CN113532489A - Capacitance type sensing architecture based on mott insulator memristor - Google Patents
Capacitance type sensing architecture based on mott insulator memristor Download PDFInfo
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- CN113532489A CN113532489A CN202110714883.2A CN202110714883A CN113532489A CN 113532489 A CN113532489 A CN 113532489A CN 202110714883 A CN202110714883 A CN 202110714883A CN 113532489 A CN113532489 A CN 113532489A
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- memristor
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- mott insulator
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- 239000012212 insulator Substances 0.000 title claims abstract description 70
- 230000008859 change Effects 0.000 claims description 5
- 239000002184 metal Substances 0.000 claims description 5
- 238000007599 discharging Methods 0.000 claims description 4
- 230000007704 transition Effects 0.000 claims description 4
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 3
- 229910021389 graphene Inorganic materials 0.000 claims description 3
- 239000000463 material Substances 0.000 claims description 3
- HFLAMWCKUFHSAZ-UHFFFAOYSA-N niobium dioxide Inorganic materials O=[Nb]=O HFLAMWCKUFHSAZ-UHFFFAOYSA-N 0.000 claims description 3
- 230000000630 rising effect Effects 0.000 claims 1
- 238000013528 artificial neural network Methods 0.000 description 6
- 230000000638 stimulation Effects 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 210000002569 neuron Anatomy 0.000 description 2
- 230000009471 action Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 230000001537 neural effect Effects 0.000 description 1
- 239000011664 nicotinic acid Substances 0.000 description 1
- 238000012421 spiking Methods 0.000 description 1
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
- G01D5/14—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage
- G01D5/24—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying capacitance
- G01D5/241—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means influencing the magnitude of a current or voltage by varying capacitance by relative movement of capacitor electrodes
Abstract
The invention discloses a capacitance type sensing framework based on a mott insulator memristor, which comprises a current source, an output voltage signal end, a pulse generation unit and a receptor; the pulse generation unit comprises a mott insulator memristor, one end of the mott insulator memristor is connected with the current source and the output voltage signal end, and the other end of the mott insulator memristor is grounded; the susceptor comprises a capacitive sensor; the capacitive sensor is connected with the mott insulator memristor in parallel, and the framework is simple in structure and low in power consumption.
Description
Technical Field
The invention relates to a capacitive sensing architecture, in particular to a capacitive sensing architecture based on a mott insulator memristor.
Background
Spiking Neural Networks (SNNs) have gained increasing attention and research as third generation artificial Neural networks. The impulse neural network is an artificial neural network based on discrete neural impulse processing information, and can well simulate the working principle of biological neurons due to good biological rationality. The impulse neural network encodes information into membrane potential and impulse delay of a neuron, and high-efficiency and low-consumption information transmission and processing are realized by utilizing impulses.
Most of the existing bionic sensing units need to convert external stimulation into signals which can be processed by a pulse neural network through certain external circuits, and the circuits are usually complex, so that high power consumption is caused.
In addition, the analog-to-digital conversion circuit of the capacitive sensor is very complex, and a high-precision analog-to-digital conversion circuit is required to realize accurate identification of the capacitance variation, which greatly increases the cost of the capacitive sensor.
Disclosure of Invention
The invention aims to overcome the defects of the prior art and provides a capacitance type sensing framework based on a mott insulator memristor, wherein the framework has the advantages of simple structure, low power consumption and low cost.
In order to achieve the above object, the capacitive sensing architecture based on the mott insulator memristor according to the present invention includes a current source, an output voltage signal terminal, a pulse generating unit, and a receptor;
the pulse generation unit comprises a mott insulator memristor, one end of the mott insulator memristor is connected with the current source and the output voltage signal end, and the other end of the mott insulator memristor is grounded;
the susceptor comprises a capacitive sensor; the capacitive sensor is connected in parallel with a mott insulator memristor.
The mott insulator memristor is a vertical structure.
The mott insulator memristor is in a structure of a conductive electrode, a mott insulator resistance change layer and a conductive electrode.
The capacitive sensor is a temperature sensor, a pressure sensor, a gas sensor or a humidity sensor.
The material of the resistance change layer is VO2、NbO2Or NbxV(1-x)O2A ternary oxide.
The conductive electrode is made of ITO, Pt, TiN or graphene.
When the voltage across the mott insulator memristor reaches the threshold voltage VthWhen the current is in the conducting electrode state, the Mort insulator memristor is converted from the insulating state to the conducting electrode state; when the voltage drop across the mott insulator memristor reaches the holding voltage VholdAt this time, the mott insulator memristor transitions from a metallic state to an insulating state.
When a constant current I is inputinWhen the capacitive sensor is in a charging state, the capacitive sensor is in a charging state; when the voltage at two ends of the mott insulator memristor reaches the threshold voltage, the mott insulator memristor is converted from an insulation state to a metal state, meanwhile, the voltage at two ends of the mott insulator memristor is reduced, and the capacitive sensor discharges; when the voltage at two ends of the mott insulator memristor drops to a holding voltage, the mott insulator memristor is converted from a metal state to an insulation state, meanwhile, the voltage at two ends of the mott insulator memristor rises, and the capacitive type sensor is charged; the voltage pulse signal with the preset frequency is generated in a circulating reciprocating mode.
The invention has the following beneficial effects:
the capacitance type sensing framework based on the mott insulator memristor comprises a current source IinOutput voltage signal terminal VoutA pulse generating unit and a receptor; when the sensor works, when external stimulation sensed by the sensor changes, the capacitance value of the sensor changes, so that the charging and discharging time of the pulse generating unit during working changes, the number of pulses generated in unit time changes, and the condition after the external stimulation changes is obtained by reading the number of pulses at the output voltage signal end.
Drawings
FIG. 1 is a schematic structural diagram of the present invention.
Detailed Description
The invention is described in further detail below with reference to the accompanying drawings:
referring to fig. 1, the capacitance type sensing architecture based on mott insulator memristors according to the present invention includes a pulse generation unit and a receptor.
Wherein the pulse generating unit comprises a mott insulator memristor RM(ii) a Mote insulator memristor RMOne terminal of (1) and a current source IinAnd an output voltage signal terminal VoutConnected, mott insulator memristor RMAnd the other end of the same is grounded.
The sensor comprises a capacitive sensor Csensor(ii) a Capacitive sensor CsensorAnd mott insulator memristor RMAre connected in parallel.
Wherein, the mott insulator memristor RMThe structure is a vertical structure, namely a metal-resistance change layer-metal structure; wherein the resistance change layer is VO2Or NbO2The metal-insulator transition material is made of ITO, Pt, TiN or graphene. Wherein, the mott insulator memristor RMThe working principle is as follows: when mott insulator memristor RMThe voltage across reaches the threshold voltage VthTime, mott insulator memristor RMThe insulating state is changed into a metal state; when mott insulator memristor RMIs dropped to a holding voltage VholdTime, mott insulator memristor RMFrom the metallic state to the insulating state.
The working principle of the pulse generating unit is as follows: when a proper constant current I is inputinCapacitive sensor CsensorFirstly, the battery is in a charging state; when mott insulator memristor RMWhen the voltage at the two ends of the resistor reaches the threshold voltage, the Mort insulator memristor RMFrom an insulating state to a metallic state while the mott insulator memristor RMCapacitive sensor C with reduced voltage acrosssensorDischarging; when mott insulator memristor RMWhen the voltage between the two ends of the resistor drops to a holding voltage, the Mort insulator memristor RMTransition from metallic to insulating state with mott insulator memristor RMThe voltage across is increased, electricityCapacitive sensor CsensorCharging; the voltage pulse signal with a certain frequency is generated by the cyclic reciprocating.
The working principle of the receptor is as follows: under the action of external stimuli, such as temperature, pressure, gas, humidity and the like, the capacitance of the sensor changes correspondingly.
Wherein, the capacitive sensor CsensorIs a temperature sensor, a pressure sensor, a gas sensor or a humidity sensor, and is a capacitive sensor C under corresponding external stimulationsensorThe capacitance value of (2) changes.
The working principle of the invention is as follows: when the external stimulus sensed by the sensor changes, the capacitance value of the capacitive sensor changes, so that the charging and discharging time of the pulse generating unit during working changes, the number of pulses generated in unit time changes, and the output voltage signal end V is readoutThe number of pulses is obtained, and the condition of the external stimulation is obtained after the external stimulation is changed.
Claims (8)
1. A capacitive sensing architecture based on mott insulator memristors, characterized in that it comprises a current source (I)in) Output voltage signal terminal (V)out) A pulse generating unit and a receptor;
the pulse generating unit comprises a mott insulator memristor (R)M) Mote insulator memristor (R)M) With one terminal of a current source (I)in) And an output voltage signal terminal (V)out) Connected, mott insulator memristor (R)M) The other end of the first and second electrodes is grounded;
the sensor comprises a capacitive sensor (C)sensor) (ii) a Capacitive sensor (C)sensor) And mott insulator memristor (R)M) Are connected in parallel.
2. Capacitive sensing architecture based on mott-insulator memristors, according to claim 1, characterized in that the capacitive sensor (C)sensor) A temperature sensor, a pressure sensor, an inertial force sensor, a tactile sensor, a gas sensor, or a humidity sensor.
3. The capacitive sensing architecture of claim 1, wherein the mott insulator memristor (R) is a capacitance-type sensing architecture based on the mott insulator memristorM) Is in a vertical structure.
4. The capacitive sensing architecture of claim 3, wherein the mott insulator memristor (R) is a capacitance-type sensing architecture based on the mott insulator memristorM) Is a structure of a conductive electrode, a mott insulator resistance change layer and a conductive electrode.
5. The capacitive sensing architecture of claim 4, wherein the mott insulator resistive layer is VO2、NbO2Or NbxV(1-x)O2A ternary oxide.
6. The capacitive sensing architecture based on mott-insulator memristors according to claim 4, wherein the material of the conductive electrode uses ITO, Pt, TiN, or graphene.
7. The capacitive sensing architecture of claim 1, wherein the Monte insulator memristor (R) is configured as a Monte insulator memristorM) The voltage across reaches the threshold voltage VthTime, mott insulator memristor (R)M) The insulating state is changed into a metal state; when mott insulator memristor (R)M) Is dropped to a holding voltage VholdTime, mott insulator memristor (R)M) From the metallic state to the insulating state.
8. The capacitive sensing architecture of claim 1, wherein when a constant current I is input, the capacitance is characterized byinCapacitive sensor (C)sensor) Firstly, the battery is in a charging state; when mott insulator memristor (R)M) When the voltage across (R) reaches the threshold voltage, the mott insulator memristor (R)M) Transition from an insulating state to a metallic state with a mott insulator memristor (R)M) Capacitive sensor C with reduced voltage acrosssensorDischarging; when mott insulator memristor (R)M) When the voltage across (R) drops to the holding voltage, the mott insulator memristor (R)M) Transition from metallic to insulating state with mott insulator memristor (R)M) A capacitive sensor (C) with a rising voltage across its terminalssensor) Charging; the voltage pulse signal with the preset frequency is generated in a circulating reciprocating mode.
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Cited By (1)
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| CN114440942A (en) * | 2022-02-17 | 2022-05-06 | 陕西格芯国微半导体科技有限公司 | Novel sensor of perception coding integration based on mott memristor |
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Application publication date: 20211022 |