CN113490983B - 用于nand闪速存储器的方法和装置 - Google Patents

用于nand闪速存储器的方法和装置 Download PDF

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Publication number
CN113490983B
CN113490983B CN202080009779.7A CN202080009779A CN113490983B CN 113490983 B CN113490983 B CN 113490983B CN 202080009779 A CN202080009779 A CN 202080009779A CN 113490983 B CN113490983 B CN 113490983B
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China
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bit line
data
cell
voltage
read
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CN202080009779.7A
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Chinese (zh)
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CN113490983A (zh
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许富菖
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Priority claimed from US16/687,556 external-priority patent/US11056190B2/en
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Priority to CN202211064837.3A priority Critical patent/CN115346585A/zh
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1057—Data output buffers, e.g. comprising level conversion circuits, circuits for adapting load
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5671—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge trapping in an insulator
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/24—Bit-line control circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3436—Arrangements for verifying correct programming or erasure
    • G11C16/3454—Arrangements for verifying correct programming or for detecting overprogrammed cells
    • G11C16/3459—Circuits or methods to verify correct programming of nonvolatile memory cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1051—Data output circuits, e.g. read-out amplifiers, data output buffers, data output registers, data output level conversion circuits
    • G11C7/1069—I/O lines read out arrangements
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/10—Input/output [I/O] data interface arrangements, e.g. I/O data control circuits, I/O data buffers
    • G11C7/1078—Data input circuits, e.g. write amplifiers, data input buffers, data input registers, data input level conversion circuits
    • G11C7/1084—Data input buffers, e.g. comprising level conversion circuits, circuits for adapting load
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/12—Bit line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, equalising circuits, for bit lines
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
CN202080009779.7A 2019-05-05 2020-04-15 用于nand闪速存储器的方法和装置 Active CN113490983B (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202211064837.3A CN115346585A (zh) 2019-05-05 2020-04-15 用于nand闪速存储器的方法和装置

Applications Claiming Priority (11)

Application Number Priority Date Filing Date Title
US201962843556P 2019-05-05 2019-05-05
US62/843,556 2019-05-05
US201962848567P 2019-05-15 2019-05-15
US62/848,567 2019-05-15
US201962871198P 2019-07-07 2019-07-07
US62/871,198 2019-07-07
US201962884139P 2019-08-07 2019-08-07
US62/884,139 2019-08-07
US16/687,556 US11056190B2 (en) 2018-11-18 2019-11-18 Methods and apparatus for NAND flash memory
US16/687,556 2019-11-18
PCT/US2020/028367 WO2020226866A1 (fr) 2019-05-05 2020-04-15 Procédés et appareil pour mémoire flash non-et

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CN113490983B true CN113490983B (zh) 2022-09-20

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CN202080009779.7A Active CN113490983B (zh) 2019-05-05 2020-04-15 用于nand闪速存储器的方法和装置

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WO (1) WO2020226866A1 (fr)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103021463A (zh) * 2011-09-26 2013-04-03 海力士半导体有限公司 非易失性存储器件、其编程方法、及数据处理系统
US8937833B2 (en) * 2012-01-30 2015-01-20 SK Hynix Inc. Semiconductor memory device including memory cells and a peripheral circuit and method of operating the same
US9218874B1 (en) * 2014-08-11 2015-12-22 Sandisk Technologies Inc. Multi-pulse programming cycle of non-volatile memory for enhanced de-trapping

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3983969B2 (ja) * 2000-03-08 2007-09-26 株式会社東芝 不揮発性半導体記憶装置
US8120959B2 (en) * 2008-05-30 2012-02-21 Aplus Flash Technology, Inc. NAND string based NAND/NOR flash memory cell, array, and memory device having parallel bit lines and source lines, having a programmable select gating transistor, and circuits and methods for operating same
US8355287B2 (en) * 2009-08-25 2013-01-15 Aplus Flash Technology, Inc. Method and apparatus for operation of a NAND-like dual charge retaining transistor NOR flash memory device
KR101415744B1 (ko) * 2013-02-20 2014-07-09 서울대학교산학협력단 스트링선택트랜지스터들의 문턱전압을 모니터링하는 ｓｓｌ 상태 확인 빌딩을 구비한 3차원 적층형 낸드 플래시 메모리 어레이, 그 모니터링 및 구동방법
US10242743B2 (en) * 2014-09-06 2019-03-26 NEO Semiconductor, Inc. Method and apparatus for writing nonvolatile memory using multiple-page programming

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103021463A (zh) * 2011-09-26 2013-04-03 海力士半导体有限公司 非易失性存储器件、其编程方法、及数据处理系统
US8937833B2 (en) * 2012-01-30 2015-01-20 SK Hynix Inc. Semiconductor memory device including memory cells and a peripheral circuit and method of operating the same
US9218874B1 (en) * 2014-08-11 2015-12-22 Sandisk Technologies Inc. Multi-pulse programming cycle of non-volatile memory for enhanced de-trapping

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CN113490983A (zh) 2021-10-08
WO2020226866A1 (fr) 2020-11-12
CN115346585A (zh) 2022-11-15

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