CN113517211B - Semiconductor processing equipment and film deposition method - Google Patents
Semiconductor processing equipment and film deposition method Download PDFInfo
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- CN113517211B CN113517211B CN202110413686.7A CN202110413686A CN113517211B CN 113517211 B CN113517211 B CN 113517211B CN 202110413686 A CN202110413686 A CN 202110413686A CN 113517211 B CN113517211 B CN 113517211B
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 49
- 238000000151 deposition Methods 0.000 title claims abstract description 6
- 238000001816 cooling Methods 0.000 claims abstract description 298
- 238000000034 method Methods 0.000 claims abstract description 116
- 239000007788 liquid Substances 0.000 claims description 79
- 239000007789 gas Substances 0.000 claims description 73
- 239000000112 cooling gas Substances 0.000 claims description 39
- 239000000110 cooling liquid Substances 0.000 claims description 34
- 235000012431 wafers Nutrition 0.000 claims description 32
- 238000007736 thin film deposition technique Methods 0.000 claims description 10
- 238000000427 thin-film deposition Methods 0.000 claims description 6
- 239000010409 thin film Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 description 7
- 238000005240 physical vapour deposition Methods 0.000 description 5
- 230000005855 radiation Effects 0.000 description 4
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000003344 environmental pollutant Substances 0.000 description 2
- 239000010408 film Substances 0.000 description 2
- 231100000719 pollutant Toxicity 0.000 description 2
- 230000004308 accommodation Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000013077 target material Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/50—Substrate holders
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
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- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
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- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
The invention provides a semiconductor process device and a film deposition method, wherein the semiconductor process device comprises a process chamber, a bearing component and a cooling component, wherein the bearing component is movably arranged in the process chamber and is used for bearing a wafer; the cooling component is disposed in the process chamber and below the carrier component for cooling the carrier component as the carrier component moves closer to the cooling component. The semiconductor process equipment and the film deposition method provided by the invention can reduce the time required for cooling the bearing component to meet the process requirement, thereby improving the cooling efficiency and the productivity.
Description
Technical Field
The invention relates to the technical field of semiconductor equipment, in particular to semiconductor process equipment and a thin film deposition method.
Background
In a physical vapor deposition (Physical Vapor Deposition, abbreviated as PVD) process, along with the continuous bombardment of a target by a plasma in a process chamber, the target atoms are deposited on a Wafer (Wafer) and cause the temperature of the Wafer to rise rapidly, which requires an electrostatic chuck (Electrostatic Chuck, abbreviated as ESC) for carrying the Wafer to conduct the heat of the Wafer (Wafer) away in time, so as to ensure that the temperature of the Wafer can be maintained within a process temperature range, thereby ensuring the stability of a process result. The temperature rise of the wafer also causes the temperature rise of the electrostatic chuck, so it is important how to ensure the temperature stability of the electrostatic chuck.
In the prior art, after one or more wafers are subjected to a physical vapor deposition process, a cooling process is usually performed, i.e., the deposition process is stopped, the electrostatic chuck is allowed to stand still for cooling, or a room temperature process gas is introduced into the process chamber from an air inlet of the process chamber to cool the electrostatic chuck. However, this cooling method generally requires a cooling time of more than 500 seconds to restore the temperature of the electrostatic chuck to a normal temperature, and the cooling efficiency is low, which greatly affects the productivity of the semiconductor device.
Disclosure of Invention
The invention aims to at least solve one of the technical problems in the prior art, and provides a semiconductor process device and a film deposition method, which can reduce the time required for cooling a bearing part to meet the process requirement, thereby improving the cooling efficiency and the productivity.
In order to achieve the object of the invention, a semiconductor process apparatus is provided, comprising a process chamber, a carrier part and a cooling part, wherein,
The bearing component is movably arranged in the process chamber and is used for bearing a wafer;
The cooling component is arranged in the process chamber and positioned below the bearing component and is used for cooling the bearing component when the bearing component moves to be close to the cooling component.
Optionally, the cooling component includes:
the cooling main body is arranged in the process chamber and positioned below the bearing component, and a liquid cooling channel and a gas cooling channel are formed in the cooling main body;
a support connected to the process chamber and the cooling body, respectively, for supporting the cooling body;
a liquid inlet pipe for introducing cooling liquid into the liquid cooling channel;
a liquid outlet pipe for leading out the cooling liquid from the liquid cooling channel;
an intake pipe for introducing cooling gas into the gas cooling passage;
a plurality of air outlet holes are formed in the side wall of the air cooling channel, and air outlets of the air outlet holes are formed in the top surface of the cooling main body.
Optionally, the cooling main body includes an annular cooling plate and an annular protrusion disposed at an edge of the cooling plate, the annular cooling plate is sleeved on a driving shaft of the bearing component, the annular cooling plate and the annular protrusion cooperate to form a containing groove for containing at least part of the bearing component, and air outlets of the air outlet holes are disposed on top surfaces of the annular cooling plate and the annular protrusion;
The support piece comprises a plurality of support columns, the support columns are uniformly distributed along the circumference of the annular cooling plate, one end of each support column is connected with the bottom wall of the annular cooling plate, and the other end of each support column is connected with the bottom wall of the process chamber.
Optionally, the radial dimension of the annular protrusion is greater than the radial dimension of the bearing member, and a gap is formed between an inner side wall of the annular protrusion and an outer side wall of the bearing member when the bearing member is accommodated in the accommodating groove.
Optionally, the liquid cooling channel and the gas cooling channel are both disposed in the annular cooling plate, and each include a plurality of concentric annular channels, and the annular channels of the liquid cooling channel and the annular channels of the gas cooling channel are alternately arranged.
Optionally, the gas cooling channel includes first ring channel, second ring channel, third ring channel, first connecting channel and the second connecting channel that are located on the coplanar, first ring channel the second ring channel the third ring channel is followed by the direction at annular cooling plate center to edge arranges in proper order, the second ring channel has a breach, first connecting channel passes through breach intercommunication first ring channel with third ring channel, the second connecting channel intercommunication second ring channel with third ring channel, the air inlet of gas cooling channel is seted up on the second connecting channel, set up first ring channel with on the second ring channel lateral wall the gas outlet of venthole is located on the top surface of annular cooling plate, set up on the third ring channel lateral wall the gas outlet of venthole is located on the top surface of annular arch.
Optionally, the liquid cooling channel and the gas cooling channel are located on the same plane, including fourth annular channel, fifth annular channel, third connecting channel and fourth connecting channel, fourth annular channel is located between the first annular channel and the second annular channel, fifth annular channel is located between the second annular channel and the third annular channel, fourth annular channel has a breach for first connecting channel passes through, fifth annular channel includes first channel section and second channel section, the inlet of liquid cooling channel has been seted up to the one end of first channel section, the other end passes through third connecting channel with the feed liquor end intercommunication of fourth annular channel, the liquid outlet of liquid cooling channel has been seted up to the one end of second channel section, the other end passes through fourth connecting channel with the feed liquor end intercommunication of fourth annular channel.
Optionally, the first annular channel, the second annular channel, the third annular channel, the fourth annular channel and the fifth annular channel are all circular, and the first channel section and the second channel section are circular arc-shaped.
The invention also provides a thin film deposition method which is applied to the semiconductor process equipment provided by the invention and comprises the following steps:
After performing a thin film deposition process on a predetermined number of wafers, moving a carrier for carrying the wafers to be close to a cooling part located below the carrier;
The cooling member cools the carrier member.
Optionally, the moving the carrier for carrying the wafer to be close to the cooling component located below the carrier includes:
moving the carrier member into a receiving slot on the cooling member;
the cooling of the carrier member by the cooling member includes:
introducing a cooling liquid into a liquid cooling channel in the cooling component;
And cooling gas is introduced into the gas cooling channel in the cooling component, and is introduced to the bottom surface, the side surface and/or the top surface of the bearing component through a plurality of air outlet holes formed in the side wall of the gas cooling channel.
The invention has the following beneficial effects:
according to the semiconductor process equipment provided by the invention, the cooling component is arranged below the bearing component in the process chamber, so that when the bearing component is required to be cooled, the bearing component is moved to be close to the cooling component to cool the bearing component by means of the cooling component, and compared with the mode that the bearing component is cooled by standing in the prior art, or the bearing component is cooled by introducing the process gas at room temperature into the process chamber, the time required for cooling the bearing component to meet the process requirement can be reduced, so that the cooling efficiency is improved, and the productivity is improved.
According to the thin film deposition method provided by the invention, by means of the semiconductor process equipment provided by the invention, after the thin film deposition process is carried out on the wafers with the preset number, the bearing component used for bearing the wafers can be moved to be close to the cooling component below the bearing component, so that the bearing component is cooled by the cooling component.
Drawings
Fig. 1 is a schematic structural diagram of a semiconductor processing apparatus according to an embodiment of the present invention;
FIG. 2 is a schematic diagram of a cooling component in a semiconductor processing apparatus according to an embodiment of the present invention;
FIG. 3 is a schematic view of the structure of the air outlet of the cooling component in the semiconductor processing apparatus according to the embodiment of the present invention;
FIG. 4 is a schematic perspective view of a liquid cooling channel and a gas cooling channel of a cooling component in a semiconductor processing apparatus according to an embodiment of the present invention;
FIG. 5 is a flow chart of a thin film deposition method according to an embodiment of the present invention;
FIG. 6 is another flow chart of a thin film deposition method according to an embodiment of the present invention;
Reference numerals illustrate:
1-cooling a component; 11-cooling the body; 111-annular cooling plates; 112-annular protrusions; 12-a liquid inlet pipe; 13-a liquid outlet pipe; 14-an air inlet pipe; 15-a support; 16-an air outlet hole; 171-fourth annular channel; 172-a fifth annular channel; 1721-a first channel segment; 1722-a second channel segment; 173-a third connecting channel; 174-fourth connecting channel; 181-a first annular channel; 182-a second annular channel; 183-third annular channel; 184-first connection channel; 185-a second connection channel; 2-a process chamber; 3-a carrier; 4-driving shaft; 5-target material; 6-rotating magnetic control means; 7-lining; 8-cover ring; 9-wafer.
Detailed Description
In order to enable those skilled in the art to better understand the technical scheme of the present invention, the following describes the semiconductor process equipment and the thin film deposition method provided by the present invention in detail with reference to the accompanying drawings.
As shown in fig. 1 and 2, the present embodiment provides a semiconductor process apparatus including a process chamber 2, a carrier member 3, and a cooling member 1, wherein the carrier member 3 is movably disposed in the process chamber 2 for carrying a wafer 9; the cooling member 1 is disposed in the process chamber 2 below the carrier member 3 for cooling the carrier member 3 when the carrier member 3 is moved close to the cooling member 1.
According to the semiconductor process equipment provided by the embodiment of the invention, the cooling component 1 is arranged below the bearing component 3 in the process chamber 2, so that when the bearing component 3 needs to be cooled, the bearing component 3 is moved to be close to the cooling component 1 to cool the bearing component 3 by means of the cooling component 1, and compared with the mode that the bearing component 3 is cooled by standing in the prior art or the bearing component 3 is cooled by introducing the process gas with the room temperature into the process chamber 2, the time required for cooling the bearing component 3 to meet the process requirement can be reduced, so that the cooling efficiency is improved, and the productivity is improved.
As shown in fig. 1, the carrier member 3 is movably arranged in the process chamber 2, and the cooling member 1 is arranged in the process chamber 2 below the carrier member 3. In the semiconductor process, the carrier 3 carries the wafer 9 to perform the semiconductor process, and when the temperature of the wafer 9 or the temperature of the carrier 3 rises to be higher than the temperature required by the semiconductor process, the carrier 3 needs to be cooled to reduce the temperature of the carrier 3, so that the temperature of the carrier 3 is reduced to a temperature meeting the requirement of the semiconductor process, at this time, the semiconductor process can be stopped, and the cooling process can be performed. When the cooling process is performed, the carrier 3 may be moved close to the cooling component 1 by lowering the carrier 3, so that the carrier 3 is cooled by the cooling component 1, and when the temperature of the carrier 3 meets the temperature required by the semiconductor process, the cooling process may be stopped, and the semiconductor process may be performed again, at this time, by raising the carrier 3, the carrier 3 may be moved away from the cooling component 1, or the cooling of the carrier 3 by the cooling component 1 may be stopped, so that the cooling component 1 continuously cools the carrier 3 in the semiconductor process, resulting in that the temperature of the carrier 3 or the wafer 9 is less than the temperature required by the semiconductor process. The semiconductor process equipment provided by the embodiment of the invention can reduce the time required for cooling the bearing part 3 to meet the process requirement when carrying out the cooling process each time, thereby improving the cooling efficiency and the productivity of the whole semiconductor process equipment.
As shown in fig. 1, a target 5 and a rotating magnetic control device 6 may be further disposed on the top of the process chamber 2, where the rotating magnetic control device 6 is rotatably disposed above the target 5, and is used to generate a magnetic field in a physical vapor deposition process, attract plasma in the process chamber 2 to bombard the target 5, so that target atoms are generated by the target 5, and since the rotating magnetic control device 6 is rotatable, the position of the magnetic field may be changed, so that the plasma may bombard the target 5 uniformly.
As shown in fig. 1, a liner 7 and a Cover ring 8 may be further disposed in the process chamber 2, where the liner 7 is used for shielding an inner wall of the process chamber 2, avoiding the plasma from bombarding the inner wall of the process chamber 2, causing damage to the inner wall of the process chamber 2, and the Cover ring 8 is overlapped on the liner 7 and used for shielding an edge of the carrier 3 in a semiconductor process, avoiding the plasma from bombarding the edge of the carrier 3, and causing damage to the edge of the carrier 3.
Alternatively, the carrier 3 may comprise an electrostatic chuck.
As shown in fig. 1 and 2, in a preferred embodiment of the present invention, the cooling unit 1 may include a cooling body 11, a support 15, a liquid inlet pipe 12, a liquid outlet pipe 13, and an air inlet pipe 14, wherein the cooling body 11 is disposed in the process chamber 2 and below the carrier unit 3, and a liquid cooling channel and a gas cooling channel are formed in the cooling body 11; the support 15 is connected to the process chamber 2 and the cooling body 11, respectively, for supporting the cooling body 11; the liquid inlet pipe 12 is used for introducing cooling liquid into the liquid cooling channel; the liquid outlet pipe 13 is used for leading out cooling liquid from the liquid cooling channel; the intake pipe 14 is used for introducing cooling gas into the gas cooling passage; a plurality of air outlet holes 16 are formed in the side wall of the air cooling channel, and air outlets of the air outlet holes 16 are formed in the top surface of the cooling main body 11.
The cooling body 11 is arranged in the process chamber 2 and below the bearing part 3, a liquid cooling channel and a gas cooling channel are arranged in the cooling body 11, and the supporting piece 15 is respectively connected with the process chamber 2 and the cooling body 11 and is used for supporting the cooling body 11. The liquid inlet pipe 12 is communicated with the liquid cooling channel for introducing cooling liquid into the liquid cooling channel, the liquid outlet pipe 13 is communicated with the liquid cooling channel for guiding out cooling liquid from the liquid cooling channel, namely, the cooling liquid is led into the liquid cooling channel through the liquid inlet pipe 12 and is guided out from the liquid cooling channel through the liquid outlet pipe 13 after flowing through the liquid cooling channel, so that new cooling liquid can continuously enter the liquid cooling channel to continuously cool the bearing part 3 and maintain a stable cooling effect. The air inlet pipe 14 is communicated with the air cooling channel and is used for introducing cooling air into the air cooling channel, the side wall of the air cooling channel is provided with a plurality of air outlet holes 16, the air outlet of the air outlet holes 16 is arranged on the top surface of the cooling main body 11, and the cooling air introduced into the air cooling channel through the air inlet pipe 14 flows into the plurality of air outlet holes 16 arranged on the side wall of the air cooling channel in the process of flowing through the air cooling channel and flows out of the air outlet holes 16 through the air outlet of the air outlet holes 16 arranged on the top surface of the cooling main body 11 so as to flow to the bearing part 3 above the cooling main body 11.
When it is desired to cool the carrier 3, a cooling liquid can be introduced into the liquid cooling channel via the liquid inlet pipe 12 and a cooling gas can be introduced into the gas cooling channel via the gas inlet pipe 14, and the carrier 3 is moved close to the cooling body 11, so that the carrier 3 is cooled by means of both the cooling liquid and the cooling gas. The cooling body 11 can be cooled by the cooling liquid flowing through the liquid cooling channel, so that heat radiation can be generated between the cooling body 11 and the bearing part 3 in the vacuum environment of the semiconductor process to cool the bearing part 3, the bearing part 3 can be cooled by the heat convection between the cooling gas flowing through the gas cooling channel and the plurality of air outlet holes 16 and the bearing part 3, and the cooling body 11 and the bearing part 3 can be not in the vacuum environment any more by the cooling gas, so that heat conduction can be generated between the cooling body 11 and the bearing part 3 to cool the bearing part 3. And the specific heat capacity of the cooling liquid is larger than that of the cooling gas, so that the bearing part 3 is cooled by the cooling liquid and the cooling gas together, the time required for cooling the bearing part 3 to meet the process requirement can be further reduced, the cooling efficiency is further improved, and the productivity is improved.
Alternatively, the diameter of the air outlet hole 16 may be 2mm.
Alternatively, the type of cooling gas may be the same as the type of process gas. This prevents the cooling gas from contaminating the environment within the process chamber 2 and the wafer 9, thereby improving the semiconductor process.
Alternatively, the cooling gas may include argon (Ar).
As shown in fig. 1-3, the cooling body 11 may include an annular cooling plate 111 and an annular protrusion 112 disposed at the edge of the cooling plate, where the annular cooling plate 111 is sleeved on the driving shaft 4 of the bearing member 3, the annular cooling plate 111 and the annular protrusion 112 cooperate to form a receiving groove for receiving at least part of the bearing member 3, and air outlets of the air outlet holes 16 are disposed on top surfaces of the annular cooling plate 111 and the annular protrusion 112; the support 15 includes a plurality of support columns uniformly distributed along the circumference of the annular cooling plate 111, one end of which is connected to the bottom wall of the annular cooling plate 111, and the other end of which is connected to the bottom wall of the process chamber 2.
The driving shaft 4 is used to drive the carrier 3 to move close to the cooling part 1 or to move away from the cooling part 1 or to move to the semiconductor process position, alternatively, the driving shaft 4 may drive the carrier 3 to move up and down to move the carrier 3 to close to the cooling part 1 by driving the carrier 3 to descend or to move the carrier 3 to move away from the cooling part 1 by driving the carrier 3 to ascend or to move the carrier 3 to the semiconductor process position by driving the carrier 3 to ascend. The annular cooling plate 111 is annular and surrounds the drive shaft 4. The plurality of support columns are uniformly distributed along the circumferential direction of the annular cooling plate 111, and one end of each support column is connected with the bottom wall of the annular cooling plate 111 and the other end is connected with the bottom wall of the process chamber 2 to support the annular cooling plate 111 and the annular protrusions 112 provided at the edges of the cooling plate, that is, the cooling body 11, by supporting the annular cooling plate 111. The annular cooling plate 111 and the annular protrusion 112 cooperate to form a receiving groove for receiving at least part of the carrier 3, e.g. the depth of the receiving groove may be smaller than the thickness of the carrier 3 to receive at least a certain thickness of the carrier 3 therein, but the depth of the receiving groove may also be greater than or equal to the thickness of the carrier 3 to receive the carrier 3 entirely therein.
Through the gas outlets of the gas outlet holes 16 arranged on the top surfaces of the annular cooling plate 111 and the annular protrusion 112, the cooling gas flowing through the gas cooling channel can flow to the bottom surface of the bearing part 3 after flowing out through the gas outlet holes of the gas outlet holes 16 arranged on the top surface of the annular cooling plate 111, so that the bottom of the bearing part 3 is cooled by means of heat convection between the cooling gas and the bottom surface of the bearing part 3, and the cooling gas flowing through the gas cooling channel can flow to the top surface of the bearing part 3 after flowing out through the gas outlet holes of the gas outlet holes 16 arranged on the top surface of the annular protrusion 112, so that the top of the bearing part 3 is cooled by means of heat convection between the cooling gas and the top surface of the bearing part 3, so that the cooling gas flowing through the gas cooling channel can flow to the top surface of the bottom surface of the bearing part 3 at the same time, and then the bottom and top of the bearing part 3 can be cooled at the same time, so that the time required by the process requirements can be further reduced, the cooling efficiency can be further improved, and the cooling efficiency can be further improved.
Alternatively, the annular protrusion 112 may be 25mm in height and 5mm in width.
As shown in fig. 1, in a preferred embodiment of the present invention, the radial dimension of the annular protrusion 112 may be larger than the radial dimension of the carrier 3, and when the carrier 3 is accommodated in the accommodation groove, there is a gap between the inner side wall of the annular protrusion 112 and the outer side wall of the carrier 3. In this way, friction between the bearing component 3 and the annular bulge 112 caused by the driving shaft 4 in the process of driving the bearing component 3 to lift can be avoided, so that particle pollutants generated by friction between the annular bulge 112 and the bearing component 3 are avoided, and pollutants are caused on the wafer 9 in the process chamber 2, thereby improving the semiconductor process effect.
As shown in fig. 2 and 4, the liquid cooling passage and the gas cooling passage may each be provided in the annular cooling plate 111, and may each include a plurality of concentric annular passages, and the annular passages of the liquid cooling passage and the annular passages of the gas cooling passage may be alternately arranged.
The design can improve the area of the liquid cooling channel and the gas cooling channel in the annular cooling plate 111 on one hand, and can improve the uniformity of the distribution of the liquid cooling channel and the gas cooling channel in the annular cooling plate 111, so as to improve the area of cooling liquid and cooling gas flowing through the annular cooling plate 111, and improve the uniformity of cooling liquid and cooling gas flowing through the annular cooling plate 111, thereby improving the effect and uniformity of heat radiation and heat conduction between the annular cooling plate 111 and the bearing part 3, improving the effect and uniformity of heat convection between the cooling gas and the bearing part 3, further reducing the time required by cooling the bearing part 3 to meet the process requirement, improving the cooling effect, further improving the cooling efficiency, and improving the productivity.
On the other hand, the annular cooling plate 111 can be cooled by the cooling liquid, and heat radiation and heat conduction between the annular cooling plate 111 and the bearing member 3, and heat convection between the cooling gas and the bearing member 3 can be achieved, so that the bearing member 3 can be cooled alternately from the center to the edge of the bearing member 3, and the situation that the temperature of the part of the bearing member 3 corresponding to the cooling liquid is lower than the temperature of the part of the bearing member 3 corresponding to the cooling gas due to the fact that the specific heat capacity of the cooling liquid is larger than the specific heat capacity of the cooling gas can be avoided, and then the cooling uniformity of the bearing member 3 is improved, and further the cooling effect is improved.
As shown in fig. 4, in a preferred embodiment of the present invention, the gas cooling channel may include a first annular channel 181, a second annular channel 182, a third annular channel 183, a first connection channel 184 and a second connection channel 185 on the same plane, the first annular channel 181, the second annular channel 182 and the third annular channel 183 are sequentially arranged along a direction from the center to the edge of the annular cooling plate 111, the second annular channel 182 has a notch, the first connection channel 184 communicates with the first annular channel 181 and the third annular channel 183 through the notch, the second connection channel 185 communicates with the second annular channel 182 and the third annular channel 183, the gas inlet of the gas cooling channel is opened on the second connection channel 185, the gas outlet of the gas outlet hole 16 opened on the side walls of the first annular channel 181 and the second annular channel 182 is positioned on the top surface of the annular cooling plate 111, and the gas outlet of the gas outlet hole 16 opened on the side walls of the third annular channel 183 is positioned on the top surface of the annular protrusion 112.
In the process that the cooling gas is introduced into the gas cooling channel from the gas inlet pipe 14 and flows through the gas cooling channel, and flows out from the gas outlet holes 16, the cooling gas enters the second connecting channel 185 through the gas inlet opening formed in the second connecting channel 185, and because the second connecting channel 185 is communicated with the second annular channel 182 and the third annular channel 183, the cooling gas entering the second connecting channel 185 is diffused into the second annular channel 182 and the third annular channel 183 through the second connecting channel 185, and because the first connecting channel 184 is communicated with the first annular channel 181 and the third annular channel 183 through the notch, the cooling gas entering the third annular channel 183 is diffused into the first annular channel 181 through the first connecting channel 184, and flows into the plurality of gas outlet holes 16 formed on the side walls of the first annular channel 181, the second annular channel 182 and the third annular channel 183 respectively in the process that the cooling gas flows out from the top surface of the annular cooling plate 111, the gas outlet holes formed on the top surface of the first annular channel 181 and the second annular channel 182 and the side wall of the third annular channel 183 on the top surface of the annular channel 16, and the top surface of the gas outlet hole 16 formed on the top surface of the annular channel member 3 can bear the top surface of the annular member 112 and the third annular channel 183 respectively.
In a preferred embodiment of the present invention, as shown in fig. 4, the side wall of the first connecting channel 184 may also be provided with an air outlet 16, and the air outlet of the air outlet 16 may be located on the top surface of the annular cooling plate 111. This allows the cooling liquid to flow into the plurality of air outlet holes 16 formed in the side wall of the first connecting passage 184 and to flow out from the air outlets of the air outlet holes 16 formed in the side wall of the first connecting passage 184 on the top surface of the annular cooling plate 111 so as to flow toward the bottom surface of the carrier member 3 during the flow through the first connecting passage 184. By also providing the air outlet holes 16 on the side walls of the first connecting passage 184 with the air outlet of the air outlet holes 16 on the top surface of the annular cooling plate 111, the amount of cooling gas flowing to the bottom surface of the carrier 3 can be increased, thereby improving the cooling effect on the carrier 3.
As shown in fig. 4, the liquid cooling channel may be located on the same plane as the gas cooling channel, and may include a fourth annular channel 171, a fifth annular channel 172, a third connecting channel 173 and a fourth connecting channel 174, where the fourth annular channel 171 is located between the first annular channel 181 and the second annular channel 182, the fifth annular channel 172 is located between the second annular channel 182 and the third annular channel 183, the fourth annular channel 171 has a notch for the first connecting channel 184 to pass through, the fifth annular channel 172 includes a first channel section 1721 and a second channel section 1722, one end of the first channel section 1721 is provided with a liquid inlet of the liquid cooling channel, the other end is communicated with a liquid inlet of the fourth annular channel 171 through the third connecting channel 173, one end of the second channel section 1722 is provided with a liquid outlet of the liquid cooling channel, and the other end is communicated with a liquid outlet of the fourth annular channel 171 through the fourth connecting channel 174.
In the process that the cooling liquid is introduced into the liquid cooling channel from the liquid inlet pipe 12 and flows through the liquid cooling channel and is led out from the liquid outlet pipe 13, the cooling liquid enters the first channel section 1721 through the liquid inlet opening formed at one end of the first channel section 1721, the other end of the first channel section 1721 is communicated with the liquid inlet end of the fourth channel section 171 through the third connecting channel 173, the cooling liquid enters the fourth channel 171 from the liquid inlet end of the fourth channel section 171 through the third connecting channel 173 after flowing through the first channel section 1721, and the liquid outlet end of the fourth channel section 171 is communicated with the other end of the second channel section 1722 through the fourth connecting channel 174, so that the cooling liquid enters the second channel section 1722 from the liquid outlet end of the fourth channel section 171 after flowing through the fourth channel section 1722 and enters the liquid outlet pipe 13 from the liquid outlet opening formed at one end of the second channel section 1722 after flowing through the second channel section 1722, and is led out from the liquid outlet pipe 13.
As shown in fig. 4, in a preferred embodiment of the present invention, the first annular channel 181, the second annular channel 182, the third annular channel 183, the fourth annular channel 171 and the fifth annular channel 172 may each have a circular shape, and the first channel section 1721 and the second channel section 1722 may have circular shapes.
As shown in fig. 5, as another technical solution, an embodiment of the present invention further provides a thin film deposition method, which is applied to the semiconductor process apparatus provided by the embodiment of the present invention, including:
S1, after a thin film deposition process is performed on a preset number of wafers 9, moving a bearing part 3 for bearing the wafers 9 to be close to a cooling part 1 positioned below the bearing part 3;
s2, the cooling member 1 cools the carrier member 3.
According to the thin film deposition method provided by the embodiment of the invention, by means of the semiconductor process equipment provided by the embodiment of the invention, after the thin film deposition process is carried out on the wafers 9 with the preset number, the carrying part 3 for carrying the wafers 9 is moved to be close to the cooling part 1 below the carrying part 3, so that the cooling part 1 cools the carrying part 3, and compared with the mode that the carrying part 3 is kept stand for cooling in the prior art or the carrying part 3 is cooled by introducing the process gas with the room temperature into the process chamber 2, the time required for cooling the carrying part 3 to meet the process requirement can be reduced, thereby improving the cooling efficiency and the productivity.
The predetermined number of wafers 9 may be one or a plurality.
As shown in fig. 6, in a preferred embodiment of the present invention, S1, after performing a thin film deposition process on a predetermined number of wafers 9, moving a carrier 3 for carrying the wafers 9 to be close to a cooling part 1 located under the carrier 3, may include:
S11, moving the bearing part 3 into a containing groove on the cooling part 1;
s2, cooling the carrier member 3 by the cooling member 1 may include:
s21, introducing cooling liquid into the liquid cooling channel in the cooling part 1;
S22, cooling gas is introduced into the gas cooling channel in the cooling member 1, and is led to the bottom surface, the side surface, and/or the top surface of the carrier member 3 through the plurality of gas outlet holes 16 formed in the side wall of the gas cooling channel.
Cooling liquid is introduced into the liquid cooling channel in the cooling part 1, and cooling gas is introduced into the gas cooling channel in the cooling part 1, and the cooling gas is led to the bottom surface, the side surface and/or the top surface of the bearing part 3 through a plurality of gas outlet holes 16 formed on the side wall of the gas cooling channel, so that the bearing part 3 is cooled by the cooling liquid and the cooling gas together. The cooling body 11 can be cooled by the cooling liquid flowing through the liquid cooling channel, so that heat radiation can be generated between the cooling body 11 and the bearing part 3 in the vacuum environment of the semiconductor process to cool the bearing part 3, the bearing part 3 can be cooled by the heat convection between the cooling gas flowing out through the gas cooling channel through the plurality of air outlet holes 16 and the bearing part 3, the cooling body 11 and the bearing part 3 can not be in the vacuum environment any more by the cooling gas, the cooling body 11 can be cooled by the cooling liquid, heat conduction can be generated between the cooling body 11 and the bearing part 3 to cool the bearing part 3, and the specific heat capacity of the cooling liquid is larger than the specific heat capacity of the cooling gas, so that the bearing part 3 can be cooled by the cooling liquid and the cooling gas together, the time required by the process requirement can be further reduced, the cooling efficiency can be further improved, and the productivity can be improved.
In addition, the plurality of air outlet holes 16 formed on the side wall of the air cooling channel lead cooling air to the bottom surface, the side surface and/or the top surface of the bearing part 3, so that the bearing part 3 can be cooled from the bottom, the side part and/or the top of the bearing part 3 at the same time, the time required for cooling the bearing part 3 to meet the process requirement can be further reduced, the cooling efficiency is further improved, and the productivity is improved.
In summary, the semiconductor process equipment and the thin film deposition method provided by the embodiments of the present invention can reduce the time required for cooling the carrier 3 to meet the process requirements, thereby improving the cooling efficiency and the productivity.
It is to be understood that the above embodiments are merely illustrative of the application of the principles of the present invention, but the invention is not limited thereto. Various modifications and improvements may be made by those skilled in the art without departing from the spirit and substance of the invention, and are also considered to be within the scope of the invention.
Claims (9)
1. A semiconductor processing apparatus comprising a process chamber, a carrier member, and a cooling member, wherein,
The bearing component is movably arranged in the process chamber and is used for bearing a wafer;
The cooling component is arranged in the process chamber and positioned below the bearing component and is used for cooling the bearing component when the bearing component moves to be close to the cooling component;
The cooling member includes:
the cooling main body is arranged in the process chamber and positioned below the bearing component, and a liquid cooling channel and a gas cooling channel are formed in the cooling main body;
the cooling body includes an annular cooling plate;
The liquid cooling channels and the gas cooling channels are arranged in the annular cooling plate and comprise a plurality of concentric annular channels, and the annular channels of the liquid cooling channels and the annular channels of the gas cooling channels are alternately arranged.
2. The semiconductor processing apparatus of claim 1, wherein the cooling component further comprises:
a support connected to the process chamber and the cooling body, respectively, for supporting the cooling body;
a liquid inlet pipe for introducing cooling liquid into the liquid cooling channel;
a liquid outlet pipe for leading out the cooling liquid from the liquid cooling channel;
an intake pipe for introducing cooling gas into the gas cooling passage;
a plurality of air outlet holes are formed in the side wall of the air cooling channel, and air outlets of the air outlet holes are formed in the top surface of the cooling main body.
3. The semiconductor processing apparatus of claim 2, wherein the cooling body further comprises an annular protrusion disposed at an edge of the cooling plate, the annular cooling plate being sleeved on the driving shaft of the carrier, the annular cooling plate and the annular protrusion cooperating to form a receiving slot for receiving at least a portion of the carrier, the annular cooling plate and a top surface of the annular protrusion each being provided with an air outlet of the air outlet hole;
The support piece comprises a plurality of support columns, the support columns are uniformly distributed along the circumference of the annular cooling plate, one end of each support column is connected with the bottom wall of the annular cooling plate, and the other end of each support column is connected with the bottom wall of the process chamber.
4. A semiconductor processing apparatus according to claim 3, wherein the radial dimension of the annular projection is greater than the radial dimension of the carrier, and wherein a gap is provided between an inner sidewall of the annular projection and an outer sidewall of the carrier when the carrier is received in the receiving groove.
5. The semiconductor processing apparatus of claim 4, wherein the gas cooling channel comprises a first annular channel, a second annular channel, a third annular channel, a first connection channel and a second connection channel on the same plane, the first annular channel, the second annular channel and the third annular channel are sequentially arranged along a direction from a center of the annular cooling plate to an edge, the second annular channel is provided with a notch, the first connection channel is communicated with the first annular channel and the third annular channel through the notch, the second connection channel is communicated with the second annular channel and the third annular channel, a gas inlet of the gas cooling channel is formed in the second connection channel, a gas outlet of the gas outlet formed in the side walls of the first annular channel and the second annular channel is formed in the top surface of the annular cooling plate, and a gas outlet of the gas outlet formed in the side walls of the third annular channel is formed in the top surface of the annular protrusion.
6. The semiconductor processing apparatus of claim 5, wherein the liquid cooling channel and the gas cooling channel are on a same plane, and include a fourth annular channel, a fifth annular channel, a third connecting channel and a fourth connecting channel, the fourth annular channel is located between the first annular channel and the second annular channel, the fifth annular channel is located between the second annular channel and the third annular channel, the fourth annular channel has a notch for the first connecting channel to pass through, the fifth annular channel includes a first channel section and a second channel section, one end of the first channel section is provided with a liquid inlet of the liquid cooling channel, the other end of the first channel section is communicated with a liquid inlet of the fourth annular channel through the third connecting channel, one end of the second channel section is provided with a liquid outlet of the liquid cooling channel, and the other end of the second channel section is communicated with a liquid outlet of the fourth annular channel through the fourth connecting channel.
7. The semiconductor processing apparatus of claim 6, wherein the first annular channel, the second annular channel, the third annular channel, the fourth annular channel, and the fifth annular channel are each circular-ring-shaped, and the first channel segment and the second channel segment are each circular-arc-shaped.
8. A thin film deposition method applied to the semiconductor process apparatus according to any one of claims 1 to 7, comprising:
After performing a thin film deposition process on a predetermined number of wafers, moving a carrier for carrying the wafers to be close to a cooling part located below the carrier;
The cooling member cools the carrier member.
9. The method for depositing a thin film according to claim 8, wherein,
The moving a carrier for carrying a wafer to a position close to a cooling member located below the carrier includes:
moving the carrier member into a receiving slot on the cooling member;
the cooling of the carrier member by the cooling member includes:
introducing a cooling liquid into a liquid cooling channel in the cooling component;
And cooling gas is introduced into the gas cooling channel in the cooling component, and is introduced to the bottom surface, the side surface and/or the top surface of the bearing component through a plurality of air outlet holes formed in the side wall of the gas cooling channel.
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| CN115132624A (en) * | 2022-07-13 | 2022-09-30 | 北京北方华创微电子装备有限公司 | Semiconductor processing equipment |
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