than 200 angstroms, so that the shape of the pad layer 300 is stably fixed from both sides, and the ability of resisting electrode crush is provided.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and improvements can be made without departing from the principle of the present invention, and these modifications and improvements should also be considered as the protection scope of the present invention.
Claims (10)
1. A light emitting diode, comprising:
an epitaxial light-emitting layer including a first semiconductor layer, a second semiconductor layer, and an active layer therebetween, a first electrode connected to the first semiconductor layer, a second electrode connected to the second semiconductor layer,
the first electrode and/or the second electrode sequentially comprise a first reflecting layer and a bonding pad layer for routing or bonding, wherein the first reflecting layer is coated with a stress adjusting layer, and the film forming stress direction of the stress adjusting layer is opposite to that of the first reflecting layer.
2. The light-emitting diode of claim 1, wherein the material of the first reflective layer comprises rhodium, platinum or ruthenium.
3. The led of claim 1, wherein the stress adjustment layer is 65% to 75% of the thickness of the first reflective layer.
4. The light-emitting diode of claim 1, wherein the first reflective layer is made of platinum and the stress adjusting layer is made of ruthenium or rhodium.
5. The light-emitting diode of claim 1, wherein the first reflective layer has a thickness of not less than 500 angstroms.
6. The light-emitting diode according to claim 1, wherein the first electrode and/or the second electrode has a trapezoidal cross section, and the included angle between the trapezoidal sidewall and the horizontal plane is 60 ° to 75 °, or 75 ° to 80 °, or more than 80 °.
7. The light-emitting diode of claim 1, wherein the first reflective layer is a composite structure comprising a periodic stack of reflective material and stress adjusting material.
8. A light emitting diode according to claim 1 wherein the light emitting diode has a length of from 2 microns to 100 microns or from 100 microns to 250 microns.
9. A light emitting diode according to claim 1 wherein the light emitting diode has a width of from 2 microns to 100 microns or from 100 microns to 250 microns.
10. A light-emitting diode according to claim 1, wherein a contact layer is provided between the epitaxial light-emitting layer and the first reflective layer, the first reflective layer at least partially covering the contact layer, the contact layer comprising a material comprising chromium or an alloy of chromium and a transition metal.
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| CN112820808A (en) * | 2021-01-05 | 2021-05-18 | 华灿光电(苏州）有限公司 | Light-emitting diode chip preparation method and light-emitting diode chip |
| CN113571622B (en) * | 2021-07-22 | 2022-08-23 | 厦门三安光电有限公司 | Light emitting diode and method for manufacturing the same |
| CN115458657A (en) * | 2022-10-08 | 2022-12-09 | 福建兆元光电有限公司 | LED electrode and preparation method thereof |
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| CN111048642B (en) | 2021-07-30 |
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