CN113529053B - Solid precursor source sublimation device and method for semiconductor processing - Google Patents
Solid precursor source sublimation device and method for semiconductor processing Download PDFInfo
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- CN113529053B CN113529053B CN202111069799.6A CN202111069799A CN113529053B CN 113529053 B CN113529053 B CN 113529053B CN 202111069799 A CN202111069799 A CN 202111069799A CN 113529053 B CN113529053 B CN 113529053B
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01D—SEPARATION
- B01D7/00—Sublimation
Abstract
The invention discloses a solid precursor source sublimation device and a solid precursor source sublimation method for semiconductor processing, and aims to overcome the defects that the solid precursor source is unstable in volatilization and sublimation and the solid precursor source is low in utilization rate. The device comprises a storage box, a plurality of trays arranged in the storage box and an electric heating temperature control plate arranged at the bottom of the trays, wherein a plurality of storage tanks used for loading solid precursor sources are densely distributed on the trays, the storage box forms a snake-shaped ventilation flow channel, a carrier gas inlet and a mixed steam outlet are arranged on the storage box, and two ends of the ventilation flow channel are respectively communicated with the carrier gas inlet and the mixed steam outlet. The electric heating type solid precursor source storage sublimation device can provide uniform and stable heat energy for volatilization and sublimation of the solid precursor source, avoids the formation of a low-resistance channel phenomenon, can still be used for some solid precursor sources which are easy to harden and have certain vapor pressure, provides the vapor of the solid precursor source with stable concentration, and improves the utilization rate of the solid precursor source.
Description
Technical Field
The present invention relates to semiconductor processing technology, and more particularly, to a solid precursor source sublimation apparatus and method for semiconductor processing.
Background
Precursors are the main raw materials for semiconductor thin film deposition processes. IC precursors can be summarized as: the material is applied to the semiconductor production and manufacturing process, carries target elements, is in a gaseous state or a volatile liquid state, has chemical thermal stability, and simultaneously has corresponding reactivity or physical properties. In semiconductor manufacturing processes including thin film, photolithography, interconnect, doping techniques, and the like, precursors are mainly used in vapor deposition (including physical deposition PVD, chemical vapor deposition CVD, and atomic vapor deposition ALD) to form various thin film layers that meet semiconductor manufacturing requirements. In addition, the precursor can also be used for semiconductor epitaxial growth, etching, ion implantation doping, cleaning and the like, and is one of core materials in semiconductor manufacturing.
Currently, in the process of using a solid precursor source as a key process material in a vapor deposition technology, the operating characteristics of a vapor deposition system determine that the solid precursor source material needs to be converted into a vapor phase and transported into a reactor chamber of the system, so as to obtain the deposition of a target element. In the currently widely implemented method, an integral source bottle is placed in a transportable system device, heat energy is given outside the source bottle, the heat energy is transferred into the bottle through the bottle wall, and a solid precursor source inside the bottle is indirectly heated, so as to meet the use requirement of the vapor of the solid precursor source required by the vapor deposition process. A number of such source bottles have emerged in the process, with a chamber storing a solid precursor source capable of progressively generating solid precursor source vapor under external heat input supply and specific pressure conditions. In view of such technical needs, the source bottle has a need for thermal energy, and the solid precursor source is heated to volatilize and carry vapor from the solid precursor source under a carrier gas flow to the demand system.
Vapor pressures are known to be generally low for many types of solid precursor sources, and in currently practiced vapor draw methods for solid precursor sources, it is common to adjust carrier gas flux and external heat delivery intensity to provide the vapor for the more stable vapor deposition process. This provides a solid precursor source vapor concentration that has a strong volatility over time, as well as a characteristic of decreasing vapor concentration with decreasing solid precursor source volume in the source bottle, which instability is detrimental to the vapor deposition process. When the solid precursor source in the source bottle has the characteristic of hardening, the instability of the steam concentration of the solid precursor source is more prominent, and similarly, when the accumulation layer of the solid precursor source in the source bottle is broken down by the carrier gas flow, a low-resistance gas flow channel is formed, and a large amount of carrier gas escapes from the low-resistance gas flow channel, the steam concentration of the solid precursor source is reduced sharply, and the phenomenon becomes more serious along with the increase of the carrier gas flux. The hardened and low-resistance channel can seriously affect the utilization rate of the solid precursor source in the source bottle, and increase the shutdown frequency of the equipment, which is very unfavorable for vapor deposition.
Disclosure of Invention
In order to overcome the defects, the invention provides a solid precursor source sublimation device and a solid precursor source sublimation method for semiconductor processing, which can provide uniform and stable heat energy for the volatilization and sublimation of the solid precursor source, prevent the formation of a low-resistance channel, still utilize some solid precursor sources which are easy to harden and have certain vapor pressure, provide the vapor of the solid precursor source with stable concentration, improve the utilization rate of the solid precursor source and reduce the shutdown frequency of equipment.
In order to solve the technical problems, the invention adopts the following technical scheme: a solid precursor source sublimation device for semiconductor processing comprises a storage box, trays arranged in the storage box and an electric heating temperature control plate arranged at the bottoms of the trays, wherein a plurality of storage tanks for loading solid precursor sources are densely distributed on the trays; the vent grooves on the two adjacent trays are arranged on the left side of one tray and on the right side of the other tray, and all vent cavities are communicated together by the vent grooves to form a snake-shaped vent flow channel; the material storage box is provided with a carrier gas inlet and a mixed steam outlet, and two ends of the ventilation flow channel are respectively communicated with the carrier gas inlet and the mixed steam outlet; the tray is of a box-shaped structure with an opening at the upper end, a plurality of transverse baffles and a plurality of longitudinal baffles are arranged in the tray, and the plurality of transverse baffles and the plurality of longitudinal baffles are crossed to form a plurality of material storage tanks; the length direction of the transverse baffle is arranged along the flowing direction of the airflow of the ventilation cavity, and the upper edge of the longitudinal baffle is higher than the upper edge of the transverse baffle and the upper edge of the tray.
The solid precursor source is uniformly loaded in the storage tanks on the tray, the volatilization area is relatively stable, the concentration of the solid precursor source steam generated by the solid precursor source steam generating device formed by the storage tanks, the electric heating temperature control plate and the solid precursor source is stable, the formed solid precursor source steam is fully mixed with carrier gas to form mixed steam with stable concentration, and the mixed steam is connected into the reaction chamber of the vapor deposition system through the mixed steam outlet to realize the stable supply of the solid precursor source. Solid precursor sources are uniformly arranged in different material storage tanks, hardening is not easy to generate, and compared with the method of accumulating all the solid precursor sources together, the method is favorable for improving the volatilization efficiency and the utilization rate of the solid precursor sources. The electric heating temperature control plate heats the tray to provide uniform stable heat energy for the volatilization and sublimation of the solid precursor source in the storage tank. The storage tanks are independent cavities and are used for uniformly filling the solid precursor sources, which is beneficial to the stable volatilization of the solid precursor sources, particularly the solid precursor sources with hardening-prone characteristics, not only prevents the formation of low-resistance channels which easily appear on a carrier gas passing through a solid precursor source accumulation layer adopted by the traditional vapor deposition, but also provides a relatively stable solid precursor volatilization area. The application area of the solid precursor source with accurate temperature control and stability provides help for the stability of the steam concentration. Compared with the traditional solid precursor source volatilization device, the solid precursor source volatilization device has the advantages of accurate temperature control, uniform heat supply, quick temperature rise, stable vapor concentration of the solid precursor source, high utilization rate of the solid precursor source, wider use variety and the like, greatly prolongs the service cycle of the solid precursor, reduces the shutdown bottle changing frequency, and provides assistance for the efficient and smooth vapor deposition process.
The vent grooves communicate the upper and lower adjacent vent cavities, the vent grooves on the two adjacent trays are far away from each other, and air flow is guided to flow along the farthest path in the vent cavities, so that the contact time of carrier gas and a solid precursor source is fully guaranteed. The transverse baffle and the longitudinal baffle separate the storage tanks to form a plurality of independent cavities for uniformly filling the solid precursor sources. The upper edge of the longitudinal baffle is protruded upwards to block and reduce the speed of the passing carrier gas, thereby creating favorable conditions for prolonging the contact time of the carrier gas and the solid precursor source.
The solid precursor source sublimation device for semiconductor processing can provide uniform and stable heat energy for volatilization and sublimation of the solid precursor source, prevent the formation of a low-resistance channel phenomenon, still can utilize some solid precursor sources which are easy to harden and have certain vapor pressure, provide the vapor of the solid precursor source with stable concentration, improve the utilization rate of the solid precursor source and reduce the shutdown frequency of equipment.
Preferably, the electric heating temperature control plate is internally provided with an electric heating wire and a temperature sensor. The electric heating temperature control plate with the structure is convenient for controlling the heating temperature.
Preferably, the electric heating temperature control plate is provided with a communication groove corresponding to the vent groove, and the communication groove is communicated with the vent groove.
Preferably, an air inlet cavity and a volatilization cavity are arranged in the storage box, the tray is installed in the volatilization cavity, one end of the ventilation flow channel is communicated with the carrier gas inlet through the air inlet cavity, and the other end of the ventilation flow channel is communicated with the mixed steam outlet.
And the carrier gas is sent into the gas inlet cavity through the carrier gas inlet, fully mixed with the vapor of the solid precursor source through the serpentine ventilation flow channel in the volatilization cavity, and finally discharged from the mixed vapor outlet and sent into the vapor deposition system.
Preferably, the bottom of the tray is provided with a slot, and the electric heating temperature control plate is inserted and connected with the slot in a matching way. The arrangement of the slots facilitates the connection and installation of the electric heating temperature control plate and the tray.
Preferably, the upper portion of the longitudinal baffle is provided with an adjusting plate, the adjusting plate is rotatably arranged, a push-pull rod is installed in the storage box, the adjusting plate is connected with the push-pull rod, the push-pull rod moves to drive the adjusting plate to rotate, a plurality of driving rods are installed on one side of the adjusting plate and in one-to-one correspondence with the storage tanks, the lower ends of the driving rods are arranged in the storage tanks, piston cylinders are installed outside the storage box, magnetic blocks are installed on telescopic rods of the piston cylinders, sliding blocks capable of attracting the magnetic blocks mutually are installed in the storage box, the sliding blocks can slide in the storage box, and the push-pull rod is connected with the sliding blocks.
The distance between the upper end of the adjusting plate and the tray is adjusted through rotation of the adjusting plate, the effective area of the adjusting plate for blocking the airflow is adjusted, and the flow rate of the airflow is adjusted. When the adjusting plate is in the vertical position, the distance between the upper end of the adjusting plate and the tray is minimum. When the flow rate of the air flow is too fast, the telescopic rod of the piston cylinder moves to drive the magnetic block to move, the sliding block moves along with the magnetic block, the push-pull rod connected with the sliding block moves and drives the adjusting plate to rotate, the distance between the upper end of the adjusting plate and the tray is reduced, the blocking area of the air flow is increased, the flow rate of the air flow is reduced, and a favorable condition is created for prolonging the contact time of the carrier gas and the solid precursor source. When the flow velocity of air current is too slow, the telescopic link reverse movement of piston cylinder drives regulating plate antiport, increases the interval between regulating plate upper end and the tray for the velocity of flow of air current. When the adjusting plate rotates, the deflector rod connected with the adjusting plate stirs the solid precursor source in the storage tank, so that the solid precursor source is prevented from being hardened, the volatilization efficiency of the solid precursor source is increased, and the utilization rate of the solid precursor source is improved.
An electrothermal solid precursor source storage sublimation method operating with a solid precursor source sublimation apparatus for semiconductor processing, comprising: a. a solid precursor source is filled in a storage tank on the tray, and an electric heating temperature control plate is arranged at the bottom of the tray; b. the tray and the electric heating temperature control plate are arranged in a storage box together, and the storage box is closed; c. connecting a carrier gas inlet and a mixed steam outlet to a pipeline of a vapor deposition system, and introducing carrier gas into the carrier gas inlet; d. the electric heating temperature control plate is electrified for heating, the electric heating temperature control plate heats the solid precursor source in the storage tank, so that solid precursor source steam with stable concentration is generated in the ventilation cavity, and the solid precursor source steam is brought into the vapor deposition system through the carrier gas.
The solid precursor sources are all arranged in independent storage tanks, the volatilization areas are relatively stable, the concentration of the solid precursor source steam generated by a solid precursor source steam generating device formed by the storage tanks, the electric heating temperature control plate and the solid precursor sources is stable, and the formed solid precursor source steam is fully mixed with carrier gas to form mixed steam with stable concentration. The electric heating temperature control plate is electrified and heated, so that the temperature can be controlled conveniently, and solid precursor steam with stable concentration can be formed.
Compared with the prior art, the invention has the beneficial effects that: (1) the solid precursor source sublimation device for semiconductor processing can provide uniform and stable heat energy for the volatilization and sublimation of the solid precursor source, prevent the formation of a low-resistance channel phenomenon, still can utilize some solid precursor sources which are easy to harden and have certain vapor pressure, provide the vapor of the solid precursor source with stable concentration, improve the utilization rate of the solid precursor source and reduce the shutdown frequency of equipment; (2) the flow rate of the gas flow in the storage tank can be adjusted, and the solid precursor source is stirred while the flow rate is adjusted, so that the carrier gas and the vapor of the solid precursor source are fully mixed, and the vapor of the solid precursor source with stable concentration is provided for the vapor deposition system.
Drawings
FIG. 1 is a schematic diagram of an embodiment of the present invention;
FIG. 2 is an exploded view of the present invention;
FIG. 3 is a sectional view of embodiment 1 of the present invention;
FIG. 4 is a sectional view of embodiment 2 of the present invention;
FIG. 5 is an enlarged partial schematic view of FIG. 4 of the present invention;
in the figure: 1. the device comprises a storage box, 2, a tray, 3, an electric heating temperature control plate, 4, a storage tank, 5, a carrier gas inlet, 6, a mixed steam outlet, 7, a transverse baffle, 8, a longitudinal baffle, 9, an air vent groove, 10, a communication groove, 11, an air inlet cavity, 12, a volatilization cavity, 13, an end cover, 14, an air vent window, 15, a control valve, 16, an adjusting plate, 17, a push-pull rod, 18, a deflector rod, 19, a piston cylinder, 20, a magnetic block, 21 and a sliding block.
Detailed Description
The technical scheme of the invention is further described in detail by the following specific embodiments in combination with the attached drawings:
example 1: a solid precursor source sublimation device for semiconductor processing (see attached figures 1 to 3) comprises a storage box 1, trays 2 arranged in the storage box and an electric heating temperature control plate 3 arranged at the bottom of the trays, wherein a plurality of storage tanks 4 for loading solid precursor sources are densely distributed on the trays, a plurality of trays arranged at intervals up and down are arranged in the storage box, a ventilation cavity is formed by a gap between two adjacent trays up and down, a ventilation cavity is formed between the tray at the top and the top of the storage box, and a ventilation groove 9 is arranged at one side of each tray; the vent grooves on the upper and lower adjacent trays are arranged on the left side of one tray and on the right side of the other tray, and all vent cavities are communicated together by the vent grooves to form a snake-shaped vent flow channel. The electric heating temperature control plate and the vent groove are correspondingly provided with a communicating groove 10 which is communicated with the vent groove. The material storage box is provided with a carrier gas inlet 5 and a mixed steam outlet 6, and two ends of the ventilation flow channel are respectively communicated with the carrier gas inlet and the mixed steam outlet.
The tray is upper end open-ended box structure, is equipped with a plurality of horizontal baffles 7 and a plurality of longitudinal baffle 8 in the tray, and a plurality of horizontal baffles and a plurality of longitudinal baffle intersect and form a plurality of stock chest. The length direction of the transverse baffle is arranged along the flowing direction of the airflow of the ventilation cavity, and the upper edge of the longitudinal baffle is higher than the upper edge of the transverse baffle and the upper edge of the tray. The electric heating temperature control plate is internally provided with an electric heating wire and a temperature sensor.
An air inlet cavity 11 and a volatilization cavity 12 are arranged in the storage box, the tray is arranged in the volatilization cavity, one end of the ventilation flow channel is communicated with the carrier gas inlet through the air inlet cavity, and the other end of the ventilation flow channel is communicated with the mixed steam outlet. The bottom of the tray is provided with a slot, and the electric heating temperature control plate is inserted and connected with the slot in a matching way.
An opening is formed in one side of the storage box, the opening is tightly connected with the end cover 13, the electric heating temperature control plate is integrated on the end cover, and the tray is installed together with the electric heating temperature control plate through a slot in the bottom. The end cover is connected with the storage box through bolts.
The end cover is made of EP grade 316L stainless steel, the inner side of the end cover is vertically intersected with the electric heating temperature control plate, the end cover and the electric heating temperature control plate are combined into a whole in a welding fixing mode, the distance between the electric heating temperature control plates on each layer meets the installation height of the tray, the vertical axial distance between the longitudinal baffle on the tray and the electric heating temperature control plate meets the requirement that gas passes through, all exposed surfaces of the assembly are subjected to protection treatment such as spraying, electrolysis, chemical passivation and the like, and the pollution to a solid precursor source is avoided; and the outer side of the end cover is provided with a wiring port of a power line and a temperature signal line, and the wiring port is covered and sealed by using a wiring plug. The end cap surface was mechanically polished to Ra < 0.25 μm.
The communicating groove on the electric heating temperature control plate and the vent groove on the tray correspond to each other and are completely or partially overlapped, so that carrier gas can pass through the communicating groove and the vent groove conveniently. The air inlet cavity in the storage box is arranged opposite to the end cover, an air vent window 14 is arranged between the lower part of the air inlet cavity and the volatilization cavity, an air vent grid is arranged at the position of the air vent window, an air vent groove on the tray at the bottom is arranged on the side wall of the tray, and the air vent groove on the side wall of the tray is correspondingly communicated with the air vent window. The vent grooves on the other trays are arranged on the bottom surface of the tray. The air inlet cavity is arranged to change the flowing form of air, the flow rate of the air in the storage box is reduced, the air inlet cavity is communicated with the volatilization cavity through the ventilation window at the lower part, the area of the ventilation window is slightly smaller than the rectangular ventilation groove in the side wall of the tray, and the air is enabled to be uniformly distributed in the horizontal direction as far as possible when flowing into the volatilization cavity from the air inlet cavity.
The carrier gas inlet and the mixed steam outlet are arranged on the upper portion of the storage box, the carrier gas inlet and the mixed steam outlet are both connected with control valves 15, and the control valves can be manual valves, pneumatic valves and electromagnetic valves, preferably pneumatic valves. The material conveying pipeline of the vapor deposition system connected with the mixed steam outlet is provided with a flow meter near the reaction chamber, and the flow rate of the mixed steam can be monitored so as to realize quantitative control and meet the requirement of adjusting the conveying capacity of the solid precursor source for meeting the requirement of the manufacturing process.
The tray is preferably made of EP grade 316L stainless steel, and the inner surface and the outer surface are subjected to protection treatment such as spraying, electrolysis, chemical passivation and the like according to the chemical property of the contained solid precursor source so as to protect the contained object from being polluted.
The storage tank and the matched connecting pipeline are made of EP grade 316L stainless steel, and the surface of the storage tank is subjected to one or more protective treatments such as spraying, electrolysis, chemical passivation and the like.
The heating wires and the temperature sensor in the electric heating temperature control plate are wrapped by heat-resistant and insulating materials, and the heating wires are uniformly distributed at each position of the electric heating temperature control plate. A certain number of electric heating rods with good appearance insulation performance are embedded into a metal block with good heat conduction performance, such as an aluminum block, to form a uniform heat supply module; EP grade 316L stainless steel is preferably adopted for sealing and wrapping outside, and the surface is subjected to protection treatment such as spraying, electrolysis, chemical passivation and the like, so that an electric heating temperature control plate is formed, and pollution to a solid precursor source borne by a sublimator is avoided.
An electrothermal solid precursor source storage sublimation method operating with a solid precursor source sublimation apparatus for semiconductor processing, comprising: a. a solid precursor source is filled in a storage tank on the tray, and an electric heating temperature control plate is arranged at the bottom of the tray; b. the tray and the electric heating temperature control plate are arranged in a storage box together, and the storage box is closed; c. connecting a carrier gas inlet and a mixed steam outlet to a pipeline of a vapor deposition system, and introducing carrier gas into the carrier gas inlet; d. the electric heating temperature control plate is electrified for heating, the electric heating temperature control plate heats the solid precursor source in the storage tank, so that solid precursor source steam with stable concentration is generated in the ventilation cavity, and the solid precursor source steam is brought into the vapor deposition system through the carrier gas. After vapor deposition, various film layers meeting the semiconductor manufacturing requirements are formed.
The electrothermal solid precursor source storing and sublimating method can be applied to the field of vapor deposition of one or more solid precursor sources, wherein the solid precursor source comprises one or more of simple substances, compounds and mixtures which can obtain one or more target elements by vapor deposition or ion implantation, and is not limited to the method.
Uniformly filling a certain amount of PDMAT (pentakis (dimethylamino) tantalum) into each material storage tank of each tray in an inert gas environment, assembling and fixing each tray on each layer of electrothermal temperature control plate, sending an end cover, the electrothermal temperature control plate, the tray and a solid precursor source assembly into a volatilization cavity of a storage box, and tightly sealing the end cover and the storage box by using bolts; when PDMAT is required to be provided to a reaction chamber of the vapor deposition system, a carrier gas inlet is connected to a carrier gas pipeline of the vapor deposition system, a mixed steam outlet is connected to a material conveying pipeline of the vapor deposition system, a power line and a temperature signal line are connected with a temperature controller matched with an external device, carrier gas with a target flow rate is introduced, the controller sets a target temperature and then starts heating, PDMAT steam is continuously generated in each material storage tank for containing the PDMAT after the PDMAT is rapidly heated to the target temperature and accurately controlled in temperature, the steam and the carrier gas are fully mixed to form mixed steam with stable concentration, and the mixed steam flows out from the mixed steam outlet under the action of pressure difference and is conveyed into the target reaction chamber through the material conveying pipeline of the vapor deposition system to complete the acquisition of target elements.
Example 2: a solid precursor source sublimation device for semiconductor processing (see attached figure 4 and attached figure 5) is similar to that in embodiment 1, and mainly has the difference that an adjusting plate 16 is arranged on the upper portion of a longitudinal baffle plate in the embodiment, the adjusting plate can be rotatably arranged, a push-pull rod 17 is arranged in a storage box, the adjusting plate is connected with the push-pull rod, the push-pull rod moves to drive the adjusting plate to rotate, a plurality of shift rods 18 are arranged on one side of the adjusting plate and the storage box in a one-to-one correspondence mode, the lower ends of the shift rods are arranged in the storage box, a piston cylinder 19 is arranged outside the storage box, a magnetic block 20 is arranged on a telescopic rod of the piston cylinder, a sliding block 21 capable of attracting the magnetic block mutually is arranged in the storage box, the sliding block can slide in the storage box, and the push-pull rod is connected with the sliding block. The lower end of the adjusting plate is hinged to the upper end of the longitudinal baffle, a mounting groove is formed in the adjusting plate and corresponds to the push-pull rod, the mounting groove is long in shape, the push-pull rod movably penetrates through the mounting groove, positioning blocks are connected to two sides of the mounting groove in the push-pull rod, and the adjusting plate is arranged between the two positioning blocks. The adjusting plate is connected to the longitudinal baffle on each tray, a push-pull rod is correspondingly arranged on each tray, the upper push-pull rod and the lower push-pull rod are connected through a connecting rod, and the connecting rod penetrates through the vent groove. All the push-pull rods are connected together through connecting rods to form a snake-shaped structure. The other structure is the same as embodiment 1.
The distance between the upper end of the adjusting plate and the tray is adjusted through rotation of the adjusting plate, the effective area of the adjusting plate for blocking the airflow is adjusted, and the flow rate of the airflow is adjusted. When the adjusting plate is in the vertical position, the distance between the upper end of the adjusting plate and the tray is minimum. When the flow rate of the air flow is too fast, the telescopic rod of the piston cylinder moves to drive the magnetic block to move, the sliding block moves along with the magnetic block, the push-pull rod connected with the sliding block moves and drives the adjusting plate to rotate, the distance between the upper end of the adjusting plate and the tray is reduced, the blocking area of the air flow is increased, the flow rate of the air flow is reduced, and a favorable condition is created for prolonging the contact time of the carrier gas and the solid precursor source. When the flow velocity of air current is too slow, the telescopic link reverse movement of piston cylinder drives regulating plate antiport, increases the interval between regulating plate upper end and the tray for the velocity of flow of air current. When the adjusting plate rotates, the deflector rod connected with the adjusting plate stirs the solid precursor source in the storage tank, so that the solid precursor source is prevented from being hardened, the volatilization efficiency of the solid precursor source is increased, and the utilization rate of the solid precursor source is improved.
The above-described embodiments are merely preferred embodiments of the present invention, which is not intended to be limiting in any way, and other variations and modifications are possible without departing from the scope of the invention as set forth in the appended claims.
Claims (6)
1. A solid precursor source sublimation device for semiconductor processing is characterized by comprising a storage box, trays arranged in the storage box and an electric heating temperature control plate arranged at the bottoms of the trays, wherein a plurality of storage tanks for loading solid precursor sources are densely distributed on the trays; the vent grooves on the two adjacent trays are arranged on the left side of one tray and on the right side of the other tray, and all vent cavities are communicated together by the vent grooves to form a snake-shaped vent flow channel; the material storage box is provided with a carrier gas inlet and a mixed steam outlet, and two ends of the ventilation flow channel are respectively communicated with the carrier gas inlet and the mixed steam outlet; the tray is of a box-shaped structure with an opening at the upper end, a plurality of transverse baffles and a plurality of longitudinal baffles are arranged in the tray, and the plurality of transverse baffles and the plurality of longitudinal baffles are crossed to form a plurality of material storage tanks; the length direction of the transverse baffle is distributed along the flowing direction of the airflow of the ventilation cavity, and the upper edge of the longitudinal baffle is higher than the upper edge of the transverse baffle and the upper edge of the tray; the upper portion of the longitudinal baffle is provided with an adjusting plate, the adjusting plate is arranged in a rotating mode, a push-pull rod is installed in the storage box and connected with the push-pull rod, the push-pull rod moves to drive the adjusting plate to rotate, a plurality of driving levers are installed on one side of the adjusting plate and in one-to-one correspondence with the storage tank, the lower ends of the driving levers are arranged in the storage tank, a piston cylinder is installed outside the storage box, a magnetic block is installed on a telescopic rod of the piston cylinder, a sliding block capable of attracting the magnetic block mutually is installed in the storage box, the sliding block can slide in the storage box, and the push-pull rod is connected with the sliding block.
2. The solid precursor source sublimation apparatus of claim 1, wherein the electrically heated thermal control plate has an electrically heated wire and a temperature sensor mounted therein.
3. The solid precursor source sublimation apparatus for semiconductor processing as claimed in claim 1, wherein the electric heating temperature control plate is provided with a communicating groove corresponding to the vent groove, and the communicating groove is communicated with the vent groove.
4. The solid precursor source sublimation apparatus for semiconductor processing as claimed in claim 1, wherein the storage tank is provided with an air inlet chamber and a volatilization chamber, the tray is mounted in the volatilization chamber, one end of the ventilation channel is communicated with the carrier gas inlet through the air inlet chamber, and the other end of the ventilation channel is communicated with the mixed vapor outlet.
5. The apparatus of any one of claims 1 to 4, wherein the tray has slots at the bottom thereof, and the electrothermal temperature control plate is adapted to be inserted into the slots.
6. A method of solid precursor source sublimation for semiconductor processing, characterized by operating with the solid precursor source sublimation apparatus for semiconductor processing of any one of claims 1 to 5, comprising the steps of: a. a solid precursor source is filled in a storage tank on the tray, and an electric heating temperature control plate is arranged at the bottom of the tray; b. the tray and the electric heating temperature control plate are arranged in a storage box together, and the storage box is closed; c. connecting a carrier gas inlet and a mixed steam outlet to a pipeline of a vapor deposition system, and introducing carrier gas into the carrier gas inlet; d. the electric heating temperature control plate is electrified for heating, the electric heating temperature control plate heats the solid precursor source in the storage tank, so that solid precursor source steam with stable concentration is generated in the ventilation cavity, and the solid precursor source steam is brought into the vapor deposition system through the carrier gas.
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| CN115046127A (en) * | 2022-06-24 | 2022-09-13 | 江苏南大光电材料股份有限公司 | Steel cylinder structure for supplying solid compound |
| CN115717681B (en) * | 2022-11-18 | 2023-12-29 | 浙江陶特半导体材料有限公司 | Steel cylinder for precursor solid source |
| CN116103636A (en) * | 2023-04-12 | 2023-05-12 | 上海星原驰半导体有限公司 | Solid-phase precursor output device and vapor deposition system |
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| US20030111014A1 (en) * | 2001-12-18 | 2003-06-19 | Donatucci Matthew B. | Vaporizer/delivery vessel for volatile/thermally sensitive solid and liquid compounds |
| US7638002B2 (en) * | 2004-11-29 | 2009-12-29 | Tokyo Electron Limited | Multi-tray film precursor evaporation system and thin film deposition system incorporating same |
| US20080241805A1 (en) * | 2006-08-31 | 2008-10-02 | Q-Track Corporation | System and method for simulated dosimetry using a real time locating system |
| US9034105B2 (en) * | 2008-01-10 | 2015-05-19 | American Air Liquide, Inc. | Solid precursor sublimator |
| US11926894B2 (en) * | 2016-09-30 | 2024-03-12 | Asm Ip Holding B.V. | Reactant vaporizer and related systems and methods |
| WO2019023011A1 (en) * | 2017-07-25 | 2019-01-31 | Linde Aktiengesellschaft | Solid composition sublimer apparatus, systems, and methods of using same |
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