CN113506754B - Method for detecting photoresist stripping - Google Patents
Method for detecting photoresist stripping Download PDFInfo
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- CN113506754B CN113506754B CN202110718274.4A CN202110718274A CN113506754B CN 113506754 B CN113506754 B CN 113506754B CN 202110718274 A CN202110718274 A CN 202110718274A CN 113506754 B CN113506754 B CN 113506754B
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- 229920002120 photoresistant polymer Polymers 0.000 title claims abstract description 52
- 238000000034 method Methods 0.000 title claims abstract description 39
- 238000012360 testing method Methods 0.000 claims abstract description 61
- 238000001039 wet etching Methods 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 238000001259 photo etching Methods 0.000 claims abstract description 6
- 238000005259 measurement Methods 0.000 claims description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 238000004901 spalling Methods 0.000 claims description 10
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 7
- 229910052751 metal Inorganic materials 0.000 claims description 6
- 239000002184 metal Substances 0.000 claims description 6
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
- 238000004381 surface treatment Methods 0.000 claims description 5
- 238000000206 photolithography Methods 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 230000003113 alkalizing effect Effects 0.000 claims description 2
- 238000004380 ashing Methods 0.000 claims description 2
- 239000011248 coating agent Substances 0.000 claims 1
- 238000000576 coating method Methods 0.000 claims 1
- 238000001514 detection method Methods 0.000 abstract description 22
- 238000005516 engineering process Methods 0.000 abstract description 4
- 239000010408 film Substances 0.000 description 36
- 230000007547 defect Effects 0.000 description 32
- 238000004519 manufacturing process Methods 0.000 description 6
- 238000005530 etching Methods 0.000 description 4
- 239000010409 thin film Substances 0.000 description 4
- 238000005240 physical vapour deposition Methods 0.000 description 3
- 238000002203 pretreatment Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000001066 destructive effect Effects 0.000 description 2
- 238000012850 discrimination method Methods 0.000 description 2
- 238000011156 evaluation Methods 0.000 description 2
- 238000000105 evaporative light scattering detection Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 230000000877 morphologic effect Effects 0.000 description 2
- 238000011165 process development Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000012876 topography Methods 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000012854 evaluation process Methods 0.000 description 1
- 238000000386 microscopy Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000011158 quantitative evaluation Methods 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 238000005070 sampling Methods 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
The application discloses a detection method of photoresist stripping, comprising the following steps: growing a film to be tested on a substrate; covering the film to be tested with a photoresist to be tested; exposing and developing the photoresist by using a photoetching process through a test mask plate to form a test pattern; wet etching is carried out; and detecting the test pattern to evaluate the photoresist stripping phenomenon. According to the method, the to-be-tested photoresist is covered on the film to be tested, the test pattern is formed through photoetching, and wet etching is performed, so that the photoresist stripping phenomenon is evaluated through detecting the test pattern, the problem of poor accuracy caused by evaluating the photoresist stripping phenomenon by detecting whether the photoresist stripping phenomenon is generated only through slicing a sample in the related technology is solved, and the accuracy and the precision of the detection of the photoresist stripping are improved.
Description
Technical Field
The present disclosure relates to the field of semiconductor manufacturing technology, and in particular, to a method for detecting Photo Resist (PR) peeling.
Background
Wet etching using a photoresist as a mask is a common pattern formation method in semiconductor manufacturing, and since wet etching is isotropic etching, sidetrack is formed by lateral etching during etching, and when the sidetrack size and pattern size are close, the photoresist and contact surface are too small to generate photoresist peeling phenomenon, forming defects or affecting the size of the pattern to be formed. Therefore, a detection method is needed to accurately detect whether the defect occurs in real time.
In the related art, the method for detecting photoresist stripping is generally as follows: slice detection or pattern-based defect scanning.
The slice detection is to slice the wafer after wet etching to obtain a detection sample, observe the detection sample through a scanning electron microscope (scanning electron microscope, SEM), and detect whether the detection sample has defects. However, the method is destructive to the wafer, and the slicing technology cannot detect more samples on the same wafer, so that the cost is high, the detection sampling rate is low, and the occurrence degree of defects at different positions in the wafer cannot be accurately and quantitatively estimated, and the position distribution difference is not good; meanwhile, the detection is taken as a destructive test, cannot be used for real-time online detection, and can only be used as a non-online detection means to be taken as auxiliary detection.
The defect scanning of the graph can be used for online detection, but the technology has weak distinguishing and counting capabilities on defect types, and cannot accurately position photoresist stripping defects from a large number of defects and count the occurrence number, so that the defect detection method can only judge whether the defects exist or not and can indirectly infer the degree of stripping defects from the total defect number, and the detection precision is low.
Disclosure of Invention
The application provides a detection method for photoresist stripping, which can simultaneously realize real-time online multipoint mass detection and accurate quantitative evaluation of the same wafer, has a simpler discrimination method and solves the problems of the detection and evaluation methods provided in the prior related art.
In one aspect, an embodiment of the present application provides a method for detecting photoresist stripping, including:
growing a film to be tested on a substrate;
covering the film to be tested with a photoresist to be tested;
exposing and developing the photoresist by using a photoetching process through a test mask plate to form a test pattern;
wet etching is carried out;
and detecting the test pattern and evaluating the photoresist stripping phenomenon.
Optionally, the method according to claim 1, wherein the test pattern is a line pattern.
Optionally, after exposing and developing the photoresist by using a photolithography process, at least two types of test patterns are formed, and the critical dimensions (critical dimension, CD) of the different types of test patterns are different.
Optionally, the test pattern includes a pattern having a critical dimension that is eight times or more the thickness of the thin film to be tested.
Optionally, the critical dimensions of the test patterns of different types are sequentially increased to be arranged.
Optionally, the detecting the test pattern, evaluating the photoresist stripping phenomenon, includes:
determining at least three measurement points at different locations on the substrate, each measurement point containing at least one set of the test patterns;
observing the appearance of the test pattern in each measuring point, and determining whether the photoresist stripping phenomenon occurs or not;
for a measuring point with a photoresistance spalling phenomenon, determining the critical dimension of a test pattern with the minimum critical dimension with the photoresistance spalling phenomenon as a candidate lower limit value corresponding to the measuring point;
among the candidate lower limit values of all the measurement points where the photoresist strip phenomenon occurs, the smallest candidate lower limit value is determined as the lower limit value of the critical dimension;
calculating the proportion of the number of test points with photoresistance spalling phenomenon to all the measurement points;
and measuring the bonding compactness of the photoresist and the film in the wet etching according to the proportion and the lower limit value of the critical dimension.
Optionally, the performing morphological observation on the test pattern in each measurement point includes:
topography observations were made on the test patterns in each of the measurement points by scanning electron microscopy (scanning electron microscope, SEM).
Optionally, the performing morphological observation on the test pattern in each measurement point includes:
and observing the appearance of the test patterns in each measuring point through a microscope.
Optionally, the film to be tested comprises a silicon nitride (SiN) film, silicon dioxide (SiO 2 ) A film, a silicon oxynitride (SiON) film, a silicon film, or a metal film.
Optionally, before the film to be tested is covered with the photoresist to be tested, the method further includes:
and carrying out surface treatment on the film to be tested.
Optionally, the surface treatment of the film to be tested includes:
and dehydrating, hydrophilizing, acidifying, alkalizing or ashing the film to be tested.
The technical scheme of the application at least comprises the following advantages:
the film to be tested is covered with the photoresist to be tested, a test pattern is formed through photoetching, wet etching is carried out, so that the stripping phenomenon of the photoresist is evaluated through detecting the test pattern, and compared with SEM (scanning electron microscope) slice detection, real-time online multipoint detection of the same wafer can be realized, and the judging method is simpler; compared with the defect scanning of the graph, the defect scanning method can quantitatively evaluate the occurrence degree of the defects, so that the defect scanning method can be used for online monitoring of the occurrence condition of the defects, quantitatively evaluating the occurrence degree of the defects, reducing the process development cost and period, improving the production stability of a production line and reducing the failure rate caused by the defects.
Drawings
In order to more clearly illustrate the embodiments of the present application or the technical solutions in the prior art, the drawings that are needed in the description of the embodiments or the prior art will be briefly described below, and it is obvious that the drawings in the following description are some embodiments of the present application, and other drawings may be obtained according to these drawings without inventive effort for a person skilled in the art.
FIG. 1 is a flow chart of a method for detecting photoresist stripping according to an exemplary embodiment of the present application;
fig. 2 is a schematic cross-sectional view of a method for detecting photoresist stripping after wet etching according to an exemplary embodiment of the present application.
Detailed Description
The following description of the embodiments of the present application will be made apparent and complete in conjunction with the accompanying drawings, in which embodiments described are some, but not all, of the embodiments of the present application. All other embodiments, which can be made by one of ordinary skill in the art based on the embodiments herein without making any inventive effort, are intended to be within the scope of the present application.
In the description of the present application, it should be noted that the directions or positional relationships indicated by the terms "center", "upper", "lower", "left", "right", "vertical", "horizontal", "inner", "outer", etc. are based on the directions or positional relationships shown in the drawings, are merely for convenience of description of the present application and to simplify the description, and do not indicate or imply that the devices or elements referred to must have a specific orientation, be configured and operated in a specific orientation, and thus should not be construed as limiting the present application. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance.
In the description of the present application, it should be noted that, unless explicitly specified and limited otherwise, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be either fixedly connected, detachably connected, or integrally connected, for example; can be mechanically or electrically connected; the two components can be directly connected or indirectly connected through an intermediate medium, or can be communicated inside the two components, or can be connected wirelessly or in a wired way. The specific meaning of the terms in this application will be understood by those of ordinary skill in the art in a specific context.
In addition, the technical features described below in the different embodiments of the present application may be combined with each other as long as they do not collide with each other.
Referring to fig. 1, a flowchart of a method for detecting photoresist stripping according to an exemplary embodiment of the present application is shown, the method includes:
step 101, growing a film to be tested on a substrate.
The thin film to be tested may include silicon, a compound of silicon with oxygen and/or nitrogen, or a metal, for example. For example, the film to be tested includes a silicon nitride film, a silicon dioxide film, a silicon oxynitride film, a silicon film, or a metal film (such as a metal of aluminum, copper, tungsten, nickel, or the like).
A silicon nitride film, a silicon oxide film, a silicon oxynitride film, or a silicon film may be grown on the substrate by a chemical vapor deposition (chemical vapor deposition, CVD) process; a metal film may be grown on a substrate by a physical vapor deposition (physical vapor deposition, PVD) process or an electroplating process.
In order to solve the defect of photoresist stripping, pretreatment is usually performed between the photoresist and the substrate, and accordingly, a detection method is also required to quantitatively evaluate the effect of different pretreatment means on the defect improvement.
Alternatively, in the embodiment of the present application, after the film to be tested is grown, the film may be subjected to surface treatment. For example, the film to be tested may be dehydrated, hydrophilic, acidified, alkalized or ashed. By surface treating the film, in a subsequent evaluation step, the improvement ability of the defect by different surface pretreatment methods can be evaluated.
Step 102, covering the film to be tested with the photoresist to be tested.
For example, the thin film to be tested may be covered with the photoresist to be tested by spin coating.
And 103, exposing and developing the photoresist by adopting a photoetching process through a test mask plate to form a test pattern.
Step 104, performing wet etching.
The test mask plate is provided with at least two types of test patterns, and the critical dimensions of the test patterns of different types are different, so that after wet etching, the test patterns with at least two different critical dimensions are formed.
As shown in fig. 2, after performing wet etching, the wet etching is performed to a target depth in the thin film 220 to be tested, so that corresponding wet etched patterns 221, 222, 223 and 224 are formed under the test patterns 301, 302, 303 and 304, respectively, where the critical dimensions of the test patterns 301, 302, 303 and 304 are different (in fig. 2, four test patterns with different critical dimensions are exemplified, and in practical application, may be set according to requirements), and since the wet etching is isotropic etching, there is a certain degree of "sidetracking" (as shown by the dotted line in fig. 2).
Alternatively, in the embodiment of the present application, the test pattern is a line pattern (the line pattern may be rectangular, and may be regarded as a "line" pattern due to its large aspect ratio); optionally, the test patterns comprise patterns with critical dimensions more than eight times the thickness of the film to be tested; optionally, the critical dimensions of the different types of test patterns are sequentially increased for arrangement.
Step 105, detecting the test pattern to evaluate the photoresist stripping phenomenon.
The size of the test pattern can be detected to evaluate the photoresist stripping phenomenon.
Illustratively, step 105 includes, but is not limited to: determining at least three measurement points at different locations on the substrate, each measurement point comprising at least one set of any one of the test patterns described above; observing the appearance of the test patterns in each measuring point to determine whether photoresistance spalling occurs or not; for a measuring point with the photoresistance spalling phenomenon, determining the critical dimension of a test pattern with the minimum critical dimension with the photoresistance spalling phenomenon as a candidate lower limit value corresponding to the measuring point; among the candidate lower limit values of all the measurement points where the photoresist strip phenomenon occurs, the smallest candidate lower limit value is determined as the lower limit value of the critical dimension; calculating the proportion of the number of test points with photoresistance spalling phenomenon to all the measurement points; and measuring the bonding compactness of the photoresistance and the film to be tested in the wet etching according to the proportion and the lower limit value of the critical dimension.
Also, the improvement of the defect by different surface pretreatment methods can be evaluated according to the above method.
For example, the topography may be observed by SEM or microscopy of the test pattern in each measurement point.
In summary, in the embodiment of the present application, the photoresist to be tested is covered on the film to be tested, the test pattern is formed by photolithography, and wet etching is performed, so that the photoresist peeling phenomenon is evaluated by detecting the test pattern, and compared with SEM slice detection, real-time online multipoint mass detection of the same wafer can be achieved, and the discrimination method is simpler; compared with the defect scanning of the graph, the defect scanning method can quantitatively evaluate the occurrence degree of the defects, so that the defect scanning method can be used for online monitoring of the occurrence condition of the defects, quantitatively evaluating the occurrence degree of the defects, reducing the process development cost and period, improving the production stability of a production line and reducing the failure rate caused by the defects.
Optionally, in the embodiment of the present application, after the film to be tested is grown, the film may be subjected to surface treatment, so that in the evaluation process, the improvement capability of the defect by different surface pretreatment methods can be evaluated.
It is apparent that the above examples are given by way of illustration only and are not limiting of the embodiments. Other variations or modifications of the above teachings will be apparent to those of ordinary skill in the art. It is not necessary here nor is it exhaustive of all embodiments. While nevertheless, obvious variations or modifications may be made to the embodiments described herein without departing from the scope of the invention.
Claims (10)
1. A method for detecting photoresist stripping, comprising:
growing a film to be tested on a substrate;
covering the film to be tested with a photoresist to be tested;
exposing and developing the photoresist by using a photoetching process through a test mask plate to form a test pattern;
wet etching is carried out;
determining at least three measurement points at different locations on the substrate, each measurement point containing at least one set of the test patterns;
observing the appearance of the test pattern in each measuring point, and determining whether the photoresist stripping phenomenon occurs or not;
for a measuring point with a photoresistance spalling phenomenon, determining the critical dimension of a test pattern with the minimum critical dimension with the photoresistance spalling phenomenon as a candidate lower limit value corresponding to the measuring point;
among the candidate lower limit values of all the measurement points where the photoresist strip phenomenon occurs, the smallest candidate lower limit value is determined as the lower limit value of the critical dimension;
calculating the proportion of the number of test points with photoresistance spalling phenomenon to all the measurement points;
and measuring the bonding compactness of the photoresist and the film in the wet etching according to the proportion and the lower limit value of the critical dimension.
2. The method of claim 1, wherein the test pattern is a line pattern.
3. The method of claim 2, wherein at least two types of test patterns are formed after exposing and developing the photoresist using a photolithography process, and critical dimensions of the different types of test patterns are different.
4. A method according to claim 3, wherein the test pattern comprises a pattern having a critical dimension that is more than eight times the thickness of the film to be tested.
5. The method of claim 4, wherein the different types of test patterns are arranged with sequentially increasing critical dimensions.
6. The method of claim 1, wherein the topographically observing the test pattern in each of the measurement points comprises:
and carrying out morphology observation on the test patterns in each measuring point through SEM.
7. The method of claim 6, wherein the topographically observing the test pattern in each of the measurement points comprises:
and observing the appearance of the test patterns in each measuring point through a microscope.
8. The method according to any one of claims 1 to 7, wherein the film to be tested comprises a silicon nitride film, a silicon dioxide film, a silicon oxynitride film, a silicon film or a metal film.
9. The method of claim 8, wherein before the coating the photoresist to be tested on the film to be tested, further comprising:
and carrying out surface treatment on the film to be tested.
10. The method of claim 9, wherein the surface treating the film to be tested comprises:
and dehydrating, hydrophilizing, acidifying, alkalizing or ashing the film to be tested.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN202110718274.4A CN113506754B (en) | 2021-06-28 | 2021-06-28 | Method for detecting photoresist stripping |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN202110718274.4A CN113506754B (en) | 2021-06-28 | 2021-06-28 | Method for detecting photoresist stripping |
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| CN113506754A CN113506754A (en) | 2021-10-15 |
| CN113506754B true CN113506754B (en) | 2024-01-23 |
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| CN116149127A (en) * | 2023-03-17 | 2023-05-23 | 广东中图半导体科技股份有限公司 | Mask, patterned substrate and photoetching method thereof |
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