CN111537111A - Dual-signal output nerve morphology touch sensor and preparation method thereof - Google Patents
Dual-signal output nerve morphology touch sensor and preparation method thereof Download PDFInfo
- Publication number
- CN111537111A CN111537111A CN202010357703.5A CN202010357703A CN111537111A CN 111537111 A CN111537111 A CN 111537111A CN 202010357703 A CN202010357703 A CN 202010357703A CN 111537111 A CN111537111 A CN 111537111A
- Authority
- CN
- China
- Prior art keywords
- signal
- electrode
- capacitor
- transistor
- memristor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Images
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/005—Measuring force or stress, in general by electrical means and not provided for in G01L1/06 - G01L1/22
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y15/00—Nanotechnology for interacting, sensing or actuating, e.g. quantum dots as markers in protein assays or molecular motors
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y40/00—Manufacture or treatment of nanostructures
Abstract
The invention discloses a nerve morphology touch sensor with double signal outputs and a preparation method thereof, wherein the sensor generates two paths of electric signals for simulating biological touch: FA signal and SA signal. Wherein FA is a pulse signal which is actively released by TENG under external force, and SA is a pulse signal which is released by a Mott insulator switch. When the friction point nano generator is subjected to dynamic external force, the sensor can immediately output an FA signal; when the friction electricity nano generator is subjected to static external force and the touch signal is greater than a preset threshold value, the thin film transistor is started, the capacitor C starts to charge, when the voltage of the upper end of the capacitor rises to reach a certain threshold value, the Mott insulator can be conducted, and at the moment, the circuit finishes one-time discharging, namely an SA pulse is generated. The Mott insulator then closes and the capacitor C charges again, thereby beginning the cycle. The FA signal can extract dynamic information related to texture, sliding, touch separation, and the like, and the SA signal can extract static information related to constant force, continuous deformation, and the like. The nerve morphology touch sensor avoids an ADC sampling conversion circuit, and finally breaks through the technical bottlenecks of huge sensing data volume, difficulty in acquisition and transmission and high energy consumption of back-end operation faced by the array type touch sensor.
Description
Technical Field
The invention relates to the field of touch sensors, in particular to a nerve morphology touch sensor with double signal outputs and an implementation method thereof.
Background
Tactile sensors have been an important research direction in the field of flexible electronics. Due to the characteristic of flexibility and mounting, the application is more flexible. Another important advantage of flexible tactile sensors is that it is easier to achieve an arrayed integration of the sensing units, thus mimicking the large number of tactile receptors distributed in the skin, providing sufficient spatial information for tactile perception.
Unfortunately, most of the currently reported array-type tactile sensors only give static pressure distribution images, and the dynamic pressure distribution images are rarely reported. For this reason, the data amount generated by the sensor increases in geometric progression due to the increase of the sampling frequency in the array, which brings great challenges to the transmission and processing of the back-end signals.
Disclosure of Invention
Aiming at the problem that the conventional touch sensor can only output static pressure or dynamic pressure distribution, the invention provides a double-signal output nerve morphology touch sensor and an implementation method thereof.
The invention is realized by the following technical scheme:
a neuromorphic tactile sensor with double signal outputs comprises a triboelectric nanogenerator and a pulse encoder based on a Mott memristor;
the triboelectric nano-generator collects the tactile signals and directly outputs the dynamic tactile signals in the tactile signals through the triboelectric nano-generator; and if the static tactile signal is larger than the preset threshold value, the static tactile signal is output to a pulse encoder through a grid electrode of a pulse encoder transistor, and the pulse encoder converts the static tactile signal into a pulse signal in situ and outputs the pulse signal.
Preferably, the pulse encoder comprises a transistor, a capacitor C and a Mott memristor;
a transistor for outputting a haptic control signal to charge the capacitor according to the input haptic information;
the capacitor is used for controlling the conduction of the Mott memristor according to the voltage value during charging;
and the Mott memristor is used for outputting a pulse signal according to resistance state change.
Preferably, the grid of the transistor is connected with the triboelectric nano-generator, one end of the capacitor C is connected with the source of the transistor, the other end of the capacitor C is grounded, one end of the Mott memristor is connected with the source of the transistor, and the other end of the Mott memristor outputs a static signal.
Preferably, the output end of the Mott memristor is further connected with a resistor R, and the other end of the resistor is grounded.
Preferably, the transistor is a flexible transistor.
A preparation method of a nerve morphology touch sensor with double signal outputs comprises the following steps:
the source electrode and the drain electrode are respectively positioned at two ends of the channel, the gate electrode is positioned at the other side of the channel, the lower electrode of the triboelectric nano generator is connected with the gate electrode, the source electrode is respectively connected with the capacitor and the memristor, and the memristor is connected with the resistor;
and 5, preparing an upper membrane of a pressing unit of the triboelectric nano generator by adopting a rollover process, pressing the ITO flexible electrode on the upper membrane of the pressing unit to serve as an upper electrode of the friction point nano generator, and finally paving the upper electrode on a fourth composite structure to finish the preparation of the nerve form touch sensor.
Preferably, the material of the semiconductor channel layer is IGZO, the thickness of the semiconductor channel layer is 100nm, the gas flow ratio of argon to oxygen during sputtering is 100:1, and the time is 50 min.
Preferably, the memristor resistance change layer is made of NbO2Or VO2。
Preferably, the upper layer film of the pressing unit of the triboelectric nano-generator is a silica gel film with a flexible protrusion array.
Preferably, the source electrode, the drain electrode and the triboelectric gate electrode of the transistor are made of Ti or Au.
Compared with the prior art, the invention has the following beneficial technical effects:
according to the nerve form touch sensor with double signal outputs, the triboelectric nano generator is combined with the pulse encoder based on the Mott memristor, so that the nerve form touch sensor with FA and SA signal outputs is realized, wherein the triboelectric nano generator outputs a pulse to provide a vibration signal sensed by a device and simulate an FA signal in biological touch; output current I of GEL-FET gated with TENGDSAs a static force signal, and converted into frequency and I by a pulse encoder based on Mott memristorDSThe two tactile signals are output in the form of active pulse signals and can be directly used as input of SNNs (natural noise networks) for extracting tactile informationAnd the system can also be accessed into a biological nervous system to provide a tactile feedback function for the robot or the artificial limb. Therefore, the technical bottlenecks of huge sensing data volume, difficult acquisition and transmission and high energy consumption of rear-end operation of the array type touch sensor are overcome by an ADC sampling conversion circuit.
Drawings
FIG. 1 is a schematic diagram of the construction of a tactile sensing unit of the present invention;
FIG. 2 is a circuit schematic of the tactile sensing unit of the present invention;
FIG. 3 is a flow chart of a process for manufacturing a tactile sensing unit according to the present invention;
FIG. 4 shows the structure and test results of a TENG/Gel-TFT type touch sensor device in an embodiment of the present invention.
In the figure: 1. the device comprises a flexible substrate 2, a slow response output electrode 3, a fast response output electrode 4, a channel layer 5, a transistor 6, an ionic gel 7, a capacitor 8, a resistor 9, a triboelectric nano-generator 10 and a memristor.
Detailed Description
The present invention will now be described in further detail with reference to the attached drawings, which are illustrative, but not limiting, of the present invention.
Referring to fig. 1 and 2, a neuromorphic tactile sensor with dual signal outputs includes a triboelectric nanogenerator 10 and a pulse encoder based on a Mott memristor.
The triboelectricity nanogenerator 10 and the pulse encoder are combined in situ, the triboelectricity nanogenerator 10 collects a touch signal, the triboelectricity nanogenerator 10 outputs a dynamic signal, meanwhile, when the touch signal is greater than a preset threshold value, the touch signal is output to the pulse encoder through a grid electrode of the transistor, and the pulse encoder converts a static touch signal into a pulse signal in situ to be output.
Specifically, the pulse encoder comprises a transistor, a capacitor C and a Mott memristor;
the transistor is used for outputting an antenna control signal to charge the capacitor according to the input tactile information;
the capacitor is used for controlling the conduction of the Mott memristor according to the voltage value during charging;
and the Mott memristor is used for outputting a pulse signal according to resistance state change.
The gate of the transistor is connected with the triboelectric nano-generator 10, one end of a capacitor C is connected with the source of the transistor, the other end of the capacitor C is grounded, one end of a Mott memory resistor is connected with the source of the transistor, the other end of the Mott memory resistor outputs a static signal, the output end of the Mott memory resistor is further connected with a resistor R, and the other end of the resistor is grounded.
The triboelectric nano-generator is combined with the flexible thin film transistor, the grid voltage is controlled by the triboelectric nano-generator, and an output signal of the triboelectric nano-generator and a channel current of the thin film transistor are respectively output as two different sensing signals.
When the static force is applied to the voltage generated on the friction electricity nano generator to cause the flexible thin film transistor to be started, the source-drain current charges the capacitor, when the voltage on the capacitor rises to reach a certain threshold value, the Mott insulator can be conducted, at the moment, the circuit finishes one-time discharging, and an SA pulse is generated. Thereby realizing the function of the static force signal output by the triboelectric tactile sensor with static/dynamic dual signal output as claimed in claim 2, namely, the in-situ coding of the channel current of the thin film transistor into a pulse signal.
The resistance change layer of the Mott memristor is NbO2Or VO2。
The Mott memristor 10 is used for carrying out in-situ coding on the touch sensing signal, and the capacitor 7 is continuously charged through the transistor to reach the critical voltage value for opening the Mott insulator, so that the relevant static information such as constant force and continuous deformation is extracted.
Referring to fig. 3, the present invention further provides a method for manufacturing the dual signal output neuromorphic tactile sensor, including the following steps:
and 3, respectively sputtering a source electrode, a drain electrode, a gate electrode, an inter-device connecting line, a thin film resistor CrSi, a memristor lower electrode, a friction point nanogenerator lower electrode, a power line electrode and a ground wire electrode of the thin film transistor 5 on the second composite structure.
The source electrode and the drain electrode are respectively positioned at two ends of the channel layer, the channel length of 20um is reserved, the gate electrode is positioned at the other side of the channel and is not in contact with the channel to serve as a side gate, the devices are connected as shown in the figure 2, the lower electrode of the triboelectric nano generator is connected with the gate electrode, the drain electrode is connected with the power line, the source electrode is connected with the capacitor and the memristor, and the memristor is connected with the resistor to obtain a third composite structure;
and 5, preparing a mold by using a 3D printing process, preparing an upper layer film of the triboelectric nanogenerator pressing unit, namely a silica gel film with a flexible protrusion array, by turning the mold, pressing an ITO flexible electrode on the silica gel film to serve as an upper electrode of the triboelectric nanogenerator, and finally laying the upper electrode on a fourth composite structure to finish the preparation of the device.
In a preferred embodiment of the present invention, the flexible substrate is made of PET and has a thickness of 0.5 mm.
The source electrode, drain electrode, and triboelectric gate electrode of the transistor 5 were made of Ti/Au and had a thickness of 300 nm.
The thickness of the IGZO semiconductor channel layer is 100nm, the gas flow ratio of argon to oxygen during sputtering is 100:1, and the time is 50 min.
The material of the ionic gel is 1-ethyl-3-methylimidazoline bis (trifluoromethylsulfonyl) imide, and the ionic liquid is mixed with the polymer.
The wavelength of the ultraviolet light is 365nm, and the irradiation time is 60 s;
the lower friction layer of the triboelectric nano-generator is made of aluminum, the upper friction layer of the triboelectric nano-generator is made of silica gel, and the thickness of the lower friction layer is 0.5mm when the lower friction layer is in a shape of a circular dome protruding structure.
The material of the capacitor dielectric layer is also selected from ionic gel, and the electrode area of 100um multiplied by 100um manufactured reaches 1nF capacitor.
The resistor material is a snake-shaped thin film resistor made of CrSi; the material of the resistance change layer of the Mott memristor is NbO2Or VO2。
The invention discloses a nerve morphology touch sensor with double signal outputs, which generates two paths of electric signals for simulating biological touch: FA signal and SA signal.
Wherein FA is a pulse signal which is actively released by TENG under external force, and SA is a pulse signal which is released by a Mott insulator switch. When TENG is applied with external force, the sensor will output FA signal immediately, and at the same time GEL-TFT is turned on, IDS charges the capacitor C. When the voltage on the upper end of the capacitor rises to reach a certain threshold value, the Mott insulator can be conducted, and at the moment, the circuit finishes one-time discharge, namely, an SA pulse is generated. Then the Mott insulator closes and IDS recharges the capacitor C. The FA signal can extract dynamic information related to texture, sliding, touch separation, and the like, and the SA signal can extract static information related to constant force, continuous deformation, and the like. Because the two tactile signals are output in the form of active pulse signals, the two tactile signals can be directly used as the input of SNNs to extract and judge tactile information, and can also be accessed into a biological nervous system to provide a tactile feedback function for a robot or a prosthetic limb. Therefore, the technical bottlenecks of huge sensing data volume, difficult acquisition and transmission and high energy consumption of rear-end operation of the array type touch sensor are overcome by an ADC sampling conversion circuit.
FIG. 4 shows the test result of the sensor combining the friction point nano-generator and the flexible thin film transistor, and FIG. a is a schematic structural diagram of the test device; the graph b is a response graph of multipoint pressing force, and different sensing units hardly interfere with each other; FIG. c is a graph of channel current as a function of pressure, showing that the triboelectric tactile sensor has a large force response range; and the graph d and the graph e are response graphs of the dynamic force and the static force respectively, wherein the graph e is the keeping condition of the current of the transistor under the static force, and the transistor can be continuously conducted under the static force, so that the triboelectric output voltage can control the thin film transistor to be switched on and charge the capacitor, and the in-situ pulse coding of a static force signal is realized.
The above-mentioned contents are only for illustrating the technical idea of the present invention, and the protection scope of the present invention is not limited thereby, and any modification made on the basis of the technical idea of the present invention falls within the protection scope of the claims of the present invention.
Claims (10)
1. A neuromorphic tactile sensor with dual signal outputs is characterized by comprising a triboelectric nano-generator (10) and a pulse encoder based on a Mott memristor;
the triboelectric nano-generator (10) collects the tactile signals, and the dynamic tactile signals are directly output through the triboelectric nano-generator (10); and if the static tactile signal is larger than the preset threshold value, the static tactile signal is output to a pulse encoder through a grid electrode of a pulse encoder transistor, and the pulse encoder converts the static tactile signal into a pulse signal in situ and outputs the pulse signal.
2. The dual signal output neuromorphic tactile sensor of claim 1, wherein the pulse encoder comprises a transistor, a capacitor C, and a Mott memristor;
a transistor for outputting a haptic control signal to charge the capacitor according to the input haptic information;
the capacitor is used for controlling the conduction of the Mott memristor according to the voltage value during charging;
and the Mott memristor is used for outputting a pulse signal according to resistance state change.
3. The neuromorphic tactile sensor with dual signal outputs as claimed in claim 2, wherein the gate of the transistor is connected to the triboelectric nanogenerator (10), one end of the capacitor C is connected to the source of the transistor, the other end of the capacitor C is grounded, one end of the Mott memristor is connected to the source of the transistor, and the other end outputs a static signal.
4. The neuromorphic tactile sensor with dual signal outputs as claimed in claim 3, wherein the output end of the Mott memristor is further connected with a resistor R, and the other end of the resistor is grounded.
5. The dual signal output neuromorphic tactile sensor of claim 1, wherein the transistor is a flexible transistor.
6. A method for preparing a dual signal output neuromorphic tactile sensor according to any one of claims 1 to 5, comprising the steps of:
step 1, sputtering patterned slow-response output electrodes, fast-response output electrodes, lower electrodes of capacitors and lower electrodes of memristors on a substrate by adopting a magnetron sputtering process, and covering a layer of oxide on the output electrodes to be used as an interlayer to obtain a first composite structure;
step 2, respectively sputtering a memristor resistance change layer and a channel layer of a thin film transistor on the interlayer to obtain a second composite structure;
step 3, respectively sputtering a source electrode, a drain electrode, a gate electrode, a thin film resistor CrSi, a memristor lower electrode and a friction point nanometer generator lower electrode of the thin film transistor on the second composite structure;
the source electrode and the drain electrode are respectively positioned at two ends of the channel, the gate electrode is positioned at the other side of the channel, the lower electrode of the triboelectric nano generator is connected with the gate electrode, the source electrode is respectively connected with the capacitor and the memristor, and the memristor is connected with the resistor;
step 4, spin-coating a layer of ion gel above the channel and on the lower electrode of the capacitor, curing by ultraviolet light irradiation, sputtering the upper electrode of the capacitor, and connecting the upper electrode of the capacitor with the ground wire to obtain a fourth composite structure;
and 5, preparing an upper membrane of a pressing unit of the triboelectric nano generator by adopting a rollover process, pressing the ITO flexible electrode on the upper membrane of the pressing unit to serve as an upper electrode of the friction point nano generator, and finally paving the upper electrode on a fourth composite structure to finish the preparation of the nerve form touch sensor.
7. The method for manufacturing a neuromorphic tactile sensor with dual signal outputs according to claim 6, wherein the material of the semiconductor channel layer is IGZO, the thickness of the semiconducting channel layer is 100nm, the gas flow ratio of argon gas to oxygen gas during sputtering is 100:1, and the time is 50 min.
8. The method of claim 6, wherein the memristor resistive layer is NbO2Or VO2。
9. The method for manufacturing a neuromorphic tactile sensor with dual signal outputs according to claim 6, wherein the membrane on the pressing unit of the triboelectric nanogenerator is a silica gel membrane with a flexible protrusion array.
10. The method for manufacturing a dual-signal-output neuromorphic tactile sensor according to claim 6, wherein the source electrode, the drain electrode and the triboelectric gate electrode of the transistor (5) are made of Ti or Au.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010357703.5A CN111537111A (en) | 2020-04-29 | 2020-04-29 | Dual-signal output nerve morphology touch sensor and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202010357703.5A CN111537111A (en) | 2020-04-29 | 2020-04-29 | Dual-signal output nerve morphology touch sensor and preparation method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN111537111A true CN111537111A (en) | 2020-08-14 |
Family
ID=71977313
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202010357703.5A Pending CN111537111A (en) | 2020-04-29 | 2020-04-29 | Dual-signal output nerve morphology touch sensor and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN111537111A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113532489A (en) * | 2021-06-25 | 2021-10-22 | 西安交通大学 | Capacitance type sensing architecture based on mott insulator memristor |
| WO2022040742A1 (en) * | 2020-08-26 | 2022-03-03 | Royal Melbourne Institute Of Technology | Sensors |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN205622624U (en) * | 2016-05-17 | 2016-10-05 | 福州大学 | Analog to digital conversion circuit based on recall and hinder ware |
| CN106608612A (en) * | 2016-10-13 | 2017-05-03 | 北京纳米能源与系统研究所 | Active touch sensor |
| CN109449286A (en) * | 2018-10-10 | 2019-03-08 | 清华大学 | A kind of nitride memristor and preparation method thereof that phase transformation nano particle is inlayed |
| US20190326913A1 (en) * | 2016-05-24 | 2019-10-24 | Technion Research & Development Foundation Limited | Logic design with unipolar memristors |
| CN110647982A (en) * | 2019-09-26 | 2020-01-03 | 中国科学院微电子研究所 | Artificial sensory nerve circuit and preparation method thereof |
| CN110998731A (en) * | 2017-07-26 | 2020-04-10 | 香港科技大学 | Hybrid memristor/field effect transistor memory cell and information encoding scheme thereof |
-
2020
- 2020-04-29 CN CN202010357703.5A patent/CN111537111A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN205622624U (en) * | 2016-05-17 | 2016-10-05 | 福州大学 | Analog to digital conversion circuit based on recall and hinder ware |
| US20190326913A1 (en) * | 2016-05-24 | 2019-10-24 | Technion Research & Development Foundation Limited | Logic design with unipolar memristors |
| CN106608612A (en) * | 2016-10-13 | 2017-05-03 | 北京纳米能源与系统研究所 | Active touch sensor |
| CN110998731A (en) * | 2017-07-26 | 2020-04-10 | 香港科技大学 | Hybrid memristor/field effect transistor memory cell and information encoding scheme thereof |
| CN109449286A (en) * | 2018-10-10 | 2019-03-08 | 清华大学 | A kind of nitride memristor and preparation method thereof that phase transformation nano particle is inlayed |
| CN110647982A (en) * | 2019-09-26 | 2020-01-03 | 中国科学院微电子研究所 | Artificial sensory nerve circuit and preparation method thereof |
Non-Patent Citations (3)
| Title |
|---|
| F. GUL: "Circuit Implementation of Nano-Scale TiO2 Memristor Using Only Metal-Oxide-Semiconductor Transistors", 《IEEE ELECTRON DEVICE LETTERS》 * |
| XUMENG ZHANG等: "An artificial spiking afferent nerve based on Mott memristors for neurorobotics", 《NATURE COMMUNICATIONS》 * |
| ZHIPENG LIAO等: "A tactile sensor translating texture and sliding", 《NANOSCALE》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2022040742A1 (en) * | 2020-08-26 | 2022-03-03 | Royal Melbourne Institute Of Technology | Sensors |
| CN113532489A (en) * | 2021-06-25 | 2021-10-22 | 西安交通大学 | Capacitance type sensing architecture based on mott insulator memristor |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN106662899B (en) | The integrated form piezoelectric cantilever actuator and transistor applied for touch input and touch feedback | |
| Kang et al. | Fingerprint‐inspired conducting hierarchical wrinkles for energy‐harvesting E‐skin | |
| Ling et al. | Electrolyte-gated transistors for synaptic electronics, neuromorphic computing, and adaptable biointerfacing | |
| CN103777803A (en) | Single-electrode touch sensor and preparation method thereof | |
| KR101696127B1 (en) | An apparatus and associated methods | |
| CN111537111A (en) | Dual-signal output nerve morphology touch sensor and preparation method thereof | |
| CN105552132B (en) | Thin-film transistor sensor and preparation method thereof | |
| CN103411710B (en) | A kind of pressure transducer, electronic skin and touch-screen equipment | |
| CN105136369B (en) | A kind of Grazing condition resistance-type touch-pressure sensation detecting sensor and preparation method thereof | |
| JP2018109982A (en) | Single sensor and haptic actuator | |
| CN109068477B (en) | A kind of sensitive member of pliable pressure temperature integrated thin-film sensor array and preparation method | |
| EP2981991B1 (en) | Piezoelectric generating for location signaling | |
| CN104426412A (en) | Electric-signal output device and electric-signal output method based on skin | |
| US20140312737A1 (en) | Layer composite comprising electroactive layers | |
| CN105841850B (en) | A kind of piezoelectric transducer and preparation method thereof | |
| CN104813260A (en) | Printed piezoelectric pressure sensing foil | |
| CN110954251A (en) | Pressure-capacitance and piezoresistive coupling proximity sensing and contact force sensor | |
| CN106225811B (en) | A kind of flexible piezoelectric sensors array and preparation method thereof with generating function | |
| CN107850941A (en) | Electromechanical actuator for the touch feedback in electronic equipment | |
| CN104236764A (en) | Capacitive slide tactile sensor | |
| Wang et al. | Stretchable transistor‐structured artificial synapses for neuromorphic electronics | |
| CN104827491B (en) | The intelligence machine application on human skin of high sensitivity | |
| Li et al. | Flexible artificial synapses based on field effect transistors: From materials, mechanics towards applications | |
| CN204604356U (en) | Flexible responsive artificial skin | |
| CN207231534U (en) | Integrated detection sensor and touch sensible equipment |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20200814 |
|
| RJ01 | Rejection of invention patent application after publication |