CN113512702B - Single-phase beta-NiAl bonding layer and preparation method thereof - Google Patents
Single-phase beta-NiAl bonding layer and preparation method thereof Download PDFInfo
- Publication number
- CN113512702B CN113512702B CN202110794155.7A CN202110794155A CN113512702B CN 113512702 B CN113512702 B CN 113512702B CN 202110794155 A CN202110794155 A CN 202110794155A CN 113512702 B CN113512702 B CN 113512702B
- Authority
- CN
- China
- Prior art keywords
- beta
- phase
- bonding layer
- nickel
- gamma
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C1/00—Making non-ferrous alloys
- C22C1/02—Making non-ferrous alloys by melting
- C22C1/023—Alloys based on nickel
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/007—Alloys based on nickel or cobalt with a light metal (alkali metal Li, Na, K, Rb, Cs; earth alkali metal Be, Mg, Ca, Sr, Ba, Al Ga, Ge, Ti) or B, Si, Zr, Hf, Sc, Y, lanthanides, actinides, as the next major constituent
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/03—Alloys based on nickel or cobalt based on nickel
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/10—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of nickel or cobalt or alloys based thereon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C10/00—Solid state diffusion of only metal elements or silicon into metallic material surfaces
- C23C10/06—Solid state diffusion of only metal elements or silicon into metallic material surfaces using gases
- C23C10/08—Solid state diffusion of only metal elements or silicon into metallic material surfaces using gases only one element being diffused
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
Landscapes
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Metallurgy (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- General Chemical & Material Sciences (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The invention belongs to the technical field of thermal barrier coatings, and particularly relates to a single-phase beta-NiAl bonding layer and a preparation method thereof. The preparation method of the single-phase beta-NiAl bonding layer provided by the invention comprises the following steps: providing a beta-gamma' -biphase nickel-aluminum alloy containing active elements; preparing a two-phase gamma '-beta bonding layer on the surface of a substrate by the beta-gamma' -two-phase nickel-aluminum alloy containing the active elements; and carrying out aluminizing treatment on the two-phase gamma' -beta bonding layer to obtain the single-phase beta-NiAl bonding layer. The preparation method provided by the invention does not need to prepare the single-phase beta-NiAl alloy by smelting, and the single-phase beta-NiAl bonding layer is obtained by an aluminizing treatment mode after the double-phase gamma' -beta bonding layer is prepared on the surface of the matrix.
Description
Technical Field
The invention belongs to the technical field of thermal barrier coatings, and particularly relates to a single-phase beta-NiAl bonding layer and a preparation method thereof.
Background
Thermal barrier coatings are mainly used for hot end components of aircraft engines and generally consist of two parts: a ceramic layer for insulating the alloy component and a bonding layer for resisting high-temperature oxidation corrosion. The bonding layer is positioned between the metal substrate and the ceramic layer, so that the thermal expansion difference between the coating and the substrate is improved, the thermal stress of a system is relieved, and the oxidation of oxygen to the substrate is hindered.
The beta-NiAl is a long-range ordered intermetallic compound, and due to the characteristic of coexistence of metal bonds and covalent bonds, the melting point Tm of Ni50Al50 is 1638 ℃, so that the preparation method has the prerequisite for preparing the ultrahigh-temperature thermal barrier coating bonding layer. In addition, ni50Al50 has a lower density (5.9 g/cm) 3 ) And a high young's modulus (240 GPa) and has been attracting attention as a candidate material for a high-temperature structural device for a long time. beta-NiAl has excellent high temperature oxidation resistance, which is mainly based on the ability to form a single intact alpha-Al with low growth rate 2 O 3 And (5) oxidizing the film. The bonding layer of the beta-NiAl system is expected to be in a higher temperature environment (>1150 deg.C) was used. However, the beta-NiAl directly used as the bonding layer has some defects, a large number of cavities are formed in the beta-NiAl coating during high-temperature oxidation, the cavities limit the contact between metal and the film at the interface of the metal and the oxide film, and the interface cavities are important factors influencing the adhesion. Therefore, the NiAl coating needs to be modified to prepare a novel thermal barrier coating bonding layer material.
The addition of a proper amount of active elements (20 elements in total, including all rare earth elements, hf, zr, and Ti) to β -NiAl can improve the adhesion of the oxide film and reduce the growth rate of the oxide film by preventing the internal diffusion of O element and the external diffusion of Al element during the high-temperature oxidation process, reducing interfacial voids, and the like, which is called the active element effect (REE).
At present, the preparation of the NiAl bonding layer doped with the active element usually adopts the method of directly depositing the single-phase beta-NiAl bonding layer containing the active element on an alloy substrate, but because the method needs to use the single-phase beta-NiAl alloy containing the active element as a target material for physical vapor deposition or multi-arc ion plating, the single-phase beta-NiAl alloy containing the active element is very brittle and difficult to melt, and is easy to break off in the machining process, and the preparation success rate is low.
Disclosure of Invention
In view of this, the invention provides a preparation method of a single-phase beta-NiAl bonding layer, the preparation method provided by the invention does not need to prepare a single-phase beta-NiAl alloy in advance, and the success rate of preparing the single-phase beta-NiAl bonding layer is greatly improved.
In order to solve the technical problem, the invention provides a preparation method of a single-phase beta-NiAl bonding layer, which comprises the following steps:
providing a beta-gamma' -biphase nickel-aluminum alloy containing active elements;
preparing a two-phase gamma '-beta bonding layer on the surface of a substrate by using the beta-gamma' -two-phase nickel-aluminum alloy containing the active elements;
and carrying out aluminizing treatment on the two-phase gamma' -beta bonding layer to obtain the single-phase beta-NiAl bonding layer.
Preferably, the aluminizing treatment mode is chemical vapor deposition, and the aluminizing treatment temperature is 950-1050 ℃; the time is 3-10 h.
Preferably, the preparation method of the beta-gamma' -dual-phase nickel-aluminum alloy containing the active elements comprises the following steps:
smelting an active element, a nickel source and an aluminum source, and then casting to obtain an ingot;
and annealing the cast ingot to obtain the beta-gamma' -biphase nickel-aluminum alloy containing the active elements.
Preferably, the temperature of the annealing treatment is 1200-1400 ℃, and the time is 22-26 h.
Preferably, the manner of preparing the biphasic gamma' -beta bonding layer comprises multi-arc ion plating or physical vapor deposition.
Preferably, the arc current of the multi-arc ion plating is 160-200A, the bias voltage is 10-30V, and the vacuum degree is 1 x 10 -3 ～9×10 -3 Pa, the temperature of the matrix in the multi-arc ion plating process is 300-500 ℃;
preferably, the physical vapor deposition conditions are as follows: the vacuum degree of the deposition chamber is1×10 -5 ～1×10 -3 Pa; the rotation rate of the substrate is 8-10 r/min, and the temperature of the substrate is 700-800 ℃; the current of the electron beam is 1.2-1.5A, and the voltage of the electron beam is 17-19 kV.
Preferably, the substrate comprises N5 nickel-based single crystal superalloy, IC21 nickel-based single crystal superalloy, DD6 nickel-based single crystal superalloy, or IC31 nickel-based single crystal superalloy.
The invention also provides a single-phase beta-NiAl bonding layer prepared by the preparation method in the technical scheme, and the single-phase beta-NiA bonding layer comprises the following components in atomic percentage:
Al 30～60at.％；
0.02-0.26 at.% of active elements;
the balance of Ni.
Preferably, the active element comprises one or more of rare earth elements, hf, zr, and Ti.
The invention provides a preparation method of a single-phase beta-NiAl bonding layer, which comprises the following steps: providing a beta-gamma' -biphase nickel-aluminum alloy containing active elements; preparing a two-phase gamma '-beta bonding layer on the surface of a substrate by the beta-gamma' -two-phase nickel-aluminum alloy containing the active elements; and carrying out aluminizing treatment on the two-phase gamma' -beta bonding layer to obtain the single-phase beta-NiAl bonding layer. The preparation method provided by the invention does not need to prepare the single-phase beta-NiAl alloy by smelting, and the single-phase beta-NiAl bonding layer is obtained by aluminizing after the double-phase gamma' -beta bonding layer is prepared on the surface of the substrate.
Drawings
FIG. 1 is a diagram of a sample object containing a single phase β -NiAl bonding layer;
FIG. 2 is a SEM image of a biphasic gamma' -beta bonding layer as prepared in example 1;
FIG. 3 is an SEM image of a single phase beta-NiAl bond layer prepared in example 1;
FIG. 4 is a plot of the mass change points for different oxidation treatment times for samples containing single phase β -NiAl bond layers prepared in example 1.
Detailed Description
The invention provides a preparation method of a single-phase beta-NiAl bonding layer, which comprises the following steps:
providing a beta-gamma' -biphase nickel-aluminum alloy containing active elements;
preparing a two-phase gamma '-beta bonding layer on the surface of a substrate by the beta-gamma' -two-phase nickel-aluminum alloy containing the active elements;
and aluminizing the two-phase gamma' -beta bonding layer to obtain the single-phase beta-NiAl bonding layer.
The invention provides a beta-gamma' -biphase nickel-aluminum alloy containing active elements. In the present invention, the active element preferably includes one or more of rare earth elements, hf, zr, and Ti, more preferably Hf and Zr. When the active elements comprise more than two specific substances, the atomic ratio of the specific substances is not particularly limited, and any ratio can be adopted; in the embodiment of the invention, the active elements are Hf and Zr, and the atomic ratio of the Hf to the Zr is 1. In the present invention, the active element is preferably provided in the form of a simple metal.
In the present invention, the method for preparing the beta-gamma' -dual-phase nickel aluminum alloy containing the active element preferably comprises the following steps:
smelting the active elements, a nickel source and an aluminum source, and then casting to obtain a cast ingot;
and annealing the cast ingot to obtain the beta-gamma' -biphase nickel-aluminum alloy containing the active elements.
According to the invention, the active elements, the nickel source and the aluminum source are smelted and cast to obtain the ingot.
In the present invention, the nickel source is preferably a nickel block, and the aluminum source is preferably an aluminum block. In the present invention, the atomic percentage of the active element in the ingot is preferably 0.04 to 0.24at.%, and more preferably 0.05 to 0.15at.%. In the present invention, the aluminum source preferably accounts for 25 to 45at.%, more preferably 30 to 40at.% of the ingot.
In the present invention, the method further preferably comprises, before the melting: and sequentially cleaning and drying the active elements, the nickel source and the aluminum source. In the present invention, the cleaning is preferably ultrasonic cleaning, and the solvent for ultrasonic cleaning is preferably acetone; the ultrasonic cleaning time is preferably 25-35 min, and more preferably 30min; the power of the ultrasound is not specially limited, and the ultrasound can be cleaned. In the present invention, the drying temperature and time are not particularly limited as long as the solvent capable of removing the surfaces of the active element, the nickel source and the aluminum source is used.
In the present invention, the melting is preferably vacuum melting, and the degree of vacuum of the vacuum melting is preferably 1 × 10 -5 ～1×10 -4 Pa, more preferably 0.51X 10 -4 ～0.81×10 -4 Pa. The temperature and time of the vacuum melting are not particularly limited, as long as the melting can be achieved. In the smelting process, the invention preferably carries out turnover, and the turnover number is preferably 4 to 8 times, and more preferably 5 to 6 times. The invention can ensure that the components in the ingot are uniformly distributed through the turning. The vacuum melting device is not particularly limited, and the vacuum melting device can be a conventional device in the field, and an arc melting furnace is adopted for vacuum melting in the embodiment of the invention.
In the invention, the temperature of the annealing treatment is preferably 1200-1400 ℃, and more preferably 1250-1300 ℃; the time is preferably 22 to 26 hours, more preferably 24 to 25 hours. In the present invention, the annealing treatment preferably further includes: and cooling the annealed product to room temperature, wherein the room temperature is preferably 20-35 ℃, and more preferably 25-30 ℃.
The invention prepares the biphase gamma '-beta bonding layer on the surface of the matrix by the beta-gamma' -biphase nickel-aluminum l alloy containing the active elements. In the present invention, the substrate preferably comprises N5 nickel-based single crystal superalloy, IC21 nickel-based single crystal superalloy, DD6 nickel-based single crystal superalloy, or IC31 nickel-based single crystal superalloy, and more preferably, IC21 nickel-based single crystal superalloy. The shape and size of the substrate are not particularly limited, and can be set as required.
In the present invention, the manner of preparing the bi-phase γ' - β l bonding layer preferably includes multi-arc ion plating or physical vapor deposition, more preferably multi-arc ion plating. In the present invention, the arc current of the multi-arc ion plating is preferably 160 to 200A, more preferably 160 to 200ASelecting 180-190A; the bias voltage is preferably 10 to 30V, more preferably 20 to 25V; the degree of vacuum is preferably 1X 10 -3 ～9×10 -3 Pa, more preferably 5X 10 -3 Pa; the temperature of the substrate in the multi-arc ion plating process is preferably 300-500 ℃, and more preferably 400-450 ℃.
Before the invention adopts multi-arc ion plating to prepare the double-phase gamma' -beta bonding layer, the invention also preferably comprises the following steps: and carrying out sand blasting pretreatment on the surface of the matrix and then machining to enable the shape of the matrix to adapt to physical vapor deposition equipment. In the present invention, the grit for the blast pretreatment is preferably 20 mesh; the pressure of the blasting treatment is preferably 0.1 to 0.5MPa, and more preferably 0.2 to 0.4MPa. In the present invention, the machining preferably further includes: and sequentially polishing and chamfering the machined substrate. In the present invention, the roughness of the substrate surface after the polishing treatment is preferably Ra <0.8, and the polishing mode is not particularly limited as long as the roughness can be achieved. The chamfering treatment of the present invention is not particularly limited, and may be performed in a manner conventional in the art. The invention performs the chamfering process to avoid the occurrence of edge effect.
In the present invention, it is preferable that the chamfering process further includes: and cleaning the chamfered basal body. In the present invention, the cleaning is preferably performed by ultrasonic cleaning in absolute ethyl alcohol and acetone sequentially, and the time of ultrasonic cleaning in absolute ethyl alcohol and the time of ultrasonic cleaning in acetone are independent, preferably 13 to 20min, and more preferably 15 to 18min. In the present invention, the cleaning preferably further comprises: and drying the cleaned matrix. In the invention, the drying temperature is preferably 70-200 ℃, and more preferably 80-150 ℃; the time is preferably 1 to 2 hours, more preferably 1.5 to 1.8 hours.
In the present invention, the physical vapor deposition conditions are preferably: the vacuum degree of the deposition chamber is preferably 1 × 10 -5 ～1×10 -3 Pa, more preferably 0.5X 10 -4 ～1×10 -4 Pa; the substrate rotation rate is preferably 8 to 10r/min, more preferably 9r/min; the temperature of the substrate is preferably 700-800 ℃, and more preferably 750-780 ℃; the beam current is preferably 1.2 to 1.5A, more preferablyPreferably 1.3 to 1.4A; the electron beam voltage is preferably 17 to 19kV, more preferably 17.5 to 18kV. In the present invention, the substrate is a vapor-deposited sample.
Before the preparation of the biphase gamma' -beta bonding layer by adopting physical vapor deposition, the invention also preferably comprises the following steps: and machining the substrate to enable the shape of the substrate to be suitable for physical vapor deposition equipment. In the present invention, the thickness of the prepared biphasic γ' - β adhesive layer is preferably 30 to 100 μm, more preferably 45 to 70 μm.
After the biphase gamma '-beta bonding layer is obtained, the biphase gamma' -beta bonding layer is aluminized to obtain the single-phase beta-NiAl bonding layer. In the invention, the aluminizing treatment mode is preferably chemical vapor deposition, and the aluminizing treatment temperature is preferably 950-1050 ℃, and more preferably 1000 ℃; the time is preferably 3 to 10 hours, more preferably 6 to 8 hours. In the present invention, the raw materials for chemical vapor deposition preferably include an aluminum source, a filler and an activator, and the aluminum source preferably includes aluminum powder or an aluminum alloy; the aluminum alloy includes a NiAl alloy, a CoAl alloy, or a CrAl alloy, and more preferably a NiAl alloy.
The invention also provides a single-phase beta-NiAl bonding layer prepared by the preparation method in the technical scheme, and the single-phase beta-NiA bonding layer comprises the following components in percentage by atom:
Al 30～60at.at.％；
0.02-0.26 at.% of active element;
the balance of Ni.
In the present invention, the single phase β -NiA bonding layer comprises 30 to 60at.% Al, preferably 30 to 40at.%, in atomic percent.
In the present invention, the single phase β -NiA bonding layer comprises 0.05 to 2.00at.% active component, preferably 0.05 to 0.15at.%, in atomic percent. In the present invention, the active component preferably comprises one or more of rare earth elements, hf, zr, and Ti, more preferably one or more of Hf, zr, and Ti; hf and Zr are more preferable. When the rare earth elements comprise more than two of the above specific substances, the atomic ratio of the specific substances is not particularly limited, and any ratio can be adopted. In the present invention, when the active elements are Hf and Zr, the atomic percentage content of Hf is preferably 0.025 to 1at.%, more preferably 0.05 to 0.08at.%; the atomic percentage of Zr is preferably 0.025 to 1at.%, more preferably 0.05 to 0.08at.%.
In the present invention, the single-phase β -NiA bonding layer further includes the balance Ni in atomic percentage.
In the present invention, the thickness of the single-phase β -NiAl bonding layer is preferably 30 to 60 μm, and more preferably 40 to 50 μm.
The single-phase beta-NiA bonding layer provided by the invention has a flat and compact surface, an oxidation film generated on the surface of the bonding layer is straight, and the oxidation resistance of the bonding layer can reach the complete oxidation resistance standard in GB/T13303.91 'determination method for oxidation resistance of steel' and HB5258-2000 'determination test method for oxidation resistance of steel and high-temperature alloy'.
In order to further illustrate the present invention, the following embodiments are described in detail, but they should not be construed as limiting the scope of the present invention.
The weighing means in the examples are electronic balances (model CPA225D, sartorius, precision 10) -5 g)。
Example 1
Preparing a matrix:
cutting the IC21 alloy into a cylindrical sample with the specification of 10mm in diameter and 3mm in thickness by using a wire cutting method, and respectively forming a hole with the diameter of 1mm at each end of the diameter of the sample so as to hang the sample on a bracket when preparing a coating; carrying out sandblasting pretreatment on the cut matrix sample (the mesh number of sand for sandblasting is 20 meshes, the pressure is 0.2 MPa), and then sequentially polishing with No. 320, no. 600 and No. 800 water-milled sand paper to ensure that the surface roughness Ra of the matrix sample is less than 0.8, and completely chamfering the edge into a fillet; ultrasonically cleaning the polished substrate sample for 15min by using absolute ethyl alcohol and acetone in sequence; drying the cleaned matrix sample for 2h at 80 ℃; obtaining a matrix;
preparing a target material:
respectively mixing nickel block, aluminum block and hafniumUltrasonically cleaning the blocks and the zirconium blocks in acetone for 30min and then drying; putting the dried nickel block, aluminum block, hafnium block and zirconium block into an electric arc melting furnace for vacuum melting (the vacuum degree is 10) -4 Pa), turning 4 times in the smelting process, wherein the atom percentage of the aluminum blocks is 30at.%, the atom percentage of the hafnium blocks is 0.05at.%, the atom percentage of the zirconium blocks is 0.05at.%, and the atom percentage of the nickel blocks is 69.9at.%; casting after vacuum melting to obtain a cast ingot;
annealing the cast ingot at 1300 ℃ for 24h, and cooling to 30 ℃ to obtain a beta-gamma' -biphase NiAlHfZr alloy; machining the beta-gamma' biphase NiAlHfZr alloy into a disc-shaped target material with the roughness of 0.5 so as to adapt to multi-arc ion plating equipment;
preparing a bonding layer:
the beta-gamma' biphase NiAlHfZr alloy is subjected to multi-arc ion plating (the current is 180A, the bias voltage is 25V, and the vacuum degree is 5 multiplied by 10) on the surface of a substrate at the temperature of 400 DEG C -3 Pa) to obtain a biphasic gamma' -beta bonding layer with an average thickness of 50 μm;
and (3) aluminizing the two-phase gamma' -beta bonding layer by adopting chemical vapor deposition (1000 ℃,8 h) to obtain the single-phase beta-NiAl bonding layer.
FIG. 1 is a diagram of a sample object containing a single phase β -NiAl bonding layer.
Scanning electron microscope detection is carried out on the prepared biphase gamma' -beta bonding layer to obtain an SEM picture as shown in figure 2. As can be seen from fig. 2, the thickness of the two-phase γ ' - β adhesive layer is 52.48 μm, and the two-phase γ ' - β adhesive layer contains two phases with different contrast, wherein the dark gray color is γ ' phase and the light gray color is β phase.
Scanning electron microscope detection is carried out on the prepared single-phase beta-NiAl bonding layer, and an SEM image is obtained and is shown in figure 3. As can be seen from FIG. 3, the thickness of the single-phase beta-NiAl bonding layer is 48.15 μm, and the single-phase beta-NiAl bonding layer contains a beta single phase with uniform contrast.
The prepared sample containing the single-phase beta-NiAl bonding layer is subjected to oxidation treatment at 1200 ℃ for 100h according to the oxidation resistance determination test method of HB5258-2000 steel and high-temperature alloy. The quality of the samples after different oxidation treatment times is given in table 1.
TABLE 1 quality of the samples after different oxidation treatment times
| Time h of oxidation treatment | |
| 0 | 3.66720 |
| 1 | 3.66800 |
| 4 | 3.66856 |
| 7 | 3.66896 |
| 10 | 3.66942 |
| 20 | 3.67012 |
| 30 | 3.67068 |
| 40 | 3.67116 |
| 50 | 3.67156 |
| 75 | 3.67180 |
| 100 | 3.67200 |
A dot line plot is plotted from the data in table 1, as shown in fig. 4.
It can be seen from the combination of Table 1 and FIG. 4 that the change in mass of the sample after oxidation treatment for 50 hours and 100 hours was 0.9348g/m 2 From HB5258-2000, it can be known that the single-phase beta-NiAl bonding layer prepared by the preparation method provided by the invention reaches the standard of complete oxidation resistance at 1200 ℃.
Although the present invention has been described in detail with reference to the above embodiments, it is only a part of the embodiments of the present invention, not all of the embodiments, and other embodiments can be obtained without inventive step according to the embodiments, and the embodiments are within the scope of the present invention.
Claims (8)
1. A preparation method of a single-phase beta-NiAl bonding layer comprises the following steps:
providing a beta-gamma' -biphase nickel-aluminum alloy containing active elements;
preparing a two-phase gamma '-beta bonding layer on the surface of a substrate by using the beta-gamma' -two-phase nickel-aluminum alloy containing the active elements;
aluminizing the two-phase gamma' -beta bonding layer to obtain a single-phase beta-NiAl bonding layer; the aluminizing treatment mode is chemical vapor deposition, and the aluminizing treatment temperature is 950-1050 ℃; the time is 3 to 10 hours.
2. The method of claim 1, wherein the beta-gamma' -duplex nickel-aluminum alloy containing the active element is prepared by the method comprising the steps of:
smelting an active element, a nickel source and an aluminum source, and then casting to obtain an ingot;
and annealing the cast ingot to obtain the beta-gamma' -biphase nickel-aluminum alloy containing the active elements.
3. The method according to claim 2, wherein the annealing treatment is carried out at 1200-1400 ℃ for 22-26 h.
4. The method of claim 1, wherein the bi-phase γ' - β bonding layer is formed by multi-arc ion plating.
5. The method according to claim 4, wherein the multi-arc ion plating has an arc current of 160 to 200A, a bias voltage of 10 to 30V, and a degree of vacuum of 1X 10 -3 ～9×10 -3 Pa, the temperature of the matrix in the multi-arc ion plating process is 300-500 ℃.
6. The method of claim 1, wherein the substrate comprises an N5 nickel-based single crystal superalloy, an IC21 nickel-based single crystal superalloy, a DD6 nickel-based single crystal superalloy, or an IC31 nickel-based single crystal superalloy.
7. The single-phase beta-NiAl bonding layer prepared by the preparation method of any one of claims 1 to 6, which is characterized by comprising the following components in percentage by atom:
Al 30～60at.％；
0.02-0.26 at.% of active elements;
the balance of Ni.
8. The single phase β -NiAl bonding layer of claim 7, wherein the reactive element comprises one or more of a rare earth element, hf, zr, and Ti.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110794155.7A CN113512702B (en) | 2021-07-14 | 2021-07-14 | Single-phase beta-NiAl bonding layer and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110794155.7A CN113512702B (en) | 2021-07-14 | 2021-07-14 | Single-phase beta-NiAl bonding layer and preparation method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN113512702A CN113512702A (en) | 2021-10-19 |
| CN113512702B true CN113512702B (en) | 2023-02-28 |
Family
ID=78067117
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN202110794155.7A Active CN113512702B (en) | 2021-07-14 | 2021-07-14 | Single-phase beta-NiAl bonding layer and preparation method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN113512702B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114686742B (en) * | 2022-04-02 | 2023-05-16 | 华东理工大学 | Eutectic alloy, preparation method thereof and application of eutectic alloy as thermal barrier coating bonding layer |
| CN114703399A (en) * | 2022-04-12 | 2022-07-05 | 北航（四川）西部国际创新港科技有限公司 | Beta- (Ni, Pt) Al high-temperature-resistant material, application thereof and preparation method of beta- (Ni, Pt) Al bonding layer |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6482469B1 (en) * | 2000-04-11 | 2002-11-19 | General Electric Company | Method of forming an improved aluminide bond coat for a thermal barrier coating system |
| JP2003062658A (en) * | 2001-08-28 | 2003-03-05 | Ueda Seni Kagaku Shinkokai | Compound material of inter-metallic compound and ceramics with metal and its manufacturing method |
| EP1767666A2 (en) * | 2005-09-26 | 2007-03-28 | General Electronic Company | Gamma prime phase-containing nickel aluminide coating |
| CN102181860A (en) * | 2011-03-25 | 2011-09-14 | 上海大学 | Method for forming Pt-modified NiAl+Ni3Al thermal barrier adhering layer on surface of nickel-based super alloy |
| CN105603351A (en) * | 2016-02-19 | 2016-05-25 | 河南普莱姆涂层科技有限公司 | Method for preparing rare earth modified NiAl thermal barrier coating adhesion layer through plasma spraying |
| CN105624522A (en) * | 2014-10-31 | 2016-06-01 | 中国科学院金属研究所 | Single-phase platinum modified aluminide coating and preparation process thereof |
| CN112981325A (en) * | 2021-02-09 | 2021-06-18 | 广东省科学院新材料研究所 | Thermal protection coating and preparation method and application thereof |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0480404B1 (en) * | 1990-10-09 | 1995-07-19 | Daido Tokushuko Kabushiki Kaisha | Corrosion-resistant and heat-resistant metal composite and method of producing |
| US6998151B2 (en) * | 2002-05-10 | 2006-02-14 | General Electric Company | Method for applying a NiAl based coating by an electroplating technique |
| DE602005014877D1 (en) * | 2004-08-18 | 2009-07-23 | Univ Iowa State Res Found Inc | MADE OF -Ni+ '-Ni3Al ALLOYS MODIFIED WITH ONE OF THE PT GROUP AND HAVING HIGH TEMPERATURE CORROSION RESISTANCE |
| US8273231B2 (en) * | 2007-12-21 | 2012-09-25 | Rolls-Royce Corporation | Methods of depositing coatings with γ-Ni + γ′-Ni3A1 phase constitution |
-
2021
- 2021-07-14 CN CN202110794155.7A patent/CN113512702B/en active Active
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6482469B1 (en) * | 2000-04-11 | 2002-11-19 | General Electric Company | Method of forming an improved aluminide bond coat for a thermal barrier coating system |
| JP2003062658A (en) * | 2001-08-28 | 2003-03-05 | Ueda Seni Kagaku Shinkokai | Compound material of inter-metallic compound and ceramics with metal and its manufacturing method |
| EP1767666A2 (en) * | 2005-09-26 | 2007-03-28 | General Electronic Company | Gamma prime phase-containing nickel aluminide coating |
| CN102181860A (en) * | 2011-03-25 | 2011-09-14 | 上海大学 | Method for forming Pt-modified NiAl+Ni3Al thermal barrier adhering layer on surface of nickel-based super alloy |
| CN105624522A (en) * | 2014-10-31 | 2016-06-01 | 中国科学院金属研究所 | Single-phase platinum modified aluminide coating and preparation process thereof |
| CN105603351A (en) * | 2016-02-19 | 2016-05-25 | 河南普莱姆涂层科技有限公司 | Method for preparing rare earth modified NiAl thermal barrier coating adhesion layer through plasma spraying |
| CN112981325A (en) * | 2021-02-09 | 2021-06-18 | 广东省科学院新材料研究所 | Thermal protection coating and preparation method and application thereof |
Non-Patent Citations (3)
| Title |
|---|
| "Microstructure stability of γ′ + β Ni–Al coated single-crystal superalloy N5 annealed at 1100 °C";Jing-Yong Sun et al.;《Rare Metals》;20170905;第40卷;第693–700页 * |
| "电弧离子镀NiAlHf涂层的抗高温氧化性能";陈旋旋等;《表面技术》;20200420(第4期);第303-309页 * |
| 渗铝时间对PtAl涂层高温抗氧化行为的影响;沈月等;《贵金属》;20151115(第04期);第49-54页 * |
Also Published As
| Publication number | Publication date |
|---|---|
| CN113512702A (en) | 2021-10-19 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN113512702B (en) | Single-phase beta-NiAl bonding layer and preparation method thereof | |
| JP2002167636A (en) | Low density oxidation resistant superalloy material capable of thermal barrier coating retention without bond coat | |
| US5498484A (en) | Thermal barrier coating system with hardenable bond coat | |
| US7655321B2 (en) | Component having a coating | |
| CN113151795A (en) | NbMoTaWAl refractory high-entropy alloy film and preparation method thereof | |
| CN113637958B (en) | SiO with high bonding strength 2 /α-Al 2 O 3 Ceramic composite coating and low-temperature preparation method thereof | |
| JP3844607B2 (en) | Method for improving oxidation corrosion resistance of superalloy parts and superalloy parts obtained by the method | |
| CN113652659B (en) | Preparation method of high-entropy alloy nitride coating metallurgically bonded with substrate | |
| CN103966615B (en) | A kind of PtNiAl tack coat of 1200 DEG C of complete antioxidative binary Active trace elements doping and preparation method thereof | |
| CN103590002A (en) | Preparation method for Al-Cr coating on nickel-based superalloy | |
| CN110965035A (en) | Accident fault-tolerant zirconium cladding tube protective coating and preparation method and application thereof | |
| CN101248214B (en) | Method for providing a thermal barrier coating and substrate having such coating | |
| CN110129729A (en) | Nickel-base alloy surface NiCrAlY/NiCrAlY-YSZ/YSZ thermal barrier coating and preparation method thereof | |
| CN114657525A (en) | FeCrAl/Ta alloy coating and preparation method thereof | |
| CN113652644B (en) | TiAl coating capable of improving high-temperature oxidation resistance of titanium alloy and preparation method thereof | |
| FR2932496A1 (en) | Depositing thermal barrier on metal substrate such as turbine blade, comprises depositing first metal coating on substrate to form sub-metal layer, and depositing second ceramic coating on first coating to form ceramic layer | |
| CN111575643A (en) | Method for preparing tantalum diffusion layer on surface of titanium alloy | |
| CN110129733B (en) | Sintered neodymium-iron-boron magnet with composite film layer and preparation method thereof | |
| CN112853288A (en) | Fe-Cr-Al-based protective coating with long-time high-temperature steam oxidation resistance and preparation method thereof | |
| JP2019524983A (en) | Method for protecting hafnium-free nickel-based single crystal superalloy parts from corrosion and oxidation | |
| CN114000118B (en) | Preparation method of titanium alloy surface hardness gradient distribution layer thickness adjustable nitride layer | |
| CN113278931A (en) | Method for thickening magnetron sputtering coating on surface of composite material | |
| CN114086179B (en) | Preparation method of diamond wear-resistant coating on surface of copper matrix | |
| CN116240544A (en) | Method for preparing PVD (physical vapor deposition) composite CVD diamond coating and prepared coating and cutter | |
| CN112063966A (en) | Method for improving high-temperature ablation resistance of molybdenum alloy surface |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |