CN113496886B - Method for controlling alkali corrosion removal amount of monocrystalline silicon wafer for integrated circuit - Google Patents

Method for controlling alkali corrosion removal amount of monocrystalline silicon wafer for integrated circuit Download PDF

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CN113496886B
CN113496886B CN202010258257.2A CN202010258257A CN113496886B CN 113496886 B CN113496886 B CN 113496886B CN 202010258257 A CN202010258257 A CN 202010258257A CN 113496886 B CN113496886 B CN 113496886B
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张俊宝
陈猛
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Shanghai Chaosi Semiconductor Co ltd
Chongqing Advanced Silicon Technology Co ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching

Abstract

The invention provides a method for controlling the alkali corrosion removal amount of a monocrystalline silicon piece for an integrated circuit, which adopts KOH to prepare an alkali corrosion solution; by KOH corrosive liquid concentrationcCorrosion temperature T, ultrasonic intensityIAnd ultrasonic frequencyfTo determine the alkali corrosion reaction rate of the monocrystalline silicon waferv(ii) a Amount of alkaline etching to be removed according to process requirementsDAnd rate of corrosionvDetermination of the theoretical time required for the alkaline etchingt e (ii) a According to the theoretical timet e Determining the actual etch timet operation When actual etching timet operation When the value is within the range, the requirements of process production time and silicon wafer quality are well met; when actual etching timet operation When the concentration of KOH corrosive liquid is not in the value range, the process parameter is adjustedcAnd etching temperature T, actual etching timet operation Within a range of values; according to actual etching timet operation Corroding the monocrystalline silicon wafer by using the prepared KOH corrosive liquid, and comparing the actual corrosion removal amount D get And the amount of alkaline corrosion removal required for the processDThe corrosion control effect was confirmed. The invention can control the difference between the two within 5%.

Description

Method for controlling alkali corrosion removal amount of monocrystalline silicon wafer for integrated circuit
Technical Field
The invention relates to a processing method of a monocrystalline silicon wafer for an integrated circuit, in particular to a method for carrying out high-temperature corrosion on a silicon wafer by adopting high-concentration alkali and controlling the removal amount of the silicon wafer.
Background
At present, the subsequent processing procedures of the monocrystalline silicon wafer for the integrated circuit generally adopt the process flows of slicing, grinding, corroding, rough polishing, fine polishing and cleaning. A mechanical stress damage layer having a certain depth formed by stress generated by machining exists on the surface of the ground wafer, and the surface of the monocrystalline silicon wafer is contaminated by impurities such as metal ions. The depth of the processed distortion layer after grinding was about 7 μm. This work deformation layer has contaminants such as abrasives and silicon wafer fragments and impurities left thereon. The presence of the distortion layer deteriorates the surface properties of the wafer, and also causes adverse effects such as the spread of contamination in the production process. Therefore, other methods are needed to remove the damage caused by grinding. This damage is typically removed by chemically etching the surface of the wafer. The chemical etching is that acid or alkali and silicon wafer are chemically reacted at certain concentration and certain temperature to reach homogeneous chemical thinning of the surface of the silicon wafer.
In the prior art, two corrosion methods are commonly adopted: acid etching and alkali etching. Both methods are used and both have their own advantages and disadvantages.
The acid etching is a cocurrent etching, and the general mixture is HNO 3 And HF. Acid etching is a strong process without self-limiting processes in a certain plane. The acid corrosion has the advantages of high reaction speed, heat release in the reaction process and no need of heating. But also has the disadvantage that the nitride produced by the reaction pollutes the environment. The local corrosion rate of the acid bath may vary due to the loss of local chemicals. Because the periphery of the silicon wafer is in competition with the acid liquid, the center of the silicon wafer tends to have insufficient corrosive agent, so that the acid liquid supplied to the center of the silicon wafer is lost, the reaction rate is reduced, the removal allowance of corrosion is difficult to control, the phenomenon of uneven corrosion is caused, and the property of the silicon wafer is influenced.
The alkaline etching is performed by immersing the wafer in a KOH solution at a high temperature (about 100 c) using an alkaline hydroxide such as potassium hydroxide (KOH), and then immersing the wafer again in pure water to block the further reaction between KOH and the wafer surface. The reaction of alkali corrosion is a relatively self-limiting process, KOH can only remove the damage on the surface of a silicon wafer and the residual surface layer with minimum amount, the reaction product is non-toxic and does not pollute the air and the environment, and the waste liquid is easy to treat. However, the reaction rate of the alkaline corrosion is relatively slow, and in order to increase the production rate, a method of increasing the corrosion rate at a high temperature and a high concentration is often adopted, and hydrogen generated by corrosion is removed by ultrasonic waves to prevent the surface roughness from increasing. However, due to the introduction of high temperature, high concentration and high-energy ultrasound, the corrosion of the silicon wafer by alkali deviates from the traditional corrosion theory, and a special machine corrosion mechanism is formed. On the basis of the theory of the traditional corrosion, when the process design is carried out, the deviation of the corrosion removal amount is large, and the yield of the product is influenced. Process pressures are also developed for downstream processes.
Meanwhile, the alkali corrosion has anisotropic characteristics, and when the corrosion deviation is large, particularly the surface roughness is increased at a very high speed during over-corrosion, the TTV of the silicon wafer exceeds the standard in a serious condition.
In order to solve the problems, the invention provides an alkali etching technology for a silicon wafer for an integrated circuit, which can accurately control the removal amount of the silicon wafer under the conditions of high temperature, high concentration and ultrasonic input.
Disclosure of Invention
The invention aims to accurately control the removal allowance of the alkali corrosion silicon wafer and simultaneously control the surface roughness of the silicon wafer under the conditions of high temperature, high concentration and ultrasonic input.
In order to achieve the purpose, the invention provides a method for controlling the alkali corrosion removal amount of a monocrystalline silicon piece for an integrated circuit, which adopts the following technical scheme:
firstly, preparing KOH alkaline corrosive liquid. KOH concentration in the etching solutioncThe range of (A) is as follows: 45 to 55 percent.
Second, pass the KOH corrosive liquid concentrationcCorrosion temperature T, ultrasonic intensityIAnd ultrasonic frequencyfTo determine the alkali corrosion reaction rate of the single crystal silicon waferv。
In conventional corrosion theory, as the reaction temperature increases, the corrosion rate of the silicon wafer increases according to the arrhenius equation:
Figure DEST_PATH_IMAGE002A
wherein the content of the first and second substances,kin order to be a constant of the reaction rate,E α in order to activate the energy, the energy of the catalyst,Tas the reaction temperature, the reaction temperature is,Ris a molar gas constant.
In order to increase the etching rate, high temperature and high concentration methods are generally used in practical processes. However, when the temperature reaches a certain value, the reaction rate rapidly increases, and local reaction on the surface of the silicon wafer tends to be excessively intense. Hydrogen is separated out from the surface of the silicon wafer, and the reaction equation deviates and does not accord with the Arrhenius equation.
Meanwhile, with the increase of the concentration of KOH alkali, the relationship between the concentration and the corrosion rate has larger deviation with the traditional theoretical equation. The ultrasonic input can eliminate the hydrogen generated on the surface of the silicon chip, increase the contact area of the alkali corrosive liquid and the silicon chip and correspondingly improve the reaction speed.
In the control method of the invention, the corrosion speed of KOH alkali on the monocrystalline silicon wafer for the integrated circuitvWith KOH alkali etching solution concentrationcCorrosion temperature ofTAnd input of ultrasonic intensityISum frequencyfThe relationship of (1) is:
Figure 970089DEST_PATH_IMAGE003
(1)
wherein, A is a constant, and,Iis the intensity of the ultrasound, in units of W,fis the ultrasonic intensity frequency, in Hz,E a is the activation energy of the reaction, and is,mis an index of the concentration of corrosion,nis the corrosion temperature index.
Figure 356071DEST_PATH_IMAGE004
(2)
In the formula (I), the compound is shown in the specification,kis a concentration index coefficient, N is the number of silicon wafers put in the corrosion tank, V is the volume of the corrosion tank,tthe etching time is shown. It can be seen that the concentration changes with the corrosion time in the reaction process, and the concentration index also changes with the reaction time, and the concentration decreases with the longer the reaction time, and the reaction speed decreases.
Figure 339071DEST_PATH_IMAGE005
(3)
In the formula (I), the compound is shown in the specification,jis the temperature index coefficient, N is the number of silicon chips put in the corrosion tank,cthe concentration of the alkali corrosion solution is shown as the concentration,tthe etching time is shown.
It can be seen that the corrosion temperature index is gradually increased as the corrosion proceeds, and the increasing speed is gradually decreased due to the decrease of the concentration of the corrosive solution.
Wherein the corrosion temperature T is in the range of: 370-410K.
Intensity of the super field waveIThe range of (A) is as follows: 40-110W, ultrasonic intensity frequencyfThe range of (A) is as follows: 1-5 GHz.
Thirdly, removing the alkali corrosion according to the working procedure requirementDAnd rate of corrosionvDetermination of the theoretical time required for the alkaline etchingt e . Amount of alkali corrosion removal required for the processDRate of corrosionvAnd theoretical time required for alkaline etchingt e The relationship of (1) is:
Figure 468701DEST_PATH_IMAGE006
(4)
the fourth step, according to the theoretical timet e Determining the actual etch timet operation (ii) a Actual corrosion timet operation And theoretical timet e The relationship of (1) is:
Figure DEST_PATH_IMAGE007
(5)
actual time of etchingt operation The value range of (1) is 80-180 s. When actual etching timet operation When the value is within the range, the requirements of procedure production time and silicon wafer quality are well met; when actual etching timet operation When the concentration of the KOH corrosive liquid is not in the value range, the process parameter of the KOH corrosive liquid is adjustedcAnd the etching temperature T, so that the actual etching time ist operation Within a range of values.
When the highest concentration of the corrosive liquid is adoptedcAnd maximum corrosion temperature T, and actual corrosion timet operation Are also out of positionWithin the range of values, a grinding process is adopted to increase the removal amount.
When the lowest concentration of corrosive liquid is adoptedcAnd minimum corrosion temperature T, and actual corrosion timet operation If the value is not within the range, the polishing procedure should be adopted.
The fifth step, according to the actual etching timet operation And corroding the monocrystalline silicon wafer by using KOH corrosive liquid.
Sixthly, comparing the actual corrosion removal quantity D get And the amount of alkaline corrosion removal required for the processDIn order to confirm the corrosion control effect, the requirement is that the relation (6) is satisfied, i.e., the difference between the two is within 5%,
Figure 955177DEST_PATH_IMAGE008
(6)
satisfying equation (6) indicates that the removal amount control effect is excellent.
Drawings
Fig. 1 is a flowchart of a removal amount control method according to the present invention.
DETAILED DESCRIPTION OF EMBODIMENT (S) OF INVENTION
The process of the present invention is described in detail below with reference to specific examples.
Example 1
And (3) corroding the P-type silicon wafer with the high resistivity and the <100> crystal orientation, and placing 25 monocrystalline silicon wafers for the integrated circuit into the alkali tank.
Firstly, preparing KOH alkali corrosive liquid, wherein the concentration of KOH in the corrosive liquidcComprises the following steps: 45 percent.
Secondly, preliminarily determining the corrosion temperature T as 410K and the ultrasonic intensityIIs 40W and ultrasonic frequencyf5GHz to determine the alkali corrosion reaction rate of the monocrystalline silicon waferv. The average etching rate of the silicon wafer under the process condition is 0.043 mu m/s through the equations (1) to (3).
Third, the amount of alkali corrosion removal required for the processD4.1 μm, theoretical time required to obtain alkaline corrosiont e 95.35 s.
The fourth step, according to the theoretical timet e Determining the actual etch timet operation 96.36 s, within the range.
And fifthly, etching is carried out at the time.
And sixthly, measuring the actual removal amount after corrosion to be 4.21 mu m. The difference value between the actual corrosion removal amount and the alkali corrosion removal amount required by the working procedure is 2.68 percent, so that the requirement of precise control is met.
The actual measured surface roughness of the silicon wafer was 0.35 μm. The dual control of thickness precision and surface precision is realized.
Example 2
And (3) corroding the N-type silicon wafer with the <100> crystal orientation, and placing 25 monocrystalline silicon wafers for the integrated circuit into the alkali tank.
Firstly, preparing KOH alkali corrosive liquid, wherein the concentration of KOH in the corrosive liquidcComprises the following steps: and 55 percent.
Secondly, preliminarily determining the corrosion temperature T as 400K and the ultrasonic intensityIIs 80W and ultrasonic frequencyf3 GHz to determine the alkali corrosion reaction rate of the monocrystalline silicon waferv. The average etching speed of the silicon wafer under the process condition is 0.0415 mu m/s obtained through equations (1) - (3).
Third, the amount of alkali corrosion removal required for the processD4.2 μm, theoretical time required to obtain alkaline corrosiont e 101.2 s.
The fourth step, according to the theoretical timet e Determining the actual etch timet operation Is 102.23 s, and is within the range of values.
And a fifth step of performing etching at this time.
And sixthly, measuring the actual removal amount after corrosion to be 4.25 mu m. The difference value between the actual corrosion removal amount and the alkali corrosion removal amount required by the working procedure is 1.19 percent, so that the requirement of precise control is met.
The actual measured surface roughness of the silicon wafer was 0.33 μm. The dual control of thickness precision and surface precision is realized.
Example 3
And (3) corroding the P-type silicon wafer with the <100> crystal orientation, and putting 50 monocrystalline silicon wafers for the integrated circuit into the alkali tank.
Firstly, preparing KOH alkali corrosive liquid, wherein the concentration of KOH in the corrosive liquidcComprises the following steps: and 55 percent.
Secondly, preliminarily determining the corrosion temperature T of 370K and the ultrasonic intensityIIs 90W and ultrasonic frequencyf1 GHz to determine the alkali corrosion reaction rate of the monocrystalline silicon waferv. The average etching rate of the silicon wafer under the process condition is 0.0388 μm/s through the equations (1) to (3).
Third, the amount of alkali corrosion removal required for the processD5.0 μm, theoretical time required to obtain alkaline corrosiont e Is 128.87 s.
The fourth step, according to the theoretical timet e Determining the actual etch timet operation 130.02 s, within the range.
And fifthly, etching is carried out at the time.
And sixthly, measuring the actual removal amount of the copper alloy after corrosion to be 4.89 mu m. The actual and corrosion removal amount is compared with the alkali corrosion removal amount required by the working procedure, and the difference value of the two is 2.2 percent, so that the requirement of precise control is met.
The actual measured silicon wafer surface roughness was 0.36 μm. The double control of thickness precision and surface precision is realized.
Example 4
Etching P-type silicon wafer with <100> crystal orientation, and placing 100 monocrystalline silicon wafers for integrated circuit into the alkali tank.
Firstly, preparing KOH alkali corrosive liquid, wherein the concentration of KOH in the corrosive liquidcComprises the following steps: 50 percent.
Secondly, preliminarily determining the corrosion temperature T to be 393K and the ultrasonic intensityIIs 110W and ultrasonic frequencyf2.5 GHz to determine the alkali corrosion reaction rate of the monocrystalline silicon waferv. The average corrosion rate of the silicon wafer under the process condition is 0.0398 mu m/s through the equations (1) to (3).
Third, the amount of alkali corrosion removal required for the processDIs 6.1 μm, theoretical time required to obtain alkaline corrosiont e 153.27 s.
The fourth step, according to the theoretical timet e Determining the actual etch timet operation Is 154.53 s, and is within the range of values.
And fifthly, etching is carried out at the time.
And sixthly, measuring the actual removal amount after corrosion to be 6.12 mu m. The difference between the actual and corrosion removal amount and the alkali corrosion removal amount required by the working procedure is 0.33 percent, so that the requirement of precise control is met.
The actual measured surface roughness of the silicon wafer was 0.28. Mu.m. The dual control of thickness precision and surface precision is realized.
Example 5
Etching P-type silicon wafer with <100> crystal orientation, and placing 100 monocrystalline silicon wafers for integrated circuit into the alkali tank.
Firstly, preparing KOH alkali corrosive liquid, wherein the concentration of KOH in the corrosive liquidcComprises the following steps: 48 percent.
Secondly, preliminarily determining the corrosion temperature T to be 398K and the ultrasonic intensityIIs 80W and ultrasonic frequencyf4.5 GHz to determine the alkali corrosion reaction rate of the monocrystalline silicon waferv. The average corrosion speed of the silicon wafer under the process condition is 0.0412 mu m/s through the equations (1) - (3).
Third, the amount of alkali corrosion removal required for the processD7.2 μm, theoretical time required to obtain alkaline corrosiont e Is 174.76 s.
The fourth step, according to the theoretical timet e Determining the actual etch timet operation Is 176.11s, and is within the range.
And fifthly, etching is carried out at the time.
And sixthly, measuring the actual removal amount after corrosion to be 7.11 mu m. The difference value between the actual corrosion removal amount and the alkali corrosion removal amount required by the working procedure is 1.25 percent, so that the requirement of precise control is met.
The actual measured surface roughness of the silicon wafer was 0.37 μm. The dual control of thickness precision and surface precision is realized.
Example 6
Etching P-type silicon wafer with <100> crystal orientation, and placing 100 monocrystalline silicon wafers for integrated circuit into the alkali tank.
Firstly, preparing KOH alkali corrosive liquid, wherein the concentration of KOH in the corrosive liquidcComprises the following steps: and 48 percent.
Secondly, preliminarily determining the corrosion temperature T of 398K and the ultrasonic intensityIIs 80W and ultrasonic frequencyf4.5 GHz to determine the alkali corrosion reaction rate of the monocrystalline silicon waferv. The average corrosion speed of the silicon wafer under the process condition is 0.0412 mu m/s through the equations (1) - (3).
Third, the amount of alkali corrosion removal required for the processD7.9 μm, theoretical time required to obtain alkaline corrosiont e 191.75 s.
The fourth step, according to the theoretical timet e Determining the actual etch timet operation 193.16s, which is outside the range. The process parameters are adjusted as follows: the corrosion temperature T is 410K, and the KOH concentration in the corrosive liquidcComprises the following steps: and 55 percent. After recalculation after adjustment, the average etch rate was 0.0443 μm/s. Adjusting the theoretical time required for the post-caustic etchingt e Is 176.34 s. Actual corrosion timet operation Is 177.69s, and is within the range.
And fifthly, etching is carried out at the time.
And sixthly, measuring the actual removal amount after corrosion to be 8.21 mu m. And comparing the actual and corrosion removal amount with the alkali corrosion removal amount required by the working procedure, wherein the difference value of the actual and corrosion removal amount is 3.92%, and the requirement of accurate control is met.
The actual measured silicon wafer surface roughness was 0.39 μm. The dual control of thickness precision and surface precision is realized.
Example 7
Etching P-type silicon wafer with <100> crystal orientation, and placing 100 monocrystalline silicon wafers for integrated circuit into the alkali tank.
Firstly, preparing KOH alkali corrosive liquid, wherein the concentration of KOH in the corrosive liquidcComprises the following steps: and 55 percent.
Secondly, preliminarily determining the corrosion temperature T as 410K and the ultrasonic intensityIIs 110W and ultrasonic frequencyf5GHz to determine the alkali etching reaction rate of the monocrystalline silicon waferv. The average etching rate of the silicon wafer under the process conditions was 0.045 μm/s as obtained by equations (1) to (3).
Third, the amount of alkali corrosion removal required for the processD12.1 μm, theoretical time required to obtain alkaline corrosiont e Is 268.89 s.
The fourth step, according to the theoretical timet e Determining the actual etch timet operation 27.56s, which is not within the range.
Since this parameter is the highest speed of the stable control of the polishing process, the removal amount of the polishing process is increased.
Example 8
Corroding P-type silicon wafer with <100> crystal orientation, and placing 25 monocrystalline silicon wafers for integrated circuit into the alkali tank.
Firstly, preparing KOH alkali corrosive liquid, wherein the concentration of KOH in the corrosive liquidcComprises the following steps: 45 percent.
Secondly, preliminarily determining the corrosion temperature T of 370K and the ultrasonic intensityIIs 40W and ultrasonic frequencyf1 GHz to determine the alkali corrosion reaction rate of the monocrystalline silicon waferv. The average etching rate of the silicon wafer under the process condition is 0.036 mu m/s through the equations (1) to (3).
Third, the amount of alkali corrosion removal required for the processD2.0 μm, theoretical time required to obtain alkaline corrosiont e 55.56 s.
The fourth step, according to the theoretical timet e Determining the actual etch timet operation 56.32s, which is out of the range. This parameter is already the lowest speed for stable control of the process, and therefore the removal amount is increased in the polishing process.

Claims (5)

1. A method for controlling the alkali corrosion removal amount of monocrystalline silicon wafer for integrated circuit includes such steps as providingPreparing an alkali corrosion solution by using KOH; determining the alkali corrosion reaction rate v of the monocrystalline silicon wafer through the concentration c of KOH corrosive liquid, the corrosion temperature T, the ultrasonic intensity I and the ultrasonic frequency f; determining theoretical time t required by alkaline corrosion according to the alkaline corrosion removal amount D and the corrosion speed v required by the process e (ii) a According to theoretical time t e Determining the actual etching time t operation When the actual etching time t operation When the value is within the range, the requirements of procedure production time and silicon wafer quality are well met; when the actual etching time t operation When the concentration of the KOH corrosive liquid is not in the value range, the concentration c of the KOH corrosive liquid and the corrosion temperature T are adjusted to ensure that the actual corrosion time T operation Within a range of values; according to the actual corrosion time t operation Corroding the monocrystalline silicon wafer by using the prepared KOH corrosive liquid, and comparing the actual corrosion removal amount D get And the amount D of alkali corrosion removal required in the process, and the corrosion control effect was confirmed.
2. The method for controlling the alkali etching removal amount of a silicon single crystal wafer for an integrated circuit according to claim 1, wherein the relationship between the etching speed v of KOH alkali on the silicon single crystal wafer for an integrated circuit, the KOH alkali etching solution concentration c, the etching temperature T, the input ultrasonic intensity I, and the frequency f is as follows:
Figure FDA0003826559750000011
wherein A is a constant, I is the ultrasonic intensity in W, f is the ultrasonic intensity frequency in Hz, E a Is reaction activation energy, m is corrosion concentration index, and n is corrosion temperature index;
Figure FDA0003826559750000012
wherein k is a concentration index coefficient, N is the number of silicon wafers put in the etching bath, V is the volume of the etching bath,
t is the etching time;
Figure FDA0003826559750000013
wherein j is a temperature index coefficient, N is the number of silicon wafers put into the etching tank, c is the concentration of the alkali etching solution, and t is the etching time; the range of the corrosion temperature T is as follows: 370 to 410K; the range of ultrasonic intensity I is: 40-110W, and the range of the ultrasonic intensity frequency f is as follows: 1-5 GHz.
3. The method of controlling an amount of alkaline etching removal of a silicon single crystal wafer for an integrated circuit as set forth in claim 1, wherein the amount of alkaline etching removal D, the etching rate v and the theoretical time t required for alkaline etching are required in the process e The relationship of (1) is:
Figure FDA0003826559750000014
4. the method as set forth in claim 1, wherein the actual etching time t is a time t operation And theoretical time t e The relationship of (1) is:
Figure FDA0003826559750000015
actual etching time t operation The value range of (A) is 80-180 s.
5. The method of controlling the amount of alkaline etching removal of a silicon single crystal wafer for integrated circuits as set forth in claim 1, wherein the etching time t is determined in accordance with the actual etching time t operation Corroding the monocrystalline silicon wafer by using the prepared KOH corrosive liquid, and comparing the actual corrosion removal amount D after corrosion get And an alkali etching removal amount D required for the step, which is required to satisfy the relation (6):
Figure FDA0003826559750000021
when the relation (6) is satisfied, the removal amount control effect is excellent.
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