CN113491017A - Phosphor substrate, light-emitting substrate, method for producing phosphor substrate, method for producing light-emitting substrate, and lighting device - Google Patents
Phosphor substrate, light-emitting substrate, method for producing phosphor substrate, method for producing light-emitting substrate, and lighting device Download PDFInfo
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- CN113491017A CN113491017A CN202080015201.2A CN202080015201A CN113491017A CN 113491017 A CN113491017 A CN 113491017A CN 202080015201 A CN202080015201 A CN 202080015201A CN 113491017 A CN113491017 A CN 113491017A
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 title claims abstract description 328
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 66
- 238000000034 method Methods 0.000 claims abstract description 60
- 238000005286 illumination Methods 0.000 claims abstract description 4
- 229910000679 solder Inorganic materials 0.000 claims description 25
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- 229910052727 yttrium Inorganic materials 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/505—Wavelength conversion elements characterised by the shape, e.g. plate or foil
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S2/00—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21S—NON-PORTABLE LIGHTING DEVICES; SYSTEMS THEREOF; VEHICLE LIGHTING DEVICES SPECIALLY ADAPTED FOR VEHICLE EXTERIORS
- F21S2/00—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction
- F21S2/005—Systems of lighting devices, not provided for in main groups F21S4/00 - F21S10/00 or F21S19/00, e.g. of modular construction of modular construction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/483—Containers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/22—Secondary treatment of printed circuits
- H05K3/28—Applying non-metallic protective coatings
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- General Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Led Device Packages (AREA)
- Non-Metallic Protective Coatings For Printed Circuits (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
- Fastening Of Light Sources Or Lamp Holders (AREA)
Abstract
The invention relates to a phosphor substrate, a light-emitting substrate, an illumination device, a method for manufacturing the phosphor substrate, and a method for manufacturing the light-emitting substrate. The phosphor substrate of the present invention is a circuit substrate having at least one electronic component mounted on one surface thereof, and includes: an insulating substrate; a circuit pattern layer disposed on one surface of the insulating substrate, having a plane facing an outer side in a thickness direction of the insulating substrate, and bonded as at least one bonding surface where a part of the plane is bonded to the at least one electronic component; and a phosphor layer which is arranged on at least one non-bonding surface other than the at least one bonding surface in at least the plane and includes a phosphor having an emission peak wavelength in a visible light region when the emission of the at least one light-emitting element is excited, and the phosphor layer has a laminated structure.
Description
Technical Field
The invention relates to a phosphor substrate, a light-emitting substrate, an illumination device, a method for manufacturing the phosphor substrate, and a method for manufacturing the light-emitting substrate.
Background
Patent document 1 discloses an LED lighting fixture including a substrate on which light emitting elements (LED elements) are mounted. The LED lighting device is provided with a reflecting material on the surface of a substrate to improve the luminous efficiency. In the case of the structure disclosed in patent document 1, it is not possible to adjust the light emitted from the LED lighting fixture to a light of a different emission color from the light emitted from the light emitting element by using a reflective material.
Patent document 1: chinese patent laid-open publication No. 106163113
However, the inventors of the present application have found that by providing a phosphor layer on a substrate, it is possible to adjust the light emission color to be different from the light emission color of the light emitting element. Since the substrate mounted with the light-emitting element of patent document 1 does not include a phosphor layer at first, patent document 1 does not disclose any phosphor substrate including a phosphor layer, a light-emitting substrate, and a method for manufacturing the same.
Disclosure of Invention
The invention aims to provide a phosphor substrate provided with a phosphor layer having a multilayer structure.
A phosphor substrate according to a first embodiment of the present invention is a phosphor substrate having at least one light emitting element mounted on one surface thereof, including: an insulating substrate; a circuit pattern layer which is disposed on one surface of the insulating substrate, has a plane surface facing the outer side in the thickness direction of the insulating substrate, and is joined as at least one joining surface for joining a part of the plane surface to the at least one electronic component; and a phosphor layer that is disposed on at least one non-bonding surface that is a portion other than the at least one bonding surface in at least the plane, and that contains a phosphor having an emission peak wavelength in a visible light region when light emission of the at least one light-emitting element is excitation light, wherein the phosphor layer has a laminated structure.
A phosphor substrate according to a second aspect of the present invention is the phosphor substrate according to the first aspect, wherein the at least one light-emitting element is a plurality of light-emitting elements, the at least one bonding surface is a plurality of bonding surfaces, the at least one non-bonding surface is a plurality of non-bonding surfaces, and the plurality of light-emitting elements are arranged on one surface of the insulating substrate and are mounted by being bonded to the plurality of bonding surfaces, respectively.
A phosphor substrate according to a third embodiment of the present invention is the phosphor substrate according to the first embodiment, wherein at least one groove that separates the at least one bonding surface from at least one non-bonding surface that is a portion other than the at least one bonding surface in the plane is formed in the circuit pattern layer.
A phosphor substrate according to a fourth embodiment of the present invention is the phosphor substrate according to the third embodiment, wherein the at least one light-emitting element is a plurality of light-emitting elements, the at least one bonding surface is a plurality of bonding surfaces, the at least one non-bonding surface is a plurality of non-bonding surfaces, the at least one groove is a plurality of grooves, and the plurality of light-emitting elements are arranged on one surface of the insulating substrate and are respectively bonded to and mounted on the plurality of bonding surfaces.
A light-emitting substrate according to a first embodiment of the present invention includes the phosphor substrate according to any one of the first to fourth embodiments; and at least one light emitting element bonded to the at least one bonding surface.
A light-emitting substrate according to a second aspect of the present invention is the light-emitting substrate according to the first aspect, wherein a position in the thickness direction of a surface facing outward in the thickness direction in the phosphor layer is located inward in the thickness direction from a position of a surface facing outward in the thickness direction in the at least one light-emitting element.
A light-emitting substrate according to a third aspect of the present invention is the light-emitting substrate according to the first aspect, wherein a position in the thickness direction of a surface of the phosphor layer facing outward in the thickness direction is located at a center position in the thickness direction of the at least one light-emitting element or located inward in the thickness direction from the center position.
The lighting device of the present invention includes the light-emitting substrate according to any one of the first to third embodiments; and a power supply that supplies power for causing the light emitting element to emit light.
A method for manufacturing a phosphor substrate according to a first embodiment of the present invention includes: a method for manufacturing an insulating substrate, a circuit pattern layer, and a phosphor substrate including a phosphor layer containing a phosphor in which an emission peak wavelength of light emitted from at least one light emitting element is in a visible light region when excited, the method comprising the steps of: a pattern layer forming step of forming a wiring pattern layer on one surface of the insulating substrate; and a phosphor layer forming step of forming the phosphor layer on a part of the wiring pattern layer, wherein the phosphor layer is formed by laminating a phosphor pattern thinner than the thickness of the phosphor layer in the phosphor layer forming step.
A method for manufacturing a phosphor substrate according to a second embodiment of the present invention is the method for manufacturing a phosphor substrate according to the first embodiment, wherein in the phosphor layer forming step, a phosphor pattern having a thickness of 1/n (n.gtoreq.2) of the phosphor layer is formed by being laminated n times by transfer.
A method for manufacturing a phosphor substrate according to a third embodiment of the present invention is the method for manufacturing a phosphor substrate according to the first embodiment, wherein in the phosphor layer forming step, the liquid containing the phosphor is discharged from the discharge unit so that a phosphor pattern having a thickness of 1/n (n ≧ 2) of the phosphor layer is laminated n times while the discharge unit for discharging the liquid is moved relative to the insulating substrate, thereby forming the phosphor layer.
A method for manufacturing a phosphor substrate according to a fourth embodiment of the present invention is the method for manufacturing a phosphor substrate according to the first embodiment, wherein in the phosphor layer forming step, the phosphor layer is formed by causing the discharge unit to discharge a liquid containing the phosphor as droplets so that a phosphor pattern having a thickness of 1/n (n ≧ 2) of the phosphor layer is laminated n times while causing the discharge unit to discharge droplets to move relative to the insulating substrate.
A method for manufacturing a phosphor substrate according to a fifth embodiment of the present invention is the method for manufacturing a phosphor substrate according to the first embodiment, wherein in the phosphor layer forming step, a phosphor pattern having a thickness of 1/n (n.gtoreq.2) of the phosphor layer is formed by printing n times to form the phosphor layer.
A method for manufacturing a phosphor substrate according to a sixth embodiment of the present invention is the method for manufacturing the phosphor substrate according to the fifth embodiment, and the printing is screen printing.
A method for manufacturing a phosphor substrate according to a seventh embodiment of the present invention is the method for manufacturing a phosphor substrate according to any one of the first to sixth embodiments, wherein in the phosphor layer forming step, a phosphor pattern thinner than the thickness of the phosphor layer is laminated, and the phosphor layer is formed to have a thickness of half or less of the thickness of the phosphor layer.
A method for manufacturing a phosphor substrate according to an eighth embodiment of the present invention is the method for manufacturing a phosphor substrate according to any one of the first to seventh embodiments, further including the steps of: a groove forming step of forming at least one groove in a plane facing the outer side in the thickness direction of the insulating substrate in the circuit pattern layer, the groove forming step being performed after the pattern layer forming step and before the phosphor layer forming step; and a solder disposing step of disposing a solder for bonding at least one light emitting element to one portion via the at least one groove in the plane, the solder being performed before the phosphor layer forming step.
A method for manufacturing a light-emitting substrate according to a first embodiment of the present invention includes: the method for producing a phosphor substrate according to any one of the first to eighth embodiments; and a bonding step of bonding the at least one light-emitting element to a part of the circuit pattern layer.
A method for manufacturing a light-emitting substrate according to a second embodiment of the present invention includes: a method for manufacturing a phosphor substrate according to an eighth embodiment; and a bonding step of bonding the at least one light emitting element to a part of the circuit pattern layer and another part of the circuit pattern layer with the at least one groove in the plane interposed therebetween.
A method for manufacturing a light-emitting substrate according to a third embodiment of the present invention is the method for manufacturing a light-emitting substrate according to the first or second embodiment, and the bonding step is performed after the phosphor layer forming step.
A method for manufacturing a light-emitting substrate according to a fourth embodiment of the present invention is the method for manufacturing a light-emitting substrate according to the first or second embodiment, wherein in the bonding step, the solder is melted after applying flux to the solder, and the at least one light-emitting element is bonded to the other portion.
The present invention can provide a light-emitting substrate having a multilayer phosphor layer.
Drawings
Fig. 1A is a plan view of the light-emitting substrate of the present embodiment.
Fig. 1B is a bottom view of the light-emitting substrate of the present embodiment.
Fig. 1C is a partial cross-sectional view of the light-emitting substrate cut along the 1C-1C cut line of fig. 1A.
Fig. 2A is a plan view of the phosphor substrate (phosphor layer is omitted) of the present embodiment.
Fig. 2B is a plan view of the phosphor substrate of the present embodiment.
Fig. 3A is an explanatory view of a first step of the method for manufacturing a light-emitting substrate according to the present embodiment.
Fig. 3B is an explanatory view of a second step of the method for manufacturing a light-emitting substrate according to the present embodiment.
Fig. 3C is an explanatory view of a third step of the method for manufacturing a light-emitting substrate according to the present embodiment.
Fig. 3D is an explanatory view of a third step (first half) of the method for manufacturing a light-emitting substrate according to the present embodiment.
Fig. 3E is an explanatory view of a third step (second half) of the method for manufacturing a light-emitting substrate according to the present embodiment.
Fig. 3F is an explanatory view of a fourth step of the method for manufacturing a light-emitting substrate according to the present embodiment.
Fig. 4 is a diagram for explaining a light emitting operation of the light emitting substrate of the present embodiment.
Fig. 5 is a diagram for explaining a light emitting operation of the light emitting substrate in the comparative embodiment.
Fig. 6A is an explanatory view of a third step of the method for manufacturing a light-emitting substrate according to the first modification.
Fig. 6B is an explanatory view of a third step of the method for manufacturing a light-emitting substrate according to the second modification.
Fig. 6C is an explanatory view of a method for manufacturing a light-emitting substrate according to a third modification.
Detailed Description
Brief summary of the invention
The structure and function of the light-emitting substrate 10 (an example of a mounting substrate) according to the present embodiment will be described below with reference to fig. 1A to 1C. Next, a method for manufacturing the light-emitting substrate 10 of the present embodiment will be described with reference to fig. 3A to 3F. Next, a light emitting operation of the light emitting substrate 10 of the present embodiment will be described with reference to fig. 4. Next, the effects of the present embodiment will be described with reference to fig. 4 and the like. In the following description, the same components are denoted by the same reference numerals throughout the drawings to be referred to, and the description thereof will be omitted as appropriate.
Structure and function of light-emitting substrate of this embodiment
Fig. 1A is a plan view (view seen from the front surface 31) of the light-emitting substrate 10 of the present embodiment, and fig. 1B is a bottom view (view seen from the rear surface 33) of the light-emitting substrate 10 of the present embodiment. Fig. 1C is a partial cross-sectional view of the light-emitting substrate 10 cut along the 1C-1C cut line of fig. 1A.
The light-emitting substrate 10 of the present embodiment is formed in a rectangular shape as an example when viewed from the front surface 31 and the rear surface 33. The light-emitting substrate 10 of the present embodiment includes a plurality of light-emitting elements 20 (an example of an electronic component), a phosphor substrate 30, a connector, and an electronic component (not shown) such as a driver IC. That is, in the light-emitting substrate 10 of the present embodiment, the plurality of light-emitting elements 20 and the electronic components are mounted on the phosphor substrate 30.
The light-emitting substrate 10 of the present embodiment has a function of emitting light when power is supplied from an external power supply (not shown) through direct connection of a lead wire or via a connector. Therefore, the light-emitting substrate 10 of the present embodiment is used as a main optical component of, for example, a lighting device (not shown).
< multiple light emitting elements >
Each of the light-emitting elements 20 is, as an example, a CSP (Chip Scale Package) incorporating a flip-Chip LED22 (hereinafter referred to as an LED 22) (see fig. 1C). As shown in fig. 1C, the CSP is preferably such that the entire periphery (five surfaces) except the bottom surface of the LED22 is covered with the phosphor sealing layer 24. The phosphor sealing layer 24 contains a phosphor, and the light of the LED22 is color-converted by the phosphor of the phosphor sealing layer 24 and emitted to the outside. As shown in fig. 1A, the plurality of light-emitting elements 20 are mounted on the phosphor substrate 30 in a state of being regularly arranged over the entire surface 31 (an example of one surface) of the phosphor substrate 30. In addition, the correlated color temperature of light emitted from each light emitting element 20 of the present embodiment is 3, 018K as an example. In addition, when the plurality of light emitting elements 20 perform a light emitting operation, heat is radiated (cooled) from the phosphor substrate 30 to a temperature controlled from a normal temperature of 50 to 100 ℃ by using a heat sink (not shown) or a cooling fan (not shown).
In this specification, the meaning of "to" used in a numerical range is described in complement, and for example, "50 ℃ to 100 ℃" means "50 ℃ to 100 ℃. In the present specification, "to" used in a numerical range means "not less than a portion described before" to "and not more than a portion described after" to ".
< phosphor substrate >
Fig. 2A is a diagram of the phosphor substrate 30 of the present embodiment, and is a plan view (a view seen from the front surface 31) in which the phosphor layer 36 is omitted. Fig. 2B is a plan view (view viewed from the surface 31) of the phosphor substrate 30 of the present embodiment. The bottom view of the phosphor substrate 30 of the present embodiment is the same as the view of the light-emitting substrate 10 viewed from the rear surface 33. The partial cross-sectional view of the phosphor substrate 30 of the present embodiment is the same as that in the case where the light-emitting element 20 is removed from the partial cross-sectional view of fig. 1C. That is, the phosphor substrate 30 of the present embodiment is formed in a rectangular shape as an example when viewed from the front surface 31 and the rear surface 33.
The phosphor substrate 30 of the present embodiment includes an insulating layer 32 (an example of an insulating substrate), a circuit pattern layer 34, a phosphor layer 36, and a back surface pattern layer 38 (see fig. 1B, 1C, 2A, and 2B). Although the phosphor layer 36 is omitted in fig. 2A, the phosphor layer 36 is disposed on the surface 31 of the insulating layer 32 and the circuit pattern layer 34, as shown in fig. 2B, as an example, except for a plurality of electrode pairs 34A described later.
As shown in fig. 1B and 2A, through holes 39 are formed at six positions, namely, four positions near the four corners and two positions near the center of the phosphor substrate 30. The six-position through-holes 39 are used as positioning holes in the manufacture of the phosphor substrate 30 and the light-emitting substrate 10. The six-position through-holes 39 are used as mounting screw holes for securing a heat radiation effect (preventing warpage and floating of the substrate) to the lamp housing. The phosphor substrate 30 of the present embodiment is manufactured by processing (etching or the like) both face plates (hereinafter, referred to as mother plate MB., see fig. 3A) having copper foil layers provided on both surfaces of an insulating plate, as described later, but CS-3305A manufactured by richhang industries co.
[ insulating layer ]
Hereinafter, the main features of the insulating layer 32 of the present embodiment will be described.
As described above, the shape is rectangular when viewed from the front surface 31 and the back surface 33 as an example.
As an example, the material is an insulating material containing bismaleimide resin and glass cloth. In addition, the insulating material does not contain halogen and phosphorus (halogen-free, phosphorus-free).
As an example, the thickness is 100 μm to 200. mu.m.
The Coefficient of Thermal Expansion (CTE) in the longitudinal direction and the transverse direction is, as an example, 10 ppm/DEG C or less in the range of 50 ℃ to 100 ℃. From one point of view, the Coefficient of Thermal Expansion (CTE) in the longitudinal direction and the lateral direction is, for example, 6 ppm/K. This value is approximately the same as that in the case of the light-emitting element 20 of the present embodiment (within 90% to 110%, i.e., ± 10%).
As an example, the glass transition temperature is higher than 300 ℃.
As an example, the storage modulus is greater than 1.0X 10 in the range of 100 ℃ to 300 ℃10Pa is less than 1.0X 1011Pa。
As an example, the flexural moduli in the longitudinal direction and the transverse direction are normally 35GPa and 34GPa, respectively.
As an example, the thermal flexural modulus of elasticity in the machine direction as well as in the transverse direction is 19GPa at 250 ℃.
As an example, the water absorption was 0.13% when left standing at a temperature of 23 ℃ for 24 hours.
As an example, the dielectric constant is 4.6 at 1MHz normal.
As an example, the dielectric loss tangent at 1MHz is 0.010 in normal.
[ Circuit Pattern layer ]
The circuit pattern layer 34 of the present embodiment is a metal layer provided on the surface 31 side of the insulating layer 32. The circuit pattern layer 34 of the present embodiment is a copper foil layer (Cu layer) as an example. In other words, the circuit pattern layer 34 of the present embodiment is a plane formed by including copper at least on a surface thereof (a surface facing outward in the thickness direction of the insulating layer 32).
The circuit pattern layer 34 is a pattern provided on the insulating layer 32, and is electrically connected to a terminal (not shown) to which a connector (not shown) is to be connected. The circuit pattern layer 34 supplies power supplied from an external power source (not shown) via a connector to the plurality of light-emitting elements 20 when the light-emitting substrate 10 is configured. Therefore, a part of the circuit pattern layer 34 is a plurality of electrode pairs 34A to which the plurality of light emitting elements 20 are bonded, respectively. That is, the circuit pattern layer 34 of the light-emitting substrate 10 of the present embodiment is disposed on the insulating layer 32 and connected to each light-emitting element 20. In addition, from one viewpoint, the circuit pattern layer 34 of the phosphor substrate 30 of the present embodiment is disposed on the insulating layer 32 and connected to the light emitting elements 20 through the electrode pairs 34A. Here, in the present specification, the surface of each electrode pair 34A is referred to as a bonding surface 34A 1. As shown in fig. 1C, 2A, 4, and the like, the bonding surfaces 34a1 are formed on one side with the grooves 34E on the surface (flat surface) of the circuit pattern layer interposed therebetween.
As described above, since the plurality of light-emitting elements 20 of the light-emitting substrate 10 of the present embodiment are regularly arranged over the entire surface 31, the plurality of electrode pairs 34A are also regularly arranged over the entire surface 31 (see fig. 2A). The portion of the circuit pattern layer 34 other than the plurality of electrode pairs 34A is referred to as a wiring portion 34B. Here, the wiring portion 34B is not a portion to be bonded to each light emitting element 20, and therefore, in this specification, the surface of the wiring portion 34B is referred to as a non-bonding surface 34B 1. In other words, as shown in fig. 1C, 2A, 4, and the like, each non-bonding surface 34B1 is a surface opposite to each bonding surface 34a1 with each groove 34E on the surface (plane) of the circuit pattern layer interposed therebetween. That is, in the circuit pattern layer 34 of the present embodiment, a plurality of grooves 34E are formed to separate the plurality of bonding surfaces 34a1 from the plurality of non-bonding surfaces 34B 1.
The region of the surface 31 of the insulating layer 32 where the circuit pattern layer 34 is disposed (the exclusive area of the circuit pattern layer 34) is, for example, a region (area) of 60% or more of the surface 31 of the insulating layer 32 (see fig. 2A). In the present embodiment, each bonding surface 34a1 and each non-bonding surface 34B1 are located at the same position in the thickness direction of the insulating layer 32 (see fig. 1C, 3F, and the like).
[ phosphor layer ]
As shown in fig. 2B, the phosphor layer 36 of the present embodiment is disposed, as an example, in a portion other than the plurality of electrode pairs 34A and the grooves 34E in the surface 31 of the insulating layer 32 and the circuit pattern layer 34. That is, the phosphor layer 36 is disposed in a region other than the plurality of electrode pairs 34A and the grooves 34E in the circuit pattern layer 34. In other words, at least a part of the phosphor layer 36 is disposed around each bonding surface 34a1 adjacent to the plurality of grooves 34E and each groove 34E in the front surface 31 (see fig. 1C and 2B). From one viewpoint, at least a part of the phosphor layer 36 is arranged so as to surround the periphery of each bonding surface 34a1 over the entire periphery when viewed from the front surface 31 side. In the present embodiment, the region of the surface 31 of the insulating layer 32 where the phosphor layer 36 is disposed is, for example, 80% or more of the region of the surface 31 of the insulating layer 32.
The surface of the insulating layer 32 on the outer side in the thickness direction of the phosphor layer 36 is located on the outer side in the thickness direction than the bonding surface 34a1 of the circuit pattern layer 34 (see fig. 1C). The phosphor layer 36 of the present embodiment has an opposing surface 36A (see fig. 1C) that faces the light emitting element 20 at the boundary with the groove 34E of each non-bonding surface 34B 1. In the present embodiment, as an example, the position in the thickness direction of the outer surface (outward surface) in the thickness direction of the insulating layer 32 in the phosphor layer 36 is located at the center in the thickness direction of each light emitting element 20 (see fig. 1C). However, the position in the thickness direction of the surface on the outer side in the thickness direction of the insulating layer 32 in the phosphor layer 36 is preferably located on the inner side in the thickness direction than the center in the thickness direction of each light emitting element 20. The reason for this is to ensure the light-emitting effect of each light-emitting element 20.
The phosphor layer 36 of the present embodiment is an insulating layer containing a phosphor and a binder described later as an example. The phosphor contained in the phosphor layer 36 is fine particles held in a state of being dispersed in a binder, and has a property of exciting light emitted from the LED22 of each light emitting element 20 as excitation light. Specifically, the phosphor of the present embodiment has a property that the emission peak wavelength of the light emitted from the LED22 of the light-emitting element 20 as excitation light is in the visible light region. The adhesive may be, for example, epoxy, acrylate, silicone, or the like, as long as it has insulation properties equivalent to those of the adhesive contained in the solder resist.
(specific example of phosphor)
Here, the phosphor contained in the phosphor layer 36 of the present embodiment is, as an example, at least one or more phosphors selected from the group consisting of an α -type sialon phosphor containing Eu, a β -type sialon phosphor containing Eu, a CASN phosphor containing Eu, and a SCASN phosphor containing Eu. The phosphor is an example of the present embodiment, and may be a phosphor other than the above phosphor, such as a phosphor excited by visible light of YAG, LuAG, or BOS.
The Eu-containing alpha-sialon phosphor is represented by the general formula: mxEuySi12-(m+n)Al(m+n)OnN16-nTo indicate. In the above general formula, M is at least 1 element selected from the group consisting of Li, Mg, Ca, Y and lanthanides (excluding La and Ce), wherein, when the valence of M is a, ax +2Y is M, x is 0 < x.ltoreq.1.5, 0.3. ltoreq. M < 4.5, and 0 < n < 2.25.
The beta-sialon phosphor containing Eu is represented by the general formula: si6-zAlzOzN8-zDivalent europium (Eu) is dissolved in a beta-sialon represented by (z is 0.005 to 1)2+) A phosphor as a light emission center.
The nitride phosphor includes a CASN phosphor containing Eu, a SCASN phosphor containing Eu, and the like.
The Eu-containing CASN phosphor (an example of a nitride phosphor) is represented by the formula CaAlSiN 3：Eu2+Expressed as Eu2+A red phosphor containing a crystal composed of an alkaline earth silicon nitride as a matrix as an activator. In the definition of the Eu-containing CASN phosphor in the present specification, the Eu-containing SCASN phosphor is removed.
The Eu-containing SCASN phosphor (an example of a nitride phosphor) is represented by, for example, the formula (Sr, Ca) AlSiN3：Eu2+Expressed as Eu2+A red phosphor containing a crystal composed of an alkaline earth silicon nitride as a matrix as an activator.
[ Back surface pattern layer ]
The back surface pattern layer 38 of the present embodiment is a metal layer provided on the back surface 33 side of the insulating layer 32. As an example, the back surface pattern layer 38 of the present embodiment is a copper foil layer (Cu layer).
As shown in fig. 1B, the back surface pattern layer 38 is a layer in which a plurality of rectangular blocks linearly arranged along the longitudinal direction of the insulating layer 32 are adjacently arranged so as to be shifted in phase in the short side direction.
Further, as an example, the back pattern layer 38 is an independent floating layer. The back surface pattern layer 38 overlaps, for example, 80% or more of the area of the circuit pattern layer 34 disposed on the front surface 31 in the thickness direction of the insulating layer 32 (phosphor substrate 30).
The above description is directed to the structures of the light-emitting substrate 10 and the phosphor substrate 30 of the present embodiment.
Method for manufacturing light-emitting substrate of this embodiment
Next, a method for manufacturing the light-emitting substrate 10 of the present embodiment will be described with reference to fig. 3A to 3F. The method of manufacturing the light-emitting substrate 10 of the present embodiment includes a first step, a second step, a third step, a fourth step, and a fifth step, and the steps are performed in the order described in these steps.
< first step >
Fig. 3A is a diagram showing the start and end of the first step. The first step is a step of forming a pattern 34C (an example of a conductive pattern layer) identical to the circuit pattern layer 34 as viewed in the thickness direction on the front surface 31 of the mother board MB, and forming a back surface pattern layer 38 on the back surface 33. This step is performed by, for example, etching using a mask pattern (not shown). This step is an example of a pattern layer forming step.
< second step >
Fig. 3B is a diagram showing the start and end of the second step. The second step is a step of forming a plurality of grooves 34E on the surface of the pattern 34C. This step is performed by, for example, etching using a mask pattern (not shown). When this step is completed, the circuit pattern layer 34 is formed. That is, when the present step is completed, the joint surface 34a1 and the non-joint surface 34B1 are formed on both sides with the grooves 34E therebetween. This step is an example of the groove forming step.
< third Process step >
Fig. 3C is a diagram showing the start and end of the third step. The third step is a step of disposing (in other words, applying) the solder SP on each bonding surface 34a1 of the circuit pattern layer 34. This step is performed by printing as an example. This step is an example of a solder placement step.
< fourth step >
Fig. 3D is a view showing the start of the fourth step and the first layer application. Fig. 3E is a view showing the second layer coating and the third layer coating in the fourth step. The fourth step is a step of forming the phosphor layer 36 on the entire region of each non-bonding surface 34B1 in the circuit pattern layer 34. In this step, the phosphor layer 36 is disposed by laminating the phosphor patterns 361, 362, and 363 having a thickness of 1/3 of the phosphor layer 36 three times by, for example, transfer. In this step, as an example, the phosphor layer 36 is applied so that the position in the thickness direction of the surface of the phosphor layer 36 facing the outside in the thickness direction of the insulating layer 32 is located at the center in the thickness direction of each light-emitting element 20 bonded to the circuit pattern layer 34. In other words, in this step, the phosphor layer 36 is coated so that the thickness of the phosphor layer 36 is equal to or less than half the thickness of each light emitting element 20. However, for the above reasons, the thickness of the phosphor layer 36 is preferably not more than half the thickness of each light emitting element 20. This step is an example of the phosphor layer disposing step.
< fifth step >
Fig. 3F is a diagram showing the start and end of the fifth step. The fifth step is a step of mounting a plurality of light emitting elements 20 on the phosphor substrate 30. In this step, the solder SP is melted in a state where the electrodes of the plurality of light emitting elements 20 are aligned with the bonding surfaces 34a1 on which the solder SP is arranged in the third step. Then, when the solder SP is cooled and solidified, the light emitting elements 20 are bonded to the electrode pairs 34A (the bonding surfaces 34A 1). That is, this step is performed by a reflow step as an example. In this step, after flux is applied to the solder SP on each bonding surface 34A1, each light-emitting element 20 is bonded to each electrode pair 34A. Thus, in the case of the present embodiment in which the third step is performed before the fourth step, the flux functions to bond the solder SP to each light-emitting element 20. This step is an example of the bonding step.
The above is a description of the method for manufacturing the light-emitting substrate 10 of the present embodiment.
Light-emitting operation of light-emitting substrate in the present embodiment
Next, a light emitting operation of the light emitting substrate 10 of the present embodiment will be described with reference to fig. 4. Here, fig. 4 is a diagram for explaining a light emitting operation of the light emitting substrate 10 of the present embodiment.
First, when an operation switch (not shown) for operating the plurality of light emitting elements 20 is turned on, power supply from an external power supply (not shown) to the circuit pattern layer 34 via a connector (not shown) is started, and the plurality of light emitting elements 20 radially emit and scatter light L, a part of which reaches the surface 31 of the phosphor substrate 30. Hereinafter, the behavior of the light L will be described according to the traveling direction of the emitted light L.
A part of the light L emitted from each light emitting element 20 is emitted to the outside without being incident on the phosphor layer 36. In this case, the wavelength of the light L is kept the same as the wavelength of the light L emitted from each light emitting element 20.
Further, the light of the LED22 itself in a part of the light L emitted from each light emitting element 20 enters the phosphor layer 36. Here, the above-mentioned "light of the LED22 itself in a part of the light L" refers to light of each light-emitting element 20(CSP itself) in the emitted light L that is not color-converted by the phosphor (phosphor sealing layer 24), that is, light of the LED22 itself (blue light (having a wavelength of around 470nm, as an example)). When the light L of the LED22 itself collides with the phosphor dispersed in the phosphor layer 36, the phosphor is excited to generate excitation light. The reason why the phosphor is excited here is that the phosphor dispersed in the phosphor layer 36 uses a phosphor having an excitation peak in blue light (visible light excited phosphor). Accordingly, a part of the energy of the light L is used for excitation of the phosphor, and a part of the energy of the light L is consumed. As a result, the wavelength of the light L is converted (wavelength conversion is performed). For example, the wavelength of the light L is increased (for example, 650 nm) depending on the type of the phosphor layer 36 (for example, when a red CASN is used as the phosphor). The excitation light of the phosphor layer 36 is emitted from the phosphor layer 36 as it is, but a part of the excitation light is directed toward the lower circuit pattern layer 34. Then, a part of the excitation light is reflected by the circuit pattern layer 34 and emitted to the outside. As described above, in the case where the wavelength of the excitation light by the phosphor of the phosphor layer 36 is 600nm or more, even if the circuit pattern layer 34 is Cu, the reflection effect is desired. The wavelength of the light L differs from the above examples depending on the type of the phosphor layer 36, but the wavelength conversion of the light L is performed in any case. For example, when the wavelength of the excitation light is less than 600nm, if the circuit pattern layer 34 or the surface thereof is made of, for example, Ag (metal plating), a reflection effect is desired. Further, a white reflective layer may be provided below the phosphor layer 36 (on the insulating layer 32 side). The reflective layer is provided by a white paint such as a titanium oxide filler.
As described above, the light L emitted from each light emitting element 20 (the light L emitted radially from each light emitting element 20) is irradiated to the outside together with the excitation light via the plurality of optical paths described above. Therefore, when the emission wavelength of the phosphor contained in the phosphor layer 36 is different from the emission wavelength of the phosphor (phosphor sealing layer 24) sealing (or covering) the LED22 in the light emitting element 20(CSP), the light emitting substrate 10 of the present embodiment irradiates the light beam of the light L emitted from each light emitting element 20 together with the excitation light as a light beam of the light L including the light L having a wavelength different from the wavelength of the light L emitted from each light emitting element 20. For example, the light-emitting substrate 10 of the present embodiment irradiates the light beam of the light L emitted from each light-emitting element 20 with the excitation light as a light beam of the light L including the light L having a wavelength longer than the wavelength of the light L emitted from each light-emitting element 20.
On the other hand, when the emission wavelength of the phosphor contained in the phosphor layer 36 is the same as the emission wavelength of the phosphor (phosphor sealing layer 24) sealing (or covering) the LED22 in the light emitting element 20(CSP) (when the correlated color temperature is the same), the light emitting substrate 10 of the present embodiment irradiates the light beam of the light L emitted from each light emitting element 20 together with the excitation light as the light beam of the light L including the light L having the same wavelength as the wavelength of the light L emitted from each light emitting element 20.
The above is a description of the light emitting operation of the light emitting substrate 10 of the present embodiment.
Effect of the present embodiment
Next, effects of the present embodiment will be described with reference to the drawings.
< first Effect >
The first effect will be described by comparing the present embodiment with a comparative embodiment (see fig. 5) described below. Here, in the description of the comparative embodiment, when the same component or the like as that of the present embodiment is used, the same name, reference numeral, or the like as that of the present embodiment is used for the component or the like. Fig. 5 is a diagram for explaining a light emitting operation of the light emitting substrate 10A in the comparative embodiment. The light-emitting substrate 10A (the substrate 30A on which the plurality of light-emitting elements 20 are mounted) of the comparative embodiment has the same configuration as the light-emitting substrate 10 (the phosphor substrate 30) of the present embodiment, except that the phosphor layer 36 is not provided.
In the case of the light-emitting substrate 10A of the comparative form, the light L emitted from each light-emitting element 20 and incident on the surface 31 of the substrate 30A is reflected or scattered without being wavelength-converted. Therefore, in the case of the substrate 30A of the comparative embodiment, when the light emitting element 20 is mounted, it is not possible to adjust the light to the light of the emission color different from the light emitted by the light emitting element 20. That is, in the case of the light-emitting substrate 10A of the comparative embodiment, it is impossible to adjust the light to the light emission color different from the light emitted from the light-emitting element 20.
In contrast, in the present embodiment, the phosphor layer 36 is disposed on the surface 31 of the insulating layer 32 and around the bonding surfaces 34a1 of the light-emitting elements 20, as viewed in the thickness direction of the insulating layer 32. Therefore, part of the light L emitted in a hemispherical shape from each light emitting element 20 enters the phosphor layer 36, is wavelength-converted by the phosphor layer 36, and is emitted to the outside. In this case, part of the light L radially emitted from each light-emitting element 20 enters the phosphor layer 36, and the phosphor contained in the phosphor layer 36 is excited to generate excitation light.
Therefore, according to the phosphor substrate 30 of the present embodiment, when the light emitting element 20 is mounted, the light L emitted from the phosphor substrate 30 can be adjusted to a light of a different emission color from the light L emitted from the light emitting element 20. Accordingly, according to the light-emitting substrate 10 of the present embodiment, the light L emitted from the phosphor substrate 30 can be adjusted to the light L of the emission color different from the light L emitted from the light-emitting element 20.
When the emission wavelength of the phosphor contained in the phosphor layer 36 is the same as the emission wavelength of the phosphor (phosphor sealing layer 24) sealing (or covering) the LED22 in the light emitting element 20(CSP) (when the correlated color temperature is the same), the light emitting substrate 10 of the present embodiment irradiates the light beam of the light L emitted from each light emitting element 20 as the light beam of the light L including the light L having the same wavelength as the light L emitted from each light emitting element 20 together with the excitation light. In this case, the phosphor layer 36 also has an effect of reducing the chromaticity difference of the mounted light emitting element 20.
< second Effect >
In the case of the comparative embodiment, as shown in fig. 5, the light L emitted to the outside generates flare due to the arrangement interval of the light emitting elements 20. Here, the larger the spot of the light L, the larger the glare.
In contrast, in the case of the present embodiment, as shown in fig. 2B, the phosphor layer 36 is provided around the bonding surface 34a1 (over the entire circumference) and also between the adjacent light emitting elements 20, in addition to being surrounded by the phosphor layer 36. Therefore, excitation light is emitted from the periphery of each bonding surface 34a1 (the periphery of each light-emitting element 20).
Therefore, according to the present embodiment, glare can be reduced as compared with the comparative embodiment.
In particular, this effect is effective when the phosphor layer 36 is provided over the entire surface of the insulating layer 32, specifically, when the region of the surface 31 of the insulating layer 32 in which the phosphor layer 36 is disposed is 80% or more of the region of the surface 13.
As shown in fig. 1C, the phosphor layer 36 of the present embodiment has an opposing surface 36A corresponding to the adjacent light emitting element 20. Therefore, in the present embodiment, glare can be reduced as compared with a case where the light emitting element 20 is disposed on the phosphor layer 36 (not shown), for example.
< third Effect >
In the case of the present embodiment, for example, the phosphor contained in the phosphor layer 36 is a CASN phosphor containing Eu, and the phosphor layer 36 is provided on the wiring portion 34B made of Cu. Therefore, for example, when each light emitting element 20 emits white light L, the excitation light from the CASN phosphor included in the phosphor layer 36 is reflected by Cu constituting the lower electrode, for example, to improve the light emission efficiency (the structure of the present embodiment has a light reflection effect of Cu). In addition, in the present embodiment, the white light L can be adjusted to the warmer light L (the color whose correlated color temperature is shifted to the low temperature side) by this effect. In this case, warm light can be added to the white light of the light emitting element 20, and the value of the special color rendering index R9 can be increased. This effect is particularly effective for pseudo white using YAG-based white light (yellow phosphor).
< fourth Effect >
In the third step (see fig. 3C) of the present embodiment, the phosphor layer 36 is disposed by stacking the phosphor patterns 361, 362, and 363 having a thickness of 1/3 of the phosphor layer 36 three times, as an example.
Therefore, according to the present embodiment, the phosphor substrate 30 including the phosphor layer 36 having a multilayer structure can be manufactured. In addition, according to this embodiment, the film thickness of the phosphor layer 36 can be adjusted by adjusting the number of times the phosphor pattern 361 and the like are laminated in the third step.
< fifth Effect >
In the method for manufacturing the light-emitting substrate 10 of the present embodiment, the fourth step (phosphor layer disposing step) is performed after the third step (solder disposing step) (see fig. 3C to 3E). Here, the timing of disposing the solder SP may be considered, for example, in a fifth step (step of mounting the plurality of light emitting elements 20) after the fourth step.
However, as in the present embodiment, since the fourth step is performed after the third step, the solder SP can be easily disposed by printing. The grooves 34E formed on the surface of the circuit pattern layer 34 are effective in functioning as solder stoppers of the solder SP.
The above is a description of the effects of the present embodiment.
As described above, the present invention has been described by taking the above embodiments as examples, but the present invention is not limited to the above embodiments. The technical scope of the present invention includes, for example, the following aspects (modifications).
For example, in the description of the fourth step (see fig. 3D) of the present embodiment, the phosphor layer 36 is described as being formed by laminating the phosphor patterns 361, 362, 363 having a thickness of 1/3 of the phosphor layer 36 three times by, for example, transfer. However, the phosphor layer 36 may be formed by a method different from the present embodiment.
For example, as in a modification (first modification) shown in fig. 6A, in the fourth step, the phosphor layer 36 may be formed by discharging the liquid LQ containing the phosphor from the dispenser DP (an example of a discharge unit) so that the phosphor pattern having a thickness of 1/n (n ≧ 2) of the phosphor layer 36 is stacked n times while moving the dispenser DP relative to the insulating layer 32.
As in a modification (second modification) shown in fig. 6B, for example, in the fourth step, the phosphor layer 36 may be formed by causing the droplet discharge head IJH to discharge droplets DL containing a phosphor so that phosphor patterns having a thickness of 1/n (n ≧ 2) of the phosphor layer 36 are stacked n times while moving the droplet discharge head IJH (an example of a discharge portion) relative to the insulating layer 32.
In the fourth step, unlike the first and second modifications, the phosphor layer 36 may be formed by printing the phosphor pattern having a thickness of 1/n (n.gtoreq.2) n times so that the phosphor pattern having a thickness of 1/n (n.gtoreq.2) of the phosphor layer 36 is laminated n times. As a printing method in the case of this modification, for example, there is a method based on screen printing. However, if the phosphor layer 36 can be formed by printing the phosphor pattern n times, the specific printing method may not be the method based on screen printing.
In the method for manufacturing the light-emitting substrate 10 of the present embodiment, the fifth step (the step of bonding the light-emitting element 20) is performed after the fourth step (the step of disposing the phosphor layer). However, in the case where the phosphor layer disposing step is performed using the droplet discharge head IJH as in the second modification shown in fig. 6B, the fourth step may be performed after the fifth step as in the case of the modification (third modification) shown in fig. 6C. In this way, the second modification is effective in that the fourth step can be performed at any time before and after the fifth step. This point can also be said to be the case of the first modification.
Further, when the third step is performed using the dispenser DP of the first modification example of fig. 6A or the droplet discharge head IJH of the second modification example of fig. 6B, it can be said that it is effective in that the film thickness of the phosphor layer 36 can be locally adjusted, for example.
In the description of the present embodiment, an example of the light-emitting element 20 is a CSP. However, an example of the light-emitting element 20 may be other than the CSP. For example, only a flip chip may be mounted. In addition, the present invention can be applied to the substrate itself of the COB apparatus.
In the description of the present embodiment, a plurality of light-emitting elements 20 are mounted on the phosphor substrate 30, and the light-emitting substrate 10 includes a plurality of light-emitting elements 20. However, when the mechanism described in the first and fourth effects is considered, it is obvious that the first effect is exhibited even if there is only one light-emitting element 20. Therefore, the number of light-emitting elements 20 mounted on the phosphor substrate 30 may be at least one. At least one light-emitting element 20 mounted on the light-emitting substrate 10 may be used. Accordingly, at least one of the joint surface 34a1 and the non-joint surface 34B1 may be used.
In the description of the present embodiment, the rear surface pattern layer 38 is provided on the rear surface 33 of the phosphor substrate 30 (see fig. 1B). However, when the mechanism described in the first and fourth effects is considered, it is obvious that the first effect is exhibited even if the rear surface pattern layer 38 is not provided on the rear surface 33 of the phosphor substrate 30. Therefore, even if the embodiment is different from the phosphor substrate 30 and the light emitting substrate 10 of the present embodiment only in that the rear surface 33 does not have the rear surface pattern layer 38, the embodiment is considered to fall within the technical scope of the present invention.
In the description of the present embodiment, a plurality of light-emitting elements 20 are mounted on the phosphor substrate 30. However, considering the mechanism described in the fourth effect, an example of the electronic component may not be the light-emitting element 20.
In the description of the present embodiment, the phosphor substrate 30 as an example of the circuit substrate includes the phosphor layer 36. However, considering the mechanism described in the fourth effect, the phosphor layer 36 may not be provided on the circuit board in the case where the electronic component is not the light-emitting element 20.
In the description of the present embodiment, the phosphor layer 36 is disposed on the surface 31 of the insulating layer 32 and the circuit pattern layer 34 except for the electrode pairs 34A (see fig. 2B). However, when the mechanism of the explanation of the first and fourth effects is considered, it is obvious that the first and fourth effects are exhibited even if the phosphor substrate 30 is not disposed over the entire region of the portion other than the plurality of electrode pairs 34A on the surface 31. Therefore, even if the phosphor layer 36 is disposed only in the range of the surface 31 different from the case of the present embodiment, it can be said that the form is different from the form of the phosphor substrate 30 and the light emitting substrate 10 of the present embodiment, and the form falls within the technical scope of the present invention.
In the case of the present embodiment, a phosphor layer 36 is provided between the adjacent light emitting elements 20 (fig. 2B). The adhesive of the phosphor layer 36 has, for example, the same insulating property as the adhesive contained in the solder resist. I.e. the process is repeated. In the case of the present embodiment, the phosphor layer 36 functions as a solder resist.
In the description of the present embodiment, CS-3305A manufactured by Lichang industries, Ltd is used as the mother substrate MB in the production of the phosphor substrate 30 and the light-emitting substrate 10. However, this is only an example, and a different mother board MB may be used.
The light-emitting substrate 10 of the present embodiment (including its modified examples) can be combined with other components and applied to an illumination device. Other components in this case are a power supply for supplying power for causing the light emitting element 20 of the light emitting substrate 10 to emit light, and the like.
This application claims priority based on Japanese application laid-open at 21/2/2019 application No. 2019-029205, the disclosure of which is incorporated herein in its entirety.
Description of reference numerals
10 … light emitting substrate (an example of a mounting substrate)
20 … light-emitting element
30 … fluorescent substrate (an example of a circuit board)
31 … surface (an example of a surface)
32 … insulating layer (an example of an insulating substrate)
33 … back side
34 … Circuit Pattern layer
34A … electrode pair
34A1 … engagement surface
34B … wiring part
34B1 … non-engaging surface
34E … groove
36 … phosphor layer
36E … opposite side
38 … Back Pattern layer
DP … Dispenser (one example of a discharge section)
IJH … droplet discharge head (an example of a discharge portion)
L … light
MB … motherboard
SP … solder ball, solder.
Claims (20)
1. A phosphor substrate having at least one light emitting element mounted on one surface thereof, comprising:
an insulating substrate;
a circuit pattern layer which is disposed on one surface of the insulating substrate, has a plane surface facing the outer side in the thickness direction of the insulating substrate, and is joined as at least one joining surface for joining a part of the plane surface to the at least one electronic component; and
a phosphor layer disposed on at least one non-bonding surface that is a portion other than the at least one bonding surface in at least the plane, the phosphor layer including a phosphor having an emission peak wavelength in a visible light region when light emission of the at least one light-emitting element is excitation light,
the phosphor layer has a laminated structure.
2. The phosphor substrate of claim 1,
the at least one light emitting element is a plurality of light emitting elements,
the at least one engagement surface is a plurality of engagement surfaces,
the at least one non-engaging surface is a plurality of non-engaging surfaces,
the plurality of light emitting elements are arranged on one surface of the insulating substrate, and are mounted by being bonded to the plurality of bonding surfaces, respectively.
3. The phosphor substrate of claim 1,
the circuit pattern layer is formed with at least one groove that separates the at least one bonding surface from at least one non-bonding surface that is a portion other than the at least one bonding surface in the plane.
4. The phosphor substrate of claim 3,
the at least one light emitting element is a plurality of light emitting elements,
the at least one engagement surface is a plurality of engagement surfaces,
the at least one non-engaging surface is a plurality of non-engaging surfaces,
the at least one slot is a plurality of slots,
the plurality of light emitting elements are arranged on one surface of the insulating substrate, and are mounted by being bonded to the plurality of bonding surfaces, respectively.
5. A light-emitting substrate is provided with:
the phosphor substrate according to any one of claims 1 to 4; and
and at least one light emitting element bonded to the at least one bonding surface.
6. The light-emitting substrate according to claim 5,
the position in the thickness direction of the surface facing the outside in the thickness direction in the phosphor layer is located more inside in the thickness direction than the position of the surface facing the outside in the thickness direction in the at least one light emitting element.
7. The light-emitting substrate according to claim 5,
the position in the thickness direction of the surface facing the outside in the thickness direction of the phosphor layer is located at the center in the thickness direction of the at least one light emitting element or located inside in the thickness direction from the position.
8. An illumination device, comprising:
the light-emitting substrate according to any one of claims 5 to 7; and
and a power supply for supplying power for causing the light emitting element to emit light.
9. A method for manufacturing a phosphor substrate includes: a method for manufacturing an insulating substrate, a circuit pattern layer, and a phosphor substrate including a phosphor layer containing a phosphor in which an emission peak wavelength of light emitted from at least one light emitting element is in a visible light region when excited, the method comprising the steps of:
a pattern layer forming step of forming a wiring pattern layer on one surface of the insulating substrate; and
a phosphor layer forming step of forming the phosphor layer on a part of the wiring pattern layer,
in the phosphor layer forming step, a phosphor pattern thinner than the thickness of the phosphor layer is laminated to form the phosphor layer.
10. The method for manufacturing a phosphor substrate according to claim 9,
In the phosphor layer forming step, the phosphor layer is formed by laminating phosphor patterns having a thickness of 1/n (n.gtoreq.2) of the phosphor layer n times by transfer.
11. The method for manufacturing a phosphor substrate according to claim 9,
in the phosphor layer forming step, the liquid containing the phosphor is discharged from the discharge unit so that a phosphor pattern having a thickness of 1/n (n.gtoreq.2) of the phosphor layer is laminated n times while the discharge unit for discharging the liquid is moved relatively to the insulating substrate, thereby forming the phosphor layer.
12. The method for manufacturing a phosphor substrate according to claim 9, wherein
In the phosphor layer forming step, the discharge unit is caused to discharge the liquid containing the phosphor as droplets so as to form the phosphor layer while the discharge unit for discharging droplets is moved relatively to the insulating substrate and the phosphor pattern having a thickness of 1/n (n.gtoreq.2) of the phosphor layer is laminated n times.
13. The method for manufacturing a phosphor substrate according to claim 9,
in the phosphor layer forming step, the phosphor layer is formed by laminating phosphor patterns having a thickness of 1/n (n.gtoreq.2) of the phosphor layer n times by printing.
14. The method for manufacturing a phosphor substrate according to claim 13,
the printing is screen printing.
15. The method for producing a phosphor substrate according to any one of claims 9 to 14,
in the phosphor layer forming step, a phosphor pattern thinner than the thickness of the phosphor layer is laminated to form the phosphor layer having a thickness of not more than half the thickness of the phosphor layer.
16. The method for producing a phosphor substrate according to any one of claims 9 to 15, further comprising:
a groove forming step of forming at least one groove in a plane facing the outer side in the thickness direction of the insulating substrate in the circuit pattern layer, the groove forming step being performed after the pattern layer forming step and before the phosphor layer forming step; and
the method is characterized by comprising a step of disposing solder for bonding at least one light emitting element to one portion via the at least one groove in the plane, the step being performed before the step of forming the phosphor layer.
17. A method of fabricating a light emitting substrate, comprising:
the method for producing a phosphor substrate according to any one of claims 9 to 16; and
And a bonding step of bonding the at least one light-emitting element to a part of the circuit pattern layer.
18. A method of fabricating a light emitting substrate, comprising:
the method for producing a phosphor substrate according to claim 16; and
and a bonding step of bonding the at least one light emitting element to a part of the circuit pattern layer and another part of the circuit pattern layer with the at least one groove in the plane interposed therebetween.
19. The method of manufacturing a light-emitting substrate according to claim 17 or 18,
the bonding step is performed after the phosphor layer forming step.
20. The method of manufacturing a light-emitting substrate according to claim 18 or 19,
in the bonding step, after applying flux to the solder, the solder is melted to bond the at least one light emitting element to the other portion.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019029205 | 2019-02-21 | ||
| JP2019-029205 | 2019-02-21 | ||
| PCT/JP2020/005820 WO2020170970A1 (en) | 2019-02-21 | 2020-02-14 | Phosphor substrate, light-emitting substrate, illumination device, phosphor substrate manufacturing method, and light-emitting substrate manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN113491017A true CN113491017A (en) | 2021-10-08 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN202080015201.2A Pending CN113491017A (en) | 2019-02-21 | 2020-02-14 | Phosphor substrate, light-emitting substrate, method for producing phosphor substrate, method for producing light-emitting substrate, and lighting device |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP7449271B2 (en) |
| KR (1) | KR20210131338A (en) |
| CN (1) | CN113491017A (en) |
| TW (1) | TWI825278B (en) |
| WO (1) | WO2020170970A1 (en) |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| WO2024063045A1 (en) * | 2022-09-21 | 2024-03-28 | デンカ株式会社 | Method for manufacturing phosphor substrate, and method for manufacturing light emitting substrate |
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- 2020-02-14 CN CN202080015201.2A patent/CN113491017A/en active Pending
- 2020-02-14 WO PCT/JP2020/005820 patent/WO2020170970A1/en active Application Filing
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| Publication number | Publication date |
|---|---|
| WO2020170970A1 (en) | 2020-08-27 |
| KR20210131338A (en) | 2021-11-02 |
| JP7449271B2 (en) | 2024-03-13 |
| TWI825278B (en) | 2023-12-11 |
| TW202039791A (en) | 2020-11-01 |
| JPWO2020170970A1 (en) | 2021-12-16 |
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