CN113539769B - Electron beam imaging equipment for realizing coaxiality and realization method - Google Patents
Electron beam imaging equipment for realizing coaxiality and realization method Download PDFInfo
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- CN113539769B CN113539769B CN202110810762.8A CN202110810762A CN113539769B CN 113539769 B CN113539769 B CN 113539769B CN 202110810762 A CN202110810762 A CN 202110810762A CN 113539769 B CN113539769 B CN 113539769B
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- H—ELECTRICITY
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- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
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Abstract
The invention provides an electron beam imaging device for realizing coaxiality and a realizing method thereof, wherein the electron beam imaging device comprises an electron source, a light source and a light source, wherein the electron source is used for emitting a main electron beam; a condenser lens for adjusting a beam angle, that is, converging an electron beam emitted from the electron source; the limiting film hole is used for limiting stray electrons and beam current; an objective lens for focusing an incident primary electron beam onto a sample surface; a detector for collecting electrons to form an image via photoelectric conversion; the workbench is used for bearing a sample and movably positioning the area to be detected below the optical axis; and the optical microscope is used for imaging and positioning the area to be measured and associating the position corresponding to the electron optical axis. The invention is provided with a refraction surface, an object space optical path of the optical microscope is guided into an electron optical path to realize coaxiality or parallelism, meanwhile, the refraction surface becomes a bombardment target surface of signal electrons excited by the surface of a sample, the bombardment target surface is received and detected by a secondary electron detector or an annular detector, and the position of the optical microscope is adjusted according to a detection result to realize parallel in-situ imaging or sequential imaging.
Description
Technical Field
The invention relates to the technical field of electron beam imaging, in particular to electron beam imaging equipment for realizing coaxiality and a realizing method.
Background
Industrial or laboratory electron beam imaging devices for inspection or measurement, such as High Throughput (High Throughput) microscopes, measurement microscopes (CDSEM), electron beam defect inspection devices, etc., all require the introduction of optical microscopes to provide coarse positioning of the area of the sample to be inspected or to establish local coordinate systems to provide position indices for subsequent electron beam imaging.
The patent publication No. CN106645250A discloses a scanning transmission electron microscope with an optical imaging function, which realizes synchronous optical observation and SEM observation and can rapidly switch between the optical observation and STEM observation.
In the prior art, due to the limitation of principle and implementation, the optical microscope and the optical microscope are usually used as two independent components and exist in the system at a certain distance (the optical axes are not coincident), which requires a large stroke of the sample stage to meet the requirement of position switching; another disadvantage is that this approach does not allow for real-time co-location display or imaging. As shown in fig. 1, an electronic imaging device for detection or measurement generally includes: an electron source 101 providing a primary electron beam 1001 emitted along an electron-optical axis; a condenser lens 102 for condensing a primary electron beam 1001 emitted from the electron source and adjusting an angle of beam spread; a limiting film hole 103 for limiting stray electrons and beam current; an objective lens 106 that focuses the incident primary electron beam 1001 onto the surface of the sample 108; a deflector 105 for realizing raster scanning of the focused electron beam on the surface of the sample; a detector 104 for collecting signal electrons (secondary electrons and backscattered electrons) excited by the primary electron beam bombarding the surface of the sample; the workpiece table 109 has displacement functions in the X and Y directions, and is used for bearing a sample and moving and positioning the region to be measured below the optical axis; the optical microscope 110 images and positions the region to be measured, and associates the position with the electron optical axis.
Disclosure of Invention
The invention aims to solve the defects of the prior art and provides an electron beam imaging device realizing coaxiality and a realizing method.
The invention provides the following technical scheme:
an electron beam imaging apparatus implementing coaxiality, comprising:
an electron source for emitting a primary electron beam;
a condenser lens for adjusting a beam angle, that is, converging an electron beam emitted from the electron source;
the limiting film hole is used for limiting stray electrons and beam current;
an objective lens for focusing an incident primary electron beam onto a sample surface;
a detector for collecting electrons to form an image via photoelectric conversion;
the workbench is used for bearing a sample and movably positioning the area to be detected below the optical axis;
and the optical microscope is used for imaging and positioning the area to be measured and associating the position corresponding to the electron optical axis.
Preferably, the workbench has displacement functions in X and Y directions, and performs raster scanning movement along an imaging direction by taking the position to be measured as a center.
Preferably, the optical microscope is provided with a centering adjustment mechanism, and the centering adjustment mechanism performs translation and inclination adjustment on the lens barrel.
Preferably, the detector adopts an annular detector, a mirror surface is configured on the surface of the annular detector, and an included angle is formed between the mirror surface and the electron optical axis.
Preferably, the detector uses a silicon detector, a detection surface of the silicon detector and the optical axis form an included angle to form a reflection surface of the OM light path, and the signal is directly amplified and output.
Preferably, the detector is a Robinson detector, an included angle formed between a detection surface of the detector and an optical axis is used as a light reflection surface and receives signal electron bombardment, the rear part of the detection surface is connected with a light guide pipe and is connected with a photomultiplier to acquire an image signal through photoelectric conversion, and the detector is arranged at the opposite side of the optical microscope.
Preferably, the optical microscope further comprises an annular reflecting plate for refracting the light path of the optical microscope, receiving the signal electron bombardment and generating secondary electrons, and the central hole of the annular reflecting plate is used for allowing the primary electron beam to pass through the film hole of the annular reflecting plate.
Preferably, a secondary electron detector is arranged on the same side of the optical microscope, and the secondary electron detector can be an Everhart-Thornley (E-T) detector.
Preferably, the apparatus further comprises a deflector for focusing the primary electron beam in a raster scan across the surface of the sample.
A preferred implementation method for realizing the coaxial electron beam imaging device is characterized by comprising the following specific steps:
s1, using an electron microscope and being provided with a deflector, moving a workpiece table, positioning a pattern to be detected under the electron microscope for imaging, and recording the coordinate position (X1, Y1) of the workpiece table at the moment;
s2, switching to an optical microscope, if an annular reflecting plate is used, forming an included angle of 45 degrees between the annular reflecting plate and an electron optical axis, refracting an optical path of the optical microscope, focusing a main electron beam on the surface of an object and exciting an imaging signal electron, bombarding the annular reflecting plate by the imaging signal electron and generating a secondary electron, detecting the secondary electron by a secondary electron detector beside the detector, and judging whether the imaging position is deviated or not through detection; if the annular detector is a silicon detector, focusing a main electron beam on the surface of the object and exciting an imaging signal electron, bombarding the imaging signal electron to the mirror surface of the detector and detecting, and judging whether the imaging position is deviated or not through detection; if the annular detector is a Robinson detector, the main electron beam focuses on the surface of the object and excites an imaging signal electron, and when the imaging signal electron bombards the mirror surface of the detector, the imaging signal electron is detected by a light guide pipe connected behind the detection surface and a photomultiplier connected with the light guide pipe, and an image signal is obtained through photoelectric conversion;
s3, if the optical microscope and the electron microscope are used simultaneously to interfere with the image, the illumination of the optical microscope is turned off when the electron microscope is used;
and S4, if the deviation of the imaging positions of the electron microscope and the optical microscope is detected, adjusting the mounting position of the optical microscope, namely performing horizontal translation and inclination angle adjustment, so that the optical imaging is in the same target pattern center, and realizing the same-position imaging in the optical and electron microscope modes at the moment.
The beneficial effects of the invention are:
configuring a refraction surface, guiding an object space optical path of the optical microscope into an electron optical path, realizing coaxial or parallel detection of the refraction surface and signal electrons, and realizing direct detection and indirect detection;
direct detection: the returned signal electrons excited on the surface of the sample bombard the annular reflecting plate and generate secondary electrons, and the secondary electrons are detected by a secondary electron detector beside the optical microscope, so that the imaging position is detected, the position of the optical microscope is conveniently adjusted, and parallel co-located imaging is realized;
indirect detection: the returned signal electrons excited on the surface of the sample, the diffused signal electrons bombard the annular reflecting plate and generate secondary electrons, and the secondary electrons bombard the mirror surface of the annular detector to directly detect the imaging position, so that the position of the optical microscope is conveniently adjusted, and parallel co-located imaging is realized.
Drawings
The accompanying drawings, which are included to provide a further understanding of the invention and are incorporated in and constitute a part of this specification, illustrate embodiments of the invention and together with the description serve to explain the principles of the invention and not to limit the invention. In the drawings:
FIG. 1 is a schematic structural diagram of a conventional electron beam imaging apparatus;
FIG. 2 is a schematic view of an electron beam imaging apparatus using a ring-shaped reflection plate;
FIG. 3 is a schematic view of an electron beam imaging apparatus using a ring probe;
labeled as: 101-electron source, 1001-primary electron beam, 1002-signal electron, 1003-optical path, 102-condenser, 103-limiting film hole, 104-detector, 105-deflector, 106-objective, 108-sample, 109-stage, 110-optical microscope.
Detailed Description
The technical solutions in the embodiments of the present invention will be clearly and completely described below with reference to the drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only a part of the embodiments of the present invention, and not all of the embodiments.
Example 1:
an electron beam imaging apparatus implementing coaxiality, comprising:
an electron source 101 for emitting a primary electron beam 1001;
a condenser lens 102 for adjusting an angle of beam, that is, converging an electron beam emitted from the electron source;
a limiting film hole 103 for limiting stray electrons and beam current;
an objective lens 106 for focusing the incident primary electron beam 1001 onto the surface of the sample 108;
a detector 104 for collecting electrons to form an image via photoelectric conversion;
the workbench 109 is used for bearing the sample 108 and moving and positioning the region to be measured below the optical axis, has the displacement function in the X and Y directions, and performs raster scanning motion along the imaging direction by taking the position to be measured as the center;
the optical microscope 110 is configured to image and position the region to be measured and associate a position corresponding to the electron optical axis, and the optical microscope 110 is provided with a centering adjustment mechanism, and the centering adjustment mechanism performs translation and tilt adjustment on the lens barrel.
The electron beam imaging equipment comprises the following specific operation steps:
s1, when the optical microscope 110 is used, the workbench is moved in an optical microscope imaging mode, the imaging position is positioned to a target image, and the coordinate position (X1, Y1) of the workbench 109 is recorded at the moment;
s2, starting an electron microscope mode, moving the workbench 109 to enable the electron microscope to image the same target pattern, and recording the coordinate position (X2, Y2) of the workbench 109 at the moment;
s3, calculating the deviation of the optical axis of the optical microscope 110 and the optical axis of the electron microscope, namely the coordinate deviation amount of the two-time imaging (dX = X1-X2, dy = Y1-Y2), and storing the deviation amount into the system;
and S4, when the electron beam imaging equipment is used, the system enters an SEM mode from an OM mode, and the equipment automatically increases the displacement of the workpiece table according to the offset.
Example 2:
as shown in fig. 2, the difference from embodiment 1 is that a deflector 105, an annular reflecting plate, and a secondary electron detector are further included. The deflector 105 is used to focus the primary electron beam in a raster scan over the surface of the sample 108. The annular reflecting plate is used for refracting the light path 1003 of the optical microscope, receiving the bombardment of the signal electrons 1002 and generating secondary electrons. Meanwhile, the central hole of the annular reflecting plate is used for allowing the main electron beam to pass through the film hole of the annular reflecting plate. The secondary electron detector is located on the same side of the optical microscope 110 and may be an Everhart-Thornley (E-T) detector.
The electron beam imaging equipment comprises the following specific operation steps:
s1, firstly, using an electron microscope and matching with a deflector 105, moving a workpiece table, positioning a pattern to be detected under the electron microscope for imaging, and recording the coordinate position of a workbench 109 at the moment;
s2, using an annular reflecting plate, forming an included angle of 45 degrees between the annular reflecting plate and an electron optical axis, refracting an optical microscope light path 1003, focusing a primary electron beam on the surface of an object and exciting an imaging signal electron, bombarding the annular reflecting plate by the imaging signal electron and generating a secondary electron, detecting the secondary electron by a secondary electron detector beside the detector, and judging whether the imaging position is deviated or not through detection;
s3, if the optical microscope 110 and the electron microscope are used simultaneously to interfere with the image, the illumination of the optical microscope 110 is turned off when the electron microscope is used;
and S4, if the deviation of the imaging positions of the electron microscope and the optical microscope is detected, adjusting the installation position of the optical microscope 110, namely performing horizontal translation and inclination angle adjustment to enable the optical imaging to be in the same target pattern center, and realizing the same-position imaging in the optical and electron microscope modes at the moment.
Example 3:
as shown in fig. 3, it is different from embodiments 1 and 2 in that it further includes a deflector 105, and the deflector 105 is used to focus the primary electron beam on the raster scan of the surface of the sample 108. The detector adopts annular detector, annular detector's surface configuration mirror surface just the mirror surface forms the contained angle with electron optical axis, and the contained angle can be 45 jiaos. The detector uses a silicon detector.
The electron beam imaging equipment comprises the following specific operation steps:
s1, firstly, using an electron microscope and matching with a deflector 105, moving a workpiece table, positioning a pattern to be detected under the electron microscope for imaging, and recording the coordinate position of a workbench 109 at the moment;
s2, the detector is a silicon detector, the main electron beam focuses on the surface of the object and excites an imaging signal electron, the imaging signal electron bombards the mirror surface of the detector and detects, and whether the imaging position is deviated or not is judged through detection;
s3, if the optical microscope 110 and the electron microscope are used simultaneously to interfere with the image, the illumination of the optical microscope 110 is turned off when the electron microscope is used;
and S4, if the imaging position deviation of the electron microscope and the optical microscope is detected, adjusting the installation position of the optical microscope 110, namely performing horizontal translation and inclination angle adjustment, so that the optical imaging is in the same target pattern center, and realizing the same-position imaging in the optical and electron microscope modes at the moment.
Example 4:
the difference from example 3 is that the detector uses a Robinson detector.
The electron beam imaging equipment comprises the following specific operation steps:
s1, firstly, using an electron microscope and matching with a deflector 105, moving a workpiece table, positioning a pattern to be detected under the electron microscope for imaging, and recording the coordinate position of a workbench 109 at the moment;
s2, the detector is a Robinson detector, the main electron beam focuses on the surface of the object and excites an imaging signal electron, and when the imaging signal electron bombards the mirror surface of the detector, the imaging signal electron is detected by a light guide pipe connected behind the detection surface and a photomultiplier connected with the detection surface, and an image signal is obtained through photoelectric conversion;
s3, if the optical microscope and the electron microscope are used simultaneously to interfere with the image, the illumination of the optical microscope 110 is turned off when the electron microscope is used;
and S4, if the deviation of the imaging positions of the electron microscope and the optical microscope is detected, adjusting the installation position of the optical microscope 110, namely performing horizontal translation and inclination angle adjustment to enable the optical imaging to be in the same target pattern center, and realizing the same-position imaging in the optical and electron microscope modes at the moment.
Although the present invention has been described in detail with reference to the foregoing embodiments, it will be apparent to those skilled in the art that changes may be made in the embodiments and/or equivalents thereof without departing from the spirit and scope of the invention. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (12)
1. An electron beam imaging apparatus implementing coaxiality, comprising:
an electron source for emitting a primary electron beam;
a condenser lens for adjusting a beam angle, that is, converging an electron beam emitted from the electron source;
the limiting film hole is used for limiting stray electrons and beam current;
the objective lens is used for focusing the incident primary electron beam on the surface of the sample, and the primary electron beam excites imaging signal electrons when being focused on the surface of the sample;
the annular reflecting plate is used for refracting a light path of the optical microscope, receiving electron bombardment of an imaging signal and generating secondary electrons, a central hole of the annular reflecting plate is used for a main electron beam to pass through, and the main electron beam also passes through the limiting film hole; the annular reflecting plate and an electron optical axis form an included angle;
the workbench is used for bearing a sample and moving and positioning the area to be measured to the position below the electron optical axis;
the optical microscope is used for imaging and positioning the area to be detected and associating the position corresponding to the electron optical axis;
the workbench has the displacement function in the X direction and the Y direction, and performs raster scanning motion along the imaging direction by taking the position to be detected as the center;
and a secondary electron detector is arranged at the same side of the optical microscope, the secondary electron detector adopts an Everhart-Thornley detector, and the secondary electron detector is used for collecting secondary electrons generated by bombarding the imaging signal electrons to the annular reflecting plate and forming an image through photoelectric conversion.
2. The apparatus of claim 1, wherein the optical microscope is provided with a centering adjustment mechanism, and the centering adjustment mechanism performs translation and tilt adjustment of the lens barrel.
3. An apparatus for coaxial electron beam imaging according to claim 1 further comprising a deflector for focusing the raster scan of the primary electron beam over the surface of the sample.
4. An electron beam imaging apparatus implementing coaxiality, comprising:
an electron source for emitting a primary electron beam;
a condenser lens for adjusting a beam angle, that is, converging an electron beam emitted from the electron source;
the limiting film hole is used for limiting stray electrons and beam current;
an objective lens for focusing an incident primary electron beam onto a sample surface;
the detector is used for collecting signal electrons excited by the bombardment of the main electron beams on the surface of the sample and forming an image through photoelectric conversion;
the workbench is used for bearing a sample and moving and positioning the area to be measured to the position below the electron optical axis;
the optical microscope is used for imaging and positioning the area to be measured and associating the position corresponding to the electron optical axis;
the workbench has the displacement function in the X direction and the Y direction, and performs raster scanning motion along the imaging direction by taking the position to be detected as the center;
the detector uses a Robinson detector, an included angle is formed between a detection surface of the detector and an electron optical axis to serve as a light reflection surface and to receive signal electron bombardment, a light guide pipe is connected behind the detection surface to be connected with a photomultiplier and to obtain an image signal through photoelectric conversion, and the detector is arranged on the opposite side of the optical microscope.
5. The apparatus of claim 4, wherein the detector is an annular detector, and the surface of the annular detector is configured with a mirror surface, and the mirror surface forms an included angle with the optical axis of the electron beam.
6. An apparatus for coaxial electron beam imaging according to claim 4, further comprising a deflector for focusing the primary electron beam in a raster scan over the surface of the sample.
7. An electron beam imaging apparatus implementing coaxiality, comprising:
an electron source for emitting a primary electron beam;
a condenser lens for adjusting a beam angle, that is, converging an electron beam emitted from the electron source;
the limiting film hole is used for limiting stray electrons and beam current;
an objective lens for focusing an incident primary electron beam onto a sample surface;
the detector is used for collecting signal electrons excited by the bombardment of the main electron beams on the surface of the sample to form an image;
the workbench is used for bearing a sample and moving and positioning the area to be measured to the position below the electron optical axis;
the optical microscope is used for imaging and positioning the area to be detected and associating the position corresponding to the electron optical axis;
the workbench has the displacement function in the X direction and the Y direction, and performs raster scanning movement along the imaging direction by taking the position to be measured as the center;
the detector uses a silicon detector, the detection surface of the silicon detector and the electron optical axis form an included angle to form a reflection surface of an OM light path, and signals are directly amplified and output by the detector.
8. The apparatus of claim 7, wherein the detector is an annular detector, and a surface of the annular detector is configured with a mirror surface that forms an included angle with an optical axis of the electron optics.
9. An apparatus for coaxial electron beam imaging according to claim 7, further comprising a deflector for focusing the primary electron beam in a raster scan over the surface of the sample.
10. A method for realizing a coaxial electron beam imaging device according to claim 1, characterized by the following steps:
s11, using an electron microscope and a deflector, moving a workpiece table, positioning a pattern to be detected under the electron microscope for imaging, and recording the coordinate position (X1, Y1) of the workpiece table at the moment;
s12, switching to an optical microscope, forming an included angle between the annular reflecting plate and an electron optical axis, refracting a light path of the optical microscope, focusing a main electron beam on the surface of an object and exciting an imaging signal electron, bombarding the annular reflecting plate by the imaging signal electron and generating a secondary electron, detecting the secondary electron by a secondary electron detector beside the detector, and judging whether the imaging position is deviated or not through detection;
s13, if the optical microscope and the electron microscope are used simultaneously to interfere with the image, the illumination of the optical microscope is turned off when the electron microscope is used;
and S14, if the deviation of the imaging positions of the electron microscope and the optical microscope is detected, adjusting the mounting position of the optical microscope, namely performing horizontal translation and inclination angle adjustment to enable the optical imaging to be in the same target pattern center, and realizing the same-position imaging in the optical and electron microscope modes at the moment.
11. A method for realizing a coaxial electron beam imaging device according to claim 4, characterized by the following steps:
s21, using an electron microscope and a deflector, moving a workpiece table, positioning the pattern to be detected under the electron microscope for imaging, and recording the coordinate position (X1, Y1) of the workpiece table at the moment;
s22, switching to an optical microscope, wherein the annular detector is a Robinson detector, the main electron beam focuses on the surface of an object and excites an imaging signal electron, and when the imaging signal electron bombards the mirror surface of the detector, the imaging signal electron is detected by a light guide pipe connected behind the detection surface and a photomultiplier connected with the detection surface, and an image signal is obtained through photoelectric conversion;
s23, if the optical microscope and the electron microscope are used simultaneously to interfere with the image, the illumination of the optical microscope is turned off when the electron microscope is used;
and S24, if the deviation of the imaging positions of the electron microscope and the optical microscope is detected, adjusting the mounting position of the optical microscope, namely performing horizontal translation and inclination angle adjustment to enable the optical imaging to be in the same target pattern center, and realizing the same-position imaging in the optical and electron microscope modes at the moment.
12. A method for implementing a coaxial electron beam imaging device according to claim 7, comprising the following steps:
s31, using an electron microscope and a deflector, moving a workpiece table, positioning the pattern to be detected under the electron microscope for imaging, and recording the coordinate position (X1, Y1) of the workpiece table at the moment;
s32, switching to an optical microscope, wherein the annular detector is a silicon detector, the main electron beam focuses on the surface of the object and excites an imaging signal electron, the imaging signal electron bombards the mirror surface of the detector and detects the imaging signal electron, and whether the imaging position is deviated or not is judged through detection;
s33, if the optical microscope and the electron microscope are used simultaneously to interfere with the image, the illumination of the optical microscope is turned off when the electron microscope is used;
and S34, if the imaging position deviation of the electron microscope and the optical microscope is detected, adjusting the installation position of the optical microscope, namely performing horizontal translation and inclination angle adjustment to enable the optical imaging to be in the same target pattern center, and realizing the same-position imaging in the optical and electron microscope modes at the moment.
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| JPH0955181A (en) * | 1995-08-11 | 1997-02-25 | Jeol Ltd | Scanning electron microscope |
| CN106910665A (en) * | 2017-03-01 | 2017-06-30 | 聚束科技（北京）有限公司 | A kind of full-automatic SEM and its detection method |
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| JP5860642B2 (en) * | 2011-09-07 | 2016-02-16 | 株式会社日立ハイテクノロジーズ | Scanning electron microscope |
| KR101725506B1 (en) * | 2015-07-20 | 2017-04-12 | 한국표준과학연구원 | Scanning electron microscopy capable of observing optical image of sample |
| CN108292580B (en) * | 2015-12-03 | 2019-06-11 | 松定精度株式会社 | Charged particle line apparatus and scanning electron microscope |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| JPH0955181A (en) * | 1995-08-11 | 1997-02-25 | Jeol Ltd | Scanning electron microscope |
| CN106910665A (en) * | 2017-03-01 | 2017-06-30 | 聚束科技（北京）有限公司 | A kind of full-automatic SEM and its detection method |
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