CN113529022A - Preparation method of solar cell selective doping structure and solar cell - Google Patents
Preparation method of solar cell selective doping structure and solar cell Download PDFInfo
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- CN113529022A CN113529022A CN202010323515.0A CN202010323515A CN113529022A CN 113529022 A CN113529022 A CN 113529022A CN 202010323515 A CN202010323515 A CN 202010323515A CN 113529022 A CN113529022 A CN 113529022A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 304
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 304
- 239000010703 silicon Substances 0.000 claims abstract description 304
- 239000000758 substrate Substances 0.000 claims abstract description 197
- 238000000151 deposition Methods 0.000 claims abstract description 92
- 230000008021 deposition Effects 0.000 claims abstract description 91
- 238000009792 diffusion process Methods 0.000 claims abstract description 46
- 238000000034 method Methods 0.000 claims abstract description 44
- 239000012535 impurity Substances 0.000 claims abstract description 28
- 238000007738 vacuum evaporation Methods 0.000 claims abstract description 27
- 230000008569 process Effects 0.000 claims abstract description 16
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 13
- 235000012431 wafers Nutrition 0.000 claims description 290
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 56
- 238000004381 surface treatment Methods 0.000 claims description 34
- 238000010438 heat treatment Methods 0.000 claims description 31
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 28
- 239000003513 alkali Substances 0.000 claims description 28
- 238000005530 etching Methods 0.000 claims description 22
- 238000001035 drying Methods 0.000 claims description 21
- 238000005406 washing Methods 0.000 claims description 19
- 239000008367 deionised water Substances 0.000 claims description 18
- 238000005498 polishing Methods 0.000 claims description 18
- 229910021641 deionized water Inorganic materials 0.000 claims description 16
- 229910052757 nitrogen Inorganic materials 0.000 claims description 14
- 238000012876 topography Methods 0.000 claims description 13
- 238000004140 cleaning Methods 0.000 claims description 12
- 238000001704 evaporation Methods 0.000 claims description 12
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 239000000243 solution Substances 0.000 claims description 12
- 239000007864 aqueous solution Substances 0.000 claims description 11
- 230000008020 evaporation Effects 0.000 claims description 11
- 239000002253 acid Substances 0.000 claims description 9
- 238000010926 purge Methods 0.000 claims description 9
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 8
- 238000005520 cutting process Methods 0.000 claims description 7
- 239000010432 diamond Substances 0.000 claims description 7
- 229910003460 diamond Inorganic materials 0.000 claims description 7
- 239000002019 doping agent Substances 0.000 claims description 7
- 150000002500 ions Chemical class 0.000 claims description 7
- 229910021645 metal ion Inorganic materials 0.000 claims description 7
- 229910017604 nitric acid Inorganic materials 0.000 claims description 7
- 238000002791 soaking Methods 0.000 claims description 7
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 6
- 239000000654 additive Substances 0.000 claims description 6
- 230000000996 additive effect Effects 0.000 claims description 5
- 239000010453 quartz Substances 0.000 claims description 5
- 238000001816 cooling Methods 0.000 claims description 4
- 239000011259 mixed solution Substances 0.000 claims description 4
- 239000004480 active ingredient Substances 0.000 claims description 3
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 3
- 239000002699 waste material Substances 0.000 abstract description 7
- 238000010924 continuous production Methods 0.000 abstract description 6
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 15
- 239000007787 solid Substances 0.000 description 8
- 238000007639 printing Methods 0.000 description 7
- 239000012153 distilled water Substances 0.000 description 6
- 238000006243 chemical reaction Methods 0.000 description 5
- -1 e.g. Inorganic materials 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 5
- 239000002184 metal Substances 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 229910052755 nonmetal Inorganic materials 0.000 description 4
- 239000002243 precursor Substances 0.000 description 4
- 230000006798 recombination Effects 0.000 description 4
- 238000005215 recombination Methods 0.000 description 4
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 description 3
- 239000002585 base Substances 0.000 description 3
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 description 3
- 239000007789 gas Substances 0.000 description 3
- 230000006698 induction Effects 0.000 description 3
- 230000004807 localization Effects 0.000 description 3
- 239000002002 slurry Substances 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 239000012670 alkaline solution Substances 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 229910052810 boron oxide Inorganic materials 0.000 description 2
- 229910052681 coesite Inorganic materials 0.000 description 2
- 229910052906 cristobalite Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910001392 phosphorus oxide Inorganic materials 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910052682 stishovite Inorganic materials 0.000 description 2
- 238000010301 surface-oxidation reaction Methods 0.000 description 2
- VSAISIQCTGDGPU-UHFFFAOYSA-N tetraphosphorus hexaoxide Chemical compound O1P(O2)OP3OP1OP2O3 VSAISIQCTGDGPU-UHFFFAOYSA-N 0.000 description 2
- 229910052905 tridymite Inorganic materials 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910019213 POCl3 Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- XHXFXVLFKHQFAL-UHFFFAOYSA-N phosphoryl chloride Substances ClP(Cl)(Cl)=O XHXFXVLFKHQFAL-UHFFFAOYSA-N 0.000 description 1
- 229910021426 porous silicon Inorganic materials 0.000 description 1
- 238000003672 processing method Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 230000036632 reaction speed Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- LIVNPJMFVYWSIS-UHFFFAOYSA-N silicon monoxide Chemical compound [Si-]#[O+] LIVNPJMFVYWSIS-UHFFFAOYSA-N 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- WXMKPNITSTVMEF-UHFFFAOYSA-M sodium benzoate Chemical compound [Na+].[O-]C(=O)C1=CC=CC=C1 WXMKPNITSTVMEF-UHFFFAOYSA-M 0.000 description 1
- 235000010234 sodium benzoate Nutrition 0.000 description 1
- 239000004299 sodium benzoate Substances 0.000 description 1
- 239000001509 sodium citrate Substances 0.000 description 1
- NLJMYIDDQXHKNR-UHFFFAOYSA-K sodium citrate Chemical compound O.O.[Na+].[Na+].[Na+].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O NLJMYIDDQXHKNR-UHFFFAOYSA-K 0.000 description 1
- 230000006641 stabilisation Effects 0.000 description 1
- 238000011105 stabilization Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000004094 surface-active agent Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
- 238000004804 winding Methods 0.000 description 1
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/02—Pretreatment of the material to be coated
- C23C14/028—Physical treatment to alter the texture of the substrate surface, e.g. grinding, polishing
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/541—Heating or cooling of the substrates
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
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- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/02—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion materials in the solid state
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- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/08—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state the diffusion materials being a compound of the elements to be diffused
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- C—CHEMISTRY; METALLURGY
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- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/18—Controlling or regulating
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- C30B33/00—After-treatment of single crystals or homogeneous polycrystalline material with defined structure
- C30B33/08—Etching
- C30B33/10—Etching in solutions or melts
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic System
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
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- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a preparation method of a solar cell selective doping structure and a solar cell, wherein the preparation method comprises the steps of carrying out doping source localized deposition on a silicon wafer substrate in a vacuum evaporation device, carrying out high-temperature diffusion on the doping source localized deposition region to realize heavy doping, and then introducing a gas source into a diffusion furnace to carry out step-by-step diffusion to realize the full-surface shallow doping process to prepare the selective doping structure. The damage and the open-circuit voltage loss to the monocrystalline silicon substrate of the solar cell can not be caused, and the performance of the cell is effectively ensured; other impurities cannot be introduced, so that the performance of the battery cannot be influenced by pollution, and the continuous production is facilitated; the whole operation is simple, the method is suitable for large-scale production, and excessive resource waste can not be caused.
Description
Technical Field
The invention relates to the technical field of solar cells, in particular to a preparation method of a solar cell selective doping structure and a solar cell.
Background
A solar cell is a semiconductor device that converts solar energy into electrical energy. In a conventional crystalline silicon solar cell, in order to reduce the contact resistance between an electrode and a silicon wafer, the sheet resistance is generally required to be controlled below 100 Ω/sqr, but at this time, the recombination of the surface of the silicon wafer is relatively large, thereby causing the limitation on the conversion efficiency of the solar cell. Selectively doped solar cells can solve this problem well.
The selective doping solar cell is characterized in that a selective doping structure is prepared on a silicon wafer, so that the contact area of a metal electrode of the solar cell forms heavy doping of impurities, and the contact resistance of the cell is reduced; and meanwhile, light doping is carried out on the non-metal electrode area, so that the doping concentration is reduced, auger recombination is reduced, and the open voltage is improved. Thereby achieving the purpose of improving the performance of the solar cell.
The current manufacturing method for selectively doping the structure mainly comprises the following steps: a dopant source paste printing method, a dopant source-containing solid precursor method, and the like. The printing method of the doping source slurry is to print the doping source-containing slurry on the metal electrode contact area needing heavy doping, and then form heavy doping on the silicon substrate through diffusion, while the non-heavy doping area can form shallow doping through gaseous source diffusion. The method has the defects that the doping source slurry contains more organic matter components, and generates more carbon which is not completely combusted under the action of high temperature during diffusion in a diffusion furnace, so that the subsequent process production is polluted, the subsequent battery performance is reduced, and the continuous production is not facilitated. The doping source-containing solid precursor method has the disadvantages that the operation is complex, the doping source-containing solid precursor can increase extra production cost, the used doping source-containing solid precursor needs to be recycled, the resource waste is serious, and the method is not suitable for mass production.
Disclosure of Invention
In view of the above, the present invention provides a method for manufacturing a solar cell selective doping structure and a solar cell, so as to solve the problems of pollution, complex operation and resource waste caused by the conventional manufacturing method.
In order to achieve the purpose, the technical scheme of the invention is realized as follows:
a method of fabricating a solar cell selective doping structure, the method comprising:
carrying out surface topography treatment on a silicon wafer substrate to obtain a surface-treated silicon wafer;
in a vacuum evaporation device, carrying out doping source localized deposition on the surface treatment silicon wafer to obtain a localized deposition silicon wafer;
placing the localized deposition silicon wafer in a diffusion furnace to heavily dope the localized deposition silicon wafer to obtain a heavily-doped localized deposition silicon wafer;
and introducing a gaseous source into the diffusion furnace to carry out full-surface shallow doping on the heavily-doped localized deposition silicon wafer to obtain the silicon wafer with the selective doping structure.
Further, the step of performing dopant source localized deposition on the surface-treated silicon wafer in a vacuum evaporation device to obtain a localized deposition silicon wafer includes:
placing the surface treatment silicon wafer on a substrate of the vacuum evaporation device, wherein one surface to be deposited of the surface treatment silicon wafer is in contact with the substrate; the substrate is of a localized hollow structure, and the width of the hollow is 5-60 mu m;
placing a solid-state doping source in a crucible of the vacuum evaporation device;
evacuating a chamber in the vacuum evaporation deviceThe pressure of the vacuum pumping is less than or equal to 1 multiplied by 10-2Pa；
Heating the substrate and the surface treatment silicon wafer to 50-350 ℃;
heating the solid-state doping source to 200-1800 ℃ by a heating device to carry out evaporation deposition on the surface treatment silicon wafer to obtain the localized deposition silicon wafer; wherein the deposition time is 1min-100 min.
Furthermore, at least one accommodating groove is formed in the substrate, and one accommodating groove is used for accommodating one surface treatment silicon wafer.
Furthermore, a cover plate is additionally arranged on the other surface of the surface treatment silicon wafer.
Further, the step of placing the localized deposition silicon wafer in a diffusion furnace to heavily dope the localized deposition silicon wafer to obtain a heavily-doped localized deposition silicon wafer includes:
placing the localized deposition silicon wafer on a diffusion quartz boat, and conveying the localized deposition silicon wafer into the diffusion furnace;
heating the diffusion furnace to 750-1050 ℃, and advancing at constant temperature for 1-120 min to perform high-temperature diffusion on the localized deposition silicon wafer so as to realize heavy doping and obtain the heavy-doped localized deposition silicon wafer;
and introducing a gaseous source into the diffusion furnace to carry out full-surface shallow doping on the heavily-doped localized deposition silicon wafer to obtain a selective doping structure, wherein the step comprises the following steps of:
cooling the diffusion furnace to 750-900 ℃, and introducing O2And a gaseous doping source, so that the doping source is deposited on the whole surface of the substrate of the heavily-doped localized deposition silicon wafer; wherein, O2The flow rate is 10sccm-1000sccm, the flow rate of the small nitrogen carrying the gaseous doping source is 10sccm-1000sccm, and the duration is 1min-80 min;
and heating the diffusion furnace to 800-1000 ℃, and advancing at constant temperature for 5-60 min to realize the full-surface shallow doping to obtain the silicon wafer with the selective doping structure.
Further, the surface topography treatment comprises: a surface texturing process, wherein the surface texturing process comprises:
soaking and cleaning the silicon wafer substrate in aqueous alkali with the concentration of 1-20% and the temperature of 75-90 ℃ for 1-10min, and cleaning off a damaged layer caused by diamond wire cutting to obtain an S1-1 silicon wafer substrate;
placing the S1-1 silicon wafer substrate in deionized water at the temperature of 50-70 ℃ to remove attached impurity ions to obtain an S1-2 silicon wafer substrate;
putting the S1-2 silicon wafer substrate into an alkali solution with an additive, wherein the alkali solution has the concentration of 1% -10% and the temperature of 80-90 ℃ for 1-5min for texturing to obtain an S1-3 silicon wafer substrate;
placing the S1-3 silicon wafer substrate in alkali and H2O2Removing organic residues in the mixed aqueous solution to obtain an S1-4 silicon wafer substrate;
placing the S1-4 silicon wafer substrate in a mixed aqueous solution of HF and HCl, and removing a surface oxide layer and metal ions to obtain an S1-5 silicon wafer substrate;
placing the S1-5 silicon wafer substrate in a slow pulling groove for water washing to obtain an S1-6 silicon wafer substrate; wherein the temperature of the water washing is 50-70 ℃, and the time is 10s-20 min;
and (3) placing the S1-6 silicon wafer substrate in a drying tank for drying, and performing nitrogen purging to obtain the surface-treated silicon wafer.
Further, the surface topography treatment comprises: a surface polishing treatment, wherein the surface polishing treatment comprises:
soaking and cleaning the silicon wafer substrate in aqueous alkali with the concentration of 1-20% and the temperature of 75-90 ℃ for 1-10min, and cleaning off a damaged layer caused by diamond wire cutting to obtain an S2-1 silicon wafer substrate;
placing the S2-1 silicon wafer substrate in deionized water at the temperature of 50-70 ℃ to remove attached impurity ions to obtain an S2-2 silicon wafer substrate;
placing the S2-2 silicon wafer substrate in aqueous alkali with the concentration of 15% -40% and the temperature of 80-90 ℃ for 1-5min to obtain an S2-3 silicon wafer substrate;
placing the S2-3 silicon wafer substrate in alkali and H2O2Removing organic residue from the mixed aqueous solutionObtaining an S2-4 silicon wafer substrate;
placing the S2-4 silicon wafer substrate in a mixed aqueous solution of HF and HCl, and removing a surface oxide layer and metal ions to obtain an S2-5 silicon wafer substrate;
placing the S2-5 silicon wafer substrate in a slow pulling groove for water washing to obtain an S2-6 silicon wafer substrate; wherein the temperature of the water washing is 50-70 ℃, and the time is 10s-20 min;
and (3) placing the S2-6 silicon wafer substrate in a drying tank for drying, and performing nitrogen purging to obtain the surface-treated silicon wafer.
Further, the surface topography treatment comprises: surface etching treatment, wherein the surface etching treatment comprises:
placing the silicon chip substrate in HF and HNO3Etching the silicon wafer substrate in the mixed solution of water to obtain an S3-1 silicon wafer substrate; wherein the HF and the HNO3The concentration of the active ingredients is 1 to 20 percent, the temperature is 20 to 50 ℃, and the duration is 1 to 10 min;
placing the S3-1 silicon wafer substrate in deionized water at the temperature of 30-60 ℃, and removing residual acid liquor to obtain a 3-2 silicon wafer substrate;
putting the S3-2 silicon wafer substrate into ammonia water with the concentration of 5-50% and the temperature of 20-60 ℃ to obtain an S3-3 silicon wafer substrate;
placing the S3-3 silicon wafer substrate in deionized water at the temperature of 30-60 ℃ to remove ammonia water residue on the surface to obtain a 3-4 silicon wafer substrate;
placing the S3-4 silicon wafer substrate in a slow pulling groove for water washing to obtain an S3-5 silicon wafer substrate; wherein the temperature of the water washing is 50-70 ℃, and the time is 10s-20 min;
and (3) placing the S3-5 silicon wafer substrate in a drying tank for drying, and performing nitrogen purging to obtain the surface-treated silicon wafer.
Further, the silicon wafer substrate is an N-type or P-type monocrystalline silicon substrate; the resistivity of the N-type monocrystalline silicon substrate is 0.1-3.5 omega-cm, and the resistivity of the P-type monocrystalline silicon substrate is 0.1-5 omega-cm.
Compared with the prior art, the preparation method of the solar cell selective doping structure has the following advantages:
according to the preparation method of the solar cell selective doping structure provided by the embodiment of the invention, the selective doping structure is prepared by the process of carrying out the localized deposition of the doping source on the silicon wafer substrate in the vacuum evaporation device, carrying out the high-temperature diffusion on the localized deposition region of the doping source to realize the heavy doping, and then introducing the gas source into the diffusion furnace for the step-by-step diffusion, so as to realize the shallow doping on the whole surface. When the selective doping structure is prepared, the vacuum evaporation device is always in a clean state, damage and open-circuit voltage loss to the monocrystalline silicon substrate of the solar cell are avoided, and the performance of the cell is effectively ensured; other impurities cannot be introduced, so that the performance of the battery cannot be influenced by pollution, and the continuous production is facilitated; the whole process is simple to operate, is suitable for large-scale production, and cannot cause excessive resource waste.
The invention also aims to provide a solar cell to solve the problems of pollution, complex operation and resource waste caused by the existing preparation method.
In order to achieve the purpose, the technical scheme of the invention is realized as follows:
a solar cell piece comprises a silicon wafer, wherein the selective doping structure prepared according to the preparation method is prepared on the silicon wafer.
Compared with the prior art, the solar cell has the same advantages as the preparation method, and the details are not repeated herein.
Drawings
The accompanying drawings, which are incorporated in and constitute a part of this specification, illustrate an embodiment of the invention and, together with the description, serve to explain the invention and not to limit the invention. In the drawings:
fig. 1 is a flowchart illustrating steps of a method for fabricating a solar cell selective doping structure according to an embodiment of the present invention;
FIG. 2 is a schematic view of a surface-treated silicon wafer in a vacuum deposition apparatus according to an embodiment of the present invention;
fig. 3 is a schematic structural diagram of a substrate according to an embodiment of the invention;
FIG. 4 is a schematic structural diagram of a surface-treated silicon wafer after surface texturing according to an embodiment of the present invention;
FIG. 5 is a schematic structural diagram of a surface-treated silicon wafer after surface polishing treatment according to an embodiment of the present invention;
FIG. 6 is a schematic structural diagram of a surface-treated silicon wafer after surface etching treatment according to an embodiment of the present invention;
FIG. 7 is a schematic structural diagram of a localized deposition silicon wafer according to an embodiment of the present invention;
FIG. 8 is a schematic structural diagram of a heavily doped localized deposition silicon wafer according to an embodiment of the present invention;
fig. 9 is a schematic structural diagram of a silicon wafer with a selectively doped structure according to an embodiment of the present invention.
Description of reference numerals:
20-substrate, 201-accommodating groove, 30-surface treatment silicon wafer, 40-cover plate, 50-localized deposition silicon wafer, 60-heavily doped localized deposition silicon wafer and 70-selective doping structure silicon wafer.
Detailed Description
It should be noted that the embodiments and features of the embodiments may be combined with each other without conflict.
The present invention will be described in detail below with reference to the embodiments with reference to the attached drawings.
The embodiment of the invention provides a preparation method of a selective doping structure of a solar cell, which is used for preparing the selective doping structure on a silicon wafer of the solar cell. Referring to fig. 1, a flowchart illustrating steps of a method for manufacturing a solar cell selective doping structure according to an embodiment of the present invention is shown. As shown in fig. 1, the method for preparing the solar cell selective doping structure may specifically include:
and 101, carrying out surface topography treatment on the silicon wafer substrate to obtain a surface-treated silicon wafer.
The silicon wafer is a main substrate material in the solar cell, and the silicon wafer substrate selected by the embodiment of the invention is a commonly used N-type or P-type monocrystalline silicon substrate; the resistivity of the N-type monocrystalline silicon substrate is 0.1-3.5 omega-cm, and the resistivity of the P-type monocrystalline silicon substrate is 0.1-5 omega-cm.
Before the selective doping structure is prepared on the silicon wafer, the surface topography of the silicon wafer substrate needs to be processed, so that the utilization rate of light energy is increased, or unnecessary winding doping is removed.
In practical applications, the surface topography processing may be performed in various manners, such as surface texturing, surface polishing, or surface etching, wherein the surface texturing is performed by using a light-trapping pyramid structure to increase the light energy utilization rate, the surface etching and surface polishing are generally performed on the back surface of the cell, the surface etching is mainly performed by removing the back surface doping by an acid method, and the polishing of the back surface can increase the back surface internal reflection, so that the light energy is reflected back to the silicon wafer substrate again and absorbed and utilized, and the surface state density and recombination of the silicon crystal are reduced. According to the embodiment of the invention, the unnecessary doping on the silicon wafer substrate can be removed by firstly carrying out surface topography treatment on the silicon wafer substrate, so that a foundation is provided for the preparation of a selective doping structure.
And 102, carrying out doping source localized deposition on the surface treatment silicon wafer in a vacuum evaporation device to obtain a localized deposition silicon wafer.
In the embodiment of the invention, in order to deposit the specific region of the surface-treated silicon wafer obtained in the step 101, the heavy doping of selective doping is realized, and the heavy doping can form low contact resistance with a metal grid line printed subsequently, so that the current resistance loss is reduced. The specific area refers to the position and the size of the area below the grid line printing position of the silicon wafer, so that the subsequent grid line printing overlapping and removing are facilitated. In practical applications, the method for localized deposition of a dopant source according to the embodiment of the present invention mainly includes:
and (4) placing the surface treatment silicon wafer obtained in the step (101) on a substrate of the vacuum evaporation device, wherein the surface to be deposited of the surface treatment silicon wafer is in contact with the substrate. The substrate is of a localized hollow structure, a crucible of the vacuum evaporation device is arranged below the substrate, the solid-state doping source is arranged in the crucible of the vacuum evaporation device, the crucible can be used for evaporating the solid-state doping source through heating, and therefore the evaporated doping source is deposited on the surface to be deposited of the surface treatment silicon wafer through the hollow region so as to achieve localized deposition of the doping source and obtain the localized deposition silicon wafer.
In practice, the solid dopant source may be boron oxide or phosphorus oxide, e.g., B2O3Or P2O5. When the solid doping source is boron oxide, boron doping localized deposition can be carried out on the surface treatment silicon wafer; when the solid doping source is phosphorus oxide, phosphorus doping localized deposition can be carried out on the surface treatment silicon wafer. In the specific operation, the selection may be performed according to needs, and this is not specifically limited in the embodiment of the present invention.
According to the method for localized deposition of the doping source, provided by the embodiment of the invention, the surface treatment silicon wafer arranged on the substrate can be subjected to evaporation deposition through heating treatment, the operation is simple, and the surface treatment silicon wafer is only required to be arranged on the substrate with the hollow structure for heating. The damage and the open-circuit pressure loss to the surface treatment silicon chip can not be caused, and the performance of the surface treatment silicon chip is effectively ensured.
Specifically, the heating treatment means that the substrate and the surface-treated silicon wafer are heated to 50-350 ℃, wherein the temperature of the substrate and the surface-treated silicon wafer is lower than the evaporation temperature of the solid doping source, so that a gaseous evaporation source can be condensed on the silicon wafer substrate. The substrate and the surface-treated silicon wafer may be heated by a heating device, for example, the heating device may be disposed around the substrate and the surface-treated silicon wafer to heat the substrate and the surface-treated silicon wafer.
Optionally, the heating device comprises: electron beam heating means, laser beam heating means, high-frequency induction heating means, and the like; wherein, the electron beam and laser beam heating device is arranged at the outer side of the vacuum evaporation device, and the high-frequency induction heating device is arranged at the inner side of the vacuum evaporation device.
And after the substrate and the surface treatment silicon wafer are heated to stable temperature, heating the solid-state doping source to 200-1800 ℃ by a heating device to carry out evaporation deposition on the surface treatment silicon wafer so as to obtain the localized deposition silicon wafer. Specifically, heating may be performed by an electron gun emitting an electron beam, or heating may be performed by a laser emitting a laser beam, or heating may be performed by a high-frequency induction magnetic field. Because the heating speed of the electron beam, the laser beam and the magnetic field is higher, the solid-state doping source can be rapidly heated and evaporated through the electron beam, the laser beam or the magnetic field, the evaporation and deposition time is shortened, the temperature change of the substrate and the surface treatment silicon wafer caused by long-time evaporation and deposition is avoided, and the evaporation and deposition efficiency and quality are improved.
In practical application, the temperature stabilization means that the temperature does not fluctuate more than 1 ℃ after the heated temperature is reached for 1 min.
In practical applications, the specific deposition time may be set according to practical situations, for example, the deposition time is 1min to 100min, and the specific deposition time is not limited in the embodiments of the present invention.
In the embodiment of the invention, before the heating treatment, the chamber in the vacuum evaporation device needs to be vacuumized to ensure that other impurities are not introduced when the selective doping structure is prepared, and the vacuum evaporation device is always in a clean state, so that the influence on the performance of the finally prepared solar cell is reduced. In the whole preparation process, the only solid-state doping source possibly generated by ionization or pyrolysis can be oxidized into corresponding oxide, and the selective doping structure can not be influenced by exhausting along with air exhaust.
In practical application, a water-cooled copper crucible can be selected as the crucible to avoid pollution caused by evaporation of materials in the crucible during electron beam evaporation. In addition, the pressure of the vacuum pumping is less than or equal to 1 multiplied by 10-2Pa to reduce the interference of impurity gas molecules in the deposition process, and is beneficial to improving the purity and uniformity of deposition.
According to the method for the localized deposition of the doping source provided by the embodiment of the invention, the vacuum evaporation device is used for carrying out evaporation deposition on the surface treatment silicon wafer on the substrate with the hollow structure, the operation is simple, the damage and the open-circuit loss to the surface treatment silicon wafer can not be caused, and the performance of the surface treatment silicon wafer is effectively ensured. And other impurities can not be introduced in the whole process, the vacuum evaporation device is always in a clean state, the performance of the prepared solar cell can not be influenced too much, and the continuous production can be realized.
In practical application, referring to fig. 2, a schematic position diagram of a surface-treated silicon wafer in a vacuum evaporation apparatus according to an embodiment of the present invention is shown. As shown in fig. 2, the surface-treated silicon wafer 30 is placed on the substrate 20, one surface of the surface-treated silicon wafer 30 contacts the substrate 20, and a cover plate 40 is additionally provided on the other surface of the surface-treated silicon wafer 30.
Specifically, the one side that the surface treatment silicon chip 30 contacts the base plate 20 is the one side that needs the deposit, through setting up the base plate 20 to the hollow out construction of localization, can realize the deposition of localization to the surface treatment silicon chip 30, wherein, the base plate 20 can adopt and locate the fretwork at the position that needs the printing grid line to only realize the deposition of localization at the position that the surface treatment silicon chip 30 needs the printing grid line, easy operation. According to the position and the size of the deposition, the deposition of the target area can be achieved only by processing the structure of the substrate 20, special operation is not needed, and the process is simplified. By additionally arranging the cover plate 40 on the other side of the surface-treated silicon wafer 30, which does not need to be deposited, the side which does not need to be deposited can be prevented from being polluted by the evaporated doping source.
In practical application, the width of fretwork can be set according to actual need, for example: 5 μm to 60 μm, and the hollow width of the substrate 20 is not particularly limited in the embodiment of the present invention.
In order to improve the production efficiency, an embodiment of the present invention further provides a substrate, and fig. 3 is a schematic structural diagram of the substrate according to the embodiment of the present invention. The substrate 20 is provided with at least one accommodating groove 201, and one accommodating groove 201 is used for accommodating one surface-treated silicon wafer 30. That is, when the surface treatment silicon wafer 30 is subjected to localized deposition, a plurality of surface treatment silicon wafers 30 may be simultaneously deposited, thereby achieving mass production and improving the processing efficiency. In the embodiment of the present invention, as shown in fig. 3, six accommodating grooves 201 are formed in the substrate 20, so that a plurality of surface-treated silicon wafers 30 within six can be deposited simultaneously.
In practical applications, the substrate 20 is generally rectangular, and the length and width of the substrate 20 may be determined according to the number of the accommodating grooves 201, for example, the length and width of the substrate 20 may be between 100mm and 2000 mm. The embodiment of the present invention does not limit the specific size of the substrate 20.
103, placing the localized deposition silicon wafer in a diffusion furnace to heavily dope the localized deposition silicon wafer to obtain a heavily-doped localized deposition silicon wafer.
The heavy doping refers to the preparation of a high-concentration doping source in a contact area where a metal electrode needs to be printed in the preparation process of the solar cell, so that the contact resistance of the cell is reduced, and the electrical loss is reduced. Wherein the contact area needs to be designed on the substrate 20 in advance to facilitate alignment during subsequent electrode printing. In the embodiment of the invention, the heavily doping method comprises the following steps:
in practical application, the method also needs to comprise the following steps: the quartz boat is a silicon wafer bearing body, and the conveying device is used for conveying the quartz boat into the diffusion furnace. And conveying the localized deposition silicon wafer into the diffusion furnace by placing the localized deposition silicon wafer on a quartz boat. And heating the diffusion furnace to 750-1050 ℃, and pushing at constant temperature for 1-120 min to perform high-temperature diffusion on the localized deposition silicon wafer, so that the solid-state doping source of the deposition region reacts with silicon on the surface of the substrate of the solar cell silicon wafer to generate elemental doping atoms, and heavy doping is formed under the action of high-temperature pushing to obtain the heavy-doped localized deposition silicon wafer.
According to the embodiment of the invention, the hollow substrate is adopted for carrying out heavy doping on the localized deposition silicon wafer by vacuum evaporation, so that the damage to the silicon wafer and the pollution of impurities are reduced, a selective doping structure can be better prepared, the cleanliness of the silicon wafer is improved, and the performance of a battery is effectively improved.
And 104, introducing a gaseous source into the diffusion furnace to perform full-surface shallow doping on the heavily-doped localized deposition silicon wafer to obtain a silicon wafer with a selective doping structure.
Shallow doping means that impurities with small concentration are formed in a non-metal electrode contact area of the solar cell, auger recombination is reduced by reducing doping concentration, and the on-voltage is improved, so that the purpose of integrally improving the performance of the solar cell is achieved. The non-metal electrode contact region refers to a region outside the heavily doped silicon wafer, and the region does not need to be printed with an electrode. In the embodiment of the invention, the shallow doping method comprises the following steps:
cooling the diffusion furnace to 750-900 deg.c and introducing O2And small nitrogen carrying gaseous doping source to deposit the doping source on the whole surface of the substrate of the heavily doped localized deposition silicon wafer; wherein, O2The flow rate is 10sccm-1000sccm, the flow rate of the gaseous doping source small nitrogen is 10sccm-1000sccm, and the duration is 1min-80min, wherein the small nitrogen is used for volatilizing the boron source BBr in the liquid source3Or a source of phosphorus POCl3Carrying into a diffusion furnace to react and realize doping. In practical application, if the temperature of the diffusion furnace is too high, the impurity source is pushed along while depositing, and the prepared sample has poor uniformity due to the fact that the gaseous source cannot be completely and uniformly distributed in the pushing process, so that the performance of the battery is affected, therefore, the temperature of the diffusion furnace is reduced to 750-900 ℃ in the step, and the gaseous doping source and O are mixed2The reaction produces a dopant source oxide P2O5Or B2O3. And then, heating the diffusion furnace to 800-1000 ℃ to facilitate high-temperature propulsion after deposition, propelling an impurity source deposited on the surface into the silicon crystal, and realizing doping through impurity activation. And the constant temperature is kept for 5-60 min to realize the full-surface shallow doping, the heavy doping region is not influenced, the deposition of the heavy doping region is enhanced, and the doping of the heavy doping region is enhanced to obtain the selective doping structure. And finally, cooling the diffusion furnace to 750-900 ℃, and taking out the selective doping structure.
According to the embodiment of the invention, by carrying out the full-surface shallow doping on the heavily-doped localized deposition silicon wafer, the contradiction that the metal contact region needs to be heavily doped and the non-metal contact region does not need to be heavily doped in the existing non-selective doping structure battery can be solved, and the effect of improving the performance of the solar battery can be achieved.
In summary, the method for preparing the solar cell selective doping structure according to the embodiment of the invention at least includes the following advantages:
according to the preparation method of the solar cell selective doping structure provided by the embodiment of the invention, the selective doping structure is prepared by the process of carrying out the localized deposition of the doping source on the silicon wafer substrate in the vacuum evaporation device, carrying out the high-temperature diffusion on the localized deposition region of the doping source to realize the heavy doping, and then introducing the gas source into the diffusion furnace for the step-by-step diffusion, so as to realize the shallow doping on the whole surface. When the selective doping structure is prepared, the vacuum evaporation device is always in a clean state, damage and open-circuit voltage loss to the monocrystalline silicon substrate of the solar cell are avoided, and the performance of the cell is effectively ensured; other impurities cannot be introduced, so that the performance of the battery cannot be influenced by pollution, and the continuous production is facilitated; the whole process is simple to operate, is suitable for large-scale production, and cannot cause excessive resource waste.
In this embodiment of the present invention, the surface topography processing of step 101 may be one of surface texturing processing, surface polishing processing, or surface etching processing. Each processing method will now be described in detail:
the surface texturing treatment comprises the following steps:
and soaking and cleaning the silicon wafer substrate in 1-20% aqueous alkali at the temperature of 75-90 ℃ for 1-10min to remove a damaged layer caused by diamond wire cutting, thereby obtaining the S1-1 silicon wafer substrate. The alkali solution may be KOH, NaOH, etc.
And (3) placing the S1-1 silicon wafer substrate in deionized water at the temperature of 50-70 ℃ to remove attached impurity ions, thereby obtaining an S1-2 silicon wafer substrate. Wherein the impurity ions may be metal ions.
And (3) putting the S1-2 silicon wafer substrate into an alkali solution with an additive, wherein the concentration of the alkali solution is 1% -10% and the temperature of the alkali solution is 80-90 ℃ for texturing for 1-5min to obtain the S1-3 silicon wafer substrate. Wherein the additive can be sodium citrate, sodium benzoate, surfactant and other substances. By adding the additive into the alkaline solution, the reaction speed of the alkali and the silicon can be slowed down, so that the reaction of the alkali and the silicon has crystal orientation, and a pyramid structure is further formed.
To improve process purity, the S1-3 wafer substrate may be washed with water, e.g., deionized or distilled water, without impurities.
Placing the S1-3 silicon wafer substrate in alkali and H2O2And removing organic residues in the mixed aqueous solution to obtain an S1-4 silicon wafer substrate. Wherein the water temperature can be 50-70 ℃ to clean impurities which are difficult to dissolve at a low temperature.
Putting the S1-4 silicon wafer substrate into deionized water or distilled water and other water without impurities for cleaning so as to clean residual alkali and H on the silicon wafer2O2. Wherein the water temperature can be 50-70 ℃ to clean impurities which are difficult to dissolve at a low temperature.
And (3) placing the S1-4 silicon wafer substrate in a mixed aqueous solution of HF and HCl, and removing a surface oxidation layer and metal ions generated in the previous step to obtain the S1-5 silicon wafer substrate.
The S1-5 wafer substrate is washed with water, for example, deionized water or distilled water, containing no impurities to wash away the acid solution such as HF and HCl remaining on the wafer.
Placing the S1-5 silicon wafer substrate in a slow pulling tank for water washing, and further washing away residual acid liquor to obtain an S1-6 silicon wafer substrate; wherein the temperature of the water washing is 50-70 ℃, and the time is 10s-20 min.
And (3) placing the S1-6 silicon wafer substrate in a drying tank for drying, purging with nitrogen, drying and taking out to obtain the surface-treated silicon wafer.
According to the embodiment of the invention, the pyramid light trapping structure can be utilized to improve the utilization rate of light energy and the performance of the solar cell by performing surface texturing treatment on the silicon wafer substrate. Fig. 4 is a schematic structural diagram of a surface-treated silicon wafer after surface texturing according to an embodiment of the present invention.
The surface polishing treatment comprises:
generally, before the polishing treatment, a surface not to be polished is oxidized, and the silicon surface is protected from reaction with an alkali by silicon oxide. Or, if double-sided polishing is performed at first, a pre-cleaning step for removing diamond wire cutting damage by alkali is required, and the specific polishing step depends on the battery flow.
In practical application, a mask is generally adopted for protection of a surface which does not need to be polished, and groove type soaking etching is carried out; or directly carrying out single-side etching by using chain floating.
Specifically, the silicon wafer substrate is soaked and cleaned in an alkali solution with the concentration of 1% -20% and the temperature of 75-90 ℃ for 1-10min, and a damaged layer caused by diamond wire cutting is cleaned off, so that the S2-1 silicon wafer substrate is obtained.
And (3) placing the S2-1 silicon wafer substrate in deionized water at the temperature of 50-70 ℃ to remove attached impurity ions, thereby obtaining an S2-2 silicon wafer substrate.
And (3) placing the S2-2 silicon wafer substrate in a KOH solution with the concentration of 15-40% and the temperature of 80-90 ℃ for 1-5min to obtain the S2-3 silicon wafer substrate.
To improve process purity, the S2-3 wafer substrate may be washed with water, e.g., deionized or distilled water, without impurities.
Placing the S2-3 silicon wafer substrate in alkali and H2O2And removing organic residues in the mixed aqueous solution to obtain an S2-4 silicon wafer substrate.
Putting the S2-4 silicon wafer substrate into deionized water or distilled water and other water without impurities for cleaning so as to clean residual alkali and H on the silicon wafer2O2。
And (3) placing the S2-4 silicon wafer substrate in a mixed aqueous solution of HF and HCl, and removing a surface oxidation layer and metal ions to obtain the S2-5 silicon wafer substrate.
The S2-5 wafer substrate is washed with water, for example, deionized water or distilled water, containing no impurities to wash away the acid solution such as HF and HCl remaining on the wafer.
Placing the S2-5 silicon wafer substrate in a slow pulling groove for water washing to obtain an S2-6 silicon wafer substrate; wherein the temperature of the water washing is 50-70 ℃, and the time is 10s-20 min.
And (3) placing the S2-6 silicon wafer substrate in a drying tank for drying, purging with nitrogen, drying and taking out to obtain the surface-treated silicon wafer.
Different from the surface texturing treatment, the surface polishing treatment is to place the S2-2 silicon wafer substrate in an alkaline solution without additives, and through the rapid reaction of the alkaline and the silicon, the crystal orientation is avoided, and the purpose of polishing is achieved.
According to the embodiment of the invention, the silicon wafer substrate is subjected to surface polishing treatment, so that the internal reflection of the silicon wafer can be increased, and the utilization rate of light energy is improved. Fig. 5 is a schematic structural diagram of a surface-treated silicon wafer after surface polishing treatment according to an embodiment of the present invention.
The surface etching treatment comprises the following steps:
placing the silicon chip substrate in HF and HNO3Etching in the mixed solution of water, and when the surface which does not need to be etched is protected by a mask, etching can be carried out by adopting groove type soaking; when the surface which does not need to be etched is protected without a mask, chain type single-surface etching, HF and HNO are adopted3The liquid level of the mixed solution with water is flush with the plane of the roller, the silicon wafer is horizontally placed on the roller, the upper surface of the silicon wafer is covered by a water film to protect the upper surface which does not need to be etched, and the lower surface of the silicon wafer is conveyed to HF and HNO by the roller3And water. HNO3Oxidizing silicon wafer into SiO2HF followed by SiO2Reacting to remove SiO on the surface2Repeating the steps to etch the silicon wafer. Then obtaining an S3-1 silicon wafer substrate; wherein the HF and the HNO3The concentration of the active ingredients is 1 to 20 percent, the temperature is 20 to 50 ℃, and the duration is 1 to 10 min.
And (3) placing the S3-1 silicon wafer substrate in deionized water at the temperature of 30-60 ℃ to remove residual acid liquor, thus obtaining a 3-2 silicon wafer substrate.
And (3) putting the S3-2 silicon wafer substrate into ammonia water with the concentration of 5-50% and the temperature of 20-60 ℃ to remove porous silicon formed on the surface of the silicon wafer substrate in the acid etching process, thereby obtaining the S3-3 silicon wafer substrate.
Placing the S3-3 silicon wafer substrate in deionized water at the temperature of 30-60 ℃ to remove ammonia water residue on the surface to obtain a 3-4 silicon wafer substrate;
placing the S3-4 silicon wafer substrate in a slow pulling groove for water washing to obtain an S3-5 silicon wafer substrate; wherein the temperature of the water washing is 50-70 ℃, and the time is 10s-20 min.
And (3) placing the S3-5 silicon wafer substrate in a drying tank for drying, purging with nitrogen, drying and taking out to obtain the surface-treated silicon wafer.
According to the embodiment of the invention, the doping extending to the other side during diffusion can be removed by performing surface etching treatment on the silicon chip substrate, and the extending is removed by acid etching, so that an etching surface is finally formed. Fig. 6 is a schematic structural diagram of a surface-treated silicon wafer after surface etching treatment according to an embodiment of the present invention.
In the embodiment of the present invention, taking surface polishing treatment as an example, the surface-treated silicon wafer 30 is subjected to step 102 to obtain a localized deposited silicon wafer 50, the localized deposited silicon wafer 50 is subjected to step 103 to obtain a heavily doped localized deposited silicon wafer 60, and the heavily doped localized deposited silicon wafer 60 is subjected to step 104 to obtain a selectively doped structured silicon wafer 70. Referring to fig. 7, a schematic structural diagram of a localized deposition silicon wafer according to an embodiment of the present invention is shown. Referring to fig. 8, a schematic structural diagram of a heavily doped localized deposition silicon wafer according to an embodiment of the present invention is shown. Referring to fig. 9, a schematic structural diagram of a silicon wafer with a selectively doped structure according to an embodiment of the present invention is shown.
The embodiment of the invention also provides a solar cell, which comprises a silicon wafer, wherein the selective doping structure prepared by the preparation method of the solar cell selective doping structure according to the embodiment is prepared on the silicon wafer; the specific steps and operation methods of the preparation method have been described in detail in the foregoing embodiments, and are not repeated herein.
According to the solar cell provided by the embodiment of the invention, the selective doping structure is prepared on the silicon wafer by the preparation method of the solar cell selective doping structure, so that damage and open-circuit voltage loss to a monocrystalline silicon substrate of the solar cell are avoided, and the performance of the cell is effectively ensured; other impurities cannot be introduced, so that the performance of the battery cannot be influenced by pollution, and the continuous production is facilitated; the whole operation is simple, the method is suitable for large-scale production, and excessive resource waste can not be caused.
The above description is only for the purpose of illustrating the preferred embodiments of the present invention and is not to be construed as limiting the invention, and any modifications, equivalents, improvements and the like that fall within the spirit and principle of the present invention are intended to be included therein.
Claims (10)
1. A preparation method of a solar cell selective doping structure is characterized by comprising the following steps:
carrying out surface topography treatment on a silicon wafer substrate to obtain a surface-treated silicon wafer;
in a vacuum evaporation device, carrying out doping source localized deposition on the surface treatment silicon wafer to obtain a localized deposition silicon wafer;
placing the localized deposition silicon wafer in a diffusion furnace to heavily dope the localized deposition silicon wafer to obtain a heavily-doped localized deposition silicon wafer;
and introducing a gaseous source into the diffusion furnace to carry out full-surface shallow doping on the heavily-doped localized deposition silicon wafer to obtain the silicon wafer with the selective doping structure.
2. The method according to claim 1, wherein the step of performing dopant source localized deposition on the surface-treated silicon wafer in a vacuum evaporation device to obtain a localized deposition silicon wafer comprises:
placing the surface treatment silicon wafer on a substrate of the vacuum evaporation device, wherein one surface to be deposited of the surface treatment silicon wafer is in contact with the substrate; the substrate is of a localized hollow structure, and the width of the hollow is 5-60 mu m;
placing a solid-state doping source in a crucible of the vacuum evaporation device;
vacuumizing a cavity in the vacuum evaporation device, wherein the vacuumizing pressure is less than or equal to 1 x 10-2Pa；
Heating the substrate and the surface treatment silicon wafer to 50-350 ℃;
heating the solid-state doping source to 200-1800 ℃ by a heating device to carry out evaporation deposition on the surface treatment silicon wafer to obtain the localized deposition silicon wafer; wherein the deposition time is 1min-100 min.
3. The method according to claim 2, wherein the substrate is provided with at least one accommodating groove, and one accommodating groove accommodates one of the surface-treated silicon wafers.
4. The method according to claim 2, wherein a cover plate is provided on the other surface of the surface-treated silicon wafer.
5. The preparation method according to claim 1 or 2, wherein the step of placing the localized deposition silicon wafer in a diffusion furnace to heavily dope the localized deposition silicon wafer to obtain a heavily-doped localized deposition silicon wafer comprises:
placing the localized deposition silicon wafer on a diffusion quartz boat, and conveying the localized deposition silicon wafer into the diffusion furnace;
heating the diffusion furnace to 750-1050 ℃, and advancing at constant temperature for 1-120 min to perform high-temperature diffusion on the localized deposition silicon wafer so as to realize heavy doping and obtain the heavy-doped localized deposition silicon wafer;
the step of introducing a gaseous source into the diffusion furnace to carry out full-surface shallow doping on the heavily-doped localized deposition silicon wafer to obtain a selective doping structure comprises the following steps:
cooling the diffusion furnace to 750-900 ℃, and introducing O2And a gaseous doping source, so that the doping source is deposited on the whole surface of the substrate of the heavily-doped localized deposition silicon wafer; wherein, O2The flow rate is 10sccm-1000sccm, the flow rate of the small nitrogen carrying the gaseous doping source is 10sccm-1000sccm, and the duration is 1min-80 min;
and heating the diffusion furnace to 800-1000 ℃, and advancing at constant temperature for 5-60 min to realize the full-surface shallow doping to obtain the silicon wafer with the selective doping structure.
6. The method of claim 1, wherein the surface topography treatment comprises: a surface texturing process, wherein the surface texturing process comprises:
soaking and cleaning the silicon wafer substrate in aqueous alkali with the concentration of 1-20% and the temperature of 75-90 ℃ for 1-10min, and cleaning off a damaged layer caused by diamond wire cutting to obtain an S1-1 silicon wafer substrate;
placing the S1-1 silicon wafer substrate in deionized water at the temperature of 50-70 ℃ to remove attached impurity ions to obtain an S1-2 silicon wafer substrate;
putting the S1-2 silicon wafer substrate into an alkali solution with an additive, wherein the alkali solution has the concentration of 1% -10% and the temperature of 80-90 ℃ for 1-5min for texturing to obtain an S1-3 silicon wafer substrate;
placing the S1-3 silicon wafer substrate in alkali and H2O2Removing organic residues in the mixed aqueous solution to obtain an S1-4 silicon wafer substrate;
placing the S1-4 silicon wafer substrate in a mixed aqueous solution of HF and HCl, and removing a surface oxide layer and metal ions to obtain an S1-5 silicon wafer substrate;
placing the S1-5 silicon wafer substrate in a slow pulling groove for water washing to obtain an S1-6 silicon wafer substrate; wherein the temperature of the water washing is 50-70 ℃, and the time is 10s-20 min;
and (3) placing the S1-6 silicon wafer substrate in a drying tank for drying, and performing nitrogen purging to obtain the surface-treated silicon wafer.
7. The method of claim 1, wherein the surface topography treatment comprises: a surface polishing treatment, wherein the surface polishing treatment comprises:
soaking and cleaning the silicon wafer substrate in aqueous alkali with the concentration of 1-20% and the temperature of 75-90 ℃ for 1-10min, and cleaning off a damaged layer caused by diamond wire cutting to obtain an S2-1 silicon wafer substrate;
placing the S2-1 silicon wafer substrate in deionized water at the temperature of 50-70 ℃ to remove attached impurity ions to obtain an S2-2 silicon wafer substrate;
placing the S2-2 silicon wafer substrate in aqueous alkali with the concentration of 15% -40% and the temperature of 80-90 ℃ for 1-5min to obtain an S2-3 silicon wafer substrate;
placing the S2-3 silicon wafer substrate in alkali and H2O2Removing organic residues in the mixed aqueous solution to obtain an S2-4 silicon wafer substrate;
placing the S2-4 silicon wafer substrate in a mixed aqueous solution of HF and HCl, and removing a surface oxide layer and metal ions to obtain an S2-5 silicon wafer substrate;
placing the S2-5 silicon wafer substrate in a slow pulling groove for water washing to obtain an S2-6 silicon wafer substrate; wherein the temperature of the water washing is 50-70 ℃, and the time is 10s-20 min;
and (3) placing the S2-6 silicon wafer substrate in a drying tank for drying, and performing nitrogen purging to obtain the surface-treated silicon wafer.
8. The method of claim 1, wherein the surface topography treatment comprises: surface etching treatment, wherein the surface etching treatment comprises:
placing the silicon chip substrate in HF and HNO3Etching the silicon wafer substrate in the mixed solution of water to obtain an S3-1 silicon wafer substrate; wherein the HF and the HNO3The concentration of the active ingredients is 1 to 20 percent, the temperature is 20 to 50 ℃, and the duration is 1 to 10 min;
placing the S3-1 silicon wafer substrate in deionized water at the temperature of 30-60 ℃, and removing residual acid liquor to obtain a 3-2 silicon wafer substrate;
putting the S3-2 silicon wafer substrate into ammonia water with the concentration of 5-50% and the temperature of 20-60 ℃ to obtain an S3-3 silicon wafer substrate;
placing the S3-3 silicon wafer substrate in deionized water at the temperature of 30-60 ℃ to remove ammonia water residue on the surface to obtain a 3-4 silicon wafer substrate;
placing the S3-4 silicon wafer substrate in a slow pulling groove for water washing to obtain an S3-5 silicon wafer substrate; wherein the temperature of the water washing is 50-70 ℃, and the time is 10s-20 min;
and (3) placing the S3-5 silicon wafer substrate in a drying tank for drying, and performing nitrogen purging to obtain the surface-treated silicon wafer.
9. The production method according to claim 1, wherein the silicon wafer substrate is an N-type or P-type single crystal silicon substrate; the resistivity of the N-type monocrystalline silicon substrate is 0.1-3.5 omega-cm, and the resistivity of the P-type monocrystalline silicon substrate is 0.1-5 omega-cm.
10. A solar cell comprising a silicon wafer on which a selectively doped structure produced by the production method according to any one of claims 1 to 9 is produced.
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