CN114703399A - Beta- (Ni, Pt) Al high-temperature-resistant material, application thereof and preparation method of beta- (Ni, Pt) Al bonding layer - Google Patents
Beta- (Ni, Pt) Al high-temperature-resistant material, application thereof and preparation method of beta- (Ni, Pt) Al bonding layer Download PDFInfo
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- CN114703399A CN114703399A CN202210377767.0A CN202210377767A CN114703399A CN 114703399 A CN114703399 A CN 114703399A CN 202210377767 A CN202210377767 A CN 202210377767A CN 114703399 A CN114703399 A CN 114703399A
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- 229910052759 nickel Inorganic materials 0.000 title claims abstract description 79
- 229910052697 platinum Inorganic materials 0.000 title claims abstract description 75
- 239000000463 material Substances 0.000 title claims abstract description 32
- 238000002360 preparation method Methods 0.000 title claims abstract description 14
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims abstract description 120
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 29
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 27
- 238000000034 method Methods 0.000 claims abstract description 24
- 229910052735 hafnium Inorganic materials 0.000 claims abstract description 13
- 229910052761 rare earth metal Inorganic materials 0.000 claims abstract description 13
- 229910052726 zirconium Inorganic materials 0.000 claims abstract description 10
- 239000012720 thermal barrier coating Substances 0.000 claims abstract description 7
- 229910052719 titanium Inorganic materials 0.000 claims abstract description 7
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 110
- 239000000758 substrate Substances 0.000 claims description 36
- 238000007747 plating Methods 0.000 claims description 28
- 238000000137 annealing Methods 0.000 claims description 25
- NPXOKRUENSOPAO-UHFFFAOYSA-N Raney nickel Chemical compound [Al].[Ni] NPXOKRUENSOPAO-UHFFFAOYSA-N 0.000 claims description 19
- 229910000838 Al alloy Inorganic materials 0.000 claims description 18
- 238000010438 heat treatment Methods 0.000 claims description 17
- 229910052692 Dysprosium Inorganic materials 0.000 claims description 15
- KBQHZAAAGSGFKK-UHFFFAOYSA-N dysprosium atom Chemical compound [Dy] KBQHZAAAGSGFKK-UHFFFAOYSA-N 0.000 claims description 14
- 238000009713 electroplating Methods 0.000 claims description 14
- LPXPTNMVRIOKMN-UHFFFAOYSA-M sodium nitrite Chemical compound [Na+].[O-]N=O LPXPTNMVRIOKMN-UHFFFAOYSA-M 0.000 claims description 14
- 238000005269 aluminizing Methods 0.000 claims description 13
- PAWQVTBBRAZDMG-UHFFFAOYSA-N 2-(3-bromo-2-fluorophenyl)acetic acid Chemical compound OC(=O)CC1=CC=CC(Br)=C1F PAWQVTBBRAZDMG-UHFFFAOYSA-N 0.000 claims description 7
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 claims description 7
- 229910052684 Cerium Inorganic materials 0.000 claims description 7
- 229910052691 Erbium Inorganic materials 0.000 claims description 7
- 235000011114 ammonium hydroxide Nutrition 0.000 claims description 7
- UYAHIZSMUZPPFV-UHFFFAOYSA-N erbium Chemical compound [Er] UYAHIZSMUZPPFV-UHFFFAOYSA-N 0.000 claims description 7
- 235000010288 sodium nitrite Nutrition 0.000 claims description 7
- 238000003723 Smelting Methods 0.000 claims description 6
- 229910052689 Holmium Inorganic materials 0.000 claims description 5
- 229910052765 Lutetium Inorganic materials 0.000 claims description 5
- 229910052775 Thulium Inorganic materials 0.000 claims description 5
- 238000005266 casting Methods 0.000 claims description 5
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- KJZYNXUDTRRSPN-UHFFFAOYSA-N holmium atom Chemical compound [Ho] KJZYNXUDTRRSPN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052746 lanthanum Inorganic materials 0.000 claims description 5
- FZLIPJUXYLNCLC-UHFFFAOYSA-N lanthanum atom Chemical compound [La] FZLIPJUXYLNCLC-UHFFFAOYSA-N 0.000 claims description 5
- OHSVLFRHMCKCQY-UHFFFAOYSA-N lutetium atom Chemical compound [Lu] OHSVLFRHMCKCQY-UHFFFAOYSA-N 0.000 claims description 5
- CJWLZBLADIYQOV-UHFFFAOYSA-L platinum(2+);dinitrite Chemical compound [Pt+2].[O-]N=O.[O-]N=O CJWLZBLADIYQOV-UHFFFAOYSA-L 0.000 claims description 5
- 239000011819 refractory material Substances 0.000 claims description 4
- 229910052693 Europium Inorganic materials 0.000 claims description 2
- 229910052688 Gadolinium Inorganic materials 0.000 claims description 2
- 229910052779 Neodymium Inorganic materials 0.000 claims description 2
- IOVCWXUNBOPUCH-UHFFFAOYSA-M Nitrite anion Chemical compound [O-]N=O IOVCWXUNBOPUCH-UHFFFAOYSA-M 0.000 claims description 2
- 229910052777 Praseodymium Inorganic materials 0.000 claims description 2
- 229910052773 Promethium Inorganic materials 0.000 claims description 2
- 229910052772 Samarium Inorganic materials 0.000 claims description 2
- 229910052771 Terbium Inorganic materials 0.000 claims description 2
- 229910052769 Ytterbium Inorganic materials 0.000 claims description 2
- OGPBJKLSAFTDLK-UHFFFAOYSA-N europium atom Chemical compound [Eu] OGPBJKLSAFTDLK-UHFFFAOYSA-N 0.000 claims description 2
- UIWYJDYFSGRHKR-UHFFFAOYSA-N gadolinium atom Chemical compound [Gd] UIWYJDYFSGRHKR-UHFFFAOYSA-N 0.000 claims description 2
- 239000007788 liquid Substances 0.000 claims description 2
- QEFYFXOXNSNQGX-UHFFFAOYSA-N neodymium atom Chemical compound [Nd] QEFYFXOXNSNQGX-UHFFFAOYSA-N 0.000 claims description 2
- PUDIUYLPXJFUGB-UHFFFAOYSA-N praseodymium atom Chemical compound [Pr] PUDIUYLPXJFUGB-UHFFFAOYSA-N 0.000 claims description 2
- VQMWBBYLQSCNPO-UHFFFAOYSA-N promethium atom Chemical compound [Pm] VQMWBBYLQSCNPO-UHFFFAOYSA-N 0.000 claims description 2
- KZUNJOHGWZRPMI-UHFFFAOYSA-N samarium atom Chemical compound [Sm] KZUNJOHGWZRPMI-UHFFFAOYSA-N 0.000 claims description 2
- 229910052706 scandium Inorganic materials 0.000 claims description 2
- SIXSYDAISGFNSX-UHFFFAOYSA-N scandium atom Chemical compound [Sc] SIXSYDAISGFNSX-UHFFFAOYSA-N 0.000 claims description 2
- GZCRRIHWUXGPOV-UHFFFAOYSA-N terbium atom Chemical compound [Tb] GZCRRIHWUXGPOV-UHFFFAOYSA-N 0.000 claims description 2
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052727 yttrium Inorganic materials 0.000 claims description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 claims 2
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims 1
- 230000003647 oxidation Effects 0.000 abstract description 23
- 238000007254 oxidation reaction Methods 0.000 abstract description 23
- 239000011159 matrix material Substances 0.000 abstract description 16
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- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 8
- 229910000943 NiAl Inorganic materials 0.000 description 7
- 238000004140 cleaning Methods 0.000 description 7
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- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 description 6
- ZMIGMASIKSOYAM-UHFFFAOYSA-N cerium Chemical compound [Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce][Ce] ZMIGMASIKSOYAM-UHFFFAOYSA-N 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
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- 238000005488 sandblasting Methods 0.000 description 6
- 229910000601 superalloy Inorganic materials 0.000 description 6
- 239000013077 target material Substances 0.000 description 6
- 238000004506 ultrasonic cleaning Methods 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- 238000005240 physical vapour deposition Methods 0.000 description 5
- 239000008367 deionised water Substances 0.000 description 4
- 229910021641 deionized water Inorganic materials 0.000 description 4
- 238000003754 machining Methods 0.000 description 4
- 238000005498 polishing Methods 0.000 description 4
- 239000002904 solvent Substances 0.000 description 4
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 3
- 229910021586 Nickel(II) chloride Inorganic materials 0.000 description 3
- 230000004913 activation Effects 0.000 description 3
- 239000012790 adhesive layer Substances 0.000 description 3
- 238000009792 diffusion process Methods 0.000 description 3
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 description 3
- 229910000765 intermetallic Inorganic materials 0.000 description 3
- 229910000831 Steel Inorganic materials 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000002051 biphasic effect Effects 0.000 description 2
- 239000000919 ceramic Substances 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000007306 turnover Effects 0.000 description 2
- 238000002604 ultrasonography Methods 0.000 description 2
- 239000013585 weight reducing agent Substances 0.000 description 2
- 229910002515 CoAl Inorganic materials 0.000 description 1
- 244000137852 Petrea volubilis Species 0.000 description 1
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 239000012190 activator Substances 0.000 description 1
- 238000005422 blasting Methods 0.000 description 1
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 description 1
- 239000003245 coal Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 125000004122 cyclic group Chemical group 0.000 description 1
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- 239000000945 filler Substances 0.000 description 1
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- 150000002500 ions Chemical group 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- -1 nickel platinum aluminum Chemical compound 0.000 description 1
- 230000001590 oxidative effect Effects 0.000 description 1
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/03—Alloys based on nickel or cobalt based on nickel
-
- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C19/00—Alloys based on nickel or cobalt
- C22C19/007—Alloys based on nickel or cobalt with a light metal (alkali metal Li, Na, K, Rb, Cs; earth alkali metal Be, Mg, Ca, Sr, Ba, Al Ga, Ge, Ti) or B, Si, Zr, Hf, Sc, Y, lanthanides, actinides, as the next major constituent
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C21/00—Alloys based on aluminium
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C30/00—Alloys containing less than 50% by weight of each constituent
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/04—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of aluminium or alloys based thereon
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22F—CHANGING THE PHYSICAL STRUCTURE OF NON-FERROUS METALS AND NON-FERROUS ALLOYS
- C22F1/00—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working
- C22F1/10—Changing the physical structure of non-ferrous metals or alloys by heat treatment or by hot or cold working of nickel or cobalt or alloys based thereon
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C10/00—Solid state diffusion of only metal elements or silicon into metallic material surfaces
- C23C10/06—Solid state diffusion of only metal elements or silicon into metallic material surfaces using gases
- C23C10/08—Solid state diffusion of only metal elements or silicon into metallic material surfaces using gases only one element being diffused
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/14—Metallic material, boron or silicon
- C23C14/16—Metallic material, boron or silicon on metallic substrates or on substrates of boron or silicon
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- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/28—Vacuum evaporation by wave energy or particle radiation
- C23C14/30—Vacuum evaporation by wave energy or particle radiation by electron bombardment
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/24—Vacuum evaporation
- C23C14/32—Vacuum evaporation by explosion; by evaporation and subsequent ionisation of the vapours, e.g. ion-plating
- C23C14/325—Electric arc evaporation
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- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
- C23C28/02—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material
- C23C28/021—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D only coatings only including layers of metallic material including at least one metal alloy layer
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D3/00—Electroplating: Baths therefor
- C25D3/02—Electroplating: Baths therefor from solutions
- C25D3/50—Electroplating: Baths therefor from solutions of platinum group metals
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/10—Electroplating with more than one layer of the same or of different metals
- C25D5/12—Electroplating with more than one layer of the same or of different metals at least one layer being of nickel or chromium
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
- C25D5/48—After-treatment of electroplated surfaces
- C25D5/50—After-treatment of electroplated surfaces by heat-treatment
Abstract
The invention belongs to the technical field of thermal barrier coatings, and particularly relates to a single-phase beta- (Ni, Pt) Al high-temperature-resistant material, application thereof and a preparation method of a single-phase beta- (Ni, Pt) Al bonding layer. The invention provides a single-phase beta- (Ni, Pt) Al high-temperature resistant material, which comprises the following components in atomic percentage: 30-60 at.% Al, 0.04-0.2 at.% active elements, 2-9 at.% Pt and the balance Ni, wherein the active elements comprise two of rare earth elements, Hf, Zr and Ti. In the invention, the platinum can reduce the activity of aluminum in the high-temperature resistant material, thereby inhibiting the aluminum from diffusing to a matrix in the service process of the high-temperature resistant material in a high-temperature environment, reducing the loss of the aluminum in the high-temperature resistant material, avoiding the degradation of beta opposite gamma' phase, and ensuring that the high-temperature resistant material still maintains excellent oxidation resistance in the long-term service in the high-temperature environment.
Description
Technical Field
The invention belongs to the technical field of thermal barrier coatings, and particularly relates to a single-phase beta- (Ni, Pt) Al high-temperature-resistant material, application thereof and a preparation method of a single-phase beta- (Ni, Pt) Al bonding layer.
Background
Thermal barrier coatings are mainly used for hot end components of aircraft engines and generally consist of two parts: a ceramic layer for insulating the alloy component and a bonding layer for resisting high-temperature oxidation corrosion. The bonding layer is positioned between the metal substrate and the ceramic layer, so that the thermal expansion difference between the coating and the substrate is improved, the thermal stress of a system is relieved, and the oxidation of oxygen to the substrate is hindered.
beta-NiAl is a long-range ordered intermetallic compound present in Ni50Al50 alloys. Due to the coexistence characteristic of metallic bond and covalent bond, the melting point Tm of Ni50Al50 is 1638 ℃, and the prerequisite for preparing the bonding layer of the ultrahigh-temperature thermal barrier coating is provided. In addition, Ni50Al50 has low density (5.9g/cm3) and high Young's modulus (240GPa), so that the Ni50Al50 has been widely noticed as a candidate material of a high-temperature structure device for a long time. beta-NiAl has excellent high temperature oxidation resistance, and the high temperature oxidation resistance is mainly based on the capability of forming single complete alpha-Al with low growth rate2O3And (5) oxidizing the film. Bonding layer of beta-NiAl systemThe Al in the beta-NiAl system can be transferred to a matrix in a long-term service under a high-temperature environment, so that the content of the Al in the bonding layer is reduced, and the oxidation resistance of the beta-NiAl system bonding layer is further reduced.
Disclosure of Invention
In view of the above, the invention provides a single-phase beta- (Ni, Pt) Al high-temperature resistant material, an application thereof, and a preparation method of a single-phase beta- (Ni, Pt) Al bonding layer.
In order to solve the technical problems, the invention provides a single-phase beta- (Ni, Pt) Al high-temperature resistant material, which comprises the following components in atomic percentage:
the active elements comprise two of rare earth elements, Hf, Zr and Ti.
Preferably, the rare earth element comprises one or more of lanthanum, cerium, dysprosium, holmium, erbium, thulium and lutetium.
The invention provides the application of the single-phase beta- (Ni, Pt) Al high-temperature resistant material in the technical scheme as a bonding layer in a thermal barrier coating;
the bonding layer is a single-phase beta- (Ni, Pt) Al bonding layer.
The invention also provides a preparation method of the single-phase beta- (Ni, Pt) Al bonding layer in the technical scheme, which comprises the following steps:
providing a beta-gamma' dual-phase nickel-aluminum alloy containing two active elements;
preparing a Pt layer on the surface of a substrate;
preparing a two-phase beta-gamma 'bonding layer on the surface of the Pt layer by using the beta-gamma' two-phase nickel-aluminum alloy containing the two active elements;
and carrying out aluminizing treatment on the two-phase beta-gamma' bonding layer to obtain a single-phase beta- (Ni, Pt) Al bonding layer on the surface of the substrate.
Preferably, the manner of preparing the Pt layer includes electroplating;
the electricity of the electroplatingThe flow density is 0.5-2A/dm2The temperature of the platinum plating solution for electroplating is 90-100 ℃, and the time for electroplating is 15-60 min.
Preferably, the platinum plating solution comprises diammine platinum nitrite, ammonium nitrate, sodium nitrite and ammonia water;
the mass concentration of diammine platinum nitrite in the platinum plating solution is 15-20 g/L, the mass concentration of ammonium nitrate is 98-102 g/L, the mass concentration of sodium nitrite is 8-12 g/L, and the mass concentration of ammonia water is 48-52 g/L.
Preferably, the preparation of the Pt layer further comprises: and carrying out annealing heat treatment on the prepared Pt layer.
Preferably, the aluminizing treatment mode is chemical vapor deposition, and the aluminizing treatment temperature is 950-1050 ℃; the time is 3-10 h.
Preferably, the preparation method of the beta-gamma' -biphase nickel-aluminum alloy containing two active elements comprises the following steps:
smelting two active elements, a nickel source and an aluminum source, and then casting to obtain a cast ingot;
and annealing the cast ingot to obtain the beta-gamma' -biphase nickel-aluminum alloy containing two active elements.
Preferably, the annealing treatment temperature is 1200-1400 ℃, and the time is 22-26 h.
The invention provides a single-phase beta- (Ni, Pt) Al high-temperature resistant material, which comprises the following components in atomic percentage: 30-60 at.% Al, 0.04-0.2 at.% active elements, 2-9 at.% Pt and the balance Ni, wherein the active elements comprise two of rare earth elements, Hf, Zr and Ti. In the invention, the platinum can reduce the activity of aluminum in the high-temperature resistant material, thereby inhibiting the aluminum from diffusing to a matrix in the service process of the high-temperature resistant material in a high-temperature environment, reducing the loss of the aluminum in the high-temperature resistant material, avoiding the degradation of beta opposite gamma' phase, and ensuring that the high-temperature resistant material still maintains excellent oxidation resistance in the long-term service in the high-temperature environment.
Drawings
FIG. 1 is a sample of a single phase β - (Ni, Pt) Al bond coat prepared in example 1;
FIG. 2 is a schematic diagram of the structure of a two-phase β - γ 'bonding layer sample and a single-phase β - (Ni, Pt) Al bonding layer sample prepared in example 1, wherein a is the schematic diagram of the structure of the two-phase β - γ' bonding layer sample, and b is the schematic diagram of the structure of the single-phase β - (Ni, Pt) Al bonding layer sample;
FIG. 3 is a plot of the mass change points of the samples of example 1 and comparative example 1at different oxidation treatment times;
FIG. 4 is a plot of the mass change points of the samples of example 1 and comparative example 2at different oxidation treatment times.
Detailed Description
The invention provides a single-phase beta- (Ni, Pt) Al high-temperature resistant material, which comprises the following components in atomic percentage:
the active elements comprise two of rare earth elements, Hf, Zr and Ti.
In the present invention, the single-phase β - (Ni, Pt) Al refractory material includes 30 to 60 at.% Al, preferably 32 to 51 at.%, and more preferably 35 to 40 at.%, in terms of atomic percentage.
In the invention, the single-phase beta- (Ni, Pt) Al high-temperature resistant material comprises 0.04-0.2 at.% of active element, preferably 0.05-0.15 at.%. In the present invention, the active elements preferably include two of rare earth elements, Hf, Zr, and Ti, and more preferably two of rare earth elements, Hf and Zr; still more preferred are Dy and Hf. In the present invention, the rare earth element preferably includes one or more of lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, yttrium, scandium, and lutetium, more preferably one or more of lanthanum, cerium, dysprosium, holmium, erbium, thulium, and lutetium, still more preferably cerium, dysprosium, or erbium, and most preferably dysprosium. The invention has no special limitation on the mass ratio of the two active elements and can adopt any ratio. In the invention, the mass ratio of the two active elements is preferably 0.02-0.1: 0.02-0.1, and more preferably 1: 1.
In the present inventionThe active element can reduce factors such as interface cavities and the like by preventing the internal diffusion of oxygen element and the external diffusion of aluminum element in the high-temperature oxidation process, improve the adhesion of the oxide film, reduce the growth rate of the oxide film and further improve the oxidation resistance of the high-temperature resistant material. Meanwhile, the addition of the active elements enables the high-temperature resistant material to form alpha-Al on the surface of the high-temperature resistant material in the high-temperature oxidation process2O3The oxide film has better adhesiveness, and is not easy to fall off in the cyclic oxidation process, so that the high-temperature resistant material has longer high-temperature oxidation life.
In the invention, the two active elements can play a synergistic effect to better improve the high temperature resistance of the high temperature resistant material. In the invention, the active element with larger atomic radius than the aluminum element can effectively block the aluminum element from diffusing out, thereby reducing the oxidation rate. The combination of two different active elements can form an ion group with a larger radius than that of a single active element, and the inhibition on the aluminum atom out-diffusion is more obvious, so that the oxidation rate is reduced.
In the present invention, the single-phase β - (Ni, Pt) Al refractory material includes 2 to 9 at.% Pt, preferably 3 to 8 at.%, and more preferably 4 to 7 at.%, in terms of atomic percentage. In the invention, the platinum can reduce the activity of aluminum in the high-temperature resistant material, thereby inhibiting the aluminum from diffusing to a matrix in the service process of the high-temperature resistant material under the high-temperature environment, reducing the loss of the aluminum in the high-temperature resistant material, avoiding the degradation of beta-phase and gamma' -phase, and ensuring that the high-temperature resistant material still maintains excellent oxidation resistance after long-term service under the high-temperature environment.
In the invention, the single-phase beta- (Ni, Pt) Al high-temperature resistant material also comprises Ni in the balance of atomic percentage.
The invention also provides the application of the high-temperature resistant material in the technical scheme as a bonding layer in a thermal barrier coating; the bonding layer is a single-phase beta- (Ni, Pt) Al bonding layer.
In the invention, the thickness of the single-phase beta- (Ni, Pt) Al bonding layer is preferably 20-90 μm, and more preferably 40-60 μm.
The invention also provides a preparation method of the single-phase beta- (Ni, Pt) Al bonding layer in the technical scheme, which comprises the following steps:
providing a beta-gamma' dual-phase nickel-aluminum alloy containing two active elements;
preparing a Pt layer on the surface of a substrate;
preparing a two-phase beta-gamma 'bonding layer on the surface of the Pt layer by using the beta-gamma' two-phase nickel-aluminum alloy containing the two active elements;
and carrying out aluminizing treatment on the two-phase beta-gamma' bonding layer to obtain a single-phase beta- (Ni, Pt) Al bonding layer on the surface of the substrate.
The invention provides a beta-gamma' dual-phase nickel-aluminum alloy containing two active elements. In the present invention, the active elements preferably include two of rare earth elements, Hf, Zr, and Ti, and more preferably two of rare earth elements, Hf, and Zr; dysprosium and Hf are more preferred. In the present invention, the rare earth element preferably includes one or more of lanthanum, cerium, dysprosium, holmium, erbium, thulium, and lutetium, more preferably cerium, dysprosium, or erbium, and still more preferably dysprosium. In the present invention, the active element is preferably provided in the form of a simple metal.
In the present invention, the method for preparing the beta-gamma' -biphase nickel-aluminum alloy containing two active elements preferably comprises the following steps:
smelting two active elements, a nickel source and an aluminum source, and then casting to obtain a cast ingot;
and annealing the cast ingot to obtain the beta-gamma' -biphase nickel-aluminum alloy containing two active elements.
The method comprises the steps of smelting two active elements, a nickel source and an aluminum source, and then casting to obtain the ingot.
In the present invention, the nickel source is preferably a nickel block, and the aluminum source is preferably an aluminum block. In the invention, the atomic percentage of the active element in the ingot is preferably 0.02-0.1 at.%, and more preferably 0.03-0.09 at.%. In the invention, the aluminum source accounts for the ingot preferably at 20-40 at%, more preferably 25-29 at%.
In the present invention, the method further preferably comprises, before the melting: and sequentially cleaning and drying the two active elements, the nickel source and the aluminum source. In the present invention, the cleaning is preferably ultrasonic cleaning, and the solvent for ultrasonic cleaning is preferably acetone; the ultrasonic cleaning time is preferably 25-35 min, and more preferably 30 min; the power of the ultrasound is not specially limited, and the ultrasound can be cleaned. In the present invention, the temperature and time for the drying are not particularly limited as long as the solvent on the surfaces of the active element, the nickel source and the aluminum source can be removed.
In the present invention, the melting is preferably vacuum melting, and the degree of vacuum of the vacuum melting is preferably 1 × 10-5～1×10-4Pa, more preferably 0.51X 10-4～0.81×10-4Pa. The temperature and time of the vacuum melting are not particularly limited, as long as the melting can be achieved. In the smelting process, the turnover is preferably carried out, and the turnover frequency is preferably 4-8 times, and more preferably 5-6 times. The invention can ensure that the components in the ingot are uniformly distributed through the turning. The vacuum melting device is not particularly limited, and the vacuum melting device can be a conventional device in the field, and an arc melting furnace is adopted for vacuum melting in the embodiment of the invention.
After the ingot is obtained, the ingot is annealed to obtain the beta-gamma' -biphase nickel-aluminum alloy containing two active elements. In the invention, the annealing treatment temperature is preferably 1200-1400 ℃, and more preferably 1250-1300 ℃; the time is preferably 22 to 26 hours, and more preferably 24 to 25 hours. In the present invention, the annealing treatment preferably further includes: and cooling the product subjected to the annealing treatment to room temperature, wherein the room temperature is preferably 20-35 ℃, and more preferably 25-30 ℃.
The invention prepares the Pt layer on the surface of the substrate. In the present invention, the substrate preferably comprises a nickel-based superalloy, preferably comprising N5 nickel-based single crystal superalloy, IC21 nickel-based single crystal superalloy, DD6 nickel-based single crystal superalloy, or IC31 nickel-based single crystal superalloy, more preferably IC21 nickel-based single crystal superalloy. The shape and size of the substrate are not particularly limited, and can be set as required.
The invention preferably further comprises, before preparing the platinum layer: sequentially arranging the substratesAnd carrying out sand blasting, activating treatment, washing and nickel plating to obtain the pretreated matrix. The blasting according to the present invention is not particularly limited, and may be performed in a manner conventional in the art. In the present invention, the activation treatment is preferably to soak the sandblasted sample in a hydrochloric acid solution. In the invention, the mass concentration of the hydrochloric acid solution is preferably 5-18%, and more preferably 10-15%. In the invention, the soaking time is preferably 1-3 min, and more preferably 1.5-2.5 min. In the present invention, the washing solvent is preferably water, and the water is preferably deionized water; the number of washing is preferably 3 to 4. In the present invention, the nickel plating is preferably impact nickel plating. In the present invention, the nickel plating solution for nickel plating preferably contains Ni (NH)2SO3)2、NiCl2And H3BO3. The Ni (NH) in the nickel plating solution of the present invention2SO3)2The mass concentration of (A) is preferably 100-150 g/L, more preferably 110-140 g/L; the NiCl2The mass concentration of (b) is preferably 5-100 g/L, more preferably 60-90 g/L; said H3BO3The mass concentration of (b) is preferably 40 to 60g/L, more preferably 45 to 55 g/L. In the invention, the current density of the impact nickel plating is preferably 0.5-4A/dm2More preferably 1 to 3A/dm2(ii) a The temperature of the nickel plating solution is preferably 45-75 ℃, and more preferably 50-70 ℃; the time for impact nickel plating is preferably 0.5-2 min, and more preferably 0.8-1.3 min.
In the present invention, the nickel-plated steel further preferably includes: washing the nickel-plated sample; the washing solvent is preferably water, and the water is preferably deionized water; the number of washing is preferably 3 to 4.
According to the invention, nickel is plated on the surface of the substrate before platinizing, and then platinum is plated on the surface of the nickel layer, so that the binding force between the Pt layer and the substrate is improved.
In the present invention, the manner of preparing the Pt layer preferably includes electroplating; the current density of the electroplating is preferably 0.5-2A/dm2More preferably 0.8 to 1.3A/dm2(ii) a The temperature of the platinum plating solution for electroplating is preferably 65-100 ℃, and more preferably 70-90 ℃; the time of the electroplating is excellentPreferably 15-60 min, more preferably 20-50 min. In the present invention, the platinum plating liquid preferably includes diammineplatinum nitrite, ammonium nitrate, sodium nitrite, and ammonia water. In the invention, the mass concentration of diammine platinum nitrite in the platinum plating solution is preferably 15-20 g/L, and more preferably 16-18 g/L; the mass concentration of the ammonium nitrate is preferably 98-102 g/L, and more preferably 99-100 g/L; the mass concentration of the sodium nitrite is preferably 8-12 g/L, and more preferably 10-11 g/L; the mass concentration of the ammonia water is preferably 48-52 g/L, and more preferably 49-51 g/L.
In the present invention, the thickness of the platinum layer is preferably 2 to 10 μm, and more preferably 3 to 9 μm.
After the Pt layer is prepared, the present invention preferably further includes: and carrying out annealing heat treatment on the prepared Pt layer. In the present invention, the annealing heat treatment preferably includes performing a low-temperature annealing heat treatment and a high-temperature annealing heat treatment in this order. In the invention, the temperature of the low-temperature annealing heat treatment is preferably 260-300 ℃, and more preferably 265-290 ℃; the time of the low-temperature annealing heat treatment is preferably 4-8 hours, and more preferably 4.5-7.5 hours. In the invention, the temperature of the high-temperature annealing heat treatment is preferably 1000-1080 ℃, and more preferably 1030-1070 ℃; the time of the high-temperature annealing heat treatment is preferably 1-3 hours, and more preferably 1.5-2.5 hours. In the present invention, it is preferable to continue heating to the temperature for the high-temperature annealing treatment on the basis of the temperature for the low-temperature annealing treatment. In the invention, the heating rate of the heating is preferably 2-8 ℃/min, and more preferably 4-6 ℃/min. In the present invention, the annealing heat treatment apparatus is preferably a vacuum heat treatment furnace.
In the present invention, the annealing heat treatment diffuses platinum and the substrate to improve the bonding force of the platinum layer and the substrate alloy.
After the Pt layer is obtained, the beta-gamma '-biphase nickel-aluminum alloy containing two active elements is used for preparing a biphase beta-gamma' -bonding layer on the surface of the Pt layer. In the present invention, the manner of preparing the dual phase β - γ' bonding layer preferably comprises multi-arc ion plating or physical vapor deposition, more preferably multi-arc ion plating. In the invention, the arc current of the multi-arc ion plating is preferably 160-200A, and more preferably 180-190A; bias voltage is preferably 10 ^ e30V, more preferably 20-25V; the degree of vacuum is preferably 1X 10-3～9×10-3Pa, more preferably 5X 10-3Pa; the temperature of the substrate in the multi-arc ion plating process is preferably 300-500 ℃, and more preferably 400-450 ℃.
Before the invention adopts multi-arc ion plating to prepare the two-phase beta-gamma' bonding layer, the invention also preferably comprises the following steps: and carrying out sand blasting pretreatment on the surface of the matrix and then machining to enable the shape of the matrix to adapt to physical vapor deposition equipment. In the present invention, the grit for the blast pretreatment is preferably 120 mesh; the pressure of the sand blasting treatment is preferably 0.1-0.5 MPa, and more preferably 0.2-0.4 MPa. In the present invention, the machining preferably further includes: and sequentially polishing and chamfering the machined substrate. In the present invention, the roughness of the substrate surface after the polishing treatment is preferably Ra <0.8, and the polishing mode is not particularly limited as long as the roughness can be achieved. The chamfering treatment of the present invention is not particularly limited, and may be performed in a manner conventional in the art. The invention performs the chamfering process to avoid the occurrence of edge effect.
In the present invention, it is preferable that the chamfering process further includes: and cleaning the chamfered basal body. In the invention, the cleaning is preferably carried out by ultrasonic cleaning in absolute ethyl alcohol and acetone in sequence, and the time of ultrasonic cleaning in absolute ethyl alcohol and the time of ultrasonic cleaning in acetone are independent, preferably 13-20 min, and more preferably 15-18 min. In the present invention, the cleaning preferably further comprises: and drying the cleaned matrix. In the invention, the drying temperature is preferably 70-200 ℃, and more preferably 80-150 ℃; the time is preferably 1 to 2 hours, and more preferably 1.5 to 1.8 hours.
In the present invention, the physical vapor deposition conditions are preferably: the vacuum degree of the deposition chamber is preferably 1 × 10-5～1×10-3Pa, more preferably 0.5X 10-4～1×10-4Pa; the rotation rate of the substrate is preferably 8 to 10r/min, and more preferably 9 r/min; the substrate temperature is preferably 700-800 ℃, and more preferably 750-780 ℃; the electron beam current is preferably 1.2-1.5A, and more preferably 1.3-1.4A; voltage of electron beamPreferably 17 to 19kV, and more preferably 17.5 to 18 kV. In the present invention, the substrate is a vapor-deposited sample.
Before the preparation of the biphase beta-gamma' bonding layer by adopting physical vapor deposition, the invention also preferably comprises the following steps: and machining the substrate to enable the shape of the substrate to be suitable for physical vapor deposition equipment.
After the two-phase beta-gamma 'bonding layer is obtained, the invention carries out aluminizing treatment on the two-phase beta-gamma' bonding layer, and obtains the single-phase beta- (Ni, Pt) Al bonding layer on the surface of the substrate. In the invention, the preferred mode of aluminizing treatment is chemical vapor deposition, and the temperature of aluminizing treatment is preferably 950-1050 ℃, more preferably 990-1000 ℃; the time is preferably 3 to 10 hours, and more preferably 6 to 8 hours. In the present invention, the raw materials for chemical vapor deposition preferably include an aluminum source, a filler and an activator, and the aluminum source preferably includes an aluminum powder or an aluminum alloy; the aluminum alloy includes a NiAl alloy, a CoAl alloy, or a CrAl alloy, and more preferably a NiAl alloy.
In the invention, the bonding layer close to the substrate side is rich in platinum, and the two active elements are dispersed and distributed in the bonding layer in the form of simple substances or intermetallic compounds.
The preparation method provided by the invention utilizes a two-phase target material containing a binary active element to deposit a two-phase bonding layer on a platinized substrate, and then obtains the binary active element doped single-phase beta- (Ni, Pt) Al bonding layer in an aluminizing way; compared with the conventional preparation method for directly utilizing the single-phase target material of the binary active element (which is difficult to refine and process) to deposit the single-phase bonding layer containing the binary active element on the surface of the substrate, the success rate of preparing the bonding layer is greatly improved.
In order to further illustrate the present invention, the following embodiments are described in detail, but they should not be construed as limiting the scope of the present invention.
The weighing means in the examples are electronic balances (model CPA225D, Sartorius, precision 10)-5g)。
Example 1
Preparing a matrix:
using wire-cutting squaresMethod IC21 alloy was cut into cylindrical test specimens (specimen surface area 562 mm) having a gauge diameter of 16.23mm and a thickness of 3.67mm2) Two ends of the diameter of the sample are respectively provided with a hole with the diameter of 1mm, so that the sample can be hung on a bracket when the coating is prepared;
preparing a target material:
respectively ultrasonically cleaning a nickel block, an aluminum block, a hafnium block and a dysprosium block in acetone for 30min and then drying; putting the dried nickel block, aluminum block, hafnium block and dysprosium block into an electric arc melting furnace for vacuum melting (the vacuum degree is 10)-4Pa), turning for 4 times in the smelting process, wherein the atom percentage of the aluminum blocks is 30 at.%, the atom percentage of the hafnium blocks is 0.05 at.%, the atom percentage of the dysprosium blocks is 0.05 at.%, and the atom percentage of the nickel blocks is 69.9 at.%; casting after vacuum melting to obtain an ingot;
annealing the cast ingot at 1300 ℃ for 24h, and cooling to 30 ℃ to obtain a beta-gamma' double-phase NiAlHfDy alloy; machining the beta-gamma' biphase NiAlHfDy alloy into a disc-shaped target material with the roughness Ra of less than 0.5 so as to adapt to multi-arc ion plating equipment;
platinizing:
after sand blasting is carried out on the surface of the prepared matrix sample, the matrix sample is placed in a hydrochloric acid solution with the mass concentration of 12% for activation treatment for 1min, and then the matrix sample is washed for 4 times by deionized water; then, carrying out impact nickel plating on the surface of the sample after the activation treatment, and washing with deionized water for 4 times to obtain a nickel-plated matrix; the nickel plating solution comprises the following components: ni (NH)2SO3)2Has a mass concentration of 120g/L and NiCl2Has a mass concentration of 80g/L and H3BO3The mass concentration of (A) is 50 g/L; the impact nickel plating process comprises the following steps: current density 2A/dm2The temperature of the plating solution is 60 ℃, and the electroplating time is 1 min;
putting the nickel-plated substrate into a platinum plating solution to plate a Pt layer, wherein the platinum plating solution comprises the following components: the mass concentration of diammine platinum nitrite is 17g/L, the mass concentration of ammonium nitrate is 100g/L, the mass concentration of sodium nitrite is 10g/L, and the mass concentration of ammonia water is 50 g/L; the Pt electroplating process parameters are as follows: the current density is 1A/dm2The temperature of the platinum plating solution is 80 ℃, the electroplating time is 30min, and the thickness of the plating layer is 5 mu m.
And after the platinum plating layer is formed, carrying out low-temperature thermal annealing treatment at 280 ℃ for 6h, and heating to 1060 ℃ on the basis of 280 ℃ for high-temperature thermal annealing treatment for 2h to obtain the platinized matrix.
Preparation of a biphasic β - γ' tie layer:
carrying out sand blasting pretreatment on the platinum-plated substrate (the mesh number of sand for sand blasting is 120 meshes, the pressure is 0.2MPa), and then sequentially polishing the platinum-plated substrate by using No. 320, No. 600 and No. 800 water-milled sand paper to ensure that the surface roughness Ra of a substrate sample is less than 0.8, and completely chamfering the edge into a fillet; ultrasonically cleaning the polished substrate sample for 15min by using absolute ethyl alcohol and acetone in sequence; drying the cleaned matrix sample for 2h at 80 ℃; obtaining a pretreated platinized matrix;
the beta-gamma' biphase NiAlHfDy alloy is subjected to multi-arc ion plating (the current is 180A, the bias voltage is 25V, and the vacuum degree is 5 multiplied by 10) on the surface of a platinum plating substrate subjected to pretreatment at the temperature of 400 DEG C-3Pa) to obtain a biphasic beta-gamma' tie layer having an average thickness of 50 μm;
aluminizing treatment:
and (3) carrying out aluminizing treatment (1000 ℃, 8h) on the two-phase beta-gamma' bonding layer by adopting chemical vapor deposition to obtain a single-phase beta- (Ni, Pt) Al bonding layer on the surface of the IC21 alloy.
Example 2
A single phase β - (Ni, Pt) Al bond coat was prepared as in example 1, except that the substrate was replaced with the IC31 alloy and the dysprosium block in the step of preparing the target was replaced with the zirconium block.
Comparative example 1
A bonding layer was prepared according to the method of example 1, except that the platinizing step was omitted and a two-phase β - γ' bonding layer was directly prepared on the surface of the substrate.
Comparative example 2
A bonding layer was prepared according to the method of example 1, except that the target material did not contain an active element, and only a nickel-aluminum alloy was used as the target material.
The contents of the components in the adhesive layers prepared in examples 1 to 2 and comparative examples 1 to 2 are shown in Table 1.
TABLE 1 Components content of adhesive layers prepared in examples 1 to 2 and comparative examples 1 to 2
FIG. 1 is a sample of a single phase β - (Ni, Pt) Al bond layer prepared in example 1.
The structural schematic diagrams of the two-phase β - γ 'bonding layer and the single-phase β - (Ni, Pt) Al bonding layer prepared in example 1 are shown in fig. 2, where a is the structural schematic diagram of the two-phase β - γ' bonding layer and b is the structural schematic diagram of the single-phase β - (Ni, Pt) Al bonding layer. A platinum layer and a beta-gamma 'layer in the two-phase beta-gamma' bonding layer form a two-phase nickel-aluminum layered structure; the obtained single-phase beta- (Ni, Pt) Al bonding layer is formed by fusing platinum, nickel and aluminum, and two active elements are distributed in the nickel platinum aluminum layer in the form of simple substances and intermetallic compounds.
Samples of the bonding layers prepared in example 1 and comparative examples 1-2 were subjected to oxidation treatment at 1200 ℃ for 200 hours according to the oxidation resistance measurement test method of HB5258-2000 steel and high-temperature alloy. The mass gain of the samples after different oxidation treatment times is listed in table 1.
TABLE 1 mass gain of samples after different oxidation treatment times
The data for mass gain for the samples of example 1 and comparative example 1 are plotted in a dot line graph, as shown in fig. 3. It can be known from table 1 and fig. 3 that the weight increase of the single-phase β - (Ni, Pt) Al bonding layer prepared in example 1 is lower than that of the bonding layer prepared in comparative example 1, that is, the single-phase β - (Ni, Pt) Al bonding layer provided by the present invention has better oxidation resistance than the bonding layer without Pt.
The data for mass gain for the samples of example 1 and comparative example 2 are plotted in a dot line graph, as shown in fig. 4. As can be seen from Table 1 and FIG. 4, example 1 was preparedThe obtained single-phase beta- (Ni, Pt) Al bonding layer has no peeling and weight reduction phenomena, while the bonding layer prepared in the comparative example 2 has peeling and weight reduction phenomena after being oxidized for a certain time, namely the oxidation resistance and the alpha-Al of the single-phase beta- (Ni, Pt) Al bonding layer provided by the invention2O3The adhesion property of the oxide film was superior to that of the adhesive layer prepared in comparative example 2.
Although the present invention has been described in detail with reference to the above embodiments, it is only a part of the embodiments of the present invention, not all of the embodiments, and other embodiments can be obtained without inventive step according to the embodiments, and the embodiments are within the scope of the present invention.
Claims (10)
1. A single-phase beta- (Ni, Pt) Al high-temperature resistant material comprises the following components in atomic percentage:
the active elements comprise two of rare earth elements, Hf, Zr and Ti.
2. The single-phase β - (Ni, Pt) Al refractory material of claim 1, wherein the rare earth element comprises one or more of lanthanum, cerium, praseodymium, neodymium, promethium, samarium, europium, gadolinium, terbium, dysprosium, holmium, erbium, thulium, ytterbium, yttrium, scandium, and lutetium.
3. Use of the single phase β - (Ni, Pt) Al refractory material of claim 1 or 2 as a bond coat in a thermal barrier coating;
the bonding layer is a single-phase beta- (Ni, Pt) Al bonding layer.
4. A method of making a single phase β - (Ni, Pt) Al bonding layer according to claim 3, comprising the steps of:
providing a beta-gamma' dual-phase nickel-aluminum alloy containing two active elements;
preparing a Pt layer on the surface of a substrate;
preparing a two-phase beta-gamma 'bonding layer on the surface of the Pt layer by using the beta-gamma' two-phase nickel-aluminum alloy containing the two active elements;
and carrying out aluminizing treatment on the two-phase beta-gamma' bonding layer to obtain a single-phase beta- (Ni, Pt) Al bonding layer on the surface of the substrate.
5. The method according to claim 4, wherein the manner of preparing the Pt layer includes electroplating;
the current density of the electroplating is 0.5-2A/dm2The temperature of the platinum plating solution for electroplating is 90-100 ℃, and the time for electroplating is 15-60 min.
6. The production method according to claim 5, wherein the platinum plating liquid includes diammineplatinum nitrite, ammonium nitrate, sodium nitrite, and ammonia water;
the mass concentration of diammine platinum nitrite in the platinum plating solution is 15-20 g/L, the mass concentration of ammonium nitrate is 98-102 g/L, the mass concentration of sodium nitrite is 8-12 g/L, and the mass concentration of ammonia water is 48-52 g/L.
7. The method according to any one of claims 4 to 6, further comprising, after preparing the Pt layer: and carrying out annealing heat treatment on the prepared Pt layer.
8. The preparation method according to claim 4, wherein the aluminizing treatment is chemical vapor deposition, and the temperature of the aluminizing treatment is 950-1050 ℃; the time is 3-10 h.
9. The method according to claim 4, wherein the method for preparing the beta-gamma' -biphase nickel-aluminum alloy containing two active elements comprises the following steps:
smelting two active elements, a nickel source and an aluminum source, and then casting to obtain a cast ingot;
and annealing the cast ingot to obtain the beta-gamma' -biphase nickel-aluminum alloy containing two active elements.
10. The method according to claim 9, wherein the annealing treatment is carried out at 1200 to 1400 ℃ for 22 to 26 hours.
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| CN202210377767.0A Pending CN114703399A (en) | 2022-04-12 | 2022-04-12 | Beta- (Ni, Pt) Al high-temperature-resistant material, application thereof and preparation method of beta- (Ni, Pt) Al bonding layer |
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Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030118863A1 (en) * | 2001-12-20 | 2003-06-26 | Ramgopal Darolia | Nickel aluminide coating and coating systems formed therewith |
| CN103667795A (en) * | 2013-12-20 | 2014-03-26 | 北京航空航天大学 | Active-element Sc-modified (Ni, Pt)Al high-temperature-oxidation-resisting bonding layer material and preparation method thereof |
| CN103966615A (en) * | 2014-04-11 | 2014-08-06 | 北京航空航天大学 | Pt Ni Al bonding layer doped with binary trace active elements and capable of being completely oxidation resisting at 1200 DEG C and preparation method thereof |
| CN113512702A (en) * | 2021-07-14 | 2021-10-19 | 北航（四川）西部国际创新港科技有限公司 | Single-phase beta-NiAl bonding layer and preparation method thereof |
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2022
- 2022-04-12 CN CN202210377767.0A patent/CN114703399A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030118863A1 (en) * | 2001-12-20 | 2003-06-26 | Ramgopal Darolia | Nickel aluminide coating and coating systems formed therewith |
| CN103667795A (en) * | 2013-12-20 | 2014-03-26 | 北京航空航天大学 | Active-element Sc-modified (Ni, Pt)Al high-temperature-oxidation-resisting bonding layer material and preparation method thereof |
| CN103966615A (en) * | 2014-04-11 | 2014-08-06 | 北京航空航天大学 | Pt Ni Al bonding layer doped with binary trace active elements and capable of being completely oxidation resisting at 1200 DEG C and preparation method thereof |
| CN113512702A (en) * | 2021-07-14 | 2021-10-19 | 北航（四川）西部国际创新港科技有限公司 | Single-phase beta-NiAl bonding layer and preparation method thereof |
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Application publication date: 20220705 |